CN109343639A - A kind of Low Drift Temperature band-gap reference voltage circuit, method and its chip - Google Patents
A kind of Low Drift Temperature band-gap reference voltage circuit, method and its chip Download PDFInfo
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- CN109343639A CN109343639A CN201811295320.9A CN201811295320A CN109343639A CN 109343639 A CN109343639 A CN 109343639A CN 201811295320 A CN201811295320 A CN 201811295320A CN 109343639 A CN109343639 A CN 109343639A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention provides a kind of Low Drift Temperature band-gap reference voltage circuit, method and its chip；The circuit includes automatic biasing module, band-gap reference nucleus module, voltage generation module；It the described method comprises the following steps: generating preliminary reference voltage；The reference voltage before compensation is generated with preliminary reference voltage by base current correction；Generate Low Drift Temperature bandgap voltage reference.Low Drift Temperature band-gap reference voltage circuit and method are applied in power management chip.The invention has the advantages that realize superhigh precision, the band gap reference voltage source circuit of ultra low temperature coefficient of deviation can be to provide the reference voltage of high stability to the higher circuit application of reference voltage demand.
Description
Technical field
The present invention designs electronic circuit field, and in particular to a kind of Low Drift Temperature band-gap reference voltage circuit, method and its core
Piece.
Background technique
Currently, reference voltage source has been used as indispensable basic module in semiconductor integrated circuit, it is widely used in and puts
In big device, analog-digital converter, digital analog converter, radio frequency, sensor and power management chip.Traditional reference voltage source includes base
In the voltage reference, the voltage reference based on PN junction forward conduction characteristic and band-gap reference etc. of Zener diode reverse breakdown characteristics
A variety of implementations, wherein since band-gap reference has many advantages, such as that structure is simple, voltage stabilization, obtained answering extensively
With.
With the development of semiconductor technology and portable electronic product, to the benchmark electricity of low-power consumption, high power supply voltage range
The demand of potential source greatly increases, and the design requirement of band-gap reference is also caused to improve a lot.Band-gap reference can produce and electricity
Source and the reference voltage or reference voltage unrelated, with temperature characteristic of technique.The stability of band-gap reference is to whole system
Internal electric source generation, adjustment of output voltage etc. all has direct and vital influence.Bandgap voltage reference is necessary
The deviation of manufacturing process, the influence of variation and ambient temperature of the internal system supply voltage in working range can be overcome.
With the raising of system accuracy, the requirement to the stability of the temperature of benchmark, voltage and technique is also higher and higher.
Power management chip and A/D converter (ADC), D/A converter (DAC), dynamic memory (DRAM),
In the design of the chips such as flash storage, low-temperature coefficient, low-power consumption, the band-gap reference design ten of high PSRR (PSRR)
Divide key.
Brokaw band-gap circuit is a kind of new band-gap reference source circuit that Brokaw was proposed in 1974.Such as figure
Shown in 1Brokaw bandgap cell schematic diagram, it is assumed that circuit is in equilibrium state, since the voltage clamping of amplifier OPs1 acts on, is
Pressure drop on two resistance Rs1 and Rs2 is equal, then the electric current for flowing through two branches is equal, then two triodes Qs1 and Qs2
Base-emitter voltage difference are as follows:
Wherein, the emitter area ratio of triode Qs1 and Qs2 is N.The electric current for flowing through Rs2 is:
The electric current for then flowing through resistance Rs1 is the sum of the electric current of two triode Qs1 and Qs2 emitters, then outputting reference electricity
The expression formula of pressure Vsref is:
By selecting the ratio of suitable N, resistance Rs1 and Rs2, the outputting reference with smaller temperature coefficient can be obtained
Voltage Vsref.
But it in the above-mentioned band-gap reference circuit of the prior art, has the following problems:
1) with the variation of temperature, the bias current for being supplied to band gap voltage generation circuit would generally generate variation, cause
The reference voltage inaccuracy of final output.
2) circuit design itself can cause the precision of compensation poor with mismatch；
3) the excessive coarse high-order temperature compensated precision of the theoretical practical band-gap reference of approximation bring of certain circuits
Difference.
Summary of the invention
In order to solve the above problem: the present invention provides a kind of Low Drift Temperature band-gap reference voltage circuit, method and its application.Pass through
Using base current to the indicial response of temperature, in band gap reference core circuit, it is corrected by resistance versus current, thus
Output voltage is corrected.Curvature compensation module pair of the curvature to upper parabolical trend electric current can be generated by being added to one simultaneously
High-order nonlinear temperature item in reference voltage compensates.
According to the first aspect of the invention, the invention proposes a kind of Low Drift Temperature band-gap reference voltage circuits:
Specific technical solution of the invention is as follows:
A kind of Low Drift Temperature band-gap reference voltage circuit, including automatic biasing module, band-gap reference nucleus module and voltage generate
Module；
The automatic biasing module provides bias voltage and bias current；The automatic biasing module is made during power supply electrifying
For self-start circuit；
The band-gap reference nucleus module is formed based on Brokaw bandgap cell, generates preliminary reference voltage, the band gap
Base modules include base current correction resistance；By the way that base stage electricity is added in the base stage of triode pair in Brokaw bandgap cell
Stream correction resistance generates the reference voltage before compensation after being corrected operation.
The voltage generation module generates final reference voltage.
Preferably, the Low Drift Temperature band-gap reference voltage circuit further includes curvature compensation module；
The curvature compensation module carries out nonlinear curvature compensation to the reference voltage before compensation；The nonlinear curvature is mended
It repays and generates nonlinear curvature compensation electric current for curvature compensation module, nonlinear curvature compensates electric current and passes through resistance generation voltage progress
Compensation；
It is further preferred that automatic biasing module includes field effect transistor M 5 and M6；Triode Q3 and Q4, resistance R6 and
R7；Field effect transistor M 5 and M6 are PMOS tube；Triode Q3 is PNP triode, triode Q4 is NPN triode；
Field effect transistor M 6 connects power vd D, the grid of field effect transistor M 5 and grid, the M5 of M6 with the source level of M5
Drain electrode be connected；Field effect transistor M 6 and M5 form current mirror；The drain electrode of field effect transistor M 6 and one end phase of resistance R7
It is connected in C point and connects band-gap reference nucleus module as the first output end of automatic biasing module；The other end B point of resistance R7 connects
The base stage of triode Q4 and the emitter of triode Q3；One end of the emitter E point connection resistance R6 of triode Q4；Resistance R6's
Other end ground connection；Grounded collector, the base stage of triode Q3 of triode Q3 is connected as the second output terminal of automatic biasing module
Band-gap reference nucleus module.
It is further preferred that band-gap reference nucleus module includes triode Q1, Q2 and Q5；Resistance R01, R02, R1, R2 and
R3；Amplifier OP1；R3 is base current correction resistance；Triode Q1, Q2 and Q5 are NPN triodes；
Triode Q5 collector connection power vd D, triode Q5 base stage connection automatic biasing module the first output end,
One end of emitter D point the connecting resistance R01 and R02 of triode Q5；Triode Q1 and Q2 form triode pair, triode Q1 and Q2
Collector be separately connected the other end of resistance R01 and R02, the collector of triode Q1 and Q2 are separately connected amplifier OP1's
Inverting input terminal and the base stage of normal phase input end, triode Q1 and Q2 are linked together by R3, the base stage A point of triode Q1 connects
It is connected to the second output terminal of biasing module and is generated as the first output end Vbgr connection voltage of band-gap reference nucleus module
Module；The output end of amplifier OP1 connects voltage generation module as the second output terminal of band-gap reference nucleus module；Triode
One end of the emitter connection resistance R2 of Q1；The emitter of triode Q2 passes through one end of resistance R1 connection resistance R2；Resistance R2
The other end ground connection.
It is further preferred that voltage generation module includes field effect transistor M 10, resistance R4 and R5；Field effect transistor
M10 is PMOS tube；
The source level connection power vd D of field effect transistor M 10, the grid of field effect transistor M 10 connect band-gap reference core
The drain electrode of second output terminal, field effect transistor M 10 of core module and one end of resistance R4 link together output as final
Reference voltage Vref；First output end of the other end of resistance R4 and one end of resistance R5 and band-gap reference nucleus module connects
It connects；The other end of resistance R5 is grounded.
Still more preferably, the M5 and the M6 are of the same size.
It is further preferred that curvature compensation module includes field effect transistor M 1, M2, M3, M4, M7, M8 and M9；Resistance
R8, R9 and R10；Amplifier OP2；Field effect transistor M 1-M4, M7, M8 are PMOS tube.M9 is NMOS tube；Curvature compensation module
It further include resistance Rco；
One end of resistance Rco connects the band-gap reference nucleus module, other end ground connection；Specifically: resistance Rco series connection
In the resistance R2 in band-gap reference nucleus module and between ground；That is: one end of resistance Rco connects the band-gap reference nucleus module
In resistance R2, the other end ground connection；The positive terminal connection Vbgr node of amplifier OP2, reverse phase termination node M, output termination field
The grid of effect transistor M9；The source level of field effect transistor M 9 connects power vd D, drain electrode and connects section with one end of resistance R10
Point M；Resistance R8-R10 is connected in series: the other end of resistance R10 and one end of resistance R9 be connected to node H, resistance R9 it is another
End and one end of resistance R8 are connected to the other end ground connection of node L, resistance R8；
The drain electrode of the source electrode of field effect transistor M 1, the source level of M2, M7 is connected；The source electrode of field effect transistor M 3, M4
The drain electrode of source level, M8 is connected；M7 connects power vd D with the source level of M8；The grid connecting node Vpbias of M7 and M8；Node
Vpbias is the grid for the M5 that the automatic biasing module is；The grid connecting node VPTAT of M1 and M3；The grid of M2 and M4 is distinguished
Connecting node L and H；The drain of M2 and M3 is grounded；M1 connects one end of resistance Rco with the drain of M4.
Still more preferably, the M7 and M8 are of the same size.
Still more preferably, comprising trimming circuit Rt1 and Rt2, contact point port in the band-gap reference nucleus module
It is separately connected the input terminal Vinp and Vinn of amplifier OP1.
For the size for adjusting output voltage, to meet the requirement of different application:
Still more preferably, comprising trimming circuit Rt3 in the resistance R5 in the voltage generation module, resistance R5 is string
The potentiometer Rt3 and R50 of connection.
Still more preferably, the fine tuning module T0 to Tn that circuit includes n bit serial is trimmed；In each fine tuning module it
Include logic control element L, switching device K and semifixed resistor RT；For n fine tuning module logic control unit L, derailing switches
Part K and semifixed resistor RT is total up to K0 to Kn, L0 to Ln, RT0 to RTn；Trimming circuit also includes the digit m for controlling signal,
It controls signal and connects logic control element L；N and m is the positive integer greater than 1；
The on state of the output control switch device K of logic control element L, when the switching device K of corresponding node is connected
When, which is connected to output end；When switching device K is disconnected, corresponding node and output end open circuit.
According to the second aspect of the invention, the invention proposes a kind of method that Low Drift Temperature bandgap voltage reference generates, packets
Include following steps:
Step 1: generating preliminary reference voltage；
Step 2: the reference voltage before compensation is generated with preliminary reference voltage by base current correction；
Step 3: generating Low Drift Temperature bandgap voltage reference.
In order to keep the temperature characterisitic of reference voltage more preferable:
Preferably, it can also include step 21 after step 2: nonlinear compensation is carried out to the reference voltage before compensation；Institute
Stating nonlinear curvature compensation is that curvature compensation module generates nonlinear curvature compensation electric current, and nonlinear curvature compensation electric current passes through electricity
Resistance generates voltage and compensates.
Specific step 21 is dynamic regulation compensation；The change that dynamic regulation compensation is monitoring positive temperature coefficient voltage VPTAT
Change, constantly regulate the size of compensation electric current, the compensation to higher order term in band-gap reference BE junction voltage VBE.It can effectively drop in this way
The temperature coefficient of low reference voltage.
It is further preferred that the method also includes trimming step, trims step and refer to resistance is trimmed.
Still more preferably, resistance trims to carry out resistance to the input terminal for generating amplifier in preliminary reference voltage and repairing
It adjusts；
Still more preferably, resistance trims to carry out resistance to the proportion resistor for generating Low Drift Temperature bandgap voltage reference and repairing
It adjusts.
Still more preferably, the different realizations that resistance trims to be accessed by series resistance.
Still more preferably, when being trimmed to the input terminal progress resistance for generating amplifier in preliminary reference voltage, amplification
The resistance of device two inputs carries out the adjusting of opposite direction.
Still more preferably, the digit m of resistance trims step-length n and control signal；The relationship of m and n is 2m=n；M and
N is the positive integer greater than 1.
According to the third aspect of the invention we, the invention proposes a kind of application Low Drift Temperature band-gap reference voltage circuit and methods
Chip:
Preferably, Low Drift Temperature band-gap reference voltage circuit and method are applied in power management chip.
Preferably, Low Drift Temperature band-gap reference voltage circuit and method are applied to A/D converter, D/A converter, dynamic
The chips such as memory or flash storage.
The invention has the following advantages that
The present invention realizes superhigh precision, and the band gap reference voltage source circuit of ultra low temperature coefficient of deviation can be for benchmark
The higher circuit application of voltage requirements provides the reference voltage of high stability.
Simulation result shows that within the scope of -55 DEG C~150 DEG C of wide temperature, the reference voltage temperature of circuit output is floated
Moving coefficient is only 0.7ppm, and voltage change is only 0.4mV.Circuit structure is easily achieved, lower to technique requirement, is suitble to all kinds of works
Cheng Yingyong.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Figure 1B rokaw bandgap cell schematic diagram.
Fig. 2 Low Drift Temperature band-gap reference voltage circuit schematic diagram of the present invention.
Fig. 3 Low Drift Temperature band-gap reference voltage circuit block diagram of the present invention.
Fig. 4 Low Drift Temperature band-gap reference voltage circuit embodiment one of the present invention.
Fig. 5 Low Drift Temperature band-gap reference voltage circuit embodiment two of the present invention.
Fig. 6 Low Drift Temperature band-gap reference voltage circuit simulation result one of the present invention.
Fig. 7 Low Drift Temperature band-gap reference voltage circuit simulation result two of the present invention.
Fig. 8 Low Drift Temperature band-gap reference voltage circuit embodiment three of the present invention.
Temperature compensation coefficient trims constructive embodiment one in Fig. 9 Low Drift Temperature band-gap reference voltage circuit of the present invention.
Temperature compensation coefficient trims constructive embodiment two in Figure 10 Low Drift Temperature band-gap reference voltage circuit of the present invention.
Figure 11 Low Drift Temperature band-gap reference voltage circuit overall diagram of the present invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.Therefore, below to the reality of the invention provided in the accompanying drawings
The detailed description for applying example is not intended to limit the range of claimed invention, but is merely representative of selected implementation of the invention
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
Every other embodiment, shall fall within the protection scope of the present invention.
The basic thought of band-gap reference is related to temperature in the base emitter voltage VBE for eliminate bipolar junction transistor
Item, obtain band gap voltage.VBE is
Wherein VG0 is the band gap voltage of the silicon derived under 0K kelvin degree, and T is Kelvin's absolute temperature, and Tr is
Fiducial temperature, base emitter voltage of the VBE0 at fiducial temperature Tr, the constant relevant to technique that η is positive, θ presenting set
Electrode current IC order relevant to temperature.VBE has negative temperature coefficient, usually between -1.7mV/C to -2mV/C.
The present invention provides a kind of Low Drift Temperature band-gap reference voltage circuit, method and its application.With the wide temperature model of Low Drift Temperature
High-precision characteristic is enclosed, by passing through resistance in band gap reference core circuit to the indicial response of temperature using base current
(in the resistance of transistor base connection) is corrected electric current, to be corrected to output voltage.It is added to one simultaneously
Can generate curvature compensation module from curvature to upper parabolical trend electric current to high-order nonlinear temperature item in reference voltage into
Row compensation.Its voltage provided can be applied to power management chip (BMIC Battery Management IC) or other cores
In piece.Other chips can be deposited for A/D converter (ADC), D/A converter (DAC), dynamic memory (DRAM), Flash
The chips such as reservoir.
The present invention is realized based on Brokaw bandgap cell, principle such as Fig. 2 Low Drift Temperature band-gap reference voltage circuit schematic diagram
It is shown, as shown in Figure 2: (generated based on Brokaw bandgap cell) firstly, preliminary reference voltage Vref by with base current school
The reference voltage Vref before compensation is generated after positive operation；It should be noted that before generating compensation after base current correction calculation
Reference voltage Vref can also be used as bandgap voltage reference output.
In order to make bandgap voltage reference have the broader temperature range of lower temperature drift and higher precision, further,
Nonlinear compensation operation is carried out to the reference voltage before compensation, nonlinear curvature compensates electric current Ico to the reference voltage before compensation
Vref is compensated, i.e., nonlinear curvature compensation electric current Ico generates voltage to the reference voltage before compensation by resistance
Vref is compensated；Finally generate final reference voltage Vref.
Low Drift Temperature band-gap reference voltage circuit of the present invention is specifically described as follows:
As shown in Fig. 3 Low Drift Temperature band-gap reference voltage circuit block diagram, the Low Drift Temperature band-gap reference voltage circuit includes certainly
Biasing module 10, band-gap reference nucleus module 11, curvature compensation module 12 and voltage generation module 13.
The effect of automatic biasing module 10 is biasing (bias current or bias voltage) to be provided for other modules and in power supply
It may act as start-up circuit in power up.
The effect of band-gap reference nucleus module 11 is to generate preliminary reference voltage, while band-gap reference module includes base stage electricity
Stream correction resistance passes through the reference voltage before compensating with generation after base current correction calculation；
What needs to be explained here is that preliminary reference voltage is generated based on Brokaw bandgap cell.By in Brokaw band gap
Base current is added in unit in the base stage of triode pair and corrects resistance, to generate the benchmark before compensation after being corrected operation
Voltage.
The effect of curvature compensation module 12 is to carry out nonlinear curvature compensation to the reference voltage before compensation.It is described non-linear
Curvature compensation process are as follows: curvature compensation module 12 generates nonlinear curvature and compensates electric current Ico, and nonlinear curvature compensates electric current Ico
Voltage is generated by resistance to compensate the reference voltage Vref before compensation.
The voltage generation module 13 generates final reference voltage Vref after being handled compensated reference voltage.
It is introduced below with reference to modules of the embodiment to Low Drift Temperature band-gap reference voltage circuit of the present invention:
Preferred embodiment one:
It as shown in Figure 4 include automatic biasing in embodiment one as shown in Fig. 4 Low Drift Temperature band-gap reference voltage circuit embodiment one
Module 10, band-gap reference nucleus module 11 and voltage generation module 13.
Automatic biasing module 10 includes field effect transistor (metal-oxide-semiconductor) M5 and M6；Triode Q3 and Q4, resistance R6 and R7；?
Effect transistor M5 and M6 are PMOS tube；Triode Q3 is PNP triode, triode Q4 is NPN triode.
Field effect transistor M 6 connects power vd D, the grid of field effect transistor M 5 and grid, the M5 of M6 with the source level of M5
Drain electrode be connected；Field effect transistor M 6 and M5 form current mirror；The drain electrode of field effect transistor M 6 and one end phase of resistance R7
It is connected in C point and connects band-gap reference nucleus module 11 as the first output end of automatic biasing module 10；The other end B of resistance R7
The base stage of point connecting triode Q4 and the emitter of triode Q3；One end of the emitter E point connection resistance R6 of triode Q4；Electricity
Hinder the other end ground connection of R6；The grounded collector of triode Q3, the base stage of triode Q3 are second defeated as automatic biasing module 10
Outlet connects band-gap reference nucleus module 11.
The self-starting process of automatic biasing module 10 are as follows: C point, B point voltage increase, and the BE of triode Q3 and Q4, which are tied, to be connected, and three
Pole pipe Q3 and Q4 starts band-gap reference nucleus module 11.
Band-gap reference nucleus module 11 is generated based on Brokaw bandgap cell, including triode Q1, Q2 and Q5；Resistance R01,
R02, R1, R2 and R3；Amplifier OP1；R3 is base current correction resistance；Triode Q1, Q2 and Q5 are NPN triodes.
The first output of the collector connection power vd D, the base stage connection automatic biasing module 10 of triode Q5 of triode Q5
It holds, one end of emitter D point the connecting resistance R01 and R02 of triode Q5；Triode Q1 and Q2 form triode pair, triode Q1
The other end of resistance R01 and R02 is separately connected with the collector of Q2, the collector of triode Q1 and Q2 are separately connected amplifier
The inverting input terminal and normal phase input end of OP1, the base stage of triode Q1 and Q2 linked together by R3, the base stage of triode Q1
A point connects the second output terminal of automatic biasing module 10 and the first output end Vbgr connection as band-gap reference nucleus module 11
Voltage generation module 13；The output end of amplifier OP1 is raw as the second output terminal connection voltage of band-gap reference nucleus module 11
At module 13；One end of the emitter connection resistance R2 of triode Q1；The emitter of triode Q2 passes through resistance R1 connection resistance
One end of R2；The other end of resistance R2 is grounded.
Voltage generation module 13 includes field effect transistor M 10, resistance R4 and R5；Field effect transistor M 10 is PMOS tube.
The source level connection power vd D of field effect transistor M 10, the grid of field effect transistor M 10 connect band-gap reference core
The drain electrode of second output terminal, field effect transistor M 10 of core module 11 and one end of resistance R4 link together output as most
Whole reference voltage Vref；First output end of the other end of resistance R4 and one end of resistance R5 and band-gap reference nucleus module 11
Connection；The other end of resistance R5 is grounded.
Low Drift Temperature band-gap reference voltage circuit embodiment one in Fig. 4 is realized based on Brokaw bandgap cell, is mainly passed through
The difference DELTA VBE of Q1 and Q2 base emitter voltage generates positive temperature coefficient voltage VPTAT at resistance R1 and R2 intermediate node,
The linear term in the negative temperature coefficient in VBE to compensate Q1, to realize single order temperature-compensating.
Wherein, k is Boltzmann constant, and q is the quantity of electric charge, and N is Q1 and Q2 emitter junction area ratio.
Automatic biasing module 10 in embodiment one, which can be provided effectively for other modules in circuit, to be biased and on power supply
It may act as start-up circuit in electric process.
The base stage of the emitter connection Q4 of Q3 in embodiment one, Q3 and Q4 constitute cascade source follower structure.M5 and M6
It is of the same size.
The different node in conjunction with shown in the Low Drift Temperature band-gap reference voltage circuit embodiment one in Fig. 4 (A, B, C, D,
E):
Wherein E point voltage is Vbgr+VBE3-VBE4, and (voltage value that Vbgr is node A here) obtains bias current I0
For
E point voltage has positive temperature coefficient, and R6 selects the resistance with positive temperature coefficient here, so that bias current
I0 is more stable.The VBE of Q3 is offset as far as possible using the VBE of Q5, to provide one relatively surely for band-gap reference nucleus module 11
Fixed input voltage VD (i.e. the voltage of node D):
VD=Vbgr+I0R7 (4)
Because M5 and M6 forms current mirror and is of the same size, the electric current of M5 and M6 drain electrode is equal.
Band gap voltage Vbgr usually only 1.2V or so, since the reference voltage needed in the application according to situation is not only
1.2V.Therefore it needs to generate different voltage values by voltage generation module 13.In voltage generation module 13, pass through electric resistance partial pressure
Network R4 and R5 obtains Vref (i.e. final reference voltage).
Base current Ib1, Ib2 and Ib3 of triode Q1, Q2 and Q3 can pass through resistance in low embodiment one in Fig. 4
R4 generates pressure drop, at this point, unnecessary temperature dependent term can be introduced in Vref, such as formula (5)
In formula, due to the influence of base current, Vref_nc and Vbgr are no longer linearly related.Under ideal conditions
Vbgr is a temperature independent value, and base current will affect the temperature coefficient of output voltage.The expression formula of base current
It is an exponential function relevant to temperature
Therefore, resistance R3 is added in circuit to eliminate influence of the base current to output voltage, and utilizes base current
Indicial response output voltage is compensated.The Vbgr value that R3 is changed, such as formula (7)
It is available that formula (7) are substituted into (5)
X is R4/R5 in formula, and y R2/R1, K0 are negative the coefficient of temperaturecoefficient voltage VBE.K1 is single order temperature-compensating system
Number, K2 are high-order temperature compensated coefficient.Wherein single order temperature compensation coefficient K1 is mainly related to the ratio of R2 and R1, and high-order temperature
It is mainly related to the size of R3 and z to spend penalty coefficient K2.Wherein z value is determined by the ratio of Ib3 and Ib2 size of current.
Therefore, the ratio decision single order temperature compensation coefficient K1 of R2 and R1, and the size of R4 and R5, determine Vref_nc's
Numerical value, R6 determine the size of I0, to determine the ratio of electric current Ib3 and Ib2.After above-mentioned coefficient has been determined, R3 can be obtained and determined
High-order temperature compensated COEFFICIENT K 2 is determined.Bipolar junction transistor base current can be not only eliminated in this way to final reference voltage
The negative effect of Vref_nc can also be further compensate for reference voltage.
It should be noted that Vref_nc here refers to the Vref in Fig. 4, being denoted as Vref_nc in above formula is mainly
In order to distinguish with the Vref in Examples hereinafter two, illustrate that it is the final benchmark electricity not compensated by nonlinear curvature
Press Vref.
Preferred embodiment two:
For the preferred embodiment of the present invention second is that based on the improvement on the basis of preferred embodiment one, the present embodiment part does not refer to it
Place, can refer to corresponding contents in embodiment one.
By the temperature-compensating of aforementioned base current correction resistance, parabolic obtained output voltage Vref downward in curvature
Linear trends of change has had lower temperature drift coefficient.And in order to further improve output voltage Vref in high temperature and low
Temperature drift trend under the conditions of temperature considers that increasing curvature compensation module in circuit compensates Vref.The curvature of proposition
Compensation method uses the thought of dynamic regulation, by monitoring positive temperature coefficient voltage VPTAT (proportional to
Absolute temperature, and absolute temperature is proportional) variation, the size of compensation electric current Ico is constantly regulate, thus real
Now to the compensation of higher order term in VBE, the temperature coefficient of reference voltage is effectively reduced.
As shown in the curvature compensation schematic diagram of Fig. 5 Low Drift Temperature band-gap reference voltage circuit embodiment two, it is in embodiment
Curvature compensation module 12 is increased on the basis of the correction of one base current.It should be noted that explanation and introduction for convenience is bent
The course of work of rate compensating module 12, here we only show curvature compensation module 12 and its connected parts.
Curvature compensation module 12 includes
Field effect transistor M 1, M2, M3, M4, M7, M8 and M9；Resistance R8, R9 and R10；Amplifier OP2；Field effect transistor
Pipe M1-M4, M7, M8 are PMOS tube.M9 is NMOS tube；Curvature compensation module 12 further includes resistance Rco.
Resistance Rco is increased connecting between resistance R2 and ground in band-gap reference nucleus module 11.That is: the one of resistance Rco
End connection resistance R2, other end ground connection.
The positive terminal connection Vbgr node of amplifier OP2, reverse phase termination node M, output terminate field effect transistor M 9
Grid；The source level of field effect transistor M 9 connects one end connecting node M of power vd D, drain electrode and resistance R10；Resistance R8-R10
Be connected in series: the other end of resistance R10 and one end of resistance R9 are connected to the one of node H, the other end of resistance R9 and resistance R8
End is connected to the other end ground connection of node L, resistance R8.
M1 and M2, M3 and M4 form two groups of differential pair pipes: the drain electrode of the source electrode of field effect transistor M 1, the source level of M2, M7
It is connected；The drain electrode of the source electrode of field effect transistor M 3, the source level of M4, M8 is connected；M7 connects power vd D with the source level of M8；M7 and
The grid connecting node Vpbias of M8；The grid (not illustrating in Fig. 5) for the grid and M6 that node Vpbias is M5；M1's and M3
Grid connecting node VPTAT；The grid of M2 and M4 is separately connected node L and H；The drain of M2 and M3 is grounded；The drain of M1 and M4
Connect one end of resistance Rco.
The size of M7 and M8 is identical, they and M5, M6 form current mirror.It is identical that size is respectively obtained in the drain electrode of M7 and M8
Electric current Is1 and Is2.The electric current for the drain electrode that M1 is connected with M4 is correction current Ico.
The grid of transistor M1 and M3 are connected to the positive temperature coefficient voltage VPTAT in Bandgap core.In amplifier OP2
With (M9 is source follower here) under the action of M9, M point voltage is equal with node Vbgr, between series resistance R10, R9, R8
Node H, L provide different size voltage Vh, Vl, as shown in formula (10).
PMOS M1 to M4 works in weak inversion regime in circuit, and sub-threshold region electric current is
Electric current by two pairs of differential pair tubes is
Is=Is1=Is2=ID1+ID2=ID3+ID4 (12)
It is respectively in conjunction with the drain current ID1 and ID4 that (11) and (12) can obtain M1 and M4
At circuit at low ambient temperatures, VPTAT is very low, can obtain ID1 by formula (13) and be approximately equal to IS, i.e., the electricity transmitted from IS
Stream is most of by M1, ID1 higher, and ID4 is lower at this time, is approximately equal to 0.It is gradually become smaller as temperature increases ID1.When temperature is super
When crossing Tmid (median that Tmid here is temperature range), ID1 is gradually reduced to 0 and ID4 starts to increase.When circuit work exists
Under hot conditions, VPTAT is greater than VH, obtains ID4 by formula (13) and is approximately equal to IS, ID1 is lower at this time.The sum of electric current ID1 and ID4 is
Electric current Ico is compensated, the resistance Rco made it through in band-gap reference compensates Vref mainly by ID1 at low temperature,
It is mainly compensated by ID4 under high temperature.During temperature change, when VPTAT is equal to VH or VL, electric current Ico is compensated
It is equal to IS/2.
Convolution (8) as a result, finally obtained Vref such as formula (14) shown in.
The Parameter Map emulated for above preferred embodiment one and embodiment two.
As shown in Fig. 6 Low Drift Temperature band-gap reference voltage circuit simulation result one of the present invention, in Fig. 6 for ID1, ID4 and Ico with
Temperature changing trend figure.The trend of the slope variation of ID1 and ID4 can be by showing with linear line comparison.Two of them
Crosspoint is the slope transition points of current curve, while respectively representing the VPTAT point equal with VL, VH.It can be connected by adjusting
Resistance R10, R9, R8 size are changed the index variation track of compensation electric current to change the value of VL, VH, realize most
Good curvature compensation effect.
As shown in Fig. 7 Low Drift Temperature band-gap reference voltage circuit simulation result one of the present invention, for before curvature compensation in Fig. 7
The comparison diagram of Vref, curvature compensation electric current Ico and Vref after curvature compensation.
Vref (uppermost diagram in Fig. 7) shows as one section within the temperature range of -55 DEG C~150 DEG C before curvature compensation
The parabolic curve that Open Side Down.Curvature compensation electric current Ico (intermediate diagram in Fig. 7) is within the temperature range of -55 DEG C~150 DEG C
Show as the parabolic curve of one section of opening upwards.Curvature compensation electric current Ico, which passes through, compensates resistance Rco generation offset voltage, and with
Vref voltage (nethermost diagram in Fig. 7) after the curvature compensation that Vref is obtained after being overlapped.Vref after curvature compensation
Voltage shows as one section of curve with dual waves within the temperature range of -55 DEG C~150 DEG C, maximum voltage and minimum voltage
Simulation result difference is only 0.3mV.
Preferred embodiment three:
The preferred embodiment of the present invention is third is that based on the improvement on the basis of preferred embodiment one and preferred embodiment two, this implementation
Example part does not refer to place, can refer to corresponding contents in preferred embodiment one and preferred embodiment two.
On the basis of above preferred embodiment one and embodiment two, in order to avoid technique change or mismatch make circuit
At performance degradation, be also added in the structure and trim circuit for being corrected to the circuit after the completion of production.
As shown in Fig. 8 Low Drift Temperature band-gap reference voltage circuit embodiment three of the present invention, as shown in Figure 8 in band-gap reference core
The circuit that trims in module 11 for temperature drift coefficient includes two potentiometers Rt1 and Rt2, their contact point port difference
Connect the input terminal Vinp and Vinn of amplifier OP1.What needs to be explained here is that only showing aforementioned band-gap reference core mould in Fig. 8
A part of block 11, while should also be emphasized that is the improvement carried out by taking preferred embodiment two as an example, preferred embodiment here
As soon as similar improvement can also be carried out, it be not described in detail here.
As shown in Figure 8 also comprising trimming circuit i.e. potentiometer Rt3 in the R5 in voltage generation module 13, i.e. R5 is series connection
Potentiometer Rt3 and R50.Its effect is the size for adjusting output voltage, to meet the requirement of different application.
Temperature compensation coefficient trims knot in potentiometric concrete principle such as Fig. 9 Low Drift Temperature band-gap reference voltage circuit of the present invention
Shown in structure embodiment one, as shown in Figure 9, it includes the fine tuning module T0 to Tn of n bit serial.It includes in each fine tuning module
Logic control element L, switching device K and semifixed resistor RT.For n fine tuning module logic control unit L, switching device K
And semifixed resistor RT is total up to K0 to Kn, L0 to Ln, RT0 to RTn.
The potentiometric working principle is the position for adjusting output terminal in series resistance, and the position m of input encodes (Fig. 9
In illustrated with 4 codings) the signal same time only closes the switch one.Resistance RT0 to RTN is connected in series, logic control list
The on state of the output control switch device K of first L, when the switching device K of corresponding node conducting, which is connected to defeated
Outlet；When switching device K is disconnected, corresponding node and output end open circuit.
It is drawn in the fine tuning module of n bit serial and connects the node that needs are finely tuned, in Fig. 9 by taking the input terminal Vout of OP1 as an example
Signal.
It trims in circuit series connection access circuit.Trim digit (the i.e. input logic of step-length n and control signal that circuit trims
The digit m) of control unit determines the range trimmed and trims number a little.Their relationship is 2m=n.
Here by taking m=4 as an example, n=16.I.e. one 4 trim structure, trim a little totally 16.When circuit needs to adjust
Temperature coefficient then changes the position of contact point.
Two potentiometers carry out opposite direction adjusting in fig. 8.As shown in figure 8, wherein Rt1 and Rt2 total size is all Rta
+ Rtb, wherein Rta=Rtb=nR, when circuit is adjusted, Rta=(n+x) R and Rtb=(n-x) R, wherein x
Value between-n to n, then the ratio of two-way positive temperature coefficient electric current IPTAT1, IPTAT2 be
κ=IPTAT2/IPTAT1=(x+n)/(x-n) (15)
Therefore the positive temperature coefficient voltage after being trimmed is
For potentiometer, there are many implementation, such as Figure 10 of implementation in addition Low Drift Temperature bandgap voltage references of the present invention
Temperature compensation coefficient trims shown in constructive embodiment two in circuit, it includes the fine tuning module T0 to Tn of n bit serial.Each micro-
It includes logic control element L, transmission gate Tr, NOT gate N and semifixed resistor RT in mode transfer block.For n fine tuning module logics
Control unit L, transmission gate Tr NOT gate N and semifixed resistor RT are total up to L0 to Ln, Tr0 to Trn, N0 to Nn, RT0 to RTn.
Its benefit is that control consistency is more preferable, particularly as not being described in detail.
For ease illustration and understanding, integrated circuit figure of the invention is given, such as Figure 10 Low Drift Temperature band gap base of the present invention
Shown in quasi- potential circuit overall diagram, it is the combination of aforementioned preferred embodiments one, embodiment two and embodiment three as shown in Figure 10.
Based on aforementioned preferred embodiments, the present invention also provides a kind of methods that Low Drift Temperature bandgap voltage reference generates, including
Following steps:
Step 1: generating preliminary reference voltage；
Step 2: the reference voltage before compensation is generated with preliminary reference voltage by base current correction；
Step 3: generating Low Drift Temperature bandgap voltage reference.
In order to keep the temperature characterisitic of reference voltage more preferable:
It can also include step 21 after step 2: nonlinear compensation is carried out to the reference voltage before compensation；It is described non-linear
Curvature compensation is that curvature compensation module generates nonlinear curvature compensation electric current, and nonlinear curvature compensates electric current and passes through resistance generation electricity
Pressure compensates.
Specific step 21 is dynamic regulation compensation；The change that dynamic regulation compensation is monitoring positive temperature coefficient voltage VPTAT
Change, constantly regulate the size of compensation electric current, the compensation to higher order term in band-gap reference BE junction voltage VBE.It can effectively drop in this way
The temperature coefficient of low reference voltage.
In the above-mentioned methods, further include trimming step, trim step and refer to resistance is trimmed.
Resistance, which trims, can be divided into two parts progress:
In order to avoid technique change or mismatch are to performance degradation caused by circuit: amplifying to generating in preliminary reference voltage
The input terminal of device carries out resistance and trims；
In order to adjust the size of output voltage, to meet the requirement of different application: to generation Low Drift Temperature bandgap voltage reference
Proportion resistor carry out resistance trim.
Resistance trims the different realizations for being specifically as follows and accessing by series resistance.Amplify to generating in preliminary reference voltage
When the input terminal progress resistance of device trims, the resistance of two, amplifier inputs carry out the adjusting of opposite direction.
The relationship of the digit m of step-length n and control signal that resistance trims are 2m=n；M and n is the positive integer greater than 1.
Compared with prior art, the invention has the advantages that
The present invention realizes superhigh precision, and the band gap reference voltage source circuit of ultra low temperature coefficient of deviation can be for benchmark
The higher circuit application of voltage requirements provides the reference voltage of high stability.Simulation result shows the width at -55 DEG C~150 DEG C
Within the temperature range of, the reference voltage temperature drift coefficient of circuit output is only 0.7ppm, and voltage change is only 0.4mV.Circuit
Structure is easily achieved, lower to technique requirement, is suitble to all kinds of engineer applications.
It should be noted that having high-order temperature compensated band gap reference voltage source circuit shown in the present invention is only explanation
Preferable examples of the invention, not limit the scope of the present invention.What any conception range according to the present invention carried out, including it is right
PNP pipe exchange is managed at NPN, and PMOS tube is exchanged into NMOS tube, is provided under design to the change of the local structure of circuit, in the present invention
Replacement, modification or the modification etc. of change and other unsubstantialities to circuit implementing method, belong to the scope of the present invention
Within.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", "outside", " up time
The orientation or positional relationship of the instructions such as needle ", " counterclockwise " is to be based on the orientation or positional relationship shown in the drawings, and is merely for convenience of
The description present invention and simplified description, rather than the equipment of indication or suggestion meaning or element must have a particular orientation, with spy
Fixed orientation construction and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance
Or implicitly indicate the quantity of indicated technical characteristic.Define " first " as a result, the feature of " second " can be expressed or
Implicitly include one or more of the features.In the description of the present invention, the meaning of " plurality " is two or more,
Unless otherwise specifically defined.
In the present invention unless specifically defined or limited otherwise, term " installation ", " connected ", " connection ", " fixation " etc.
Term shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integral；It can be mechanical connect
It connects, is also possible to be electrically connected；It can be directly connected, can also can be in two elements indirectly connected through an intermediary
The interaction relationship of the connection in portion or two elements.It for the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
In the present invention unless specifically defined or limited otherwise, fisrt feature second feature "upper" or "lower"
It may include that the first and second features directly contact, also may include that the first and second features are not direct contacts but pass through it
Between other characterisation contact.Moreover, fisrt feature includes the first spy above the second feature " above ", " above " and " above "
Sign is right above second feature and oblique upper, or is merely representative of first feature horizontal height higher than second feature.Fisrt feature exists
Second feature " under ", " lower section " and " following " include that fisrt feature is directly below and diagonally below the second feature, or is merely representative of
First feature horizontal height is less than second feature.
Claims (10)
1. a kind of Low Drift Temperature band-gap reference voltage circuit, comprising:
Automatic biasing module,
Band-gap reference nucleus module
With
Voltage generation module；
The automatic biasing module provides bias voltage and bias current；
The automatic biasing module is during power supply electrifying as self-start circuit；
The band-gap reference nucleus module is formed based on Brokaw bandgap cell, generates preliminary reference voltage:
The band-gap reference module includes base current correction resistance；Pass through the base stage of the triode pair in Brokaw bandgap cell
Middle addition base current corrects resistance, generates the reference voltage before compensation after being corrected operation；
The voltage generation module generates final reference voltage.
2. Low Drift Temperature band-gap reference voltage circuit as described in claim 1, it is characterised in that:
It further include curvature compensation module；
The curvature compensation module carries out nonlinear curvature compensation to the reference voltage before compensation；
The nonlinear curvature compensation is that curvature compensation module generates nonlinear curvature compensation electric current, and nonlinear curvature compensates electric current
Voltage is generated by resistance to compensate.
3. Low Drift Temperature band-gap reference voltage circuit as claimed in claim 2, it is characterised in that:
The curvature compensation module includes field effect transistor M 1, M2, M3, M4, M7, M8 and M9；Resistance R8, R9 and R10；Amplification
Device OP2；Field effect transistor M 1-M4, M7, M8 are PMOS tube；M9 is NMOS tube；Curvature compensation module further includes resistance Rco；
One end of resistance Rco connects the band-gap reference nucleus module, other end ground connection；The positive terminal of amplifier OP2 connects section
The grid of point Vbgr, reverse phase termination node M, output termination field effect transistor M 9；The source level of field effect transistor M 9 connects electricity
One end connecting node M of source VDD, drain electrode and resistance R10；Resistance R8-R10 is connected in series: the other end and resistance R9 of resistance R10
One end be connected to node H, the other end of resistance R9 and resistance R8 one end be connected to node L, resistance R8 the other end ground connection；
The drain electrode of the source electrode of field effect transistor M 1, the source level of M2, M7 is connected；The source electrode of field effect transistor M 3, M4 source level,
The drain electrode of M8 is connected；M7 connects power vd D with the source level of M8；The grid connecting node Vpbias of M7 and M8；Node Vpbias is
The automatic biasing module is the grid of M5；The grid connecting node VPTAT of M1 and M3；The grid of M2 and M4 is separately connected node L
And H；The drain of M2 and M3 is grounded；M1 connects one end of resistance Rco with the drain of M4.
4. Low Drift Temperature band-gap reference voltage circuit as claimed in claim 2, it is characterised in that:
The automatic biasing module includes field effect transistor M 5 and M6；Triode Q3 and Q4, resistance R6 and R7；Field effect transistor
M5 and M6 is PMOS tube；Triode Q3 is PNP triode, triode Q4 is NPN triode；
Field effect transistor M 6 connects power vd D, the leakage of the grid, M5 of the grid and M6 of field effect transistor M 5 with the source level of M5
Extremely it is connected；Field effect transistor M 6 and M5 form current mirror；The drain electrode of field effect transistor M 6 and one end of resistance R7 are connected in C
It puts and connects band-gap reference nucleus module as the first output end of automatic biasing module；The other end B point of resistance R7 connects three poles
The base stage of pipe Q4 and the emitter of triode Q3；One end of the emitter E point connection resistance R6 of triode Q4；Resistance R6's is another
End ground connection；Second output terminal connection band gap of the grounded collector, the base stage of triode Q3 of triode Q3 as automatic biasing module
Benchmark nucleus module.
5. Low Drift Temperature band-gap reference voltage circuit as claimed in claim 2, it is characterised in that:
The voltage generation module includes field effect transistor M 10, resistance R4 and R5；Field effect transistor M 10 is PMOS tube；
The source level connection power vd D of field effect transistor M 10, the grid of field effect transistor M 10 connect band-gap reference core mould
The drain electrode of second output terminal, field effect transistor M 10 of block and one end of resistance R4 link together output as final base
Quasi- voltage Vref；The other end of resistance R4 and one end of resistance R5 and the first output end of band-gap reference nucleus module are connect；Electricity
Hinder the other end ground connection of R5.
6. Low Drift Temperature band-gap reference voltage circuit as claimed in claim 5, it is characterised in that:
Comprising trimming circuit Rt3 in resistance R5 in the voltage generation module, resistance R5 is concatenated potentiometer Rt3 and R50.
7. a kind of method that Low Drift Temperature bandgap voltage reference generates,
It the described method comprises the following steps:
Step 1: generating preliminary reference voltage；
Step 2: the reference voltage before compensation is generated with preliminary reference voltage by base current correction；
Step 3: generating Low Drift Temperature bandgap voltage reference.
8. the method that a kind of Low Drift Temperature bandgap voltage reference as claimed in claim 7 generates, it is characterised in that:
Further include step 21 after step 2: nonlinear compensation is carried out to the reference voltage before compensation；
The nonlinear curvature compensation is that curvature compensation module generates nonlinear curvature compensation electric current, and nonlinear curvature compensates electric current
Voltage is generated by resistance to compensate.
9. the method that a kind of Low Drift Temperature bandgap voltage reference as claimed in claim 8 generates, it is characterised in that:
Step 21 is dynamic regulation compensation；Dynamic regulation compensation are as follows: the variation of monitoring positive temperature coefficient voltage VPTAT is constantly adjusted
The size of section compensation electric current, the compensation to higher order term in band-gap reference BE junction voltage VBE.
10. a kind of chip using Low Drift Temperature band-gap reference voltage circuit: it is characterized by:
The Low Drift Temperature band-gap reference voltage circuit and method are applied in power management chip.
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN110320954A (en) * | 2019-08-16 | 2019-10-11 | 电子科技大学 | A kind of Low Drift Temperature band-gap reference circuit based on curvature compensation |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101030085A (en) * | 2007-01-16 | 2007-09-05 | 西安交通大学 | Reference voltage module and its temperature compensating method |
| CN101788835A (en) * | 2010-03-19 | 2010-07-28 | 中国人民解放军国防科学技术大学 | Band-gap reference source for realizing curvature correction through self-adaptive base current compensation |
| US20150123643A1 (en) * | 2006-06-02 | 2015-05-07 | Dolpan Audio, Llc | Bandgap circuit with temperature correction |
| CN107121997A (en) * | 2017-05-08 | 2017-09-01 | 电子科技大学 | A kind of high-precision band-gap reference source compensated with self-adaption high-order |
-
2018
- 2018-11-01 CN CN201811295320.9A patent/CN109343639B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150123643A1 (en) * | 2006-06-02 | 2015-05-07 | Dolpan Audio, Llc | Bandgap circuit with temperature correction |
| CN101030085A (en) * | 2007-01-16 | 2007-09-05 | 西安交通大学 | Reference voltage module and its temperature compensating method |
| CN101788835A (en) * | 2010-03-19 | 2010-07-28 | 中国人民解放军国防科学技术大学 | Band-gap reference source for realizing curvature correction through self-adaptive base current compensation |
| CN107121997A (en) * | 2017-05-08 | 2017-09-01 | 电子科技大学 | A kind of high-precision band-gap reference source compensated with self-adaption high-order |
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| CN110086487A (en) * | 2019-04-19 | 2019-08-02 | 中国电子科技集团公司第五十八研究所 | A kind of broadband Larger Dynamic range logarithmic detector |
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| CN110928354A (en) * | 2019-12-24 | 2020-03-27 | 许昌学院 | Low-working-voltage high-stability reference voltage source |
| CN111949063A (en) * | 2020-08-10 | 2020-11-17 | 上海川土微电子有限公司 | Band-gap reference voltage source with low temperature drift |
| CN113721694A (en) * | 2021-08-05 | 2021-11-30 | 西安交通大学 | Self-compensating band gap reference source structure based on curvature function and application thereof |
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| CN109343639B (en) | 2020-09-22 |
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Effective date of registration: 20210831 Address after: 401332 unit 1, building 1, phase 3, R & D building, Xiyong micro power park, Shapingba District, Chongqing Patentee after: Chongqing Institute of integrated circuit innovation Xi'an University of Electronic Science and technology Address before: 710071 No. 2 Taibai South Road, Shaanxi, Xi'an Patentee before: XIDIAN University |
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