CN208873065U - A kind of band-gap reference circuit - Google Patents
A kind of band-gap reference circuit Download PDFInfo
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- CN208873065U CN208873065U CN201821450005.4U CN201821450005U CN208873065U CN 208873065 U CN208873065 U CN 208873065U CN 201821450005 U CN201821450005 U CN 201821450005U CN 208873065 U CN208873065 U CN 208873065U
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Abstract
The utility model discloses a kind of band-gap reference circuits, it include: the Bandgap Reference Voltage Generation Circuit of start-up circuit, biasing circuit and high-order compensation, wherein, the Bandgap Reference Voltage Generation Circuit of the high-order compensation, the compensation method of the circuit is to carry out curvature correction using the subthreshold current of CMOS transistor, obtains high-order temperature compensated band gap reference voltage source circuit.The advantages of this circuit, is to realize by way of not increasing circuit complexity, can increase substantially the precision of band gap reference, and reduce power consumption, reduce chip area, save the cost.
Description
Technical field
The utility model relates to field of circuit technology, more particularly to a kind of band-gap reference circuit.
Background technique
In the prior art, band-gap reference circuit is basic circuit module indispensable in Analogous Integrated Electronic Circuits.It is extensively
For in LED drive circuit, switching power converters, digital analog converter, analog-digital converter and linear voltage regulator.
Fig. 1 is traditional bandgap voltage reference, and working principle is the voltage using two with opposite temperature coefficients
Summation is to balance: having negative temperature coefficient VBEAnd have positive temperature coefficient thermal voltage VT.Thermal voltage is provided by kT/q；Wherein k is
Boltzmann constant, T are temperature, and q is electron charge.The amplifier of high-gain keeps amplifier input terminal voltage identical, on resistance R1
Electric current I=Δ VEB/R1=VT*ln(n)/R1, outputting reference voltage VrefFor；
The negative temperature coefficient of VEB be it is non-linear, about -2mV/ degrees Celsius.The positive temperature coefficient of VT is about that+0.085mV/ takes the photograph
The band-gap reference electricity of the zero-temperature coefficient at a certain temperature can be obtained by choosing suitable R1 and R2 resistance proportion in family name's degree
Pressure.
Fig. 2 is the temperature voltage curve graph of traditional bandgap benchmark.Dotted line VTFor thermal voltage, dotted line VEBFor triode voltage,
Solid line VrefFor the reference voltage of the single order temperature coefficient after weighting.Usually with 20ppm/ DEG C to 100ppm/ DEG C or so of temperature
Drift.
In order to improve the precision of band-gap reference, there has been proposed the high-order temperature compensated of a variety of pairs of band-gap references.But it is common
High-order temperature compensated scheme have the following problems: 1) compensation circuit is excessively complicated, increases process mismatch risk, increases mould
The power consumption of block；2) specific technique is needed, when using common process, this module cannot be manufactured.
By retrieval, Chinese patent application, application number 201711057698.0, is disclosed publication date on March 30th, 2018
A kind of metal-oxide-semiconductor realizes the high-order temperature compensation bandgap reference circuit of diode, including single order band-gap reference circuit, high-temperature area temperature
Rate of writing music compensation circuit, low-temperature region temperature section compensation circuit and start-up circuit.The invention uses source electrode, drain electrode and grid
The drain electrode of the PMOS tube of short circuit and substrate respectively constitute the forward end and backward end of diode, short using source electrode, drain electrode and grid
The leakage of the PMOS tube connect-underlayer voltage generates negative temperature coefficient voltage VCTATAnd two source electrodes, drain electrode and grid are shorted
Leakage-underlayer voltage difference of PMOS tube generates positive temperature coefficient voltage VPTAT, negative temperature coefficient voltage VCTATWith positive temperature coefficient electricity
Press VPTATIt is weighted to obtain single order bandgap voltage reference, by high-temperature area temperature curvature offset voltage VNL1And low-temperature region
Temperature section offset voltage VNL2It is introduced into single order band-gap reference circuit, obtains the bandgap voltage reference of low-temperature coefficient, to obtain
Obtained a kind of high-order temperature compensation bandgap reference circuit of metal-oxide-semiconductor realization diode.But this circuit is to realize one by metal-oxide-semiconductor
Rank bandgap voltage reference is realized high-order temperature compensated using complicated circuit.The present invention be by traditional audion come
Band-gap reference is generated, high-order compensation is realized using the subthreshold current of NMOS tube, it is excessively complicated, increase process mismatch wind
Danger, increases that the power consumption of module, at high cost, fraction defective is high.
Utility model content
1. technical problems to be solved
It is excessively complicated for compensation circuit existing in the prior art, process mismatch risk is increased, module is increased
Power consumption；Some need specific techniques, and when using common process, the problem of cannot manufacturing module, the utility model is provided
A kind of band-gap reference circuit, the raising band gap reference precision of simple and effective may be implemented in it, and circuit structure is simple, not will increase
Requirement of the power consumption or raising of module to supply voltage.
2. technical solution
The purpose of this utility model is achieved through the following technical solutions.
It is a kind of to include: to high-order temperature compensated band-gap reference circuit using subthreshold current
The Bandgap Reference Voltage Generation Circuit of high-order compensation, using the subthreshold current pair for the NMOS tube that gate-source is shorted
The temperature coefficient of reference power supply voltage carries out high-order compensation；
Biasing circuit, for the Bandgap Reference Voltage Generation Circuit of the high-order compensation OP amplifier provide bias current and
Pull-down current is provided for start-up circuit；
Start-up circuit, for providing starting current for the Bandgap Reference Voltage Generation Circuit of the high-order compensation.
Further, the Bandgap Reference Voltage Generation Circuit of high-order compensation include traditional band-gap reference generation circuit and
2 NMOS tubes MN1 and MN2.
Further, traditional band-gap reference generation circuit includes resistance: R1, R2 and R3；PNP pipe: Q1 with
Q2；PMOS tube: MP1 and MP2；NMOS tube: MN1 and MN2；Amplifier: OP；
Wherein the grid of source electrode the connection VDD, MP1 and MP2 of MP1 and MP2 and amplifier OP output are connected, the drain electrode of MP1
It is connected with the first end of R3, the drain electrode of MP2 and output VrefAnd the first end of R2 is connected；The second end connection OP amplifier of R3
The drain electrode of the first end of first end, the drain terminal of MN1 and R1, the second end of R2 and the emitter of Q2 and MN2 is connected；R1's
Second end is connected with the emitter of Q1；The source electrode of Q1 and Q2 base stage, collector and MN1 and MN2 with VSS are connected.
Further, the biasing circuit, including PMOS tube: MP3；NMOS tube: MN3；MP3 grid and high-order compensation
Bandgap Reference Voltage Generation Circuit in MP1 and MP2 grid and start-up circuit MN5 drain electrode be connected, the source electrode of MP3 with
VDD is connected, and the drain electrode of MP3 and the grid of the drain and gate of MN3 and the MN4 in start-up circuit are connected；The source electrode of MN3 with
VSS it is connected.
Further, MP1 and MP2 shape in the Bandgap Reference Voltage Generation Circuit of MP3 and high-order compensation in biasing circuit
At current mirror, the MN4 in MN3 and start-up circuit forms current mirror；
Further, the start-up circuit includes PMOS tube: MP4 and MP5；NMOS tube: MN4 and MN5；
The source electrode of MP4 is connected with VDD, and the drain electrode of MP4 is connected with the source electrode of MP5；The ground the grid of MP4 and MP5 and VSS phase
Even；The drain electrode of MP5 is connected with the drain electrode of the grid of MN5 and MN4, grid, the Yi Jigao of MP3 in the drain electrode of MN5 and biasing circuit 2
MP1 is connected with the grid of MP2 in the Bandgap Reference Voltage Generation Circuit of rank compensation, and the source electrode of MN5 with VSS is connected；The grid of MN4
Pole is connected with the grid of MN3 in biasing circuit and drain electrode and the drain electrode of MP3, and the source electrode of MN4 with VSS is connected.
Further, for the start-up circuit when power vd D is powered on, start-up circuit makes the band gap base of high-order compensation
Quasi- voltage generation circuit is detached from " zero " and annexs point, so that reference voltage is entered normal operating conditions, after benchmark is established, by start-up circuit
Shutdown.
Further, the MP4 and MP5 of start-up circuit provide low current on startup, so that MN5 is opened, so that high-order
The Bandgap Reference Voltage Generation Circuit of compensation is detached from " zero " and annexs point, and after benchmark is established, MN4 is opened, and MN5 is turned off.
A kind of high-order temperature compensated method of band-gap reference circuit, its step are as follows:
Using a kind of above-mentioned band-gap reference circuit, when start-up circuit starts, supply voltage VDD rises, MP4 and MP5 branch
The grid that low current flows to MN5 is generated, MN5 drags down the grid of MP1 and MP2 after opening, and makes Bandgap Reference Voltage Generation Circuit
It is detached from " zero " degeneracy point, under the collective effect of amplifier OP clamper, node a is equal with the voltage of b and is equal to VBE2；
Adjusting means size, so that MP1 is equal with MP2, R2 is equal with R3, and MN1 is equal with MN2；I1 size of current can be obtained
Equal to the electric current for flowing through resistance R1: I=Δ VEB/R1。
The subthreshold current for flowing through MN2 is I2, and as the temperature rises, the size of I2 can change to Naan by pico-ampere, obtain
That arrives has high-order temperature compensated bandgap voltage reference are as follows:
3. beneficial effect
Compared with the prior art, utility model has the advantages that
The utility model is a kind of compensation circuit of the raising band gap reference precision of simple and effective, the compensation side of the circuit
Method is to carry out curvature correction using the subthreshold current of CMOS transistor, and temperature coefficient is up to 6ppm/ DEG C.Circuit structure letter
It is single, it not will increase the power consumption of module or improve the requirement to supply voltage, and can be realized in any CMOS technology.It can lead to
It crosses and does not increase the mode of circuit complexity and realize；The precision of band gap reference can be increased substantially；And power consumption is reduced, reduce chip
Area, save the cost.
Detailed description of the invention
Fig. 1 is a kind of currently used schematic diagram of bandgap voltage reference.
Fig. 2 is the schematic diagram of bandgap voltage reference single order temperature compensation principle.
The current temperature trend schematic diagram for the subthreshold current that the gate-source that Fig. 3 is NMOS is shorted.
Fig. 4 is the schematic diagram of high-order temperature compensated principle in the present invention.
Fig. 5 is a kind of signal using subthreshold current to high-order temperature compensated band-gap reference circuit provided by the invention
Figure.
Description of symbols:
1, the Bandgap Reference Voltage Generation Circuit of high-order compensation；2, biasing circuit；3, start-up circuit.
Specific embodiment
With reference to the accompanying drawings of the specification and specific embodiment, the utility model is described in detail.
Embodiment 1
It elaborates with reference to the accompanying drawing to the present invention.
Since band-gap reference variation with temperature is influenced by several non-ideal effects: the temperature coefficient of resistance, clamper
The gain of amplifier, parasite current, channel length modulation and VBETemperature coefficient it is non-linear.In these factors, VBETemperature coefficient
It is non-linear be its main cause.VBEVary with temperature formula are as follows:
Wherein, Vg0It is the base emitter voltage of the triode when temperature is, TRFor room temperature, η is one related with technique normal
Number, temperature independent, size is the index that 3~3.5, α is collector current temperature T.
Section 2 is the function of first order of temperature on the right of equation in formula (3), can be with positive temperature coefficient thermal voltage VT
It offsets, but Section 3 V on the right of equationT* ln (T) is the higher order term of temperature, to obtain a high-precision band-gap reference just
It must be carried out high-order temperature compensated.
Technology proposed by the present invention uses the subthreshold current of grid-source voltage (VGS) null NMOS transistor
Carry out compensation temperature coefficient.For working in the long channel device of weak inversion regime, drain electrode-when dram-source voltage is higher than 0.1V
Source current IDSIt is given by:
Wherein m is slope factor, and u is mobility, COXFor grid oxygen capacitor, S is (W/L), VTHFor metal-oxide-semiconductor threshold voltage.It can
To calculate, IDSTemperature coefficient be similar to index, as shown in Figure 3.When the temperature coefficient of subthreshold current is similar to index,
It can be used to the higher order term of compensation band gap benchmark.
Referring to Figure 5, the present invention is specific a kind of electric to high-order temperature compensated band-gap reference using subthreshold current
Road, comprising: Bandgap Reference Voltage Generation Circuit 1, biasing circuit 2 and the start-up circuit 3 of high-order compensation.
The Bandgap Reference Voltage Generation Circuit 1 of the high-order compensation includes resistance: R1, R2 and R3；PNP pipe: Q1 and Q2；
PMOS tube: MP1 and MP2；NMOS tube: MN1 and MN2；Amplifier: OP；Resistance R1, R2 and R3, PNP pipe Q1 and Q2, amplifier OP and
PMOS tube MP1 and MP2 constitute traditional band-gap reference generation circuit；NMOS tube MN1 and MN2 provides high-order temperature compensated
Subthreshold current.
The source electrode of the MP1 and MP2 of the Bandgap Reference Voltage Generation Circuit 1 of the high-order compensation connect VDD, MP1 and MP2
Grid and amplifier OP output be connected, the drain electrode of MP1 is connected with the first end of R3, the drain electrode of MP2 with export VrefAnd R2
First end be connected；First end, the drain terminal of MN1 and the first end of R1 of the second end connection OP amplifier of R3, the second end of R2
Drain electrode with the emitter and MN2 of Q2 is connected；The second end of R1 is connected with the emitter of Q1；Q1 and Q2 base stage, collector,
And the source electrode of MN1 and MN2 with VSS is connected.
Wherein, the biasing circuit 2 provides the bias voltage of trombone slide MN4 under start-up circuit, the band gap base of high-order compensation
The bias voltage of amplifier in quasi- voltage generation circuit.
The biasing circuit 2 includes PMOS tube: MP3；NMOS tube: MN3；In MP3 and Bandgap Reference Voltage Generation Circuit
MP1 and MP2 forms current mirror, and the MN4 in MN3 and start-up circuit forms current mirror.
MP1 and MP2 in the MP3 grid of the biasing circuit 2 and the Bandgap Reference Voltage Generation Circuit of high-order compensation
The drain electrode of grid and start-up circuit MN5 are connected, and the source electrode of MP3 is connected with VDD, the drain electrode of MP3 and the drain and gate of MN3,
And the grid of the MN4 in start-up circuit 3 is connected；The source electrode of MN3 with VSS is connected.
Wherein, the Bandgap Reference Voltage Generation Circuit 1 of the high-order compensation combines Δ VEBLinear positive temperature characterisitic,
VBEThe positive humidity index characteristic of subthreshold current that is connected with NMOS gate-source of non-linear negative temperature characteristic, construct a height
The compensation circuit of rank temperature characterisitic.
Wherein, when the start-up circuit 3 is powered on for power vd D, start-up circuit helps reference voltage generating circuit de-
Point is annexed from " zero ", normal operating conditions is made it into and turns off start-up circuit after benchmark is established.
The start-up circuit 3 includes PMOS tube: MP4 and MP5；NMOS tube: MN4 and MN5, MP4 are mentioned on startup with MP5
For low current, circuit is helped to be detached from " zero " merger point so that MN5 is opened, after benchmark is established, MN4 is opened, and MN5 is turned off.
Side of the present invention using subthreshold current to high-order temperature compensated band-gap reference circuit is described below with reference to Fig. 5
Method.
According to Fig. 5, when starting, supply voltage VDD rises, MP4 and MP5 branch generates the low current flow direction of Naan magnitude
The grid of MN5, MN5 drag down the grid of MP1 and MP2 after opening, and Bandgap Reference Voltage Generation Circuit is made to be detached from " zero " degeneracy point,
Under the collective effect of amplifier OP clamper, node a is equal with the voltage of b and is equal to VBE2, value is about 0.7V.
Adjusting means size, so that MP1 is equal with MP2, R2 is equal with R3, and MN1 is equal with MN2；I1 size of current can be obtained
Equal to the electric current for flowing through resistance R1: I=Δ VEB/R1。
The subthreshold current for flowing through MN2 is I2, and as the temperature rises, the size of I2 can change to Naan by pico-ampere.?
That arrives has high-order temperature compensated bandgap voltage reference are as follows:
Fig. 4 be high-order compensation principle of the present invention schematic diagram, first pass through by the value of resistance R2 turn down 5% to 10% it
It is interior, make the zero point of its temperature curve is past to move left, dotted line " single order V in figurerefCentral point is moved to the left ", then use subthreshold current
The positive temperature voltage I2*R2 of resistance is multiplied by carry out high-order compensation, temperature coefficient is up to 6ppm/ DEG C.
Above said content is only presently preferred embodiments of the present invention, the implementation model that should not be considered as limiting the invention
It encloses；Any changes and modifications in accordance with the scope of the present application should still belong to patent covering scope of the invention
Within.
Schematically the invention and embodiments thereof are described above, description is not limiting, not
In the case where spirit or essential characteristics of the invention, the present invention can be realized in other specific forms.Institute in attached drawing
What is shown is also one of the embodiment of the invention, and actual structure is not limited to this, any attached in claim
Icon note should not limit the claims involved.So not departed from if those of ordinary skill in the art are inspired by it
In the case where this creation objective, frame mode similar with the technical solution and embodiment are not inventively designed, it should all
Belong to the protection scope of this patent.In addition, one word of " comprising " is not excluded for other elements or step, "one" word before the component
It is not excluded for including " multiple " element.The multiple element stated in claim to a product can also by an element by software or
Person hardware is realized.The first, the second equal words are used to indicate names, and are not indicated any particular order.
Claims (8)
1. a kind of band-gap reference circuit characterized by comprising
The Bandgap Reference Voltage Generation Circuit (1) of high-order compensation, the subthreshold current for the NMOS tube being shorted using gate-source is to base
The temperature coefficient of quasi- supply voltage carries out high-order compensation；
Biasing circuit (2), for the Bandgap Reference Voltage Generation Circuit (1) of the high-order compensation OP amplifier provide bias current with
And pull-down current is provided for start-up circuit (3)；
Start-up circuit (3) provides starting current for the Bandgap Reference Voltage Generation Circuit (1) for the high-order compensation.
2. a kind of band-gap reference circuit according to claim 1, which is characterized in that the bandgap voltage reference of high-order compensation produces
Raw circuit (1) includes traditional band-gap reference generation circuit and 2 NMOS tubes MN1 and MN2.
3. a kind of band-gap reference circuit according to claim 2, which is characterized in that traditional band-gap reference generates
Circuit includes resistance: R1, R2 and R3；PNP pipe: Q1 and Q2；PMOS tube: MP1 and MP2；NMOS tube: MN1 and MN2；Amplifier: OP；
Wherein the grid of source electrode the connection VDD, MP1 and MP2 of MP1 and MP2 and amplifier OP output are connected, the drain electrode of MP1 and R3
First end be connected, the drain electrode of MP2 and output VrefAnd the first end of R2 is connected；The first of the second end connection OP amplifier of R3
It holds, the first end of the drain terminal of MN1 and R1, the drain electrode of the second end of R2 and the emitter of Q2 and MN2 are connected；The second of R1
End is connected with the emitter of Q1；The source electrode of Q1 and Q2 base stage, collector and MN1 and MN2 with VSS are connected.
4. a kind of band-gap reference circuit according to claim 1, which is characterized in that the biasing circuit (2), including
PMOS tube: MP3；NMOS tube: MN3；MP1 and MP2 in the Bandgap Reference Voltage Generation Circuit (1) of MP3 grid and high-order compensation
The drain electrode of grid and start-up circuit (3) MN5 are connected, and the source electrode of MP3 is connected with VDD, drain electrode and grid of the drain electrode of MP3 with MN3
The grid of pole and the MN4 in start-up circuit (3) are connected；The source electrode of MN3 with VSS is connected.
5. a kind of band-gap reference circuit according to claim 4, which is characterized in that MP3 and high-order are mended in biasing circuit (2)
MP1 and MP2 forms current mirror in the Bandgap Reference Voltage Generation Circuit (1) repaid, and the MN4 in MN3 and start-up circuit (3) forms electricity
Flow mirror.
6. a kind of band-gap reference circuit according to claim 1, which is characterized in that the start-up circuit (3) includes
PMOS tube: MP4 and MP5；NMOS tube: MN4 and MN5；
The source electrode of MP4 is connected with VDD, and the drain electrode of MP4 is connected with the source electrode of MP5；MP4 with VSS is connected with the grid of MP5；MP5
Drain electrode be connected with the drain electrode of the grid of MN5 and MN4, the grid and high-order compensation of MP3 in the drain electrode of MN5 and biasing circuit 2
Bandgap Reference Voltage Generation Circuit (1) in MP1 be connected with the grid of MP2, the source electrode of MN5 with VSS is connected；The grid of MN4
It is connected with the grid of MN3 in biasing circuit (2) and drain electrode and the drain electrode of MP3, the source electrode of MN4 with VSS is connected.
7. a kind of band-gap reference circuit according to claim 6, which is characterized in that the start-up circuit (3) is in power supply
When VDD is powered on, start-up circuit (3) makes the Bandgap Reference Voltage Generation Circuit (1) of high-order compensation be detached from " zero " merger point, makes base
Quasi- voltage enters normal operating conditions and turns off start-up circuit after benchmark is established.
8. a kind of band-gap reference circuit according to claim 6, which is characterized in that the MP4 and MP5 of start-up circuit (3) exist
Low current is provided when starting, so that MN5 is opened, so that Bandgap Reference Voltage Generation Circuit (1) disengaging " zero " of high-order compensation is simultaneous
And point, after benchmark is established, MN4 is opened, and MN5 is turned off.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113655841A (en) * | 2021-08-18 | 2021-11-16 | 西安电子科技大学重庆集成电路创新研究院 | Band gap reference voltage circuit |
| CN115390613A (en) * | 2022-10-28 | 2022-11-25 | 成都市安比科技有限公司 | Band gap reference voltage source |
-
2018
- 2018-09-05 CN CN201821450005.4U patent/CN208873065U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113655841A (en) * | 2021-08-18 | 2021-11-16 | 西安电子科技大学重庆集成电路创新研究院 | Band gap reference voltage circuit |
| CN115390613A (en) * | 2022-10-28 | 2022-11-25 | 成都市安比科技有限公司 | Band gap reference voltage source |
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