CN106249800A - Overheating protection circuit and there is the electronic installation of overheat protective function - Google Patents

Overheating protection circuit and there is the electronic installation of overheat protective function Download PDF

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Publication number
CN106249800A
CN106249800A CN201610842215.7A CN201610842215A CN106249800A CN 106249800 A CN106249800 A CN 106249800A CN 201610842215 A CN201610842215 A CN 201610842215A CN 106249800 A CN106249800 A CN 106249800A
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China
Prior art keywords
critesistor
resistance
protection circuit
temperature
overheating protection
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CN201610842215.7A
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CN106249800B (en
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游朝顺
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Qisda Suzhou Co Ltd
Qisda Corp
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Qisda Suzhou Co Ltd
Qisda Corp
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    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10Regulating voltage or current
    • G05F1/46Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Protection Of Static Devices (AREA)

Abstract

The present invention provides a kind of overheating protection circuit and has the electronic installation of overheat protective function; overheating protection circuit includes: the first critesistor, field effect transistor and the second critesistor; this first critesistor has negative temperature coefficient, and one end of this first critesistor connects power end;This field effect transistor includes source electrode, drain electrode and grid, and this source electrode connects this one end of this first critesistor, and this drain electrode linking objective end, this grid connects the other end of this first critesistor;This second critesistor has positive temperature coefficient, one end of this second critesistor connects this grid, the other end of this second critesistor is set, so that when this first critesistor and this second critesistor are heated and cause the first resistance reduction of this first critesistor, the second resistance of this second critesistor to raise, voltage between this grid and this source electrode reduces, and then is inputted the electric current of this destination end by this drain electrode and reduce thus slow down temperature-rise period.

Description

Overheating protection circuit and there is the electronic installation of overheat protective function
Technical field
The present invention relates to overtemperature protection field, particularly relate to a kind of overheating protection circuit and there is the electricity of overheat protective function Sub-device.
Background technology
At present, on circuit, function for temperature-compensating usually needs the integrated electricity utilizing critesistor with amplifier Road, or directly otherwise designed one integrated circuit controls voltage or electric current carries out temperature-compensating, and use both modes entering During trip temperature compensates, all can affect the circuit pressure drop on circuit, so, the component that is positioned on circuit can be changed Voltage and change the characteristic of component, and then the reliability of component is impacted with toleration.
Summary of the invention
It is an object of the invention to provide a kind of overheating protection circuit and there is the electronic installation of overheat protective function, to solve Certainly the problems referred to above.
In order to achieve the above object, first aspect, the present invention provides a kind of overheating protection circuit, including: the first temperature-sensitive electricity Resistance, field effect transistor and the second critesistor, this first critesistor has negative temperature coefficient, one end of this first critesistor Connect power end;This field effect transistor includes source electrode, drain electrode and grid, and this source electrode connects this one end of this first critesistor, This drain electrode linking objective end, this grid connects the other end of this first critesistor;This second critesistor has positive temperature system Number, one end of this second critesistor connects this grid, arranges the other end of this second critesistor, so that when this first heat Quick resistance and this second critesistor be heated and cause the first resistance of this first critesistor to reduce, this second critesistor When second resistance raises, voltage between this grid and this source electrode reduces, and then is inputted the electric current of this destination end by this drain electrode and subtract Little thus slow down temperature-rise period.
It is also preferred that the left this other end ground connection of this second critesistor.
It is also preferred that the left also comprise: voltage input end and transistor, this transistor has input, outfan and ground connection End, this input connects this voltage input end, this earth terminal ground connection, and this other end of this second critesistor connects this output End;When controlling this voltage input end and making this transistor turns, this outfan is equal with this earth terminal current potential;When this outfan Equal with this earth terminal current potential, this first critesistor and this second critesistor are heated and cause the of this first critesistor When one resistance reduces, the second resistance of this second critesistor raises, the voltage between this grid and this source electrode reduces, Jin Eryou This drain electrode inputs the electric current reduction of this destination end thus slows down temperature-rise period.
It is also preferred that the left also comprise: the 3rd critesistor, the 3rd critesistor has positive temperature coefficient, the 3rd temperature-sensitive electricity Resistance and this second critesistor serial or parallel connection are so that being in multiple temperature at the 3rd critesistor and this second critesistor During degree environment, the 3rd critesistor forms multiple resistance with this second critesistor, and then makes this overheating protection circuit foundation The difference of ambient temperature is automatically adjusted one of them in multiple electric currents that this current switching is the most corresponding with the plurality of resistance.
It is also preferred that the left also include: at least one the 4th critesistor, each 4th critesistor has positive temperature coefficient, should Each 4th critesistor for the 3rd critesistor and/or this second critesistor serial or parallel connection so that this This second heat when two critesistor, the 3rd critesistor and this at least one the 4th critesistor are in multiple temperature environment Quick resistance, the 3rd critesistor and this at least one the 4th critesistor form multiple resistance, and then make this overtemperature protection Circuit is automatically adjusted in multiple electric currents that this current switching is the most corresponding with the plurality of resistance wherein according to the difference of ambient temperature One of.
It is also preferred that the left this first critesistor, this second critesistor are arranged adjacent to this power end, when this power end is because of work Time overheated, this first critesistor is heated with this second critesistor, this first resistance of this first critesistor reduces, this This second resistance of two critesistor raises, and the voltage between this grid and this source electrode reduces, this drain electrode input this destination end Electric current reduce and then slow down the temperature-rise period of this power end.
It is also preferred that the left this first critesistor, this second critesistor are arranged adjacent to this field effect transistor, when this field effect transistor because of Work overheated or time short-circuit conditions occurs in this destination end, this first critesistor is heated with this second critesistor, this first heat This first resistance of quick resistance reduces, this second resistance of this second critesistor raises, the electricity between this grid and this source electrode Pressure reduces, this drain electrode the electric current inputting this destination end reduces and then slows down the temperature-rise period of this field effect transistor.
Second aspect, the present invention provides a kind of electronic installation with overheat protective function, including above-mentioned first aspect institute Overheating protection circuit, this power end and this destination end stated.
It is also preferred that the left this power end is the charging inlet of this electronic installation, this destination end is battery;Or, this power end is Battery or the interface of offer electric energy, this destination end is the interface for connecting other electronic equipment, thinks this other electronic equipment Charging.
It is also preferred that the left this destination end is for connecting the charging inlet of external electronic device.
Compared with prior art, overheating protection circuit that the present invention provides and there is the electronic installation of overheat protective function, When temperature raises, by there is the first critesistor of negative temperature coefficient and there is the second critesistor control of positive temperature coefficient System flows through the current reduction of field effect transistor, and then controls to flow into the current reduction of destination end, the first critesistor, the second temperature-sensitive electricity Resistance and field effect transistor are collectively forming has temperature controlled switch, and then reaches the function of overtemperature protection, will not change charging dress Put, the pressure drop of electric discharge device or power source supply end (i.e. for providing the power end of electric energy), merely with field effect transistor collocation heat The simple designs of quick resistance reaches monitor power end temperature and control electric current and then realize overheat protective function, it is to avoid to circuit The reliability of element impacts with toleration.
Accompanying drawing explanation
The schematic diagram of a kind of overheating protection circuit that Fig. 1 provides for the embodiment of the present invention;
The schematic diagram of the another kind of overheating protection circuit that Fig. 2 provides for the embodiment of the present invention;
The schematic diagram of another overheating protection circuit that Fig. 3 provides for the embodiment of the present invention.
Detailed description of the invention
For making the purpose of the present invention, structure, feature and function thereof are had further understanding, hereby coordinate embodiment detailed It is described as follows.
The schematic diagram of a kind of overheating protection circuit that Fig. 1 provides for the embodiment of the present invention.As it is shown in figure 1, overtemperature protection is electric Road includes: the first critesistor R29, field effect transistor Q5 and the second critesistor R30.First critesistor R29 has subzero temperature Degree coefficient, field effect transistor Q5 includes that source S, drain D and grid G, the second critesistor R30 have positive temperature coefficient.First One end 11 of critesistor R29 connects power end 100, and the other end 12 of the first critesistor R29 connects the grid of field effect transistor Q5 Pole G, the source S of field effect transistor Q5 connects one end 11 of the first critesistor R29, the drain D linking objective end of field effect transistor Q5 200, the grid G of field effect transistor Q5 is directly connected to one end 13 of the second critesistor R30, arranges the another of the second critesistor R30 One end 14, so that being heated as the first critesistor R29 and the second critesistor R30 and causing the of the first critesistor R29 When one resistance reduces, second resistance of the second critesistor R30 raises, the voltage Vgs between grid G and source S reduces, and then Reduced by the electric current Id of drain D input destination end 200 thus slow down temperature-rise period.When being embodied as, the first critesistor R29's Specification can select when temperature is 25 degrees Celsius (DEG C), and resistance value is the temperature-sensitive with negative temperature coefficient of 10 kilo-ohms (k Ω) Resistance, the specification of the second critesistor R30 can select when temperature is 25 DEG C, resistance value be 1k Ω there is positive temperature coefficient Critesistor.
The schematic diagram of the another kind of overheating protection circuit that Fig. 2 provides for the embodiment of the present invention.As in figure 2 it is shown, the second temperature-sensitive The other end 14 ground connection GND of resistance R30, is heated with the second critesistor R30 and causes first resistance of the first critesistor R29 When reduction, second resistance of the second critesistor R30 raise, the voltage Vgs between grid G and source S reduces, and then by draining The electric current Id of D input destination end 200 reduces thus slows down temperature-rise period.
The schematic diagram of another overheating protection circuit that Fig. 3 provides for the embodiment of the present invention.As it is shown on figure 3, overtemperature protection Circuit also comprises: voltage input end EN2 and transistor Q6, transistor Q6 have input I, outfan O and earth terminal G, Input I connects voltage input end EN2, earth terminal G ground connection GND, and transistor Q6 is specifically as follows transistor, wherein, Input I is base stage, and outfan O is colelctor electrode, and earth terminal G is emitter stage;The other end 14 of the second critesistor R30 connects defeated Go out to hold O.When control voltage input end EN2 be high potential transistor Q6 is turned on time, outfan O and earth terminal G current potential phase Deng;When outfan O is equal with earth terminal G current potential, the first critesistor R29 and the second critesistor R30 is heated and causes first When first resistance of critesistor R29 reduces, second resistance of the second critesistor R30 raises, between grid G and source S Voltage Vgs reduce, and then by drain D input destination end 200 electric current Id reduce thus slow down temperature-rise period.
For the overheating protection circuit described in above-described embodiment, exemplary, the second critesistor R30 is when more than 80 DEG C Resistance value can increase by 500, and (the former resistance of the i.e. second critesistor R30 is 1k Ω, then the resistance of the second critesistor R30 when 80 DEG C Value can become 5k Ω), so, the grid G voltage of field effect transistor Q5 can rise and reach to limit the effect of electric current Id, when temperature is held Continuous when rising to 120 DEG C, the resistance of the first critesistor R29 can reduce to 1/10, and (the former resistance of the i.e. first critesistor R29 is 10k Ω, when 120 DEG C, the resistance of the first critesistor R29 becomes 1k Ω), so, the electricity flowing through field effect transistor Q5 can be limited Stream Id, reaches the function of overtemperature protection.
For the overheating protection circuit described in above-described embodiment, due to the first critesistor R29 and the second critesistor R30 Different temperature characterisitics, along with the lasting change of temperature, the first critesistor R29 and the second critesistor R30 present different Resistance value so that electric current Id can be switched according to the different of resistance value of the first critesistor R29 and the second critesistor R30 To different gears.
It is also preferred that the left for the overheating protection circuit shown in above-mentioned Fig. 1 to Fig. 3, it is also possible to comprise: the 3rd critesistor, the Three critesistor have positive temperature coefficient, and the 3rd critesistor and the second critesistor R30 serial or parallel connection are so that the 3rd When critesistor and the second critesistor R30 are in multiple temperature environment, the 3rd critesistor and the second critesistor R30 are formed Multiple resistances, and then make overheating protection circuit be automatically adjusted electric current Id according to the difference of ambient temperature to switch to and multiple resistances One of them in corresponding multiple electric currents.Further, overheating protection circuit can also include: at least one the 4th temperature-sensitive electricity Resistance, each 4th critesistor has positive temperature coefficient, and each 4th critesistor is used for and the 3rd critesistor and/or second Critesistor R30 serial or parallel connection is so that in the second critesistor R30, the 3rd critesistor and at least one the 4th temperature-sensitive When resistance is in multiple temperature environment, the second critesistor R30, the 3rd critesistor are formed with at least one the 4th critesistor Multiple resistances, and then make overheating protection circuit be automatically adjusted electric current Id according to the difference of ambient temperature to switch to and multiple resistances One of them in corresponding multiple electric currents.
It is also preferred that the left the first critesistor R29, the second critesistor R30 are arranged adjacent to power end 100, when power end 100 because of When working overheated, owing to the first critesistor R29, the second critesistor R30 are arranged adjacent to power end 100, the first critesistor R29 and the second critesistor R30 be heated first resistance of the first critesistor R29 can be made to reduce, the second critesistor R30 Second resistance raises, and then the voltage Vgs between grid G and source S is reduced, by the electric current of drain D input destination end 200 Reduce Id and then slow down the temperature-rise period of power end 100, and then protection power end 100.Further, if in overheating protection circuit also Including other critesistor (such as, the 3rd critesistor, the 4th critesistor), other critesistor also are adjacent to power end 100 Arrange.Owing to different critesistor has different temperature characterisitics, utilize the difference between different critesistor, then with series connection or Mode in parallel connects, and can arrange and allow overheating protection circuit reach the resistance to be regulated;Exemplary, the 3rd critesistor Being parallel to the second critesistor R30, when temperature is 100 DEG C (first grade), the second critesistor R30, the 3rd critesistor are all For A Ω, when temperature is 200 DEG C (second gear), the second critesistor R30 is B Ω (B is more than A), the 3rd critesistor is A Ω, When temperature is 300 DEG C (third gear), the second critesistor R30, the 3rd critesistor are all B Ω (B be more than A), so, and can temperature The difference of resistance value that the difference of degree is caused and switch electric current Id to the most different gears, therefore, in reality is applied, Ke Yigen According to actual demand, at least one in the second critesistor, the 3rd critesistor, the 4th critesistor is set to the electric current needed Gear.
It is also preferred that the left the first critesistor R29, the second critesistor R30 are arranged adjacent to field effect transistor Q5, when field effect transistor Q5 Because work is overheated or time destination end 200 occurs that short-circuit conditions causes field effect transistor Q5 overheated, due to the first critesistor R29, Second critesistor R30 is arranged adjacent to field effect transistor Q5, and the first critesistor R29 and the second critesistor R30 is heated and can make First resistance of the first critesistor R29 reduces, second resistance of the second critesistor R30 raises, and then makes grid G and source Voltage Vgs between the S of pole reduces, and is reduced by the electric current Id of drain D input destination end 200 and then is slowed down the intensification of field effect transistor Q5 Process, and then protect power end and destination end.Further, if overheating protection circuit also includes other critesistor (such as, Three critesistor, the 4th critesistor), other critesistor also are adjacent to field effect transistor Q5 and arrange.
Have the electronic installation of overheat protective function can include the overheating protection circuit described in any of the above-described embodiment, on State power end 100 and above-mentioned destination end 200.In reality is applied, electronic installation is used for receiving electric energy, and (i.e. electronic installation is for filling Electric installation), exemplary, electronic installation is the mobile terminal such as mobile phone, panel computer, and power end 100 can be electronic installation Charging inlet, destination end 200 can be battery, and electronic installation can be played by overheating protection circuit when charge electronic devices Heat protective effect;Another kind of situation, electronic installation is for charging (i.e. electronic installation is electric discharge device) for other electronic equipment, electric Source 100 is battery or the interface of offer electric energy, and destination end 200 is the interface for connecting other electronic equipment, exemplary, Electronic installation is charger baby.In reality is applied, power end 100 can be for connecting the plug of power supply, interface, destination end 200 can be that the charging inlet for connecting external electronic device, i.e. electronic installation charge for external electronic equipments, overheated Protection circuit can when external electronic equipments charges external electronic equipments and comprise overheating protection circuit electronics dress Put and play superheat protecting function.
Overheating protection circuit that the embodiment of the present invention provides and have the electronic installation of overheat protective function, raises in temperature Time, control to flow through field effect with second critesistor with positive temperature coefficient by having the first critesistor of negative temperature coefficient Should the current reduction of pipe, and then control to flow into the current reduction of destination end, the first critesistor, the second critesistor and field effect Pipe is collectively forming has temperature controlled switch, and then reaches the function of overtemperature protection, will not change charging device, electric discharge device Or the pressure drop of power source supply end (i.e. for providing the power end of electric energy), merely simple with field effect transistor collocation critesistor Design reaches monitor power end temperature and control electric current and then realize overheat protective function, it is to avoid the reliability to component Impact with toleration.
The present invention is been described by by above-mentioned related embodiment, but above-described embodiment is only the example implementing the present invention. It must be noted that, the embodiment disclosed is not limiting as the scope of the present invention.On the contrary, without departing from the present invention spirit and In the range of the change made and retouching, all belong to the scope of patent protection of the present invention.

Claims (10)

1. an overheating protection circuit, it is characterised in that including:
First critesistor, has negative temperature coefficient, and one end of this first critesistor connects power end;
Field effect transistor, including source electrode, drain electrode and grid, this source electrode connects this one end of this first critesistor, and this drain electrode is even Connecing destination end, this grid connects the other end of this first critesistor;
Second critesistor, has positive temperature coefficient, and one end of this second critesistor connects this grid, arranges this second temperature-sensitive The other end of resistance, so that when this first critesistor and this second critesistor are heated and cause this first critesistor When first resistance reduces, the second resistance of this second critesistor raises, the voltage between this grid and this source electrode reduces, and then Inputted the electric current reduction of this destination end by this drain electrode thus slow down temperature-rise period.
2. overheating protection circuit as claimed in claim 1, it is characterised in that this other end ground connection of this second critesistor.
3. overheating protection circuit as claimed in claim 1, it is characterised in that also comprise:
Voltage input end;
Transistor, this transistor has input, outfan and earth terminal, and this input connects this voltage input end, and this connects Ground end ground connection, this other end of this second critesistor connects this outfan;
When controlling this voltage input end and making this transistor turns, this outfan is equal with this earth terminal current potential;When this output Holding equal with this earth terminal current potential, this first critesistor and this second critesistor are heated and cause this first critesistor When first resistance reduces, the second resistance of this second critesistor raises, the voltage between this grid and this source electrode reduces, and then Inputted the electric current reduction of this destination end by this drain electrode thus slow down temperature-rise period.
4. overheating protection circuit as claimed in claim 1, it is characterised in that also comprise: the 3rd critesistor, the 3rd temperature-sensitive Resistance has positive temperature coefficient, and the 3rd critesistor and this second critesistor serial or parallel connection are so that in the 3rd temperature-sensitive When resistance is in multiple temperature environment with this second critesistor, the 3rd critesistor is formed multiple with this second critesistor Resistance, so make this overheating protection circuit according to the difference of ambient temperature be automatically adjusted this current switching to the plurality of resistance One of them in corresponding multiple electric currents.
5. overheating protection circuit as claimed in claim 4, it is characterised in that also include: at least one the 4th critesistor, often Individual 4th critesistor has positive temperature coefficient, this each 4th critesistor for the 3rd critesistor and/or this Two critesistor serial or parallel connections are so that in this second critesistor, the 3rd critesistor and this at least one the 4th warm This second critesistor, the 3rd critesistor and this at least one the 4th critesistor when quick resistance is in multiple temperature environment Form multiple resistance, so make this overheating protection circuit according to the difference of ambient temperature be automatically adjusted this current switching to this One of them in multiple electric currents that multiple resistances are corresponding.
6. overheating protection circuit as claimed in claim 1, it is characterised in that this first critesistor, this second critesistor This power end neighbouring is arranged, and when this power end is because working overheated, this first critesistor is heated with this second critesistor, should This first resistance of first critesistor reduces, this second resistance of this second critesistor raises, this grid and this source electrode it Between voltage reduce, this drain electrode the electric current inputting this destination end reduces and then slows down the temperature-rise period of this power end.
7. overheating protection circuit as claimed in claim 1, it is characterised in that this first critesistor, this second critesistor This field effect transistor neighbouring is arranged, when this field effect transistor is because of when work is overheated or short-circuit conditions occurs in this destination end, and this first temperature-sensitive Resistance is heated with this second critesistor, this first resistance of this first critesistor reduces, this second critesistor this Two resistances raise, and the voltage between this grid and this source electrode reduces, this drain electrode the electric current inputting this destination end reduces and then subtracts The temperature-rise period of this field effect transistor slow.
8. an electronic installation with overheat protective function, it is characterised in that include as described in any one of claim 1-7 Overheating protection circuit, this power end and this destination end.
9. electronic installation as claimed in claim 8, it is characterised in that this power end is the charging inlet of this electronic installation, should Destination end is battery;Or, this power end is battery or the interface providing electric energy, and this destination end sets for being used for connecting other electronics Standby interface, thinks that this other electronic equipment charges.
10. electronic installation as claimed in claim 8, it is characterised in that this destination end is for connecting filling of external electronic device Electrical interface.
CN201610842215.7A 2016-09-22 2016-09-22 Overheating protection circuit and the electronic installation with overheat protective function Active CN106249800B (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106598105A (en) * 2016-12-22 2017-04-26 上海与德信息技术有限公司 Temperature control circuit and temperature control method based on mobile terminal
CN108733102A (en) * 2017-04-25 2018-11-02 佛山市顺德区美的电热电器制造有限公司 Heating household electrical appliance temperature sensing circuit, protection system and household electrical appliance
EP3934040A1 (en) * 2020-06-30 2022-01-05 Littelfuse, Inc. Depletion mode mosfet for overcurrent protection
CN114879802A (en) * 2022-06-23 2022-08-09 广东美的白色家电技术创新中心有限公司 Current regulating device, method, device, equipment and medium
CN114967815A (en) * 2022-06-23 2022-08-30 广东美的白色家电技术创新中心有限公司 Voltage regulation device, method, device, equipment and medium

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010028197A1 (en) * 2000-03-31 2001-10-11 Autonetworks Technologies, Ltd. Electric junction box for vehicle
US20040042142A1 (en) * 2002-08-29 2004-03-04 Murata Manufacturing Co., Ltd. Overheat protection circuit
CN1812097A (en) * 2005-01-27 2006-08-02 杨越培 Semiconductor device
CN101588056A (en) * 2009-03-11 2009-11-25 中国电子科技集团公司第二十四研究所 A kind of overheating protection circuit
CN103036203A (en) * 2011-10-10 2013-04-10 鸿富锦精密工业(深圳)有限公司 Protection circuit
CN104655310A (en) * 2013-11-25 2015-05-27 联合汽车电子有限公司 Temperature detection circuit and implementation method thereof
CN204720962U (en) * 2015-07-08 2015-10-21 英飞特电子(杭州)股份有限公司 A kind of thermal-shutdown circuit

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010028197A1 (en) * 2000-03-31 2001-10-11 Autonetworks Technologies, Ltd. Electric junction box for vehicle
US20040042142A1 (en) * 2002-08-29 2004-03-04 Murata Manufacturing Co., Ltd. Overheat protection circuit
CN1812097A (en) * 2005-01-27 2006-08-02 杨越培 Semiconductor device
CN101588056A (en) * 2009-03-11 2009-11-25 中国电子科技集团公司第二十四研究所 A kind of overheating protection circuit
CN103036203A (en) * 2011-10-10 2013-04-10 鸿富锦精密工业(深圳)有限公司 Protection circuit
CN104655310A (en) * 2013-11-25 2015-05-27 联合汽车电子有限公司 Temperature detection circuit and implementation method thereof
CN204720962U (en) * 2015-07-08 2015-10-21 英飞特电子(杭州)股份有限公司 A kind of thermal-shutdown circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106598105A (en) * 2016-12-22 2017-04-26 上海与德信息技术有限公司 Temperature control circuit and temperature control method based on mobile terminal
CN108733102A (en) * 2017-04-25 2018-11-02 佛山市顺德区美的电热电器制造有限公司 Heating household electrical appliance temperature sensing circuit, protection system and household electrical appliance
EP3934040A1 (en) * 2020-06-30 2022-01-05 Littelfuse, Inc. Depletion mode mosfet for overcurrent protection
US11374393B2 (en) 2020-06-30 2022-06-28 Littelfuse, Inc. Depletion mode MOSFET for overcurrent protection
CN114879802A (en) * 2022-06-23 2022-08-09 广东美的白色家电技术创新中心有限公司 Current regulating device, method, device, equipment and medium
CN114967815A (en) * 2022-06-23 2022-08-30 广东美的白色家电技术创新中心有限公司 Voltage regulation device, method, device, equipment and medium

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