CN105867511B - A kind of Segmented temperature compensation circuit - Google Patents
A kind of Segmented temperature compensation circuit Download PDFInfo
- Publication number
- CN105867511B CN105867511B CN201610494424.7A CN201610494424A CN105867511B CN 105867511 B CN105867511 B CN 105867511B CN 201610494424 A CN201610494424 A CN 201610494424A CN 105867511 B CN105867511 B CN 105867511B
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- resistance
- pmos
- nmos tube
- audion
- drain electrode
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention belongs to electronic circuit technology, particularly relates to a kind of Segmented temperature compensation circuit.The circuit of the present invention includes constant flow module, excess temperature trigger module and positive temperature coefficient current source module；Wherein, constant flow module makes the current constant for flowing through load；Excess temperature trigger module connects positive temperature coefficient current source module, controls which and opens and size of current；The inverting input end of the output termination constant flow module of current source module, makees compensation electric current.Beneficial effects of the present invention are：Chip input supply voltage is raised, and chip temperature increases, and chip will not be immediately turned off, but by the voltage on linear reduction resistance Rs, is reduced current value, and then reduced chip power-consumption and temperature；And subject range of the chip to temperature is further improved using different temperatures coefficient in the range of different temperatures, preferably protect load and device.
Description
Technical field
The invention belongs to electronic circuit technology, particularly relates to a kind of Segmented temperature compensation circuit.
Background technology
Generally for preventing chip from failing because of heating burnout, all can possess temperature compensation function mostly, once exceed
By by way of linear reduction operating current during design temperature, which is maintained to work on and reduce temperature.Existing temperature is mended
Mostly full temperature compensation being repaid, i.e., same penalty coefficient being adopted in whole temperature range, this causes applied environment to be limited, it is impossible to full
The requirement of some special applications sufficient.
Therefore, for the circuit of constant-current driving, circuit can be adjusted well with Segmented temperature compensation circuit
Power consumption and protection drive circuit, can apply in a variety of contexts.
Content of the invention
The purpose of the present invention, exactly proposes a kind of Segmented temperature compensation circuit.
Technical solution of the present invention：A kind of Segmented temperature compensation circuit, including constant flow module, excess temperature trigger module and positive temperature system
Number current source module；
The constant flow module is made up of error amplifier EA, the first NMOS tube NM1, resistance Rs and RF；Wherein, error is amplified
The input termination reference potential Vref in the same direction of device EA, reverse input end connect the source electrode of the first NMOS tube NM1 through resistance RF, and error is put
The grid level of output first NMOS tube NM1 of termination of big device EA；The source electrode of the first NMOS tube NM1 is grounded by resistance Rs, and first
The drain electrode of NMOS tube NM1 connects load；
The excess temperature trigger module is by 3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th electricity
Resistance R7, the 8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 3rd audion Q3, the 4th audion Q4, the 5th PMOS
PM5 and the 6th PMOS PM6 are constituted；Wherein, the base stage of the 3rd audion Q3 is followed by power supply by 3rd resistor R3, the three or three pole
The base stage of pipe Q3 is grounded after the 4th resistance R4, and the colelctor electrode of the 3rd audion Q3 is followed by power supply by the 5th resistance R5, the
The grounded emitter of three audion Q3；The source electrode of the 5th PMOS PM5 connects power supply, and its grid is followed by electricity by the 5th resistance R5
Source, the drain electrode of the 5th PMOS PM5 are grounded after the 9th resistance R9；The drain electrode of 5th PMOS PM5 and the company of the 9th resistance R9
Contact connects the first enable signal；The base stage of the 4th audion Q4 is followed by power supply, the base of the 4th audion Q4 by the 6th resistance R6
Pole is grounded after the 7th resistance R7, and the colelctor electrode of the 4th audion Q4 is followed by power supply by the 8th resistance R8, the 4th audion
The grounded emitter of Q4；The source electrode of the 6th PMOS PM6 connects power supply, and its grid is followed by power supply by the 8th resistance R8, and the 6th
The drain electrode of PMOS PM6 is grounded after the tenth resistance R10；The junction point of the drain electrode of the 6th PMOS PM6 and the tenth resistance R10 connects
Second enables signal；
The positive temperature coefficient current source module by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3,
Four PMOSs PM4, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube NM4, the first audion Q1, the second audion
Q2, first resistor R1 and second resistance R2 are constituted；Wherein, the source electrode of the first PMOS PM1 connects power supply, and its grid meets the 4th PMOS
The drain electrode of pipe PM4；The source electrode of the second PMOS PM2 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；3rd PMOS
The source electrode of PM3 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；The source electrode of the 4th PMOS PM4 connects power supply, its grid
Connect the first enable signal；The drain electrode of the second NMOS tube NM2 connects the drain electrode of the first PMOS PM1, the grid of the second NMOS tube NM2 and
Drain interconnection；The emitter stage of the first audion Q1 connects the source electrode of the second NMOS tube NM2, the base stage of the first audion Q1 and colelctor electrode
Ground connection；The drain electrode of the 3rd NMOS tube NM3 connects the drain electrode of the second PMOS PM2, and the grid of the 3rd NMOS tube NM3 connects the first PMOS
The drain electrode of PM1；The drain electrode of the 4th NMOS tube NM4 is followed by the source electrode of the 3rd NMOS tube NM3, the 4th NMOS tube by first resistor R1
The grid of NM4 connects the second enable signal, and the drain electrode of the 4th NMOS tube NM4 is followed by its source electrode by second resistance R2；Two or three pole
The emitter stage of pipe Q2 connects the source electrode of the 4th NMOS tube NM4,；The base stage and grounded collector of the second audion Q2；3rd PMOS
Outfan of the drain electrode of PM3 for positive temperature coefficient current source module.
Beneficial effects of the present invention are：Chip input supply voltage is raised, and chip temperature increases, and chip will not be closed immediately
Disconnected, but by the voltage on linear reduction resistance Rs, reduce current value, and then reduce chip power-consumption and temperature；And not
Using different temperatures coefficient in synthermal scope, subject range of the chip to temperature is further improved, is preferably protected
Load and device.
Description of the drawings
It is a kind of Segmented temperature compensation circuit of the present invention shown in Fig. 1；
It is excess temperature trigger module shown in Fig. 2；
It is positive temperature coefficient current source shown in Fig. 3；
It is a kind of Segmented temperature compensation circuit integrated circuit figure shown in Fig. 4；
It is that a kind of Segmented temperature compensation circuit output current varies with temperature curve synoptic diagram shown in Fig. 5.
Specific embodiment
With reference to the accompanying drawings and examples, technical scheme is described in detail：
As shown in figure 1, for the present invention a kind of Segmented temperature compensation circuit, including constant flow module, excess temperature trigger module and
Positive temperature coefficient current source module；Wherein, constant flow module makes the current constant for flowing through load；Excess temperature trigger module connects positive temperature coefficient
Current source module, controls which and opens and size of current；The inverting input end of the output termination constant flow module of current source module, makees
Compensation electric current；
The constant flow module is made up of error amplifier EA, driving tube NM1, resistance Rs and RF；Wherein, error amplifier EA
Input in the same direction termination reference potential Vref, reverse input end connects the source electrode of driving tube NM1, output termination driving tube through resistance RF
Grid level；The source electrode of driving tube NM1 is connected to ground GND by resistance Rs, and drain electrode connects load.
Embodiment
As shown in Fig. 2 the middle temperature trigger module of this example is by 3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance
R6, the 7th resistance R7, the 8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 3rd audion Q3, the 4th audion Q4,
Five PMOSs PM5 and the 6th PMOS PM6 are constituted；Wherein, the base stage of the 3rd audion Q3 is followed by power supply by 3rd resistor R3,
The base stage of the 3rd audion Q3 is grounded after the 4th resistance R4, and the colelctor electrode of the 3rd audion Q3 is followed by by the 5th resistance R5
Power supply, the grounded emitter of the 3rd audion Q3；The source electrode of the 5th PMOS PM5 connects power supply, and its grid passes through the 5th resistance R5
Power supply is followed by, the drain electrode of the 5th PMOS PM5 is grounded after the 9th resistance R9；The drain electrode of 5th PMOS PM5 and the 9th resistance
The junction point of R9 connects the first enable signal；The base stage of the 4th audion Q4 is followed by power supply by the 6th resistance R6, the 4th audion
The base stage of Q4 is grounded after the 7th resistance R7, and the colelctor electrode of the 4th audion Q4 is followed by power supply by the 8th resistance R8, and the 4th
The grounded emitter of audion Q4；The source electrode of the 6th PMOS PM6 connects power supply, and its grid is followed by power supply by the 8th resistance R8,
The drain electrode of the 6th PMOS PM6 is grounded after the tenth resistance R10；The drain electrode of 6th PMOS PM6 and the connection of the tenth resistance R10
Point connects the second enable signal；
In this example positive temperature coefficient current source module by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3,
4th PMOS PM4, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube NM4, the first audion Q1, the two or three pole
Pipe Q2, first resistor R1 and second resistance R2 are constituted；Wherein, the source electrode of the first PMOS PM1 connects power supply, and its grid connects the 4th
The drain electrode of PMOS PM4；The source electrode of the second PMOS PM2 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；3rd
The source electrode of PMOS PM3 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；The source electrode of the 4th PMOS PM4 connects power supply,
Its grid connects the first enable signal；The drain electrode of the second NMOS tube NM2 connects the drain electrode of the first PMOS PM1, the second NMOS tube NM2
Grid and drain interconnection；The emitter stage of the first audion Q1 connects the source electrode of the second NMOS tube NM2, the base stage of the first audion Q1 and
Grounded collector；The drain electrode of the 3rd NMOS tube NM3 connects the drain electrode of the second PMOS PM2, and the grid of the 3rd NMOS tube NM3 connects first
The drain electrode of PMOS PM1；The drain electrode of the 4th NMOS tube NM4 is followed by the source electrode of the 3rd NMOS tube NM3 by first resistor R1, and the 4th
The grid of NMOS tube NM4 connects the second enable signal, and the drain electrode of the 4th NMOS tube NM4 is followed by its source electrode by second resistance R2；The
The emitter stage of two audion Q2 connects the source electrode of the 4th NMOS tube NM4,；The base stage and grounded collector of the second audion Q2；3rd
Outfan of the drain electrode of PMOS PM3 for positive temperature coefficient current source module.
The operation principle of this example is：
When chip temperature is less than T1 within normal range, now in excess temperature trigger module, Q3 is off state, PM5 grid
Extremely high and turn off, it is low level that output first enables signal EN1, and current source module PM4 is opened, and PM1, PM2 and PM3 are closed
Disconnected, output current is zero.It is Vref that electric current on RF is voltage on zero, Rs, and size of current isChip is normal
Work, electric current is setting value.
When temperature increases above T1, in excess temperature trigger module, the base emitter voltage of Q3 is less than the electricity on R4
Press, now Q3 conductings, PM5 grid voltages are low, and PM5 is turned on, EN1 voltages are VDD, and PM4 shut-offs, positive temperature coefficient current module are opened
Beginning work.Before temperature does not rise to T2, Q4 is off, PM6 grids be eminence in off state, EN2 exports low electricity
Position, NM4 turn off, in R2 resistance access circuits.The output of current sourceThen the voltage on Rs is Vs=
Vref-Iout*RF, output current isBecause Δ Vbe is positive temperature coefficient, then may be used
Declined with temperature linearity with obtaining output current I.
When temperature increases above T2, in the middle of excess temperature trigger module, the base-emitter voltage of Q4 is decreased below R7
On voltage, Q4 turns on, and PM6 grid voltages are low and turn on, and it is high level that output second enables signal EN2.EN2 is caused for high
NM4 is turned on, and R2 is shorted.Now current source outputThen the voltage on Rs is
Output currentWith bigger before the relative T2 of temperature coefficient, that is, meet higher in temperature
When electric current decline speed faster.
When temperature rises to T3, safety range is reached, now current reduction is zero, turned off chip module, load
Quit work.
Claims (1)
1. a kind of Segmented temperature compensation circuit, including constant flow module, excess temperature trigger module and positive temperature coefficient current source module；
The constant flow module is made up of error amplifier EA, the first NMOS tube NM1, the 11st resistance Rs and the 12nd resistance RF；
Wherein, the input termination reference potential Vref in the same direction of error amplifier EA, reverse input end connect first through the 12nd resistance RF
The source electrode of NMOS tube NM1, the grid level of output first NMOS tube NM1 of termination of error amplifier EA；The source electrode of the first NMOS tube NM1
It is grounded by the 11st resistance Rs, the drain electrode of the first NMOS tube NM1 connects load；
The excess temperature trigger module by 3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7,
8th resistance R8, the 9th resistance R9, the tenth resistance R10, the 3rd audion Q3, the 4th audion Q4, the 5th PMOS PM5 and
Six PMOSs PM6 are constituted；Wherein, the base stage of the 3rd audion Q3 is followed by power supply by 3rd resistor R3, the 3rd audion Q3's
Base stage is grounded after the 4th resistance R4, and the colelctor electrode of the 3rd audion Q3 is followed by power supply by the 5th resistance R5, the three or three pole
The grounded emitter of pipe Q3；The source electrode of the 5th PMOS PM5 connects power supply, and its grid is followed by power supply by the 5th resistance R5, and the 5th
The drain electrode of PMOS PM5 is grounded after the 9th resistance R9；The junction point of the drain electrode of the 5th PMOS PM5 and the 9th resistance R9 is exported
First enables signal；The base stage of the 4th audion Q4 is followed by power supply by the 6th resistance R6, and the base stage of the 4th audion Q4 passes through
It is grounded after 7th resistance R7, the colelctor electrode of the 4th audion Q4 is followed by power supply by the 8th resistance R8, and the 4th audion Q4 sends out
Emitter grounding；The source electrode of the 6th PMOS PM6 connects power supply, and its grid is followed by power supply by the 8th resistance R8, the 6th PMOS PM6
Drain electrode be grounded after the tenth resistance R10；The junction point output second of the drain electrode of the 6th PMOS PM6 and the tenth resistance R10 makes
Can signal；
The positive temperature coefficient current source module by the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3, the 4th
PMOS PM4, the second NMOS tube NM2, the 3rd NMOS tube NM3, the 4th NMOS tube NM4, the first audion Q1, the second audion
Q2, first resistor R1 and second resistance R2 are constituted；Wherein, the source electrode of the first PMOS PM1 connects power supply, and its grid meets the 4th PMOS
The drain electrode of pipe PM4；The source electrode of the second PMOS PM2 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；3rd PMOS
The source electrode of PM3 connects power supply, and its grid connects the drain electrode of the 4th PMOS PM4；The source electrode of the 4th PMOS PM4 connects power supply, its grid
Connect the first enable signal；The drain electrode of the second NMOS tube NM2 connects the drain electrode of the first PMOS PM1, the grid of the second NMOS tube NM2 and
Drain interconnection；The emitter stage of the first audion Q1 connects the source electrode of the second NMOS tube NM2, the base stage of the first audion Q1 and colelctor electrode
Ground connection；The drain electrode of the 3rd NMOS tube NM3 connects the drain electrode of the second PMOS PM2, and the grid of the 3rd NMOS tube NM3 connects the first PMOS
The drain electrode of PM1；The drain electrode of the 4th NMOS tube NM4 is followed by the source electrode of the 3rd NMOS tube NM3, the 4th NMOS tube by first resistor R1
The grid of NM4 connects the second enable signal, and the drain electrode of the 4th NMOS tube NM4 is followed by its source electrode by second resistance R2；Two or three pole
The emitter stage of pipe Q2 connects the source electrode of the 4th NMOS tube NM4；The base stage and grounded collector of the second audion Q2；3rd PMOS
Outfan of the drain electrode of PM3 for positive temperature coefficient current source module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610494424.7A CN105867511B (en) | 2016-06-29 | 2016-06-29 | A kind of Segmented temperature compensation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610494424.7A CN105867511B (en) | 2016-06-29 | 2016-06-29 | A kind of Segmented temperature compensation circuit |
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| Publication Number | Publication Date |
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| CN105867511A CN105867511A (en) | 2016-08-17 |
| CN105867511B true CN105867511B (en) | 2017-03-15 |
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| CN201610494424.7A Expired - Fee Related CN105867511B (en) | 2016-06-29 | 2016-06-29 | A kind of Segmented temperature compensation circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3807867A4 (en) * | 2018-06-12 | 2021-12-22 | BOE Technology Group Co., Ltd. | A circuit for providing a temperature-dependent common electrode voltage |
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| CN106455230A (en) * | 2016-11-18 | 2017-02-22 | 贵州恒芯微电子科技有限公司 | Linear constant-current power source having sectional temperature compensation function |
| CN108306258B (en) * | 2018-04-04 | 2023-12-29 | 奥然生物科技（上海）有限公司 | Over-temperature detection circuit and over-temperature protection circuit for heater |
| CN110333752A (en) * | 2019-08-06 | 2019-10-15 | 南京微盟电子有限公司 | A kind of firm power linear voltage regulator |
| CN111736651A (en) * | 2020-05-26 | 2020-10-02 | 中国电子科技集团公司第四十三研究所 | Temperature compensation constant current source circuit and temperature compensation method |
| CN112003614B (en) * | 2020-08-27 | 2022-08-02 | 中国电子科技集团公司第五十八研究所 | DDS output compensation circuit |
| CN114265467B (en) * | 2021-12-17 | 2023-03-21 | 贵州振华风光半导体股份有限公司 | Over-temperature protection and enabling control circuit |
| CN116505925B (en) * | 2023-03-21 | 2024-02-02 | 湖南芯易德科技有限公司 | Low-power-consumption power-on and power-off reset circuit with temperature compensation function and reset device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3825778A (en) * | 1973-02-09 | 1974-07-23 | Rca Corp | Temperature-sensitive control circuit |
| JP2004072681A (en) * | 2002-08-09 | 2004-03-04 | Fuji Electric Holdings Co Ltd | Comparator circuit and semiconductor integrated circuit having same |
| CN101290233A (en) * | 2007-04-19 | 2008-10-22 | 上海钜胜微电子有限公司 | Hall effect circuit temperature compensation method and its circuit |
| CN100470436C (en) * | 2007-07-30 | 2009-03-18 | 电子科技大学 | Piecewise linearly compensated CMOS bandgap voltage reference |
| CN102880220B (en) * | 2011-07-12 | 2016-01-06 | 联咏科技股份有限公司 | Temperature coefficient current shot generator and temperature coefficient current trigger generation module |
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2016
- 2016-06-29 CN CN201610494424.7A patent/CN105867511B/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3807867A4 (en) * | 2018-06-12 | 2021-12-22 | BOE Technology Group Co., Ltd. | A circuit for providing a temperature-dependent common electrode voltage |
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| CN105867511A (en) | 2016-08-17 |
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