CN111949063A - Band-gap reference voltage source with low temperature drift - Google Patents
Band-gap reference voltage source with low temperature drift Download PDFInfo
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- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention provides a low-temperature-drift band-gap reference voltage source which comprises a Brokaw structure band-gap reference circuit, wherein the Brokaw structure band-gap reference circuit comprises a Q1、Q2、R1、R2And an operational amplifier A. The Brokaw structure band-gap reference circuit also comprises PM1、PM2，PM1Gate and PM of2Is electrically connected to the output of the operational amplifier A, PM1Source electrode and PM2Is electrically connected to the source electrode of, PM1Drain of (1) and negative terminal of operational amplifier A and Q1Is electrically connected. PM (particulate matter)2Drain electrode of and Q2Is electrically connected to the positive terminal of the operational amplifier a. The band-gap reference voltage source further comprises a high-order compensation circuit, and the high-order compensation circuit comprises a Q3、NM1、NM2、R3、ICTATA current source. The band-gap reference voltage source with low temperature drift can ensure that the temperature coefficient of the band-gap reference voltage source is less than 3 ppm/DEG C.
Description
Technical Field
The invention relates to the technical field of integrated circuit design, in particular to a low-temperature-drift band-gap reference voltage source.
Background
The most common voltage reference source used in the industry at present is a bandgap reference voltage source, which has high precision and stability, does not change with the changes of power supply voltage, temperature, semiconductor process, etc., plays an extremely important role in integrated circuit design, and is widely applied to various chips such as DAC, ADC, sensor chip, detection chip, power management, etc.
A conventional bandgap reference voltage source provides a reference voltage for other modules within an integrated circuit, such as a transistor Q shown in FIG. 12Base electrode ofVoltage between emitters (V)BE2) Having a negative temperature characteristic, flowing through R1BAnd R2Current of (I)PTAT2Having a positive temperature coefficient characteristic, VBG＝VBE2+(1+R1/R2)VTln(N)，VTkT/q is a thermal voltage with a positive temperature coefficient, where k is the boltzmann constant, q is the amount of electronic charge, and T is the absolute temperature; n is Q2And Q1The base area ratio of (a). Due to VBE2Having a negative temperature coefficient, VTHas a positive temperature coefficient, so when (1+ R)1/R2) When the values of ln (N) are appropriate, V can be convertedBE2And (1+ R)1/R2)VTThe positive and negative temperature coefficients of ln (N) are cancelled out to obtain a reference voltage V independent of temperatureBG. Albeit VTHas a strict first-order linear temperature coefficient, but VBE2The temperature coefficient of (a) is not strictly first-order linear, but has other high-order terms related to temperature, so that the temperature coefficient of the band gap reference voltage source with the traditional structure is difficult to be below 10 ppm/DEG C.
As shown in fig. 2, in order to improve the temperature coefficient of the bandgap reference, a bandgap reference circuit with high-order temperature compensation is proposed, and compared with the conventional structure, a transistor Q is added3Resistance R5AResistance R5BAnd a temperature-independent current ITIThrough R5AAnd R5BThe current is used for temperature high-order compensation, and the temperature coefficient of the reference voltage source can be below 5 ppm/DEG C after the high-order compensation.
However, for high-precision analog circuits such as ADCs, a high-precision voltage reference source with a temperature coefficient of less than 3 ppm/degree centigrade is required, and the high-precision analog circuits such as ADCs can be guaranteed to normally operate under the voltage reference source.
Therefore, it is desirable to improve the bandgap reference voltage source to have a temperature coefficient of less than 3 ppm/deg.C.
Disclosure of Invention
The invention aims to provide a low-temperature-drift band-gap reference voltage source which is improved on the basis of the existing band-gap reference voltage source, provides a novel high-order temperature compensation structure, can enable the temperature coefficient of the band-gap reference voltage source to be less than 3 ppm/DEG C, and provides a high-precision voltage reference source for high-precision analog circuits such as an ADC (analog to digital converter).
The technical scheme for realizing the purpose of the invention is as follows: a low-temperature-drift band-gap reference voltage source comprises a Brokaw structure band-gap reference circuit, wherein the Brokaw structure band-gap reference circuit comprises a Q1、Q2、R1、R2And an operational amplifier A. The Brokaw structure band-gap reference circuit also comprises PM1、PM2，PM1Gate and PM of2Is electrically connected to the output of the operational amplifier A, PM1Source electrode and PM2Is electrically connected to the source electrode of, PM1Drain of (1) and negative terminal of operational amplifier A and Q1Is electrically connected. PM (particulate matter)2Drain electrode of and Q2Is electrically connected to the positive terminal of the operational amplifier a.
The band-gap reference voltage source further comprises a high-order compensation circuit, and the high-order compensation circuit comprises a Q3、NM1、NM2、R3、ICTATA current source, a high-order compensation circuit for compensating a temperature-dependent high-order voltage term in the bandgap reference, i.e. counteracting the following expression VBG＝VBE2+(1+R1/R2)VTIn ln (N) Q2Base and emitter voltages VBE2The high order terms related to temperature contained in (1).
The invention designs a novel band-gap reference voltage source with low temperature drift, can enable the temperature coefficient of the band-gap reference voltage source to be less than 3 ppm/DEG C by providing a novel high-order temperature compensation structure, and can provide a high-precision voltage reference source for high-precision analog circuits such as an ADC (analog to digital converter).
Further, in the high-order compensation circuit, Q3Base and Q of2Is electrically connected to the base electrode, Q3Collector and NM of3Is electrically connected to the source electrode of, Q3Emitter and R3And NM2Is electrically connected to the drain electrode of, and R3Another end of (1) and Q2Is electrically connected.
NM2And NM1Is grounded, NM2Gate and NM of1Is electrically connected to the gate electrode of (NM)2Drain of (1) andCTATa current source is electrically connected, andCTATthe current source is electrically connected with the output end of the reference voltage source.
Further, NM1And the drain of (1) is also connected with NM2Is electrically connected to the gate electrode of (NM)2Being able to replicate streaming NM1Is inversely related to temperature ICTATCurrent is forced to flow through Q3。
Further, the band-gap reference voltage source further comprises NM3，NM3And the circuit is positioned between the Brokaw structure band-gap reference circuit and the high-order compensation circuit. NM3Gate and PM of2Is electrically connected to the drain electrode of (NM)3Drain electrode of (2) and PM2Is electrically connected to the source electrode of NM3Source and Q of1Base electrode, Q2Base, power supply output terminal of, NM3Forming an output voltage V forming the output of the power supplyBGThe source follower driving circuit of (1).
Further, the output voltage V of the power supply output endBGIs expressed as VBG＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTln (N), wherein Vbg0For a band gap voltage at an absolute temperature of-273 deg.C, T0Is a reference temperature, VBE2,0Is Q2At T0V at temperatureBEValue of voltage, VTkT/Q is a thermal voltage with a positive temperature coefficient, k is the boltzmann constant, T is the absolute temperature, Q is the amount of electron charge, and N is Q2And Q1The base area ratio of (a).
In the above formula, - (V)bg0-VBE0)T/T0+(2R2/R1)VTThe first order terms in ln (N) with respect to temperature cancel each other out, so that VBG＝Vbg0In the formula, no temperature-dependent quantities are contained, so that VBGIndependent of temperature.
The working principle of the band-gap reference voltage source with low temperature drift is as follows:
normally a triode Q (Q)1、Q2、Q3) Has a voltage of V at the collectorBEOf which VBEThe expression of (a) is: vBE＝Vbg0-(Vbg0-VBE0)T/T0-(η-α)VTln(T/T0) In which V isbg0For a band gap voltage at an absolute temperature of-273 deg.C, T0Is a reference temperature, VBE0Is at T0V at temperatureBEThe voltage value, η, is a process-related constant, typically 4; α is a temperature coefficient of a current flowing through the collector of the transistor Q, and is 0 when a current that is independent of temperature flows, 1 when a current that is linearly dependent on temperature flows, and-1 when a current that is linearly dependent on temperature flows.
1. Due to the flow of Q2Is positively linearly related to temperature, and thus, VBE2The expression of (a) is: vBE2＝Vbg0-(Vbg0-VBE2,0)T/T0-(η-1)VTln(T/T0) Wherein (eta-1) VTln(T/T0) For higher order terms related to temperature, it will be eliminated in the present invention in the following manner.
2. Due to the flow of Q3Is negatively linearly dependent on temperature, and thus, VBE3The expression of (a) is: vBE3＝Vbg0-(Vbg0-VBE3,0)T/T0-(η+1)VTln(T/T0)。
3.VBE2-VBE3＝(VBE2,0-VBE3,0)T/T0+2VTln(T/T0) At T0Taking V at temperatureBE2,0＝VBE3,0Then V isBE2-VBE3＝2VTln(T/T0) Thus obtaining VBEThe high order term of temperature.
4.R3A pressure difference of V between both endsBE2-VBE3＝2VTln(T/T0) Thus, R3Current of (I)3＝(2VT/R3)ln(T/T0)，R3Current of (I)3At R2Voltage generated at V2＝(2VTR2/R3)ln(T/T0) In the present invention, only V is required2＝(η-1)VTln(T/T0) Can be eliminated at VBE2And η is 4, so that R is higher than the temperature coefficient of the high order2/R3The ratio of the total amount of the components is 1.5.
In summary, VBG＝VBE2+(2R2/R1)VTln(N)+(2VTR2/R3)ln(T/T0)
＝Vbg0-(Vbg0-VBE2,0)T/T0-3VTln(T/T0)+(2R2/R1)VTln(N)+3VTln(T/T0)
＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTln(N)
＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTln, (n) in which the high order terms related to temperature are not included.
Compared with the prior art, the invention has the beneficial effects that: the band-gap reference voltage source with low temperature drift provides a novel high-order temperature compensation structure, can enable the temperature coefficient of the band-gap reference voltage source to be less than 3 ppm/DEG C, and provides a high-precision voltage reference source for high-precision analog circuits such as ADC (analog to digital converter).
Drawings
In order to more clearly illustrate the technical solution of the embodiment of the present invention, the drawings used in the description of the embodiment will be briefly introduced below. It should be apparent that the drawings in the following description are only for illustrating the embodiments of the present invention or technical solutions in the prior art more clearly, and that other drawings can be obtained by those skilled in the art without any inventive work.
FIG. 1 is a circuit diagram of a conventional bandgap reference voltage source;
FIG. 2 is a prior art bandgap reference circuit with high order temperature compensation;
FIG. 3 is a circuit diagram of a bandgap reference voltage source with low temperature drift according to the present invention.
Detailed Description
The invention will be further described with reference to specific embodiments, and the advantages and features of the invention will become apparent as the description proceeds. These examples are illustrative only and do not limit the scope of the present invention in any way. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention, and that such changes and modifications may be made without departing from the spirit and scope of the invention.
In the description of the present embodiments, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," "third," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicit to a number of indicated technical features. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the invention, the meaning of "a plurality" is two or more unless otherwise specified.
Example 1:
in this embodiment, the low-temperature-drift bandgap reference voltage source includes a Brokaw-structure bandgap reference circuit and a high-order compensation circuit.
In which, as shown in figure 3,the Brokaw structure band-gap reference circuit comprises a Q1、Q2、R1、R2And an operational amplifier A. The Brokaw structure band-gap reference circuit also comprises PM1、PM2。
Specifically, as shown in FIG. 3, PM1Gate and PM of2Is electrically connected to the output of the operational amplifier A, PM1Source electrode and PM2Is electrically connected to the source electrode of, PM1Drain of (1) and negative terminal of operational amplifier A and Q1Is electrically connected. PM (particulate matter)2Drain electrode of and Q2Is electrically connected to the positive terminal of the operational amplifier a. Q1Base and Q of2Is electrically connected to the base electrode, Q1Emitter and R1Is connected to one end of R1Another end of (1) and R2And Q2Is electrically connected to the emitter, and R2And the other end of the same is grounded.
Wherein the high order compensation circuit comprises Q, as shown in FIG. 33、NM1、NM2、R3、ICTATA current source, a higher order compensation circuit for compensating a higher order temperature-dependent voltage term in the bandgap reference, i.e. the counteracting expression VBG＝VBE2+(1+R1/R2)VTIn ln (N) Q2Base emitter voltage VBE2The high order terms related to temperature contained in (1).
Specifically, as shown in FIG. 3, in the high-order compensation circuit, Q3Base and Q of2Is electrically connected to the base electrode, Q3Collector and NM of3Is electrically connected to the source electrode of, Q3Emitter and R3And NM2Is electrically connected to the drain electrode of, and R3Another end of (1) and Q2Is electrically connected. NM2And NM1Is grounded, NM2Gate and NM of1Is electrically connected to the gate electrode of (NM)2Drain of (1) andCTATa current source is electrically connected, andCTATthe current source is electrically connected with the output end of the reference voltage source.
Further, in the high-order compensation circuit, NM1Is also connected with NM2Is electrically connected to the gate electrode of (NM)2Can be used forReplicating streaming NM1Is inversely related to temperature ICTATCurrent is forced to flow through Q3。
Wherein, as shown in FIG. 3, the band-gap reference voltage source further comprises NM3，NM3And the circuit is positioned between the Brokaw structure band-gap reference circuit and the high-order compensation circuit. NM3Gate and PM of2Is electrically connected to the drain electrode of (NM)3Drain electrode of (2) and PM2Is electrically connected to the source electrode of NM3Source and Q of1Base electrode, Q2Base, power supply output terminal of, NM3Forming an output voltage V forming the output of the power supplyBGThe source follower driving circuit of (1).
Further, the output voltage V of the power supply output endBGIs expressed as VBG＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTln (N), wherein Vbg0For a band gap voltage at an absolute temperature of-273 deg.C, T0Is a reference temperature, VBE2,0Is Q2At T0V at temperatureBEValue of voltage, VTkT/Q is a thermal voltage with a positive temperature coefficient, k is the boltzmann constant, T is the absolute temperature, Q is the amount of electron charge, and N is Q2And Q1The base area ratio of (a).
In the above formula, - (V)bg0-VBE0)T/T0+(2R2/R1)VTThe first order terms in ln (N) with respect to temperature cancel each other out, so that VBG＝Vbg0In the formula, no temperature-dependent quantities are contained, so that VBGIndependent of temperature.
The working principle of the band-gap reference voltage source with the low temperature drift is as follows:
normally a triode Q (Q)1、Q2Q3) has a voltage of VBEOf which VBEThe expression of (a) is: vBE＝Vbg0-(Vbg0-VBE0)T/T0-(η-α)VTln(T/T0) In which V isbg0For a band gap voltage at an absolute temperature of-273 deg.C, T0Is a reference temperature，VBE0Is at T0V at temperatureBEThe voltage value, η, is a process-related constant, typically 4; α is a temperature coefficient of a current flowing through the collector of the transistor Q, and is 0 when a current that is independent of temperature flows, 1 when a current that is linearly dependent on temperature flows, and-1 when a current that is linearly dependent on temperature flows.
1. Due to the flow of Q2Is positively linearly related to temperature, and thus, VBE2The expression of (a) is: vBE2＝Vbg0-(Vbg0-VBE2,0)T/T0-(η-1)VTln(T/T0) Wherein (eta-1) VTln(T/T0) For higher order terms related to temperature, it will be eliminated in the present invention in the following manner.
2. Due to the flow of Q3Is negatively linearly dependent on temperature, and thus, VBE3The expression of (a) is: vBE3＝Vbg0-(Vbg0-VBE3,0)T/T0-(η+1)VTln(T/T0)。
3.VBE2-VBE3＝(VBE2,0-VBE3,0)T/T0+2VTln(T/T0) At T0Taking V at temperatureBE2,0＝VBE3,0Then V isBE2-VBE3＝2VTln(T/T0) Thus obtaining VBEThe high order term of temperature.
4.R3A pressure difference of V between both endsBE2-VBE3＝2VTln(T/T0) Thus, R3Current of (I)3＝(2VT/R3)ln(T/T0)，R3Current of (I)3At R2Voltage generated at V2＝(2VTR2/R3)ln(T/T0) In the present invention, only V is required2＝(η-1)VTln(T/T0) Can be eliminated at VBE2And η is 4, so that R is higher than the temperature coefficient of the high order2/R3The ratio of the total amount of the components is 1.5.
In summary, VBG＝VBE2+(2R2/R1)VTln(N)+(2VTR2/R3)ln(T/T0)
＝Vbg0-(Vbg0-VBE2,0)T/T0-3VTln(T/T0)+(2R2/R1)VTln(N)+3VTln(T/T0)
＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTln(N)
＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTln, (n) in which the high order terms related to temperature are not included.
According to the band-gap reference voltage source with the low temperature drift, a novel high-order temperature compensation structure is provided, so that the temperature coefficient of the band-gap reference voltage source is smaller than 3 ppm/DEG C, and a high-precision voltage reference source can be provided for high-precision analog circuits such as an ADC (analog to digital converter).
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (5)
1. A low-temperature-drift band-gap reference voltage source comprises a Brokaw structure band-gap reference circuit, wherein the Brokaw structure band-gap reference circuit comprises a Q1、Q2、R1、R2And an operational amplifier A, characterized in that: the Brokaw structure band-gap reference circuit also comprises PM1、PM2Said PM being1And the PM2Is electrically connected to the output terminal of the operational amplifier A, the PM1Source electrode of (2) and the PM2The PM of1With the negative terminal of the operational amplifier a and the Q1The collector electrode of (1) is electrically connected; the PM2And the drain of (1) and the Q2The collector of the operational amplifier A is electrically connected with the positive terminal of the operational amplifier A;
the band-gap reference voltage source further comprises a high-order compensation circuit comprising Q3、NM1、NM2、R3、ICTATA current source, the higher order compensation circuit to compensate for a temperature dependent higher order voltage term in the bandgap reference.
2. The low-temperature-drift bandgap reference voltage source according to claim 1, wherein: in the high-order compensation circuit, the Q3Base of and said Q2Is electrically connected to the base, said Q3And the NM3Is electrically connected to the source of, said Q3And said R3And the NM2Is electrically connected to the drain of (1), and R3Another end of (2) and said Q2The emitter of (2) is electrically connected;
the NM2And the NM1Is grounded, the NM2And the NM1Is electrically connected to the gate of, the NM2And the drain of (1) and theCTATA current source is electrically connected, andCTATthe current source is electrically connected with the output end of the reference voltage source.
3. The low-temperature-drift bandgap reference voltage source according to claim 2, wherein: the NM1And the drain of NM2Is electrically connected.
4. A low temperature-drift bandgap reference voltage source according to any one of claims 1 to 3, wherein: the bandgap reference voltage source further comprises NM3Said NM3Located in the Brokaw structure band gap baseA quasi-circuit and the high-order compensation circuit;
the NM3And the PM2Is electrically connected to the drain electrode of the NM3And the PM2Is electrically connected to the source of, the NM3Source of (2) and the Q1Base electrode of, said Q2Is connected to the power supply output terminal, said NM3Forming an output voltage V constituting the power supply output terminalBGThe source follower driving circuit of (1).
5. The low-temperature-drift bandgap reference voltage source according to claim 4, wherein: output voltage V of power supply output endBGThe expression of (a) is: vBG＝Vbg0-(Vbg0-VBE2,0)T/T0+(2R2/R1)VTl N (N), wherein Vbg0For a band gap voltage at an absolute temperature of-273 deg.C, T0Is a reference temperature, VBE2,0Is Q2At T0V at temperatureBEValue of voltage, VTkT/Q is a thermal voltage with a positive temperature coefficient, k is the boltzmann constant, T is the absolute temperature, Q is the amount of electron charge, and N is Q2And Q1The base area ratio of (a).
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| CN113703511A (en) * | 2021-08-30 | 2021-11-26 | 上海川土微电子有限公司 | Band-gap reference voltage source with ultralow temperature drift |
| CN114356015A (en) * | 2021-12-16 | 2022-04-15 | 上海川土微电子有限公司 | Band-gap reference voltage source |
| CN115016591A (en) * | 2022-06-16 | 2022-09-06 | 上海泰矽微电子有限公司 | Band gap reference circuit with low temperature drift |
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| CN113703511A (en) * | 2021-08-30 | 2021-11-26 | 上海川土微电子有限公司 | Band-gap reference voltage source with ultralow temperature drift |
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| CN114356015B (en) * | 2021-12-16 | 2023-04-07 | 上海川土微电子有限公司 | Band-gap reference voltage source |
| CN115016591A (en) * | 2022-06-16 | 2022-09-06 | 上海泰矽微电子有限公司 | Band gap reference circuit with low temperature drift |
| CN115016591B (en) * | 2022-06-16 | 2024-03-08 | 上海泰矽微电子有限公司 | Band gap reference circuit with low temperature drift |
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