CN102880220B - Temperature coefficient current shot generator and temperature coefficient current trigger generation module - Google Patents

Temperature coefficient current shot generator and temperature coefficient current trigger generation module Download PDF

Info

Publication number
CN102880220B
CN102880220B CN201110194126.3A CN201110194126A CN102880220B CN 102880220 B CN102880220 B CN 102880220B CN 201110194126 A CN201110194126 A CN 201110194126A CN 102880220 B CN102880220 B CN 102880220B
Authority
CN
China
Prior art keywords
current
temperature coefficient
transistor
drain
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201110194126.3A
Other languages
Chinese (zh)
Other versions
CN102880220A (en
Inventor
胡敏弘
吴振聪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Novatek Microelectronics Corp
Original Assignee
Novatek Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Novatek Microelectronics Corp filed Critical Novatek Microelectronics Corp
Priority to CN201110194126.3A priority Critical patent/CN102880220B/en
Publication of CN102880220A publication Critical patent/CN102880220A/en
Application granted granted Critical
Publication of CN102880220B publication Critical patent/CN102880220B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/10—Efficient use of energy, e.g. using compressed air or pressurized fluid as energy carrier
    • Y02P80/15—On-site combined power, heat or cool generation or distribution, e.g. combined heat and power [CHP] supply

Abstract

The present invention discloses a kind of temperature coefficient current shot generator, is used for generation one temperature coefficient current.This temperature coefficient current shot generator includes a positive temperature coefficient (PTC) current generating unit, is used for generation one first positive temperature coefficient (PTC) electric current; One negative temperature parameter current generation unit, is used for generation one first negative temperature parameter current; And a trigger element, the difference between current be used for according to a trigger temperatures and this first positive temperature coefficient (PTC) electric current and this first negative temperature parameter current, triggers to produce this temperature coefficient current.

Description

Temperature coefficient current shot generator and temperature coefficient current trigger generation module
Technical field
The present invention relates to a kind of temperature coefficient current shot generator and temperature coefficient current triggering generation module, especially relate to one and can utilize current canceling effect, to utilize the temperature coefficient current shot generator and temperature coefficient current triggering generation module that make temperature coefficient current transition before and after trigger temperatures more level and smooth compared with ball bearing made using.
Background technology
In response to the cause of characteristic of semiconductor, in many application, the output current of current source need be designed to have temperature coefficient (namely changing with variation of ambient temperature), to compensate the temperature effect of different circuit non-ideal factor.
For example, please refer to Fig. 1, Fig. 1 is the schematic diagram of known a pair of capacitor oscillator 10.In simple terms, one of two capacitor oscillator 10 desirable concussion frequency f idealf can be expressed as ideal=Ic/2C fv ref, the electric current I c that can be provided by a current source determines desirable concussion frequency f ideal.But, desirable concussion frequency f idealmeeting is temperature influence because of the non-ideal effects of two capacitor oscillator 10, and each influence factor adds the General Logistics Department, the relation (i.e. temperature coefficient, Temperature-Coefficient) of temperature and frequency is also non-linear, but comparatively remarkable in specific range of temperatures.In the case, current source need add nonlinear temperature coefficient (non-linearTemperature-Coefficient) when designing, and makes it provide to give the electric current I c of two capacitor oscillator 10 can compensate pair capacitor oscillator 10 frequency drift.In other words, frequency can be made to increase with temperature in a specific range of temperatures if each influence factor of script adds the General Logistics Department and rise, then needing design current Ic rise with temperature in this specific range of temperatures and decline to offset the frequency drift that each influence factor causes.
Please refer to Fig. 2, Fig. 2 is the known schematic diagram with a current source 20 of nonlinear temperature coefficient.As shown in Figure 2, current source 20 includes traditional band gap (bandgap) circuit 202, trigger element 204 and a generation unit 206.In simple terms, tradition energy band gap reference circuit 202 can provide the voltage and electric current with temperature coefficient and the voltage without temperature coefficient and electric current to give trigger element 204, therefore trigger element 204 triggers to control to switch generation unit 206 and exports under specific temperature conditions, makes the exportable output current Iout with temperature coefficient of generation unit 206.
For example, traditional energy band gap reference circuit 202 can provide a zero-temperature coefficient voltage V zTCgive a positive input terminal of a comparer 208 of trigger element 204.Trigger element 204 utilizes a transistor M1 of a current mirror to produce a positive temperature coefficient (PTC) electric current I pTC, make positive temperature coefficient (PTC) electric current I pTCflow through a resistance R pTCbe converted to a positive temperature coefficient (PTC) voltage V pTCgive a negative input end of comparer 208.Comparer 208 can by zero-temperature coefficient voltage V zTCwith positive temperature coefficient (PTC) voltage V pTCcompare, to export a control signal Vcon, and then control switching generation unit 206 exports.Tradition energy band gap reference circuit 202 provides zero-temperature coefficient voltage V zTCwith positive temperature coefficient (PTC) electric current I pTCmode should be known by those of ordinary skill of the present invention, do not repeat them here.
In addition, in generation unit 206, an amplifier 210 is configured to utilize feedbacks the voltage lockout of one positive input terminal at zero-temperature coefficient voltage V zTC(namely when the voltage of the positive input terminal of amplifier 210 is less than zero-temperature coefficient voltage V zTCtime, a transistor M2 conducting is with the voltage of the positive input terminal of lifting amplifier 210), to produce a zero-temperature coefficient electrical current I zTCflow through a resistance R zTC, the transistor M3 recycling a current mirror produces zero-temperature coefficient electrical current I zTCgive the high levle input end of a multiplexer 212.On the other hand, a transistor M4 of another current mirror is utilized to produce positive temperature coefficient (PTC) electric current I pTCgive the low level input end of multiplexer 212.Then, multiplexer 212 switches output zero-temperature coefficient electrical current I according to control signal Vcon again zTCwith positive temperature coefficient (PTC) electric current I pTC.
Notably, the example of Fig. 2 designs when environment temperature is a trigger temperatures T triggertime, zero-temperature coefficient voltage V zTCequal positive temperature coefficient (PTC) voltage V pTC.In the case, please refer to Fig. 3, Fig. 3 is ideally output current Iout, zero-temperature coefficient electrical current I in Fig. 2 zTCand positive temperature coefficient (PTC) electric current I pTCschematic diagram.As shown in Figures 2 and 3, when environment temperature is lower than trigger temperatures T triggertime, it is high levle that comparer 208 exports control signal Vcon, and therefore multiplexer 212 selects zero-temperature coefficient electrical current I zTCfor output current Iout exports.When environment temperature rises, positive temperature coefficient (PTC) voltage V pTCby with rising, and in environment temperature higher than trigger temperatures T triggertime, positive temperature coefficient (PTC) voltage V pTCzero-temperature coefficient voltage V can be greater than zTC-, the control signal Vcon transition that comparer 208 is exported is low level, and therefore multiplexer 212 selects positive temperature coefficient (PTC) electric current I pTCfor output current Iout exports.Thus, output current Iout in environment temperature lower than trigger temperatures T triggertime be zero-temperature coefficient, and in environment temperature higher than trigger temperatures T triggertime provide positive temperature coefficient (PTC) to offset for the negative temperature coefficient in compensating circuit, therefore output current Iout has nonlinear temperature coefficient within the scope of bulk temperature.
But, current source 20 uses comparer 208 comparative voltage to differentiate that temperature determines output current Iout again, comparatively complicated on circuit framework (comparer 208 basic structure needs a simple operation amplifier, at least 5 transistors) and this kind are subject to processing procedure impact and generation current uncontinuity in the mode that numeral carries out switching.As shown in Figure 3, output current Iout is at trigger temperatures T triggercurrent vs. temperature break can be formed, and zero-temperature coefficient electrical current I zTCwith positive temperature coefficient (PTC) electric current I pTCtwo current sources must be unanimously I at the current value of this break trigger.If processing procedure drift causes two current sources at trigger temperatures T triggerdo not mate, the situation of output current Iout discontinuous (discontinuous) when environment temperature passes through break, can be occurred because numeral switches.
For example, please refer to Fig. 4, Fig. 4 is output current Iout, zero-temperature coefficient electrical current I in Fig. 2 under nonideality zTCand positive temperature coefficient (PTC) electric current I pTCschematic diagram.As shown in Figure 4, if occur, processing procedure drift makes positive temperature coefficient (PTC) electric current I pTCat trigger temperatures T triggertime be not equal to zero-temperature coefficient electrical current I zTC, output current Iout can be caused discontinuous.
In addition, known framework is difficult to provide the electric current with repeatedly transition temperature coefficient, and the temperature coefficient before and after break has acute variation because comparer 208 exports transition impact (digit manipulation), therefore being difficult to any adjustment, can significantly increasing layout area and power consumption when being applied to the demand that different temperatures compensates.In addition, if traditional energy band gap reference circuit 202 is for producing negative temperature parameter current, needs the resistance that another use one resistance is L*R to balance negative temperature parameter current, causing a large amount of layout area to expend.In view of this, real necessity having improvement of known technology.
Summary of the invention
Therefore, namely fundamental purpose of the present invention is to provide one can utilize current canceling effect, and the temperature coefficient current shot generator making temperature coefficient current transition before and after trigger temperatures more level and smooth to utilize better simply circuit and temperature coefficient current trigger generation module.
The present invention discloses a kind of temperature coefficient current shot generator, is used for generation one temperature coefficient current.This temperature coefficient current shot generator includes a positive temperature coefficient (PTC) current generating unit, is used for generation one first positive temperature coefficient (PTC) electric current; One negative temperature parameter current generation unit, is used for generation one first negative temperature parameter current; And a trigger element, the difference between current be used for according to a trigger temperatures and this first positive temperature coefficient (PTC) electric current and this first negative temperature parameter current, triggers to produce this temperature coefficient current.
The present invention also discloses a kind of temperature coefficient current and triggers generation module, is used for generation one and adds up temperature coefficient current.This temperature coefficient current triggers generation module and includes multiple temperature coefficient current shot generator, is used for producing multiple temperature coefficient current respectively; And a sum unit, be used for adding up the plurality of temperature coefficient current, to produce this totalling temperature coefficient current.Each temperature coefficient current shot generator includes a positive temperature coefficient (PTC) current generating unit, is used for generation one first positive temperature coefficient (PTC) electric current; One negative temperature parameter current generation unit, is used for generation one first negative temperature parameter current; And a trigger element, the difference between current be used for according to a trigger temperatures and this first positive temperature coefficient (PTC) electric current and this first negative temperature parameter current, triggers to produce this temperature coefficient current.
Coordinate following schemes, the detailed description of embodiment and claims at this, by address after other object of the present invention and advantage be specified in.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of known a pair of capacitor oscillator.
Fig. 2 is the known schematic diagram with a current source of nonlinear temperature coefficient.
Fig. 3 is the schematic diagram of ideally an output current, a zero-temperature coefficient electrical current and a positive temperature coefficient (PTC) electric current in Fig. 2.
Fig. 4 is the schematic diagram of an output current, a zero-temperature coefficient electrical current and a positive temperature coefficient (PTC) electric current in Fig. 2 under nonideality.
Fig. 5 is the schematic diagram that in the embodiment of the present invention, a temperature coefficient current triggers generation module.
Fig. 6 is the schematic diagram of a temperature coefficient current shot generator in Fig. 5.
Fig. 7 A to Fig. 7 E is the schematic diagram of the Four types of the alternate embodiment of temperature coefficient current shot generator in Fig. 6.
Fig. 8 is another alternate embodiment that in Fig. 5, temperature coefficient current triggers generation module.
Fig. 9 A is the alternate embodiment that in Fig. 5, temperature coefficient current triggering generation module only comprises a temperature coefficient current shot generator.
Fig. 9 B is the schematic diagram of totalling temperature coefficient current, a zero-temperature coefficient electrical current and a temperature coefficient current in Fig. 9 A.
Figure 10 A is the alternate embodiment that in Fig. 5, temperature coefficient current triggering generation module selectivity comprises three temperature coefficient current shot generator.
Figure 10 B is the schematic diagram of totalling temperature coefficient current, a zero-temperature coefficient electrical current and three temperature coefficient current in Figure 10 A.
Wherein, description of reference numerals is as follows:
10 pairs of capacitor oscillator
20 current sources
202 traditional band gap circuit
204 trigger elements
206 generation units
208 comparers
210 amplifiers
212 multiplexers
50 temperature coefficient current trigger generation module
502 energy band gap reference circuit
504 sum unit
506 operational amplifiers
600 positive temperature coefficient (PTC) current generating units
602 negative temperature parameter current generation units
604 trigger elements
800 output units
Ic electric current
C felectric capacity
V ref, VA, VB, VC voltage
Iout output current
V zTCzero-temperature coefficient voltage
I zTC, I zTC', I zTCxzero-temperature coefficient electrical current
V pCTpositive temperature coefficient (PTC) voltage
I pTC, I pCT', I pTC1' ~ I pTC4', I pTCx' positive temperature coefficient (PTC) electric current
M1 ~ M24 transistor
Vcon control signal
R zTC, R pTC, R pTC', R nTC', Rout resistance
T triggertrigger temperatures
TC 1~ TC n, TC xtemperature coefficient current shot generator
I tC1~ I tCN, I tCxtemperature coefficient current
I nTC', I nTC1' ~ I nTC4' negative temperature parameter current
Iout ' totalling temperature coefficient current
Q1, Q2 carrier transistor
VDD system voltage
TCT 1~ TCT 4, TCT 3' type
I1, I2 electric current
K ' size ratio
Vout ' totalling temperaturecoefficient voltage
Embodiment
Please refer to Fig. 5, Fig. 5 is the schematic diagram that in the embodiment of the present invention, a temperature coefficient current triggers generation module 50.Temperature coefficient current triggers generation module 50 and includes an energy band gap reference circuit 502, temperature coefficient current shot generator TC 1~ TC nand a sum unit 504.In simple terms, energy band gap reference circuit 502 can produce a positive temperature coefficient (PTC) electric current I pTC', a negative temperature parameter current I nTC' and a zero-temperature coefficient electrical current I zTC'.Temperature coefficient current shot generator TC 1~ TC ntemperature coefficient current I can be produced respectively tC1~ I tCN.Sum unit 504 can add up zero-temperature coefficient electrical current I zTC' and temperature coefficient current I tC1~ I tCN, to produce a totalling temperature coefficient current Iout '.Wherein, temperature coefficient current shot generator TC 1~ TC nin each temperature coefficient current shot generator be utilize respectively current subtraction offset mode produce the temperature coefficient current with respective temperature coefficient break.Thus, temperature coefficient current shot generator TC 1~ TC nmore level and smooth temperature coefficient current I can be produced respectively tC1~ I tCN, recycling sum unit 504 adds up to produce has multiple temperature coefficient break and more level and smooth totalling temperature coefficient current Iout '.
Specifically, compare in traditional energy band gap reference circuit 202, energy band gap reference circuit 502 utilizes transistor M5, M6 to produce positive temperature coefficient (PTC) electric current I pTC', and utilize an operational amplifier 506 to produce negative temperature parameter current I nTC', therefore do not need to use in addition resistance that a resistance is L*R to balance negative temperature parameter current, can layout area be effectively reduced.In other words, in energy band gap reference circuit 502, due to voltage VA, VB equal (VA=VB=VEB1), therefore utilize the resistance R that the poor VEB1-VEB2 of the base emitter voltage of double carrier transistor Q1, Q2 and resistance are R pTC', positive temperature coefficient (PTC) electric current I can be produced pTC', shown in (1):
I PTC ′ = VEB 1 - VEB 2 R = V T ln K R - - - ( 1 )
Wherein, K represents that double carrier transistor Q2 can be considered and is formed in parallel by K double carrier transistor Q1.Because limit voltage VT is positive temperature coefficient (PTC), therefore by the known resistance R of formula (1) pTC' contained positive temperature coefficient (PTC) electric current I pTC' be positive temperature coefficient (PTC).
On the other hand, positive-negative input end input voltage VC, VB of adding operational amplifier 506 because voltage VA, VB are equal are equal, therefore utilize the resistance R that the poor VEB1 of the base emitter voltage of double carrier transistor Q1 and resistance are L*R nTC', can negative temperature parameter current I be produced nTC', such as formula (2) institute not:
I NTC ′ = VEB 1 L * R - - - ( 2 )
Wherein, because VEB1 has negative temperature coefficient, therefore resistance R nTC' contained negative temperature parameter current I nTC' be negative temperature coefficient.Thus, through suitable adjusting resistance R nTC' resistance L*R, can utilize and add up positive temperature coefficient (PTC) electric current I pTC' with negative temperature parameter current I nTC' produce zero-temperature coefficient electrical current I zTC'.Thus, energy band gap reference circuit 502 does not need to use in addition resistance that a resistance is L*R to balance negative temperature parameter current, can effectively reduce layout area.
On the other hand, please refer to Fig. 6, Fig. 6 is temperature coefficient current shot generator TC in Fig. 5 1~ TC na temperature coefficient current shot generator TC xschematic diagram.As shown in Figure 6, temperature coefficient current shot generator TC xinclude positive temperature coefficient (PTC) current generating unit 600, negative temperature parameter current generation unit 602 and a trigger element 604.In simple terms, positive temperature coefficient (PTC) current generating unit 600 can produce a positive temperature coefficient (PTC) electric current I pTC1', negative temperature parameter current generation unit 602 can produce a negative temperature parameter current I nTC1', trigger element 604 can according to a trigger temperatures T xand positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' a difference between current, trigger to produce a temperature coefficient current I tCx.Thus, temperature coefficient current shot generator TC xcurrent subtraction payment mode can be utilized to produce and to there is temperature coefficient break for trigger temperatures T xtemperature coefficient current I tCx.
Specifically, temperature coefficient current shot generator TC xbe designed to equal trigger temperatures T in an environment temperature xtime, positive temperature coefficient (PTC) electric current I pTC1' equal negative temperature parameter current I nTC1'.In the case, due to negative temperature parameter current I when environment temperature is less than trigger temperatures Tx nTC1' be greater than positive temperature coefficient (PTC) electric current I pTC1', therefore trigger element 604 can trigger when environment temperature is less than trigger temperatures Tx to produce temperature coefficient current I tCx, and temperature coefficient current I tCxthere is negative temperature coefficient; Or, due to positive temperature coefficient (PTC) electric current I when environment temperature is greater than trigger temperatures Tx pTC1' be greater than negative temperature parameter current I nTC1', therefore trigger element 604 can trigger when environment temperature is greater than trigger temperatures Tx to produce temperature coefficient current I tCx, and temperature coefficient current I tCxthere is positive temperature coefficient (PTC).Wherein, temperature coefficient current I tCxcan be a positive current or a negative current, namely trigger element 604 triggers with output temperature coefficient current I tCx, or trigger element 604 triggers to draw temperature coefficient current I tCx.
For example, please refer to Fig. 7 A to Fig. 7 D, Fig. 7 A to Fig. 7 D is temperature coefficient current shot generator TC in Fig. 6 xthe Four types TCT of alternate embodiment 1~ TCT 4schematic diagram, wherein, type TCT 1the exportable temperature coefficient current I with negative temperature coefficient tCx, type TCT 2the temperature coefficient current I with positive temperature coefficient (PTC) can be drawn tCx, type TCT 3the exportable temperature coefficient current I with positive temperature coefficient (PTC) tCx, type TCT 4the temperature coefficient current I with negative temperature coefficient can be drawn tCx, can represent by following formula:
Wherein, electric current I 1, I2 are at type TCT 1~ TCT 4middlely represent positive temperature coefficient (PTC) electric current I respectively pTC1' with negative temperature parameter current I nTC1' wherein one, sgn triggers at trigger element 604 with output temperature coefficient current I tCxtime be 1, and triggering to draw temperature coefficient current I tCxtime be-1, describe in detail please refer to following describe.
As shown in Figure 7 A, positive temperature coefficient (PTC) current generating unit 600 includes a transistor M7 of a current mirror, negative temperature parameter current generation unit 602 includes a transistor M8 and a current mirror (including transistor M9, M10), and trigger element 604 includes transistor M11, M12, as shown in Figure 7 A, namely a gate of transistor M7 is coupled to a gate (as shown in Figure 5) of a transistor M13 of its current mirror for its detailed architecture and connected mode; One gate of transistor M8 is coupled to a gate (as shown in Figure 5) of a transistor M14 of its current mirror; One gate of transistor M9 is coupled to a drain, and this drain is coupled to a drain of transistor M8; One gate of transistor M10 is coupled to this gate of transistor M9, and a drain is coupled to a drain of transistor M7; One gate of transistor M11 is coupled to a drain, and a drain is coupled between this drain of transistor M7 and this drain of transistor M10; One gate of transistor M12 (size is K ' times of transistor M11) is coupled to this gate of transistor M11.Wherein transistor M7, M8, M11, M12 is P type gold oxygen half (Metaloxidesemiconductor, MOS) transistor, and transistor M9, M10 are N-type MOS (metal-oxide-semiconductor) transistor.
In the case, in positive temperature coefficient (PTC) current generating unit 600, the positive temperature coefficient (PTC) electric current I that transistor M7 can export according to transistor M13 pTC', produce positive temperature coefficient (PTC) electric current I pTC1' (i.e. electric current I 2 in formula (three)).In negative temperature parameter current generation unit 602, the negative temperature parameter current I that transistor M8 can export according to transistor M14 nTC', produce a negative temperature parameter current I nTC2', transistor M9 can receive negative temperature parameter current I at its drain nTC2', the negative temperature parameter current I that transistor M10 can receive according to transistor M9 nTC2, draw negative temperature parameter current I at its drain nTC1' (i.e. electric current I 1 in formula (three)).
Notably, type TCT 1(i.e. temperature coefficient current shot generator TC x) be designed to equal trigger temperatures T in environment temperature xtime, positive temperature coefficient (PTC) electric current I pTC1' equal negative temperature parameter current I nTC1'.In the case, in trigger element 604, due to negative temperature parameter current I when environment temperature is less than trigger temperatures Tx nTC1' be greater than positive temperature coefficient (PTC) electric current I pTC1', therefore transistor M11 can be less than trigger temperatures T in environment temperature triggerin ' time, export a negative temperature parameter current I nTC3', negative temperature parameter current I nTC3' equal negative temperature parameter current I nTC1' deduct positive temperature coefficient (PTC) electric current I pTC1', the negative temperature parameter current I that transistor M12 can export according to transistor M11 nTC3', the temperature coefficient current I with negative temperature coefficient is exported at a drain tCx(be negative temperature parameter current I nTC3' K doubly).On the contrary, because environment temperature is greater than trigger temperatures T xtime positive temperature coefficient (PTC) electric current I pTC1' should negative temperature parameter current I be greater than nTC1', but can because transistor M7 ducting capacity is comparatively strong, transistor M10 ducting capacity is more weak makes positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' equal, therefore transistor M11 is greater than trigger temperatures T in environment temperature trigger' time, not output current, make temperature coefficient current I tCxbe 0.Thus, type TCT 1trigger temperatures T can be less than in environment temperature triggerin ' time, exports the temperature coefficient current I with negative temperature coefficient tCx, and be greater than trigger temperatures T in environment temperature triggerin ' time, is output current not, and owing to utilizing current mirror to carry out positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' to subtract each other payment be simulated operation, therefore at trigger temperatures T trigger' front and back temperature coefficient current I tCxcomparatively level and smooth and the structure of the more known comparer of circuit is simple.
Similarly, please refer to Fig. 7 B, type TCT 2with type TCT 1roughly similar, therefore use the assembly similar to framework to represent with same-sign, and related description can describe with reference to above.Type TCT 2with type TCT 1main Differences be that transistor M15, M16 that trigger element 604 comprises are N-type MOS (metal-oxide-semiconductor) transistor, can be used to trigger to draw temperature coefficient current I tCx(i.e. negative current), therefore positive temperature coefficient (PTC) electric current I pTC1electric current I 1 in ' representative formula (three) and negative temperature parameter current I nTC1electric current I 2 in ' representative formula (three).
Type TCT 2(i.e. temperature coefficient current shot generator TC x) be also be designed to equal trigger temperatures T in environment temperature xtime, positive temperature coefficient (PTC) electric current I pTC1' equal negative temperature parameter current I nTC1'.In the case, in trigger element 604, due to positive temperature coefficient (PTC) electric current I when environment temperature is greater than trigger temperatures Tx pTC1' be greater than negative temperature parameter current I nTC1', therefore transistor M15 can be greater than trigger temperatures T in environment temperature triggerin ' time, draw a positive temperature coefficient (PTC) electric current I pTC2', positive temperature coefficient (PTC) electric current I pTC2' equal positive temperature coefficient (PTC) electric current I pTC1' deduct negative temperature parameter current I nTC1', the positive temperature coefficient (PTC) electric current I that transistor M16 can draw according to transistor M15 pTC2', the temperature coefficient current I with positive temperature coefficient (PTC) is drawn at a drain tCx(be K times of positive temperature coefficient (PTC) electric current I pTC2' negative current).On the contrary, transistor M15 is less than trigger temperatures T in environment temperature triggerin ' time, do not draw electric current, make temperature coefficient current I tCxbe 0.Thus, type TCT 2trigger temperatures T can be greater than in environment temperature triggerin ' time, draws the temperature coefficient current I with positive temperature coefficient (PTC) tCx, and be less than trigger temperatures T in environment temperature triggerin ' time, does not draw electric current, and owing to utilizing current mirror to carry out positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' to subtract each other payment be simulated operation, therefore at trigger temperatures T trigger' front and back temperature coefficient current I tCxcomparatively level and smooth.
On the other hand, as seen in figure 7 c, negative temperature parameter current generation unit 602 includes a transistor M17 of a current mirror, positive temperature coefficient (PTC) current generating unit 600 includes a transistor M18 and a current mirror (including transistor M19, M20), and trigger element 604 includes transistor M21, M22, as seen in figure 7 c, namely a gate of transistor M17 is coupled to this gate (as shown in Figure 5) of the transistor M14 of its current mirror for its detailed architecture and connected mode; One gate of transistor M18 is coupled to this gate (as shown in Figure 5) of the transistor M13 of its current mirror; One gate of transistor M19 is coupled to a drain, and this drain is coupled to a drain of transistor M18; One gate of transistor M20 is coupled to this gate of transistor M19, and a drain is coupled to a drain of transistor M17; One gate of transistor M21 is coupled to a drain, and this drain is coupled between this drain of transistor M17 and this drain of transistor M20; One gate of transistor M22 (size is K ' times of transistor M21) is coupled to this gate of transistor M11.Wherein transistor M17, M18, M21, M22 is P type MOS (metal-oxide-semiconductor) transistor, and transistor M19, M20 are N-type MOS (metal-oxide-semiconductor) transistor.
In the case, in negative temperature parameter current generation unit 602, the negative temperature parameter current I that transistor M17 can export according to transistor M14 nTC', produce negative temperature parameter current I nTC1' (i.e. electric current I 2 in formula (three)).In positive temperature coefficient (PTC) current generating unit 600, the positive temperature coefficient (PTC) electric current I that transistor M18 can export according to transistor M13 pTC', produce a positive temperature coefficient (PTC) electric current I pTC3', transistor M19 can receive positive temperature coefficient (PTC) electric current I at its drain pTC3', the positive temperature coefficient (PTC) electric current I that transistor M20 can receive according to transistor M19 pTC3', draw positive temperature coefficient (PTC) electric current I at its drain pTC1' (i.e. electric current I 1 in formula (three)).
Notably, type TCT 3(i.e. temperature coefficient current shot generator TC x) be designed to equal trigger temperatures T in environment temperature xtime, positive temperature coefficient (PTC) electric current I pTC1' equal negative temperature parameter current I nTC1'.In the case, in trigger element 604, due to positive temperature coefficient (PTC) electric current I when environment temperature is greater than trigger temperatures Tx pTC1' be greater than negative temperature parameter current I nTC1', therefore transistor M21 can be greater than trigger temperatures T in environment temperature triggerin ' time, export a positive temperature coefficient (PTC) electric current I pTC4', positive temperature coefficient (PTC) electric current I pTC4' equal positive temperature coefficient (PTC) electric current I pTC1' deduct negative temperature parameter current I nTC1', the positive temperature coefficient (PTC) electric current I that transistor M22 can export according to transistor M21 pTC4', the temperature coefficient current I with positive temperature coefficient (PTC) is exported at a drain tCx(be positive temperature coefficient (PTC) electric current I pTC4' K doubly).On the contrary, because environment temperature is less than trigger temperatures T xtime negative temperature parameter current I nTC1' positive temperature coefficient (PTC) electric current I should be greater than pTC1', but can because transistor M17 ducting capacity is comparatively strong, transistor M20 ducting capacity is more weak makes negative temperature parameter current I nTC1' with positive temperature coefficient (PTC) electric current I pTC1' equal, therefore transistor M21 is less than trigger temperatures T in environment temperature trigger' time, not output current, make temperature coefficient current I tCxbe 0.Thus, type TCT 3trigger temperatures T can be greater than in environment temperature triggerin ' time, exports the temperature coefficient current I with positive temperature coefficient (PTC) tCx, and be less than trigger temperatures T in environment temperature triggerin ' time, is output current not, and owing to utilizing current mirror to carry out positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' to subtract each other payment be simulated operation, therefore at trigger temperatures T trigger' front and back temperature coefficient current I tCxcomparatively level and smooth.
Similarly, please refer to Fig. 7 D, type TCT 4with type TCT 3roughly similar, therefore use the assembly similar to framework to represent with same-sign, and related description can describe with reference to above.Type TCT 4with type TCT 3main Differences be that transistor M23, M24 that trigger element 604 comprises are N-type MOS (metal-oxide-semiconductor) transistor, can be used to trigger to draw temperature coefficient current I tCx(i.e. negative current), therefore negative temperature parameter current I nTC1electric current I 1 in ' representative formula (three) and positive temperature coefficient (PTC) electric current I pTC1electric current I 2 in ' representative formula (three).
Type TCT 4(i.e. temperature coefficient current shot generator TC x) be also be designed to equal trigger temperatures T in environment temperature xtime, positive temperature coefficient (PTC) electric current I pTC1' equal negative temperature parameter current I nTC1'.In the case, in trigger element 604, due to negative temperature parameter current I when environment temperature is less than trigger temperatures Tx nTC1' be greater than positive temperature coefficient (PTC) electric current I pTC1', therefore transistor M23 can be less than trigger temperatures T in environment temperature triggerin ' time, draw a negative temperature parameter current I nTC4', negative temperature parameter current I nTC4' equal negative temperature parameter current I nTC1' deduct positive temperature coefficient (PTC) electric current I pTC1', the negative temperature parameter current I that transistor M24 can draw according to transistor M23 nTC4', the temperature coefficient current I with negative temperature coefficient is drawn at a drain tCx(be K times of negative temperature parameter current I nTC4' negative current).On the contrary, transistor M23 is greater than trigger temperatures T in environment temperature triggerin ' time, do not draw electric current, make temperature coefficient current I tCxbe 0.Thus, type TCT 4trigger temperatures T can be less than in environment temperature triggerin ' time, draws the temperature coefficient current I with negative temperature coefficient tCx, and be less than trigger temperatures T in environment temperature triggerin ' time, does not draw electric current, and owing to utilizing current mirror to carry out positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' to subtract each other payment be simulated operation, therefore at trigger temperatures T trigger' front and back temperature coefficient current I tCxcomparatively level and smooth and the structure of the more known comparer of circuit is simple.
It should be noted that main spirits of the present invention is that each temperature coefficient current shot generator can utilize current mirror to carry out positive temperature coefficient (PTC) electric current and negative temperature parameter current or even zero-temperature coefficient electrical current (as figure five I zTC' producing method) subtract each other payment mode, with at temperature coefficient break while produce temperature coefficient current and another side not generation current, therefore before and after trigger temperatures, temperature coefficient current is comparatively level and smooth, and because not needing comparer so circuit is comparatively simple, more can add up multiple temperature coefficient current that multiple temperature coefficient current shot generator produces further, there is multiple temperature coefficient break and more level and smooth totalling temperature coefficient current to produce.Those of ordinary skill in the art when modifying according to this or change, and are not limited thereto.For example, as long as energy band gap reference circuit 502 can produce positive temperature coefficient (PTC) electric current I pTC', negative temperature parameter current I nTC' and zero-temperature coefficient electrical current I zTC', and be not limited to framework of the present invention; As long as positive temperature coefficient (PTC) current generating unit 600 and negative temperature parameter current generation unit 602 can produce positive temperature coefficient (PTC) electric current I in each temperature coefficient current shot generator pTC1' (or zero-temperature coefficient electrical current) and negative temperature parameter current I nTC1' (or zero-temperature coefficient electrical current), makes trigger element 604 utilize current subtraction payment mode to produce and has more level and smooth temperature coefficient current I tCx, and be not limited to the embodiment that the present invention uses current mirror.
Although the embodiment of above-mentioned Fig. 7 A to 7E figure all produces temperature coefficient current for utilizing positive temperature coefficient (PTC) electric current and negative temperature parameter current to subtract each other to offset, the present invention also can utilize positive temperature coefficient (PTC) electric current or negative temperature parameter current and zero-temperature coefficient electrical current to subtract each other to offset and produce temperature coefficient current.For example, please refer to 7E figure, 7E figure is the type TCT shown in Fig. 7 C 3alternate embodiment one type TCT 3' schematic diagram.Type TCT shown in 7E figure 3' with the type TCT shown in Fig. 7 C 3roughly similar, its essential difference is the type TCT shown in Fig. 7 C 3' middle negative temperature parameter current generation unit 602 also comprises a transistor Mx with as zero-temperature coefficient electrical current generation unit, one gate of transistor Mx is also coupled to this gate (as shown in Figure 5) of transistor M13, is used for the positive temperature coefficient (PTC) electric current I exported according to transistor M13 pTC', produce a positive temperature coefficient (PTC) electric current I pTCx', and then the negative temperature parameter current I produced with transistor M17 nTC' add up generation one zero-temperature coefficient electrical current I zTCx(i.e. electric current I 2 in formula (three)).In other words, compare at type TCT 3utilize positive temperature coefficient (PTC) electric current I pTC1' with negative temperature parameter current I nTC1' subtract each other payment to produce the temperature coefficient current I with positive temperature coefficient (PTC) tCx, type TCT 3' be utilize positive temperature coefficient (PTC) electric current I pTC1' with zero-temperature coefficient electrical current I zTCx' subtract each other payment to produce the temperature coefficient current I with positive temperature coefficient (PTC) tCx.Thus, due to compare design positive temperature coefficient (PTC) electric current and negative temperature parameter current at trigger temperatures T triggerin ' time, is equal, and during use zero-temperature coefficient electrical current, its electric current under all temperature is identical, and design complexities therefore can be made lower.
The rest may be inferred, can type TCT shown in Fig. 7 A 1positive temperature coefficient (PTC) current generating unit 600, the type TCT shown in Fig. 7 B 2positive temperature coefficient (PTC) current generating unit 602, the type TCT shown in Fig. 7 D 4positive temperature coefficient (PTC) current generating unit 600 add an electric intergranular respectively, to produce zero-temperature coefficient electrical current as zero-temperature coefficient electrical current generation unit, produce temperature coefficient current I with positive temperature coefficient (PTC) electric current or negative temperature parameter current payment tCx.
In addition, temperature coefficient current described in the invention triggers generation module 50 and can be applicable in the circuit of any use reference current source, and be not limited to energy band gap reference circuit, and current-to-voltage convertor (I-Vconverter) also can be utilized to be converted to current source, or with other circuit conversion for analog or digital signal.For example, please refer to Fig. 8, Fig. 8 is the alternate embodiment that in Fig. 5, temperature coefficient current triggers generation module 50.As shown in Figure 8, temperature coefficient current triggering generation module 50 also comprises an output unit 800.Output unit 800 can utilize current mirror to copy and add up temperature coefficient current Iout ', directly produce at a current output terminal and add up temperature coefficient current Iout ', also in addition copied totalling temperature coefficient current Iout ' can be utilized a resistance Rout or other impedance component, add up temperaturecoefficient voltage Vout ' to produce one at a current output terminal.Notably, in other embodiments, output unit 800 also can only for single temperature coefficient current shot generator, in addition, totalling temperature coefficient current Iout ' can only utilize resistance Rout or other impedance component to add up temperaturecoefficient voltage Vout ' to produce by output unit 800, and is not limited to output unit 800 in Fig. 8 and produces totalling temperature coefficient current Iout ' and totalling temperaturecoefficient voltage Vout ' simultaneously.
In addition, type TCT 1~ TCT 4middle size than be all K ' times, visual actual demand in application and be different proportion, temperature coefficient current shot generator TC 1~ TC nquantity can be one or more type TCT 1~ TCT 4in dissimilar temperature coefficient current shot generator, temperature coefficient current shot generator TC 1~ TC ndifferent trigger temperatures T can be had trigger', to design the temperature coefficient adding up temperature coefficient current Iout ' according to the actual requirements, and then compensate the temperature effect of the different circuit non-ideal factors applied.
For example, please refer to Fig. 9 A and Fig. 9 B, Fig. 9 A is that in Fig. 5, temperature coefficient current triggering generation module 50 selectivity only comprises a temperature coefficient current shot generator TC 1alternate embodiment, and Fig. 9 B adds up temperature coefficient current Iout ', zero-temperature coefficient electrical current I in Fig. 9 A zTC' and temperature coefficient current I tC1schematic diagram, wherein, temperature coefficient current shot generator TC 1for type TCT 3, and its size is worth than K ' and is 2.5 and trigger temperatures T trigger' be-10 DEG C.As shown in Figure 9 B, due to temperature coefficient current I tC1set type TCT 3utilize current subtraction to offset mode to produce, therefore export the temperature coefficient current I with positive temperature coefficient (PTC) when environment temperature is greater than-10 DEG C tC1, and when environment temperature is less than-10 DEG C not output current, therefore with zero-temperature coefficient electrical current I zTC' totalling temperature coefficient current the Iout ' that produces after superposition is in an analog fashion comparatively more level and smooth than known digital switching mode.
On the other hand, please refer to Figure 10 A and Figure 10 B, Figure 10 A is that in Fig. 5, temperature coefficient current triggering generation module 50 selectivity comprises three temperature coefficient current shot generator TC 1~ TC 3alternate embodiment, and Figure 10 B adds up temperature coefficient current Iout ', zero-temperature coefficient electrical current I in Figure 10 A zTC' and temperature coefficient current I tC1~ I tC3schematic diagram, wherein, temperature coefficient current shot generator TC 1for type TCT 3, and its size is worth than K ' and is 2.5 and trigger temperatures T trigger' be-10 DEG C; Temperature coefficient current shot generator TC 2for type TCT 1, and its size is worth than K ' and is 1.5 and trigger temperatures T trigger' be-10 DEG C; Temperature coefficient current shot generator TC 3for type TCT 2, and its size is worth than K ' and is 1.5 and trigger temperatures T trigger' be-10 DEG C.As shown in Figure 10 B, temperature coefficient current I in Figure 10 B tC1~ I tC3produce temperature coefficient current I tC1~ I tC3with temperature coefficient current I in Fig. 9 B tC1produce temperature coefficient current I tC1mode similar, can with reference to describing in the past.
The essential difference of Figure 10 B and Fig. 9 B is: temperature coefficient current shot generator TC 1k ' be worth comparatively temperature coefficient current shot generator TC 2~ TC 3k ' value large, therefore temperature coefficient current I tC1~ I tC3with zero-temperature coefficient electrical current I zTC' central temperature coefficient current the I of totalling temperature coefficient current Iout ' that produces after superposition in an analog fashion tC1composition is higher; And temperature coefficient current shot generator TC 3trigger temperatures T trigger' do not coexist temperature coefficient current shot generator TC 1~ TC 2trigger temperatures T trigger', therefore add up temperature coefficient current Iout ' and there are two temperature coefficient breaks.Thus, suitable design temperature coefficient current shot generator TC is utilized 1~ TC ntype, size is than K ' and trigger temperatures T trigger', namely can simple current mirror design and do not need complicated comparer obtain comparatively level and smooth and have the totalling temperature coefficient current Iout ' of multiple temperature coefficient break, and then compensate the temperature effect of the different circuit non-ideal factors applied.
In known technology, owing to using the digit manipulation of comparer to carry out switching to obtain temperature coefficient current, therefore circuit is comparatively complicated and temperature coefficient current has non-continuous event near temperature coefficient break.In comparison, temperature coefficient current shot generator of the present invention utilizes current mirror to carry out the simulated operation of current subtraction payment, therefore can obtain more level and smooth temperature coefficient current by better simply circuit.Further, temperature coefficient current of the present invention triggers generation module and can design and add up multiple temperature coefficient current shot generator, to produce comparatively level and smooth and there is the totalling temperature coefficient current of multiple temperature coefficient break, and then compensate the temperature effect of the different circuit non-ideal factors applied.
Generally speaking, the present invention can current subtraction payment simulated operation, obtain more level and smooth temperature coefficient current with better simply circuit, with realistic demand.
The foregoing is only the preferred embodiments of the present invention, all equalizations done according to the claims in the present invention change and modify, and all should belong to covering scope of the present invention.

Claims (56)

1. a temperature coefficient current shot generator, is used for generation one temperature coefficient current, it is characterized in that, includes:
One positive temperature coefficient (PTC) current generating unit, is used for generation one first positive temperature coefficient (PTC) electric current;
One negative temperature parameter current generation unit, is used for generation one first negative temperature parameter current; And
One trigger element, the difference between current be used for according to a trigger temperatures and this first positive temperature coefficient (PTC) electric current and this first negative temperature parameter current, triggers to produce this temperature coefficient current with temperature correlation,
Wherein this trigger element is when an environment temperature is less than this trigger temperatures, trigger to produce this temperature coefficient current, and this temperature coefficient current has negative temperature coefficient; Or this environment temperature is when being greater than this trigger temperatures, trigger to produce this temperature coefficient current, and this temperature coefficient current has positive temperature coefficient (PTC).
2. temperature coefficient current shot generator as claimed in claim 1, it is characterized in that, when an environment temperature equals this trigger temperatures, this first positive temperature coefficient (PTC) electric current equals this first negative temperature parameter current.
3. temperature coefficient current shot generator as claimed in claim 1, is characterized in that, this trigger element triggers to export this temperature coefficient current.
4. temperature coefficient current shot generator as claimed in claim 1, is characterized in that, this trigger element triggers to draw this temperature coefficient current.
5. temperature coefficient current shot generator as claimed in claim 1, is characterized in that, also comprise a zero-temperature coefficient electrical current generation unit, be used for producing a zero-temperature coefficient electrical current according to this first positive temperature coefficient (PTC) electric current; This trigger element, according to a difference between current of this trigger temperatures and this zero-temperature coefficient electrical current and this first negative temperature parameter current, triggers to produce this temperature coefficient current.
6. temperature coefficient current shot generator as claimed in claim 1, is characterized in that, also comprise a zero-temperature coefficient electrical current generation unit, be used for producing a zero-temperature coefficient electrical current according to this first negative temperature parameter current; This trigger element, according to a difference between current of this trigger temperatures and this zero-temperature coefficient electrical current and this first positive temperature coefficient (PTC) electric current, triggers to produce this temperature coefficient current.
7. temperature coefficient current shot generator as claimed in claim 1, it is characterized in that, this positive temperature coefficient (PTC) current generating unit includes a first transistor of one first current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of a transistor seconds of this first current mirror, be used for the one second positive temperature coefficient (PTC) electric current exported according to this transistor seconds, produce this first positive temperature coefficient (PTC) electric current.
8. temperature coefficient current shot generator as claimed in claim 7, it is characterized in that, this negative temperature parameter current generation unit includes:
One third transistor, belong to one second current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of one the 4th transistor of this second current mirror, be used for one second negative temperature parameter current exported according to the 4th transistor, produce one the 3rd negative temperature parameter current; And
One the 3rd current mirror, includes:
One the 5th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, and this drain is coupled to this drain of this third transistor, is used for receiving the 3rd negative temperature parameter current at this drain of the 5th transistor; And
One the 6th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 5th transistor, this drain is coupled to this drain of this first transistor, be used for the 3rd negative temperature parameter current received according to the 5th transistor, draw this first negative temperature parameter current at this drain of the 6th transistor.
9. temperature coefficient current shot generator as claimed in claim 8, it is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, export one the 4th negative temperature parameter current, the 4th negative temperature parameter current equals this first negative temperature parameter current and deducts this first positive temperature coefficient (PTC) electric current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th negative temperature parameter current exported according to the 7th transistor, exports this temperature coefficient current with negative temperature coefficient at this drain.
10. temperature coefficient current shot generator as claimed in claim 9, it is characterized in that, this the first transistor, this transistor seconds, third transistor, the 4th transistor, the 7th transistor and the 8th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor and the 6th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
11. temperature coefficient current shot generator as claimed in claim 8, is characterized in that, also comprise a zero-temperature coefficient electrical current generation unit, this zero-temperature coefficient electrical current generation unit includes this positive temperature coefficient (PTC) current generating unit and a transistor; One gate of this transistor is coupled to this gate of the 4th transistor of this second current mirror, is used for this second negative temperature parameter current exported according to the 4th transistor, produces a negative temperature parameter current; This first positive temperature coefficient (PTC) electric current of this zero-temperature coefficient electrical current generation unit and this negative temperature parameter current, produce a zero-temperature coefficient electrical current.
12. temperature coefficient current shot generator as claimed in claim 11, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, export one the 4th negative temperature parameter current, the 4th negative temperature parameter current equals this first negative temperature parameter current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th negative temperature parameter current exported according to the 7th transistor, exports this temperature coefficient current with negative temperature coefficient at this drain.
13. temperature coefficient current shot generator as claimed in claim 8, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, draw one the 3rd positive temperature coefficient (PTC) electric current, the 3rd positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this first negative temperature parameter current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd positive temperature coefficient (PTC) electric current drawn according to the 7th transistor, draws this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
14. temperature coefficient current shot generator as claimed in claim 13, it is characterized in that, this the first transistor, this transistor seconds, third transistor and the 4th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor, the 6th transistor, the 7th transistor and the 8th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
15. temperature coefficient current shot generator as claimed in claim 8, is characterized in that, also comprise a zero-temperature coefficient electrical current generation unit, this zero-temperature coefficient electrical current generation unit includes this negative temperature parameter current generation unit and a transistor; One gate of this transistor is coupled to this gate of this transistor seconds of this first current mirror, is used for this second positive temperature coefficient (PTC) electric current exported according to this transistor seconds, produces a positive temperature coefficient (PTC) electric current; This first negative temperature parameter current of this zero-temperature coefficient electrical current generation unit and this positive temperature coefficient (PTC) electric current, produce a zero-temperature coefficient electrical current.
16. temperature coefficient current shot generator as claimed in claim 15, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, draw one the 3rd positive temperature coefficient (PTC) electric current, the 3rd positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd positive temperature coefficient (PTC) electric current drawn according to the 7th transistor, draws this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
17. temperature coefficient current shot generator as claimed in claim 1, it is characterized in that, this negative temperature parameter current generation unit includes a first transistor of one first current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of a transistor seconds of this first current mirror, be used for one second negative temperature parameter current exported according to this transistor seconds, produce this first negative temperature parameter current.
18. temperature coefficient current shot generator as claimed in claim 17, it is characterized in that, this positive temperature coefficient (PTC) current generating unit includes:
One third transistor, belong to one second current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of one the 4th transistor of this second current mirror, be used for the one second positive temperature coefficient (PTC) electric current exported according to the 4th transistor, produce one the 3rd positive temperature coefficient (PTC) electric current; And
One the 3rd current mirror, includes:
One the 5th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, and this drain is coupled to this drain of this third transistor, is used for receiving the 3rd positive temperature coefficient (PTC) electric current at this drain; And
One the 6th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 5th transistor, this drain is coupled to this drain of this first transistor, be used for the 3rd positive temperature coefficient (PTC) electric current received according to the 5th transistor, draw this first positive temperature coefficient (PTC) electric current at this drain.
19. temperature coefficient current shot generator as claimed in claim 18, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, export one the 4th positive temperature coefficient (PTC) electric current, the 4th positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this first negative temperature parameter current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th positive temperature coefficient (PTC) electric current exported according to the 7th transistor, exports this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
20. temperature coefficient current shot generator as claimed in claim 19, it is characterized in that, this the first transistor, this transistor seconds, third transistor, the 4th transistor, the 7th transistor and the 8th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor and the 6th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
21. temperature coefficient current shot generator as claimed in claim 18, is characterized in that, also comprise a zero-temperature coefficient electrical current generation unit, this zero-temperature coefficient electrical current generation unit includes this negative temperature parameter current generation unit and a transistor; One gate of this transistor is coupled to this gate of the 4th transistor of this second current mirror, is used for this second positive temperature coefficient (PTC) electric current exported according to the 4th transistor, produces a positive temperature coefficient (PTC) electric current; This first negative temperature parameter current of this zero-temperature coefficient electrical current generation unit and this positive temperature coefficient (PTC) electric current, produce a zero-temperature coefficient electrical current.
22. temperature coefficient current shot generator as claimed in claim 21, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, export one the 4th positive temperature coefficient (PTC) electric current, the 4th positive temperature coefficient (PTC) electric current equals the 3rd positive temperature coefficient (PTC) electric current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th positive temperature coefficient (PTC) electric current exported according to the 7th transistor, exports this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
23. temperature coefficient current shot generator as claimed in claim 18, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, draw one the 3rd negative temperature parameter current, the 3rd negative temperature parameter current equals this first negative temperature parameter current and deducts this first positive temperature coefficient (PTC) electric current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd negative temperature parameter current drawn according to the 7th transistor, draws this temperature coefficient current with negative temperature coefficient at this drain.
24. temperature coefficient current shot generator as claimed in claim 23, it is characterized in that, this the first transistor, this transistor seconds, third transistor and the 4th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor, the 6th transistor, the 7th transistor and the 8th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
25. temperature coefficient current shot generator as claimed in claim 18, is characterized in that, also comprise a zero-temperature coefficient electrical current generation unit, this zero-temperature coefficient electrical current generation unit includes this positive temperature coefficient (PTC) current generating unit and a transistor; One gate of this transistor is coupled to this gate of this transistor seconds of this first current mirror, is used for this second negative temperature parameter current exported according to this transistor seconds, produces a negative temperature parameter current; This first positive temperature coefficient (PTC) electric current of this zero-temperature coefficient electrical current generation unit and this negative temperature parameter current, produce a zero-temperature coefficient electrical current.
26. temperature coefficient current shot generator as claimed in claim 25, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, draw one the 3rd negative temperature parameter current, the 3rd negative temperature parameter current equals this first negative temperature parameter current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd negative temperature parameter current drawn according to the 7th transistor, draws this temperature coefficient current with negative temperature coefficient at this drain.
27. temperature coefficient current shot generator as claimed in claim 1, is characterized in that, also include an impedance component, are used for, according to this temperature coefficient current, producing a temperaturecoefficient voltage.
28. 1 kinds of temperature coefficient current trigger generation modules, are used for generation one to add up temperature coefficient current, it is characterized in that, include:
Multiple temperature coefficient current shot generator, is used for producing multiple temperature coefficient current respectively, and each temperature coefficient current shot generator includes:
One positive temperature coefficient (PTC) current generating unit, is used for generation one first positive temperature coefficient (PTC) electric current;
One negative temperature parameter current generation unit, is used for generation one first negative temperature parameter current; And
One trigger element, the difference between current be used for according to a trigger temperatures and this first positive temperature coefficient (PTC) electric current and this first negative temperature parameter current, triggers to produce this temperature coefficient current; And
One sum unit, is used for adding up the plurality of temperature coefficient current, to produce this totalling temperature coefficient current.
29. temperature coefficient current trigger modules as claimed in claim 28, is characterized in that, when an environment temperature equals this trigger temperatures, this first positive temperature coefficient (PTC) electric current equals this first negative temperature parameter current.
30. temperature coefficient current trigger modules as claimed in claim 28, is characterized in that, this trigger element, when an environment temperature is less than this trigger temperatures, trigger to produce this temperature coefficient current, and this temperature coefficient current has negative temperature coefficient.
31. temperature coefficient current trigger modules as claimed in claim 28, is characterized in that, this trigger element, when an environment temperature is greater than this trigger temperatures, trigger to produce this temperature coefficient current, and this temperature coefficient current has positive temperature coefficient (PTC).
32. temperature coefficient current trigger modules as claimed in claim 28, is characterized in that, this trigger element triggers to export this temperature coefficient current.
33. temperature coefficient current trigger modules as claimed in claim 28, is characterized in that, this trigger element triggers to draw this temperature coefficient current.
34. temperature coefficient current trigger modules as claimed in claim 28, it is characterized in that, this each temperature coefficient current shot generator also comprises a zero-temperature coefficient electrical current generation unit, is used for producing a zero-temperature coefficient electrical current according to this first positive temperature coefficient (PTC) electric current; This trigger element, according to a difference between current of this trigger temperatures and this zero-temperature coefficient electrical current and this first negative temperature parameter current, triggers to produce this temperature coefficient current.
35. temperature coefficient current trigger modules as claimed in claim 28, it is characterized in that, this each temperature coefficient current shot generator also comprises a zero-temperature coefficient electrical current generation unit, is used for producing a zero-temperature coefficient electrical current according to this first negative temperature parameter current; This trigger element, according to a difference between current of this trigger temperatures and this zero-temperature coefficient electrical current and this first positive temperature coefficient (PTC) electric current, triggers to produce this temperature coefficient current.
36. temperature coefficient current trigger modules as claimed in claim 28, it is characterized in that, this positive temperature coefficient (PTC) current generating unit includes a first transistor of one first current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of a transistor seconds of this first current mirror, be used for the one second positive temperature coefficient (PTC) electric current exported according to this transistor seconds, produce this first positive temperature coefficient (PTC) electric current.
37. temperature coefficient current trigger modules as claimed in claim 36, it is characterized in that, this negative temperature parameter current generation unit includes:
One third transistor, belong to one second current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of one the 4th transistor of this second current mirror, be used for one second negative temperature parameter current exported according to the 4th transistor, produce one the 3rd negative temperature parameter current; And
One the 3rd current mirror, includes:
One the 5th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, and this drain is coupled to this drain of this third transistor, is used for receiving the 3rd negative temperature parameter current at this drain of the 5th transistor; And
One the 6th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 5th transistor, this drain is coupled to this drain of this first transistor, be used for the 3rd negative temperature parameter current received according to the 5th transistor, draw this first negative temperature parameter current at this drain of the 6th transistor.
38. temperature coefficient current trigger modules as claimed in claim 37, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, export one the 4th negative temperature parameter current, the 4th negative temperature parameter current equals this first negative temperature parameter current and deducts this first positive temperature coefficient (PTC) electric current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th negative temperature parameter current exported according to the 7th transistor, exports this temperature coefficient current with negative temperature coefficient at this drain.
39. temperature coefficient current trigger modules as claimed in claim 38, it is characterized in that, this the first transistor, this transistor seconds, third transistor, the 4th transistor, the 7th transistor and the 8th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor and the 6th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
40. temperature coefficient current trigger modules as claimed in claim 37, it is characterized in that, this each temperature coefficient current shot generator also comprises a zero-temperature coefficient electrical current generation unit, and this zero-temperature coefficient electrical current generation unit includes this positive temperature coefficient (PTC) current generating unit and a transistor; One gate of this transistor is coupled to this gate of the 4th transistor of this second current mirror, is used for this second negative temperature parameter current exported according to the 4th transistor, produces a negative temperature parameter current; This first positive temperature coefficient (PTC) electric current of this zero-temperature coefficient electrical current generation unit and this negative temperature parameter current, produce a zero-temperature coefficient electrical current.
41. temperature coefficient current trigger modules as claimed in claim 40, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, export one the 4th negative temperature parameter current, the 4th negative temperature parameter current equals this first negative temperature parameter current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th negative temperature parameter current exported according to the 7th transistor, exports this temperature coefficient current with negative temperature coefficient at this drain.
42. temperature coefficient current trigger modules as claimed in claim 37, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, draw one the 3rd positive temperature coefficient (PTC) electric current, the 3rd positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this first negative temperature parameter current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd positive temperature coefficient (PTC) electric current drawn according to the 7th transistor, draws this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
43. temperature coefficient current trigger modules as claimed in claim 42, it is characterized in that, this the first transistor, this transistor seconds, third transistor and the 4th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor, the 6th transistor, the 7th transistor and the 8th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
44. temperature coefficient current trigger modules as claimed in claim 37, it is characterized in that, this each temperature coefficient current shot generator also comprises a zero-temperature coefficient electrical current generation unit, and this zero-temperature coefficient electrical current generation unit includes this negative temperature parameter current generation unit and a transistor; One gate of this transistor is coupled to this gate of this transistor seconds of this first current mirror, is used for this second positive temperature coefficient (PTC) electric current exported according to this transistor seconds, produces a positive temperature coefficient (PTC) electric current; This first negative temperature parameter current of this zero-temperature coefficient electrical current generation unit and this positive temperature coefficient (PTC) electric current, produce a zero-temperature coefficient electrical current.
45. temperature coefficient current trigger modules as claimed in claim 44, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, draw one the 3rd positive temperature coefficient (PTC) electric current, the 3rd positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd positive temperature coefficient (PTC) electric current drawn according to the 7th transistor, draws this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
46. temperature coefficient current trigger modules as claimed in claim 28, it is characterized in that, this negative temperature parameter current generation unit includes a first transistor of one first current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of a transistor seconds of this first current mirror, be used for one second negative temperature parameter current exported according to this transistor seconds, produce this first negative temperature parameter current.
47. temperature coefficient current trigger modules as claimed in claim 46, it is characterized in that, this positive temperature coefficient (PTC) current generating unit includes:
One third transistor, belong to one second current mirror, include a gate, a drain and one source pole, this gate is coupled to a gate of one the 4th transistor of this second current mirror, be used for the one second positive temperature coefficient (PTC) electric current exported according to the 4th transistor, produce one the 3rd positive temperature coefficient (PTC) electric current; And
One the 3rd current mirror, includes:
One the 5th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, and this drain is coupled to this drain of this third transistor, is used for receiving the 3rd positive temperature coefficient (PTC) electric current at this drain; And
One the 6th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 5th transistor, this drain is coupled to this drain of this first transistor, be used for the 3rd positive temperature coefficient (PTC) electric current received according to the 5th transistor, draw this first positive temperature coefficient (PTC) electric current at this drain.
48. temperature coefficient current trigger modules as claimed in claim 47, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, export one the 4th positive temperature coefficient (PTC) electric current, the 4th positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this first negative temperature parameter current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th positive temperature coefficient (PTC) electric current exported according to the 7th transistor, exports this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
49. temperature coefficient current trigger modules as claimed in claim 48, it is characterized in that, this the first transistor, this transistor seconds, third transistor, the 4th transistor, the 7th transistor and the 8th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor and the 6th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
50. temperature coefficient current shot generator as claimed in claim 47, it is characterized in that, this each temperature coefficient current shot generator also comprises a zero-temperature coefficient electrical current generation unit, and this zero-temperature coefficient electrical current generation unit includes this negative temperature parameter current generation unit and a transistor; One gate of this transistor is coupled to this gate of the 4th transistor of this second current mirror, is used for this second positive temperature coefficient (PTC) electric current exported according to the 4th transistor, produces a positive temperature coefficient (PTC) electric current; This first negative temperature parameter current of this zero-temperature coefficient electrical current generation unit and this positive temperature coefficient (PTC) electric current, produce a zero-temperature coefficient electrical current.
51. temperature coefficient current shot generator as claimed in claim 50, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is greater than this trigger temperatures, export one the 4th positive temperature coefficient (PTC) electric current, the 4th positive temperature coefficient (PTC) electric current equals this first positive temperature coefficient (PTC) electric current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 4th positive temperature coefficient (PTC) electric current exported according to the 7th transistor, exports this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
52. temperature coefficient current trigger modules as claimed in claim 47, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, draw one the 3rd negative temperature parameter current, the 3rd negative temperature parameter current equals this first negative temperature parameter current and deducts this first positive temperature coefficient (PTC) electric current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd negative temperature parameter current drawn according to the 7th transistor, draws this temperature coefficient current with negative temperature coefficient at this drain.
53. temperature coefficient current trigger modules as claimed in claim 52, it is characterized in that, this the first transistor, this transistor seconds, third transistor and the 4th transistor are P type MOS (metal-oxide-semiconductor) transistor, and the 5th transistor, the 6th transistor, the 7th transistor and the 8th transistor are N-type MOS (metal-oxide-semiconductor) transistor.
54. temperature coefficient current trigger modules as claimed in claim 47, it is characterized in that, this each temperature coefficient current shot generator also comprises a zero-temperature coefficient electrical current generation unit, and this zero-temperature coefficient electrical current generation unit includes this positive temperature coefficient (PTC) current generating unit and a transistor; One gate of this transistor is coupled to this gate of this transistor seconds of this first current mirror, is used for this second negative temperature parameter current exported according to this transistor seconds, produces a negative temperature parameter current; This first positive temperature coefficient (PTC) electric current of this zero-temperature coefficient electrical current generation unit and this negative temperature parameter current, produce a zero-temperature coefficient electrical current.
55. temperature coefficient current trigger modules as claimed in claim 54, is characterized in that, this trigger element is one the 4th current mirror, includes:
One the 7th transistor, include a gate, a drain and one source pole, this gate is coupled to this drain, this drain is coupled between this drain of this first transistor and this drain of the 6th transistor, be used for when an environment temperature is less than this trigger temperatures, draw one the 3rd negative temperature parameter current, the 3rd negative temperature parameter current equals this first positive temperature coefficient (PTC) electric current and deducts this zero-temperature coefficient electrical current; And
One the 8th transistor, include a gate, a drain and one source pole, this gate is coupled to this gate of the 7th transistor, is used for the 3rd positive temperature coefficient (PTC) electric current drawn according to the 7th transistor, draws this temperature coefficient current with positive temperature coefficient (PTC) at this drain.
56. temperature coefficient current trigger modules as claimed in claim 28, is characterized in that, also include an impedance component, are used for according to this totalling temperature coefficient current, produce one and add up temperaturecoefficient voltage.
CN201110194126.3A 2011-07-12 2011-07-12 Temperature coefficient current shot generator and temperature coefficient current trigger generation module Active CN102880220B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201110194126.3A CN102880220B (en) 2011-07-12 2011-07-12 Temperature coefficient current shot generator and temperature coefficient current trigger generation module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110194126.3A CN102880220B (en) 2011-07-12 2011-07-12 Temperature coefficient current shot generator and temperature coefficient current trigger generation module

Publications (2)

Publication Number Publication Date
CN102880220A CN102880220A (en) 2013-01-16
CN102880220B true CN102880220B (en) 2016-01-06

Family

ID=47481587

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110194126.3A Active CN102880220B (en) 2011-07-12 2011-07-12 Temperature coefficient current shot generator and temperature coefficient current trigger generation module

Country Status (1)

Country Link
CN (1) CN102880220B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10290330B1 (en) 2017-12-05 2019-05-14 Xilinx, Inc. Programmable temperature coefficient analog second-order curvature compensated voltage reference
WO2019113111A1 (en) * 2017-12-05 2019-06-13 Xilinx, Inc. Programmable temperature coefficient analog second-order curvature compensated voltage reference and trim techniques for voltage reference circuits

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105207323B (en) * 2015-11-12 2018-05-08 无锡中感微电子股份有限公司 Charger with thermal conditioning circuit
CN105867511B (en) * 2016-06-29 2017-03-15 电子科技大学 A kind of Segmented temperature compensation circuit
US20190033907A1 (en) * 2017-07-25 2019-01-31 Psemi Corporation Butterfly Universal Temperature Profile
CN107492929B (en) * 2017-08-30 2019-12-27 南京中感微电子有限公司 Charging circuit provided with current protection circuit
CN107544600B (en) * 2017-09-05 2019-02-01 北京时代民芯科技有限公司 A kind of adjustable band-gap reference circuit of number
CN109684691A (en) * 2018-12-12 2019-04-26 中国电子科技集团公司第五十五研究所 A kind of microwave broadband temperature compensation attenuator
CN112162584B (en) * 2020-08-31 2022-05-20 江苏东海半导体科技有限公司 Current bias circuit with adjustable and compensable current value
CN112230703A (en) * 2020-10-30 2021-01-15 电子科技大学 High-precision band-gap reference current source based on clamping technology
CN115328259B (en) * 2022-08-12 2023-10-27 长江先进存储产业创新中心有限责任公司 Temperature processing circuit, temperature processing method and memory
CN117762181A (en) * 2022-09-16 2024-03-26 长鑫存储技术有限公司 Power supply circuit, power supply voltage providing method and memory

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497248A (en) * 2002-10-01 2004-05-19 沃福森微电子有限公司 Temp. measuring equipment and method
CN101290233A (en) * 2007-04-19 2008-10-22 上海钜胜微电子有限公司 Hall effect circuit temperature compensation method and its circuit
CN101692607A (en) * 2009-09-11 2010-04-07 西安电子科技大学 High stability clock circuit for passive high-frequency radio frequency identification chip
US20110101954A1 (en) * 2009-11-04 2011-05-05 Richtek Technology Corp. Reference signal generator and method for providing a reference signal with an adaptive temperature coefficient

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4998440B2 (en) * 2001-12-18 2012-08-15 サンケン電気株式会社 Light emitting diode drive circuit
CN101950191B (en) * 2010-09-16 2012-05-09 电子科技大学 Voltage reference source with high-order temperature compensation circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1497248A (en) * 2002-10-01 2004-05-19 沃福森微电子有限公司 Temp. measuring equipment and method
CN101290233A (en) * 2007-04-19 2008-10-22 上海钜胜微电子有限公司 Hall effect circuit temperature compensation method and its circuit
CN101692607A (en) * 2009-09-11 2010-04-07 西安电子科技大学 High stability clock circuit for passive high-frequency radio frequency identification chip
US20110101954A1 (en) * 2009-11-04 2011-05-05 Richtek Technology Corp. Reference signal generator and method for providing a reference signal with an adaptive temperature coefficient

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10290330B1 (en) 2017-12-05 2019-05-14 Xilinx, Inc. Programmable temperature coefficient analog second-order curvature compensated voltage reference
WO2019113111A1 (en) * 2017-12-05 2019-06-13 Xilinx, Inc. Programmable temperature coefficient analog second-order curvature compensated voltage reference and trim techniques for voltage reference circuits

Also Published As

Publication number Publication date
CN102880220A (en) 2013-01-16

Similar Documents

Publication Publication Date Title
CN102880220B (en) Temperature coefficient current shot generator and temperature coefficient current trigger generation module
CN100451908C (en) Temp stabilized reference voltage circuit
CN108037791B (en) A kind of band-gap reference circuit of no amplifier
CN102375468B (en) Band gap reference circuit and band gap reference current source
CN102495659B (en) Exponential temperature compensation low-temperature drift complementary metal oxide semiconductor (CMOS) band-gap reference voltage source
CN102270008B (en) Band-gap reference voltage source with wide input belt point curvature compensation
CN105974996B (en) A kind of reference voltage source
CN202394144U (en) Low temperature offset CMOS band-gap reference voltage source with index temperature compensation function
CN102323847A (en) Temperature compensation based voltage reference circuit
TW201303548A (en) Device and module of triggering and generating temperature coefficient current
CN106055002A (en) Band-gap reference circuit with low voltage output
CN105974989A (en) Low-power-consumption full-CMOS reference source circuit based on subthreshold value
CN103901937B (en) Bandgap voltage reference
CN101825912B (en) Low-temperature coefficient high-order temperature compensated band gap reference voltage source
CN108073215A (en) The reference voltage circuit of temperature-compensating
US9811106B2 (en) Reference circuit arrangement and method for generating a reference voltage
CN110989758B (en) Reference source circuit structure with high-order compensation circuit
CN103246311B (en) Non-resistor band-gap reference voltage source with high-order curvature compensation
CN109343641A (en) A kind of high-precision current reference circuit
CN101320279B (en) Current generator
CN102809979B (en) Third-order compensation band-gap reference voltage source
CN101999106A (en) Band gap reference voltage generator
GB2598742A (en) Low noise reference circuit
Dey et al. A CMOS bandgap reference with high PSRR and improved temperature stability for system-on-chip applications
CN203950228U (en) Current source circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant