CN104977963A - Free-operational amplifier low power-consumption high power supply rejection ratio band-gap reference circuit - Google Patents
Free-operational amplifier low power-consumption high power supply rejection ratio band-gap reference circuit Download PDFInfo
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- CN104977963A CN104977963A CN201510398432.7A CN201510398432A CN104977963A CN 104977963 A CN104977963 A CN 104977963A CN 201510398432 A CN201510398432 A CN 201510398432A CN 104977963 A CN104977963 A CN 104977963A
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Abstract
The invention provides a free-operational amplifier low power-consumption high power supply rejection ratio band-gap reference circuit comprising a positive temperature coefficient circuit, a negative temperature coefficient circuit and an output circuit. Three output branches of the output circuit are included by two PMOS pipes in a serial connection with each other and further a biasing circuit having a first biasing PMOS pipe, a second biasing PMOS pipe in a serial connection with the first biasing PMOS pipe and a biasing NMOS pipe; the two biasing PMOS pipes are in a parallel connection with the PMOS pipe of the output circuit; a drain electrode of the second biasing PMOS pipe is connected with a drain electrode of the biasing NMOS pipe; a grid of the biasing NMOS pipe is connected with a collector electrode of a NO.0 triode of the positive temperature coefficient circuit; a source electrode of the biasing NMOS pipe is connected with an emitting electrode of a NO.1 triode of the positive temperature coefficient circuit; and a collector electrode of the No.1 triode is connected with a base electrode. With the addition of the biasing circuit, triode collector electrode voltage is remained the same in the positive temperature coefficient circuit, instead of changing with power supply voltage, so circuit reference currents are kept the same; and inhibiting ability of the output voltage on power supply changes is improved.
Description
Technical field
The invention belongs to integrated circuit fields, relate to a kind of band-gap reference circuit without amplifier low-power consumption high PSRR.
Background technology
Along with the develop rapidly of system integration technology, reference voltage source has become on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuit) and nearly all digital simulator system.Reference voltage source is the important component part of VLSI (very large scale integrated circuit) and electronic system, can be widely used in precision comparator, A/D and D/A converter, random access memories, flash memory and system integrated chip.Band-gap reference is one most popular in all reference voltages, and its Main Function provides stable reference voltage or reference current in integrated circuits, this just require band-gap reference to the change of supply voltage and the change of temperature insensitive.
As shown in Figure 1, for of the prior art without amplifier band-gap reference voltage circuit.This circuit comprises PTC circuit, negative temperature parameter circuit and output circuit.PTC circuit specifically comprises two NPN triode Q0 and Q1, and resistance R1, and wherein the collector of Q0 is connected with base stage; Negative temperature parameter circuit comprises NPN triode Q2 and resistance R2.Output circuit comprises three PMOS MP2, MP3 and MP4, exports for electric current being converted to voltage.Wherein, the area ratio between the emitter-base stage of triode Q1 and Q0 be N:1, MP2, MP3 and MP4 drain and gate between voltage difference be 2:2:K.
The expression formula of bandgap voltage reference VBG is: VBG=VBE (Q2)+[Δ VBE/R1] * R2, wherein, VBE (Q2) is for having the base-emitter voltage of the Q2 of negative temperature coefficient, Δ VBE=ln (N) * kT/e is the base-emitter voltage difference of Q0 and Q1, this voltage difference has positive temperature coefficient (PTC), T is temperature, k=1.38 × 10
-23j/K, e=1.6 × 10
-19c.
As can be seen from the expression formula of above-mentioned bandgap voltage reference VBG, expect the VBG wanted, must carry out fine adjustment, and the adjustment of temperature coefficient be more difficult to temperature coefficient, therefore, this circuit is difficult to realize the adjustment to bandgap voltage reference.
Summary of the invention
The object of the invention is to propose a kind of band-gap reference circuit without amplifier low-power consumption high PSRR, to solve the problem that bandgap voltage reference is difficult to regulate.
Embodiments provide a kind of band-gap reference circuit without amplifier low-power consumption high PSRR, comprise PTC circuit, negative temperature parameter circuit and output circuit,
Three output branchs of described output circuit comprise two PMOS of series connection respectively;
Described reference circuit also comprises biasing circuit, and described biasing circuit comprises the first bias PMOS pipe of series connection, the second bias PMOS pipe and biased NMOS tube, and two bias PMOS pipes are in parallel with the PMOS in output circuit; The drain electrode of the second bias PMOS pipe drains with described biased NMOS tube and is connected; The grid of described biased NMOS tube is connected with the collector of the 0th triode in PTC circuit, and the source electrode of described biased NMOS tube is connected with the emitter of the first triode in PTC circuit; The collector of described first triode is connected with base stage.
In foregoing circuit, preferably:
Divider resistance is connected with between the drain electrode of the second bias PMOS pipe and the drain electrode of biased NMOS tube;
In biasing circuit and three output branchs, the grid of first respective PMOS is connected, and is connected to the drain electrode of the second bias PMOS pipe;
In biasing circuit and three output branchs, the grid of second respective PMOS is connected, and is connected to the drain electrode of biased NMOS tube.
In foregoing circuit, preferably, also comprise:
First output resistance of series connection and the second output resistance, be connected in parallel on the two ends of described negative temperature parameter circuit, the tie point of described first output resistance and the second output resistance is as voltage output end.
In foregoing circuit, preferably:
First output resistance and/or the second output resistance, its resistance is adjustable.
In foregoing circuit, preferably:
Described negative temperature parameter circuit comprises the second triode and negative temperature resistance.
The technical scheme of the embodiment of the present invention, improves for low-voltage and low-power dissipation demand to meet chip, requires that higher chip has earth shaking meaning for quiescent dissipation.In this band-gap reference circuit, owing to no longer introducing amplifier, so the problem that offset voltage affects for band gap (bandgap) output voltage also would not be produced.
In order to increase the inhibiting effect of this circuit for supply voltage, add a road biasing circuit, can ensure in PTC circuit, triode Q0 collector (collector) is held with the collector (collector) of Q1 and is consistent, the reference current of circuit will be changed with the change of supply voltage, improve the rejection ability of output voltage for power source change.
In order to reduce the power consumption of this circuit, in biasing circuit, adding divider resistance, for the grid of PMOS each in this circuit provides voltage, other biasing circuit need not be designed for the grid of each PMOS and voltage is provided, thus reducing the power consumption of circuit.
In order to obtain the output of wider band gap reference, add again a road output resistance in addition, can obtain the different output voltage values of zero temp shift temperature coefficient by adjusting the resistance of output resistance, temperature coefficient does not change with the change of resistance value and output voltage values.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of existing band-gap reference circuit;
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is the simulation result schematic diagram of the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not entire infrastructure.
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the embodiment of the present invention, this comprises PTC circuit, negative temperature parameter circuit and output circuit without the band-gap reference circuit of amplifier low-power consumption high PSRR.
Three output branchs of above-mentioned output circuit comprise two PMOS of series connection respectively.
Concrete, PTC circuit specifically comprises two NPN triodes, i.e. the 0th triode Q0 and the first triode Q1, and positive temperature and resistance R1.Q0 and Q1 is that mirror image is arranged, and the base stage interconnection of Q0 and Q1, the emitter of Q1 is connected with one end of R1, and the other end of R1 is connected with the emitter of Q0, and the collector of Q0 with Q1 is connected with output circuit respectively.Wherein, the area ratio between the emitter-base stage of Q1 and Q0 is N:1.
Negative temperature parameter circuit comprises a NPN triode, i.e. the second triode Q2 and negative temperature resistance R2.The emitter of Q2 is connected with R2, and the collector of Q2 is connected with grid, and is connected with output circuit.
Output circuit comprises PMOS MP3, MP4, MP7, MP5, MP6 and MP8, exports for electric current being converted to voltage.MP3, MP4 and MP7 are in parallel, and namely MP3, MP4 are connected with the grid of MP7, and source electrode is connected, and drain electrode connects MP5, MP6 and MP8 respectively.MP5, MP6 are connected with the grid of MP8, and drain electrode connects the collector of triode Q0, Q1 and Q2 in PTC circuit and negative temperature parameter circuit respectively.Wherein, the voltage difference between the drain and gate of MP3, MP4 and MP7 is 2:2:K, and accordingly, the voltage difference between the drain and gate of MP5, MP6 and MP8 is also 2:2:K.
In the present embodiment, also comprise further: biasing circuit.Described biasing circuit comprises the first bias PMOS pipe MP1, the second bias PMOS pipe MP2 and biased NMOS tube MN1 of series connection, two bias PMOS pipes are in parallel with the PMOS in output circuit, concrete, MP1 is in parallel with first PMOS of output circuit Zhong Ge branch, namely grid is connected, source electrode is connected, and drain electrode connects the source electrode of MP2; The grid of MP2 is connected with the grid of second PMOS of output circuit Zhong Ge branch, and the drain electrode of MP2 drains with MN1 and is connected; The grid of MN1 is connected with the collector of Q0 in PTC circuit, and the source electrode of MN1 is connected with the emitter of Q1 in PTC circuit; The collector of Q1 is connected with base stage.
The technical scheme of the embodiment of the present invention is in order to increase the inhibiting effect of this circuit for supply voltage, add the biasing circuit that road MP1 and MN1 forms, can ensure that Q0 collector (collector) is consistent with the collector (collector) of Q1, the reference current of circuit will be changed with the change of supply voltage, improve the rejection ability of output voltage for power source change; Three output branchs of this circuit comprise two PMOS of series connection respectively, further increase the rejection ability of output voltage for power source change.
In foregoing circuit, preferably, divider resistance R4 is connected with between the drain electrode of the second bias PMOS pipe MP2 and the drain electrode of biased NMOS tube MN1; In biasing circuit and three output branchs, the grid of first respective PMOS is connected, and is connected to the drain electrode of MP2; In biasing circuit and three output branchs, the grid of second respective PMOS is connected, and is connected to the drain electrode of MN1.
In biasing circuit, add divider resistance R4, for the grid of PMOS each in this circuit provides voltage, other biasing circuit need not be designed for each PMOS grid and voltage is provided, thus reduce the power consumption of circuit.
In foregoing circuit, be preferably also provided with the first output resistance R3 and the second output resistance Rout of series connection, be connected in parallel on the two ends of described negative temperature parameter circuit, the tie point of R3 and Rout is as voltage VBG output terminal.Specifically, described negative temperature parameter circuit comprises Q2 and R2.Then R3 and Rout is connected in parallel on the two ends of Q2 and R2, and the collector of R3 and Q2 is connected.
First output resistance and/or the second output resistance, its resistance is preferably adjustable, can adjust the scope of output voltage.
The technical scheme of the embodiment of the present invention, improves for low-voltage and low-power dissipation demand to meet chip, requires that higher chip has earth shaking meaning for quiescent dissipation.In this band-gap reference circuit, owing to no longer introducing amplifier, so the problem that offset voltage affects for band gap (bandgap) output voltage also would not be produced.In order to obtain the output of wider band gap reference, add again the resistance that a road R3 and Rout forms in addition, can obtain the different output voltage values of zero temp shift temperature coefficient by adjusting the value of Rout, temperature coefficient does not change with the change of resistance value and output voltage values.
The expression formula of the output voltage VBG of foregoing circuit structure is:
VBG＝[Vbe(q2)+R2*Vt*ln(n)/R1]*(Rout/R1)
Wherein, the emitter junction voltage that Vbe (q2) is Q2, Vt=KT/q, q are electron charge (1.6*10E-19 coulomb), and K is Boltzmann constant, and T is temperature, and n is the triode quantity N of Q1.
Can find out according to this expression formula, output voltage VBG can be changed by the size adjusting Rout, and its temperature characterisitic does not change with the change of resistance Rout.Introduce the branch of two resistance composition in core circuit output voltage part, achieve output voltage adjustable when keep temperature coefficient constant.
As shown in Figure 3, in Fig. 3, transverse axis represents supply voltage VCC, and its variation range is from 1.5V-4.0V, and the longitudinal axis represents the variation range of output voltage.Output voltage VBG change curve after lines representative above adopts the embodiment of the present invention to emulate, the output voltage Vout change curve after lines representative below adopts prior art to emulate.From simulation result, supply voltage VCC changes in the scope of 1.5V-4V, and the value of output voltage VBG brings up to 5.5mV by the variation range of existing 28mV; The value of output voltage VBG can not change their temperature characterisitic with the change of adjustment (trimming) position.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (5)
1., without a band-gap reference circuit for amplifier low-power consumption high PSRR, comprise PTC circuit, negative temperature parameter circuit and output circuit, it is characterized in that:
Three output branchs of described output circuit comprise two PMOS of series connection respectively;
Described reference circuit also comprises biasing circuit, and described biasing circuit comprises the first bias PMOS pipe of series connection, the second bias PMOS pipe and biased NMOS tube, and two bias PMOS pipes are in parallel with the PMOS in output circuit; The drain electrode of the second bias PMOS pipe drains with described biased NMOS tube and is connected; The grid of described biased NMOS tube is connected with the collector of the 0th triode in PTC circuit, and the source electrode of described biased NMOS tube is connected with the emitter of the first triode in PTC circuit; The collector of described first triode is connected with base stage.
2. circuit according to claim 1, is characterized in that:
Divider resistance is connected with between the drain electrode of the second bias PMOS pipe and the drain electrode of biased NMOS tube;
In biasing circuit and three output branchs, the grid of first respective PMOS is connected, and is connected to the drain electrode of the second bias PMOS pipe;
In biasing circuit and three output branchs, the grid of second respective PMOS is connected, and is connected to the drain electrode of biased NMOS tube.
3. circuit according to claim 1, is characterized in that, also comprises:
First output resistance of series connection and the second output resistance, be connected in parallel on the two ends of described negative temperature parameter circuit, the tie point of described first output resistance and the second output resistance is as voltage output end.
4. circuit according to claim 3, is characterized in that:
First output resistance and/or the second output resistance, its resistance is adjustable.
5. circuit according to claim 4, is characterized in that:
Described negative temperature parameter circuit comprises the second triode and negative temperature resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510398432.7A CN104977963B (en) | 2015-07-08 | 2015-07-08 | A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510398432.7A CN104977963B (en) | 2015-07-08 | 2015-07-08 | A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier |
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| CN104977963A true CN104977963A (en) | 2015-10-14 |
| CN104977963B CN104977963B (en) | 2016-08-17 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105786077A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | High-order temperature drift compensation band-gap reference circuit without operational amplifier |
| CN106055013A (en) * | 2016-04-20 | 2016-10-26 | 广东工业大学 | Band-gap reference circuit without operational amplifier and with ultralow temperature drift |
| CN106873704A (en) * | 2017-02-21 | 2017-06-20 | 深圳市爱协生科技有限公司 | Reference voltage source and its positive temperature coefficient voltage generation circuit |
| CN112486240A (en) * | 2020-12-09 | 2021-03-12 | 北方工业大学 | Band-gap reference circuit controlled by common-source amplifier |
| CN114020085A (en) * | 2021-10-18 | 2022-02-08 | 杭州中科微电子有限公司 | Multi-output reference voltage generating circuit |
| CN114706442A (en) * | 2022-04-12 | 2022-07-05 | 中国电子科技集团公司第五十八研究所 | Low-power-consumption band-gap reference circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105786077A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | High-order temperature drift compensation band-gap reference circuit without operational amplifier |
| CN106055013A (en) * | 2016-04-20 | 2016-10-26 | 广东工业大学 | Band-gap reference circuit without operational amplifier and with ultralow temperature drift |
| CN106873704A (en) * | 2017-02-21 | 2017-06-20 | 深圳市爱协生科技有限公司 | Reference voltage source and its positive temperature coefficient voltage generation circuit |
| CN106873704B (en) * | 2017-02-21 | 2018-08-17 | 深圳市爱协生科技有限公司 | Reference voltage source and its positive temperature coefficient voltage generation circuit |
| CN112486240A (en) * | 2020-12-09 | 2021-03-12 | 北方工业大学 | Band-gap reference circuit controlled by common-source amplifier |
| CN114020085A (en) * | 2021-10-18 | 2022-02-08 | 杭州中科微电子有限公司 | Multi-output reference voltage generating circuit |
| CN114020085B (en) * | 2021-10-18 | 2023-10-27 | 杭州中科微电子有限公司 | Reference voltage generating circuit with multiple outputs |
| CN114706442A (en) * | 2022-04-12 | 2022-07-05 | 中国电子科技集团公司第五十八研究所 | Low-power-consumption band-gap reference circuit |
| CN114706442B (en) * | 2022-04-12 | 2023-07-14 | 中国电子科技集团公司第五十八研究所 | Low-power consumption band-gap reference circuit |
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