CN114489218B - Band-gap reference voltage source with low temperature drift and low voltage offset and electronic equipment - Google Patents
Band-gap reference voltage source with low temperature drift and low voltage offset and electronic equipment Download PDFInfo
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- CN114489218B CN114489218B CN202111645691.7A CN202111645691A CN114489218B CN 114489218 B CN114489218 B CN 114489218B CN 202111645691 A CN202111645691 A CN 202111645691A CN 114489218 B CN114489218 B CN 114489218B
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
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- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention provides a band-gap reference voltage source with low temperature drift and low offset and electronic equipment, wherein the band-gap reference voltage source comprises a starting circuit, a reference core generating circuit, a high-order temperature compensating circuit, a high-temperature compensating circuit and a reference voltage output circuit, wherein the high-order temperature compensating circuit generates logarithmic characteristic current to directly offset a high-order nonlinear item in a triode circuit so as to realize high-order temperature compensation, meanwhile, the operating current with positive temperature characteristic is utilized to flow for splitting, the problem that the reference voltage is increased due to the fact that the proportion of the nonlinear item in a high-temperature stage is greatly increased, and meanwhile, the offset of the reference voltage is reduced by increasing a T-shaped resistor network, the output precision of the reference voltage is improved, a voltage dividing resistor network is increased, the differential input voltage of an error amplifier is reduced, the reference voltage is ensured to work under lower power supply voltage, and the voltage operating range of the band-gap reference voltage source is expanded.
Description
Technical Field
The invention belongs to the technical field of reference voltage sources, and particularly relates to a band-gap reference voltage source with low temperature drift, low voltage and low offset and electronic equipment.
Background
Reference voltage sources with low temperature drift and high accuracy are widely used in analog and digital circuitry. With the substantial reduction in semiconductor process size, current CMOS processes need to operate at lower supply voltages, but the threshold of the device is not substantially reduced with the reduction in size; on the other hand, to reduce circuit mismatch, conventional bandgap reference voltage sources typically clamp the base-emitter voltage of a transistor with an error amplifier input, as shown in fig. 1. The conventional bandgap reference voltage source is faced with the problem that when the power supply voltage is low, the bandgap reference voltage source cannot ensure that the error amplifier works in a proper area under the conditions of full process, full temperature and full voltage (PVT) due to the fact that the threshold voltage of the device is too high, and mismatch is caused, so that the reference output voltage is inaccurate.
The conventional bandgap reference voltage source uses VBE voltage to represent a negative temperature coefficient, when two triodes operate at different current densities, the difference of voltages between their base and emitter is proportional to absolute temperature, avbe has a positive temperature coefficient, generating a zero temperature coefficient bandgap reference voltage, the conventional bandgap reference voltage source only performs first order linear compensation, and the temperature drift coefficient of the conventional bandgap reference voltage source is limited to 20 ppm-100 ppm/°c due to the presence of a high order nonlinear term of VBE. It is difficult to meet the current performance requirements of low temperature drift.
Disclosure of Invention
The invention aims to provide a band-gap reference voltage source with low temperature drift, low voltage and low offset, and aims to solve the problem that the traditional band-gap reference voltage source cannot realize low temperature drift, low voltage and low offset.
The first aspect of the embodiment of the invention provides a band-gap reference voltage source with low temperature drift, low voltage and low offset, which comprises a starting circuit, a reference core generating circuit, a high-order temperature compensating circuit, a high-temperature compensating circuit and a reference voltage output circuit;
the starting circuit generates a first driving level to the reference core generating circuit when the power supply voltage is electrified;
the reference core generating circuit comprises an error amplifier, a voltage dividing resistor network, a T-shaped resistor network and two triode circuits, wherein the voltage dividing resistor network is respectively connected with the input end of the error amplifier through a voltage dividing node, the T-shaped resistor network is respectively connected with two ends of the voltage dividing resistor network, the reference core generating circuit is triggered by the first driving level to work to generate two paths of working currents and output the two paths of working currents to the two triode circuits which are arranged in a differential mode, and the second driving level is output to the reference voltage output circuit so as to trigger the reference voltage output circuit to output reference currents and reference voltages;
the voltage dividing resistor network is used for reducing the differential input voltage of the error amplifier;
the T-shaped resistor network is used for reducing offset voltage of the reference voltage;
the high-order temperature compensation circuit is used for synchronously generating logarithmic current when the reference core generation circuit generates working current and counteracting high-order nonlinear items in the triode circuit, and the logarithmic current is in direct proportion to the temperature;
the high-temperature compensation circuit is used for triggering and conducting when the logarithmic current of the high-order temperature compensation circuit reaches a preset current so as to conduct high-temperature current compensation on the reference current generated by the reference voltage output circuit.
In one embodiment, the reference core generating circuit comprises a first electronic switch tube, a second electronic switch tube, a first triode circuit, a second triode circuit, a voltage dividing resistor network and a T-shaped resistor network, wherein the first triode circuit comprises a first triode, the second triode circuit comprises a first resistor and a second triode, the voltage dividing resistor network comprises a second resistor, a third resistor, a fourth resistor and a fifth resistor, and the T-shaped resistor network comprises a sixth resistor, a seventh resistor and an eighth resistor;
the source electrode of the first electronic switch tube and the source electrode of the second electronic switch tube are connected with a positive power supply end in a sharing mode, the grid electrode of the first electronic switch tube, the grid electrode of the second electronic switch tube, the output end of the error amplifier, the signal output end of the starting circuit, the controlled end of the high-order temperature compensation circuit and the controlled end of the reference voltage output circuit are connected with each other in a sharing mode, the drain electrode of the first electronic switch tube, the first end of the sixth resistor, the first end of the second resistor and the emitter electrode of the first triode are connected with each other in a sharing mode, the drain electrode of the second electronic switch tube, the first end of the seventh resistor, the first end of the fourth resistor and the first end of the first resistor are connected with each other in a sharing mode, the second end of the third resistor and the inverting input end of the error amplifier are connected with each other in a sharing mode, and the second end of the fourth resistor, the first end of the fifth resistor and the positive input end of the error amplifier are connected with each other in a sharing mode, and the drain electrode of the second resistor, the second end of the fourth resistor and the base electrode of the fourth resistor are connected with the third resistor and the eighth resistor are connected with each other in a sharing mode.
In one embodiment, the high-order temperature compensation circuit comprises a third electronic switching tube, a fourth electronic switching tube, a fifth electronic switching tube, a third triode and a ninth resistor;
the source electrode of the third electronic switching tube, the source electrode of the fourth electronic switching tube and the source electrode of the fifth electronic switching tube are connected together and are connected with a positive power supply end, the grid electrode of the third electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the third electronic switching tube, the emitter electrode of the third triode, the drain electrode of the fifth electronic switching tube and the drain electrode of the second electronic switching tube are connected together, the grid electrode of the fourth electronic switching tube, the base electrode of the third triode, the first end of the ninth resistor and the grid electrode of the fifth electronic switching tube are connected together, and the collector electrode of the third triode and the second end of the ninth resistor are grounded.
In one embodiment, the high temperature compensation circuit includes a sixth electronic switching tube, a seventh electronic switching tube, an eighth electronic switching tube, and a tenth resistor;
the source electrode of the sixth electronic switching tube is connected with the positive power supply end, the grid electrode of the sixth electronic switching tube is connected with the grid electrode of the fifth electronic switching tube, the drain electrode of the sixth electronic switching tube, the first end of the tenth resistor, the grid electrode of the seventh electronic switching tube and the grid electrode of the eighth electronic switching tube are connected together, the drain electrode of the seventh electronic switching tube is connected with the drain electrode of the second electronic switching tube, the source electrode of the seventh electronic switching tube is connected with the drain electrode of the eighth electronic switching tube, and the source electrode of the eighth electronic switching tube is grounded.
In one embodiment, the high temperature compensation circuit further comprises a diode, wherein a cathode of the diode is connected with a drain electrode of the seventh electronic switching tube, and an anode of the diode is grounded.
In one embodiment, the reference voltage output circuit includes a ninth electronic switching tube and an eleventh resistor;
the source electrode of the ninth electronic switching tube is connected with the positive power end, the grid electrode of the ninth electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the ninth electronic switching tube is commonly connected with the first end of the eleventh resistor to form the output end of the reference voltage output circuit, and the second end of the eleventh resistor is grounded.
In one embodiment, the start-up circuit includes a tenth electronic switching tube, an eleventh electronic switching tube, a twelfth electronic switching tube, and a thirteenth electronic switching tube;
the source electrode of the tenth electronic switching tube is connected with the positive power supply end, the grid electrode of the tenth electronic switching tube is grounded, the drain electrode of the tenth electronic switching tube is connected with the source electrode of the eleventh electronic switching tube, the grid electrode of the twelfth electronic switching tube and the drain electrode of the thirteenth electronic switching tube are commonly connected, the grid electrode of the thirteenth electronic switching tube is used for receiving starting voltage, the source electrode of the thirteenth electronic switching tube and the source electrode of the twelfth electronic switching tube are grounded, and the drain electrode of the twelfth electronic switching tube forms a signal output end of the starting circuit.
In one embodiment, the ratio of the width to the length of the first electronic switching tube, the ratio of the width to the length of the second electronic switching tube, the ratio of the width to the length of the third electronic switching tube, and the ratio of the width to the length of the ninth electronic switching tube are equal.
In one embodiment, the ratio of the width to the length of the fourth electronic switching tube, the ratio of the width to the length of the fifth electronic switching tube, and the ratio of the width to the length of the sixth electronic switching tube are equal.
A second aspect of an embodiment of the present invention provides an electronic device, including a bandgap reference voltage source with low offset at low temperature drift and low voltage as described above.
Compared with the prior art, the embodiment of the invention has the beneficial effects that: the bandgap reference voltage source with low temperature drift and low voltage offset is provided with a high-order temperature compensation circuit to generate logarithmic characteristic current to directly offset high-order nonlinear items in the triode circuit so as to realize high-order temperature compensation, meanwhile, the working current with positive temperature characteristic is utilized to control the high-temperature compensation circuit to be started for shunting, the problem that the reference voltage is increased due to the fact that the proportion of the nonlinear items in a high-temperature stage is greatly increased to cause the increase of the reference current is solved, meanwhile, a T-shaped resistor network is increased to reduce the offset of the reference voltage, the output precision of the reference voltage is improved, a voltage dividing resistor network is increased, the differential input voltage of an error amplifier is reduced, the reference voltage is ensured to work under lower power supply voltage, and the voltage working range of the bandgap reference voltage source is expanded.
Drawings
FIG. 1 is a schematic diagram of a conventional bandgap reference voltage source;
fig. 2 is a schematic circuit structure diagram of a bandgap reference voltage source with low offset at low temperature and low voltage.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present invention, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
The first aspect of the embodiment of the invention provides a band-gap reference voltage source with low temperature drift, low voltage and low offset.
As shown in fig. 1, fig. 1 is a schematic circuit diagram of a bandgap reference voltage source with low offset at low temperature and low drift voltage according to an embodiment of the present invention, where in this embodiment, the bandgap reference voltage source includes a start-up circuit 10, a reference core generating circuit 20, a high-order temperature compensating circuit 30, a high-temperature compensating circuit 40, and a reference voltage output circuit 50;
a start-up circuit 10 that generates a first drive level to the reference core generation circuit 20 when the power supply voltage is powered on;
the reference core generating circuit 20 comprises an error amplifier U1, a voltage dividing resistor network respectively connected with the input end of the error amplifier U1 through voltage dividing nodes, a T-shaped resistor network 21 and two triode circuits respectively connected with two ends of the voltage dividing resistor network, the reference core generating circuit 20 is triggered by a first driving level to work to generate two paths of working currents and output the two paths of working currents to the two triode circuits which are arranged in a differential mode, and a second driving level is output to the reference voltage output circuit 50 to trigger the reference voltage output circuit 50 to output a reference current IREF and a reference voltage VREF;
a voltage dividing resistor network for reducing the differential input voltage of the error amplifier U1, including a first voltage dividing resistor network 221 and a second voltage dividing resistor network 222 connected to the two triode circuits respectively;
a T-type resistor network 21 for reducing an offset voltage of the reference voltage VREF;
the high-order temperature compensation circuit 30 is used for synchronously generating logarithmic current when the reference core generating circuit 20 generates working current and counteracting high-order nonlinear items in the triode circuit, wherein the logarithmic current is in direct proportion to the temperature;
the high temperature compensation circuit 40 is used for triggering to conduct when the logarithmic current of the high-order temperature compensation circuit 30 reaches the preset current, so as to perform high temperature current compensation on the reference current IREF generated by the reference voltage output circuit 50.
In this embodiment, the differential triode circuit has the same structure as the conventional circuit, and when the two triode circuits work at different current densities, the difference of voltages between the base and emitter of the two triode circuits is proportional to absolute temperature, and Δvbe has a positive temperature coefficient, and a band gap reference voltage with zero temperature coefficient is generated by a certain proportion.
Meanwhile, in order to improve the output precision of the reference voltage VREF, the voltage between the base electrode and the emitter electrode of the triode circuit is clamped by the differential input of the error amplifier U1, and the mismatch of the circuit is reduced.
However, since the differential triode circuit only compensates the first-order temperature term of the reference voltage VREF, the temperature compensation is not performed on the high-order nonlinear term, the temperature coefficient of the differential triode circuit is generally limited within 20 ppm-100 ppm/°c due to the interference of the high-order nonlinear term, in order to solve the problem, the high-order temperature compensation circuit 30 is arranged in the bandgap reference voltage source, another triode circuit is arranged in the high-order temperature compensation circuit 30 based on the logarithmic compensation technical principle of the bandgap reference voltage source, the logarithmic current is generated on the resistor by utilizing the voltage difference between the base and the emitter of the triode, and the VBE high-order nonlinear term in the original triode circuit is directly counteracted, so that the high-order temperature compensation on the reference voltage VREF is realized.
In addition, at high temperature, the proportion of the nonlinear term of VBE in the high temperature stage is greatly increased, which causes the proportion of the positive temperature coefficient current of the reference current IREF to be increased, and the reference voltage VREF is higher.
And the bandgap reference voltage source is easy to be subjected to the problem that the error amplifier U1 cannot work normally due to overlarge threshold voltage of an internal transistor, mismatch is increased, and output precision of the reference voltage VREF is affected.
Each circuit structure may be correspondingly arranged according to a functional requirement, as shown in fig. 2, optionally, the reference core generating circuit 20 includes a first electronic switch tube M1, a second electronic switch tube M2, a first triode circuit, a second triode circuit, a voltage dividing resistor network and a T-type resistor network 21, the first triode circuit includes a first triode Q1, the second triode circuit includes a first resistor R1 and a second triode Q2, the voltage dividing resistor network includes a second resistor R2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5, and the T-type resistor network 21 includes a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8;
the source of the first electronic switch M1 is commonly connected with the source of the second electronic switch M2 and is connected with the positive power supply terminal VDD, the gate of the first electronic switch M1, the gate of the second electronic switch M2, the output terminal of the error amplifier U1, the signal output terminal of the start-up circuit 10, the controlled terminal of the high-order temperature compensation circuit 30 and the controlled terminal of the reference voltage output circuit 50 are commonly connected, the drain of the first electronic switch M1, the first terminal of the sixth resistor R6, the first terminal of the second resistor R2 and the emitter of the first triode Q1 are commonly connected, the drain of the second electronic switch M2, the first terminal of the seventh resistor R7, the first terminal of the fourth resistor R4 and the first terminal of the first resistor R1 are commonly connected, the second terminal of the third resistor R3 and the inverting input terminal of the error amplifier U1 are commonly connected, the second terminal of the fourth resistor R4, the first terminal of the fifth resistor R5 and the positive phase input terminal of the error amplifier U1 are commonly connected, the drain of the second electronic switch M2, the first terminal of the first resistor R7 and the first terminal of the third resistor R2 are commonly connected with the base of the third resistor R8, the third resistor R2 and the third resistor Q2 are commonly connected.
The high-order temperature compensation circuit 30 comprises a third electronic switching tube M3, a fourth electronic switching tube M4, a fifth electronic switching tube M5, a third triode Q3 and a ninth resistor R9;
the source electrode of the third electronic switching tube M3, the source electrode of the fourth electronic switching tube M4 and the source electrode of the fifth electronic switching tube M5 are commonly connected and connected with a positive power supply end VDD, the grid electrode of the third electronic switching tube M3 is connected with the output end of the error amplifier U1, the drain electrode of the third electronic switching tube M3, the emitter electrode of the third triode Q3, the drain electrode of the fifth electronic switching tube M5 and the drain electrode of the second electronic switching tube M2 are commonly connected, the grid electrode of the fourth electronic switching tube M4, the base electrode of the third triode Q3, the first end of the ninth resistor R9 and the grid electrode of the fifth electronic switching tube M5 are commonly connected, and the collector electrode of the third triode Q3 and the second end of the ninth resistor R9 are grounded.
The high-temperature compensation circuit 40 includes a sixth electronic switching tube M6, a seventh electronic switching tube M7, an eighth electronic switching tube M8, and a tenth resistor R10;
the source electrode of the sixth electronic switching tube M6 is connected with the positive power supply end VDD, the grid electrode of the sixth electronic switching tube M6 is connected with the grid electrode of the fifth electronic switching tube M5, the drain electrode of the sixth electronic switching tube M6, the first end of the tenth resistor R10, the grid electrode of the seventh electronic switching tube M7 and the grid electrode of the eighth electronic switching tube M8 are commonly connected, the drain electrode of the seventh electronic switching tube M7 is connected with the drain electrode of the second electronic switching tube M2, the source electrode of the seventh electronic switching tube M7 is connected with the drain electrode of the eighth electronic switching tube M8, and the source electrode of the eighth electronic switching tube M8 is grounded.
The high temperature compensation circuit 40 further includes a diode D1, a cathode of the diode D1 is connected to a drain of the seventh electronic switching tube M7, and an anode of the diode D1 is grounded.
The reference voltage output circuit 50 includes a ninth electronic switching tube M9 and an eleventh resistor R11;
the source electrode of the ninth electronic switching tube M9 is connected with the positive power supply end VDD, the grid electrode of the ninth electronic switching tube M9 is connected with the output end of the error amplifier U1, the drain electrode of the ninth electronic switching tube M9 is commonly connected with the first end of the eleventh resistor R11 to form the output end of the reference voltage output circuit 50, and the second end of the eleventh resistor R11 is grounded.
The start-up circuit 10 includes a tenth electronic switching tube M10, an eleventh electronic switching tube M11, a twelfth electronic switching tube M12, and a thirteenth electronic switching tube M13;
the source electrode of the tenth electronic switching tube M10 is connected with the positive power supply end VDD, the grid electrode of the tenth electronic switching tube M10 is grounded, the drain electrode of the tenth electronic switching tube M10 is connected with the source electrode of the eleventh electronic switching tube M11, the grid electrode of the twelfth electronic switching tube M12 and the drain electrode of the thirteenth electronic switching tube M13 are commonly connected, the grid electrode of the thirteenth electronic switching tube M13 is used for receiving starting voltage, the source electrode of the thirteenth electronic switching tube M13 and the source electrode of the twelfth electronic switching tube M12 are grounded, and the drain electrode of the twelfth electronic switching tube M12 forms a signal output end of the starting circuit 10.
In this embodiment, the tenth electronic switching tube M10 to the thirteenth electronic switching tube M13 form the start-up circuit 10, when the power supply starts to be powered on, the start-up voltage is low, the gate voltages of the first electronic switching tube M1 and the second electronic switching tube M2 are high, the thirteenth electronic switching tube M13 is turned off, the twelfth electronic switching tube M12 is turned on, the gate voltages of the first electronic switching tube M1 and the second electronic switching tube M2 are pulled down, the reference voltage VREF starts to establish a steady state, the start-up voltage is pulled high, the thirteenth electronic switching tube M13 is turned on, the twelfth electronic switching tube M12 is turned off, the start-up of the reference voltage VREF is completed, the ninth electronic switching tube M9 is controlled to be turned on and outputs the normal reference voltage VREF.
The T-type resistor network 21 is composed of a sixth resistor R6, a seventh resistor R7, and an eighth resistor R8, and as can be seen from the Dai Weining theorem and the node voltage and current equations, the equivalent impedance of the seventh resistor R7 and the eighth resistor R8 is:
R0＝R7+2*R8 (1)
wherein, R7 is the impedance of the seventh resistor, and R8 is the impedance of the eighth resistor.
In one embodiment, the ratio of the width to the length of the first electronic switching tube M1, the ratio of the width to the length of the second electronic switching tube M2, the ratio of the width to the length of the third electronic switching tube M3, and the ratio of the width to the length of the ninth electronic switching tube M9 are equal, the impedance of the second resistor R2 and the fourth resistor R4 are equal, and the impedance of the third resistor R3 and the fifth resistor R5 are equal, so i0=i1=iref, n1 is the ratio of the second triode Q2 and the first triode Q1, and thus the reference voltage VREF of the bandgap reference voltage source is (without a high order temperature compensation module):
VREF＝IREF*R11 (2)
IREF is a reference current flowing through the eleventh resistor R11.
From equations (1) and (2) it is possible to obtain:
wherein V is EB_Q1 V is the voltage difference between the emitter and the base of the first triode Q1 T lnn1 it is a high-order nonlinear term of the triode circuit, R1 is a first resistor, R2 is a second resistor, R3 is a third resistor, R7 is a seventh resistor, R8 is an eighth resistor, and R11 is an eleventh resistor.
The mismatch voltage VOS of the reference voltage VREF is mainly caused by the local mismatch of the threshold voltage in the transistor, and the mismatch voltage VOS on the band of equation (3) is obtained:
compared with the traditional band gap reference voltage source, the scale factor R11/R1 in the formula (4) is smaller than the scale factor (1+R2/R1) in the traditional band gap reference voltage source, and the mismatch of the reference voltage VREF is reduced by adjusting the scale factor R11/R1, so that the output precision of the reference voltage VREF is improved.
Meanwhile, as shown in fig. 1, the conventional structure needs to adopt a larger power supply voltage to ensure the normal operation of the whole circuit, but the larger power supply voltage can cause larger power consumption, and the current low-voltage operation requirement is difficult to meet. As shown in fig. 2, in this embodiment, by adding the voltage dividing resistor network formed by the second resistor R2, the third resistor R3, the fourth resistor R4 and the fifth resistor R5, the differential input voltage of the error amplifier U1 is reduced, and compared with the conventional bandgap reference structure, the lower differential input voltage can ensure that the bandgap reference voltage source works at a lower power supply voltage, and the working voltage range of the bandgap reference voltage source is expanded.
Meanwhile, based on the principle of the logarithmic compensation technique, a high-order temperature compensation circuit 30 is provided, the compensation principle of which is: the voltage difference of the base-emitter electrode of the third triode Q3 is utilized to act on the ninth resistor R9 to generate current with logarithmic characteristics, and the high-order nonlinear term TlnT in the voltage difference of the base-emitter electrode of the second triode Q2 is directly counteracted.
The specific deduction process is as follows:
from equations (5) and (6) it is possible to obtain:
wherein I is NL For logarithmic current flowing through the ninth resistor R9, i0=iref, IPTAT is the current flowing through the first resistor R1 and has a positive temperature coefficient with temperature. k. q, n1, etc. are constants independent of temperature.
From equation (7), the current I is known NL The higher order nonlinear term TlnT in the reference voltage VREF can be directly compensated for in relation to the temperature logarithm. Adding formula (3) to I NL After the current, the reference voltage VREF after compensation is obtained as follows:
order the
The formula can be abbreviated as:
wherein:
where VGO is absolute zero, the extrapolated bandgap voltage of silicon is about 1.176V, tr is the reference temperature, VBE (Tr) is the base-emitter voltage at the reference temperature, η is a process-related temperature-independent variable, δ is the collector temperature factor, q is the electron charge, and k is the Boltzmann coefficient.
According to formulas (9) and (10), other parameters are determined values except that each resistor is a variable, namely, the proportional relation of each resistor can be adjusted to enable L1 and L2 to be zero, and the high-order compensation in the low-temperature stage is completed.
Meanwhile, at a high temperature, the reference voltage VREF becomes large, and when the high-order compensation at the low temperature stage cannot be completely compensated to the high temperature stage, the reference voltage VREF is shifted in temperature drift, and in order to solve this problem, a high temperature compensation circuit 40 is provided, in which the width and length ratio of the fourth electronic switching tube M4, the width and length ratio of the fifth electronic switching tube M5, and the width and length ratio of the sixth electronic switching tube M6 are equal.
From the above, I NL The node voltage VC of the tenth resistor R10 is high with the rise of temperature when the temperature rises and is positive temperature coefficient when the voltage is raised to the threshold voltage of the seventh electronic switch tube M7 and the eighth electronic switch tube M8The seventh electronic switching tube M7 and the eighth electronic switching tube M8 are conducted, partial current of the reference current passes through the seventh electronic switching tube M7 and the eighth electronic switching tube M8 to the ground, the reference voltage VREF is reduced, and high-temperature compensation is achieved.
Meanwhile, considering that the threshold voltages of the seventh electronic switching tube M7 and the eighth electronic switching tube M8 are affected by process and temperature changes, when the current high-temperature compensation circuit 40 is adopted and better compensation characteristics under the whole PVT are difficult to consider, the high-temperature compensation circuit 40 is further provided with a diode D1, reverse leakage current of the reversely arranged diode D1 is increased in a high-temperature stage, reference voltage VREF is reduced, and a high-temperature compensation function is further realized.
In one embodiment, the first electronic switch tube M1, the second electronic switch tube M2, the third electronic switch tube M3, the fourth electronic switch tube M4, the fifth electronic switch tube M5, the sixth electronic switch tube M6, the ninth electronic switch tube M9, the tenth electronic switch tube M10 and the eleventh electronic switch tube M11 are PMOS tubes according to the conduction mode of each electronic switch tube.
The seventh electronic switching tube M7, the eighth electronic switching tube M8, the twelfth electronic switching tube M12 and the thirteenth electronic switching tube M13 are all NMOS tubes.
The invention also provides an electronic device, which comprises a band-gap reference voltage source with low offset of low temperature drift and low voltage, and the specific structure of the band-gap reference voltage source with low offset of low temperature drift and low voltage refers to the above embodiment.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention, and are intended to be included in the scope of the present invention.
Claims (6)
1. The band-gap reference voltage source with low temperature drift, low voltage and offset is characterized by comprising a starting circuit, a reference core generating circuit, a high-order temperature compensating circuit, a high-temperature compensating circuit and a reference voltage output circuit;
the starting circuit generates a first driving level to the reference core generating circuit when the power supply voltage is electrified;
the reference core generating circuit comprises an error amplifier, a voltage dividing resistor network, a T-shaped resistor network and two triode circuits, wherein the voltage dividing resistor network is respectively connected with the input end of the error amplifier through a voltage dividing node, the T-shaped resistor network is respectively connected with two ends of the voltage dividing resistor network, the reference core generating circuit is triggered by the first driving level to work to generate two paths of working currents and output the two paths of working currents to the two triode circuits which are arranged in a differential mode, and the second driving level is output to the reference voltage output circuit so as to trigger the reference voltage output circuit to output reference currents and reference voltages;
the voltage dividing resistor network is used for reducing the differential input voltage of the error amplifier;
the T-shaped resistor network is used for reducing offset voltage of the reference voltage;
the high-order temperature compensation circuit is used for synchronously generating logarithmic current when the reference core generation circuit generates working current and counteracting high-order nonlinear items in the triode circuit, and the logarithmic current is in direct proportion to the temperature;
the high-temperature compensation circuit is used for triggering conduction when logarithmic current of the high-order temperature compensation circuit reaches preset current so as to conduct high-temperature current compensation on the reference current generated by the reference voltage output circuit;
the reference core generating circuit comprises a first electronic switch tube, a second electronic switch tube, a first triode circuit, a second triode circuit, a voltage dividing resistor network and a T-shaped resistor network, wherein the first triode circuit comprises a first triode, the second triode circuit comprises a first resistor and a second triode, the voltage dividing resistor network comprises a second resistor, a third resistor, a fourth resistor and a fifth resistor, and the T-shaped resistor network comprises a sixth resistor, a seventh resistor and an eighth resistor;
the source electrode of the first electronic switch tube and the source electrode of the second electronic switch tube are connected with a positive power supply end in a sharing way, the grid electrode of the first electronic switch tube, the grid electrode of the second electronic switch tube, the output end of the error amplifier, the signal output end of the starting circuit, the controlled end of the high-order temperature compensation circuit and the controlled end of the reference voltage output circuit are connected with each other in a sharing way, the drain electrode of the first electronic switch tube, the first end of the sixth resistor, the first end of the second resistor and the emitter electrode of the first triode are connected with each other in a sharing way, the drain electrode of the second electronic switch tube, the first end of the seventh resistor, the first end of the fourth resistor and the first end of the first resistor are connected with each other in a sharing way, the second end of the third resistor and the inverting input end of the error amplifier are connected with each other in a sharing way, and the second end of the fourth resistor, the first end of the fifth resistor and the positive input end of the error amplifier are connected with each other in a sharing way, and the drain electrode of the second resistor, the first end of the fourth resistor and the base electrode of the fourth resistor are connected with the third resistor and the fourth resistor are connected with each other in a sharing way;
the high-order temperature compensation circuit comprises a third electronic switching tube, a fourth electronic switching tube, a fifth electronic switching tube, a third triode and a ninth resistor;
the source electrode of the third electronic switching tube, the source electrode of the fourth electronic switching tube and the source electrode of the fifth electronic switching tube are connected together and are connected with a positive power supply end, the grid electrode of the third electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the third electronic switching tube, the emitter electrode of the third triode, the drain electrode of the fifth electronic switching tube and the drain electrode of the second electronic switching tube are connected together, the grid electrode of the fourth electronic switching tube, the base electrode of the third triode, the first end of the ninth resistor and the grid electrode of the fifth electronic switching tube are connected together, and the collector electrode of the third triode and the second end of the ninth resistor are grounded;
the high-temperature compensation circuit comprises a sixth electronic switching tube, a seventh electronic switching tube, an eighth electronic switching tube and a tenth resistor;
the source electrode of the sixth electronic switching tube is connected with the positive power supply end, the grid electrode of the sixth electronic switching tube is connected with the grid electrode of the fifth electronic switching tube, the drain electrode of the sixth electronic switching tube, the first end of the tenth resistor, the grid electrode of the seventh electronic switching tube and the grid electrode of the eighth electronic switching tube are commonly connected, the drain electrode of the seventh electronic switching tube is connected with the drain electrode of the second electronic switching tube, the source electrode of the seventh electronic switching tube is connected with the drain electrode of the eighth electronic switching tube, and the source electrode of the eighth electronic switching tube is grounded;
the high-temperature compensation circuit further comprises a diode, wherein the cathode of the diode is connected with the drain electrode of the seventh electronic switching tube, and the anode of the diode is grounded.
2. The low temperature drift low voltage low offset bandgap reference voltage source of claim 1, wherein said reference voltage output circuit comprises a ninth electronic switching tube and an eleventh resistor;
the source electrode of the ninth electronic switching tube is connected with the positive power end, the grid electrode of the ninth electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the ninth electronic switching tube is commonly connected with the first end of the eleventh resistor to form the output end of the reference voltage output circuit, and the second end of the eleventh resistor is grounded.
3. The low temperature drift low voltage low offset bandgap reference voltage source of claim 1, wherein said start-up circuit comprises a tenth electronic switching tube, an eleventh electronic switching tube, a twelfth electronic switching tube, and a thirteenth electronic switching tube;
the source electrode of the tenth electronic switching tube is connected with the positive power supply end, the grid electrode of the tenth electronic switching tube is grounded, the drain electrode of the tenth electronic switching tube is connected with the source electrode of the eleventh electronic switching tube, the grid electrode of the twelfth electronic switching tube and the drain electrode of the thirteenth electronic switching tube are commonly connected, the grid electrode of the thirteenth electronic switching tube is used for receiving starting voltage, the source electrode of the thirteenth electronic switching tube and the source electrode of the twelfth electronic switching tube are grounded, and the drain electrode of the twelfth electronic switching tube forms a signal output end of the starting circuit.
4. The low temperature drift low voltage low offset bandgap reference voltage source of claim 2, wherein said first electronic switching tube width to length ratio, said second electronic switching tube width to length ratio, said third electronic switching tube width to length ratio, and said ninth electronic switching tube width to length ratio are equal.
5. The low temperature drift low voltage low offset bandgap reference voltage source of claim 1, wherein a ratio of width to length of a fourth electronic switching tube, a ratio of width to length of a fifth electronic switching tube, and a ratio of width to length of said sixth electronic switching tube are equal.
6. An electronic device comprising a bandgap reference voltage source of low temperature drift and low voltage offset as claimed in any one of claims 1 to 5.
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| CN102323842A (en) * | 2011-05-13 | 2012-01-18 | 电子科技大学 | Band-gap voltage reference source for high-order temperature compensation |
| CN108052150A (en) * | 2017-12-14 | 2018-05-18 | 上海艾为电子技术股份有限公司 | A kind of bandgap voltage reference with source compensated by using high-order curvature |
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| CN109725672B (en) * | 2018-09-05 | 2023-09-08 | 南京浣轩半导体有限公司 | Band gap reference circuit and high-order temperature compensation method |
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