CN204808100U - There is not band gap reference circuit that fortune was lowerd and is lowerd consumption - Google Patents
There is not band gap reference circuit that fortune was lowerd and is lowerd consumption Download PDFInfo
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- CN204808100U CN204808100U CN201520489150.3U CN201520489150U CN204808100U CN 204808100 U CN204808100 U CN 204808100U CN 201520489150 U CN201520489150 U CN 201520489150U CN 204808100 U CN204808100 U CN 204808100U
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Abstract
The utility model provides a there is not band gap reference circuit that fortune was lowerd and is lowerd consumption. This circuit includes and wherein, still includes positive temperature coefficient circuit, negative temperature coefficient circuit and output circuit: bias circuit, bias circuit is including biasing PMOS pipe and biasing NMOS pipe, biasing PMOS pipe is parallelly connected with the PMOS pipe among the output circuit, the drain electrode of biasing PMOS pipe with biasing NMOS pipe source electrode links to each other, the collecting electrode of the 0th triode is connected among the grid of biasing NMOS pipe and the positive temperature coefficient circuit, the projecting pole of first triode is connected among the drain electrode of biasing NMOS pipe and the positive temperature coefficient circuit, the collecting electrode and the base of first triode link to each other. Having increased bias circuit, can having guaranteed positive temperature coefficient circuit, triode collector's voltage keeps unanimous, can not make the reference current of circuit change along with mains voltage's change, improved the suppression ability of output voltage to power supply change.
Description
Technical field
The utility model belongs to integrated circuit fields, relates to a kind of band-gap reference circuit without amplifier low-voltage and low-power dissipation.
Background technology
Along with the develop rapidly of system integration technology, reference voltage source has become on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuit) and nearly all digital simulator system.Reference voltage source is the important component part of VLSI (very large scale integrated circuit) and electronic system, can be widely used in precision comparator, A/D and D/A converter, random access memories, flash memory and system integrated chip.Band-gap reference is one most popular in all reference voltages, and its Main Function provides stable reference voltage or reference current in integrated circuits, this just require band-gap reference to the change of supply voltage and the change of temperature insensitive.
As shown in Figure 1, for of the prior art without amplifier band-gap reference voltage circuit.This circuit comprises PTC circuit, negative temperature parameter circuit and output circuit.PTC circuit specifically comprises two NPN triode Q0 and Q1, and resistance R1, and wherein the collector of Q0 is connected with base stage; Negative temperature parameter circuit comprises NPN triode Q2 and resistance R2.Output circuit comprises three PMOS MP2, MP3 and MP4, exports for electric current being converted to voltage.Wherein, the area ratio between the emitter-base stage of triode Q1 and Q0 be N:1, MP2, MP3 and MP4 drain and gate between voltage difference be 2:2:K.
The expression formula of bandgap voltage reference VBG is: VBG=VBE (Q2)+［ Δ VBE/R1 ］ * R2, wherein, VBE (Q2) is for having the base-emitter voltage of the Q2 of negative temperature coefficient, Δ VBE=ln (N) * kT/e is the base-emitter voltage difference of Q0 and Q1, this voltage difference has positive temperature coefficient (PTC), T is temperature, k=1.38 × 10
-23j/K, e=1.6 × 10
-19c.
As can be seen from the expression formula of above-mentioned bandgap voltage reference VBG, expect the VBG wanted, must carry out fine adjustment, and the adjustment of temperature coefficient be more difficult to temperature coefficient, therefore, this circuit is difficult to realize the adjustment to bandgap voltage reference.
Utility model content
The purpose of this utility model proposes a kind of band-gap reference circuit without amplifier low-voltage and low-power dissipation, to solve the problem that bandgap voltage reference is difficult to regulate.
First aspect, the utility model embodiment provides a kind of band-gap reference circuit without amplifier low-voltage and low-power dissipation, comprises PTC circuit, negative temperature parameter circuit and output circuit, wherein, also comprises:
Biasing circuit, described biasing circuit comprises bias PMOS pipe and biased NMOS tube, and described bias PMOS pipe is in parallel with the PMOS in output circuit; The drain electrode of described bias PMOS pipe is connected with described biased NMOS tube source electrode; The grid of described biased NMOS tube is connected with the collector of the 0th triode in PTC circuit, and the drain electrode of described biased NMOS tube is connected with the emitter of the first triode in PTC circuit; The collector of described first triode is connected with base stage.
In foregoing circuit, preferably, also comprise:
First output resistance of series connection and the second output resistance, be connected in parallel on the two ends of described negative temperature parameter circuit, the tie point of described first output resistance and the second output resistance is as voltage output end.
In foregoing circuit, preferably:
First output resistance and/or the second output resistance, its resistance is adjustable.
In foregoing circuit, preferably:
Described negative temperature parameter circuit comprises the second triode and negative temperature resistance.
The technical scheme of the utility model embodiment, improves for low-voltage and low-power dissipation demand to meet chip, requires that higher chip has earth shaking meaning for quiescent dissipation.In this band-gap reference circuit, owing to no longer introducing amplifier, so the problem that offset voltage affects for band gap (bandgap) output voltage also would not be produced.
In order to increase the inhibiting effect of this circuit for supply voltage, add a road biasing circuit, can ensure in PTC circuit, triode Q0 collector (collector) is held with the collector (collector) of Q1 and is consistent, the reference current of circuit will be changed with the change of supply voltage, improve the rejection ability of output voltage for power source change.
In order to obtain the output of wider band gap reference, adding again a road output resistance in addition, can obtain the output of zero temp shift temperature coefficient by adjusting the resistance of output resistance, temperature coefficient does not change with the change of resistance value and output voltage values.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of existing band-gap reference circuit;
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the utility model embodiment;
Fig. 3 is the simulation result schematic diagram of the utility model embodiment.
Embodiment
Below in conjunction with drawings and Examples, the utility model is described in further detail.Be understandable that, specific embodiment described herein only for explaining the utility model, but not to restriction of the present utility model.It also should be noted that, for convenience of description, illustrate only the part relevant to the utility model in accompanying drawing but not entire infrastructure.
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the utility model embodiment, this comprises PTC circuit, negative temperature parameter circuit and output circuit without the band-gap reference circuit of amplifier low-voltage and low-power dissipation.
Concrete, PTC circuit specifically comprises two NPN triodes, i.e. the 0th triode Q0 and the first triode Q1, and positive temperature and resistance R1.Q0 and Q1 is that mirror image is arranged, and the base stage of Q0 and Q1 is interconnected, and emitter is interconnected, and collector is connected with output circuit respectively.Wherein, the area ratio between the emitter-base stage of Q1 and Q0 is N:1.
Negative temperature parameter circuit comprises a NPN triode, i.e. the second triode Q2 and negative temperature resistance R2.The emitter of Q2 is connected with R2, and the collector of Q2 is connected with grid, and is connected with output circuit.
Output circuit comprises three PMOS MP2, MP3 and MP4, exports for electric current being converted to voltage.MP2, MP3 and MP4 are in parallel, and namely MP2, MP3 are connected with the grid of MP4, and source electrode is connected, and drain electrode connects the collector of triode Q0, Q1 and Q2 in PTC circuit and negative temperature parameter circuit respectively.Wherein, the voltage difference between the drain and gate of MP2, MP3 and MP4 is 2:2:K.
In the present embodiment, also comprise further: biasing circuit.Described biasing circuit comprises bias PMOS pipe MP1 and biased NMOS tube MN1, MP1 are in parallel with each PMOS in output circuit, and namely grid is connected, and source electrode is connected, and drain electrode is finally connected to PTC circuit; The drain electrode of MP1 is connected with MN1 source electrode; The grid of MN1 is connected with the collector of Q0 in PTC circuit, and the drain electrode of MN1 is connected with the emitter of Q1 in PTC circuit; The collector of Q1 is connected with base stage.
The technical scheme of the utility model embodiment is in order to increase the inhibiting effect of this circuit for supply voltage, add the biasing circuit that road MP1 and MN1 forms, can ensure that Q0 collector (collector) is consistent with the collector (collector) of Q1, the reference current of circuit will be changed with the change of supply voltage.Improve the rejection ability of output voltage for power source change.
In foregoing circuit, be preferably also provided with the first output resistance R3 and the second output resistance Rout of series connection, be connected in parallel on the two ends of described negative temperature parameter circuit, the tie point of R3 and Rout is as voltage VBG output terminal.Specifically, described negative temperature parameter circuit comprises Q2 and R2.Then R3 and Rout is connected in parallel on the two ends of Q2 and R2, and the collector of R3 and Q2 is connected.
First output resistance and/or the second output resistance, its resistance is preferably adjustable, can adjust the scope of output voltage.
The technical scheme of the utility model embodiment, improves for low-voltage and low-power dissipation demand to meet chip, requires that higher chip has earth shaking meaning for quiescent dissipation.In this band-gap reference circuit, owing to no longer introducing amplifier, so the problem that offset voltage affects for band gap (bandgap) output voltage also would not be produced.In order to obtain the output of wider band gap reference, add again the resistance that a road R3 and Rout forms in addition, can obtain the output of zero temp shift temperature coefficient by adjusting the value of Rout, temperature coefficient does not change with the change of resistance value and output voltage values.
The expression formula of the output voltage VBG of foregoing circuit structure is:
VBG＝[Vbe(q2)+R2*Vt*ln(n)/R1]*(Rout/R1)
Wherein, the emitter junction voltage that Vbe (q2) is Q2, Vt=KT/q, q are electron charge (1.6*10E-19 coulomb), and K is Boltzmann constant, and T is temperature, and n is the triode quantity N of Q1.
Can find out according to this expression formula, output voltage VBG can be changed by the size adjusting Rout, and its temperature characterisitic does not change with the change of resistance Rout.Introduce the branch of two resistance composition in core circuit output voltage part, achieve output voltage adjustable when keep temperature coefficient constant.
As shown in Figure 3, in Fig. 3, transverse axis represents supply voltage VCC, and its variation range is from 1.5V-4.0V, and the longitudinal axis represents the variation range of output voltage.Output voltage VBG change curve after lines representative above adopts the utility model embodiment to emulate, the output voltage Vout change curve after lines representative below adopts prior art to emulate.From simulation result, supply voltage VCC changes in the scope of 1.5V-4V, and the value of output voltage VBG brings up to 5.5mV by the variation range of existing 28mV; The value of output voltage VBG can not change their temperature characterisitic with the change of adjustment (trimming) position.
Note, above are only preferred embodiment of the present utility model and institute's application technology principle.Skilled person in the art will appreciate that the utility model is not limited to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and protection domain of the present utility model can not be departed from.Therefore, although be described in further detail the utility model by above embodiment, but the utility model is not limited only to above embodiment, when not departing from the utility model design, can also comprise other Equivalent embodiments more, and scope of the present utility model is determined by appended right.
Claims (4)
1., without a band-gap reference circuit for amplifier low-voltage and low-power dissipation, comprise PTC circuit, negative temperature parameter circuit and output circuit, it is characterized in that, also comprise:
Biasing circuit, described biasing circuit comprises bias PMOS pipe and biased NMOS tube, and described bias PMOS pipe is in parallel with the PMOS in output circuit; The drain electrode of described bias PMOS pipe is connected with described biased NMOS tube source electrode; The grid of described biased NMOS tube is connected with the collector of the 0th triode in PTC circuit, and the drain electrode of described biased NMOS tube is connected with the emitter of the first triode in PTC circuit; The collector of described first triode is connected with base stage.
2. circuit according to claim 1, is characterized in that, also comprises:
First output resistance of series connection and the second output resistance, be connected in parallel on the two ends of described negative temperature parameter circuit, the tie point of described first output resistance and the second output resistance is as voltage output end.
3. circuit according to claim 2, is characterized in that:
First output resistance and/or the second output resistance, its resistance is adjustable.
4. circuit according to claim 3, is characterized in that:
Described negative temperature parameter circuit comprises the second triode and negative temperature resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520489150.3U CN204808100U (en) | 2015-07-08 | 2015-07-08 | There is not band gap reference circuit that fortune was lowerd and is lowerd consumption |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520489150.3U CN204808100U (en) | 2015-07-08 | 2015-07-08 | There is not band gap reference circuit that fortune was lowerd and is lowerd consumption |
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| Publication Number | Publication Date |
|---|---|
| CN204808100U true CN204808100U (en) | 2015-11-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520489150.3U Active CN204808100U (en) | 2015-07-08 | 2015-07-08 | There is not band gap reference circuit that fortune was lowerd and is lowerd consumption |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104977971A (en) * | 2015-07-08 | 2015-10-14 | 北京兆易创新科技股份有限公司 | Free-operational amplifier low power-consumption band-gap reference circuit |
| CN107992146A (en) * | 2017-12-07 | 2018-05-04 | 中国电子科技集团公司第五十八研究所 | One kind is without amplifier band-gap reference circuit |
| CN110347203A (en) * | 2019-06-19 | 2019-10-18 | 成都华微电子科技有限公司 | The band-gap reference circuit of broadband low-power consumption |
| CN111312301A (en) * | 2018-12-12 | 2020-06-19 | 北京兆易创新科技股份有限公司 | Circuit for controlling bias current |
| CN111427406A (en) * | 2019-01-10 | 2020-07-17 | 中芯国际集成电路制造(上海)有限公司 | Band gap reference circuit |
| CN112882527A (en) * | 2021-01-25 | 2021-06-01 | 合肥艾创微电子科技有限公司 | Constant current generation circuit for optical coupling isolation amplifier and current precision adjustment method |
-
2015
- 2015-07-08 CN CN201520489150.3U patent/CN204808100U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104977971A (en) * | 2015-07-08 | 2015-10-14 | 北京兆易创新科技股份有限公司 | Free-operational amplifier low power-consumption band-gap reference circuit |
| CN107992146A (en) * | 2017-12-07 | 2018-05-04 | 中国电子科技集团公司第五十八研究所 | One kind is without amplifier band-gap reference circuit |
| CN111312301A (en) * | 2018-12-12 | 2020-06-19 | 北京兆易创新科技股份有限公司 | Circuit for controlling bias current |
| CN111312301B (en) * | 2018-12-12 | 2022-02-11 | 北京兆易创新科技股份有限公司 | Circuit for controlling bias current |
| CN111427406A (en) * | 2019-01-10 | 2020-07-17 | 中芯国际集成电路制造(上海)有限公司 | Band gap reference circuit |
| CN110347203A (en) * | 2019-06-19 | 2019-10-18 | 成都华微电子科技有限公司 | The band-gap reference circuit of broadband low-power consumption |
| CN112882527A (en) * | 2021-01-25 | 2021-06-01 | 合肥艾创微电子科技有限公司 | Constant current generation circuit for optical coupling isolation amplifier and current precision adjustment method |
| CN112882527B (en) * | 2021-01-25 | 2022-10-21 | 合肥艾创微电子科技有限公司 | Constant current generation circuit for optical coupling isolation amplifier and current precision adjustment method |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |