CN114489218A - Low-temperature drift low-voltage low-offset band-gap reference voltage source and electronic equipment - Google Patents
Low-temperature drift low-voltage low-offset band-gap reference voltage source and electronic equipment Download PDFInfo
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- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention provides a low-temperature drift low-voltage low-offset band-gap reference voltage source and electronic equipment, wherein the band-gap reference voltage source comprises a starting circuit, a reference core generating circuit, a high-order temperature compensating circuit, a high-temperature compensating circuit and a reference voltage output circuit, the high-order temperature compensating circuit generates currents with logarithmic characteristics, directly offsets high-order nonlinear terms in a triode circuit to realize high-order temperature compensation, controls the starting of the high-temperature compensating circuit by utilizing working currents with positive temperature characteristics to carry out shunting, reduces the problem that the proportion of the nonlinear terms in a high-temperature stage can be greatly increased to cause reference current increase to cause reference voltage increase, increases a T-shaped resistance network to reduce offset of the reference voltage, improves the output precision of the reference voltage, increases a voltage dividing resistance network, reduces differential input voltage of an error amplifier, and ensures that the reference voltage works under lower power supply voltage, and the voltage working range of the band-gap reference voltage source is expanded.
Description
Technical Field
The invention belongs to the technical field of reference voltage sources, and particularly relates to a low-temperature drift low-voltage low-offset band gap reference voltage source and electronic equipment.
Background
The reference voltage source has low temperature drift and high precision and is widely applied to analog and digital circuit systems. With the great reduction of the size of the semiconductor process, the current CMOS process needs to work under a lower power supply voltage, but the threshold value of the device is not greatly reduced along with the reduction of the size; on the other hand, in order to reduce the mismatch of the circuit, as shown in fig. 1, a conventional bandgap reference voltage source generally has an input terminal of an error amplifier to clamp the base-emitter voltage of a transistor. Then, when the power supply voltage is low, the conventional bandgap reference voltage source cannot ensure that the error amplifier works in a proper region under full process, full temperature and full voltage (PVT) due to the fact that the threshold voltage of the device is too high, and mismatch is caused to cause inaccuracy of the reference output voltage.
The conventional band-gap reference voltage source is represented as a negative temperature coefficient by using VBE voltage, when two triodes work at different current densities, the difference value of the voltages between the base electrode and the emitter electrode of the triodes is in direct proportion to absolute temperature, delta VBE has a positive temperature coefficient and generates band-gap reference voltage with zero temperature coefficient, the conventional band-gap reference voltage source only carries out first-order linear compensation, and the temperature drift coefficient of the conventional band-gap reference voltage source is limited to 20 ppm-100 ppm/DEG C due to the high-order nonlinear term of VBE. It is difficult to meet the current performance requirements of low temperature drift.
Disclosure of Invention
The invention aims to provide a low-temperature drift low-voltage low-offset band-gap reference voltage source, and aims to solve the problem that the traditional band-gap reference voltage source cannot realize low-temperature drift, low voltage and low offset.
The first aspect of the embodiment of the invention provides a low-temperature drift low-voltage low-offset band-gap reference voltage source, which comprises a starting circuit, a reference core generating circuit, a high-order temperature compensating circuit, a high-temperature compensating circuit and a reference voltage output circuit;
the starting circuit generates a first driving level to the reference core generating circuit when the power supply voltage is electrified;
the reference core generating circuit comprises an error amplifier, a voltage-dividing resistance network, a T-shaped resistance network and two triode circuits, wherein the voltage-dividing resistance network is respectively connected with the input end of the error amplifier through a voltage-dividing node, the T-shaped resistance network is respectively connected with two ends of the voltage-dividing resistance network, the reference core generating circuit is triggered by the first driving level to work to generate two paths of working currents and output the working currents to the two triode circuits which are arranged in a differential mode, and a second driving level is output to the reference voltage output circuit to trigger the reference voltage output circuit to output reference currents and reference voltages;
the voltage dividing resistor network is used for reducing the differential input voltage of the error amplifier;
the T-shaped resistance network is used for reducing offset voltage of the reference voltage;
the high-order temperature compensation circuit is used for synchronously generating logarithmic current when the reference core generating circuit generates working current and offsetting a high-order nonlinear term in the triode circuit, and the logarithmic current is in direct proportion to temperature;
the high-temperature compensation circuit is used for triggering and conducting when the logarithmic current of the high-order temperature compensation circuit reaches a preset current so as to perform high-temperature current compensation on the reference current generated by the reference voltage output circuit.
In one embodiment, the reference core generation circuit comprises a first electronic switch tube, a second electronic switch tube, a first triode circuit, a second triode circuit, a divider resistance network and a T-type resistance network, wherein the first triode circuit comprises a first triode, the second triode circuit comprises a first resistor and a second triode, the divider resistance network comprises a second resistor, a third resistor, a fourth resistor and a fifth resistor, and the T-type resistance network comprises a sixth resistor, a seventh resistor and an eighth resistor;
a source electrode of the first electronic switching tube and a source electrode of the second electronic switching tube are connected in common and are connected with a positive power supply end, a gate electrode of the first electronic switching tube, a gate electrode of the second electronic switching tube, an output end of the error amplifier, a signal output end of the starting circuit, a controlled end of the high-order temperature compensation circuit and a controlled end of the reference voltage output circuit are connected in common, a drain electrode of the first electronic switching tube, a first end of the sixth resistor, a first end of the second resistor and an emitter electrode of the first triode are connected in common, a drain electrode of the second electronic switching tube, a first end of the seventh resistor, a first end of the fourth resistor and a first end of the first resistor are connected in common, a second end of the second resistor, a first end of the third resistor and an inverting input end of the error amplifier are connected in common, a second end of the fourth resistor, a third end of the second resistor and a controlled end of the reference voltage output circuit are connected in common, The first end of the fifth resistor and the positive phase input end of the error amplifier are connected in common, the second end of the sixth resistor, the second end of the seventh resistor and the first end of the eighth resistor are connected in common, and the second end of the third resistor, the collector of the first triode, the base of the first triode, the second end of the eighth resistor, the second end of the fifth resistor, the collector of the second triode and the base of the second triode are connected in common and grounded.
In one embodiment, the high-order temperature compensation circuit comprises a third electronic switch tube, a fourth electronic switch tube, a fifth electronic switch tube, a third triode and a ninth resistor;
the source electrode of the third electronic switching tube, the source electrode of the fourth electronic switching tube and the source electrode of the fifth electronic switching tube are connected in common and are connected with a positive power supply end, the grid electrode of the third electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the third electronic switching tube, the emitter electrode of the third triode, the drain electrode of the fifth electronic switching tube and the drain electrode of the second electronic switching tube are connected in common, the grid electrode of the fourth electronic switching tube, the base electrode of the third triode, the first end of the ninth resistor and the grid electrode of the fifth electronic switching tube are connected in common, and the collector electrode of the third triode and the second end of the ninth resistor are grounded.
In one embodiment, the high temperature compensation circuit comprises a sixth electronic switch tube, a seventh electronic switch tube, an eighth electronic switch tube and a tenth resistor;
the source electrode of the sixth electronic switching tube is connected with the positive power supply end, the grid electrode of the sixth electronic switching tube is connected with the grid electrode of the fifth electronic switching tube, the drain electrode of the sixth electronic switching tube, the first end of the tenth resistor, the grid electrode of the seventh electronic switching tube and the grid electrode of the eighth electronic switching tube are connected in common, the drain electrode of the seventh electronic switching tube is connected with the drain electrode of the second electronic switching tube, the source electrode of the seventh electronic switching tube is connected with the drain electrode of the eighth electronic switching tube, and the source electrode of the eighth electronic switching tube is grounded.
In one embodiment, the high temperature compensation circuit further includes a diode, a cathode of the diode is connected to a drain of the seventh electronic switching tube, and an anode of the diode is grounded.
In one embodiment, the reference voltage output circuit comprises a ninth electronic switch tube and an eleventh resistor;
the source electrode of the ninth electronic switching tube is connected with the positive power supply end, the grid electrode of the ninth electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the ninth electronic switching tube and the first end of the eleventh resistor are connected in common to form the output end of the reference voltage output circuit, and the second end of the eleventh resistor is grounded.
In one embodiment, the starting circuit comprises a tenth electronic switch tube, an eleventh electronic switch tube, a twelfth electronic switch tube and a thirteenth electronic switch tube;
the source electrode of the tenth electronic switching tube is connected with the positive power supply end, the grid electrode of the tenth electronic switching tube is grounded, the drain electrode of the tenth electronic switching tube is connected with the source electrode of the eleventh electronic switching tube, the grid electrode of the eleventh electronic switching tube, the drain electrode of the twelfth electronic switching tube and the drain electrode of the thirteenth electronic switching tube are connected in common, the grid electrode of the thirteenth electronic switching tube is used for receiving a starting voltage, the source electrode of the thirteenth electronic switching tube and the source electrode of the twelfth electronic switching tube are grounded, and the drain electrode of the twelfth electronic switching tube forms a signal output end of the starting circuit.
In one embodiment, the width-to-length ratio of the first electronic switch tube, the width-to-length ratio of the second electronic switch tube, the width-to-length ratio of the third electronic switch tube, and the width-to-length ratio of the ninth electronic switch tube are equal.
In one embodiment, the width-to-length ratio of the fourth electronic switching tube, the width-to-length ratio of the fifth electronic switching tube and the width-to-length ratio of the sixth electronic switching tube are equal.
A second aspect of the embodiments of the present invention provides an electronic device, including the low-temperature-drift low-voltage low-offset bandgap reference voltage source as described above.
Compared with the prior art, the embodiment of the invention has the following beneficial effects: the band-gap reference voltage source with low temperature drift, low voltage and low offset generates currents with logarithmic characteristics by arranging a high-order temperature compensation circuit, high-order nonlinear items in a triode circuit are directly offset, high-order temperature compensation is achieved, meanwhile, the working currents with positive temperature characteristics are used for controlling the high-temperature compensation circuit to be started and shunt, the problem that the proportion of the nonlinear items in a high-temperature stage is reduced, the reference current is increased greatly, the reference voltage is increased, the problem that the reference voltage is increased is caused, meanwhile, a T-shaped resistance network is added, offset of the reference voltage is reduced, the output precision of the reference voltage is improved, a divider resistance network is added, the differential input voltage of an error amplifier is reduced, the reference voltage is ensured to work under a lower power supply voltage, and the voltage working range of the band-gap reference voltage source is expanded.
Drawings
FIG. 1 is a schematic circuit diagram of a conventional bandgap reference voltage source;
fig. 2 is a schematic circuit structure diagram of a low-temperature-drift low-voltage low-offset bandgap reference voltage source according to an embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
The first aspect of the embodiment of the invention provides a low-temperature drift low-voltage low-offset bandgap reference voltage source.
As shown in fig. 1, fig. 1 is a schematic circuit structure diagram of a low-temperature drift, low-voltage and low-offset bandgap reference voltage source according to an embodiment of the present invention, in this embodiment, the bandgap reference voltage source includes a start circuit 10, a reference core generation circuit 20, a high-order temperature compensation circuit 30, a high-temperature compensation circuit 40, and a reference voltage output circuit 50;
a start circuit 10 for generating a first driving level to a reference core generating circuit 20 when a power supply voltage is powered on;
the reference core generating circuit 20 comprises an error amplifier U1, a voltage-dividing resistance network respectively connected with the input end of the error amplifier U1 through voltage-dividing nodes, a T-type resistance network 21 and two triode circuits respectively connected with two ends of the voltage-dividing resistance network, wherein the reference core generating circuit 20 is triggered by a first driving level to generate two paths of working currents and output the two paths of working currents to the two triode circuits which are arranged in a differential mode, and outputs a second driving level to the reference voltage output circuit 50 so as to trigger the reference voltage output circuit 50 to output a reference current IREF and a reference voltage VREF;
the voltage dividing resistor network is used for reducing the differential input voltage of the error amplifier U1 and comprises a first voltage dividing resistor network 221 and a second voltage dividing resistor network 222 which are respectively connected with two triode circuits;
a T-type resistor network 21 for reducing an offset voltage of the reference voltage VREF;
the high-order temperature compensation circuit 30 is used for synchronously generating logarithmic current when the reference core generating circuit 20 generates working current and offsetting a high-order nonlinear term in the triode circuit, wherein the logarithmic current is in direct proportion to temperature;
and the high-temperature compensation circuit 40 is configured to trigger conduction when the logarithmic current of the high-order temperature compensation circuit 30 reaches a preset current, so as to perform high-temperature current compensation on the reference current IREF generated by the reference voltage output circuit 50.
In this embodiment, the differentially arranged triode circuits have the same structure as the conventional circuit, when the two triode circuits work at different current densities, the difference between the voltages of the base electrodes and the emitter electrodes of the two triode circuits is in direct proportion to the absolute temperature, and the delta VBE has a positive temperature coefficient, so that a band gap reference voltage with a zero temperature coefficient is generated by a certain proportion.
Meanwhile, in order to improve the output precision of the reference voltage VREF, the differential input of an error amplifier U1 is added to clamp the voltage between the base electrode and the emitter electrode of the triode circuit, and the mismatch of the circuit is reduced.
However, because the differential triode circuit only compensates the first-order temperature term of the reference voltage VREF, the high-order nonlinear term is not compensated, the temperature coefficient of the high-order nonlinear term is generally limited within 20 ppm-100 ppm/DEG C because of the interference of the high-order nonlinear term, in order to solve the problem, the band gap reference voltage source is provided with the high-order temperature compensation circuit 30, the high-order temperature compensation circuit 30 is based on the logarithmic compensation technical principle of the band gap reference voltage source, and another triode circuit is arranged, and the VBE high-order nonlinear term in the original triode circuit is directly offset by utilizing the voltage difference between the base electrode and the emitter electrode of the triode to generate logarithmic current, so as to realize the high-order temperature compensation of the reference voltage VREF.
In addition, at high temperature, the proportion of the non-linear term of VBE in the high temperature stage is greatly increased, which causes the proportion of the positive temperature coefficient current of the reference current IREF to be increased, resulting in a high reference voltage VREF.
In order to solve the problem, a voltage dividing resistor network is added, the voltage dividing resistor network is arranged on a path of working current to divide voltage, the differential input voltage of the error amplifier U1 is reduced, meanwhile, a T-shaped resistor network 21 is added, the mismatch voltage of the reference voltage VREF is reduced, therefore, the low-temperature-drift, low-voltage and low-mismatch band-gap reference voltage source is realized, and the output accuracy of the reference voltage VREF is improved.
Each circuit structure may be correspondingly configured according to functional requirements, as shown in fig. 2, optionally, the reference core generation circuit 20 includes a first electronic switch tube M1, a second electronic switch tube M2, a first triode circuit, a second triode circuit, a voltage-dividing resistance network and a T-type resistance network 21, the first triode circuit includes a first triode Q1, the second triode circuit includes a first resistor R1 and a second triode Q2, the voltage-dividing resistance network includes a second resistor R2, a third resistor R3, a fourth resistor R4 and a fifth resistor R5, and the T-type resistance network 21 includes a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8;
the source of the first electronic switch tube M1 and the source of the second electronic switch tube M2 are connected in common and connected to the positive power supply terminal VDD, the gate of the first electronic switch tube M1, the gate of the second electronic switch tube M2, the output terminal of the error amplifier U1, the signal output terminal of the start-up circuit 10, the controlled terminal of the high-order temperature compensation circuit 30 and the controlled terminal of the reference voltage output circuit 50 are connected in common, the drain of the first electronic switch tube M1, the first terminal of the sixth resistor R6, the first terminal of the second resistor R2 and the emitter of the first transistor Q1 are connected in common, the drain of the second electronic switch tube M2, the first terminal of the seventh resistor R7, the first terminal of the fourth resistor R4 and the first terminal of the first resistor R1 are connected in common, the second terminal of the second resistor R2, the first terminal of the third resistor R3 and the inverting input terminal of the error amplifier U1 are connected in common, the second terminal of the fourth resistor R4, the second terminal of the fifth resistor R5 and the inverting input terminal of the error amplifier U1, the second end of the sixth resistor R6, the second end of the seventh resistor R7 and the first end of the eighth resistor R8 are connected in common, and the second end of the third resistor R3, the collector of the first triode Q1, the base of the first triode Q1, the second end of the eighth resistor R8, the second end of the fifth resistor R5, the collector of the second triode Q2 and the base of the second triode Q2 are connected in common and grounded.
The high-order temperature compensation circuit 30 comprises a third electronic switch tube M3, a fourth electronic switch tube M4, a fifth electronic switch tube M5, a third triode Q3 and a ninth resistor R9;
the source of the third electronic switching tube M3, the source of the fourth electronic switching tube M4 and the source of the fifth electronic switching tube M5 are connected in common and are connected to the positive power supply terminal VDD, the gate of the third electronic switching tube M3 is connected to the output terminal of the error amplifier U1, the drain of the third electronic switching tube M3, the emitter of the third triode Q3, the drain of the fifth electronic switching tube M5 and the drain of the second electronic switching tube M2 are connected in common, the gate of the fourth electronic switching tube M4, the base of the third triode Q3, the first terminal of the ninth resistor R9 and the gate of the fifth electronic switching tube M5 are connected in common, and the collector of the third triode Q3 and the second terminal of the ninth resistor R9 are connected to ground.
The high-temperature compensation circuit 40 comprises a sixth electronic switch tube M6, a seventh electronic switch tube M7, an eighth electronic switch tube M8 and a tenth resistor R10;
the source of the sixth electronic switching tube M6 is connected to the positive power supply VDD, the gate of the sixth electronic switching tube M6 is connected to the gate of the fifth electronic switching tube M5, the drain of the sixth electronic switching tube M6, the first end of the tenth resistor R10, the gate of the seventh electronic switching tube M7 and the gate of the eighth electronic switching tube M8 are connected in common, the drain of the seventh electronic switching tube M7 is connected to the drain of the second electronic switching tube M2, the source of the seventh electronic switching tube M7 is connected to the drain of the eighth electronic switching tube M8, and the source of the eighth electronic switching tube M8 is grounded.
The high temperature compensation circuit 40 further includes a diode D1, a cathode of the diode D1 is connected to a drain of the seventh electronic switch M7, and an anode of the diode D1 is grounded.
The reference voltage output circuit 50 comprises a ninth electronic switch tube M9 and an eleventh resistor R11;
the source of the ninth electronic switching tube M9 is connected to the positive power supply terminal VDD, the gate of the ninth electronic switching tube M9 is connected to the output terminal of the error amplifier U1, the drain of the ninth electronic switching tube M9 and the first terminal of the eleventh resistor R11 are commonly connected to form the output terminal of the reference voltage output circuit 50, and the second terminal of the eleventh resistor R11 is grounded.
The starting circuit 10 comprises a tenth electronic switch tube M10, an eleventh electronic switch tube M11, a twelfth electronic switch tube M12 and a thirteenth electronic switch tube M13;
the source of the tenth electronic switch tube M10 is connected to the positive power supply VDD, the gate of the tenth electronic switch tube M10 is grounded, the drain of the tenth electronic switch tube M10 is connected to the source of the eleventh electronic switch tube M11, the gate of the eleventh electronic switch tube M11, the drain of the eleventh electronic switch tube M11, the gate of the twelfth electronic switch tube M12 and the drain of the thirteenth electronic switch tube M13 are connected in common, the gate of the thirteenth electronic switch tube M13 is used for receiving the start voltage, the source of the thirteenth electronic switch tube M13 and the source of the twelfth electronic switch tube M12 are both grounded, and the drain of the twelfth electronic switch tube M12 constitutes the signal output terminal of the start circuit 10.
In this embodiment, the tenth electronic switch tube M10 to the thirteenth electronic switch tube M13 form the starting circuit 10, when the power supply starts to power up, the starting voltage is at a low level, the gate voltages of the first electronic switch tube M1 and the second electronic switch tube M2 are at a high level, the thirteenth electronic switch tube M13 is turned off, the twelfth electronic switch tube M12 is turned on, the gate voltages of the first electronic switch tube M1 and the second electronic switch tube M2 are pulled down, the reference voltage VREF starts to establish a steady state, the starting voltage is pulled up, the thirteenth electronic switch tube M13 is turned on, the twelfth electronic switch tube M12 is turned off, the starting of the reference VREF voltage is completed, and the ninth electronic switch tube M9 is controlled to be turned on and outputs the normal reference voltage VREF.
The T-type resistor network 21 is composed of a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8, and as can be known from the davinin theorem and the equation of node voltage and current, the equivalent impedances of the seventh resistor R7 and the eighth resistor R8 are:
R0＝R7+2*R8 (1)
wherein, R7 is the impedance of the seventh resistor, and R8 is the impedance of the eighth resistor.
In one embodiment, the width-to-length ratio of the first electronic switching tube M1, the width-to-length ratio of the second electronic switching tube M2, the width-to-length ratio of the third electronic switching tube M3, and the width-to-length ratio of the ninth electronic switching tube M9 are equal, the impedance of the second resistor R2 and the fourth resistor R4 are equal, and the impedance of the third resistor R3 and the fifth resistor R5 are equal, so that I0 ═ I1 ═ IREF, n1 is the ratio of the second transistor Q2 and the first transistor Q1, and therefore, the reference voltage VREF of the bandgap reference voltage source is (without the high-order temperature compensation module):
VREF＝IREF*R11 (2)
IREF is a reference current flowing through the eleventh resistor R11.
From equations (1) and (2) we can obtain:
wherein, VEB_Q1Is the voltage difference between the emitter and the base of the first transistor Q1, VTlnn1 is a high-order nonlinear term of the triode circuit, R1 is a first resistor, R2 is a second resistor, R3 is a third resistor, R7 is a seventh resistor, R8 is an eighth resistor, and R11 is an eleventh resistor.
The mismatch voltage VOS of the reference voltage VREF is mainly caused by local mismatch of threshold voltages in transistors, and is obtained by taking equation (3) above the mismatch voltage VOS:
compared with a traditional band-gap reference voltage source, the scale factor R11/R1 in the formula (4) is smaller than the scale factor (1+ R2/R1) in the traditional band-gap reference voltage source, the mismatch of the reference voltage VREF is reduced by adjusting the size of the scale factor R11/R1, and the output precision of the reference voltage VREF is improved.
Meanwhile, as shown in fig. 1, the conventional structure needs to use a larger power supply voltage to ensure the normal operation of the whole circuit, but the larger power supply voltage causes larger power consumption and is difficult to meet the current operation requirement under low voltage. As shown in fig. 2, in this embodiment, by adding a voltage-dividing resistor network formed by the second resistor R2, the third resistor R3, the fourth resistor R4, and the fifth resistor R5, the differential input voltage of the error amplifier U1 is reduced, and compared with the conventional bandgap reference structure, the differential input voltage is lower, so that the bandgap reference voltage source can be ensured to operate at a lower power supply voltage, and the operating voltage range of the bandgap reference voltage source is expanded.
Meanwhile, based on the principle of logarithmic compensation technology, a high-order temperature compensation circuit 30 is provided, and the compensation principle is as follows: the current with logarithmic characteristic is generated on the ninth resistor R9 by the action of the voltage difference of the base electrode and the emitter electrode of the third triode Q3, and the high-order nonlinear term TlnT in the voltage difference of the base electrode and the emitter electrode of the second triode Q2 is directly counteracted.
The specific derivation process is as follows:
from equations (5) and (6):
wherein, INLThe logarithmic current flowing through the ninth resistor R9, I0 ═ IREF, IPTAT, the current flowing through the first resistor R1, and having a positive temperature coefficient with temperature. k. q, n1, etc. are constants independent of temperature.
The current I can be found from equation (7)NLThe high-order nonlinear term TlnT in the reference voltage VREF can be directly compensated in a logarithmic relationship with temperature. Adding formula (3) to INLAfter the current is obtained, the compensated reference voltage VREF is obtained as follows:
order to
The formula can be abbreviated as:
wherein:
where, when VGO is at absolute zero, the extrapolated bandgap voltage of silicon is about 1.176V, Tr is the reference temperature, vbe (Tr) is the base-emitter voltage at the reference temperature, η is a process-dependent temperature-independent variable, δ is the temperature factor of the collector, q is the electronic charge, and k is the boltzmann coefficient.
According to the formulas (9) and (10), except that each resistor is a variable, the other parameters are determined values, namely, the proportional relation of each resistor is adjusted to enable L1 and L2 to be zero, so that high-order compensation in the low-temperature stage is completed.
Meanwhile, under high temperature, the reference voltage VREF becomes large, and when the high-order compensation at the low temperature stage cannot completely compensate to the high temperature stage, the reference voltage VREF undergoes temperature drift deviation, in order to solve the problem, a high temperature compensation circuit 40 is provided, wherein the ratio of the width and the length of the fourth electronic switch tube M4, the ratio of the width and the length of the fifth electronic switch tube M5, and the ratio of the width and the length of the sixth electronic switch tube M6 are equal.
As can be seen from the above, INLThe node voltage VC of the tenth resistor R10 is high along with the temperature rise when the temperature rises, the seventh electronic switch tube M7 and the eighth electronic switch tube M8 are conducted when the threshold voltage of the seventh electronic switch tube M7 and the eighth electronic switch tube M8 rises, the reference current part current passes through the seventh electronic switch tube M7 and the eighth electronic switch tube M8 to the ground, the reference voltage VREF is reduced, and high-temperature compensation is realized.
Meanwhile, considering that the threshold voltages of the seventh electronic switching tube M7 and the eighth electronic switching tube M8 are affected by process and temperature changes, when the current high-temperature compensation circuit 40 is adopted and the good compensation characteristics under the whole PVT are difficult to be considered, the high-temperature compensation circuit 40 is further provided with a diode D1, the reverse leakage current of the reversely arranged diode D1 is increased at a high-temperature stage, the reference voltage VREF is reduced, and the function of high-temperature compensation is further realized.
In one embodiment, the first electronic switch tube M1, the second electronic switch tube M2, the third electronic switch tube M3, the fourth electronic switch tube M4, the fifth electronic switch tube M5, the sixth electronic switch tube M6, the ninth electronic switch tube M9, the tenth electronic switch tube M10 and the eleventh electronic switch tube M11 are PMOS tubes according to the conduction mode of each electronic switch tube.
The seventh electronic switching tube M7, the eighth electronic switching tube M8, the twelfth electronic switching tube M12 and the thirteenth electronic switching tube M13 are all NMOS tubes.
The invention further provides an electronic device, which includes a low-temperature-drift low-voltage-drop-offset bandgap reference voltage source, and the specific structure of the low-temperature-drift low-voltage-drop-offset bandgap reference voltage source refers to the above embodiments.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present invention, and are intended to be included within the scope of the present invention.
Claims (10)
1. A band-gap reference voltage source with low temperature drift, low voltage and low offset is characterized by comprising a starting circuit, a reference core generating circuit, a high-order temperature compensating circuit, a high-temperature compensating circuit and a reference voltage output circuit;
the starting circuit generates a first driving level to the reference core generating circuit when the power supply voltage is electrified;
the reference core generating circuit comprises an error amplifier, a voltage-dividing resistance network, a T-shaped resistance network and two triode circuits, wherein the voltage-dividing resistance network is respectively connected with the input end of the error amplifier through a voltage-dividing node, the T-shaped resistance network is respectively connected with two ends of the voltage-dividing resistance network, the reference core generating circuit is triggered by the first driving level to work to generate two paths of working currents and output the working currents to the two triode circuits which are arranged in a differential mode, and a second driving level is output to the reference voltage output circuit to trigger the reference voltage output circuit to output reference currents and reference voltages;
the voltage dividing resistor network is used for reducing the differential input voltage of the error amplifier;
the T-shaped resistance network is used for reducing offset voltage of the reference voltage;
the high-order temperature compensation circuit is used for synchronously generating logarithmic current when the reference core generating circuit generates working current and offsetting a high-order nonlinear term in the triode circuit, and the logarithmic current is in direct proportion to temperature;
the high-temperature compensation circuit is used for triggering and conducting when the logarithmic current of the high-order temperature compensation circuit reaches a preset current so as to perform high-temperature current compensation on the reference current generated by the reference voltage output circuit.
2. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 1, wherein the reference core generating circuit comprises a first electronic switch, a second electronic switch, a first triode circuit, a second triode circuit, a divider resistor network and a T-type resistor network, the first triode circuit comprises a first triode, the second triode circuit comprises a first resistor and a second triode, the divider resistor network comprises a second resistor, a third resistor, a fourth resistor and a fifth resistor, and the T-type resistor network comprises a sixth resistor, a seventh resistor and an eighth resistor;
a source electrode of the first electronic switching tube and a source electrode of the second electronic switching tube are connected in common and are connected with a positive power supply end, a gate electrode of the first electronic switching tube, a gate electrode of the second electronic switching tube, an output end of the error amplifier, a signal output end of the starting circuit, a controlled end of the high-order temperature compensation circuit and a controlled end of the reference voltage output circuit are connected in common, a drain electrode of the first electronic switching tube, a first end of the sixth resistor, a first end of the second resistor and an emitter electrode of the first triode are connected in common, a drain electrode of the second electronic switching tube, a first end of the seventh resistor, a first end of the fourth resistor and a first end of the first resistor are connected in common, a second end of the second resistor, a first end of the third resistor and an inverting input end of the error amplifier are connected in common, a second end of the fourth resistor, a third end of the second resistor and a controlled end of the reference voltage output circuit are connected in common, The first end of the fifth resistor and the positive phase input end of the error amplifier are connected in common, the second end of the sixth resistor, the second end of the seventh resistor and the first end of the eighth resistor are connected in common, and the second end of the third resistor, the collector of the first triode, the base of the first triode, the second end of the eighth resistor, the second end of the fifth resistor, the collector of the second triode and the base of the second triode are connected in common and grounded.
3. The low-temperature drift low-voltage low-offset bandgap reference voltage source according to claim 2, wherein the high-order temperature compensation circuit comprises a third electronic switching tube, a fourth electronic switching tube, a fifth electronic switching tube, a third triode and a ninth resistor;
the source electrode of the third electronic switching tube, the source electrode of the fourth electronic switching tube and the source electrode of the fifth electronic switching tube are connected in common and are connected with a positive power supply end, the grid electrode of the third electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the third electronic switching tube, the emitter electrode of the third triode, the drain electrode of the fifth electronic switching tube and the drain electrode of the second electronic switching tube are connected in common, the grid electrode of the fourth electronic switching tube, the base electrode of the third triode, the first end of the ninth resistor and the grid electrode of the fifth electronic switching tube are connected in common, and the collector electrode of the third triode and the second end of the ninth resistor are both grounded.
4. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 3, wherein the high-temperature compensation circuit comprises a sixth electronic switching tube, a seventh electronic switching tube, an eighth electronic switching tube and a tenth resistor;
the source electrode of the sixth electronic switching tube is connected with the positive power supply end, the grid electrode of the sixth electronic switching tube is connected with the grid electrode of the fifth electronic switching tube, the drain electrode of the sixth electronic switching tube, the first end of the tenth resistor, the grid electrode of the seventh electronic switching tube and the grid electrode of the eighth electronic switching tube are connected in common, the drain electrode of the seventh electronic switching tube is connected with the drain electrode of the second electronic switching tube, the source electrode of the seventh electronic switching tube is connected with the drain electrode of the eighth electronic switching tube, and the source electrode of the eighth electronic switching tube is grounded.
5. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 4, wherein the high-temperature compensation circuit further comprises a diode, a cathode of the diode is connected to a drain of the seventh electronic switching tube, and an anode of the diode is grounded.
6. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 2, wherein the reference voltage output circuit comprises a ninth electronic switching tube and an eleventh resistor;
the source electrode of the ninth electronic switching tube is connected with the positive power supply end, the grid electrode of the ninth electronic switching tube is connected with the output end of the error amplifier, the drain electrode of the ninth electronic switching tube and the first end of the eleventh resistor are connected in common to form the output end of the reference voltage output circuit, and the second end of the eleventh resistor is grounded.
7. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 1, wherein the start-up circuit comprises a tenth electronic switch tube, an eleventh electronic switch tube, a twelfth electronic switch tube and a thirteenth electronic switch tube;
the source electrode of the tenth electronic switching tube is connected with the positive power supply end, the grid electrode of the tenth electronic switching tube is grounded, the drain electrode of the tenth electronic switching tube is connected with the source electrode of the eleventh electronic switching tube, the grid electrode of the eleventh electronic switching tube, the drain electrode of the twelfth electronic switching tube and the drain electrode of the thirteenth electronic switching tube are connected in common, the grid electrode of the thirteenth electronic switching tube is used for receiving a starting voltage, the source electrode of the thirteenth electronic switching tube and the source electrode of the twelfth electronic switching tube are grounded, and the drain electrode of the twelfth electronic switching tube forms a signal output end of the starting circuit.
8. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 6, wherein the ratio of the width to the length of the first electronic switching transistor, the ratio of the width to the length of the second electronic switching transistor, the ratio of the width to the length of the third electronic switching transistor and the ratio of the width to the length of the ninth electronic switching transistor are equal.
9. The low-temperature-drift low-voltage low-offset bandgap reference voltage source according to claim 4, wherein the ratio of the width to the length of the fourth electronic switching transistor, the ratio of the width to the length of the fifth electronic switching transistor and the ratio of the width to the length of the sixth electronic switching transistor are equal.
10. An electronic device comprising the low-temperature-drift low-voltage low-offset bandgap reference voltage source according to any one of claims 1 to 9.
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