CN105676938B - A kind of super low-power consumption high PSRR voltage reference source circuit - Google Patents
A kind of super low-power consumption high PSRR voltage reference source circuit Download PDFInfo
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- CN105676938B CN105676938B CN201610123785.0A CN201610123785A CN105676938B CN 105676938 B CN105676938 B CN 105676938B CN 201610123785 A CN201610123785 A CN 201610123785A CN 105676938 B CN105676938 B CN 105676938B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The present invention provides a kind of super low-power consumption high PSRR voltage reference source circuit, including start-up circuit unit, current generating circuit unit and the output voltage reference circuit unit sequentially electrically connected；The start-up circuit unit, which is used to provide, starts voltage, it is to avoid voltage reference source circuit is operated in nought state area；The current generating circuit unit is used to produce operating current for output voltage reference circuit unit, while making the lower power consumption of voltage reference source circuit；The output voltage reference circuit unit is used for the voltage reference output for realizing zero-temperature coefficient and high PSRR.The present invention has the advantages that super low-power consumption, low-temperature coefficient, high PSRR, small compared with wide operating voltage range and area.
Description
Technical field
The present invention relates to voltage reference source circuit field, more particularly, to a kind of super low-power consumption high PSRR electricity
Press reference source circuit.
Background technology
Reference source circuit has and supply voltage, technique, temperature change almost unrelated outstanding advantages, therefore by widely
Applied in high-precision comparator, A/D or D/A converter, LDO voltage stabilizer and other many Analogous Integrated Electronic Circuits, it is carried
The precision and stability of the reference voltage of confession determines the final performance of whole system.
Reference source circuit mainly considers following performance indications when designing：Temperature coefficient, operating voltage range, power supply suppression
System ratio and power consumption.The output voltage of the lower i.e. reference source circuit of temperature coefficient is affected by temperature smaller, and voltage is more stable；It is larger
Working range reference source circuit can be made to be more applicable in different circuits；High PSRR illustrates a reference source output by defeated
Enter the change influence very little of voltage, so as to more stablize；Low-power consumption is requirement now to power management chip.
In a reference source design, in order to obtain temperature independent amount, typically there are opposite temperature coefficients with two
Measure and be added with appropriate weight.The base emitter voltage VBE of bipolar transistor has negative temperature coefficient, different emitter junctions
Two base emitter junction difference in voltage Δ VBE under current density have positive temperature coefficient, by both linear superpositions, then in theory
On can obtain the reference voltage of zero-temperature coefficient.
Fig. 1 is existing band-gap reference circuit.Here, amplifier is using X, Y as input, and the high-gain of amplifier makes X, Y two
The current potential approximately equal of point, and R1=R2, so the electric current for flowing through two triodes is equal, can obtain expression formula：
VBE1=VBE2+R3I (1)
The difference of Q1 and Q2 base emitter voltages is
VBE1-VBE2=VT ln n (2)
It is hereby achieved that the expression formula of output voltage：
By rationally setting n and resistance R value, then zero-temperature coefficient is obtained.
Large-scale application and development with portable electric appts, the low-power consumption of chip become the key of chip design
Index, the operating voltage of chip is also more and more lower.The too high output voltage (1.2V) of this traditional band-gap reference circuit and hardly possible
With the power consumption of reduction, and larger circuit area (use of resistance) limit to a certain extent its further development and
Using.
The content of the invention
The present invention overcomes the defect of the high power consumption described in above-mentioned prior art, and there is provided a kind of super low-power consumption high PSRR
Voltage reference source circuit, with super low-power consumption, low-temperature coefficient, high PSRR, wider operating voltage range and area
Small advantage.
In order to solve the above technical problems, technical scheme is as follows：
A kind of super low-power consumption high PSRR voltage reference source circuit, including sequentially electrically connect start-up circuit unit,
Current generating circuit unit and output voltage reference circuit unit；
The start-up circuit unit, which is used to provide, starts voltage, it is to avoid voltage reference source circuit is operated in nought state area；
The current generating circuit unit is used to produce operating current for output voltage reference circuit unit, while making voltage
The lower power consumption of reference source circuit；
The output voltage reference circuit unit is used to realize that the voltage reference of zero-temperature coefficient and high PSRR is defeated
Go out.
In a kind of preferred scheme, the start-up circuit unit includes NMOS tube MS1, MS2, and PMOS MC, MC
Drain electrode and source electrode be connected with power supply, MC grid is connected with MS2 grid, and MS2 drain electrode and source electrode draw first respectively
Enabling signal output end and the second enabling signal output end, to current generating circuit unit provide enabling signal, MS1 drain electrode with
MS2 grid connection, MS1 source ground, MS1 grid is connected to voltage reference source output terminal VREF.
MC drain electrode links together with source electrode, plays electric capacity in start-up circuit, so as to reduce circuit structure
Area.
In a kind of preferred scheme, the current generating circuit unit includes NMOS tube M1, M2, M3, M4, M11, M12
With PMOS M13, M14, M15；Described M13, M14 and M15 are connected with current-mirror structure, i.e., M13 grids are connected with drain electrode, M13,
M14 and M15 grid connects and draws generation current output terminal, and is exported with the first enabling signal of the start-up circuit unit
End connection, M13, M14 and M15 source electrode connects power supply；M3 and M4 be connected into respectively diode, i.e. M3 and the respective grids of M4 and
Drain electrode is connected, M3 and M4 source ground, and the drain electrode connection of M1 source electrode and M3, M1 drain electrode and M14 drain electrode are connected, M2's
Source electrode and M4 drain electrode connection, M2 drain electrode and M15 drain electrode are connected, and M2 drain and gate is connected with M1 grid, and
It is connected with the second enabling signal output end of the start-up circuit unit；The drain electrode of M12 grid and M1 is connected, M12 drain electrode
Drain electrode with M13 is connected, and M11 drain electrode and M12 source electrode are connected, and M11 grid is connected to drain electrode, connects into diode,
M11 source ground.
In a kind of preferred scheme, M1, M2 in the current generating circuit unit are operated in saturation region, M3, M4,
M11, M12, M13, M14, M15 are operated in sub-threshold region.
In a kind of preferred scheme, the output voltage reference circuit unit includes PMOS M10, M16, M17, M18
With NMOS tube M5, M6, M7, M8, M9；Described M16, M17, M18 grid are connected, and are used as the defeated of output voltage reference circuit unit
Enter end, be connected with the generation current output terminal of the current generating circuit unit, M16, M17, M18 source electrode connect power supply, M5's
The drain electrode connection of drain and gate and M6 grid and M16, M6 drain electrode is connected with M5 source electrode, M6 source ground, M7
Source electrode and M6 drain electrode connect, M7 drain electrode is connected with M17 drain electrode, and M7 grid is connected to reference output；M8 drain electrode
Power supply is connect, the drain electrode of M8 grid and M7 is connected, and M9 drain electrode is connected with M8 source electrode, and M9 grid is connected to the grid of the M4
Pole, the drain electrode of M10 grid and M9 is connected, M9 source electrode and M10 grounded drain, and the drain electrode of M10 source electrode and M18 is connected,
And it is connected to voltage reference source output terminal VREF。
M8, M9, M10 and M18 introduce negative-feedback so that the output resistance at VREF ends is greatly reduced, so as to greatly improve
PSRR.
In a kind of preferred scheme, all metal-oxide-semiconductors are to be operated in Asia in the output voltage reference source circuit unit
Threshold zone.
In a kind of preferred scheme, the voltage of the power supply is 1.8V.
Compared with prior art, the beneficial effect of technical solution of the present invention is：The present invention provides a kind of super low-power consumption high electricity
Source rejection ratio voltage reference source circuit, including start-up circuit unit, current generating circuit unit and the output electricity sequentially electrically connected
Press reference circuit unit；The start-up circuit unit, which is used to provide, starts voltage, it is to avoid voltage reference source circuit is operated in zero shape
State area；The current generating circuit unit is used to produce operating current for output voltage reference circuit unit, while making voltage base
The lower power consumption of quasi- source circuit；The output voltage reference circuit unit is used to realize zero-temperature coefficient and high PSRR
Voltage reference is exported.The present invention have super low-power consumption, low-temperature coefficient, high PSRR, wider operating voltage range and
The small advantage of area.
Brief description of the drawings
The circuit diagram that it is existing band-gap reference circuit that Fig. 1, which is,
Fig. 2 is the circuit diagram of super low-power consumption high PSRR voltage reference source circuit of the present invention.
Embodiment
Accompanying drawing being given for example only property explanation, it is impossible to be interpreted as the limitation to this patent；To those skilled in the art,
Some known features and its explanation may be omitted and will be understood by accompanying drawing.
Technical scheme is described further with reference to the accompanying drawings and examples.
Embodiment 1
As shown in Fig. 2 a kind of super low-power consumption high PSRR voltage reference source circuit, including the startup sequentially electrically connected
Circuit unit, current generating circuit unit and output voltage reference circuit unit；
The start-up circuit unit, which is used to provide, starts voltage, it is to avoid voltage reference source circuit is operated in nought state area；
The current generating circuit unit is used to produce operating current for output voltage reference circuit unit, while making voltage
The lower power consumption of reference source circuit；
The output voltage reference circuit unit is used to realize that the voltage reference of zero-temperature coefficient and high PSRR is defeated
Go out.
CMOS threshold voltage is varied with temperature and changed, and with negative temperature coefficient, its expression formula is
VTH=VTH(T0)-κ(T-T0) (4)
If CMOS source lining voltage VSB is not zero, it is considered to effect of bulk effect, threshold voltage expression formula is
The current-voltage characteristic of CMOS tube of saturation region and sub-threshold region is operated in respectively as shown in formula (6) (7)
Wherein VT is that thermal voltage (VT=kBT/q) has positive temperature coefficient, and K is the breadth length ratio of CMOS tube, and ID is drain electrode electricity
Stream, μ is carrier mobility, and COX is gate oxide capacitance, and η is the sub-threshold slope factor.
In the present embodiment, the supply voltage of metal-oxide-semiconductor is in super low-power consumption high PSRR voltage reference source circuit
1.8V, whole low-power reference source circuit has only used metal-oxide-semiconductor and electric capacity and resistance is not used, so as to reduce the face of circuit
Product, and circuit is operated in sub-threshold region so as to only produce less power consumption.
As shown in Fig. 2 the start-up circuit unit include NMOS tube MS1, MS2, and PMOS MC, MC drain electrode and source
Extremely it is connected with power supply, MC grid is connected with MS2 grid, it is defeated that MS2 drain electrode and source electrode draw the first enabling signal respectively
Go out end and the second enabling signal output end, enabling signal, MS1 drain electrode and MS2 grid are provided to current generating circuit unit
Connection, MS1 source ground, MS1 grid is connected to voltage reference source output terminal VREF.
MC drain electrode links together with source electrode, plays electric capacity in start-up circuit, so as to reduce circuit structure
Area.
As shown in Fig. 2 the current generating circuit unit includes NMOS tube M1, M2, M3, M4, M11, M12 and PMOS
M13、M14、M15；Described M13, M14 and M15 are connected with current-mirror structure, i.e., M13 grids are connected with drain electrode, M13, M14 and M15
Grid connect and draw generation current output terminal, and be connected with the first enabling signal output end of the start-up circuit unit,
M13, M14 and M15 source electrode connect power supply；M3 and M4 are connected into diode, i.e. M3 and the respective grids of M4 and drain electrode phase respectively
Even, M3 and M4 source ground, the drain electrode connection of M1 source electrode and M3, M1 drain electrode and M14 drain electrode are connected, M2 source electrode and
M4 drain electrode connection, M2 drain electrode and M15 drain electrode are connected, and M2 drain and gate is connected with M1 grid, and with it is described
The second enabling signal output end connection of start-up circuit unit；The drain electrode of M12 grid and M1 is connected, and M12 drain electrode is with M13's
Drain electrode connection, M11 drain electrode and M12 source electrode are connected, and M11 grid is connected to drain electrode, connects into diode, M11 source
Pole is grounded.
The expression formula of electric current is can obtain according to the voltage-current relationship of M1, M2, M3 and M4 tie point, it is long by adjusting its width
Than can just obtain required output current.In addition, M11, M12 and M13 introduce negative-feedback, it is ensured that 2 voltage phases of A and B
Deng reducing mismatch caused by channel length modulation, so that the electric current produced is little with mains voltage variations, improve
A reference source PSRR.
Current generating circuit unit is connected with the start-up circuit unit, to ensure that circuit can normally start, and works as simultaneously
Start-up circuit unit disconnects after circuit normal work, so as to reduce power consumption.
M1, M2 are operated in saturation region, M3, M4, M11, M12, M13, M14, M15 work in described current generating circuit unit
Make in sub-threshold region.
According to M1, M2, M3, M4 annexation, it can obtain
VGS1+VGS3=VGS2+VGS4 (8)
Wushu (5) (6) substitutes into formula (8), can obtain
Wushu (7) substitutes into formula (9) and abbreviation, obtains current expression
M11, M12 and M13 introduce negative-feedback, it is ensured that A and 2 voltages of B are equal, reduce channel length modulation and draw
The mismatch risen, so that the electric current produced improves the PSRR of a reference source little with mains voltage variations.
As shown in Fig. 2 the output voltage reference circuit unit includes PMOS M10, M16, M17, M18 and NMOS tube
M5、M6、M7、M8、M9；Described M16, M17, M18 grid is connected, as the input of output voltage reference circuit unit, with
The generation current output terminal connection of the current generating circuit unit, M16, M17, M18 source electrode connects power supply, M5 drain electrode and grid
The drain electrode connection of pole and M6 grid and M16, M6 drain electrode is connected with M5 source electrode, M6 source ground, M7 source electrode and
M6 drain electrode connection, M7 drain electrode is connected with M17 drain electrode, and M7 grid is connected to reference output；M8 drain electrode connects power supply, M8
Grid and M7 drain electrode connect, M9 drain electrode is connected with M8 source electrode, and M9 grid is connected to the grid of the M4, M10 grid
Pole and M9 drain electrode connection, M9 source electrode and M10 grounded drain, the drain electrode of M10 source electrode and M18 is connected, and is connected to electricity
Press benchmark source output terminal VREF。
All metal-oxide-semiconductors are to be operated in sub-threshold region in the output voltage reference source circuit unit.
According to M5, M6 and M7 annexation, it can obtain
Because M5 and M7 source lining voltage VSB is equal, so V*TH7=V*TH5, wushu (4) (10) substitutes into formula (11), change
Simple
OrderObtain zero-temperature coefficient output condition be
The size of the related metal-oxide-semiconductor of adjustment causes equation to set up, it is possible to achieve the reference voltage output of zero-temperature coefficient.
M8, M9, M10 and M18 introduce negative-feedback so that the output resistance at VREF ends is greatly reduced, and utilize small-signal point
Analysis method, the output resistance that can obtain VREF ends is
Analyzed according to the small-signal model of PSRR, the small-signal resistance from VREF to power supply is bigger, and from
The small-signal resistance on VREF to ground is smaller, then the PSRR of a reference source output is higher, so the introducing of feedback loop is big
The big PSRR for improving a reference source output.
The present invention provides a kind of super low-power consumption high PSRR voltage reference source circuit, including the startup sequentially electrically connected
Circuit unit, current generating circuit unit and output voltage reference circuit unit；The start-up circuit unit is used to provide startup
Voltage, it is to avoid voltage reference source circuit is operated in nought state area；The current generating circuit unit is used to be output voltage benchmark
Circuit unit produces operating current, while making the lower power consumption of voltage reference source circuit；The output voltage reference circuit unit
For realizing that the voltage reference of zero-temperature coefficient and high PSRR is exported.The present invention have super low-power consumption, low-temperature coefficient,
High PSRR, wider operating voltage range and the small advantage of area.
The same or analogous part of same or analogous label correspondence；
Term the being given for example only property explanation of position relationship described in accompanying drawing, it is impossible to be interpreted as the limitation to this patent；
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not pair
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no necessity and possibility to exhaust all the enbodiments.It is all this
Any modifications, equivalent substitutions and improvements made within the spirit and principle of invention etc., should be included in the claims in the present invention
Protection domain within.
Claims (5)
1. a kind of super low-power consumption high PSRR voltage reference source circuit, it is characterised in that including the startup sequentially electrically connected
Circuit unit, current generating circuit unit and output voltage reference circuit unit；
The start-up circuit unit, which is used to provide, starts voltage, it is to avoid voltage reference source circuit is operated in nought state area；
The current generating circuit unit is used to produce operating current for output voltage reference circuit unit, while making voltage reference
The lower power consumption of source circuit；
The output voltage reference circuit unit is used for the voltage reference output for realizing zero-temperature coefficient and high PSRR；
The start-up circuit unit includes NMOS tube MS1, MS2, and PMOS MC, MC drain electrode and source electrode connect with power supply
Connect, MC grid is connected with MS2 grid, MS2 drain electrode and source electrode are drawn the first enabling signal output end and second and opened respectively
Dynamic signal output part, enabling signal is provided to current generating circuit unit, and MS1 drain electrode is connected with MS2 grid, MS1 source
Pole is grounded, and MS1 grid is connected to voltage reference source output terminal VREF；
The current generating circuit unit includes NMOS tube M1, M2, M3, M4, M11, M12 and PMOS M13, M14, M15；It is described
M13, M14 and M15 are connected with current-mirror structure, i.e., M13 grids are connected with drain electrode, and M13, M14 and M15 grid are connected and drawn
Current output terminal is produced, and is connected with the first enabling signal output end of the start-up circuit unit, M13, M14 and M15 source
Pole connects power supply；M3 and M4 are connected into diode, i.e. M3 and are connected with the respective grids of M4 with drain electrode respectively, and M3 and M4 source electrode connect
Ground, the drain electrode connection of M1 source electrode and M3, M1 drain electrode and M14 drain electrode are connected, the drain electrode connection of M2 source electrode and M4, M2's
Drain electrode and M15 drain electrode are connected, and M2 drain and gate is connected with M1 grid, and with the second of the start-up circuit unit
Enabling signal output end is connected；The drain electrode of M12 grid and M1 is connected, and M12 drain electrode and M13 drain electrode are connected, M11 drain electrode
Connected with M12 source electrode, M11 grid is connected to drain electrode, connects into diode, M11 source ground.
2. super low-power consumption high PSRR voltage reference source circuit according to claim 1, it is characterised in that the electricity
M1, M2 in the raw circuit unit of miscarriage are operated in saturation region, and M3, M4, M11, M12, M13, M14, M15 are operated in sub-threshold region.
3. super low-power consumption high PSRR voltage reference source circuit according to claim 1, it is characterised in that described defeated
Going out voltage reference circuit unit includes PMOS M10, M16, M17, M18 and NMOS tube M5, M6, M7, M8, M9；The M16,
M17, M18 grid are connected, as the input of output voltage reference circuit unit, the production with the current generating circuit unit
Raw current output terminal connection, M16, M17, M18 source electrode connects power supply, M5 drain and gate and M6 grid and M16 leakage
Pole is connected, and M6 drain electrode is connected with M5 source electrode, M6 source ground, the drain electrode connection of M7 source electrode and M6, M7 drain electrode and
M17 drain electrode connection, M7 grid is connected to reference output；M8 drain electrode connects power supply, and the drain electrode of M8 grid and M7 is connected, M9
Drain electrode be connected with M8 source electrode, M9 grid is connected to the grid of the M4, and the drain electrode of M10 grid and M9 is connected, M9 source
Pole and M10 grounded drain, the drain electrode of M10 source electrode and M18 are connected, and are connected to voltage reference source output terminal VREF。
4. super low-power consumption high PSRR voltage reference source circuit according to claim 3, it is characterised in that described defeated
It is to be operated in sub-threshold region to go out all metal-oxide-semiconductors in voltage reference source circuit unit.
5. the super low-power consumption high PSRR voltage reference source circuit according to claim any one of 1-4, its feature exists
In the voltage of the power supply is 1.8V.
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| CN107844153B (en) * | 2016-09-21 | 2023-07-28 | 成都锐成芯微科技股份有限公司 | Voltage regulating circuit with high power supply rejection ratio |
| CN108427470A (en) * | 2017-05-09 | 2018-08-21 | 常州爱上学教育科技有限公司 | The reference voltage circuit and its working method with compensation circuit of power module |
| CN106959723B (en) * | 2017-05-18 | 2018-04-13 | 东南大学 | A kind of bandgap voltage reference of wide input range high PSRR |
| CN109308091B (en) * | 2017-07-26 | 2020-07-17 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Voltage reference source circuit |
| CN107450652A (en) * | 2017-08-02 | 2017-12-08 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of voltage reference source circuit |
| CN107562113B (en) * | 2017-08-22 | 2019-04-05 | 电子科技大学 | One kind low line regulation reference circuit neural network based and production method |
| CN107664711B (en) * | 2017-09-01 | 2019-12-13 | 新茂国际科技股份有限公司 | Power failure detector |
| CN108445956A (en) * | 2018-06-07 | 2018-08-24 | 哈尔滨理工大学 | A kind of high PSRR Low Drift Temperature bandgap voltage reference |
| CN108919876B (en) * | 2018-09-29 | 2021-04-13 | 北京兆易创新科技股份有限公司 | Reference source |
| CN109947165A (en) * | 2019-01-31 | 2019-06-28 | 敦泰电子有限公司 | Voltage reference source circuit and low-power dissipation power supply system |
| CN112379717B (en) * | 2020-11-24 | 2022-03-22 | 重庆邮电大学 | Reference circuit of full MOS tube |
| CN112731998A (en) * | 2020-12-01 | 2021-04-30 | 江苏信息职业技术学院 | Voltage reference circuit of ZTC operating point based on MOSFET |
| CN114184832B (en) * | 2021-12-06 | 2023-05-23 | 深圳飞骧科技股份有限公司 | Low-voltage detection circuit |
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| CN100489724C (en) * | 2006-12-28 | 2009-05-20 | 东南大学 | CMOS reference voltage source |
| TW200903213A (en) * | 2007-07-02 | 2009-01-16 | Beyond Innovation Tech Co Ltd | Bias supply, start-up circuit, and start-up method for bias circuit |
| CN103309391B (en) * | 2013-05-24 | 2016-06-29 | 福州大学 | High PSRR, low-power consumption reference current and reference voltage generating circuit |
| CN103513689B (en) * | 2013-10-14 | 2015-08-19 | 中山大学 | A kind of low-power reference source circuit |
| CN104111682B (en) * | 2014-05-05 | 2016-02-03 | 西安电子科技大学 | Low-power consumption, low-temperature coefficient reference source circuit |
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