CN109343641A - A kind of high-precision current reference circuit - Google Patents
A kind of high-precision current reference circuit Download PDFInfo
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- CN109343641A CN109343641A CN201811408654.2A CN201811408654A CN109343641A CN 109343641 A CN109343641 A CN 109343641A CN 201811408654 A CN201811408654 A CN 201811408654A CN 109343641 A CN109343641 A CN 109343641A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention provides a kind of high-precision current reference circuit, including multiple metal-oxide-semiconductors, polysilicon resistance R1 and R0, PNP triode Q1 and Q2 etc., wherein Q2 and R0 is in parallel, Q1 and R1 is in parallel, this triode form in parallel with polysilicon resistance is exactly the core architecture of the circuit, NM2 and NM3, NM0 and NM1 respectively constitute current mirror, superimposed current of the bias current of current mirror from triode and polysilicon resistance, finally by PM7 and PM8, the current mirror that PM4 and PM5 are respectively constituted exports to obtain the electric current of a positive temperature coefficient electric current and a negative temperature coefficient, a temperature independent reference current Iref is obtained after being overlapped mutually.The present invention is simple relative to general classical current reference circuit structure, has more good temperature coefficient, reduces circuit cost and use cost.
Description
Technical field
The present invention relates to technical field of integrated circuits, and in particular to a kind of high-precision current reference circuit.
Background technique
Due to constantly bringing forth new ideas for integrated circuit industry, in numerical model analysis or Analogous Integrated Electronic Circuits, inside chip
A reference source has been a hot spot of research, and other than the very high voltage-reference of frequency of use, current reference has also been obtained increasingly
Widely pay attention to and applies.Especially providing bias current for other circuit modules, for example, operational amplifier, oscillator and
It is most of to use electric current as benchmark in the related analog circuit such as high-precision a/d converter.Want optimization common circuit
Performance, the requirement to reference current is more and more harsher, so creation one and power supply and production technology are substantially not related, simultaneously
And the current reference for having excellent temperature characterisitic just seems particularly critical, current current reference framework is complicated, general to export
Amplifier is required as buffering, not only designs trouble, biggish chip area is also taken up, so how to complete structure
Simply, precision height and the current reference of good temp characteristic become the research emphasis of this project.
It is a typical current reference circuit as shown in Figure 1, in the design of the current reference of traditional integrated circuit
Cheng Dangzhong is typically converted to the reference current of our needs, the energy from figure by means of the voltage reference circuit of previous stage
It enough finds out, Vref is the bandgap voltage reference generated, has excellent temperature characterisitic, is being input to operational amplifier just
Xiang Duan, operational amplifier play buffer, and M3 and amplifier form negative-feedback and constitute voltage-current converter circuit,
Due to the effect of amplifier, make
Vref=V1
So the electric current of M1 branch is
Reference voltage is converted into reference current, M1 and M2 constitute current mirror, obtained reference current exported
To the functional module of needs.But although the higher reference current of power supply rejection ratio can be obtained using reference voltage, by technique, temperature
Degree influences lower current reference.But the characteristic of the temperature of presence and resistance R1 due to amplifier influences, we
Say that the circuit has input imbalance, precision is not special height, and the structure of amplifier designs complexity, is occupied
The problems such as area of domain is big, and since the requirement of actual items is higher and higher, high-precision is simplified, the circuit that performance is good
Construction just seems very crucial.So just proposing a kind of Novel resistor that can be completed under CMOS technology in the application
Compensate current reference circuit.
Summary of the invention
In view of this, the problem to be solved in the present invention is to provide a kind of high-precision current reference circuits.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of high-precision current reference circuit, packet
Include PM1, PM2, PM3, PM4, PM5, PM6, PM7, PM8, NM0, NM1, NM2, NM3, R1, R0, Q1 and Q2, it is the PM1, described
PM2, the PM3, the PM4, the PM5, the PM6, the PM7 and the PM8 are PMOS tube, the NM0, described
NM1, the NM2 and the NM3 are NMOS tube, and the R1 and the R0 are polysilicon resistance, and the Q1 and the Q2 are equal
For the triode of positive-negative-positive；
The source electrode of the PM2 meets power vd D, and the drain electrode of the PM2 connects the input terminal of current reference, the grid of the PM2
Connect the grid of the PM1 and the grid of the PM3；The PM2 and PM1 constitutes current mirror, the source electrode connection of the PM1
The drain electrode of the PM3, the drain electrode of the PM1 connect the emitter of the Q1, are connected between the emitter and base stage of the Q1
The R1, the grounded collector of the Q1, the base stage of the Q1 is also connected with the grid of the NM2 and the grid of the NM3, described
The NM2 and NM3 constitutes current mirror, the grid of the NM2 and its drain interconnection, the source electrode of the source electrode of the NM2 and the NM3
Ground connection, the drain electrode of the NM3 connect the grid of the PM4 and the grid of PM5, and the PM4 and PM5 constitute current mirror, the PM4
Grid and its drain interconnection, the source electrode of the source electrode of the PM4 and the PM5 meet VDD, described in the drain electrode connection of the PM5
The drain electrode of PM8；
The source electrode of the PM6 meets power vd D, and the drain electrode of the PM6 connects the emitter of the Q2, the emitter of the Q2
It is connected with the R0 between base stage, the grounded collector of the Q2, the grid of the PM6 connects the NM3 drain electrode and described
The drain electrode of PM4, the base stage of the Q2 are also connected with the grid of the NM1 and the grid of the NM0, the source electrode of the NM1 and described
The source electrode of NMO is grounded, and the NM1 and NM0 constitute current mirror, the grid of the NM1 and its drain interconnection, the drain electrode of the NMO
The grid of the PM7 and the M8 are connected, the PM7 and PM8 constitute current mirror, the grid of the PM7 and its drain interconnection, institute
The source electrode for stating PM7 meets power vd D, and the source electrode of the PM8 meets power vd D, and the drain electrode of the PM8 and the drain electrode of the PM5 are common
Outputting reference electric current Iref.
Preferably, the dimension scale of the PM1 and PM2 is 3:2.
Preferably, the resistance value of the R0 and R1 is identical, is arranged between 300K-400K.
Preferably, the ratio of the emitter area of the Q2 and Q1 is 1:1.
Preferably, the dimension scale of the PM6 and PM4 is 2:1.
The advantages and positive effects of the present invention are: being constructed by way of in parallel with polysilicon resistance using triode
Circuit, NM2, NM3, NM0 and NM1 respectively constitute current mirror, and the bias current of current mirror is from triode and polysilicon resistance
Superimposed current, finally exported to obtain a positive temperature coefficient electric current by the current mirror that PM7 and PM8, PM4 and PM5 are respectively constituted
With the electric current of a negative temperature coefficient, a temperature independent reference current Iref is obtained after being overlapped mutually；The present invention is opposite
Structure is simple for general classical current reference circuit, has more good temperature coefficient, reduce circuit cost with
And use cost.
Detailed description of the invention
Fig. 1 is a kind of typical current reference circuit schematic diagram described in background technique；
Fig. 2 is a kind of current reference circuit schematic diagram of the prior art；
Fig. 3 is a kind of circuit diagram of the specific embodiment of high-precision current reference circuit of the invention.
Specific embodiment
In order to better understand the present invention, the present invention is further retouched with attached drawing combined with specific embodiments below
It states.
As shown in Figure 1 to Figure 3, the present invention provides a kind of high-precision current reference circuit, including PM1, PM2, PM3,
PM4, PM5, PM6, PM7, PM8, NM0, NM1, NM2, NM3, R1, R0, Q1 and Q2, it is the PM1, the PM2, the PM3, described
PM4, the PM5, the PM6, the PM7 and the PM8 are PMOS tube, the NM0, the NM1, the NM2 and described
NM3 is NMOS tube, and the R1 and the R0 are polysilicon resistance, and the Q1 and the Q2 are the triode of positive-negative-positive；
The source electrode of the PM2 meets power vd D, and the drain electrode of the PM2 connects the input terminal of current reference, the grid of the PM2
Connect the grid of the PM1 and the grid of the PM3；The PM2 and PM1 constitutes current mirror, the source electrode connection of the PM1
The drain electrode of the PM3, the drain electrode of the PM1 connect the emitter of the Q1, are connected between the emitter and base stage of the Q1
The R1, the grounded collector of the Q1, the base stage of the Q1 is also connected with the grid of the NM2 and the grid of the NM3, described
The NM2 and NM3 constitutes current mirror, the grid of the NM2 and its drain interconnection, the source electrode of the source electrode of the NM2 and the NM3
Ground connection, the drain electrode of the NM3 connect the grid of the PM4 and the grid of PM5, and the PM4 and PM5 constitute current mirror, the PM4
Grid and its drain interconnection, the source electrode of the source electrode of the PM4 and the PM5 meet VDD, described in the drain electrode connection of the PM5
The drain electrode of PM8；
The source electrode of the PM6 meets power vd D, and the drain electrode of the PM6 connects the emitter of the Q2, the emitter of the Q2
It is connected with the R0 between base stage, the grounded collector of the Q2, the grid of the PM6 connects the NM3 drain electrode and described
The drain electrode of PM4, the base stage of the Q2 are also connected with the grid of the NM1 and the grid of the NM0, the source electrode of the NM1 and described
The source electrode of NMO is grounded, and the NM1 and NM0 constitute current mirror, the grid of the NM1 and its drain interconnection, the drain electrode of the NMO
The grid of the PM7 and the M8 are connected, the PM7 and PM8 constitute current mirror, the grid of the PM7 and its drain interconnection, institute
The source electrode for stating PM7 meets power vd D, and the source electrode of the PM8 meets power vd D, and the drain electrode of the PM8 and the drain electrode of the PM5 are common
Outputting reference electric current Iref。
Further, the dimension scale of the PM1 and PM2 is 3:2.
Further, the resistance value of the R0 and R1 is identical, is arranged between 300K-400K.
Further, the ratio of the emitter area of the Q2 and Q1 is 1:1.
Further, the dimension scale of the PM6 and PM4 is 2:1.
Fig. 2 generates reference current using the principle of Positive and Negative Coefficient Temperature superposition, and left-half generates a positive temperature coefficient
Electric current I1, give Q3 to provide collector current by current mirror MP3 replica current, while Q5 provides bias current, R2 two for R2
The pressure drop at end is UBE, and R2 has positive temperature coefficient, so generating the electric current of a negative temperature coefficient.Leakage of two kinds of electric currents in MN1
Complete superposition in pole.Eventually pass through MN2 duplication output.
It is a kind of high-precision current reference circuit provided by the invention as shown in Figure 3, main components include multiple MOS
Pipe, polysilicon resistance R1 and R0, positive-negative-positive triode Q1 and Q2, wherein Q2 and R0 are in parallel, and Q1 and R1 are in parallel, this triode
The form in parallel with polysilicon resistance is exactly the core architecture of the circuit, and NM2, NM3, NM0 and NM1 respectively constitute current mirror, electric
Superimposed current of the bias current from triode and polysilicon resistance for flowing mirror, is finally distinguished by PM7 and PM8, PM4 and PM5
The current mirror of composition exports to obtain the electric current of a positive temperature coefficient electric current and a negative temperature coefficient, obtains one after being overlapped mutually
A temperature independent reference current Iref.
Iref=nID5+mID8
Want to obtain the very low reference current source of temperature drift, specific measures for implementation are the height provided by band-gap reference
For the PTAT of precision as the input of current reference, the dimension scale of setting PM1 and PM2 pipe is 3:2, is constituted by PM1 and PM2
The big electric current of curent change range ratio PTAT is obtained after current mirror, the negative temperature coefficient after convenience is offset, and electric current is passed through
PTAT is mirrored to PM1 branch by mirror, by the parallel circuit that triode Q1 and resistance R1 is formed, since resistance R1 is polysilicon electricity
It hinders and there is negative temperature coefficient, the pressure drop between the emitter and ground level of Q1 is
With negative temperature coefficient, wherein the electric current of R0 and Q1 branch is respectively as follows:
IE≈IC
NM1 drain current is the sum of two branch currents:
They are all functions related with temperature, but since first item has negative temperature coefficient, Section 2 has positive temperature
Spend coefficient, be arranged resistance R1 value between 300K-400K, will partial offset input positive temperature coefficient electric current, obtain
The electric current of one small positive temperature coefficient of variation range compared to before, obtains after the mirror image of current mirror NM2, NM3 and PM4
The small electric current of obtained variation range is mirrored to PM6 branch by PM4 by the small ID5 of one variation range, same principle
Road, in order to guarantee that by negative temperature characteristic is presented after Q2 and R0, the size of PM6 and PM4 is arranged in PM6 branch electric current obtained
Ratio is 2:1, and it is to obtain subzero temperature after secondary counteracting that generating PM6 branch, variation range is small but electric current that current value is big
Spend the electric current of coefficient.The electric current of the small negative temperature coefficient of variation range, warp can be obtained after the counteracting of Q2 and R0 in this way
It crosses NM1, NM0, PM7, PM8 mirror image and obtains the electric current ID8 an of negative temperature coefficient later, finally obtain a high-precision benchmark
Electric current Iref, so, in this application, in order to be mutually matched core circuit, the ratio of setting Q2 and Q1 is 1；1, R0 and R1's
It is worth equal, control range is between 300K-400K.When temperature change, the Positive and Negative Coefficient Temperature that just can ensure that is electric
Flow with uniformity, final output one is not with the reference current of temperature and mains voltage variations.
In conjunction with the present invention from the point of view of Fig. 2 and Fig. 3 compared with the existing technology with the difference in terms of following four: firstly, the two
Compensation principle it is different, according to fig. 2 it can be seen that the prior art is that the Positive and Negative Coefficient Temperature electric current utilized is superimposed to generate
Reference current is directly superimposed by positive temperature coefficient electric current and negative temperature parameter current, and the present invention utilizes twice just as seen from Figure 3
Negative temperature parameter current compensates to generate reference current, and specifically the first step reduces positive temperature system using negative temperature parameter current
The range that number electric current varies with temperature, then mirror image exports, and second step is using negative temperature parameter current to obtained positive temperature system
Number electric current carries out second compensation and obtains the electric current of new negative temperature coefficient, and output electric current twice is sought in final mirror image output
With obtain reference current.
Secondly compared with prior art, the present invention the two negative temperature parameter current production principle is different: Fig. 2 uses NPN tri-
Pole pipe and P-type ion injection resistance (have positive temperature coefficient) generate negative temperature parameter current, and Fig. 3 using PNP triode and
High level polysilicon resistance (having negative temperature coefficient) generates negative temperature parameter current.
Further more, the two is different for the mode that compensation circuit provides biasing: Fig. 2 provides biasing using PTAT for Q3, utilizes Q5
Biasing is provided for R2；However PTAT is utilized in the present invention as seen from Figure 3 provides biasing for Q1 and R1, while providing partially for Q2 and R0
It sets.
Both last Positive and Negative Coefficient Temperature electric current principle of stacking is different: Fig. 2 is generated by the emitter current and R2 of Q3
Negative temperature parameter current superposition, however the present invention be as seen from Figure 3 by Q1 base current and R1 generate negative temperature
Coefficient current superposition.
The working principle of the invention and the course of work are as follows: generating reference current, PTAT electricity using the principle of electric current summation
Stream provided by band-gap reference, the PTAT current obtained after PM1, PM2, PM3 mirror image processing as Q1 emitter current with
And the bias current of R1, after the negative temperature parameter current generator being made of Q1 and R1, drain terminal of the two in MN2 carries out the
Primary superposition.Compensated positive temperature coefficient current mirror biasing is obtained, first is that being used to export summation, two are intended for two
The input current of secondary compensation.After the negative temperature parameter current generator of Q2 and R0 composition, negative temperature system is obtained after compensation
Several electric currents, mirror image output.Both final electric current that carries out sums to obtain reference current.
The embodiments of the present invention have been described in detail above, but content is only the preferred embodiment of the present invention,
It should not be considered as limiting the scope of the invention.All changes and improvements made in accordance with the scope of the present invention, should all
It still belongs within this patent covering scope.
Claims (5)
1. a kind of high-precision current reference circuit, it is characterised in that: including PM1, PM2, PM3, PM4, PM5, PM6, PM7,
PM8, NM0, NM1, NM2, NM3, R1, R0, Q1 and Q2, it is the PM1, the PM2, the PM3, the PM4, the PM5, described
PM6, the PM7 and the PM8 are PMOS tube, and the NM0, the NM1, the NM2 and the NM3 are NMOS tube, institute
Stating R1 and the R0 is polysilicon resistance, and the Q1 and the Q2 are the triode of positive-negative-positive；
The source electrode of the PM2 meets power vd D, and the drain electrode of the PM2 connects the input terminal of current reference, the grid connection of the PM2
The grid of the grid of the PM1 and the PM3；The PM2 and the PM1 constitute current mirror, described in the source electrode connection of the PM1
The drain electrode of PM3, the drain electrode of the PM1 connect the emitter of the Q1, are connected between the emitter and base stage of the Q1 described
R1, the grounded collector of the Q1, the base stage of the Q1 are also connected with the grid of the NM2 and the grid of the NM3, the NM2
Current mirror is constituted with the NM3, and the source electrode of the grid of the NM2 and its drain interconnection, the source electrode of the NM2 and the NM3 connects
Ground, the drain electrode of the NM3 connect the grid of the PM4 and the grid of PM5, and the PM4 and PM5 constitute current mirror, the PM4's
The source electrode of grid and its drain interconnection, the source electrode of the PM4 and the PM5 meet VDD, and the drain electrode of the PM5 connects the PM8
Drain electrode；
The source electrode of the PM6 meets power vd D, and the drain electrode of the PM6 connects the emitter of the Q2, the emitter and base of the Q2
The R0, the grounded collector of the Q2 are connected between pole, the grid of the PM6 connects the NM3 drain electrode with the PM4's
Drain electrode, the base stage of the Q2 are also connected with the grid of the NM1 and the grid of the NM0, the source electrode of the NM1 and the NMO's
Source electrode ground connection, the NM1 and NM0 constitute current mirror, the grid of the NM1 and its drain interconnection, and the drain electrode of the NMO connects institute
The grid of PM7 and the M8 are stated, the PM7 and PM8 constitute current mirror, the grid of the PM7 and its drain interconnection, the PM7
Source electrode meet power vd D, the source electrode of the PM8 meets power vd D, and the drain electrode of the PM8 and the drain electrode of the PM5 export base jointly
Quasi- electric current Iref.
2. a kind of high-precision current reference circuit according to claim 1, it is characterised in that: the ruler of the PM1 and PM2
Very little ratio is 3:2.
3. a kind of high-precision current reference circuit according to claim 1, it is characterised in that: the resistance value of the R0 and R1
It is identical, it is arranged between 300K-400K.
4. a kind of high-precision current reference circuit according to claim 1, it is characterised in that: the transmitting of the Q2 and Q1
The ratio of pole-face product is 1:1.
5. a kind of high-precision current reference circuit according to claim 1, it is characterised in that: the ruler of the PM6 and PM4
Very little ratio is 2:1.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811408654.2A CN109343641B (en) | 2018-11-23 | 2018-11-23 | High-precision current reference circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811408654.2A CN109343641B (en) | 2018-11-23 | 2018-11-23 | High-precision current reference circuit |
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| CN109343641A true CN109343641A (en) | 2019-02-15 |
| CN109343641B CN109343641B (en) | 2023-09-22 |
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Cited By (3)
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| CN111277234A (en) * | 2020-04-10 | 2020-06-12 | 重庆百瑞互联电子技术有限公司 | Power amplifier |
| CN111949063A (en) * | 2020-08-10 | 2020-11-17 | 上海川土微电子有限公司 | Band-gap reference voltage source with low temperature drift |
| CN115855289A (en) * | 2023-02-14 | 2023-03-28 | 晶艺半导体有限公司 | Temperature detection module and over-temperature protection circuit |
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| CN115855289A (en) * | 2023-02-14 | 2023-03-28 | 晶艺半导体有限公司 | Temperature detection module and over-temperature protection circuit |
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| Publication number | Publication date |
|---|---|
| CN109343641B (en) | 2023-09-22 |
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