CN206292654U - A kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source - Google Patents
A kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source Download PDFInfo
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Abstract
The utility model discloses a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source, it is characterized in that, including start-up circuit, IPTATaReference current source circuit, IPTATbReference current source circuit and temperature-compensation circuit；Start-up circuit is connected to IPTATaReference current source circuit and IPTATbReference current source circuit, and provide electric current when reference voltage source is opened so that reference voltage source breaks away from degeneracy bias point；IPTATaReference current source circuit and IPTATbReference current source circuit produces a bias current for temperature-compensation circuit provides current offset respectively；Temperature-compensation circuit is poor with different multiples respectively by 2 bias currents, obtains a temperature independent reference current, and metal-oxide-semiconductor obtains an output voltage not influenceed by supply voltage and temperature change in actuation temperature compensation circuit.The utility model has that low in energy consumption, chip area is small, device is matched with standard CMOS process, temperature coefficient is low and the characteristics of supply-voltage rejection ratio high.
Description
Technical field
The utility model is related to technical field of integrated circuits, and in particular to a kind of low-voltage nanowatt magnitude whole CMOS current-mode
Formula reference voltage source.
Background technology
Reference voltage source is an indispensable module in Analogous Integrated Electronic Circuits and hydrid integrated circuit, and widely should
In the circuit systems such as analog-digital converter (ADC), digital analog converter (DAC), dc-dc and power amplifier, use
To produce the DC voltage not influenceed by supply voltage and temperature change.Traditional benchmark voltage source is made due to needing big electric current
It is larger into power consumption, and need to use resistance, diode or BJT transistors to produce PTAT voltage in the design process, institute
Big chip area is needed with the device.In order to be able to make the remaining circuit of energy-conservation application device compatible, reference voltage source will make
With standard CMOS process, and avoid using the device beyond metal-oxide-semiconductor.However, CMOS reference voltage source circuits are due to using saturation
The CMOS and resistance in area so that power consumption is excessive, and chip area is big.Recently the non-resistance for being proposed is based on the benchmark electricity of sub-threshold region
Potential source, although power consumption is very low, but its temperature drift, line-voltage regulation and PSRR parameter are poor.
Utility model content
Technical problem to be solved in the utility model is that existing reference voltage source has that power consumption is big, chip area big, device
Part is mismatched with standard CMOS process, temperature coefficient is high and the low problem of supply-voltage rejection ratio, there is provided a kind of low-voltage nanowatt
Magnitude whole CMOS current-mode reference voltage source.
To solve the above problems, the utility model is achieved through the following technical solutions：
A kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source, it is characterized in that, including start-up circuit, IPTATa
Reference current source circuit, IPTATbReference current source circuit and temperature-compensation circuit；Start-up circuit is connected to IPTATaReference current source
Circuit and IPTATbReference current source circuit, and provide electric current when reference voltage source is opened so that reference voltage source breaks away from degeneracy
Bias point, into normal operating conditions；IPTATaReference current source circuit produces a bias current IPa, it is temperature-compensation circuit
Current offset is provided；IPTATbReference current source circuit produces a bias current IPb, for temperature-compensation circuit, to provide electric current inclined
Put；Temperature-compensation circuit is by IPTATaReference current source circuit and IPTATbBeing directly proportional to temperature produced by reference current source circuit
Bias current IPaAnd IPbRespectively with k1And k2Multiple it is poor, obtain a temperature independent reference current IREF, and drive
Metal-oxide-semiconductor obtains an output voltage not influenceed by supply voltage and temperature change in temperature-compensation circuit.
In such scheme, start-up circuit is made up of metal-oxide-semiconductor M1-M5 and electric capacity C1；The source electrode of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2 connects
Power vd D；The top crown of the grid of metal-oxide-semiconductor M1-M5, the drain electrode of metal-oxide-semiconductor M2, and electric capacity C1 is connected；Metal-oxide-semiconductor M1 and metal-oxide-semiconductor
The drain electrode of M5 is connected, and is connected to the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4；The startup that the drain electrode of metal-oxide-semiconductor M3 forms start-up circuit is defeated
Go out and hold set_Ipa, and be connected to IPTATaReference current source circuit；The drain electrode of metal-oxide-semiconductor M4 forms the startup output end of start-up circuit
Set_Ipb, and it is connected to IPTATbReference current source circuit；The source electrode of metal-oxide-semiconductor M5 and the bottom crown of electric capacity C1 are connected to ground GND.
In such scheme, IPTATaReference current source circuit is made up of metal-oxide-semiconductor M27-M45；The source electrode of metal-oxide-semiconductor M27-M30 connects
It is connected to power vd D；The drain electrode of the grid connection metal-oxide-semiconductor M28 of metal-oxide-semiconductor M27-M30 and the source electrode of metal-oxide-semiconductor M32, and form IPTATaBase
The bias current output end Ipa1 of quasi- current source circuit, and connect the grid of the metal-oxide-semiconductor M18 of temperature-compensation circuit；Metal-oxide-semiconductor M27
Drain electrode be connected with the source electrode of metal-oxide-semiconductor M31；The drain electrode of metal-oxide-semiconductor M29 is connected with the source electrode of metal-oxide-semiconductor M33；The drain electrode of metal-oxide-semiconductor M30
Source electrode with metal-oxide-semiconductor M34 is connected；The drain electrode of grid connection metal-oxide-semiconductor M32, M36 of metal-oxide-semiconductor M31-M34, and form IPTATaBenchmark
The bias current output end Ipa2 of current source circuit, and it is connected to the grid of the metal-oxide-semiconductor M21 of temperature-compensation circuit；Metal-oxide-semiconductor M35-
The grid of M38 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M31, M35, and forms IPTATaThe startup input of reference current source circuit
Set_Ipa, is connected to start-up circuit；The drain electrode of metal-oxide-semiconductor M33, M37 is connected；The drain electrode of metal-oxide-semiconductor M34, M38 is connected；Metal-oxide-semiconductor M39,
The grid of M43, M45 is connected, and is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M39 of metal-oxide-semiconductor M35；The source electrode phase of metal-oxide-semiconductor M39-M40
Connect, and be connected to the drain electrode of metal-oxide-semiconductor M43；The source electrode of metal-oxide-semiconductor M36 is connected with the drain electrode of metal-oxide-semiconductor M40；The grid of metal-oxide-semiconductor M40-M41
Extremely it is connected, and is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M41 of metal-oxide-semiconductor M37；The source electrode of metal-oxide-semiconductor M41-M42 is connected, and is connected to
The drain electrode of metal-oxide-semiconductor M44；The grid of metal-oxide-semiconductor M42, M44 is connected, and is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M42 of metal-oxide-semiconductor M38；
The source electrode of metal-oxide-semiconductor M43-M44 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M45；The source electrode of metal-oxide-semiconductor M45 is connected to ground GND.
In such scheme, IPTATbReference current source circuit is made up of metal-oxide-semiconductor M6-M17；The source electrode of metal-oxide-semiconductor M6-M8 is connected to
Power vd D；The grid of metal-oxide-semiconductor M6-M8 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M6 and the source electrode of metal-oxide-semiconductor M9；The leakage of metal-oxide-semiconductor M7
Pole is connected with the source electrode of metal-oxide-semiconductor M10；The drain electrode of metal-oxide-semiconductor M8 is connected with the source electrode of metal-oxide-semiconductor M11；The grid phase of metal-oxide-semiconductor M9-M11
Connect, and be connected to the drain electrode of metal-oxide-semiconductor M9, M12；The grid of metal-oxide-semiconductor M12-M13 is connected, and is connected to the leakage of metal-oxide-semiconductor M10, M13
Pole, forms IPTATbReference current source circuit starts input set_Ipb, is connected to start-up circuit；The source electrode and metal-oxide-semiconductor of metal-oxide-semiconductor M12
The drain electrode of M14 is connected；The grid of metal-oxide-semiconductor M14-M15 is connected, and is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M15 of metal-oxide-semiconductor M13；
The source electrode of metal-oxide-semiconductor M14 is connected with the drain electrode of metal-oxide-semiconductor M16；The drain electrode of grid connection metal-oxide-semiconductor M11, M17 of metal-oxide-semiconductor M16-M17,
And form IPTATbThe bias current output end Ipb1 of reference current source circuit, and it is connected to temperature-compensation circuit；Metal-oxide-semiconductor M15-M17
Source electrode be connected to ground GND.
In such scheme, temperature-compensation circuit is made up of metal-oxide-semiconductor M18-M26 and electric capacity C2；The source electrode of metal-oxide-semiconductor M18-M20
It is connected to power vd D；The grid of metal-oxide-semiconductor M18 forms the bias current inputs Ipa1 of temperature-compensation circuit, and is connected to IPTATaBase
Quasi- current source circuit；The drain electrode of metal-oxide-semiconductor M18 is connected with the source electrode of metal-oxide-semiconductor M21；The grid of metal-oxide-semiconductor M19-M20 is connected, and connects
Drain electrode and the source electrode of metal-oxide-semiconductor M22 to metal-oxide-semiconductor M19；The drain electrode of metal-oxide-semiconductor M20 is connected with the source electrode of metal-oxide-semiconductor M23；Metal-oxide-semiconductor M21
Grid form the bias current inputs Ipa2 of temperature-compensation circuit, and be connected to IPTATaReference current source circuit；Metal-oxide-semiconductor M22-
The grid of M23 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M21, M22, M26；The grid of metal-oxide-semiconductor M24-M25 is connected, and is connected to
The drain electrode of metal-oxide-semiconductor M23-M24；The source electrode of metal-oxide-semiconductor M24 is connected with the drain electrode of metal-oxide-semiconductor M25, and is connected to the top crown of electric capacity C2,
It is the output end of whole reference voltage source as temperature-compensation circuit；The grid of metal-oxide-semiconductor M26 forms bias current inputs
Ipb1, and it is connected to IPTATbReference current source circuit；The source electrode of metal-oxide-semiconductor M25-M26 and the bottom crown of electric capacity C2 are connected to ground GND.
In such scheme, metal-oxide-semiconductor M24 is that normal voltage is the metal-oxide-semiconductor of 1.8V, and metal-oxide-semiconductor M25 is that normal voltage is 3.3V's
Metal-oxide-semiconductor.
Compared with prior art, the utility model has following features：
1st, it is low in energy consumption, only nanowatt magnitude；
2nd, due to passive resistance, BJT or diode is not used, thus chip area is substantially reduced, reduces production
Cost；
3rd, the reference voltage of output has high PSRR and low-voltage regulation, better performances；
4th, temperature-compensating is realized using current subtraction technology, and reduces quiescent current.
Brief description of the drawings
Fig. 1 is the circuit diagram of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source of the present utility model.
Fig. 2 is the core circuit principle of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source of the present utility model
Figure.
Specific embodiment
With reference to the accompanying drawings and examples, the technical solution of the utility model is described in detail：
A kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source, as shown in figure 1, including start-up circuit,
IPTATaReference current source circuit, IPTATbReference current source circuit and temperature-compensation circuit.
Start-up circuit is connected to IPTATaReference current source circuit and IPTATbReference current source circuit, and in reference voltage source
Electric current is provided during unlatching so that reference voltage source breaks away from degeneracy bias point, into normal operating conditions.In the utility model,
Start-up circuit is made up of metal-oxide-semiconductor M1-M5 and electric capacity C1.The source electrode of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2 meets power vd D.Metal-oxide-semiconductor M1-M5's
Grid, the drain electrode of metal-oxide-semiconductor M2 is connected with the top crown of electric capacity C1.Metal-oxide-semiconductor M1 is connected with the drain electrode of metal-oxide-semiconductor M5, and is connected to MOS
The source electrode of pipe M3 and metal-oxide-semiconductor M4.The drain electrode of metal-oxide-semiconductor M3 forms the startup output end set_Ipa of start-up circuit, and is connected to IPTATa
The grid and metal-oxide-semiconductor M31 of the metal-oxide-semiconductor M35-M38 of reference current source circuit, the drain electrode of metal-oxide-semiconductor M35.The drain electrode of metal-oxide-semiconductor M4 is formed
The startup output end set_Ipb of start-up circuit, and it is connected to IPTATbThe grid of the metal-oxide-semiconductor M12-M13 of reference current source circuit and
The drain electrode of metal-oxide-semiconductor M10, M13.The source electrode of metal-oxide-semiconductor M5 and the bottom crown of electric capacity C1 are connected to ground GND.In power supply electrifying, give
Metal-oxide-semiconductor M35 and metal-oxide-semiconductor M13 provides grid bias, makes circuit normal work.
IPTATaReference current source circuit, produces a bias current IPa；Meanwhile, using source electrode coupled differential to replacing passing
Resistance and Bipolar transistors employed in system reference voltage source, improve the PSRR of reference voltage source, are that temperature is mended
Repay circuit and current offset is provided.In the utility model, IPTATaReference current source circuit is made up of metal-oxide-semiconductor M27-M45.Metal-oxide-semiconductor
The source electrode of M27-M30 is connected to power vd D.The drain electrode of the grid connection metal-oxide-semiconductor M28 of metal-oxide-semiconductor M27-M30 and the source of metal-oxide-semiconductor M32
Pole, and form IPTATaThe bias current output end Ipa1 of reference current source circuit, and connect the metal-oxide-semiconductor M18 of temperature-compensation circuit
Grid.The drain electrode of metal-oxide-semiconductor M27 is connected with the source electrode of metal-oxide-semiconductor M31.The drain electrode of metal-oxide-semiconductor M29 is connected with the source electrode of metal-oxide-semiconductor M33.
The drain electrode of metal-oxide-semiconductor M30 is connected with the source electrode of metal-oxide-semiconductor M34.The drain electrode of grid connection metal-oxide-semiconductor M32, M36 of metal-oxide-semiconductor M31-M34,
And form IPTATaThe bias current output end Ipa2 of reference current source circuit, and it is connected to the grid of the metal-oxide-semiconductor M21 of temperature-compensation circuit
Pole.The grid of metal-oxide-semiconductor M35-M38 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M31, M35 and the leakage of the metal-oxide-semiconductor M3 of start-up circuit
Pole.The drain electrode of metal-oxide-semiconductor M33, M37 is connected.The drain electrode of metal-oxide-semiconductor M34, M38 is connected.The grid of metal-oxide-semiconductor M39, M43, M45 is connected,
And it is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M39 of metal-oxide-semiconductor M35.The source electrode of metal-oxide-semiconductor M39-M40 is connected, and is connected to metal-oxide-semiconductor
The drain electrode of M43.The source electrode of metal-oxide-semiconductor M36 is connected with the drain electrode of metal-oxide-semiconductor M40.The grid of metal-oxide-semiconductor M40-M41 is connected, and is connected to
The drain electrode of the source electrode and metal-oxide-semiconductor M41 of metal-oxide-semiconductor M37.The source electrode of metal-oxide-semiconductor M41-M42 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M44.
The grid of metal-oxide-semiconductor M42, M44 is connected, and is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M42 of metal-oxide-semiconductor M38.Metal-oxide-semiconductor M43-M44's
Source electrode is connected, and is connected to the drain electrode of metal-oxide-semiconductor M45.The source electrode of metal-oxide-semiconductor M45 is connected to ground GND.
IPTATbReference current source circuit, based on Oguey current sources, it is a current source for automatic biasing, using a work
Make the passive resistance in the metal-oxide-semiconductor M16 of linear zone replaces traditional bandgap structure, produce a bias current IPb；Meanwhile, use
Common-source common-gate current mirror, suppresses power supply noise, for temperature-compensation circuit provides current offset.In the utility model, IPTATbBase
Quasi- current source circuit is made up of metal-oxide-semiconductor M6-M17.The source electrode of metal-oxide-semiconductor M6-M8 is connected to power vd D.The grid of metal-oxide-semiconductor M6-M8
It is connected, and is connected to the drain electrode of metal-oxide-semiconductor M6 and the source electrode of metal-oxide-semiconductor M9.The drain electrode of metal-oxide-semiconductor M7 is connected with the source electrode of metal-oxide-semiconductor M10.
The drain electrode of metal-oxide-semiconductor M8 is connected with the source electrode of metal-oxide-semiconductor M11.The grid of metal-oxide-semiconductor M9-M11 is connected, and is connected to metal-oxide-semiconductor M9, M12
Drain electrode.The grid of metal-oxide-semiconductor M12-M13 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M10, M13 and the leakage of the metal-oxide-semiconductor M4 of start-up circuit
Pole.The source electrode of metal-oxide-semiconductor M12 is connected with the drain electrode of metal-oxide-semiconductor M14.The grid of metal-oxide-semiconductor M14-M15 is connected, and is connected to metal-oxide-semiconductor M13
Source electrode and metal-oxide-semiconductor M15 drain electrode.The source electrode of metal-oxide-semiconductor M14 is connected with the drain electrode of metal-oxide-semiconductor M16.The grid of metal-oxide-semiconductor M16-M17
The drain electrode of connection metal-oxide-semiconductor M11, M17, and form IPTATbThe bias current output end Ipb1 of reference current source circuit, and it is connected to temperature
Spend the grid of the metal-oxide-semiconductor M26 of compensation circuit.The source electrode of metal-oxide-semiconductor M15-M17 is connected to ground GND.
Temperature-compensation circuit, using PMOS common-source common-gate current mirror, by IPTATaReference current source circuit and IPTATbBenchmark
The bias current I being directly proportional to temperature produced by current source circuitPaAnd IPbRespectively with k1And k2Multiple is poor, obtain one with
The unrelated reference current I of temperatureREF, and metal-oxide-semiconductor M24 and metal-oxide-semiconductor M25 in actuation temperature compensation circuit obtains one by electricity
Source voltage and the output voltage of temperature change influence.Using common-source common-gate current mirror, suppress power supply noise.It is poor using electric current,
Temperature-compensating can not only be realized, moreover it is possible to significantly reduce power consumption.In the utility model, temperature-compensation circuit is by metal-oxide-semiconductor
M18-M26 and electric capacity C2 is constituted.The source electrode of metal-oxide-semiconductor M18-M20 is connected to power vd D.The grid of metal-oxide-semiconductor M18 forms temperature and mends
The bias current inputs Ipa1 of circuit is repaid, and is connected to IPTATaGrid, the metal-oxide-semiconductor of the metal-oxide-semiconductor M27-M30 of reference current source circuit
The drain electrode of M28 and the source electrode of metal-oxide-semiconductor M32.The drain electrode of metal-oxide-semiconductor M18 is connected with the source electrode of metal-oxide-semiconductor M21.The grid of metal-oxide-semiconductor M19-M20
Extremely it is connected, and is connected to the drain electrode of metal-oxide-semiconductor M19 and the source electrode of metal-oxide-semiconductor M22.The drain electrode of metal-oxide-semiconductor M20 and the source electrode of metal-oxide-semiconductor M23
It is connected.The grid of metal-oxide-semiconductor M21 forms the bias current inputs Ipa2 of temperature-compensation circuit, and is connected to IPTATaReference current source
The drain electrode of the grid and metal-oxide-semiconductor M32, M36 of the metal-oxide-semiconductor M31-M34 of circuit.The grid of metal-oxide-semiconductor M22-M23 is connected, and is connected to
The drain electrode of metal-oxide-semiconductor M21, M22, M26.The grid of metal-oxide-semiconductor M24-M25 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M23-M24.MOS
The source electrode of pipe M24 is connected with the drain electrode of metal-oxide-semiconductor M25, and is connected to the top crown of electric capacity C2, used as reference voltage output end.MOS
The grid of pipe M26 forms bias current inputs Ipb1, and is connected to IPTATbThe grid of the metal-oxide-semiconductor M16-M17 of reference current source circuit
Pole and the drain electrode of metal-oxide-semiconductor M11, M17.The source electrode of metal-oxide-semiconductor M25-M26 and the bottom crown of electric capacity C2 are connected to ground GND.
Referring to Fig. 2, core circuit module of the present utility model includes IPTATaReference current source circuit, IPTATbReference current
Source circuit and temperature-compensation circuit.2 reference current source circuits produce the I being directly proportional to temperature respectivelyPaAnd IPb, and respectively
With k1And k2Multiple is poor, obtains temperature independent reference current, and be supplied to temperature-compensation circuit.
IPTATaThe metal-oxide-semiconductor M39-M42 of reference current source circuit is operated in sub-threshold region, and metal-oxide-semiconductor M43-M44 is operated in saturation
Area.
Drain current when metal-oxide-semiconductor is operated in saturation region can be expressed as：
In formula, u (=u0(T0/T)m) be metal-oxide-semiconductor electron mobility；T0It is reference temperature；T is absolute temperature；u0It is ginseng
Examine temperature T0Under electron mobility；M is humidity index；COXIt is gate oxide capacitance；K=W/L is the breadth length ratio of metal-oxide-semiconductor；VGS
It is the gate source voltage of metal-oxide-semiconductor；VTHIt is the threshold voltage of metal-oxide-semiconductor.
Then the gate source voltage difference of metal-oxide-semiconductor M43 and metal-oxide-semiconductor M44 can be expressed as：
Drain current when metal-oxide-semiconductor is operated in sub-threshold region is：
In formula,VT(=kBT/q) it is thermal voltage；kBIt is Boltzmann constant；Q is electronics electricity
Lotus；η is sub-threshold region slope factor.△VpAlso referred to as：
By (2) and (4), IpaIt is represented by：
Wherein
Work as VT0It is in room temperature T0When VTValue, formula (5) is represented by with the relation of temperature：
Because m is a temperature coefficient related to technique, for common metal-oxide-semiconductor, its value is about 1.5, so IpaHave
Positive temperature coefficient.
IPTATbThe metal-oxide-semiconductor M16 of reference current source circuit is operated in linear zone, and metal-oxide-semiconductor M17 is operated in saturation region, metal-oxide-semiconductor
M6-M15 is operated in sub-threshold region.
Reference current IPbBy the gate source voltage V of metal-oxide-semiconductor M16GS16With drain-source voltage VDS16Produce.Increase MOS in circuit
Pipe M17, for metal-oxide-semiconductor M16 provides bias voltage.
The leakage current of metal-oxide-semiconductor M16 is：
The drain-source voltage of metal-oxide-semiconductor M16 is：
The leakage current of metal-oxide-semiconductor M17 is：
In addition
In formula, k2Represent the leakage current ratio of metal-oxide-semiconductor M17 and metal-oxide-semiconductor M16.
By (8), (9), (10) and (11) can draw the I that reference current source is producedPbFor：
Wherein,
Then formula (12) is represented by with the relational expression of temperature：
Therefore, IPbWith positive temperature coefficient.
The metal-oxide-semiconductor M24-M25 of temperature-compensation circuit is operated in sub-threshold region, and metal-oxide-semiconductor M24 is that normal voltage is 1.8V's
Metal-oxide-semiconductor, metal-oxide-semiconductor M25 is that normal voltage is the metal-oxide-semiconductor of 3.3V.Electric current using two identical temperatures coefficient is poor, obtains one
Temperature independent reference current IREF, for the metal-oxide-semiconductor M24 and metal-oxide-semiconductor M25 in temperature-compensation circuit provide reference current IREF。
Two difference I of positive temperature coefficient electric current are obtained using current mirrorREF, reference current IREFExpression formula be：
IREF=k2IPb-k1IPa (15)
Formula (15) is represented by with the relational expression of temperature：
By (7), (14) and (16) are as can be seen that by adjusting k1、k2, metal-oxide-semiconductor M39-M44 and metal-oxide-semiconductor M14-M17 width
The ratio of ratio long, can obtain temperature independent reference current.
Reference voltage VREFDifference can be made by gate source voltages metal-oxide-semiconductor M24 different with metal-oxide-semiconductor M25 to obtain, according to metal-oxide-semiconductor in Asia
The I-V characteristic of threshold zone, reference voltage VREFIt is represented by：
Wherein, tOX,24And tOX,25It is the oxidated layer thickness of metal-oxide-semiconductor M24 and metal-oxide-semiconductor M25.
The threshold voltage of NMOS tube has negative temperature coefficient, and its expression formula is：
VTH=VTH0-κT (18)
In formula, VTH0Threshold voltage when representing that degree temperature is 0K absolutely, κ is VTHTemperature coefficient TC (κ=dVTH/ dT), because
This △ VTHWith negative temperature coefficient.△ V with negative temperature coefficientTHWith the V with positive temperature coefficientT, can be with through overregulating
Obtain temperature independent output reference voltage VREF。
Threshold voltage is further represented by：
In formula, εSiRepresent the relative dielectric constant of silicon substrate, NAIt is substrate doping, niFor intrinsic carrier is dense
Degree, EgIt is band gap, ψBIt is fermi level potential energy and the difference of intrinsic level potential energy, VTHTemperature coefficient κ (κ=dVTH/ dT) can be with table
It is shown as：
In formula, NcIt is effective density of states of conduction band, NvIt is effective density of states of valence band, ignores bulk effect, then can draws defeated
Go out reference voltage to be represented by with the relational expression of temperature
The temperature coefficient for making reference voltage is zero, then can determine the breadth length ratio of metal-oxide-semiconductor：
As can be seen that by K24/K25Carefully adjustment, can obtain the reference voltage that temperature coefficient is zero, add electric capacity
C2To improve supply-voltage rejection ratio.
The utility model is not used passive resistance, diode or triode, compatible with CMOS technology, substantially reduces version
The area of pictural surface, reduces production cost, low in energy consumption, while having high PSRR and low-voltage regulation.In SMIC 0.18-
Under umCMOS technological standards, emulation is designed using Cadence Spectre emulators, simulation result shows, in 1.8V electricity
Under the voltage of source, the supply-voltage rejection ratio of this reference voltage source is -61.8dB in low frequency, is -62.5dB in high frequency, -
There is 17.5ppm/ DEG C of temperature coefficient, its power consumption is 133.8nW within the temperature range of 45-150 DEG C；In 0.7V -3.3V electricity
There is 0.23% line-voltage regulation, these simulation results shows validity of above measure in the voltage range of source.
Claims (6)
1. a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source, it is characterized in that, including start-up circuit, IPTATaBase
Quasi- current source circuit, IPTATbReference current source circuit and temperature-compensation circuit；
Start-up circuit is connected to IPTATaReference current source circuit and IPTATbReference current source circuit, and when reference voltage source is opened
There is provided electric current so that reference voltage source breaks away from degeneracy bias point, into normal operating conditions；
IPTATaReference current source circuit produces a bias current IPa, for temperature-compensation circuit provides current offset；
IPTATbReference current source circuit produces a bias current IPb, for temperature-compensation circuit provides current offset；
Temperature-compensation circuit is by IPTATaReference current source circuit and IPTATbBeing directly proportional to temperature produced by reference current source circuit
Bias current IPaAnd IPbRespectively with poor after different multiples, a temperature independent reference current I is obtainedREF, and drive
Metal-oxide-semiconductor obtains an output voltage not influenceed by supply voltage and temperature change in temperature-compensation circuit.
2. a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source according to claim 1, its feature exists
In：Start-up circuit is made up of metal-oxide-semiconductor M1-M5 and electric capacity C1；
The source electrode of metal-oxide-semiconductor M1 and metal-oxide-semiconductor M2 meets power vd D；The grid of metal-oxide-semiconductor M1-M5, the drain electrode of metal-oxide-semiconductor M2, and electric capacity C1
Top crown be connected；Metal-oxide-semiconductor M1 is connected with the drain electrode of metal-oxide-semiconductor M5, and is connected to the source electrode of metal-oxide-semiconductor M3 and metal-oxide-semiconductor M4；Metal-oxide-semiconductor
The drain electrode of M3 forms the startup output end set_Ipa of start-up circuit, and is connected to IPTATaReference current source circuit；The leakage of metal-oxide-semiconductor M4
Pole forms the startup output end set_Ipb of start-up circuit, and is connected to IPTATbReference current source circuit；The source electrode and electricity of metal-oxide-semiconductor M5
The bottom crown for holding C1 is connected to ground GND.
3. a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source according to claim 1, its feature exists
In：IPTATaReference current source circuit is made up of metal-oxide-semiconductor M27-M45；
The source electrode of metal-oxide-semiconductor M27-M30 is connected to power vd D；The drain electrode of the grid connection metal-oxide-semiconductor M28 of metal-oxide-semiconductor M27-M30 and MOS
The source electrode of pipe M32, and form IPTATaThe bias current output end Ipa1 of reference current source circuit, and connect temperature-compensation circuit
The grid of metal-oxide-semiconductor M18；The drain electrode of metal-oxide-semiconductor M27 is connected with the source electrode of metal-oxide-semiconductor M31；The drain electrode of metal-oxide-semiconductor M29 and metal-oxide-semiconductor M33's
Source electrode is connected；The drain electrode of metal-oxide-semiconductor M30 is connected with the source electrode of metal-oxide-semiconductor M34；The grid connection metal-oxide-semiconductor M32 of metal-oxide-semiconductor M31-M34,
The drain electrode of M36, and form IPTATaThe bias current output end Ipa2 of reference current source circuit, and it is connected to temperature-compensation circuit
The grid of metal-oxide-semiconductor M21；The grid of metal-oxide-semiconductor M35-M38 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M31, M35, and forms IPTATaBase
The startup input set_Ipa of quasi- current source circuit, is connected to start-up circuit；The drain electrode of metal-oxide-semiconductor M33, M37 is connected；Metal-oxide-semiconductor M34,
The drain electrode of M38 is connected；The grid of metal-oxide-semiconductor M39, M43, M45 is connected, and is connected to the leakage of the source electrode and metal-oxide-semiconductor M39 of metal-oxide-semiconductor M35
Pole；The source electrode of metal-oxide-semiconductor M39-M40 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M43；The leakage of the source electrode and metal-oxide-semiconductor M40 of metal-oxide-semiconductor M36
Extremely it is connected；The grid of metal-oxide-semiconductor M40-M41 is connected, and is connected to the drain electrode of the source electrode and metal-oxide-semiconductor M41 of metal-oxide-semiconductor M37；Metal-oxide-semiconductor
The source electrode of M41-M42 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M44；The grid of metal-oxide-semiconductor M42, M44 is connected, and is connected to metal-oxide-semiconductor
The drain electrode of the source electrode and metal-oxide-semiconductor M42 of M38；The source electrode of metal-oxide-semiconductor M43-M44 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M45；Metal-oxide-semiconductor
The source electrode of M45 is connected to ground GND.
4. a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source according to claim 1, its feature exists
In：IPTATbReference current source circuit is made up of metal-oxide-semiconductor M6-M17；
The source electrode of metal-oxide-semiconductor M6-M8 is connected to power vd D；The grid of metal-oxide-semiconductor M6-M8 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M6
With the source electrode of metal-oxide-semiconductor M9；The drain electrode of metal-oxide-semiconductor M7 is connected with the source electrode of metal-oxide-semiconductor M10；The drain electrode of metal-oxide-semiconductor M8 and the source of metal-oxide-semiconductor M11
Extremely it is connected；The grid of metal-oxide-semiconductor M9-M11 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M9, M12；The grid phase of metal-oxide-semiconductor M12-M13
Connect, and be connected to the drain electrode of metal-oxide-semiconductor M10, M13, form IPTATbReference current source circuit starts input set_Ipb, is connected to and opens
Dynamic circuit；The source electrode of metal-oxide-semiconductor M12 is connected with the drain electrode of metal-oxide-semiconductor M14；The grid of metal-oxide-semiconductor M14-M15 is connected, and is connected to MOS
The drain electrode of the source electrode and metal-oxide-semiconductor M15 of pipe M13；The source electrode of metal-oxide-semiconductor M14 is connected with the drain electrode of metal-oxide-semiconductor M16；Metal-oxide-semiconductor M16-M17's
The drain electrode of grid connection metal-oxide-semiconductor M11, M17, and form IPTATbThe bias current output end Ipb1 of reference current source circuit, and connect
To temperature-compensation circuit；The source electrode of metal-oxide-semiconductor M15-M17 is connected to ground GND.
5. a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source according to claim 1, its feature exists
In：Temperature-compensation circuit is made up of metal-oxide-semiconductor M18-M26 and electric capacity C2；
The source electrode of metal-oxide-semiconductor M18-M20 is connected to power vd D；The grid of metal-oxide-semiconductor M18 forms the bias current of temperature-compensation circuit
Input Ipa1, and it is connected to IPTATaReference current source circuit；The drain electrode of metal-oxide-semiconductor M18 is connected with the source electrode of metal-oxide-semiconductor M21；Metal-oxide-semiconductor
The grid of M19-M20 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M19 and the source electrode of metal-oxide-semiconductor M22；The drain electrode of metal-oxide-semiconductor M20 and MOS
The source electrode of pipe M23 is connected；The grid of metal-oxide-semiconductor M21 forms the bias current inputs Ipa2 of temperature-compensation circuit, and is connected to IPTATa
Reference current source circuit；The grid of metal-oxide-semiconductor M22-M23 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M21, M22, M26；Metal-oxide-semiconductor
The grid of M24-M25 is connected, and is connected to the drain electrode of metal-oxide-semiconductor M23-M24；The source electrode of metal-oxide-semiconductor M24 and the drain electrode phase of metal-oxide-semiconductor M25
Connect, and be connected to the top crown of electric capacity C2, be the output end of whole reference voltage source as temperature-compensation circuit；Metal-oxide-semiconductor M26's
Grid forms bias current inputs Ipb1, and is connected to IPTATbReference current source circuit；The source electrode and electric capacity of metal-oxide-semiconductor M25-M26
The bottom crown of C2 is connected to ground GND.
6. a kind of low-voltage nanowatt magnitude whole CMOS current-mode reference voltage source according to claim 5, its feature exists
In：Metal-oxide-semiconductor M24 is that normal voltage is the metal-oxide-semiconductor of 1.8V, and metal-oxide-semiconductor M25 is that normal voltage is the metal-oxide-semiconductor of 3.3V.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106527559A (en) * | 2016-12-28 | 2017-03-22 | 桂林电子科技大学 | Low-voltage nanowatt-scale full CMOS current mode reference voltage source |
| CN109164867A (en) * | 2018-11-16 | 2019-01-08 | 西安电子科技大学 | Full MOS reference current generating circuit |
| CN109388172A (en) * | 2018-11-23 | 2019-02-26 | 西安电子科技大学 | A kind of low-voltage and low-power dissipation cmos voltage reference circuit |
| CN114721459A (en) * | 2022-04-06 | 2022-07-08 | 深圳市中芯同创科技有限公司 | High-stability low-power-consumption linear voltage-stabilizing integrated circuit composed of multiple MOS (metal oxide semiconductor) tubes |
-
2016
- 2016-12-28 CN CN201621454868.XU patent/CN206292654U/en not_active Withdrawn - After Issue
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106527559A (en) * | 2016-12-28 | 2017-03-22 | 桂林电子科技大学 | Low-voltage nanowatt-scale full CMOS current mode reference voltage source |
| CN109164867A (en) * | 2018-11-16 | 2019-01-08 | 西安电子科技大学 | Full MOS reference current generating circuit |
| CN109388172A (en) * | 2018-11-23 | 2019-02-26 | 西安电子科技大学 | A kind of low-voltage and low-power dissipation cmos voltage reference circuit |
| CN114721459A (en) * | 2022-04-06 | 2022-07-08 | 深圳市中芯同创科技有限公司 | High-stability low-power-consumption linear voltage-stabilizing integrated circuit composed of multiple MOS (metal oxide semiconductor) tubes |
| CN114721459B (en) * | 2022-04-06 | 2023-09-01 | 深圳市中芯同创科技有限公司 | High-stability low-power-consumption linear voltage-stabilizing integrated circuit composed of multiple MOS (metal oxide semiconductor) tubes |
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