CN102354251A - Band-gap reference voltage circuit - Google Patents
Band-gap reference voltage circuit Download PDFInfo
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- CN102354251A CN102354251A CN2011102631512A CN201110263151A CN102354251A CN 102354251 A CN102354251 A CN 102354251A CN 2011102631512 A CN2011102631512 A CN 2011102631512A CN 201110263151 A CN201110263151 A CN 201110263151A CN 102354251 A CN102354251 A CN 102354251A
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Abstract
The invention relates to a band-gap reference voltage circuit comprising a first bipolar transistor, a second bipolar transistor, a first resistor, a second resistor, a third resistor and a fourth resistor. The base electrode and the collector electrode of the first bipolar transistor are grounded, and the emitter electrode of the first bipolar transistor is grounded through the first resistor. The base electrode and the collector electrode of the second bipolar transistor are grounded, the emitter electrode of the second bipolar transistor is connected to one end of the third resistor, and the other end of the third resistor is grounded through the second resistor; one end of the fourth resistor is grounded, and a current in direct proportion to a mixed current of a current flowing through the third resistor and a current flowing through the second resistor flows through the fourth resistor, so that the other end of the fourth resistor obtains a reference voltage. The fourth resistor comprises a plurality of adjustable resistor units with each connected in parallel with a corresponding switch, and the resistance value of the fourth resistor is adjusted through controlling the switching on/off of each switch, furthermore, the reference voltage can be adjusted to obtain a reference voltage with higher precision.
Description
[technical field]
The present invention relates to circuit design field, particularly relate to a kind of band-gap reference (Bandgap Reference) potential circuit.
[background technology]
The bandgap voltage reference circuit can provide stable reference voltage in the temperature variation environment, so it is widely used in the circuit such as power regulator, A/D and D/A converter.Traditional band-gap reference circuit utilizes the voltage V of positive temperature coefficient (PTC)
TVoltage V for negative temperature coefficient
BECompensate, thereby can produce not temperature variant VD, this voltage is generally 1.2 volts, wherein voltage V
BEThe base-emitter voltage that is generally bipolar transistor (Bipolar Transistor) is poor.
About 1.2V, its supply voltage generally need be greater than 1.2V usually for the output voltage of above-mentioned band-gap reference circuit, and this has just limited the application under low pressure of said band-gap reference circuit.Yet, because IC design is a main flow with low-power and low-voltage target at present, many IC circuit need about 1.2 volts or below operate, in the application of these low pressure, need the band-gap reference circuit of low pressure that reference voltage is provided.
In addition, mutually after the compensation, the reference voltage of generation still can be along with temperature fluctuates in small range the voltage that utilizes Positive and Negative Coefficient Temperature, and this remains unacceptable for some concerning the very high application of the accuracy requirement of reference voltage.
Therefore, hope to propose a kind of high-precision minimum bandgap voltage reference circuit that varies with temperature.
[summary of the invention]
Therefore, one object of the present invention is to provide a kind of bandgap voltage reference circuit, and it can provide the more high-precision minimum reference voltage that varies with temperature.
According to a first aspect of the invention, the present invention provides a kind of bandgap voltage reference circuit, and it comprises first bipolar transistor, second bipolar transistor, first resistance, second resistance, the 3rd resistance and the 4th resistance.The base stage of first bipolar transistor and grounded collector, its emitter-base bandgap grading is connected with ground via first resistance; The base stage of second bipolar transistor and grounded collector, its emitter-base bandgap grading are connected in an end of the 3rd resistance, and the other end of the 3rd resistance is connected with ground via second resistance; One end of the 4th resistance is connected with ground, utilizes the electric current that is directly proportional with the hybrid current of the electric current of the electric current of the 3rd resistance of flowing through and second resistance the 4th resistance of flowing through, thereby obtains reference voltage at the other end of the 4th resistance.Wherein the 4th resistance comprises basic resistance unit and a plurality of adjustable resistance unit, and each adjustable resistance unit is parallelly connected with a corresponding switch, the conducting through controlling each switch and end the resistance of adjusting the 4th resistance.
Further, first bipolar transistor is a benchmark bipolar transistor, and second bipolar transistor comprises the benchmark bipolar transistor of a plurality of parallel connections.
Further, said bandgap voltage reference circuit also includes a PMOS transistor, the 2nd PMOS transistor, the 3rd PMOS transistor and operational amplifier,
The transistorized source electrode of each PMOS connects power supply, and grid connects mutually,
The one PMOS transistor drain connects the anode of first bipolar transistor,
The 2nd PMOS transistor drain connects an end that is connected with second resistance of the 3rd resistance,
The 3rd PMOS transistor drain links to each other with the 4th resistance, and the voltage of the intermediate node of the 3rd PMOS transistor drain and the 4th resistance is said reference voltage,
The negative-phase input of said operational amplifier connects the drain electrode of a PMOS transistor PM1, and normal phase input end connects the 2nd PMOS transistor drain, the transistorized grid of its output termination the 3rd PMOS.
Further again, a PMOS transistor, the 2nd PMOS transistor and the 3rd PMOS transistor constitute current mirror, and the electric current that flows through on the electric current that flows through on the 3rd PMOS transistor and the 2nd PMOS transistor is directly proportional.
Further: said bandgap voltage reference circuit also comprises: the digital temperature sensor of induction Current Temperatures; Obtain temperature corrected data according to Current Temperatures, and according to the temperature compensation module with said each switch of temperature corrected data control.
Compared with prior art, the bandgap voltage reference circuit among the present invention can be programmed, and can calibrate its output voltage according to temperature like this, thereby realize temperature compensation.
[description of drawings]
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use is done to introduce simply in will describing embodiment below.Wherein:
Fig. 1 is the bandgap voltage reference circuit structured flowchart in one embodiment among the present invention;
Fig. 2 is the circuit diagram of the bandgap voltage reference unit of the bandgap voltage reference circuit among Fig. 1;
Fig. 3 is the structural representation of the programmable resistance of the bandgap voltage reference unit among Fig. 2; With
The principle schematic of Fig. 4 for reference voltage is carried out temperature compensation.
[embodiment]
The present invention is further illustrated below in conjunction with accompanying drawing and embodiment.
Fig. 1 is bandgap voltage reference circuit 100 circuit diagram in one embodiment among the present invention.Please referring to shown in Figure 1, said bandgap voltage reference circuit 100 comprises digital temperature sensor 110, temperature compensation module 120 and bandgap voltage reference unit 130.
The Current Temperatures of the said bandgap voltage reference of said digital temperature sensor 110 inductions unit 130, and Current Temperatures offered said temperature compensation module 120.Said temperature compensation module 120 obtains temperature corrected data according to Current Temperatures, and said temperature corrected data is offered said bandgap voltage reference unit 130.Said bandgap voltage reference unit 130 carries out temperature correction according to said temperature corrected data to the reference voltage of exporting.
Fig. 2 is the circuit diagram of the bandgap voltage reference unit 130 of the bandgap voltage reference circuit 100 among Fig. 1.See also shown in Figure 2ly, said bandgap voltage reference unit 130 comprises bipolar transistor Q1 (PNP), bipolar transistor Q2 (PNP), resistance R 1, R2 and R3.
The base stage of bipolar transistor Q1 and grounded collector, emitter-base bandgap grading is connected with ground via resistance R 1, the base stage of bipolar transistor Q2 and grounded collector, emitter-base bandgap grading is connected in an end of resistance R 3, and the other end of resistance R 3 is connected with ground via resistance R 2.If bipolar transistor Q1 is considered as a benchmark bipolar transistor; Bipolar transistor Q2 comprises that then the benchmark bipolar transistor of a plurality of parallel connections (is that base stage links to each other so; Emitter-base bandgap grading links to each other; Collector links to each other); Like this can be so that bipolar transistor Q1 and Q2 obtain better matching, said in one example bipolar transistor Q2 comprises the benchmark bipolar transistor of 8 parallel connections.
When said bandgap voltage reference circuit 100 was in steady state (SS), the voltage of the emitter-base bandgap grading of said transistor Q1 equated with the voltage of an end that is connected with resistance R 2 of said resistance R 3, can obtain following formula: V like this
BE1=V
BE2+ I
PTAT* R3, wherein V
BE1Be the conduction voltage drop of transistor Q1, V
BE2Be the conduction voltage drop of transistor Q2, I
PTATBe the electric current that flows through on the resistance R 3.
Following formula is carried out fortran to be got; I
PTAT=(V
BE1-V
BE2)/R3=Δ V
BE/ R3, Δ V
BEBe the voltage of positive temperature coefficient (PTC), so I
PTATElectric current for positive temperature coefficient (PTC).
In addition, flow through the electric current I of resistance R 2
CTATFor: I
CTAT=V
BE1/ R2, V
BE1Be the voltage of negative temperature coefficient, so I
CTATElectric current for negative temperature coefficient.Size through adjustment resistance R 2 and R3 can be so that I
CTATAnd I
PTATHybrid current be the approximate zero temperature coefficient, promptly do not change the size of electric current along with the change of temperature, perhaps change very little.
Said bandgap voltage reference circuit 100 also includes programmable resistance R4, utilizes the electric current of approximate zero temperature coefficient to flow through the band gap voltage V that said programmable resistance R4 can obtain the approximate zero temperature coefficient
BGSaid resistance R 1, R2, R3 and R4 are the resistance that matches each other, and can reduce the influence of the temperature coefficient of resistance like this, also can reduce each resistance because the relative error that technology causes.
Said bandgap voltage reference circuit 100 also includes PMOS (P-type Complementary Metal Oxide Semiconductor) transistor PM1, PM2 and PM3, and operational amplifier OP.The source electrode of each PMOS transistor PM1, PM2 and PM3 meets power supply V
DD, grid connects mutually.The drain electrode of PMOS transistor PM1 connects the emitter-base bandgap grading of said transistor Q1; The drain electrode of said PMOS transistor PM2 connects an end that is connected with resistance R 2 of said resistance R 3; The drain electrode of said PMOS transistor PM3 links to each other with ground via said resistance R 4, and the voltage of the drain electrode of said PMOS transistor PM3 and the intermediate node of said resistance R 4 is said band gap voltage V
BG(also can claim output voltage, reference voltage, bandgap voltage reference).The negative-phase input of said operational amplifier OP connects the drain electrode of PMOS transistor PM1, and normal phase input end connects the drain electrode of PMOS transistor MP2, the grid of its output termination PMOS transistor MP3.Said operational amplifier makes the voltage of its two input ends equate through the grid voltage of control PMOS transistor MP 1 and MP2; Promptly make the voltage of voltage and an end that is connected with resistance R 2 of said resistance R 3 of emitter-base bandgap grading of said transistor Q1 equate that the electric current that flows through on the said like this PMOS transistor MP2 is exactly the I of approximate zero temperature coefficient
CTATAnd I
PTATHybrid current.
PMOS transistor PM1, PM2 and PM3 constitute current mirror; The electric current that flows through on the electric current that flows through on the PMOS transistor MP3 and the PMOS transistor MP2 is directly proportional; The electric current that flows through on the PMOS transistor MP3 also is the electric current of approximate zero temperature coefficient, the electric current I of approximate zero temperature coefficient like this
CONSTFlow through the band gap voltage V that said resistance R 4 can obtain the approximate zero temperature coefficient
BGIn one embodiment, the ratio of the breadth length ratio of PMOS transistor PM1, PM2 and PM3 is 1: 1: 1, flows through the transistorized electric current of each PMOS like this and equates.
Owing to adopted the electric current of approximate zero temperature coefficient on resistance, to form the mode of voltage, make band gap voltage V
BGCan be less than 1V.
Said bandgap voltage reference unit 130 is adjusted said programmable resistance R4 according to said temperature corrected data, and then the reference voltage of its output is carried out temperature correction, makes the reference voltage of output very little with variation of temperature.
Fig. 3 is the structural representation of the programmable resistance R4 of the bandgap voltage reference unit among Fig. 2.As shown in Figure 3, said programmable resistance R4 comprise basic resistance unit R400 and n adjustable resistance unit R40, R41, R42 ..., R4n.Each adjustable resistance unit and corresponding switch S0, S1, S2 ..., Sn parallel connection, the control end of each switch by said temperature corrected data D0, D1, D2 ..., Dn control.Conducting through controlling each switch and by just can adjusting the resistance of programmable resistance R4, thus reference voltage V changed
BG
The principle schematic of Fig. 4 for reference voltage is carried out temperature compensation, reference voltage temperature curve after standard of compensation voltage temperature curve, temperature compensation curve and the compensation not shown in it.Can find out that compensation back reference voltage temperature curve is very little with variation of temperature, goes for very strict application.
In addition, because follow-up compensation schemes is arranged, making can be more easy when bandgap engineered reference voltage circuit.In other words, do not reach the circuit of application standard, can adopt compensation schemes to make it reach standard yet, alleviated pressure like this technology and design for its output reference voltage.
To carry out temperature compensation to the bandgap voltage reference circuit, need record the not standard of compensation voltage temperature curve of this bandgap voltage reference circuit in advance, can obtain corresponding temperature compensation curve according to this curve.When concrete the realization, can obtain an average not standard of compensation voltage temperature curve according to the not standard of compensation voltage temperature curve of a plurality of bandgap voltage reference circuit, obtain corresponding temperature compensation curve thus.On this temperature compensation curve, get some sampled points; Such as compensation point of per 5 degree samplings; Scope at-30 degree to 130 degree can obtain more than 30 compensation point, and each compensation point all to temperature corrected data should be arranged, is stored in these temperature corrected data in the temperature compensation module 120.
Said temperature compensation module 120 finds its corresponding temperature corrected data just passable when obtaining Current Temperatures.Because in the previous embodiment, compensation point disperses, so Current Temperatures possibly not have just in time corresponding temperature corrected data, thereby can carry out the temperature corrected data that interpolation obtains Current Temperatures to two adjacent temperature corrected data of Current Temperatures correspondence this moment.
In one embodiment, be 0.1% to the adjustment step-length of programmable resistance, if the value of the binary number that temperature corrected data D1～Dn constitutes is 20, will carry out 2% adjustment to programmable resistance so, that is to say reference voltage has been carried out 2% adjustment.
The implication of " connection " among this paper, " joining " or speech such as " connecing " comprises direct connection, connects or other conspicuous connected modes indirectly." a plurality of " among this paper or the implication of " some " are two or more.
Above-mentioned explanation has fully disclosed the specific embodiment of the present invention.It is pointed out that and be familiar with the scope that any change that person skilled in art's specific embodiments of the invention done does not all break away from claims of the present invention.Correspondingly, the scope of claim of the present invention also is not limited only to previous embodiment.
Claims (5)
1. a bandgap voltage reference circuit is characterized in that, it comprises first bipolar transistor, second bipolar transistor, first resistance, second resistance, the 3rd resistance and the 4th resistance,
The base stage of first bipolar transistor and grounded collector, its emitter-base bandgap grading is connected with ground via first resistance; The base stage of second bipolar transistor and grounded collector, its emitter-base bandgap grading are connected in an end of the 3rd resistance, and the other end of the 3rd resistance is connected with ground via second resistance; One end of the 4th resistance is connected with ground, and utilize the electric current that is directly proportional with the hybrid current of the electric current of the electric current of the 3rd resistance of flowing through and second resistance the 4th resistance of flowing through, thereby obtain reference voltage at the other end of the 4th resistance,
Wherein the 4th resistance comprises basic resistance unit and a plurality of adjustable resistance unit, and each adjustable resistance unit is parallelly connected with a corresponding switch, the conducting through controlling each switch and end the resistance of adjusting the 4th resistance.
2. circuit according to claim 1 is characterized in that: first bipolar transistor is a benchmark bipolar transistor, and second bipolar transistor comprises the benchmark bipolar transistor of a plurality of parallel connections.
3. circuit according to claim 2 is characterized in that: it also includes a PMOS transistor, the 2nd PMOS transistor, the 3rd PMOS transistor and operational amplifier,
The transistorized source electrode of each PMOS connects power supply, and grid connects mutually,
The one PMOS transistor drain connects the emitter-base bandgap grading of first bipolar transistor,
The 2nd PMOS transistor drain connects an end that is connected with second resistance of the 3rd resistance,
The 3rd PMOS transistor drain links to each other with the 4th resistance, and the voltage of the intermediate node of the 3rd PMOS transistor drain and the 4th resistance is said reference voltage,
The negative-phase input of said operational amplifier connects a PMOS transistor drain, and normal phase input end connects the 2nd PMOS transistor drain, the transistorized grid of its output termination the 3rd PMOS.
4. circuit according to claim 3 is characterized in that: a PMOS transistor, the 2nd PMOS transistor and the 3rd PMOS transistor constitute current mirror, and the electric current that flows through on the electric current that flows through on the 3rd PMOS transistor and the 2nd PMOS transistor is directly proportional.
5. according to the arbitrary described circuit of claim 1-4, it is characterized in that: also comprise:
The digital temperature sensor of induction Current Temperatures; With
Obtain temperature corrected data according to Current Temperatures, and according to the temperature compensation module with said each switch of temperature corrected data control.
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| CN2011102631512A CN102354251A (en) | 2011-08-24 | 2011-08-24 | Band-gap reference voltage circuit |
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| CN2011102631512A CN102354251A (en) | 2011-08-24 | 2011-08-24 | Band-gap reference voltage circuit |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103853228A (en) * | 2012-12-07 | 2014-06-11 | 上海华虹集成电路有限责任公司 | Reference voltage generating circuit |
| CN104601127A (en) * | 2013-10-31 | 2015-05-06 | 上海华虹集成电路有限责任公司 | Operational amplifier circuit and reference voltage generating circuit module |
| CN104750162A (en) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Reference voltage generating circuit and reference voltage calibrating method |
| CN107544600A (en) * | 2017-09-05 | 2018-01-05 | 北京时代民芯科技有限公司 | A kind of adjustable band-gap reference circuit of numeral |
| CN108052151A (en) * | 2017-12-14 | 2018-05-18 | 上海艾为电子技术股份有限公司 | A kind of bandgap voltage reference without clamped amplifier |
| CN109150164A (en) * | 2018-08-13 | 2019-01-04 | 广州瀚辰信息科技有限公司 | Generate the chip of constant reference current |
| CN112578840A (en) * | 2020-12-09 | 2021-03-30 | 杭州米芯微电子有限公司 | Method, system and storage medium for calibrating reference voltage by using temperature |
| CN112965565A (en) * | 2021-02-08 | 2021-06-15 | 苏州领慧立芯科技有限公司 | Band gap reference circuit with low temperature drift |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103853228A (en) * | 2012-12-07 | 2014-06-11 | 上海华虹集成电路有限责任公司 | Reference voltage generating circuit |
| CN104601127A (en) * | 2013-10-31 | 2015-05-06 | 上海华虹集成电路有限责任公司 | Operational amplifier circuit and reference voltage generating circuit module |
| CN104750162A (en) * | 2013-12-31 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Reference voltage generating circuit and reference voltage calibrating method |
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| CN107544600A (en) * | 2017-09-05 | 2018-01-05 | 北京时代民芯科技有限公司 | A kind of adjustable band-gap reference circuit of numeral |
| CN108052151A (en) * | 2017-12-14 | 2018-05-18 | 上海艾为电子技术股份有限公司 | A kind of bandgap voltage reference without clamped amplifier |
| CN108052151B (en) * | 2017-12-14 | 2020-10-27 | 上海艾为电子技术股份有限公司 | Band-gap reference voltage source of no-clamping operational amplifier |
| CN109150164A (en) * | 2018-08-13 | 2019-01-04 | 广州瀚辰信息科技有限公司 | Generate the chip of constant reference current |
| CN112578840A (en) * | 2020-12-09 | 2021-03-30 | 杭州米芯微电子有限公司 | Method, system and storage medium for calibrating reference voltage by using temperature |
| CN112965565A (en) * | 2021-02-08 | 2021-06-15 | 苏州领慧立芯科技有限公司 | Band gap reference circuit with low temperature drift |
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Application publication date: 20120215 |