CN107066015B - A kind of full cascade reference voltage source - Google Patents
A kind of full cascade reference voltage source Download PDFInfo
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- CN107066015B CN107066015B CN201710257347.8A CN201710257347A CN107066015B CN 107066015 B CN107066015 B CN 107066015B CN 201710257347 A CN201710257347 A CN 201710257347A CN 107066015 B CN107066015 B CN 107066015B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The present invention discloses a kind of full cascade reference voltage source, including start-up circuit, reference current source circuit and the temperature-compensation circuit being connected between power vd D and ground；Start-up circuit, reference current source circuit and temperature-compensation circuit are sequentially connected；Start-up circuit output end is connected with reference current source circuit, for providing starting current during power supply electrifying, reference voltage source is broken away from degeneracy bias point；The output end of reference current source circuit is connected with temperature-compensation circuit, supply-voltage rejection ratio and voltage regulation factor is improved using common-source common-gate current mirror, for producing reference current；Temperature-compensation circuit, for producing the reference voltage of Low Drift Temperature, using common-source common-gate current mirror, the replica current from reference current source circuit, temperature-compensation circuit output voltage is reference voltage source output voltage Vref.The present invention is the full cascode reference voltage sources of super low-power consumption, preferably suppresses power supply noise.
Description
Technical field
The present invention relates to technical field of integrated circuits, and in particular to a kind of full cascade reference voltage source.
Background technology
Reference voltage source is analog-digital converter (ADC), digital analog converter (DAC), switching regulator (SPSM, LDO, DC-DC
Converter etc.), oscillator, PLL, temperature sensor, the Analogous Integrated Electronic Circuits such as secondary battery protective chip and network communications circuits
With indispensable part in hybrid digital-analog integrated circuit.For produce with high accuracy, high stability, not with environment temperature,
The voltage that supply voltage, manufacture craft, noise and other factorses change and changed, one is provided with reference to electricity for other circuit modules
Pressure, therefore, reference voltage source occupies critically important status in Analogous Integrated Electronic Circuits, it directly affect circuit system performance and
Precision.
With the continuous increase of IC system integrated level, it is always the field to improve the performance of a reference source and integrated level
Research focus.Answer the low-power consumption demand of in the market electronic product, the voltage-reference element circuit basic as one, its
Low power dissipation design turns into inexorable trend, however, traditional bandgap reference voltage source causes power consumption larger due to needing big electric current,
Realize low-power consumption, circuit structure is complicated, and needs to use bipolar transistor in the design process, chip occupying area compared with
It is big and incompatible with the CMOS technology of standard.The CMOS reference voltage source circuits proposed later are because use is operated in saturation region
CMOS so that power consumption is excessive.Recently the reference voltage source based on sub-threshold region proposed, although temperature drift and PSRR
Preferably, but line-voltage regulation is poor, and chip area is excessive, and power consumption is excessive.
The content of the invention
It is to be solved by this invention be traditional benchmark voltage source circuit line-voltage regulation is poor, chip area is excessive
With power consumption it is excessive the problem of, there is provided a kind of full cascade reference voltage source.
To solve the above problems, the present invention is achieved by the following scheme：
A kind of full cascade reference voltage source, including start-up circuit, the reference current being connected between power vd D and ground
Source circuit and temperature-compensation circuit；Start-up circuit, reference current source circuit and temperature-compensation circuit are sequentially connected；Start-up circuit is defeated
Go out end to be connected with reference current source circuit, for providing starting current during power supply electrifying, reference voltage source is broken away from degeneracy biasing
Point；The output end of reference current source circuit is connected with temperature-compensation circuit, and supply voltage suppression is improved using common-source common-gate current mirror
System ratio and voltage regulation factor, for producing reference current；Temperature-compensation circuit, for producing the reference voltage of Low Drift Temperature, use
Common-source common-gate current mirror, the replica current from reference current source circuit, temperature-compensation circuit output voltage are the reference voltage
Source output voltage Vref。
In such scheme, start-up circuit is made up of metal-oxide-semiconductor M1-MOS pipes M11；Metal-oxide-semiconductor M1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8 and
Metal-oxide-semiconductor M11 source electrode is connected with power vd D；Metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor M10 source electrode and drain electrode, and metal-oxide-semiconductor M6
It is connected with metal-oxide-semiconductor M9 source electrode with ground GND；Metal-oxide-semiconductor M1 grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M2 that drains；Metal-oxide-semiconductor
M2 grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M3 that drains；After metal-oxide-semiconductor M3 grid connects altogether with drain electrode, with metal-oxide-semiconductor M4's
Grid connects；After metal-oxide-semiconductor M5 grid and metal-oxide-semiconductor M6 grid connect altogether, it is connected with metal-oxide-semiconductor M3 grid；Metal-oxide-semiconductor M5 drain electrode
After drain electrode with metal-oxide-semiconductor M6 connects altogether, it is connected with metal-oxide-semiconductor M7 grid；After metal-oxide-semiconductor M8 grid and metal-oxide-semiconductor M9 grid connect altogether,
It is connected with metal-oxide-semiconductor M7 grid；After metal-oxide-semiconductor M8 drain electrode connects altogether with metal-oxide-semiconductor M9 drain electrode, it is connected with metal-oxide-semiconductor M10 grid；
Metal-oxide-semiconductor M11 grid connects with being connected metal-oxide-semiconductor M10 grid；Output end of the metal-oxide-semiconductor M11 drain electrode as start-up circuit, with
The input connection of reference current source circuit.
In such scheme, reference current source circuit is made up of metal-oxide-semiconductor M12-MOS pipes M19 and resistance R1；Metal-oxide-semiconductor M12 and
Metal-oxide-semiconductor M13 source electrode is connected with power vd D；Metal-oxide-semiconductor M18 source electrode is connected with ground GND；Metal-oxide-semiconductor M12 drain electrode and metal-oxide-semiconductor
M14 source electrode connection；After metal-oxide-semiconductor M13 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M12 grid；Metal-oxide-semiconductor M13 drain electrode
The first current branch output end of reference current source circuit is formed, and is connected with the first current branch input of temperature-compensation circuit
Connect；Metal-oxide-semiconductor M13 drain electrode is connected with metal-oxide-semiconductor M15 source electrode；After metal-oxide-semiconductor M15 grid connects altogether with drain electrode, with metal-oxide-semiconductor M14's
Grid connects, and metal-oxide-semiconductor M15 drain electrode forms the second current branch output end of reference current source circuit, and electric with temperature-compensating
The second current branch input connection on road；Metal-oxide-semiconductor M17 drain electrode is connected with metal-oxide-semiconductor M15 drain electrode；Metal-oxide-semiconductor M17 source electrode
Drain electrode with metal-oxide-semiconductor M19 is connected；Metal-oxide-semiconductor M19 source electrode is connected through resistance R1 with ground GND；Metal-oxide-semiconductor M16 grid is common with drain electrode
After connecing, it is connected with metal-oxide-semiconductor M17 grid；Metal-oxide-semiconductor M16 drain electrode is connected with metal-oxide-semiconductor M14 drain electrode；Metal-oxide-semiconductor M18 grid with
After drain electrode connects altogether, it is connected with metal-oxide-semiconductor M19 grid；Metal-oxide-semiconductor M18 drain electrode is connected with metal-oxide-semiconductor M16 source electrode.
In such scheme, temperature-compensation circuit is made up of metal-oxide-semiconductor M20-MOS pipes M28, resistance R2 and electric capacity C1；Metal-oxide-semiconductor
M20 and metal-oxide-semiconductor M21 source electrode are connected with power vd D；Metal-oxide-semiconductor M26 source electrode is connected with ground GND；Metal-oxide-semiconductor M20 grid and
Metal-oxide-semiconductor M21 grid forms the input of the first current branch of temperature-compensation circuit, the first electricity with reference current source circuit
Flow the connection of branch road output end；Metal-oxide-semiconductor M20 drain electrode is connected with metal-oxide-semiconductor M22 source electrode；Metal-oxide-semiconductor M22 grid and metal-oxide-semiconductor M23
Grid formed temperature-compensation circuit the second current branch input, it is defeated with the second current branch of reference current source circuit
Go out end connection；After metal-oxide-semiconductor M24 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M25 grid；Metal-oxide-semiconductor M24 drain electrode and MOS
Pipe M22 drain electrode connection；After metal-oxide-semiconductor M26 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M27 grid；Metal-oxide-semiconductor M26 leakage
Pole is connected with metal-oxide-semiconductor M24 source electrode；Metal-oxide-semiconductor M21 drain electrode is connected with metal-oxide-semiconductor M23 source electrode；Metal-oxide-semiconductor M23 drain electrode and MOS
Pipe M25 drain electrode connection；Metal-oxide-semiconductor M25 source electrode is connected with metal-oxide-semiconductor M27 drain electrode；Metal-oxide-semiconductor M28 source electrode is through resistance R2 and ground
GND connections；Electric capacity C1 one end ground connection GND, the electric capacity C1 other end, metal-oxide-semiconductor M28 grid and drain electrode and metal-oxide-semiconductor M27
Source electrode connection after, form the output end of temperature-compensation circuit, the output end is the reference voltage V of whole reference voltage sourceref
Output end.
Compared with prior art, the present invention has following features：
1st, the full cascode reference voltage sources of super low-power consumption, preferably suppress power supply noise；
2nd, electric capacity is not used in start-up circuit, reduces chip area；Using two reversers, power-on time is slow, preferably
Break away from degeneracy bias point.
3rd, using cascode type temperature-compensation circuit structures, temperature-compensating can not only be realized, moreover it is possible to strengthen power supply suppression
Than.
Brief description of the drawings
Fig. 1 is a kind of schematic diagram of full cascade reference voltage source.
Embodiment
The present invention proposes a kind of full cascade reference voltage source, and its physical circuit framework is as shown in figure 1, including being connected to
Start-up circuit, reference current source circuit and temperature-compensation circuit between power vd D and ground GND.Start-up circuit output end and base
Quasi- current source circuit connection, for providing starting current during power supply electrifying, makes reference voltage source break away from degeneracy bias point.Benchmark electricity
The output end of current source circuit is connected with temperature-compensation circuit, and supply-voltage rejection ratio and voltage are improved using common-source common-gate current mirror
Regulation, for producing reference current.Temperature-compensation circuit, for producing the reference voltage of Low Drift Temperature, using cascade electricity
Mirror is flowed, the replica current from reference current source circuit, temperature-compensation circuit output voltage is the reference voltage source output voltage
Vref。
Above-mentioned start-up circuit includes metal-oxide-semiconductor M1-MOS pipes M11.Wherein, metal-oxide-semiconductor M1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8 and metal-oxide-semiconductor
M11 source electrode is connected with power vd D.Metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor M10 source electrode and drain electrode, and metal-oxide-semiconductor M6, MOS
Pipe M9 source electrode is connected with ground GND.Metal-oxide-semiconductor M1 grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M2 that drains.Metal-oxide-semiconductor M2's
Grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M3 that drains.After metal-oxide-semiconductor M3 grid connects altogether with drain electrode, the grid with metal-oxide-semiconductor M4
Connection.After metal-oxide-semiconductor M5 grid and metal-oxide-semiconductor M6 grid connect altogether, it is connected with metal-oxide-semiconductor M3 grid.Metal-oxide-semiconductor M5 drain electrode with
After metal-oxide-semiconductor M6 drain electrode connects altogether, it is connected with metal-oxide-semiconductor M7 grid.After metal-oxide-semiconductor M8 grid and metal-oxide-semiconductor M9 grid connect altogether, with
Metal-oxide-semiconductor M7 grid connection.After metal-oxide-semiconductor M8 drain electrode connects altogether with metal-oxide-semiconductor M9 drain electrode, it is connected with metal-oxide-semiconductor M10 grid.MOS
Pipe M11 grid connects with being connected metal-oxide-semiconductor M10 grid.Metal-oxide-semiconductor M11 drain electrode connects as output and reference current source circuit
Connect.
Start-up circuit, active pull-up, metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and metal-oxide-semiconductor are formed by metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3
M10 forms electric capacity, and metal-oxide-semiconductor M5, metal-oxide-semiconductor M6, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M9 form two reversers, and the drain electrode through metal-oxide-semiconductor M11 is defeated
Go out electric current, for making a reference source break away from degeneracy bias point in power supply electrifying.This start-up circuit does not need bulky capacitor, big resistance,
For normal work without DC current, reducing area reduces power consumption.
Said reference current source circuit includes metal-oxide-semiconductor M12-MOS pipes M19 and resistance R1.Wherein, metal-oxide-semiconductor M12 and metal-oxide-semiconductor
M13 source electrode is connected with power vd D.Metal-oxide-semiconductor M18 source electrode is connected with ground GND.Metal-oxide-semiconductor M12 drain electrode and metal-oxide-semiconductor M14 source
Pole connects.After metal-oxide-semiconductor M13 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M12 grid.Metal-oxide-semiconductor M13 drain electrode output first
Current branch, and be connected with temperature-compensation circuit.Metal-oxide-semiconductor M13 drain electrode is connected with metal-oxide-semiconductor M15 source electrode.Metal-oxide-semiconductor M15 grid
After pole connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M14 grid, metal-oxide-semiconductor M15 drain electrode exports the second current branch, and is mended with temperature
Repay circuit connection.Metal-oxide-semiconductor M17 drain electrode is connected with metal-oxide-semiconductor M15 drain electrode.Metal-oxide-semiconductor M17 source electrode and metal-oxide-semiconductor M19 drain electrode
Connection.Metal-oxide-semiconductor M19 source electrode is connected through resistance R1 with ground GND.After metal-oxide-semiconductor M16 grid connects altogether with drain electrode, with metal-oxide-semiconductor M17
Grid connection.Metal-oxide-semiconductor M16 drain electrode is connected with metal-oxide-semiconductor M14 drain electrode.After metal-oxide-semiconductor M18 grid connects altogether with drain electrode, with
Metal-oxide-semiconductor M19 grid connection.Metal-oxide-semiconductor M18 drain electrode is connected with metal-oxide-semiconductor M16 source electrode.
Reference current source circuit, it is inclined using the metal-oxide-semiconductor M18, the difference generation of metal-oxide-semiconductor M19 gate source voltages that are operated in sub-threshold region
Voltage is put, then bias voltage is converted into by bias current by resistance R1, then is answered bias current by common-source common-gate current mirror
Make in temperature-compensation circuit.Played using common-source common-gate current mirror and suppress power supply noise effect.
Said temperature compensation circuit includes metal-oxide-semiconductor M20-MOS pipes M28, resistance R2 and electric capacity C1.Wherein, metal-oxide-semiconductor M20 and
Metal-oxide-semiconductor M21 source electrode is connected with power vd D.Metal-oxide-semiconductor M26 source electrode is connected with ground GND.The electric capacity C1, it is connected to benchmark electricity
Press VrefOutput end and ground GND between.The first of metal-oxide-semiconductor M20 grid and metal-oxide-semiconductor M21 grid and reference current source circuit
Current branch connects.Metal-oxide-semiconductor M20 drain electrode is connected with metal-oxide-semiconductor M22 source electrode.Metal-oxide-semiconductor M22 grid and metal-oxide-semiconductor M23 grid
Second current branch of pole and reference current source circuit connects.After metal-oxide-semiconductor M24 grid connects altogether with drain electrode, with metal-oxide-semiconductor M25's
Grid connects.Metal-oxide-semiconductor M24 drain electrode is connected with metal-oxide-semiconductor M22 drain electrode.After metal-oxide-semiconductor M26 grid connects altogether with drain electrode, with MOS
Pipe M27 grid connection.Metal-oxide-semiconductor M26 drain electrode is connected with metal-oxide-semiconductor M24 source electrode.Metal-oxide-semiconductor M21 drain electrode is with metal-oxide-semiconductor M23's
Source electrode connects.Metal-oxide-semiconductor M23 drain electrode is connected with metal-oxide-semiconductor M25 drain electrode.Metal-oxide-semiconductor M25 source electrode connects with metal-oxide-semiconductor M27 drain electrode
Connect.After metal-oxide-semiconductor M28 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M27 source electrode, metal-oxide-semiconductor M28 drain electrode and reference voltage
VrefOutput end connection.Metal-oxide-semiconductor M28 source electrode is connected through resistance R2 with ground GND.
Temperature-compensation circuit, the reference voltage with Low Drift Temperature is produced using 1.8V and 3.3V metal-oxide-semiconductor gate source voltage difference,
And play and suppress power supply noise effect, then produced by 3.3V metal-oxide-semiconductor M26 and 1.8V metal-oxide-semiconductor M27 gate source voltages difference with low
The reference voltage V of temperature driftref。
The present invention operation principle be：
In start-up circuit, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 grid leaks connected resistance effect, metal-oxide-semiconductor M4, metal-oxide-semiconductor M7
Electric capacity is equivalent to metal-oxide-semiconductor M10 source and drain with being connected to, and metal-oxide-semiconductor M5, metal-oxide-semiconductor M6 form the first phase inverter, metal-oxide-semiconductor M8, metal-oxide-semiconductor M9
The second phase inverter is formed, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8, metal-oxide-semiconductor M11 source voltage are VDD, on supply voltage VDD starts from scratch
It is raised to VTHAfterwards, metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 are gradually turned on, to be charged as the metal-oxide-semiconductor M4 of electric capacity, pole on metal-oxide-semiconductor M4
Plate is low level, metal-oxide-semiconductor M5 conductings, metal-oxide-semiconductor M6 cut-offs, is charged for metal-oxide-semiconductor M7, when in metal-oxide-semiconductor M4 charging completes, metal-oxide-semiconductor M4
Pole plate is high level, and metal-oxide-semiconductor M5 cut-offs, metal-oxide-semiconductor M6 conductings, metal-oxide-semiconductor M7 top crowns are low level, and metal-oxide-semiconductor M8 is turned on, metal-oxide-semiconductor
M9 ends, and is charged for metal-oxide-semiconductor M10, and when metal-oxide-semiconductor M7 charging completes, metal-oxide-semiconductor M7 top crowns are high level, and metal-oxide-semiconductor M8 ends, MOS
Pipe M9 is turned on, and when metal-oxide-semiconductor M10 top crowns current potential be low level, makes metal-oxide-semiconductor M11 conductings, electric current is injected by 11 metal-oxide-semiconductors
Degeneracy bias point is broken away from into reference current source circuit, when metal-oxide-semiconductor M10 charging completes, top crown current potential is high level, makes MOS
Pipe M11 ends, and start-up circuit departs from a reference source core circuit, completes metal-oxide-semiconductor M1 after starting, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3 and is in
Cut-off state, without quiescent current, do not consume power.
The core circuit of the present invention includes reference current source circuit and temperature-compensation circuit.
Metal-oxide-semiconductor is operated in sub-threshold region in reference current source circuit, and the I-V characteristic that metal-oxide-semiconductor is operated in sub-threshold region can
To be expressed as (1) formula：
Work as VDSMore than 4 times VTWhen, V can be ignoredDSInfluence, being operated in the I-V characteristic of sub-threshold region can be expressed as (2)
Formula：
And then the gate source voltage such as (3) formula of metal-oxide-semiconductor can be obtained：
The voltage at resistance R1 both ends is equal to the gate source voltage for the metal-oxide-semiconductor M18 for being operated in sub-threshold region and metal-oxide-semiconductor M19 grid
Source voltage difference, reference current source circuit electric current I can be obtainedDSuch as (4) formula：
Wherein,
μ=μ0(T0/T)m (6)
VT=kBT/q (7)
By adjusting K18And K19Ratio so as to adjusting IDWith temperature T relationship, can obtain
In above-mentioned formula, IDIt is the drain terminal electric current of metal-oxide-semiconductor, K=W/L is the breadth length ratio of metal-oxide-semiconductor；W is the width of metal-oxide-semiconductor；L is
The length of metal-oxide-semiconductor；I0It is characterized electric current；μ is the electron mobility of metal-oxide-semiconductor；μ0It is reference temperature T0Lower electron mobility；T0It is ginseng
Examine temperature；T is absolute temperature；M is humidity index；VGSIt is the gate source voltage of metal-oxide-semiconductor；VDSIt is the drain-source voltage of metal-oxide-semiconductor；VTHIt is
The threshold voltage of metal-oxide-semiconductor；η is sub-threshold region slope factor, depending on gate oxide and loss layer capacitance, it is determined as constant；VTIt is
Thermal voltage；kBIt is Boltzmann constant；Q is electron charge.
In temperature-compensation circuit, the gate source voltage using 1.8V metal-oxide-semiconductors and 3.3V metal-oxide-semiconductors is poor, obtains a Low Drift Temperature
Reference voltage.Output reference voltage V can be drawn by circuit connecting relationref, such as (8) formula：
Vref=VGSM26-VGSM27 (8)
Using I-V characteristic of the work metal-oxide-semiconductor in sub-threshold region, output voltage V can be further obtainedref, such as (9) formula：
The expression formula of threshold voltage is (10) formula：
VTH=VTH0-κT (10)
VTWith positive temperature coefficient, △ VTHWith negative temperature coefficient, the V with positive temperature coefficient is utilizedTWith with subzero temperature
Spend the △ V of coefficientTHMutually regulation, therefore temperature independent output reference voltage V can be obtainedref；Threshold voltage further may be used
To be expressed as (11) formula：
Wherein,
The temperature coefficient of threshold voltage such as (13) formula：
Technique has little to no effect to temperature coefficient κ changes, therefore reference voltage VrefTemperature coefficient TC be hardly dependent on
Technique change, and then the temperature coefficient TC such as (14) formula of reference voltage can be drawn：
The temperature coefficient for making reference voltage is zero, then can determine the breadth length ratio such as (15) formula of metal-oxide-semiconductor：
From (15), formula is found out, by k27/k26Carefully adjustment, is better achieved temperature-compensating；Improved using electric capacity C1
The supply-voltage rejection ratio of bandgap voltage reference.
In above-mentioned formula, tOX,iRepresent metal-oxide-semiconductor Mi gate oxide thickness；VTH0Represent threshold value electricity when absolute temperature is 0K
Pressure value；κ=dVTH/ dT is VTH temperature coefficient TC；EgFor band gap；ψBFor the difference of fermi level potential energy and intrinsic level potential energy；
△VTHFor the difference of threshold voltage；εSiRepresent the relative dielectric constant of silicon substrate；NAFor substrate doping；NcFor having for conduction band
Imitate state state density；NvFor the available state state density of valence band；niFor intrinsic carrier concentration.
The present invention relates to IC design field, and in particular to a kind of full cascade reference voltage source, mainly solves
Prior art circuits power consumption is big, chip area is big, device and standard CMOS reference voltage source mismatch, and performance is not good enough to ask
Topic.Mainly it is made up of three parts：(1) start-up circuit, in a preferred embodiment of the invention, above-mentioned start-up circuit include PMOS
Metal-oxide-semiconductor M1, metal-oxide-semiconductor M2, metal-oxide-semiconductor M3, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8, metal-oxide-semiconductor M11 and NMOS tube metal-oxide-semiconductor M4, metal-oxide-semiconductor M6, metal-oxide-semiconductor
M7, metal-oxide-semiconductor M9, metal-oxide-semiconductor M10；For providing electric current during power supply electrifying, reference voltage source is set to break away from degeneracy bias point, it is not necessary to
Large area electric capacity, big valued resistor, for normal work without DC current, reducing area reduces power consumption.(2) reference current source circuit,
In a preferred embodiment of the invention, said reference current source circuit include PMOS metal-oxide-semiconductor M12, metal-oxide-semiconductor M13, metal-oxide-semiconductor M14,
Metal-oxide-semiconductor M15 and NMOS tube metal-oxide-semiconductor M16, metal-oxide-semiconductor M17, metal-oxide-semiconductor M18, metal-oxide-semiconductor M19 and resistance R1；Utilize cascode current
Mirror, which plays, suppresses power supply noise effect, using the working characteristics for being operated in sub-threshold region metal-oxide-semiconductor, produces reference current.(3) temperature
Compensation circuit, in a preferred embodiment of the invention, said temperature compensation circuit include PMOS metal-oxide-semiconductor M20, metal-oxide-semiconductor M21, MOS
Pipe M22, metal-oxide-semiconductor M23 and NMOS tube metal-oxide-semiconductor M24, metal-oxide-semiconductor M25, metal-oxide-semiconductor M26, metal-oxide-semiconductor M27, metal-oxide-semiconductor M28 and resistance R1, electricity
Hold C1；Using common-source common-gate current mirror, suppress power supply noise, it is poor using 1.8V metal-oxide-semiconductors and 3.3V metal-oxide-semiconductor gate source voltages, lead to
Mutually regulation is crossed, obtains a temperature independent reference voltage.Power consumption is extremely low to be only nanowatt magnitude and does not make bipolar transistor
Pipe, the influence of temperature change can not only be eliminated, reduce chip area, moreover it is possible to it is completely compatible with standard CMOS process, reduce life
Cost is produced, while there is the characteristics of good compared with performances such as high power supply voltage rejection ratio, Low line regulation, Low Drift Temperature coefficients.
Under SMIC 0.18-um CMOS technology standards, the supply voltage of this reference voltage source under Cadence Spectre emulators
Rejection ratio is-54.9dB in low frequency, is-76dB in high frequency, has 21.3ppm/ DEG C within the temperature range of-50-120
Temperature coefficient, have in the range of 1.3V -3.3V supply voltages 0.03% line-voltage regulation, its power consumption is
108nW, these simulation results shows validity of above measure.
The power consumption of the present invention is extremely low to be only nanowatt magnitude and bipolar transistor is not used, and can not only eliminate temperature change
Influence, reduce chip area, moreover it is possible to it is completely compatible with standard CMOS process, reduce production cost, while there is higher electricity
The characteristics of performances such as source voltage rejection ratio, extremely low line-voltage regulation, Low Drift Temperature coefficient are good.
Claims (3)
1. a kind of full cascade reference voltage source, including start-up circuit, the benchmark electricity being connected between power vd D and ground GND
Current source circuit and temperature-compensation circuit；Start-up circuit, reference current source circuit and temperature-compensation circuit are sequentially connected；
Start-up circuit output end is connected with reference current source circuit, for providing starting current during power supply electrifying, makes reference voltage
Break away from degeneracy bias point in source；
The output end of reference current source circuit is connected with temperature-compensation circuit, and supply voltage suppression is improved using common-source common-gate current mirror
System ratio and voltage regulation factor, for producing reference current；
Temperature-compensation circuit, for producing the reference voltage of Low Drift Temperature, using common-source common-gate current mirror, from reference current source circuit
Middle replica current, temperature-compensation circuit output voltage are reference voltage source output voltage Vref；
It is characterized in that：
Temperature-compensation circuit is made up of metal-oxide-semiconductor M20-MOS pipes M28, resistance R2 and electric capacity C1；
Metal-oxide-semiconductor M20 and metal-oxide-semiconductor M21 source electrode are connected with power vd D；Metal-oxide-semiconductor M26 source electrode is connected with ground GND；Metal-oxide-semiconductor M20
Grid and metal-oxide-semiconductor M21 grid formed temperature-compensation circuit the first current branch input, with reference current source circuit
The first current branch output end connection；Metal-oxide-semiconductor M20 drain electrode is connected with metal-oxide-semiconductor M22 source electrode；Metal-oxide-semiconductor M22 grid and
Metal-oxide-semiconductor M23 grid forms the input of the second current branch of temperature-compensation circuit, the second electricity with reference current source circuit
Flow the connection of branch road output end；After metal-oxide-semiconductor M24 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M25 grid；Metal-oxide-semiconductor M24 leakage
Pole is connected with metal-oxide-semiconductor M22 drain electrode；After metal-oxide-semiconductor M26 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M27 grid；Metal-oxide-semiconductor
M26 drain electrode is connected with metal-oxide-semiconductor M24 source electrode；Metal-oxide-semiconductor M21 drain electrode is connected with metal-oxide-semiconductor M23 source electrode；Metal-oxide-semiconductor M23 leakage
Pole is connected with metal-oxide-semiconductor M25 drain electrode；Metal-oxide-semiconductor M25 source electrode is connected with metal-oxide-semiconductor M27 drain electrode；Metal-oxide-semiconductor M28 source electrode is through electricity
Resistance R2 is connected with ground GND；Electric capacity C1 one end ground connection GND, the electric capacity C1 other end, metal-oxide-semiconductor M28 grid and drain electrode and
After metal-oxide-semiconductor M27 source electrode connection, the output end of temperature-compensation circuit is formed, the temperature-compensation circuit output end is whole base
The reference voltage V of reference voltage sourcerefOutput end.
A kind of 2. full cascade reference voltage source according to claim 1, it is characterised in that：Start-up circuit is by metal-oxide-semiconductor
M1-MOS pipes M11 is formed；
Metal-oxide-semiconductor M1, metal-oxide-semiconductor M5, metal-oxide-semiconductor M8 and metal-oxide-semiconductor M11 source electrode are connected with power vd D；Metal-oxide-semiconductor M4, metal-oxide-semiconductor M7 and MOS
Pipe M10 source electrode and drain electrode, and metal-oxide-semiconductor M6 and metal-oxide-semiconductor M9 source electrode are connected with ground GND；Metal-oxide-semiconductor M1 grid is common with drain electrode
The source electrode afterwards with metal-oxide-semiconductor M2 is connect to be connected；Metal-oxide-semiconductor M2 grid is connected with the source electrode connect altogether afterwards with metal-oxide-semiconductor M3 that drains；Metal-oxide-semiconductor M3
Grid with drain electrode connect altogether after, be connected with metal-oxide-semiconductor M4 grid；After metal-oxide-semiconductor M5 grid and metal-oxide-semiconductor M6 grid connect altogether, with
Metal-oxide-semiconductor M3 grid connection；After metal-oxide-semiconductor M5 drain electrode connects altogether with metal-oxide-semiconductor M6 drain electrode, it is connected with metal-oxide-semiconductor M7 grid；MOS
After pipe M8 grid and metal-oxide-semiconductor M9 grid connect altogether, it is connected with metal-oxide-semiconductor M7 grid；Metal-oxide-semiconductor M8 drain electrode is with metal-oxide-semiconductor M9's
After drain electrode connects altogether, it is connected with metal-oxide-semiconductor M10 grid；Metal-oxide-semiconductor M11 grid connects with being connected metal-oxide-semiconductor M10 grid；Metal-oxide-semiconductor
Output end of the M11 drain electrode as start-up circuit, is connected with the input of reference current source circuit.
A kind of 3. full cascade reference voltage source according to claim 1, it is characterised in that：Reference current source circuit by
Metal-oxide-semiconductor M12-MOS pipes M19 and resistance R1 are formed；
Metal-oxide-semiconductor M12 and metal-oxide-semiconductor M13 source electrode are connected with power vd D；Metal-oxide-semiconductor M18 source electrode is connected with ground GND；Metal-oxide-semiconductor M12
Drain electrode be connected with metal-oxide-semiconductor M14 source electrode；After metal-oxide-semiconductor M13 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M12 grid；
Metal-oxide-semiconductor M13 drain electrode forms the first current branch output end of reference current source circuit, and electric with the first of temperature-compensation circuit
Flow branch input connection；Metal-oxide-semiconductor M13 drain electrode is connected with metal-oxide-semiconductor M15 source electrode；Metal-oxide-semiconductor M15 grid connects altogether with drain electrode
Afterwards, the grid with metal-oxide-semiconductor M14 is connected, and metal-oxide-semiconductor M15 drain electrode forms the second current branch output end of reference current source circuit,
And it is connected with the second current branch input of temperature-compensation circuit；Metal-oxide-semiconductor M17 drain electrode is connected with metal-oxide-semiconductor M15 drain electrode；
Metal-oxide-semiconductor M17 source electrode is connected with metal-oxide-semiconductor M19 drain electrode；Metal-oxide-semiconductor M19 source electrode is connected through resistance R1 with ground GND；Metal-oxide-semiconductor M16
Grid with drain electrode connect altogether after, be connected with metal-oxide-semiconductor M17 grid；Metal-oxide-semiconductor M16 drain electrode is connected with metal-oxide-semiconductor M14 drain electrode；
After metal-oxide-semiconductor M18 grid connects altogether with drain electrode, it is connected with metal-oxide-semiconductor M19 grid；Metal-oxide-semiconductor M18 drain electrode and metal-oxide-semiconductor M16 source
Pole connects.
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| CN108363447B (en) * | 2018-03-02 | 2020-05-01 | 湖南大学 | Low-temperature coefficient full MOS type current source circuit with process compensation |
| CN109343653B (en) * | 2018-09-19 | 2020-07-24 | 安徽矽磊电子科技有限公司 | Starting circuit of band-gap reference voltage source |
| CN112684844B (en) * | 2019-10-18 | 2022-08-16 | 圣邦微电子（北京）股份有限公司 | Low dropout regulator |
| CN111552343B (en) * | 2020-05-22 | 2022-08-16 | 聚洵半导体科技（上海）有限公司 | Low-voltage low-current bias current circuit |
| CN111966158B (en) * | 2020-08-24 | 2021-10-01 | 中国电子科技集团公司第二十四研究所 | Complementary low-drift constant current source and control method thereof |
| CN113687683A (en) * | 2021-09-06 | 2021-11-23 | 武汉职业技术学院 | Pre-voltage stabilizing circuit |
| CN114546013A (en) * | 2022-01-26 | 2022-05-27 | 中山大学 | Reference starting circuit for detecting current by adopting comparator with mismatch |
| CN115145346B (en) * | 2022-08-02 | 2023-09-22 | 深圳市诚芯微科技股份有限公司 | Band gap reference circuit |
| CN115357085B (en) * | 2022-08-30 | 2023-08-08 | 广东工业大学 | Self-bias CMOS voltage reference source and method for determining linear sensitivity and power supply rejection ratio |
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| KR101645449B1 (en) * | 2009-08-19 | 2016-08-04 | 삼성전자주식회사 | Current reference circuit |
| CN203838588U (en) * | 2014-03-18 | 2014-09-17 | 苏州市职业大学 | Self-biasing band-gap reference source |
| CN104460799B (en) * | 2014-11-24 | 2017-04-05 | 中国科学院微电子研究所 | CMOS reference voltage source circuits |
| CN104950971B (en) * | 2015-06-11 | 2016-08-24 | 中国人民解放军国防科学技术大学 | A kind of low-power consumption subthreshold value type CMOS band-gap reference voltage circuit |
| CN105468085B (en) * | 2016-01-19 | 2017-06-06 | 桂林电子科技大学 | A kind of CMOS reference voltage sources without Bipolar transistors |
| CN206696736U (en) * | 2017-04-19 | 2017-12-01 | 桂林电子科技大学 | A kind of full cascade reference voltage source |
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