CN207051761U - A kind of high-precision reference voltage source based on unlike material resistance - Google Patents

A kind of high-precision reference voltage source based on unlike material resistance Download PDF

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CN207051761U
CN207051761U CN201720907078.0U CN201720907078U CN207051761U CN 207051761 U CN207051761 U CN 207051761U CN 201720907078 U CN201720907078 U CN 201720907078U CN 207051761 U CN207051761 U CN 207051761U
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oxide
semiconductor
metal
drain electrode
grid
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徐卫林
刘俊昕
孙晓菲
岳宏卫
李海鸥
段吉海
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Guilin University of Electronic Technology
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Guilin University of Electronic Technology
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Abstract

The utility model discloses a kind of high-precision reference voltage source based on unlike material resistance, is made up of the start-up circuit, PTAT current generation circuit, CTAT current generation circuit and the reference voltage generating circuit that are parallel between power vd D and ground.Start-up circuit is used to provide starting current in power supply electrifying, reference voltage source is broken away from degeneracy bias point.PTAT current generation circuit and CTAT current generation circuit, supply-voltage rejection ratio and voltage regulation factor are improved using common-source common-gate current mirror, is respectively used to produce with positive temperature coefficient electric current and with negative temperature parameter current.Reference voltage generating circuit is used for the reference voltage for producing Low Drift Temperature, using common-source common-gate current mirror, replica current and summation is overlapped from PTAT current generation circuit and CTAT current generation circuit, zero temp shift reference current is produced, reference voltage generating circuit output voltage is whole reference voltage source output voltage Vref.The utility model can greatly improve the precision of reference voltage source.

Description

A kind of high-precision reference voltage source based on unlike material resistance
Technical field
It the utility model is related to technical field of integrated circuits, and in particular to a kind of high-precision base based on unlike material resistance Reference voltage source.
Background technology
Voltage-reference is that Analogous Integrated Electronic Circuits and Digital Analog Hybrid Circuits are (such as A/D and D/A converter, integrated regulator, low One of temperature drift amplifier and temperature sensor etc.) indispensable significant element circuit, for producing with high accuracy, high stable Property, do not change and the voltage of change with environment temperature, supply voltage, manufacture craft, noise and other factorses, carried for other circuits For a reference voltage, therefore, its parameter directly affects the performance of whole system.
The performance and integrated level of raising reference voltage source are always the focus of the research in the field.But traditional bandgap benchmark Voltage source produces reference voltage using identical material type resistance, ambipolar triode and operational amplifier etc., and usual precision is inadequate Height, temperature drift coefficient is not good enough, and power consumption is larger, and supply-voltage rejection ratio is poor, and chip area is excessive.
Utility model content
It is to be solved in the utility model be traditional benchmark voltage source circuit precision it is poor the problem of, there is provided one kind is based on The high-precision reference voltage source of unlike material resistance.
To solve the above problems, the utility model is achieved through the following technical solutions：
A kind of high-precision reference voltage source based on unlike material resistance, by the startup being parallel between power vd D and ground Circuit, PTAT current generation circuit, CTAT current generation circuit and reference voltage generating circuit composition；Start-up circuit, for Starting current is provided during power supply electrifying, reference voltage source is broken away from degeneracy bias point；PTAT current generation circuit, is total to using common source Cascode current mirror improves supply-voltage rejection ratio and voltage regulation factor, and generation has positive temperature coefficient electric current；CTAT current produces electricity Road, supply-voltage rejection ratio and voltage regulation factor are improved using common-source common-gate current mirror, generation has negative temperature parameter current；Base Quasi- voltage generation circuit, for producing the reference voltage of Low Drift Temperature, using common-source common-gate current mirror, from PTAT current generation circuit With replica current in CTAT current generation circuit and be overlapped summation, produce zero temp shift reference current, reference voltage produces electricity Road output voltage is reference voltage source output voltage Vref。
Above-mentioned PTAT current generation circuit is made up of metal-oxide-semiconductor M12-M19 and resistance R0；Metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13 source Pole is connected with power vd D；Metal-oxide-semiconductor M18 source electrode is directly connected with ground GND；Metal-oxide-semiconductor M19 source electrode connects through resistance R0 and ground GND Connect；Metal-oxide-semiconductor M12 drain electrode is connected with metal-oxide-semiconductor M14 source electrode；Metal-oxide-semiconductor M14 drain electrode is connected with metal-oxide-semiconductor M16 drain electrode；MOS Pipe M16 source electrode is connected with metal-oxide-semiconductor M18 drain electrode；Metal-oxide-semiconductor M13 drain electrode is connected with metal-oxide-semiconductor M15 source electrode；Metal-oxide-semiconductor M15's Drain electrode is connected with metal-oxide-semiconductor M17 drain electrode；Metal-oxide-semiconductor M17 source electrode is connected with metal-oxide-semiconductor M19 drain electrode；Metal-oxide-semiconductor M13 grid with After drain electrode connects altogether, it is connected with metal-oxide-semiconductor M12 grid, and is collectively forming the second branch current output of PTAT current generation circuit End, is connected with reference voltage generating circuit；After metal-oxide-semiconductor M15 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M14 grid, and The 3rd branch current output end of PTAT current generation circuit is collectively forming, is connected with reference voltage generating circuit；Metal-oxide-semiconductor M16 Grid connect altogether with drain electrode after, be connected with metal-oxide-semiconductor M17 grid, and be collectively forming the input of PTAT current generation circuit, with Start-up circuit connects；After metal-oxide-semiconductor M18 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M19 grid；
Above-mentioned CTAT current generation circuit is made up of metal-oxide-semiconductor M20-M27 and resistance R1；Metal-oxide-semiconductor M20 and metal-oxide-semiconductor M21 source Pole is connected with power vd D；Metal-oxide-semiconductor M26 source electrode is directly connected with ground GND；Metal-oxide-semiconductor M27 source electrode connects through resistance R1 and ground GND Connect；Metal-oxide-semiconductor M20 drain electrode is connected with metal-oxide-semiconductor M22 source electrode；Metal-oxide-semiconductor M22 drain electrode is connected with metal-oxide-semiconductor M24 drain electrode；MOS Pipe M24 source electrode is connected with metal-oxide-semiconductor M26 drain electrode；Metal-oxide-semiconductor M21 drain electrode is connected with metal-oxide-semiconductor M23 source electrode；Metal-oxide-semiconductor M23's Drain electrode is connected with metal-oxide-semiconductor M25 drain electrode；Metal-oxide-semiconductor M25 source electrode is connected with metal-oxide-semiconductor M27 drain electrode；Metal-oxide-semiconductor M21 grid with After drain electrode connects altogether, it is connected with metal-oxide-semiconductor M20 grid, and is collectively forming the 4th branch current output of CTAT current generation circuit End, is connected with reference voltage generating circuit；After metal-oxide-semiconductor M23 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M22 grid, and The 5th branch current output end of CTAT current generation circuit is collectively forming, is connected with reference voltage generating circuit；Metal-oxide-semiconductor M24 Grid with drain electrode connect altogether after, be connected with metal-oxide-semiconductor M25 grid；After metal-oxide-semiconductor M26 grid connects altogether with drain electrode, with metal-oxide-semiconductor M27 Grid connection；
The wherein resistance R0 of PTAT current generation circuit is different from the resistance R1 of CTAT current generation circuit material.
In such scheme, the resistance R of PTAT current generation circuit0For highly doped polysilicon resistance, CTAT current produces electricity The resistance R on road1For trap resistance.
In such scheme, the start-up circuit is made up of metal-oxide-semiconductor M1-M11；Metal-oxide-semiconductor M1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8 and MOS Pipe M10 source electrode is connected with power vd D；Metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor M11 source electrode and drain electrode, and metal-oxide-semiconductor M6 and Metal-oxide-semiconductor M9 source electrode is connected with ground GND；After metal-oxide-semiconductor M1 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M2 source electrode；Metal-oxide-semiconductor After M2 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M3 source electrode；After metal-oxide-semiconductor M3 grid connects altogether with drain electrode, with metal-oxide-semiconductor M4, Metal-oxide-semiconductor M5 connects with metal-oxide-semiconductor M6 grid；After metal-oxide-semiconductor M5 drain electrode connects altogether with metal-oxide-semiconductor M6 drain electrode, the grid with metal-oxide-semiconductor M7 Connection；After metal-oxide-semiconductor M8 grid and metal-oxide-semiconductor M9 grid connect altogether, it is connected with metal-oxide-semiconductor M7 grid；Metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 Drain electrode be connected with metal-oxide-semiconductor M10 and metal-oxide-semiconductor M11 grid；Metal-oxide-semiconductor M11 drain electrode is exported as start-up circuit and PTAT current Generation circuit connects.
In such scheme, the reference voltage generating circuit is made up of metal-oxide-semiconductor M28-M33 and electric capacity C1；Metal-oxide-semiconductor M28 and Metal-oxide-semiconductor M30 source electrode is connected with power vd D；Metal-oxide-semiconductor M33 source electrode is connected with ground GND；Metal-oxide-semiconductor M28 grid forms benchmark Second current branch input of voltage generation circuit, and be connected with PTAT current generation circuit；Metal-oxide-semiconductor M29 grid is formed 3rd current branch input of reference voltage generating circuit, and be connected with PTAT current generation circuit；Metal-oxide-semiconductor M30 grid The 4th current branch input of reference voltage generating circuit is formed, and is connected with CTAT current generation circuit；Metal-oxide-semiconductor M31's Grid forms the 5th current branch input of reference voltage generating circuit, and is connected with CTAT current generation circuit；Metal-oxide-semiconductor M28 drain electrode is connected with metal-oxide-semiconductor M29 source electrode；Metal-oxide-semiconductor M30 drain electrode is connected with metal-oxide-semiconductor M31 source electrode；Metal-oxide-semiconductor M29 leakage Pole, metal-oxide-semiconductor M31 drain electrode, metal-oxide-semiconductor M32 grid are connected with the grid of drain electrode and metal-oxide-semiconductor M33；Metal-oxide-semiconductor M33 drain electrode After being connected with metal-oxide-semiconductor M32 source electrode, the reference voltage V of reference voltage generating circuit namely whole base station voltage source is formedref's Output end；Electric capacity C1, is parallel to reference voltage VrefOutput end and ground GND between.
In such scheme, electric capacity C1For conventional capacitive.
Compared with prior art, the utility model has following features：
1st, PTAT current generation circuits and CTAT current identical using main body circuit structure and that internal resistance material is different To produce the reference current with zero temp shift, so as to greatly improve the precision of reference voltage source；
2nd, electric capacity is not used in start-up circuit, reduces chip area；Using two phase inverters, power-on time is slow, preferably Break away from degeneracy bias point；
3rd, reference voltage produces only produces the reference voltage of zero temp shift by 3.3V and 1.8V metal-oxide-semiconductor, and greatly It is big to reduce power consumption.
Brief description of the drawings
Fig. 1 is a kind of structure chart of the high-precision reference voltage source based on unlike material resistance.
Fig. 2 is a kind of schematic diagram of the high-precision reference voltage source based on unlike material resistance.
Embodiment
For the purpose of this utility model, technical scheme and advantage is more clearly understood, below in conjunction with instantiation, and join According to accompanying drawing, the utility model is further described.
The utility model proposes a kind of high-precision reference voltage source based on unlike material resistance, and its concrete structure diagram is as schemed Shown in 1, by start-up circuit, PTAT current generation circuit, CTAT current generation circuit and the base being parallel between power vd D and ground Quasi- voltage generation circuit composition.Start-up circuit, its output end are connected with PTAT current generation circuit, for being carried in power supply electrifying For starting current, reference voltage source is set to break away from degeneracy bias point.PTAT current generation circuit and CTAT current generation circuit, its is defeated Go out end to be connected with reference voltage generating circuit, supply-voltage rejection ratio and voltage regulation factor improved using common-source common-gate current mirror, It is respectively used to produce with positive temperature coefficient electric current and with negative temperature parameter current.Reference voltage generating circuit, for producing The reference voltage of Low Drift Temperature, it is multiple from PTAT current generation circuit and CTAT current generation circuit using common-source common-gate current mirror Electric current processed is simultaneously overlapped summation, produces zero temp shift reference current, reference voltage generating circuit output voltage is whole benchmark Voltage source output voltage Vref。
The start-up circuit includes metal-oxide-semiconductor M1-MOS pipes M11.Wherein, metal-oxide-semiconductor M1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M10 source electrode is connected with power vd D.Metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor M11 source electrode and drain electrode, and metal-oxide-semiconductor M6, MOS Pipe M9 source electrode is connected with ground GND.Metal-oxide-semiconductor M1 grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M2 that drains.Metal-oxide-semiconductor M2's Grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M3 that drains.After metal-oxide-semiconductor M3 grid connects altogether with drain electrode, the grid with metal-oxide-semiconductor M4 Connection.After metal-oxide-semiconductor M5 grid and metal-oxide-semiconductor M6 grid connect altogether, it is connected with metal-oxide-semiconductor M3 grid.Metal-oxide-semiconductor M5 drain electrode with After metal-oxide-semiconductor M6 drain electrode connects altogether, it is connected with metal-oxide-semiconductor M7 grid.After metal-oxide-semiconductor M8 grid and metal-oxide-semiconductor M9 grid connect altogether, with Metal-oxide-semiconductor M7 grid connection.After metal-oxide-semiconductor M8 drain electrode connects altogether with metal-oxide-semiconductor M9 drain electrode, it is connected with metal-oxide-semiconductor M10 grid.MOS Pipe M11 grid connects with being connected metal-oxide-semiconductor M10 grid.Metal-oxide-semiconductor M11 drain electrode is as output and PTAT current generation circuit Connection.
Start-up circuit, active pull-up, metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor are formed by metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 M10 forms electric capacity, and metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 form two phase inverters, and the drain electrode through metal-oxide-semiconductor M11 is defeated Go out electric current, for making a reference source break away from degeneracy bias point in power supply electrifying.This start-up circuit does not need bulky capacitor, big resistance, For normal work without DC current, reducing area reduces power consumption.
The PTAT current generation circuit includes metal-oxide-semiconductor M12-MOS pipes M19 and resistance R0.Resistance R0For highly doped polycrystalline Silicon resistor.Wherein, metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13 source electrode are connected with power vd D.Metal-oxide-semiconductor M18 source electrode is connected with ground GND. Metal-oxide-semiconductor M12 drain electrode is connected with metal-oxide-semiconductor M14 source electrode.After metal-oxide-semiconductor M13 grid connects altogether with drain electrode, the grid with metal-oxide-semiconductor M12 Pole connects.Metal-oxide-semiconductor M13 drain electrode exports the second branch current, and is connected with reference voltage generating circuit.Metal-oxide-semiconductor M13 drain electrode It is connected with metal-oxide-semiconductor M15 source electrode.After metal-oxide-semiconductor M15 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M14 grid, metal-oxide-semiconductor M15 Drain electrode export the 3rd branch current, and be connected with reference voltage generating circuit.Metal-oxide-semiconductor M17 drain electrode and metal-oxide-semiconductor M15 leakage Pole connects.Metal-oxide-semiconductor M17 source electrode is connected with metal-oxide-semiconductor M19 drain electrode.Metal-oxide-semiconductor M19 source electrode is connected through resistance R0 with ground GND. After metal-oxide-semiconductor M16 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M17 grid.Metal-oxide-semiconductor M16 drain electrode and metal-oxide-semiconductor M14 leakage Pole connects.After metal-oxide-semiconductor M18 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M19 grid.Metal-oxide-semiconductor M18 drain electrode and metal-oxide-semiconductor M16 source electrode connection.
PTAT current generation circuit, utilize metal-oxide-semiconductor M18, the difference generation of metal-oxide-semiconductor M19 gate source voltages for being operated in sub-threshold region Bias voltage, then bias voltage is converted into by the bias current with positive temperature coefficient by resistance R0, then pass through cascade Current mirror copies to bias current in reference voltage generating circuit.Played using common-source common-gate current mirror and suppress power supply noise work With.
The CTAT current generation circuit includes metal-oxide-semiconductor M20-MOS pipes M27 and resistance R1.Resistance R1For trap resistance.Its In, metal-oxide-semiconductor M20 and metal-oxide-semiconductor M21 source electrode are connected with power vd D.Metal-oxide-semiconductor M26 source electrode is connected with ground GND.Metal-oxide-semiconductor M20's Drain electrode is connected with metal-oxide-semiconductor M22 source electrode.After metal-oxide-semiconductor M21 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M20 grid.MOS Pipe M21 drain electrode exports the 4th branch current, and is connected with reference voltage generating circuit.Metal-oxide-semiconductor M21 drain electrode and metal-oxide-semiconductor M23 Source electrode connection.After metal-oxide-semiconductor M23 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M22 grid, metal-oxide-semiconductor M23 drain electrode output 5th branch current, and be connected with reference voltage generating circuit.Metal-oxide-semiconductor M25 drain electrode is connected with metal-oxide-semiconductor M23 drain electrode.MOS Pipe M25 source electrode is connected with metal-oxide-semiconductor M27 drain electrode.Metal-oxide-semiconductor M27 source electrode is connected through resistance R1 with ground GND.Metal-oxide-semiconductor M24's After grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M25 grid.Metal-oxide-semiconductor M24 drain electrode is connected with metal-oxide-semiconductor M22 drain electrode.MOS After pipe M26 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M27 grid.Metal-oxide-semiconductor M26 drain electrode connects with metal-oxide-semiconductor M24 source electrode Connect.
CTAT current generation circuit, utilize metal-oxide-semiconductor M26, the difference generation of metal-oxide-semiconductor M27 gate source voltages for being operated in sub-threshold region Bias voltage, then bias voltage is converted into by the bias current with negative temperature coefficient by resistance R1, then pass through cascade Current mirror copies to bias current in reference voltage generating circuit.Played using common-source common-gate current mirror and suppress power supply noise work With.
The reference voltage generating circuit includes metal-oxide-semiconductor M28-MOS pipes M33 and electric capacity C1.Electric capacity C1For conventional capacitive.Its In, metal-oxide-semiconductor M28 and metal-oxide-semiconductor M30 source electrode are connected with power vd D.Metal-oxide-semiconductor M33 source electrode is connected with ground GND.The electric capacity C1, it is parallel to reference voltage VrefOutput end and ground GND between.The of metal-oxide-semiconductor M28 grid and PTAT current generation circuit Two current branch connect.Metal-oxide-semiconductor M28 drain electrode is connected with metal-oxide-semiconductor M29 source electrode.Metal-oxide-semiconductor M29 grid produces with PTAT current The 3rd current branch connection of raw circuit.Metal-oxide-semiconductor M30 grid is connected with the 4th current branch of CTAT current generation circuit. Metal-oxide-semiconductor M30 drain electrode is connected with metal-oxide-semiconductor M31 source electrode.Metal-oxide-semiconductor M31 grid and the 5th electric current of CTAT current generation circuit Branch road connects.After metal-oxide-semiconductor M29 drain electrode connects altogether with metal-oxide-semiconductor M31 drain electrode, it is connected with metal-oxide-semiconductor M32 grid.Metal-oxide-semiconductor M32's After grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M33 grid.Metal-oxide-semiconductor M33 drain electrode be connected with metal-oxide-semiconductor M32 source electrode after with Reference voltage VrefOutput end connection.
Reference voltage generating circuit, by adjusting common-source common-gate current mirror metal-oxide-semiconductor breadth length ratio, there will be positive temperature coefficient IPTATWith with negative temperature coefficient ICTATElectric current superposition is summed and then obtains the reference current of a zero-temperature coefficient, and plays suppression Power supply noise effect processed.The base with Low Drift Temperature is produced by 3.3V metal-oxide-semiconductor M33 and 1.8V metal-oxide-semiconductor M32 gate source voltages difference again Quasi- voltage Vref。
Operation principle of the present utility model is：In start-up circuit, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 grid leaks connect electrification Resistance acts on, and metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor M10 source and drain are equivalent to electric capacity, metal-oxide-semiconductor M5, metal-oxide-semiconductor M6 composition first with being connected to Phase inverter, metal-oxide-semiconductor M8, metal-oxide-semiconductor M9 form the second phase inverter, and metal-oxide-semiconductor M5, metal-oxide-semiconductor M8, metal-oxide-semiconductor M11 source voltage are VDD, Supply voltage VDD, which starts from scratch, rises to VTHAfterwards, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 are gradually turned on, for the MOS as electric capacity Pipe M4 charges, and metal-oxide-semiconductor M4 top crowns are low level, metal-oxide-semiconductor M5 conductings, metal-oxide-semiconductor M6 cut-offs, are charged for metal-oxide-semiconductor M7, work as metal-oxide-semiconductor M4 charging completes, metal-oxide-semiconductor M4 top crowns are high level, and metal-oxide-semiconductor M5 cut-offs, metal-oxide-semiconductor M6 conductings, metal-oxide-semiconductor M7 top crowns are low electricity It is flat, metal-oxide-semiconductor M8 conductings, metal-oxide-semiconductor M9 cut-offs, charged for metal-oxide-semiconductor M10, when metal-oxide-semiconductor M7 charging completes, metal-oxide-semiconductor M7 top crowns are height Level, metal-oxide-semiconductor M8 cut-offs, metal-oxide-semiconductor M9 conductings, when metal-oxide-semiconductor M10 top crowns current potential be low level, make metal-oxide-semiconductor M11 conductings, by electricity Stream is injected into PTAT current generation circuit by 11 metal-oxide-semiconductors breaks away from degeneracy bias point, when metal-oxide-semiconductor M10 charging completes, upper pole Plate current potential is high level, ends metal-oxide-semiconductor M11, and start-up circuit and a reference source core circuit depart from, complete metal-oxide-semiconductor M1 after starting, Metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 are in cut-off state, without quiescent current, do not consume power.
Core circuit of the present utility model includes PTAT current generation circuit, CTAT current generation circuit and reference voltage production Raw circuit, its principle are as shown in Figure 2.
Metal-oxide-semiconductor is operated in sub-threshold region, sub-threshold region MOS in PTAT current generation circuit, CTAT current generation circuit The electric current of pipe is the na order of magnitude, it is possible to obtains the circuit of super low-power consumption, metal-oxide-semiconductor with the metal-oxide-semiconductor for being operated in sub-threshold region Being operated in the I-V characteristic of sub-threshold region can represent such as (1) formula：
Work as VDSMore than 4 times VTWhen, V can be ignoredDSInfluence, being operated in the I-V characteristic of sub-threshold region can represent such as (2) Formula：
And then the gate source voltage such as (3) formula of metal-oxide-semiconductor can be obtained：
I0It is characterized electric current such as (4) formula：
μ is the electron mobility such as (5) formula of metal-oxide-semiconductor：
μ=μ0(T0/T)m (5)
VTIt is thermal voltage such as (6) formula：
VT=kBT/q (6)
Resistance is varied with temperature with a kind of more complicated nonlinear way, typically only takes polynomial first two, such as (7) Formula：
R (T)=R (T0)[1+10-6KR(T-T0)] (7)
Resistance R0The voltage at both ends is equal to the gate source voltage for the metal-oxide-semiconductor M18 for being operated in sub-threshold region and metal-oxide-semiconductor M19 grid Source voltage difference, PTAT current generation circuit electric current I can be obtainedPTATSuch as (8) formula：
Formula (8) both sides obtain to temperature derivation simultaneously：
From formula (9), electric current caused by PTAT current generation circuit has positive temperature coefficient.
Similarly, resistance R1The voltage at both ends is equal to the gate source voltage and metal-oxide-semiconductor M27 for the metal-oxide-semiconductor M26 for being operated in sub-threshold region Gate source voltage it is poor, CTAT current generation circuit electric current I can be obtainedCTATSuch as (10) formula：
Formula (10) both sides obtain to temperature derivation simultaneously：
From formula (11), electric current caused by CTAT current generation circuit has negative temperature coefficient.
In above-mentioned formula, IDIt is the drain terminal electric current of metal-oxide-semiconductor, K=W/L is the breadth length ratio of metal-oxide-semiconductor；W is the width of metal-oxide-semiconductor；L is The length of metal-oxide-semiconductor；μ0It is reference temperature T0Lower electron mobility；T0It is reference temperature；T is absolute temperature；M is humidity index；VGSIt is The gate source voltage of metal-oxide-semiconductor；VDSIt is the drain-source voltage of metal-oxide-semiconductor；VTHIt is the threshold voltage of metal-oxide-semiconductor；η is sub-threshold region slope factor, Depending on gate oxide and loss layer capacitance, it is determined as constant；kBIt is Boltzmann constant；Q is electron charge, and R (T) is certain temperature Lower resistance value, R (T0) it is that temperature is T0When resistance value, KRi=TC is the electricity that (ppm/ DEG C) of hundred every degree Celsius of a ten thousandths are unit Resistance temperature coefficient (TCR), 10-6It is the scale factor for proportional balancing method insertion.
Being replicated by current mirror M28, M29, M30 and M31 has positive temperature coefficient IPTATWith with negative temperature coefficient ICTATTo base Quasi- voltage generation circuit, by adjusting metal-oxide-semiconductor K18、K19、K26、K27And resistance KR0、KR1, and pass through n1And n2Multiply electric current superposition again Summation and then the reference current I for obtaining a zero-temperature coefficientrefSuch as (12) formula：
Known by sub-threshold region conductive characteristic, work as VDSDuring more than 200mV or so, characteristic such as (13) formula：
η>1, it is a thermodynamic voltage, therefore reference current IrefIt can be produced for the reference voltage of bandgap voltage reference M33 and M32 provides a stable bias current in circuit, drives its normal work.
In reference voltage generating circuit, ignore the influence of substrate mediating effect+6, utilize I- of the work metal-oxide-semiconductor in sub-threshold region V characteristics combine,
The reference voltage V of outputrefSuch as (14) formula：
VTWith positive temperature coefficient, Δ VTHWith negative temperature coefficient.From formula (14), can be obtained by mutually regulation To temperature independent output reference voltage Vref。
Wherein threshold voltage VTHExpression formula such as (15) formula：
VTH=VTH0-κT (15)
In formula, tOX,iRepresent metal-oxide-semiconductor MiGate oxide thickness；VTH0Represent threshold voltage value when absolute temperature is 0K； ψBFor the difference of fermi level potential energy and intrinsic level potential energy such as (16) formula；κ is VTHTemperature coefficient TC such as (17) formula；ΔVTHFor Metal-oxide-semiconductor M33、M32The difference of threshold voltage.
Therefore threshold voltage VTH(18) formula can be further expressed as：
In formula, EgFor band gap；εSiRepresent the relative dielectric constant of silicon substrate；NAFor substrate doping；NcFor conduction band Available state state density；NvFor the available state state density of valence band；niFor intrinsic carrier concentration.
Ignore bulk effect, the temperature coefficient TC such as (19) formula of reference voltage can be obtained：
The temperature coefficient for making reference voltage is zero, then such as (20) formula：
It can be seemed by (19) formula, by K32/K33Adjustment, can be to obtain temperature coefficient as zero reference voltage. Electric capacity C1Can improve supply-voltage rejection ratio.
The utility model aim to solve the problem that existing power supply tell poor existing voltage regulation factor, reference voltage temperature coefficient difference, Chip area is excessive, power consumption is excessive, reference voltage low precision, poor anti jamming capability, device and standard CMOS reference voltage source not The problem of matching and poor performance.Mainly it is made up of four parts：(1) start-up circuit, for providing electric current during power supply electrifying, base is made Reference voltage source breaks away from degeneracy bias point, it is not necessary to large area electric capacity, big valued resistor, without DC current after normal work, starts Circuit and core circuit depart from, and reducing area reduces power consumption.(2) PTAT current generation circuit, using being operated in sub-threshold region Metal-oxide-semiconductor gate source voltage difference produces bias voltage, then bias voltage is converted into the biased electrical with positive temperature coefficient by resistance Stream is played using common-source common-gate current mirror suppresses power supply noise effect.(3) CTAT current generation circuit, using being operated in subthreshold value The metal-oxide-semiconductor gate source voltage difference in area produces bias voltage, then bias voltage is converted into the inclined of negative temperature coefficient by resistance Electric current is put, is played using common-source common-gate current mirror and suppresses power supply noise effect.(4) reference voltage generating circuit, there will be positive temperature Spend coefficient and summed with the superposition of negative temperature parameter current different multiples and then obtain the reference current of a zero-temperature coefficient, and Play and suppress power supply noise effect, the benchmark with Low Drift Temperature is produced by 3.3V metal-oxide-semiconductor and 1.8V metal-oxide-semiconductor gate source voltage difference Voltage Vref.Under 0.18-umCMOS technological standards, the supply voltage of this reference voltage source in Cadence Spectre emulators Rejection ratio is-86.2dB in low frequency, is-68.1dB in high frequency, has 24ppm/ within the temperature range of-40-150 DEG C DEG C temperature coefficient, have in the range of 0.8V -3.4V supply voltages 0.0185% line-voltage regulation, its power consumption is 339nW, when 0.8V works, power consumption is only 88nW.It is of the present utility model compared with traditional circuit using unlike material resistance come The reference current with zero temp shift is produced, greatly improves the precision of reference voltage source, power consumption is extremely low to be only nanowatt magnitude and do not make With bipolar transistor and operational amplifier, the influence of temperature change can not only be eliminated and effectively reduce chip area, also Can be completely compatible with standard CMOS process, production cost is reduced, while have compared with high power supply voltage rejection ratio, extremely low power supply electricity The characteristics of pressing regulation, Low Drift Temperature coefficient etc..
It should be noted that although embodiment described in the utility model is illustrative above, but this is not to this The limitation of utility model, therefore the utility model is not limited in above-mentioned embodiment.The utility model is not being departed from In the case of principle, other embodiment that every those skilled in the art obtain under enlightenment of the present utility model is accordingly to be regarded as Within protection of the present utility model.

Claims (5)

  1. A kind of 1. high-precision reference voltage source based on unlike material resistance, by the startup electricity being parallel between power vd D and ground Road, PTAT current generation circuit, CTAT current generation circuit and reference voltage generating circuit composition；It is characterized in that
    Above-mentioned PTAT current generation circuit is made up of metal-oxide-semiconductor M12-M19 and resistance R0；Metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13 source electrode with Power vd D connections；Metal-oxide-semiconductor M18 source electrode is directly connected with ground GND；Metal-oxide-semiconductor M19 source electrode is connected through resistance R0 with ground GND； Metal-oxide-semiconductor M12 drain electrode is connected with metal-oxide-semiconductor M14 source electrode；Metal-oxide-semiconductor M14 drain electrode is connected with metal-oxide-semiconductor M16 drain electrode；Metal-oxide-semiconductor M16 source electrode is connected with metal-oxide-semiconductor M18 drain electrode；Metal-oxide-semiconductor M13 drain electrode is connected with metal-oxide-semiconductor M15 source electrode；Metal-oxide-semiconductor M15 leakage Pole is connected with metal-oxide-semiconductor M17 drain electrode；Metal-oxide-semiconductor M17 source electrode is connected with metal-oxide-semiconductor M19 drain electrode；Metal-oxide-semiconductor M13 grid and leakage After extremely connecing altogether, it is connected with metal-oxide-semiconductor M12 grid, and is collectively forming the second branch current output end of PTAT current generation circuit, It is connected with reference voltage generating circuit；After metal-oxide-semiconductor M15 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M14 grid, and jointly The 3rd branch current output end of PTAT current generation circuit is formed, is connected with reference voltage generating circuit；Metal-oxide-semiconductor M16 grid After pole connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M17 grid, and is collectively forming the input of PTAT current generation circuit, with startup Circuit connects；After metal-oxide-semiconductor M18 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M19 grid；
    Above-mentioned CTAT current generation circuit is made up of metal-oxide-semiconductor M20-M27 and resistance R1；Metal-oxide-semiconductor M20 and metal-oxide-semiconductor M21 source electrode with Power vd D connections；Metal-oxide-semiconductor M26 source electrode is directly connected with ground GND；Metal-oxide-semiconductor M27 source electrode is connected through resistance R1 with ground GND； Metal-oxide-semiconductor M20 drain electrode is connected with metal-oxide-semiconductor M22 source electrode；Metal-oxide-semiconductor M22 drain electrode is connected with metal-oxide-semiconductor M24 drain electrode；Metal-oxide-semiconductor M24 source electrode is connected with metal-oxide-semiconductor M26 drain electrode；Metal-oxide-semiconductor M21 drain electrode is connected with metal-oxide-semiconductor M23 source electrode；Metal-oxide-semiconductor M23 leakage Pole is connected with metal-oxide-semiconductor M25 drain electrode；Metal-oxide-semiconductor M25 source electrode is connected with metal-oxide-semiconductor M27 drain electrode；Metal-oxide-semiconductor M21 grid and leakage After extremely connecing altogether, it is connected with metal-oxide-semiconductor M20 grid, and is collectively forming the 4th branch current output end of CTAT current generation circuit, It is connected with reference voltage generating circuit；After metal-oxide-semiconductor M23 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M22 grid, and jointly The 5th branch current output end of CTAT current generation circuit is formed, is connected with reference voltage generating circuit；Metal-oxide-semiconductor M24 grid After pole connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M25 grid；After metal-oxide-semiconductor M26 grid connects altogether with drain electrode, the grid with metal-oxide-semiconductor M27 Pole connects；
    The wherein resistance R0 of PTAT current generation circuit is different from the resistance R1 of CTAT current generation circuit material.
  2. 2. a kind of high-precision reference voltage source based on unlike material resistance according to claim 1, it is characterized in that, PTAT The resistance R of current generating circuit0For highly doped polysilicon resistance, the resistance R of CTAT current generation circuit1For trap resistance.
  3. 3. a kind of high-precision reference voltage source based on unlike material resistance according to claim 1, it is characterized in that, it is described Start-up circuit is made up of metal-oxide-semiconductor M1-M11；
    Metal-oxide-semiconductor M1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M10 source electrode are connected with power vd D；Metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and MOS Pipe M11 source electrode and drain electrode, and metal-oxide-semiconductor M6 and metal-oxide-semiconductor M9 source electrode are connected with ground GND；Metal-oxide-semiconductor M1 grid is common with drain electrode After connecing, it is connected with metal-oxide-semiconductor M2 source electrode；After metal-oxide-semiconductor M2 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M3 source electrode；Metal-oxide-semiconductor After M3 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M4, metal-oxide-semiconductor M5 and metal-oxide-semiconductor M6 grid；Metal-oxide-semiconductor M5 drain electrode and MOS After pipe M6 drain electrode connects altogether, it is connected with metal-oxide-semiconductor M7 grid；After metal-oxide-semiconductor M8 grid and metal-oxide-semiconductor M9 grid connect altogether, with MOS Pipe M7 grid connection；Metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 drain electrode are connected with metal-oxide-semiconductor M10 and metal-oxide-semiconductor M11 grid；Metal-oxide-semiconductor M11 Drain electrode export as start-up circuit and be connected with PTAT current generation circuit.
  4. 4. a kind of high-precision reference voltage source based on unlike material resistance according to claim 1, it is characterized in that, it is described Reference voltage generating circuit is made up of metal-oxide-semiconductor M28-M33 and electric capacity C1；
    Metal-oxide-semiconductor M28 and metal-oxide-semiconductor M30 source electrode are connected with power vd D；Metal-oxide-semiconductor M33 source electrode is connected with ground GND；Metal-oxide-semiconductor M28 Grid form the second current branch input of reference voltage generating circuit, and be connected with PTAT current generation circuit；Metal-oxide-semiconductor M29 grid forms the 3rd current branch input of reference voltage generating circuit, and is connected with PTAT current generation circuit； Metal-oxide-semiconductor M30 grid forms the 4th current branch input of reference voltage generating circuit, and connects with CTAT current generation circuit Connect；Metal-oxide-semiconductor M31 grid forms the 5th current branch input of reference voltage generating circuit, and produces electricity with CTAT current Road connects；Metal-oxide-semiconductor M28 drain electrode is connected with metal-oxide-semiconductor M29 source electrode；Metal-oxide-semiconductor M30 drain electrode is connected with metal-oxide-semiconductor M31 source electrode； Metal-oxide-semiconductor M29 drain electrode, metal-oxide-semiconductor M31 drain electrode, metal-oxide-semiconductor M32 grid are connected with the grid of drain electrode and metal-oxide-semiconductor M33；MOS After pipe M33 drain electrode is connected with metal-oxide-semiconductor M32 source electrode, the base of reference voltage generating circuit namely whole base station voltage source is formed Quasi- voltage VrefOutput end；Electric capacity C1, is parallel to reference voltage VrefOutput end and ground GND between.
  5. 5. a kind of high-precision reference voltage source based on unlike material resistance according to claim 4, it is characterized in that, electric capacity C1For conventional capacitive.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107272804A (en) * 2017-07-25 2017-10-20 桂林电子科技大学 A kind of high-precision reference voltage source based on unlike material resistance
CN108897365A (en) * 2018-08-27 2018-11-27 桂林电子科技大学 A kind of high-precision current model reference voltage source
CN114967831A (en) * 2022-06-09 2022-08-30 深圳市聚芯影像有限公司 Reference current source integrated circuit
US11537153B2 (en) * 2019-07-01 2022-12-27 Stmicroelectronics S.R.L. Low power voltage reference circuits
CN116301179A (en) * 2023-03-23 2023-06-23 宁波大学 Low temperature coefficient reference current source circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107272804A (en) * 2017-07-25 2017-10-20 桂林电子科技大学 A kind of high-precision reference voltage source based on unlike material resistance
CN108897365A (en) * 2018-08-27 2018-11-27 桂林电子科技大学 A kind of high-precision current model reference voltage source
US11537153B2 (en) * 2019-07-01 2022-12-27 Stmicroelectronics S.R.L. Low power voltage reference circuits
CN114967831A (en) * 2022-06-09 2022-08-30 深圳市聚芯影像有限公司 Reference current source integrated circuit
CN116301179A (en) * 2023-03-23 2023-06-23 宁波大学 Low temperature coefficient reference current source circuit
CN116301179B (en) * 2023-03-23 2024-06-07 宁波大学 Low temperature coefficient reference current source circuit

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