CN113721694B - Self-compensating band gap reference source structure based on curvature function and application thereof - Google Patents
Self-compensating band gap reference source structure based on curvature function and application thereof Download PDFInfo
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Abstract
The invention discloses a self-compensating band-gap reference source structure based on curvature function and application thereof1Is connected to one end of a resistorR1The other end of the first and second transistors is connected with an operational amplifier through a field effect transistor, and the reference voltage V of the band-gap reference source is reduced by utilizing the nonlinearity of the current gain beta of the bipolar transistorREFThe temperature coefficient of (a). The temperature coefficient of the reference voltage is greatly reduced by utilizing the nonlinearity of the current gain beta of the BJT. Meanwhile, the band gap reference source of the invention uses a self-compensation structure, an additional temperature compensation circuit is not needed, the temperature compensation is directly realized in a core circuit of the band gap reference source, the structure is simple, and the influence brought by process errors is reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuits, and particularly relates to a curvature function-based self-compensation band gap reference source structure and application thereof.
Background
Bandgap reference sources are commonly used in a variety of analog, digital, and analog-to-digital hybrid circuits to provide high precision voltage biasing. The temperature coefficient is a core index of the bandgap reference source, and the smaller the variation of the output voltage of the bandgap reference source along with the temperature is, the lower the temperature coefficient is.
The basic principle of realizing the low-temperature coefficient band-gap reference source is that a voltage with an approximate zero temperature coefficient is generated by superposing a voltage with a negative temperature coefficient and a voltage with a positive temperature coefficient. Base-emitter voltage V of bipolar transistor in band-gap reference circuitBEThe negative temperature coefficient is generally-2 to-1.5 mV/DEG C. The base-emitter voltages of two bipolar transistors with different current densities are different, and the voltage difference is DeltaVBEHas a positive temperature coefficient. The temperature coefficient is superposed on the base-emitter voltage of the bipolar transistor in a certain proportion for compensation, and then the reference voltage with a lower temperature coefficient can be obtained. In general, VBEThe function with respect to the temperature T is abbreviated as follows:
wherein, TrIs the reference temperature. VG0Which is the bandgap voltage of silicon at 0K, can be considered as a constant. Eta is a process-dependent constant, typically 3.6 to 4.4. From (1), V can be seenBE(T) the term related to the temperature T is a linear part in the second term and a higher order part in the third term.
A typical bandgap reference source uses first order temperature compensation, i.e., the linear part of the second term in PTAT voltage compensation (1), with a temperature coefficient of tens of ppm/deg.c. With the increasing performance requirements of integrated circuits for bandgap references, the accuracy of output voltages of tens of ppm/c has not been satisfactory. Therefore, the nonlinear term in (1) is offset by high-order temperature compensation, so that a lower temperature coefficient is achieved. The existing high-order temperature compensation technology comprises exponential compensation, second-order curvature compensation, subthreshold compensation, segmented compensation and the like.
The exponential temperature compensation technology utilizes the rule that the current gain beta of the bipolar transistor is exponential along with the temperature change. At a reference output VREFAnd adding a term which has an exponential relation with the temperature, thereby eliminating the high-order term.
The second-order curvature temperature compensation technology obtains a current I which is secondarily related to the temperature through the drain-source current operation of different MOS tubesPTAT 2Compensating by adding this current to VREFAnd eliminating the influence of partial nonlinear terms.
The sub-threshold temperature compensation technology is used for compensating the reference voltage through an MOS tube biased at the sub-threshold. The voltage drop of the resistor is taken as V of the MOS by adding proper current to the resistorGSMaking MOS work in subthreshold region, the drain of MOS tube is connected to generate VBEThe magnitude of the extracted current changes nonlinearly with the temperature change, thereby reducing VREFThe temperature coefficient of (a).
The sectional temperature compensation technology is that the whole temperature interval is divided into a plurality of sections, and temperature compensation of different degrees is carried out in different sectional intervals, so that a very low temperature coefficient is obtained.
The existing temperature compensation technology needs to add an additional compensation circuit, which results in increased circuit complexity, and the effect of temperature compensation is deteriorated due to the influence of process deviation on the additional compensation circuit. Exponential compensation, second order curvature compensation and subthreshold compensation hardly reduce the temperature coefficient below 3 ppm/DEG C. The segmented temperature compensation technology can reduce the temperature coefficient to be very low, but the structure is the most complex, and the influence of process deviation is the largest, so that the actually tested temperature coefficient can hardly reach the simulation level.
Disclosure of Invention
The invention aims to solve the technical problem of providing a self-compensating band gap reference source structure based on a curvature function and application thereof aiming at the defects in the prior art, wherein the temperature coefficient of the reference voltage of the band gap reference source is reduced by utilizing the nonlinearity of the current gain beta of a bipolar transistor, so that the structure is high in precision, low in temperature coefficient and simple and easy.
The invention adopts the following technical scheme:
a self-compensation band gap reference source structure based on a curvature function comprises two bipolar transistors, wherein one ends of the bipolar transistors are connected with the ground in common, and the other ends of the bipolar transistors are connected with a resistor R after passing through corresponding resistors respectively1Is connected to a resistor R1The other end of the first and second transistors is connected with an operational amplifier through a field effect transistor, and the reference voltage V of the band-gap reference source is reduced by utilizing the nonlinearity of the current gain beta of the bipolar transistorREFThe temperature coefficient of (a).
Specifically, the bipolar transistor comprises a transistor Q1And a triode Q2Resistance R1One end of (1) is divided into three paths, and one path passes through a resistor mR2And a triode Q1Is connected with the collector of the first path through a resistor R2Respectively connected with a triode Q1Base and triode Q2Is connected with the collector of the triode Q2Base electrode of the transistor Q1Emitter and triode Q2Is connected to common ground.
Further, a triode Q1The resistance of the branch is triode Q2The branch resistance is m times.
Further, m is 2.5 to 3.2.
Further, a reference voltage VREFThe function with temperature T is as follows:
wherein C is a constant, eta is a process factor, delta is a parameter related to the triode current, k is a Boltzmann constant, Q is an electronic charge amount, and m is a triode Q1The resistance of the branch is triode Q2Multiple of branch resistance, n being triode Q1And triode Q2Area ratio of (1), beta0、β1、β2Is a constant.
Further, the reference voltage VREFComprises the following steps:
wherein, VBE2Is a triode Q2Base-emitter voltage of.
Further, a triode Q1And a triode Q2The area ratio of (a) to (b) is n: 1.
specifically, the source of the field effect transistor is connected with the power supply VDD, the gate of the field effect transistor is connected with the output of the operational amplifier, the drain of the field effect transistor and the resistor R1Is connected at one end.
Specifically, the temperature coefficient of the self-compensating band gap reference source structure at-40 ℃ to 125 ℃ is 1.8 ppm/DEG C.
The invention has another technical scheme that the self-compensating band-gap reference source structure based on the curvature function can be applied to the integrated circuit with low temperature coefficient.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention relates to a self-compensating band gap reference source structure based on a curvature function, which utilizes a triode Q2Voltage of base-emitter level VBENegative temperature characteristic and triode Q1、Q2Of the base-emitter voltage difference DeltaVBEGenerates a bandgap reference voltage and couples V through a resistor R1 and a resistor R2BEAnd Δ VBEIs regulated by a transistor Q1And Q2Non-linearity of the current gain beta versus the reference voltage VREFCurvature temperature compensation is performed to greatly reduce VREFThe op-amp clamps the A, B nodes of fig. 1 to equalize the voltage at the nodes.
Further, according to a triode Q1And a triode Q2Connection relation of (2), Q1And Q2Base current of (2) flows into (R)1Thereby to the reference voltage VREFHas an influence on changing VREFThereby introducing a triode Q into the expression1And Q2By the non-linearity of beta, can be applied to VREFAnd performing high-order temperature compensation.
Further, a triode Q1The resistance of the branch is triode Q2The resistance of the branch circuit is m times, thus changing the current of the two branch circuits, namely changing the triode Q1And a triode Q2So that m is introduced into the reference voltage VREFBy adjusting the size of m, V can be optimizedREFThe temperature coefficient of (a).
Further, when m is 2.5 to 3.2, VREFWith respect to the fact that the derivative of the temperature T is equal to 0 at two temperature points within the interval of-40 ℃ to 125 ℃, V is known from the mathematical relationshipREFThe temperature coefficient of the temperature drift curve is lower as shown in fig. 2(d) with respect to T.
Further in accordance with
The function relation with T can control the influence effect of the parameter beta on the reference voltage by adjusting the magnitude of the variable m, thereby changing
The curve for T. By adjusting the shape of the curve, the reference voltage V can be optimizedREFTemperature characteristics of (1).
Further, a reference voltage VREFThe expression introduces variable m and parameter beta, so that the influence effect of the parameter beta on the reference voltage can be controlled by adjusting the magnitude of the variable m, high-order temperature compensation is carried out on the reference voltage, and the reduction is realizedIts temperature coefficient.
Further, a triode Q1And a triode Q2The area ratio of (a) to (b) is n: 1, base-emitter voltage V of triodeBEThe current density is related to the collector current density of the transistor, and the current density is related to the area of the transistor. When the current densities of the collectors of the two triodes are different, the base-emitter voltage V of the triodes isBEAlso, the difference between the base-emitter voltages of the two transistors is DeltaVBE，ΔVBEIs a positive temperature coefficient, so that the first-order temperature compensation is carried out on the output voltage.
Furthermore, the source electrode of the field effect transistor is connected with a power supply VDD, and the drain electrode of the field effect transistor is connected with a resistor R1Is connected such that the field effect transistor is a resistor R1、R2And a triode Q1、Q2Providing an electric current. The grid of the field effect transistor is connected with the output of the operational amplifier, so that the grid voltage of the field effect transistor can be adjusted by the output of the operational amplifier, and the current supplied by the field effect transistor is controlled.
Furthermore, the temperature coefficient of the self-compensating band-gap reference source structure based on the curvature function is 1.8 ppm/DEG C at-40-125 ℃, and when the ambient temperature is changed at-40-125 ℃, the change of the output voltage is very small, so that the influence on a high-performance integrated circuit system using the band-gap reference source is very small.
In summary, the present invention greatly reduces the temperature coefficient of the reference voltage by using the nonlinearity of the current gain β of the BJT. Meanwhile, the band gap reference source of the invention uses a self-compensation structure, an additional temperature compensation circuit is not needed, the temperature compensation is directly realized in a core circuit of the band gap reference source, the structure is simple, and the influence brought by process errors is reduced.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 is a bandgap core circuit diagram for generating a reference voltage;
FIG. 2 is a schematic diagram of the principle of the present invention for temperature self-compensation based on curvature function, wherein (a) is VREFDerivative of (a) with T(b) is V without high-order temperature compensationREFThe temperature drift curve of (c) is VREFAdding a curvature function to the expression of the derivative, wherein (d) is VREFTwo poles are generated on a temperature drift curve within the temperature range of-40 to 125 ℃;
fig. 3 is a graph of the temperature drift of the reference voltage of the bandgap reference source.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The invention provides a self-compensating band-gap reference source structure based on a curvature function, which greatly reduces the temperature coefficient of reference voltage by utilizing the nonlinearity of current gain beta of BJT. Meanwhile, the band gap reference source of the invention uses a self-compensation structure, an additional temperature compensation circuit is not needed, the temperature compensation is directly realized in a core circuit of the band gap reference source, the structure is simple, and the influence brought by process errors is reduced.
Referring to fig. 1, a curvature function based self-compensating bandgap reference source structure of the present invention uses high-order curvature temperature compensation and utilizes a triode Q1And a triode Q2Current gain beta of the non-linear compensation triode Q2Voltage of base-emitter level VBEThe non-linearity of the temperature sensor results in a more ideal temperature drift curve.
Resistance R1One end of the transistor is connected with the drain electrode of a field effect transistor, the source electrode of the field effect transistor is connected with a power supply VDD, the grid electrode of the field effect transistor is connected with the output of an operational amplifier, the non-inverting input of the operational amplifier is connected with A, the inverting input of the operational amplifier is connected with B, A is a triode Q1B is a triode Q2A collector electrode of (a); resistance R1The other end of the resistor is divided into three paths, one path is through a resistor mR2And a triode Q1Is connected with the collector of the first path through a resistor R2Respectively connected with a triode Q1Base and triode Q2Is connected with the collector of the triode Q2Base electrode of the transistor Q1Emitter and triode Q2Are connected to common ground.
In the structure of the band gap core circuit of fig. 1, a transistor Q1And a triode Q2The area ratio of (a) to (b) is n: 1.
in the structure of the band gap core circuit of fig. 1, a transistor Q1And a triode Q2Base current of (2) flows through a resistor R2Thereby introducing a parameter beta into the reference voltage VREFThe expression (c), which is a prerequisite for the implementation of temperature compensation; and for more effective temperature compensation, the transistor Q is made1The resistance of the branch is triode Q2And the size of the branch circuit resistance is m times, so that a parameter m is introduced, and the temperature coefficient is optimized by adjusting the size of m.
The specific principle is as follows:
triode Q2Voltage of base-emitter level VBEThe expression regarding the absolute temperature T is shown in formula (1), and the logarithmic term in formula (1) is subjected to taylor expansion:
neglecting the part of the absolute temperature T which is more than the second order term, and for VBE(T) derivation:
referring to fig. 1, in the bandgap reference source structure, if the base currents of the two triodes are not considered, the reference voltage V isREFThe expression of (a) is:
the derivation is taken for equation (4) and equation (3) is substituted:
wherein C is a constant.
The reference voltage V can be found from the formula (5)REFThe derivative of (c) with T is shown in FIG. 2(a), and thus V is not subjected to higher order temperature compensationREFThe temperature drift curve of (A) is shown in FIG. 2(b), in which T is0Is a reference voltage VREFZero of the derivative of (c).
The above is the reference voltage V when the base current of the triode is not consideredREFAnalysis of the relation of the derivative thereof to the temperature T; in the bandgap reference core circuit structure shown in fig. 1, the base current will be opposite to the reference voltage VREFThe effect is generated, and the base current is the key to introduce beta nonlinearity to carry out temperature self-compensation.
The base current versus reference voltage V is analyzed as followsREFThe specific effect produced, as shown in FIG. 1, consider a triode Q1And a triode Q2Base current of (2), then reference voltage VREFBecomes:
wherein beta is the bipolar triode Q used1And Q2Current gain of VBE2Is a triode Q2Base-emitter ofThe pressure, β, is also a function of the temperature T:
β＝β0+β1T+β2T2 (7)
wherein, beta0、β1、β2Is a constant.
The formula (6) is derived to obtain a reference voltage VREFAs a function of T:
wherein eta is a process factor, the numeric area is 3.6-4, delta is a parameter related to the current of the triode, k is a Boltzmann constant, Q is the amount of electronic charge, and m is the Q of the triode1The resistance of the branch is triode Q2Multiple of branch resistance, n being triode Q1And a triode Q2The area ratio of (a).
As is clear from a comparison of the formula (8) and the formula (5), the reference voltage V in the formula (8)REFThe expression of the derivative is equivalent to the reference voltage V in the expression (5)REFAdding a curvature function to the derivative expression, as shown in FIG. 2(c), by controlling the magnitude of the parameter m in FIG. 1, the reference voltage V is adjustedREFThe two zeros of the derivative are set at reasonable temperatures so that at the reference voltage VREFTwo poles are generated on the temperature drift curve within the temperature range of-40 to 125 ℃, as shown in FIG. 2(d), the temperature drift curve has a relatively low temperature coefficient.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Through simulation, when the value of m is between 2.5 and 3.2, the m is at two temperature points between 40 ℃ below zero and 125 DEG C
Is 0, the reference voltage VREFThe temperature coefficient of (a) is taken to a minimum.
The band gap reference source designed by the invention adopts a 0.18 mu m CMOS BCD process to carry out circuit design, carries out simulation verification, carries out simulation under cadence software, optimizes the shape of a temperature drift curve from a graph 2(b) to a graph 2(d) by adjusting the value of m, and reduces the temperature coefficient.
The curve of the output reference voltage of the band gap reference source designed by the invention changing with the temperature is shown in figure 3, and the temperature coefficient reaches 1.8 ppm/DEG C in the temperature range of minus 40-125 ℃.
In summary, the self-compensating bandgap reference source structure based on curvature function of the present invention performs temperature self-compensation based on curvature function on the reference voltage by using the nonlinearity of the current gain β of the BJT, and realizes a temperature coefficient of 1.8 ppm/deg.c within a temperature range of-40 deg.c to 125 deg.c.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (6)
1. A self-compensating band gap reference source structure based on a curvature function is characterized by comprising two bipolar transistors, wherein one ends of the bipolar transistors are connected with the ground in common, and the other ends of the bipolar transistors are respectively connected with a resistor R after passing through corresponding resistors1Is connected to a resistor R1Is connected to an operational amplifier via a field effect transistor, using a non-linear reduction of the current gain beta of the bipolar transistorBand-gap reference source reference voltage VREFTemperature coefficient of (d);
the source electrode of the field effect tube is connected with a power supply VDD, the grid electrode of the field effect tube is connected with the output of the operational amplifier, the drain electrode of the field effect tube and the resistor R1One end of the operational amplifier is connected with the non-inverting input of the operational amplifier A, the inverting input of the operational amplifier is connected with the non-inverting input of the operational amplifier B, and the non-inverting input of the operational amplifier A is connected with the inverting input of the operational amplifier B, A is a triode Q1B is a triode Q2A collector electrode of (a);
the bipolar transistor comprises a transistor Q1And triode Q2Resistance R1One end of (1) is divided into three paths, and one path passes through a resistor mR2And a triode Q1Is connected with the collector of the first path through a resistor R2Are respectively connected with a triode Q1Base and triode Q2Is connected with the collector of the triode Q2Base electrode of the transistor Q1Emitter and triode Q2Is connected to common ground;
reference voltage VREFThe function with temperature T is as follows:
wherein C is a constant, eta is a process factor, delta is a parameter related to the triode current, k is a Boltzmann constant, Q is an electronic charge amount, and m is a triode Q1The resistance of the branch is triode Q2Multiple of branch resistance, n being triode Q1And a triode Q2Area ratio of (1), beta0、β1、β2Is a constant;
reference voltage VREFComprises the following steps:
wherein, VBE2Is a triode Q2Base-emitter voltage of.
2. The method of claim 1The curvature function-based self-compensating band gap reference source structure is characterized in that a triode Q1The resistance of the branch is triode Q2The branch resistance is m times.
3. The curvature function-based self-compensating bandgap reference source structure according to claim 2, wherein m is 2.5-3.2.
4. The curvature function based self-compensating bandgap reference source structure of claim 1, wherein the transistor Q is a transistor1And a triode Q2The area ratio of (a) to (b) is n: 1.
5. the curvature function-based self-compensating bandgap reference structure according to any of claims 1 to 4, wherein the temperature coefficient of the self-compensating bandgap reference structure is 1.8ppm/° C from-40 ℃ to 125 ℃.
6. Use of a curvature function based self-compensating bandgap reference source structure as claimed in claim 1 in an integrated circuit.
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| US6407622B1 (en) * | 2001-03-13 | 2002-06-18 | Ion E. Opris | Low-voltage bandgap reference circuit |
| US8106707B2 (en) * | 2009-05-29 | 2012-01-31 | Broadcom Corporation | Curvature compensated bandgap voltage reference |
| CN102012715A (en) * | 2010-11-24 | 2011-04-13 | 天津泛海科技有限公司 | Band-gap reference voltage source compensated by using high-order curvature |
| CN102298413B (en) * | 2011-05-04 | 2014-02-19 | 四川大学 | Multi-transistor combination type curvature compensation bandgap low-voltage reference |
| CN103123512B (en) * | 2011-11-21 | 2015-03-25 | 联芯科技有限公司 | Band-gap reference circuit |
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| CN107943192A (en) * | 2018-01-05 | 2018-04-20 | 天津工业大学 | A kind of band-gap reference source circuit of superhigh precision |
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Inventor after: Geng Li Inventor after: Lv Cheng Inventor after: Shen Yunta Inventor after: Dong Li Inventor before: Geng Li Inventor before: Dong Li Inventor before: Lv Cheng Inventor before: Shen Yunta |