CN103513689B - A kind of low-power reference source circuit - Google Patents
A kind of low-power reference source circuit Download PDFInfo
- Publication number
- CN103513689B CN103513689B CN201310478331.1A CN201310478331A CN103513689B CN 103513689 B CN103513689 B CN 103513689B CN 201310478331 A CN201310478331 A CN 201310478331A CN 103513689 B CN103513689 B CN 103513689B
- Authority
- CN
- China
- Prior art keywords
- circuit unit
- drain electrode
- grid
- low
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000005265 energy consumption Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Abstract
The invention discloses a kind of low-power reference source circuit, comprise and connect start-up circuit unit, current generating circuit unit and output load circuit unit in turn; Start-up circuit unit is used for providing trigger voltage, avoids being operated in zero condition district; Current generating circuit unit is used for producing micro-electric current for output load circuit unit, makes the lower power consumption of low-power reference source circuit simultaneously; Output load circuit unit exports zero-temperature coefficient and low output voltage for realizing.This circuit has the little characteristic of low-power consumption, low-temperature coefficient, wider operating voltage range and area.
Description
Technical field
The present invention relates to a kind of low-power consumption, low-temperature coefficient, compared with wide operating range and the little reference source circuit of area, more specifically, relate to a kind of low-power consumption benchmark primary circuit.
Background technology
Reference source circuit module is widely used in simulation and hybrid circuit, as A/D, D/A converter, and voltage tuning device, voltage table, the testing tool of reometer and biasing circuit.Its reference signal exported is stablized, and with supply voltage, the change of temperature and technique has nothing to do.At SOC(system on chip) in chip, reference source circuit is absolutely necessary a part, and a lot of modules of chip all need reference source to provide stable voltage or electric current, therefore reference source be designed to the key of whole chip design.
Following performance index are mainly considered: temperature coefficient, operating voltage range, Power Supply Rejection Ratio and power consumption during reference source circuit design.The output voltage temperature influence of the lower i.e. reference source circuit of temperature coefficient is less, and voltage is more stable.Larger working range can make reference source circuit more easily reach the output voltage values of target.In order to meet the requirement now to power management chip low-power consumption, reference source circuit design will reduce its working current as far as possible, thus reduces its power consumption, makes battery service life become more permanent.
The current module of two different temperature coefficients is normally utilized to export to the voltage realizing zero-temperature coefficient for traditional reference source circuit.Deviser will design a positive temperature coefficient (PTC) electric current (electric current increases with the increase of temperature) and a negative temperature parameter current (electric current reduces with the minimizing of temperature) then by superimposed for these two current modules, thus reducing temperature to the impact of electric current, the voltage that electric current finally can obtain low-temperature coefficient through resistance exports.
Fig. 1 is a traditional band-gap reference source circuit structure.By the negative feedback that operational amplifier OP is formed, make node voltage VA=VB, thus make the electric current flowing through M1 and M2 equal, i.e. I1=I2=I, voltage drop on resistance R1 equals the base-radio pressure reduction of Q1 and Q2, value represents the magnitude of voltage relevant to temperature variation for VBE=VTlnN, VT, and N is Q1 and Q2 launch site area ratio.In this circuit structure, reference output voltage is the voltage drop sum on the base emitter voltage VBE3 of bipolar transistor Q3 and resistance R2.And reference output voltage is the voltage drop sum on the base emitter voltage VBE3 of bipolar transistor Q3 and resistance R2, so there is the expression formula of VREF as follows:
（1）
Section 2 in formula and PTAT, for compensating the negative temperature coefficient of VBE3.By selecting the ratio of suitable R1 and R2, the temperature coefficient of reference voltage can reach zero under a certain specified temp, and near this value, reference voltage variation with temperature is very little.
But there is certain deficiency in this structure.First, the temperature coefficient that this structure can arrive is higher, and generally between 20-100ppm/ ° of C, secondly, the output voltage of this circuit is about 1.2 volts, is not suitable for the occasion of low pressure.This circuit uses triode and resistance, and the Area comparison of circuit is large.Again, the toggle speed of this circuit is slow, even if the reference voltage of bandgap voltage reference also can not turn off when too high, and can not the self-shield of realizing circuit.And the Power Supply Rejection Ratio of circuit is usually not ideal enough, especially under power supply noise compares rugged environment, reference output voltage can be subject to larger noise.
Summary of the invention
For the problems referred to above, the object of the invention is to the operating characteristic utilizing CMOS tube in sub-threshold region, propose a kind of low in energy consumption, working range is wide, area is little and temperature coefficient is low CMOS low-power reference source circuit.
To achieve these goals, technical scheme of the present invention is:
A kind of low-power reference source circuit, comprises and connects start-up circuit unit, current generating circuit unit and output load circuit unit in turn;
Described start-up circuit unit is used for providing trigger voltage, avoids being operated in zero condition district;
Described current generating circuit unit is used for producing micro-electric current for output load circuit unit, makes the lower power consumption of low-power reference source circuit simultaneously;
Described output load circuit unit exports zero-temperature coefficient and low output voltage for realizing.
Start-up circuit unit when circuit start for reference source circuit and other circuit units provide enabling signal, reference source circuit and other circuit units are broken away from be operated in " degeneracy point ", and start-up circuit can be able to be made after reference source circuit normally works to turn off to realize low-power consumption.
The output mechanism that above-mentioned output load circuit unit is made up of two different door threshold voltage metal-oxide-semiconductors.
Preferably, described start-up circuit unit comprises metal-oxide-semiconductor MS0, MS1, MS2, MS3 and MC; Described MS1 and MS2 with current mirror to connection, the source electrode of MS1 and the source ground of MS2, the drain electrode of MS2 is connected with the drain electrode of MS3, the drain electrode of MS1 is connected with MS0 grid, and the grid of MS0 is connected with the grid of MC, and the drain electrode of MS0 is connected with the grid of MS3, the drain electrode of MC is connected with power supply with the source electrode of MS3, MC drain electrode is connected with source electrode, and the drain electrode of MS0 and the source electrode of MS0 are respectively first, second enabling signal output terminal, provide enabling signal to current generating circuit unit; Described MS3, MC are PMOS.
The drain electrode of MC is connected with power supply, and MC grid, drain electrode and source electrode link together, and plays electric capacity thus decrease the area of circuit structure in start-up circuit.
Preferably, described current generating circuit unit comprises metal-oxide-semiconductor M1, M2, M3, PM1 and PM2, metal-oxide-semiconductor PM1 with PM2 is connected with current-mirror structure makes the electric current of two branch roads equal, the source electrode of PM1 and the source electrode of PM2 connect power supply, the grid of PM1, the grid of PM2 are connected with the drain electrode of PM2, the drain electrode of PM2 is generation current output terminal, and is connected with the first enabling signal output terminal of start-up circuit unit; The grid of M1, the drain electrode of M2 are connected with the source electrode of M3, the drain electrode of PM1, the grid of M3, the drain electrode of M3 are connected with the grid of M2, the grid of M2 is connected with the second enabling signal output terminal of start-up circuit unit, and the source electrode of M1 and the source ground of M2, the drain electrode of M1 is connected with the drain electrode of PM2.Current generating circuit unit employs the MOS of one group of cascade structure, according to the voltage relationship of each MOS, determines to export micro-electric current.Can obtain the expression formula of electric current according to the voltage-current relationship of M1, M2 and M3 tie point, this electric current is relevant with the breadth length ratio of M1, M2 and M3, can just obtain lower output current by regulating its breadth length ratio.
Current generating circuit unit is connected with described start-up circuit unit, to guarantee that circuit can normally start, after circuit normally works, as feedback signal, start-up circuit unit is disconnected simultaneously, thus minimizing power consumption, described start-up circuit unit when circuit start for reference source and chip and other circuit modules provide enabling signal, reference source circuit and other circuit units are broken away from be operated in " degeneracy point ", and start-up circuit can be made after reference source circuit normally works to turn off to realize low-power consumption.
Preferably, described output load circuit unit comprises metal-oxide-semiconductor M4, M5 and PM3, the grid of PM3 is as the input end of output load circuit unit, be connected with the first enabling signal output terminal of start-up circuit unit, the source electrode of PM3 connects power supply, PM2 in PM3 and current generating circuit unit forms current mirror, and the current mirror that current generating circuit unit is produced is to output load circuit unit; The drain electrode of M4, the grid of M4 are connected with the grid of M5, and the source electrode of M4 is connected with the drain electrode of M5, the source ground of M5, and it is output load that M4 and M5 joins level, with the tie point of the drain electrode of the source electrode of M4 and M5 for output node VREF.
Whole low-power reference source circuit only employs metal-oxide-semiconductor and does not use electric capacity and resistance, thus reduce the area of circuit, and circuit working only produces less power consumption in sub-threshold region.
Preferably, the M4 in described output load circuit unit is nmvt3.3 pipe, has lower door threshold voltage, and M5 is n3.3 pipe, and have higher door threshold voltage, the door threshold value of M5 is greater than the door threshold value of M4, and output voltage values is about both differences.Because nmvt3.3 pipe has the door threshold voltage different from other pipes and temperature coefficient, thus realize zero-temperature coefficient.
Preferably, in low-power reference source circuit, the supply voltage of metal-oxide-semiconductor is 3.3V, thus makes low-power reference source circuit obtain wider working range.
Compared with prior art, beneficial effect of the present invention is: the present invention have structure simple, realize the feature that area is little, temperature coefficient is low, low in energy consumption, output voltage is low and working range is wide.
Accompanying drawing explanation
Fig. 1 is traditional reference source circuit connection layout.
Fig. 2 is start-up circuit connection layout of the present invention.
Fig. 3 is output load circuit connection diagram of the present invention.
Fig. 4 is current generating circuit connection layout of the present invention.
Fig. 5 is reference source circuit connection layout of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention will be further described, but embodiments of the present invention are not limited to this.
The present invention be utilize CMOS tube in the operating characteristic of sub-threshold region, devise the reference source circuit that a low-power consumption, low-temperature coefficient and area are little.Realize stable voltage by utilizing the CMOS of different door threshold values to export, the burning voltage realizing low-temperature coefficient exports.Shown in the voltage-current characteristic following expression being operated in the CMOS tube of sub-threshold region:
（2）
Wherein
v tH be a threshold voltage have positive temperature coefficient (PTC) and
v t for thermal voltage (
v t =k b t/q) there is negative temperature coefficient.
kfor the breadth length ratio of CMOS tube,
i d its drain current,
ufor carrier mobility,
c oX for grid oxide layer electric capacity.
As Fig. 5, a kind of low-power reference source circuit, comprises and connects start-up circuit unit 1, current generating circuit unit 2 and output load circuit unit 3 in turn;
Described start-up circuit unit 1, for providing trigger voltage, is avoided being operated in zero condition district, is guaranteed that circuit normally works;
Described current generating circuit unit 2, for producing micro-electric current for output load circuit unit, makes the lower power consumption of low-power reference source circuit simultaneously;
Described output load circuit unit 3 utilizes the CMOS tube nmvt of different door threshold values and realizes exporting zero-temperature coefficient and low output voltage.
In the present embodiment, CMOS tube all in low-power reference source circuit is all that the CMOS tube of 3.3V, 3.3V has wider working range, thus increases the working range of reference source circuit structure.Reference source circuit structure only only used CMOS components and parts, does not use electric capacity, resistance and triode, can reduce its impact of imbalance on circuit, and the circuit that can effectively reduce realize area.
As shown in Figure 2, start-up circuit unit 1 comprises metal-oxide-semiconductor MS0, MS1, MS2, MS3 and MC; Described MS1 and MS2 with current mirror to connection, the source electrode of MS1 and the source ground of MS2, the drain electrode of MS2 is connected with the drain electrode of MS3, the drain electrode of MS1 is connected with MS0 grid, and the grid of MS0 is connected with the grid of MC, and the drain electrode of MS0 is connected with the grid of MS3, the drain electrode of MC is connected with power supply with the source electrode of MS3, MC drain electrode is connected with source electrode, and the drain electrode of MS0 and the source electrode of MS0 are respectively first, second enabling signal output terminal, provide enabling signal to current generating circuit unit; Described MS3, MC are PMOS.The drain electrode of MC is connected with power supply, and MC grid, drain electrode and source electrode link together, and plays electric capacity thus decrease the area of circuit structure in start-up circuit.
As shown in Figure 3, described output load circuit unit comprises metal-oxide-semiconductor M4, M5 and PM3, the grid of PM3 is as the input end of output load circuit unit, be connected with the first enabling signal output terminal of start-up circuit unit, the source electrode of PM3 connects power supply, PM2 in PM3 and current generating circuit unit forms current mirror, and the current mirror that current generating circuit unit is produced is to output load circuit unit; The drain electrode of M4, the grid of M4 are connected with the grid of M5, and the source electrode of M4 is connected with the drain electrode of M5, the source ground of M5, and it is output load that M4 and M5 joins level, with the tie point of the drain electrode of the source electrode of M4 and M5 for output node V
ref.Output voltage is had to express formula as follows:
（3）
Described metal-oxide-semiconductor M4 employs nmvt3.3 and manages (Medium
v tH cMOS), its threshold voltage
v tH4 =487mV, lower than the door threshold voltage of other CMOS (
v tH5 =695mV).Meanwhile, described nmvt3.3 pipe has the temperature coefficient different from n3.3 pipe, and both difference can the temperature coefficient of more effective reduction reference source circuit structure.Be operated in the voltage-current characteristic of sub-threshold region according to metal-oxide-semiconductor, further can obtain the expression formula of output voltage:
（4）
Road is by adjustment M as shown from the above formula
4and M
5breadth length ratio
kthe impact of T on output voltage can be eliminated, thus realize zero-temperature coefficient.
As shown in Figure 4, described current generating circuit unit comprises metal-oxide-semiconductor M1, M2, M3, PM1 and PM2, metal-oxide-semiconductor PM1 with PM2 is connected with current-mirror structure makes the electric current of two branch roads equal, the source electrode of PM1 and the source electrode of PM2 connect power supply, the grid of PM1, the grid of PM2 are connected with the drain electrode of PM2, the drain electrode of PM2 is generation current output terminal, and is connected with the first enabling signal output terminal of start-up circuit unit; The grid of M1, the drain electrode of M2 are connected with the source electrode of M3, the grid of M2 is connected with the second enabling signal output terminal of start-up circuit unit, the source electrode of M1 and the source ground of M2, the drain electrode of M1 is connected with the drain electrode of PM2, the drain electrode of PM1, the grid of M3, the drain electrode of M3 are connected with the grid of M2, obtain the voltage relationship of this tie point as the formula (5):
（5）
Be operated in the voltage-current characteristic of subthreshold value according to CMOS tube, as the formula (2), further can arrive the electric current that circuit produces circuit
i 1 expression formula:
（6）
From above formula, by regulating the breadth length ratio of M1, M2 and M3
ksize, just can obtain small working current.。
Current generating circuit unit is connected with described start-up circuit unit, to guarantee that circuit can normally start, after circuit normally works, as feedback signal, start-up circuit unit is disconnected simultaneously, thus minimizing power consumption, first enabling signal output terminal of start-up circuit unit is connected with described output load circuit unit, metal-oxide-semiconductor PM3 and PM2 forms current mirror, and obtain the electric current I 3 proportional with I1 by this current mirror output load circuit, this ratio is determined by the breadth length ratio of PM2 and PM3.
Above-described embodiments of the present invention, do not form limiting the scope of the present invention.Any amendment done within spiritual principles of the present invention, equivalent replacement and improvement etc., all should be included within claims of the present invention.
Claims (5)
1. a low-power reference source circuit, is characterized in that, comprises and connects start-up circuit unit, current generating circuit unit and output load circuit unit in turn;
Described start-up circuit unit is used for providing trigger voltage, avoids being operated in zero condition district;
Described current generating circuit unit is used for producing micro-electric current for output load circuit unit, makes the lower power consumption of low-power reference source circuit simultaneously;
Described output load circuit unit exports zero-temperature coefficient and low output voltage for realizing;
Described start-up circuit unit comprises metal-oxide-semiconductor MS0, MS1, MS2, MS3 and MC; Described MS1 and MS2 with current mirror to connection, the source electrode of MS1 and the source ground of MS2, the drain electrode of MS2 is connected with the drain electrode of MS3, the drain electrode of MS1 is connected with MS0 grid, and the grid of MS0 is connected with the grid of MC, and the drain electrode of MS0 is connected with the grid of MS3, the drain electrode of MC is connected with power supply with the source electrode of MS3, MC drain electrode is connected with source electrode, and the drain electrode of MS0 and the source electrode of MS0 are respectively first, second enabling signal output terminal, provide enabling signal to current generating circuit unit; Described MS3, MC are PMOS.
2. low-power reference source circuit according to claim 1, it is characterized in that, described current generating circuit unit comprises metal-oxide-semiconductor M1, M2, M3, PM1 and PM2, metal-oxide-semiconductor PM1 with PM2 is connected with current-mirror structure, the source electrode of PM1 and the source electrode of PM2 connect power supply, the grid of PM1, the grid of PM2 are connected with the drain electrode of PM2, and the drain electrode of PM2 is generation current output terminal, and are connected with the first enabling signal output terminal of start-up circuit unit; The grid of M1, the drain electrode of M2 are connected with the source electrode of M3, and the drain electrode of PM1, the grid of M3, the drain electrode of M3 are connected with the grid of M2, and the grid of M2 is connected with the second enabling signal output terminal of start-up circuit unit; The source electrode of M1 and the source ground of M2, the drain electrode of M1 is connected with the drain electrode of PM2.
3. low-power reference source circuit according to claim 1, it is characterized in that, described output load circuit unit comprises metal-oxide-semiconductor M4, M5 and PM3, the grid of PM3 is as the input end of output load circuit unit, be connected with the first enabling signal output terminal of start-up circuit unit, the source electrode of PM3 connects power supply, the drain electrode of M4, the grid of M4 are connected with the grid of M5, the source electrode of M4 is connected with the drain electrode of M5, the source ground of M5, it is output load that M4 and M5 joins level, with the tie point of the drain electrode of the source electrode of M4 and M5 for output node VREF.
4. low-power reference source circuit according to claim 3, is characterized in that, the M4 in described output load circuit unit is nmvt3.3 pipe, and M5 is n3.3 pipe, and the door threshold value of M5 is greater than the door threshold value of M4.
5. low-power reference source circuit according to claim 1, is characterized in that, in low-power reference source circuit, the supply voltage of metal-oxide-semiconductor is 3.3V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310478331.1A CN103513689B (en) | 2013-10-14 | 2013-10-14 | A kind of low-power reference source circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310478331.1A CN103513689B (en) | 2013-10-14 | 2013-10-14 | A kind of low-power reference source circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103513689A CN103513689A (en) | 2014-01-15 |
| CN103513689B true CN103513689B (en) | 2015-08-19 |
Family
ID=49896585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310478331.1A Expired - Fee Related CN103513689B (en) | 2013-10-14 | 2013-10-14 | A kind of low-power reference source circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103513689B (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104656732B (en) * | 2014-12-31 | 2016-05-18 | 格科微电子（上海）有限公司 | Voltage reference circuit |
| CN105676938B (en) * | 2016-03-04 | 2017-07-28 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of super low-power consumption high PSRR voltage reference source circuit |
| CN105739586B (en) * | 2016-04-01 | 2017-09-22 | 深圳还是威健康科技有限公司 | A kind of current reference source circuit |
| CN105974989B (en) * | 2016-06-15 | 2017-10-24 | 中山大学 | A kind of low-power consumption whole CMOS reference source circuit based on subthreshold value |
| CN106484018A (en) * | 2016-09-29 | 2017-03-08 | 广州智慧城市发展研究院 | A kind of reference voltage source circuit system and supply unit |
| CN106855732B (en) * | 2016-12-26 | 2018-03-16 | 中山大学 | A kind of super low-power consumption reference voltage source circuit system |
| CN107450652A (en) * | 2017-08-02 | 2017-12-08 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of voltage reference source circuit |
| CN107272819B (en) * | 2017-08-09 | 2018-07-20 | 电子科技大学 | A kind of low-power consumption Low Drift Temperature CMOS subthreshold value reference circuits |
| CN107291146A (en) * | 2017-08-16 | 2017-10-24 | 何金昌 | A kind of band-gap voltage source and chip system applied to microchip |
| CN108205353B (en) * | 2018-01-09 | 2019-09-27 | 电子科技大学 | A kind of CMOS subthreshold value reference voltage source |
| CN109343652A (en) * | 2018-10-12 | 2019-02-15 | 中国电子科技集团公司第七研究所 | It is a kind of that the reference voltage source of two output voltages is provided |
| CN110377090A (en) * | 2019-07-29 | 2019-10-25 | 北方民族大学 | A kind of reference voltage source circuit |
| CN110794909B (en) * | 2019-11-05 | 2021-06-04 | 安徽大学 | Ultra-low power consumption voltage reference source circuit with adjustable output voltage |
| CN111290459B (en) * | 2020-02-11 | 2021-10-22 | 杭州未名信科科技有限公司 | Voltage reference source circuit |
| CN112416044A (en) * | 2020-12-03 | 2021-02-26 | 电子科技大学 | Voltage reference circuit with high power supply rejection ratio |
| CN117074767B (en) * | 2023-10-18 | 2024-01-30 | 苏州锴威特半导体股份有限公司 | Voltage detection circuit |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8305068B2 (en) * | 2009-11-25 | 2012-11-06 | Freescale Semiconductor, Inc. | Voltage reference circuit |
| CN103309391A (en) * | 2013-05-24 | 2013-09-18 | 福州大学 | Reference current and reference voltage generation circuit with high power-supply rejection ratio and low power consumption |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5242367B2 (en) * | 2008-12-24 | 2013-07-24 | セイコーインスツル株式会社 | Reference voltage circuit |
| JP5323142B2 (en) * | 2010-07-30 | 2013-10-23 | 株式会社半導体理工学研究センター | Reference current source circuit |
| JP5782346B2 (en) * | 2011-09-27 | 2015-09-24 | セイコーインスツル株式会社 | Reference voltage circuit |
-
2013
- 2013-10-14 CN CN201310478331.1A patent/CN103513689B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8305068B2 (en) * | 2009-11-25 | 2012-11-06 | Freescale Semiconductor, Inc. | Voltage reference circuit |
| CN103309391A (en) * | 2013-05-24 | 2013-09-18 | 福州大学 | Reference current and reference voltage generation circuit with high power-supply rejection ratio and low power consumption |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103513689A (en) | 2014-01-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103513689B (en) | A kind of low-power reference source circuit | |
| CN106959723B (en) | A kind of bandgap voltage reference of wide input range high PSRR | |
| CN106527572B (en) | A kind of low-power consumption Low Drift Temperature CMOS subthreshold value reference circuits | |
| CN105974989B (en) | A kind of low-power consumption whole CMOS reference source circuit based on subthreshold value | |
| CN104238611B (en) | Current-mode band gap current reference | |
| CN103309391B (en) | High PSRR, low-power consumption reference current and reference voltage generating circuit | |
| CN104111688B (en) | A kind of BiCMOS with temperature-monitoring function is without amplifier band gap voltage reference source | |
| CN101470459A (en) | Low-voltage low-power consumption CMOS voltage reference circuit | |
| CN107272819A (en) | A kind of low-power consumption Low Drift Temperature CMOS subthreshold value reference circuits | |
| CN104615185B (en) | A kind of reference voltage source start-up circuit | |
| CN107168441B (en) | A kind of band-gap reference circuit based on neural network | |
| CN106774574B (en) | A kind of band-gap reference source circuit | |
| CN103995555B (en) | A kind of positive temperature coefficient (PTC) being applied to super low-power consumption band-gap reference produces circuit | |
| CN109308091A (en) | A kind of voltage reference source circuit | |
| CN101149628B (en) | Reference voltage source circuit | |
| CN108107963A (en) | A kind of programmable bandgap voltage reference of low-temperature coefficient | |
| CN107797601A (en) | A kind of design of the reference voltage source of the full metal-oxide-semiconductor of low-power consumption subthreshold value | |
| CN102117088B (en) | CMOS (Complementary Metal-Oxide-Semiconductor) reference source applicable to protective chip with two lithium batteries | |
| CN107450652A (en) | A kind of voltage reference source circuit | |
| CN103412597B (en) | Current reference circuit | |
| CN104102266A (en) | Reference voltage generating circuit | |
| CN103440011A (en) | Linear constant-current-source circuit having voltage difference compensation | |
| CN109491433A (en) | A kind of reference voltage source circuit structure suitable for imaging sensor | |
| CN103941796B (en) | Band-gap reference circuit | |
| CN104035479B (en) | A kind of voltage-reference of high PSRR low noise |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20151203 Address after: 510275 Xingang West Road, Guangdong, No. 135 Zhongshan University, Patentee after: SUN YAT-SEN University Patentee after: SYSU HUADU INDUSTRIAL SCIENCE AND TECHNOLOGY INSTITUTE Address before: 510275 Xingang West Road, Guangdong, No. 135 Zhongshan University, Patentee before: Sun Yat-sen University Patentee before: Sysung Electronics and Telecomm Research Institute |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150819 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |