CN107797601A - A kind of design of the reference voltage source of the full metal-oxide-semiconductor of low-power consumption subthreshold value - Google Patents
A kind of design of the reference voltage source of the full metal-oxide-semiconductor of low-power consumption subthreshold value Download PDFInfo
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- CN107797601A CN107797601A CN201610804744.8A CN201610804744A CN107797601A CN 107797601 A CN107797601 A CN 107797601A CN 201610804744 A CN201610804744 A CN 201610804744A CN 107797601 A CN107797601 A CN 107797601A
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- circuit
- reference voltage
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- power consumption
- voltage source
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
Abstract
The invention belongs to field of analog integrated circuit, is related to a kind of Low-power-consumptioreference reference voltage source circuit.This circuit includes benchmark core circuit and start-up circuit.A kind of full MOS reference voltage source circuits of low-power consumption are devised by the analysis of the MOS transistor difference current characteristics to being operated in sub-threshold region, linear zone and saturation region.Replace normal conventional resistance to make the characteristic of the full MOS a reference sources of whole circuit realiration by using the MOS transistor for being operated in linear zone, while circuit chip area can be effectively reduced；Start-up circuit is used to provide a starting current to whole circuit when electric power supply is firm, to eliminate degeneracy point.Compared with traditional reference voltage source circuit, circuit of the invention can not only reach low-down power consumption, and have relatively low temperature coefficient.
Description
Technical field
The invention belongs to field of analog integrated circuit, is related to reference voltage generation technology in integrated circuit, more precisely
Say be a kind of full MOS reference voltage sources of low-power consumption subthreshold value design.
Background technology
Reference voltage source is the important module in analog circuit, is usually applied to power management chip, digital analog converter
Deng in circuit, for circuit, other modules provide Voltage Reference.In the research of reference voltage source, research is more how to realize
Low Drift Temperature characteristic, it is less to power consumption research, and band-gap reference is much all based on, but band-gap reference is to supply voltage requirement
It is higher, and the use of conventional resistive causes chip area larger, therefore, it is necessary to which designing one kind has the full metal-oxide-semiconductor of low-power consumption
The reference source circuit of Sub-Threshold Characteristic.
The content of the invention
The main object of the present invention is to provide a kind of new full metal-oxide-semiconductor of low-power consumption subthreshold value suitable for low supply voltage
Reference voltage source circuit, circuit have in the low-temperature coefficient characteristic very in wide temperature range, use the MOS for working in linear zone
Pipe realizes full MOS structure instead of resistance and reduces circuit chip area, and output reference voltage provides partially for linear zone metal-oxide-semiconductor
Voltage is put, avoids designing extra biasing circuit further to reduce power consumption.
The technical scheme is that：A kind of full MOS reference voltage source circuits of low-power consumption subthreshold value,
The circuit includes benchmark core circuit, start-up circuit.
The benchmark core circuit is made up of PMOS M1, M2, M3, M4, M8 and NMOS tube M5, M6, M7, M9；Wherein, M1
Source class meet power vd D, grid connects M2 grid, and drain electrode connects M3 source class；M2 source class meets power vd D, and grid and drain electrode connect
To the source electrode for together, being connected to M4；M3 grid is connected to M4 grid, and drain electrode is connected to M5 drain electrode；M4 grid is connected to drain electrode
Together, it is connected to M6 drain electrode；M5 grid is connected to drain electrode, and source class is connected to ground GND；M6 grid is connected to M5 grid, and source class connects
To M7 drain electrode；M7 grid is connected to M9 grid, and source class is connected to ground GND；M8 source class meets power vd D, and grid connects M2 grid
Pole, drain electrode connect M9 drain electrode；M9 grid meets drain electrode, source class ground connection GND.
The start-up circuit is made up of PMOS M10, M11, M12；M10 source class meets power vd D, and grid is connected to M12's
Source class, drain electrode connect M11 grid；M11 source class and drain electrode are connected to together, are connected to ground GND；M12 grid connects M11 grid,
Grounded drain GND.
Beneficial effects of the present invention can not only reduce power supply power supply and Static Electro to reduce the power consumption of reference voltage source
Stream, and chip layout area can be reduced, while Low Drift Temperature coefficient is kept in whole temperature range.
Brief description of the drawings
Fig. 1 is subthreshold value a reference source basic structure.
Fig. 2 is the complete schematic digram of reference voltage source in the present invention.
Fig. 3 is circuit temperature characteristic Simulation schematic diagram.
Fig. 4 is that circuit static current characteristics emulates schematic diagram.
Embodiment
The embodiment of the present invention is described in detail below in conjunction with the accompanying drawings.
The full MOS reference voltage source circuits of low-power consumption subthreshold value of the present invention, as shown in Fig. 2 the circuit includes benchmark core
Circuit, start-up circuit.
The benchmark core circuit is made up of PMOS M1, M2, M3, M4, M8 and NMOS tube M5, M6, M7, M9；Wherein, M1
Source class meet power vd D, grid connects M2 grid, and drain electrode connects M3 source class；M2 source class meets power vd D, and grid and drain electrode connect
To the source electrode for together, being connected to M4；M3 grid is connected to M4 grid, and drain electrode is connected to M5 drain electrode；M4 grid is connected to drain electrode
Together, it is connected to M6 drain electrode；M5 grid is connected to drain electrode, and source class is connected to ground GND；M6 grid is connected to M5 grid, and source class connects
To M7 drain electrode；M7 grid is connected to M9 grid, and source class is connected to ground GND；M8 source class meets power vd D, and grid connects M2 grid
Pole, drain electrode connect M9 drain electrode；M9 grid meets drain electrode, source class ground connection GND.
The start-up circuit is made up of PMOS M10, M11, M12；M10 source class meets power vd D, and grid is connected to M12's
Source class, drain electrode connect M11 grid；M11 source class and drain electrode are connected to together, are connected to ground GND；M12 grid connects M11 grid,
Grounded drain GND.
The present invention operation principle be：PTAT electricity is produced using the difference Δ VGS of the CMOS tube gate source voltage of sub-threshold region two
I0 is flowed, so as to obtain the reference voltage circuit of zero-temperature coefficient in certain temperature range.
It is as shown in Figure 1 subthreshold value reference voltage source circuit structure, I0For current source, transistor M0 is operated in saturation region,
Saturation region electric current is：
So reference voltage VREFFor：
Section 1 threshold voltage V in formulaTHWith negative temperature characteristic, in order to obtain the reference voltage of zero-temperature coefficient, it is desirable to formula
Middle Section 2 will have positive temperature coefficient.
Benchmark core circuit is as shown in Fig. 2 wherein M1~M4 forms the breadth length ratio phase of common-source common-gate current mirror, M1 and M2
Together, M3, M4 are used to suppress influence of the channel-length modulation to current mirror image current.M5, M6, M7 are used to produce PTAP electricity
Stream, wherein M5, M6 are operated in sub-threshold region, and M7 is operated in deep linear zone and serves as resistance to reduce chip area, and M8 is operated in Asia
Threshold zone, for mirror image M1 and M2 electric current, M9 is operated in saturation region, and M9 gate source voltages are as output reference voltage
M7 grid end provides bias voltage.Because M7 is operated in deep linear zone, M7 drain-source current I7It can be reduced to：
Because M9 is operated in saturation region, M9 drain-source current I9For：
If M8 and M2 breadth length ratio is M, i.e. I9=MI7, because M7, M9 grid end link together, gate source voltage is equal, and
Breadth length ratio is equal, then can obtain：
M5, M6 are operated in sub-threshold region, are obtained by subthreshold region formula：
Therefore, M7 drain-source terminal voltage VDS7For：
Above formula is substituted into I9Formula obtains：
Reference voltage V can be obtained by formula (8)REFFor：
Threshold voltage V in formulaTHWith negative temperature characteristic, VTWith positive temperature characterisitic, therefore, as long as being appropriately arranged with M2, M5 and M6
And M8 width is long, it is possible to obtains the reference voltage of zero-temperature coefficient.
Start-up circuit is as shown in Fig. 2 wherein M11 sources drain terminal and substrate links together and be connected to low side, therefore whole MOS
Pipe is equivalent to electric capacity, and the electric capacity can change with gate voltage.When power supply just starts power up, M11 grid end does not have
There is electric charge, i.e. voltage is zero, therefore M12 gate source voltage is equal to supply voltage, and M12 is in the conduction state, so as to by current mirror
M1, M2 grid end voltage pull-down, M1, M2 conducting, circuit enter normal operating conditions；Meanwhile M10 leakage current gradually increases
And charged to electric capacity M11, M11 grid end voltages also begin to gradually rise.After circuit has been started up starting normal work, M11 grid
Terminal voltage is sufficiently large, and M12 will be not turned on, and into off state, such start-up circuit just disconnects with benchmark core circuit.Start
Circuit does not consume quiescent current in circuit normal work, therefore helps to reduce power consumption.
The present invention analyzes the MOS transistor difference current characteristics for being operated in sub-threshold region, linear zone and saturation region, design
A kind of low-power consumption subthreshold value full metal-oxide-semiconductor reference voltage source circuit.Replaced using the MOS transistor for being operated in linear zone common normal
Resistance is advised, makes the characteristic of the full MOS a reference sources of whole circuit realiration, while effectively reduce circuit chip area, output reference voltage
There is provided for linear zone metal-oxide-semiconductor and be biased to further reduce power consumption, and circuit has in the low temperature system very in wide temperature range
Number characteristic.As shown in figure 3, it is the analogous diagram to this circuit reference voltage source temperature characterisitic, from simulation result it can be seen that -50
Voltage change 4.48mV in the range of~+150 DEG C, temperature coefficient are 22.6 × 10-6/℃.As shown in figure 4, it is to this circuit static
The analogous diagram of current characteristics, it can be seen that whole circuit static electric current is very low, quiescent current is at 25 DEG C
327.3nA, therefore, the total quiescent dissipation of circuit are 0.59 μ W.Therefore, it can be seen that the invention provides a low-power consumption low temperature
The full metal-oxide-semiconductor reference voltage source of subthreshold value of coefficient, the reference voltage source can meet higher to power consumption and chip area requirement
Application scenario.
Claims (2)
1. a kind of design of the full metal-oxide-semiconductor reference voltage source of low-power consumption subthreshold value, it includes benchmark core circuit and start-up circuit,
The benchmark core circuit, for producing reference voltage, it is characterised in that：By to being operated in sub-threshold region, linear zone and satisfying
The analysis of current characteristics different with the MOS transistor in area devises a kind of full MOS reference voltage source circuits of low-power consumption.
2. normal conventional resistance is replaced to make the full MOS benchmark of whole circuit realiration by using the MOS transistor for being operated in linear zone
The characteristic in source, while circuit chip area can be effectively reduced.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610804744.8A CN107797601A (en) | 2016-09-06 | 2016-09-06 | A kind of design of the reference voltage source of the full metal-oxide-semiconductor of low-power consumption subthreshold value |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610804744.8A CN107797601A (en) | 2016-09-06 | 2016-09-06 | A kind of design of the reference voltage source of the full metal-oxide-semiconductor of low-power consumption subthreshold value |
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| CN107797601A true CN107797601A (en) | 2018-03-13 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108445952A (en) * | 2018-05-15 | 2018-08-24 | 徐亚芹 | A kind of non-resistance reference voltage generating circuit applied in passive label |
| CN109375701A (en) * | 2018-09-19 | 2019-02-22 | 安徽矽磊电子科技有限公司 | A kind of reference voltage base source of multiple-channel output |
| CN113093855A (en) * | 2021-03-26 | 2021-07-09 | 华中科技大学 | Low-power-consumption wide-voltage-range ultra-low-voltage reference source circuit |
| CN113434005A (en) * | 2021-07-15 | 2021-09-24 | 苏州瀚宸科技有限公司 | Controllable resistance circuit |
| CN115576383A (en) * | 2022-09-20 | 2023-01-06 | 北京聚思芯半导体技术有限公司 | Band-gap reference circuit and band-gap reference chip |
-
2016
- 2016-09-06 CN CN201610804744.8A patent/CN107797601A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108445952A (en) * | 2018-05-15 | 2018-08-24 | 徐亚芹 | A kind of non-resistance reference voltage generating circuit applied in passive label |
| CN109375701A (en) * | 2018-09-19 | 2019-02-22 | 安徽矽磊电子科技有限公司 | A kind of reference voltage base source of multiple-channel output |
| CN113093855A (en) * | 2021-03-26 | 2021-07-09 | 华中科技大学 | Low-power-consumption wide-voltage-range ultra-low-voltage reference source circuit |
| CN113434005A (en) * | 2021-07-15 | 2021-09-24 | 苏州瀚宸科技有限公司 | Controllable resistance circuit |
| CN115576383A (en) * | 2022-09-20 | 2023-01-06 | 北京聚思芯半导体技术有限公司 | Band-gap reference circuit and band-gap reference chip |
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Application publication date: 20180313 |