CN103197722A - Low-static-power current-mode band-gap reference voltage circuit - Google Patents
Low-static-power current-mode band-gap reference voltage circuit Download PDFInfo
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- CN103197722A CN103197722A CN2013101096685A CN201310109668A CN103197722A CN 103197722 A CN103197722 A CN 103197722A CN 2013101096685 A CN2013101096685 A CN 2013101096685A CN 201310109668 A CN201310109668 A CN 201310109668A CN 103197722 A CN103197722 A CN 103197722A
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- resistance
- operational amplifier
- pmos pipe
- reference voltage
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Abstract
A low-static-power current-mode band-gap reference voltage circuit is based on the basis of a traditional band-gap reference voltage circuit which is provided with two PNP audions Q1 and Q2, three PMOS (positive channel metal oxide semiconductor) transistors M1, M2 and M3, an operational amplifier OP and four resistors R1, R2, R3 and R4. The low-static-power current-mode band-gap reference voltage circuit is characterized by subjecting the traditional band-gap reference voltage circuit to improvements which comprise removing R1 and R3 and additionally and respectively arranging two resistors R5 and R6 between the non-inverting input end of the operational amplifier OP and the drain electrode of the PMOS transistor M3 and between the inverting input end of the operational amplifier OP and the drain electrode of the PMOS transistor M3, wherein the resistance value of the R5 is equal to that of R6. Under the conditions of the same power voltage and the same bias currents of the audions Q1 and Q2, the total static power of the low-static-power current-mode band-gap reference voltage circuit is 70% lower than that of the traditional band-gap reference voltage circuit when the output reference voltage is 1 volt.
Description
Technical field
The present invention relates to the bandgap voltage reference circuit, especially a kind of current-mode bandgap voltage reference circuit of low speed paper tape reader static power disspation belongs to bipolar transistor (BJT) and metal-oxide semiconductor (MOS) (MOS) transistor integrated circuit technical field.
Background technology
There is a kind of traditional bandgap voltage reference circuit as shown in Figure 1 in the prior art, comprises PNP triode Q1 and Q2, PMOS pipe M1, M2 and M3, operational amplifier OP, resistance R
1, R
2, R
3, R
4The base stage of Q1 and Q2 and grounded collector, the emitter of Q1 passes through resistance R
2Link to each other with the drain electrode of the in-phase input end of operational amplifier OP and PMOS pipe M1 and be designated as node A, resistance R
1Be connected across between node A and the ground, the emitter of Q2 links to each other with the drain electrode that inverting input and the PMOS of operational amplifier OP manage M2 and is designated as Node B, resistance R
3Be connected across between Node B and the ground, the output terminal of operational amplifier OP is connected with the grid of PMOS pipe M1, M2 and M3, and the drain electrode of PMOS pipe M3 is designated as node C and passes through resistance R
4Ground connection, source electrode and the substrate of PMOS pipe M1, M2 and M3 meet supply voltage VDD, node C output reference voltage V
RefThe principle of work of band-gap reference circuit shown in Figure 1 is as follows:
The PMOS pipe M1 that breadth length ratio is identical, M2 and M3 constitute equal proportion current mirror, i.e. I
1=I
2=I
3The base-emitter voltage of triode Q2 is:
Wherein, V
TBe thermal voltage, be about 26mv, I at normal temperatures
S0For saturation current and its value of triode Q2 is directly proportional with the emitter area of triode.The base-emitter voltage V of triode
BEFor CTAT(and absolute temperature are inversely proportional to) voltage, at normal temperatures, work as V
BEDuring ≈ 750mV,
The base-emitter voltage of triode Q1 is:
Wherein, N is the ratio of triode Q1 and Q2 emitter area, and better for the matching that makes triode Q1 and Q2, the N value gets 8 usually.Computing operational amplifier OP works in degree of depth negative feedback, makes in the same way that the voltage of input end and reverse input end node A and B equates, is to guarantee I
Q1=I
Q2, resistance R
1With R
3Must get identical resistance, then
Because the base-emitter voltage V of triode
BEBe CTAT voltage, flow through resistance R so
1Electric current I
aBe the CTAT electric current.Resistance R
2On pressure drop be:
V again
T=kT/q, k are Boltzmann constants, and q is the electric charge of an electron institute band, V
TTemperature coefficient be:
Wherein, T
0=300K is from following formula thermal voltage V as can be known
TPositive temperature coefficient is arranged, so Δ V
BETemperature coefficient also be on the occasion of, and Δ V
BEPass through resistance R
2Obtaining a PTAT(is directly proportional with absolute temperature) electric current I
Q1, again
Obvious V
RefSize can be by regulating resistance R
1, R
2, R
3And R
4Value adjust traditional current-mode band-gap reference principle that Here it is arbitrarily.
Along with the fast development of Analogous Integrated Electronic Circuits, it is particularly important that Low-power Technology seems, R1 in traditional current-mode band-gap reference, and R3 two resistance have consumed bigger quiescent dissipation because of direct ground connection.For example in formula 7, work as V
BE2≈ 750mV, N=8, the saturation current I of PNP triode Q2
S0During ≈ 1fA, tried to achieve by formula 6
Get I by formula 1
Q1=I
Q2≈ 3.37mA, then
Work as V
RefDuring=1V,
If supply voltage VDD is 1.5V, total power consumption P of so traditional current-mode reference circuit consumption is about:
P=3 * I
3* VDD=40.5mW (formula 11)
Obviously, traditional current-mode band-gap reference can not satisfy the requirement of low speed paper tape reader static power disspation, and in order to solve power problems, prior art mostly is that utilization is operated in subthreshold value and linear zone is realized low-power consumption reference source, but the difficult realization on technology of this benchmark.
Summary of the invention
The problem that has big quiescent dissipation at above-mentioned conventional current mould reference voltage; the invention provides a kind of current-mode bandgap voltage reference circuit of low speed paper tape reader static power disspation; by with operational amplifier in the traditional structure in the same way the resistance reconfiguration of input end and reverse input end ground connection to reference voltage output end; make that each branch current is fully utilized in the circuit; reduce unnecessary quiescent current, reduced the quiescent dissipation of current-mode reference voltage significantly.
The technical scheme that the present invention solves the problems of the technologies described above is as follows:
A kind of current-mode bandgap voltage reference circuit of low speed paper tape reader static power disspation based on traditional bandgap voltage reference circuit, is provided with PNP triode Q1 and Q2, PMOS pipe M1, M2 and M3, operational amplifier OP, resistance R
1, R
2, R
3, R
4The equal ground connection of the base stage of PNP triode Q1 and Q2 and collector, the emitter of PNP triode Q1 passes through resistance R
2Drain electrode, resistance R with the in-phase input end of operational amplifier OP and PMOS pipe M1
1An end connect resistance R
1Other end ground connection, drain electrode, the resistance R of the emitter of PNP triode Q2 and the inverting input of operational amplifier OP and PMOS pipe M2
3An end connect resistance R
3Other end ground connection, the output terminal of operational amplifier OP is connected with the grid of PMOS pipe M1, M2 and M3, and resistance R is passed through in the drain electrode of PMOS pipe M3
4Ground connection, the source electrode of PMOS pipe M1, M2 and M3 all is connected supply voltage VDD with substrate, the drain electrode output reference voltage V of PMOS pipe M3
Ref
It is characterized in that: above-mentioned traditional bandgap voltage reference circuit is improved, remove resistance R
1, R
3, between the drain electrode of the inverting input of the in-phase input end of operational amplifier OP and operational amplifier OP and PMOS pipe M3, set up resistance R respectively
5And R
6Described resistance R
5=R
6
Compared with prior art, the invention has the beneficial effects as follows:
High power problems at conventional current mould reference circuit; the present invention puies forward on the basis that does not increase components and parts quiescent dissipation with conventional current mould reference circuit and has reduced approximately 70%, and the size of output reference voltage can be adjusted by the value of regulating resistance R4 on the reference voltage output branch road.
Description of drawings
Fig. 1 is a kind of current-mode bandgap voltage reference circuit of the prior art;
Fig. 2 is the current-mode bandgap voltage reference circuit of low speed paper tape reader static power disspation of the present invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and feature are described, the example of lifting only is used for explaining the present invention, is not for limiting scope of the present invention.
Referring to Fig. 2, the current-mode bandgap voltage reference circuit of low speed paper tape reader static power disspation of the present invention based on traditional bandgap voltage reference circuit, comprises PNP triode Q1 and Q2, PMOS pipe M1, M2 and M3, operational amplifier OP, resistance R
1, R
2, R
3, R
4The equal ground connection of the base stage of PNP triode Q1 and Q2 and collector, the emitter of PNP triode Q1 passes through resistance R
2Drain electrode, resistance R with the in-phase input end of operational amplifier OP and PMOS pipe M1
1An end connect resistance R
1Other end ground connection, drain electrode, the resistance R of the emitter of PNP triode Q2 and the inverting input of operational amplifier OP and PMOS pipe M2
3An end connect resistance R
3Other end ground connection, the output terminal of operational amplifier OP is connected with the grid of PMOS pipe M1, M2 and M3, and resistance R is passed through in the drain electrode of PMOS pipe M3
4Ground connection, the source electrode of PMOS pipe M1, M2 and M3 all is connected supply voltage VDD with substrate, the drain electrode output reference voltage V of PMOS pipe M3
Ref
It is characterized in that: above-mentioned traditional bandgap voltage reference circuit is improved, remove resistance R
1, R
3, between the drain electrode of the inverting input of the in-phase input end of operational amplifier OP and operational amplifier OP and PMOS pipe M3, set up resistance R respectively
5And R
6Described resistance R
5=R
6
Principle of work of the present invention is:
The PMOS pipe M1 that breadth length ratio is identical, M2 and M3 constitute equal proportion current mirror, i.e. I
1=I
2=I
3Computing operational amplifier OP works in degree of depth negative feedback, makes in the same way that the voltage of input end and reverse input end node A and B equates, is to guarantee I
Q1=I
Q2, resistance R
5With R
6Must get identical resistance, then
Because the base-emitter voltage V of triode
BEBe CTAT voltage, flow through resistance R so
5Electric current I
aWith flow through resistance R
6Electric current I
bBe the CTAT electric current.Δ V
BEPass through resistance R
2Obtain a PTAT electric current I
Q1, again
Flow through resistance R
4Electric current I
4Size be:
So the reference voltage of output is:
Arrangement back V
RefExpression formula be:
Work as V
BE2≈ 750mV gets N=8, V
T=26mV, the time, order
Can obtain the reference voltage V of approximate zero temperature coefficient
RefObvious V
RefSize can be by regulating resistance R
2, R
4, R
5And R
6Value adjust arbitrarily.
Saturation current I as PNP triode Q2
S0During ≈ 1fA, tried to achieve by formula 15
Get I by formula 1
Q1=I
Q2≈ 3.37mA, then
Suppose required reference voltage V
Ref=1V then can ask R by formula 15
4≈ 672.5 Ω, if supply voltage VDD is 1.5V, this moment, current mirror from the electric current that power supply extracts was:
Total quiescent dissipation P of circuitry consumes is so:
P=3 * I
3* VDD=12.375mW (formula 19)
As seen from the above equation, all under the identical condition, total quiescent dissipation that output reference voltage consumes when being 1V has reduced about 70% than traditional structure to the New type of current mould reference circuit that the present invention proposes at supply voltage and PNP triode Q1, Q2 bias current.
Claims (2)
1. the current-mode bandgap voltage reference circuit of a low speed paper tape reader static power disspation based on traditional bandgap voltage reference circuit, is provided with PNP triode Q1 and Q2, PMOS pipe M1, M2 and M3, operational amplifier OP, resistance R
1, R
2, R
3, R
4The equal ground connection of the base stage of PNP triode Q1 and Q2 and collector, the emitter of PNP triode Q1 passes through resistance R
2Drain electrode, resistance R with the in-phase input end of operational amplifier OP and PMOS pipe M1
1An end connect resistance R
1Other end ground connection, drain electrode, the resistance R of the emitter of PNP triode Q2 and the inverting input of operational amplifier OP and PMOS pipe M2
3An end connect resistance R
3Other end ground connection, the output terminal of operational amplifier OP is connected with the grid of PMOS pipe M1, M2 and M3, and resistance R is passed through in the drain electrode of PMOS pipe M3
4Ground connection, the source electrode of PMOS pipe M1, M2 and M3 all is connected supply voltage VDD with substrate, the drain electrode output reference voltage V of PMOS pipe M3
Ref
It is characterized in that: above-mentioned traditional bandgap voltage reference circuit is improved, remove resistance R
1, R
3, between the drain electrode of the inverting input of the in-phase input end of operational amplifier OP and operational amplifier OP and PMOS pipe M3, set up resistance R respectively
5And R
6
2. the current-mode bandgap voltage reference circuit of low speed paper tape reader static power disspation according to claim 1 is characterized in that: resistance R
5=R
6
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CN2013101096685A CN103197722A (en) | 2013-03-29 | 2013-03-29 | Low-static-power current-mode band-gap reference voltage circuit |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104035471A (en) * | 2014-06-27 | 2014-09-10 | 东南大学 | Current mode bandgap reference voltage source with subthreshold current compensation function |
CN104977973A (en) * | 2015-07-08 | 2015-10-14 | 北京兆易创新科技股份有限公司 | Low pressure and low power-consumption band-gap reference circuit |
CN105320202A (en) * | 2015-11-03 | 2016-02-10 | 无锡麟力科技有限公司 | Reference source capable of optionally outputting low voltage |
CN107450647A (en) * | 2017-08-30 | 2017-12-08 | 苏州纳芯微电子股份有限公司 | Utilize the integrated circuit and its method of self-heating calibration bandgap voltage reference temperature drift |
TWI611286B (en) * | 2016-07-05 | 2018-01-11 | 絡達科技股份有限公司 | Bias circuit |
CN111984052A (en) * | 2020-07-28 | 2020-11-24 | 广东美的白色家电技术创新中心有限公司 | Voltage source |
CN112433556A (en) * | 2019-08-26 | 2021-03-02 | 圣邦微电子(北京)股份有限公司 | Improved band-gap reference voltage circuit |
Citations (4)
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US20060043957A1 (en) * | 2004-08-30 | 2006-03-02 | Carvalho Carlos M | Resistance trimming in bandgap reference voltage sources |
CN101183273A (en) * | 2007-12-14 | 2008-05-21 | 清华大学 | Band-gap reference source produce device |
CN101286076A (en) * | 2007-04-10 | 2008-10-15 | 智原科技股份有限公司 | Energy-gap reference circuit |
CN102609029A (en) * | 2011-01-11 | 2012-07-25 | 台湾积体电路制造股份有限公司 | Bandgap reference apparatus and methods |
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2013
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US20060043957A1 (en) * | 2004-08-30 | 2006-03-02 | Carvalho Carlos M | Resistance trimming in bandgap reference voltage sources |
CN101286076A (en) * | 2007-04-10 | 2008-10-15 | 智原科技股份有限公司 | Energy-gap reference circuit |
CN101183273A (en) * | 2007-12-14 | 2008-05-21 | 清华大学 | Band-gap reference source produce device |
CN102609029A (en) * | 2011-01-11 | 2012-07-25 | 台湾积体电路制造股份有限公司 | Bandgap reference apparatus and methods |
Non-Patent Citations (1)
Title |
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104035471A (en) * | 2014-06-27 | 2014-09-10 | 东南大学 | Current mode bandgap reference voltage source with subthreshold current compensation function |
CN104977973A (en) * | 2015-07-08 | 2015-10-14 | 北京兆易创新科技股份有限公司 | Low pressure and low power-consumption band-gap reference circuit |
CN105320202A (en) * | 2015-11-03 | 2016-02-10 | 无锡麟力科技有限公司 | Reference source capable of optionally outputting low voltage |
TWI611286B (en) * | 2016-07-05 | 2018-01-11 | 絡達科技股份有限公司 | Bias circuit |
CN107450647A (en) * | 2017-08-30 | 2017-12-08 | 苏州纳芯微电子股份有限公司 | Utilize the integrated circuit and its method of self-heating calibration bandgap voltage reference temperature drift |
CN107450647B (en) * | 2017-08-30 | 2018-10-30 | 苏州纳芯微电子股份有限公司 | The integrated circuit and its method of bandgap voltage reference temperature drift are calibrated using self-heating |
CN112433556A (en) * | 2019-08-26 | 2021-03-02 | 圣邦微电子(北京)股份有限公司 | Improved band-gap reference voltage circuit |
CN111984052A (en) * | 2020-07-28 | 2020-11-24 | 广东美的白色家电技术创新中心有限公司 | Voltage source |
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Application publication date: 20130710 |