CN104007777B - A kind of current source generator - Google Patents
A kind of current source generator Download PDFInfo
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- CN104007777B CN104007777B CN201310061084.5A CN201310061084A CN104007777B CN 104007777 B CN104007777 B CN 104007777B CN 201310061084 A CN201310061084 A CN 201310061084A CN 104007777 B CN104007777 B CN 104007777B
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- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
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Abstract
The invention discloses a kind of current source generator, including: band gap source nucleus module, it is used for producing stable reference voltage; Isolation module one, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation; Filtration module, is connected with described isolation module one, for the described stable reference voltage after isolation noise is filtered; Reference current generator, is connected with described filtration module, is used for producing reference current; Isolation module two, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation; PTAT current generator, is connected with described isolation module two, for producing the electric current of positive temperature coefficient. The present invention overcomes, by the band gap source nucleus module containing preLDO, the defect that supply voltage is high, it is achieved low power supply, low-power consumption purpose; Isolation module, filtration module is adopted to achieve the purpose being provided simultaneously with low-power consumption, low noise and high PSRR.
Description
Technical field
The present invention relates to microelectronics techniques field, particularly relate to a kind of current source generator containing a reference source.
Background technology
In electronic device field, particularly in the design of mobile phone radio frequency communication IC, it is required for producing low-power consumption, high PSRR (PowerSupplyRejectionRatio by band gap source (bandgap), PSRR), low noise, ultra low temperature coefficient, adjustable accurate voltage and current, also need to produce the electric current of accurate positive temperature coefficient, as being low to moderate the low current of 1uA, 5uA simultaneously. More important for a SOC (SystemonChip, SOC(system on a chip)) chip, it is necessary to low cost, then rely on the adjustable of numeral, it is necessary to high PSRR, low output impedance, low-power consumption, also want area little, be suitable for integrated.
If Fig. 1 is the structural representation of common band gap source, utilize the device number ratio of D1 and D2, and it is equal to utilize amplifier that Va and Vb is clamped down on, then debug the resistance value of suitable R1, R2, R3, obtain reference voltage V ref, complete the design of current generator. But this structure can only produce accurate reference voltage, its power consumption and PSRR performance are general, it is desirable to obtain a low-power consumption, high PSRR, low noise a reference source then do not reach.
For modern highly integrated SOC, the upset of digital signal all can bring the noise source of inherence, very big impact is formed for crucial analog circuit, by AC (accumulating register) precision of the crosstalk reduction band gap source of power supply, therefore, one current generator in broad spectrum with high PSRR of design just seems critically important.
PSRR is generally relatively larger at low frequency, more weak when intermediate frequency, becomes again big when high frequency.
Meanwhile, a reference source needs the impedance that output is low, so in a very wide frequency range, when noise source in parallel, can be effectively reduced the influence of fluctuations to output.
The fluctuation factor of band gap source has: power-supply fluctuation, output pulsation, technological fluctuation (corner), device mismatch, encapsulation impact, temperature fluctuation, as shown in table 1:
Various source of errors in table 1 band gap source are summed up
| Source of error | DC | AC | Randomness | Systematicness | Influence degree |
| Technological fluctuation | Yes | No | YES | No | Very big |
| Encapsulation Change | Yes | No | YES | Yes | Greatly |
| Power-supply fluctuation | Yes | YES | No | Yes | Very big |
| The fluctuation of load | Yes | YES | No | Yes | Greatly |
| Temperature fluctuation | Yes | No | No | Yes | Little |
In order to reduce the fluctuation of temperature range, the temperature-compensating skill of many high-orders develops, and the resistance ratios such as orthogonal temperature-compensating, index temperature-compensating, section linear compensating, temperature correlation compensates.Basic ideas are to realize mathematical function to offset the high-order temperature coefficient of PN junction. But these methods require accurate current mirror coupling, otherwise introduce error voltage in reference voltage output. So, the accurate benchmark source that various high-performance combine is limited by technique and domain.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of current source generator, problem during in order to solve current source generator difference in prior art with low-power consumption, high PSRR, low noise, it is provided that a kind of only small current source and one of varying with temperature raises the current source of (PTAT) with temperature rising.
For solving above-mentioned technical problem, the present invention provides a kind of current source generator, including:
Band gap source nucleus module, is used for producing stable reference voltage;
Isolation module one, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation;
Filtration module, is connected with described isolation module one, for the described stable reference voltage after isolation noise is filtered;
Reference current generator, is connected with described filtration module, is used for producing reference current;
Isolation module two, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation;
PTAT current generator, is connected with described isolation module two, for producing the electric current of positive temperature coefficient.
Further, described band gap source nucleus module includes: preLDO circuit, mos field effect transistor MP1, MP2, MP3, MP4, MN1 and MN2, and audion PNP1, PNP2 and PNP3; Wherein, the grid of MP1 is connected with the grid of MP2, MP3, MP4 respectively; MP1, MP2, MP3 and MP4 source electrode be all connected with preLDO circuit; The grid of MP2 drains with it and is connected; The grid of MN1 is connected with the grid of MN2, and the grid of MN1 drains with it and is connected; MP1, MP2, MP3 and MP4 source class link together; The drain electrode of MP1 is connected with the drain electrode of MN1; The drain electrode of MP2 is connected with the drain electrode of MN2; The source electrode of MN1 is connected by the emitter stage of resistance R1 and PNP1, and the source electrode of MN2 is connected with the emitter stage of PNP2, and the base stage of PNP1 is connected with the base stage of PNP2; The emitter stage of PNP2 is connected by the drain electrode of resistance R2 and MP3; The emitter stage of PNP3 is connected by the drain electrode of resistance R3 and MP4, and the base stage of PNP3 is connected with its colelctor electrode; PNP1, PNP2 and PNP3 colelctor electrode link together.
Further, MP1, MP2, MN1 and MN2 pipe constitute automatic biasing image current source structure; Regulating the breadth length ratio of MP1, MP2, MP3 and MP4, making size of current in MP1, MP2, MP3 and MP4 is 1:1:4:1; MN1 and MN2 forms N-type current mirror, and its drain electrode amplifier is forced into equal.
Further, described preLDO circuit includes: error amplifier, mos field effect transistor PM6 and NM7; Wherein two inputs of error amplifier are connected with the drain electrode of MP1 and MP2 respectively, and outfan is connected with the drain electrode of PM6 and the grid of NM7 respectively; The drain electrode of PM6 connects with the drain electrode of NM7; The source ground of NM7.
Further, described error amplifier includes: mos field effect transistor PM1, PM2, PM3, PM4, NM1, NM2 and NM3; Wherein, the grid of PM1 is connected with the grid of PM2, and the source electrode of PM1 is connected with the source electrode of PM2, the drain electrode of PM1 is connected with the drain electrode of NM1, the grid of PM1 drains with it and is connected, and the drain electrode of PM2 is connected with the source electrode of PM3, PM4 simultaneously, and the drain electrode of PM3 is connected with the drain electrode of NM2;The drain electrode of PM4 is connected with the drain electrode of NM3, the drain electrode of NM3 is connected with its grid, NM1, NM2 and NM3 grid link together, NM1, NM2 and NM3 source electrode link together, the grid of PM3 and two inputs A, B that the grid of PM4 is error amplifier EA, the source electrode of PM4 is the outfan V_out of error amplifier EA.
Further, described isolation module one includes: operational amplifier, and wherein the negative terminal of operational amplifier is connected with outfan;
Described isolation module one is identical with isolation module two structure.
Further, described filtration module includes the mos capacitance and the resistance that are connected to each other,
Further, wherein, in described filtration module the resistance of resistance more than 50k Ω and less than 200k Ω; The capacitance of mos capacitance is more than 0.1nf and less than 1nf.
Further, described current source generator also includes:
Self-calibrating resistance module, is connected between filtration module and reference current generator, for providing up the resistance value of setting accuracy.
Further, described self-calibrating resistance module includes: resistance corrector and resistance series controller, resistance comparator; Wherein, resistance comparator is by precise reference voltage and treats to compare than voltage, and result of the comparison feeds back to resistance corrector and is corrected, and adjusts resistance value by resistance series controller, produces reciprocal voltage to be compared; When precise reference voltage with when than voltage in the set point of resistance comparator, get the voltage of calibration.
The present invention has the beneficial effect that:
The present invention overcomes, by the band gap source nucleus module containing preLDO, the defect that supply voltage is high, it is achieved low power supply, low-power consumption purpose; Isolation module, filtration module is adopted to achieve the purpose being provided simultaneously with low-power consumption, low noise and high PSRR.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing band gap source;
Fig. 2 is the structural representation of a kind of current source generator in the embodiment of the present invention;
Fig. 3 is the circuit theory diagrams of band gap source nucleus module and PTAT current generator in the embodiment of the present invention;
Fig. 4 is the circuit theory diagrams of preLDO circuit in the embodiment of the present invention;
Fig. 5 is the circuit theory diagrams of error amplifier in the embodiment of the present invention;
Fig. 6 is the circuit theory diagrams of isolation module in the embodiment of the present invention;
Fig. 7 is the circuit theory diagrams of filtration module in the embodiment of the present invention;
Fig. 8 is the structural representation of another kind of current source generator in the embodiment of the present invention;
Fig. 9 is resistance calibration algorithm schematic diagram in the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with accompanying drawing and embodiment, the present invention is further elaborated. Should be appreciated that specific embodiment described herein is only in order to explain the present invention, does not limit the present invention.
The invention provides one and realize low power supply, low-power consumption, accurate adjustable current source generator based on PRE-LDO structure (pre-low dropout voltage regulator), employing Isolation way.
For PSRR, mainly adopt the Pre-LDO pre-adjustment structure of cascode automatic biasing structure or input voltage, between low-voltage and low-power consumption, the way such as trade off;
For low noise, it is considered to the selection such as the metal-oxide-semiconductor of long Length, the employing of isolation structure, even some special considerations, the introducing of such as filter structure of device;
For the current generator of intense adjustment, by controlling technology realize in conjunction with modern digital microelectric technique, state machine.
Be based on the consideration of above multiple high performance index, the embodiment of the present invention provide a kind of can the current source generator that simultaneously realizes of multinomial high performance index.
As in figure 2 it is shown, the present embodiments relate to a kind of current source generator, including:
Band gap source nucleus module, is used for producing stable reference voltage;
Isolation module one, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation;
Filtration module, is connected with described isolation module one, for the described stable reference voltage after isolation noise is filtered;
Reference current generator, is connected with described filtration module, is used for producing reference current;
Isolation module two, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation;
PTAT current generator, is connected with described isolation module two, for producing the electric current of positive temperature coefficient.
As it is shown on figure 3, band gap source nucleus module includes: preLDO circuit, mos field effect transistor MP1, MP2, MP3, MP4, MN1 and MN2, and audion PNP1, PNP2 and PNP3; Wherein, the grid of MP1 is connected with the grid of MP2, MP3, MP4 respectively; MP1, MP2, MP3 and MP4 source electrode be all connected with preLDO circuit; The grid of MP2 drains with it and is connected; The grid of MN1 is connected with the grid of MN2, and the grid of MN1 drains with it and is connected; MP1, MP2, MP3 and MP4 source class link together; The drain electrode of MP1 is connected with the drain electrode of MN1; The drain electrode of MP2 is connected with the drain electrode of MN2; The source electrode of MN1 is connected by the emitter stage of resistance R1 and PNP1, and the source electrode of MN2 is connected with the emitter stage of PNP2, and the base stage of PNP1 is connected with the base stage of PNP2; The emitter stage of PNP2 is connected by the drain electrode of resistance R2 and MP3; The emitter stage of PNP3 is connected by the drain electrode of resistance R3 and MP4, and the base stage of PNP3 is connected with its colelctor electrode; PNP1, PNP2 and PNP3 colelctor electrode link together.
PNP1 and PNP2, PNP3 are horizontal PNP pipe. MP1, MP2, MN1 and MN2 pipe constitute automatic biasing image current source structure, it is therefore an objective to increasing output resistance, the electric current that reduction channel modulation effect causes does not mate, thus the error reduced between image current. By regulating the breadth length ratio of MP1～MP4, size of current relation in branch road MP1, MP2, MP3 and MP4 is made in Fig. 3 to meet 1:1:4:1. MN1 and MN2 forms N-type current mirror, its drain electrode amplifier is forced into equal, MN1, MN2 form the bleeder circuit superposition by MP2 and MP3 simultaneously, negative temperature coefficient part (CTAT) and positive temperature coefficient part (PTAT) constitute stable reference voltage Vref. MP1 and MP2, MP3, MP4 pipe are P type current mirror image tubes, and MN1 and MN2 also constitutes current mirror, are N-type electric current common gate structures, and R1, R2 and PNP1 and PNP2 are the audions producing PTAT part. PNP3 and R3 is mirror image and exports PTAT current.
Assume that supply voltage is Vdd, output is Vo, VoAnd VddInternal resistance be rds,VoOutput impedance over the ground is Zo, the internal resistance of feedback loop is Zo-ref. Then
Zo-refWhen loop gain is significantly high effectively, impact PSRR from low frequency to intermediate frequency; ZoWhen loop gain is very low effectively, impact PSRR from intermediate frequency to high frequency. The addition of PreLDO circuit, strengthens Zo-ref, improve the low frequency PSRR to intermediate frequency. It addition, can improve the principle of PSRR according to power supply dividing potential drop, after adding PreLDO circuit, PSRR is greatly improved, and noise (Noise) also improves simultaneously.
Fig. 4 is the circuit theory diagrams of preLDO circuit, and preLDO circuit includes: error amplifier EA, mos field effect transistor PM6 and NM7; Two inputs of error amplifier EA are connected with the drain electrode of MP1 and MP2 respectively, and outfan is connected with the drain electrode of PM6 and the grid of NM7 respectively;The drain electrode of PM6 connects with the drain electrode of NM7; The source ground of NM7.
The output of error amplifier EA is connected into source follower, and the drain feedback of NM7 is to the drain electrode of PM6, and this drain electrode directly exports into the output Vafterldo of preLDO circuit.
The structure of error amplifier EA is as it is shown in figure 5, error amplifier EA includes: mos field effect transistor PM1, PM2, PM3, PM4, NM1, NM2 and NM3; Wherein, the grid of PM1 is connected with the grid of PM2, and the source electrode of PM1 is connected with the source electrode of PM2, the drain electrode of PM1 is connected with the drain electrode of NM1, the grid of PM1 drains with it and is connected, and the drain electrode of PM2 is connected with the source electrode of PM3, PM4 simultaneously, and the drain electrode of PM3 is connected with the drain electrode of NM2; The drain electrode of PM4 is connected with the drain electrode of NM3, the drain electrode of NM3 is connected with its grid, NM1, NM2 and NM3 grid link together, NM1, NM2 and NM3 source electrode link together, the grid of PM3 and two inputs A, B that the grid of PM4 is error amplifier EA, the source electrode of PM4 is the outfan V_out of error amplifier EA.
Error amplifier EA is based on the amplifier structure of PMOS and becomes antisymmetry with NMOS, and so the benefit of design is that noise (Noise) reduces further.
Fig. 6 is the circuit theory diagrams of isolation module, and the isolation module one in Fig. 2 is identical with isolation module two structure, below, it is described with isolation module one. Isolation module one includes: operational amplifier, and wherein the negative terminal of operational amplifier is connected with outfan. Connected by the negative terminal of operational amplifier and output, the simulation buffer obtained produces isolation, input voltage is served virtual impedance, select cascode structure amplifier isolation noise, select metal-oxide-semiconductor be long raceway groove, big W/L device to obtain little output headroom and big output resistance, such isolation module for raising noise performance be highly profitable.
Fig. 7 is the circuit theory diagrams of filtration module, and filtration module includes the mos capacitance and the resistance that are connected to each other, and wherein, the resistance of resistance is more than 50k Ω and less than 200k Ω; The capacitance of mos capacitance is more than 0.1nf and less than 1nf. Filtration module is realized by the big resistance that can realize on integrated circuit and big mos capacitance, improves the intermediate frequency PSRR to high frequency; It is achieved in that the electric capacity being avoided that IC chip off-chip is external, reduces BOM materials.
It addition, the current source generator of the embodiment of the present invention also includes:
Self-calibrating resistance module, is connected between filtration module and reference current generator, is used for providing resistance value accurately.
As shown in Figure 8, self-calibrating resistance module includes the structure of self-calibrating resistance module: resistance corrector and resistance series controller, resistance comparator, and Fig. 9 is resistance calibration algorithm schematic diagram. Resistance comparator is by precise reference voltage and treats to compare than voltage, produce overgauge or minus deviation, result of the comparison feeds back to resistance corrector (RCAL) and is corrected, (resistance after such as multiple resistor coupled in parallel is as final output resistance to change switching network by resistance series controller, each resistance connects a switch, by controlling the Guan Bi of switch, adjusts the resistance of output resistance), adjust resistance value, produce reciprocal voltage to be compared; When precise reference voltage with when than voltage in the set point of resistance comparator, digital algorithm engine is fixed up, and gets the voltage of calibration. That is: by driving the digital algorithm engine control logic of Approach by inchmeal, until realizing the correction to fluctuation.In Fig. 8, BG_top represents the current source generator in Fig. 2, and namely Fig. 8 is further expanding of the current source generator to Fig. 2.
Correcting current module is also contains in Fig. 8, correcting current module includes: current corrector and current controller, current-to-voltage convertor and current comparator, wherein, the Iptat1 that current controller mirror image from Fig. 2 goes out becomes 1/2*Iptat1 by different switchgear distribution mirror images, 1/4*Iptat1, the various combination electric current of 1/8*Iptat1, may finally form the different electric currents such as from 5/8*Iptat1 to 11/8*Iptat1; Current corrector (ICAL) is the module that digital hardware realizes, it is possible to select the different configurations of current controller according to the output of comparator; The PTAT voltage of generation and the Vxu1 (accessed by outside precise resistances and produce) obtaining correcting are compared by current comparator, and result of the comparison feeds back to current corrector and is corrected, until fluctuation is corrected.
It should be noted that and be no matter resistance comparator or current comparator all the voltage compared, why so name, be resistance is being corrected or on electric current is corrected for the ease of understanding its effect.
Resistance corrects front, and current correction is rear, so in the circuit after current source generator powers on, will the voltage and current that produce due to resistance, electric capacity, metal-oxide-semiconductor, PNP pipe fluctuation be corrected.
As can be seen from the above-described embodiment, by supply voltage being added to preLDO or operational amplifier, the output voltage of operational amplifier provides bias voltage for whole core circuit, the bias voltage of whole core circuit is independent of supply voltage so that whole band-gap reference circuit has very high PSRR. Simulation result based on SPECTRE shows, its PSRR is up to 120dB, in-40 DEG C～125 DEG C temperature ranges, temperature coefficient is 18ppm/ DEG C, and power consumption is only 400uA, it is possible to be widely used in the integrated circuit modules such as A/D converter, D/A converter, biasing circuit. By isolation module one and isolation module two, increase loop gain, can effective PSRR PSRR, and improve noise performance; Wherein can filter some noises with electric capacity; It is transformed on the predominating path of output increases electric capacity can go out except noise at power supply noise.
The current source generator of the present invention has high PSRR, ultra low temperature coefficient, extremely low noiseproof feature and positive temperature coefficient, low noise and other advantages, provides accurate electric current can to a lot of occasions.
Although being example purpose, having been disclosed for the preferred embodiments of the present invention, it is also possible for those skilled in the art will recognize various improvement, increase and replacement, and therefore, the scope of the present invention should be not limited to above-described embodiment.
Claims (9)
1. a current source generator, it is characterised in that including:
Band gap source nucleus module, is used for producing stable reference voltage;
Isolation module one, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation;
Filtration module, is connected with described isolation module one, for the described stable reference voltage after isolation noise is filtered;
Reference current generator, is connected with described filtration module, is used for producing reference current;
Isolation module two, is connected with described band gap source nucleus module, for described stable reference voltage is carried out noise isolation;
PTAT current generator, is connected with described isolation module two, for producing the electric current of positive temperature coefficient;
Described band gap source nucleus module includes: preLDO circuit, mos field effect transistor MP1, MP2, MP3, MP4, MN1 and MN2, and audion PNP1, PNP2 and PNP3;Wherein, the grid of MP1 is connected with the grid of MP2, MP3, MP4 respectively; MP1, MP2, MP3 and MP4 source electrode be all connected with preLDO circuit; The grid of MP2 drains with it and is connected; The grid of MN1 is connected with the grid of MN2, and the grid of MN1 drains with it and is connected; MP1, MP2, MP3 and MP4 source class link together; The drain electrode of MP1 is connected with the drain electrode of MN1; The drain electrode of MP2 is connected with the drain electrode of MN2; The source electrode of MN1 is connected by the emitter stage of resistance R1 and PNP1, and the source electrode of MN2 is connected with the emitter stage of PNP2, and the base stage of PNP1 is connected with the base stage of PNP2; The emitter stage of PNP2 is connected by the drain electrode of resistance R2 and MP3; The emitter stage of PNP3 is connected by the drain electrode of resistance R3 and MP4, and the base stage of PNP3 is connected with its colelctor electrode; PNP1, PNP2 and PNP3 colelctor electrode link together.
2. current source generator as claimed in claim 1, it is characterised in that MP1, MP2, MN1 and MN2 pipe constitute automatic biasing image current source structure; Regulating the breadth length ratio of MP1, MP2, MP3 and MP4, making size of current in MP1, MP2, MP3 and MP4 is 1:1:4:1; MN1 and MN2 forms N-type current mirror, and its drain electrode amplifier is forced into equal.
3. current source generator as claimed in claim 1 or 2, it is characterised in that described preLDO circuit includes: error amplifier, mos field effect transistor PM6 and NM7; Wherein two inputs of error amplifier are connected with the drain electrode of MP1 and MP2 respectively, and outfan is connected with the drain electrode of PM6 and the grid of NM7 respectively; The drain electrode of PM6 connects with the drain electrode of NM7; The source ground of NM7.
4. current source generator as claimed in claim 3, it is characterised in that described error amplifier includes: mos field effect transistor PM1, PM2, PM3, PM4, NM1, NM2 and NM3; Wherein, the grid of PM1 is connected with the grid of PM2, and the source electrode of PM1 is connected with the source electrode of PM2, the drain electrode of PM1 is connected with the drain electrode of NM1, the grid of PM1 drains with it and is connected, and the drain electrode of PM2 is connected with the source electrode of PM3, PM4 simultaneously, and the drain electrode of PM3 is connected with the drain electrode of NM2; The drain electrode of PM4 is connected with the drain electrode of NM3, the drain electrode of NM3 is connected with its grid, NM1, NM2 and NM3 grid link together, NM1, NM2 and NM3 source electrode link together, the grid of PM3 and two inputs A, B that the grid of PM4 is error amplifier EA, the source electrode of PM4 is the outfan V_out of error amplifier EA.
5. the current source generator as described in claim 1,2 or 4, it is characterised in that described isolation module one includes: operational amplifier, and wherein the negative terminal of operational amplifier is connected with outfan;
Described isolation module one is identical with isolation module two structure.
6. current source generator as claimed in claim 5, it is characterised in that described filtration module includes the mos capacitance and the resistance that are connected to each other.
7. current source generator as claimed in claim 6, it is characterised in that wherein, in described filtration module, the resistance of resistance is more than 50k Ω and less than 200k Ω; The capacitance of mos capacitance is more than 0.1nf and less than 1nf.
8. current source generator as claimed in claim 1 or 2, it is characterised in that described current source generator also includes:
Self-calibrating resistance module, is connected between filtration module and reference current generator, for providing up the resistance value of setting accuracy.
9. current source generator as claimed in claim 8, it is characterised in that described self-calibrating resistance module includes: resistance corrector and resistance series controller, resistance comparator;Wherein, resistance comparator is by precise reference voltage and treats to compare than voltage, and result of the comparison feeds back to resistance corrector and is corrected, and adjusts resistance value by resistance series controller, produces reciprocal voltage to be compared; When precise reference voltage with when than voltage in the set point of resistance comparator, get the voltage of calibration.
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| PCT/CN2013/090719 WO2014131311A1 (en) | 2013-02-27 | 2013-12-27 | Current source generator |
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| US9342084B1 (en) * | 2015-02-20 | 2016-05-17 | Silicon Laboratories Inc. | Bias circuit for generating bias outputs |
| CN105759894A (en) * | 2016-04-20 | 2016-07-13 | 佛山臻智微芯科技有限公司 | Double-purpose current source generator |
| CN109068241B (en) * | 2018-08-27 | 2024-05-03 | 上海艾为电子技术股份有限公司 | Digital audio power amplifier system |
| CN109298745A (en) * | 2018-10-12 | 2019-02-01 | 广州智慧城市发展研究院 | The synchronous circuit and method for realizing linear voltage stabilization and dual voltage domains reference current source |
| CN111399583B (en) * | 2020-03-16 | 2021-10-22 | 西安理工大学 | LDO circuit with high power supply rejection ratio in wide load range |
| CN111142607B (en) * | 2020-03-16 | 2021-09-03 | 成都纳能微电子有限公司 | Voltage conversion current circuit with high power supply rejection ratio |
| CN112230704B (en) * | 2020-11-17 | 2022-01-04 | 普冉半导体(上海)股份有限公司 | Reference current source circuit |
| CN113311898B (en) * | 2021-07-30 | 2021-12-17 | 唯捷创芯(天津)电子技术股份有限公司 | LDO circuit with power supply suppression, chip and communication terminal |
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| CN101510108A (en) * | 2008-02-12 | 2009-08-19 | 精工爱普生株式会社 | Reference voltage generating circuit, integrated circuit device, and signal processing apparatus |
| CN102200796A (en) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | Band-gap reference source circuit with stable low-offset and low-noise noise chopped wave |
| CN102427295A (en) * | 2011-12-09 | 2012-04-25 | 成都芯源系统有限公司 | Switching regulator circuit |
| CN102545780A (en) * | 2010-12-23 | 2012-07-04 | 鼎亿数码科技(上海)有限公司 | Biasing circuit of voltage-controlled oscillator |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100588339B1 (en) * | 2004-01-07 | 2006-06-09 | 삼성전자주식회사 | Current reference circuit with voltage-current converter having auto-tuning function |
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2013
- 2013-02-27 CN CN201310061084.5A patent/CN104007777B/en active Active
- 2013-12-27 WO PCT/CN2013/090719 patent/WO2014131311A1/en active Application Filing
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| US6057727A (en) * | 1997-10-20 | 2000-05-02 | Stmicroelectronics S.A. | Accurate constant current generator |
| CN101276227A (en) * | 2007-03-26 | 2008-10-01 | 松下电器产业株式会社 | Reference current circuit |
| CN101510108A (en) * | 2008-02-12 | 2009-08-19 | 精工爱普生株式会社 | Reference voltage generating circuit, integrated circuit device, and signal processing apparatus |
| CN102200796A (en) * | 2010-03-25 | 2011-09-28 | 上海沙丘微电子有限公司 | Band-gap reference source circuit with stable low-offset and low-noise noise chopped wave |
| CN102545780A (en) * | 2010-12-23 | 2012-07-04 | 鼎亿数码科技(上海)有限公司 | Biasing circuit of voltage-controlled oscillator |
| CN102427295A (en) * | 2011-12-09 | 2012-04-25 | 成都芯源系统有限公司 | Switching regulator circuit |
Also Published As
| Publication number | Publication date |
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| WO2014131311A1 (en) | 2014-09-04 |
| CN104007777A (en) | 2014-08-27 |
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