CN115145346B - Band gap reference circuit - Google Patents
Band gap reference circuit Download PDFInfo
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- CN115145346B CN115145346B CN202210922851.6A CN202210922851A CN115145346B CN 115145346 B CN115145346 B CN 115145346B CN 202210922851 A CN202210922851 A CN 202210922851A CN 115145346 B CN115145346 B CN 115145346B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The application relates to a band gap reference circuit, which relates to the field of integrated circuits, and comprises: the starting circuit, the core circuit and the compensation circuit are connected in sequence; the starting circuit is used for starting the core circuit to enter a stable working state when conducting electricity; and the feedback after the core circuit enters a stable working state is utilized to close the output of the starting circuit; the core circuit is used for entering a stable working state according to the output of the starting circuit and generating reference voltage output of low temperature drift; and the compensation circuit is used for outputting compensation current or voltage to the core circuit according to the detected current or voltage which is influenced by the temperature inside the core circuit, so that the reference voltage output by the core circuit is influenced by the temperature to be smaller than a first threshold value. The application has the technical effect that the output reference voltage is less affected by temperature.
Description
Technical Field
The application relates to the field of integrated circuits, in particular to a band gap reference circuit.
Background
At present, in an integrated circuit, all parameter indexes are affected by a process, temperature and the like, and a good band gap reference circuit can ensure the parameter precision of a chip. The bandgap reference circuit in the prior art is generally obtained by adding a voltage with a positive temperature characteristic and a voltage with a negative temperature characteristic, and the temperature characteristic of the reference can be designed to be better through reasonable combination.
As shown in fig. 1, a typical prior art bandgap reference circuit is shown on the left with a start-up circuit and on the right with a core circuit of bandgap reference. When the power-on is performed, the pull-down of the resistor R1 pulls down the grid ends of the field effect tube P1 and the field effect tube P2, a current mirror formed by the field effect tube P1 and the field effect tube P2 can be conducted, one current flows out of the field effect tube P2 to the core circuit, the degeneracy state of the core circuit is broken, then the pull-up current is generated by the field effect tube P9, the grid end voltages of the field effect tube P1 and the field effect tube P2 are pulled up, and meanwhile, the starting circuit is closed. In the core circuit, field effect transistors P3-P6 and a resistor R2 form a low-voltage-difference current mirror, field effect transistors N1-N4 and a resistor R3 form a low-voltage-difference current mirror, and the mirror proportion of the two groups of current mirrors is assumed to be 1: and 1, the two paths of currents are equal and are marked as I1. The EB junction voltage of the bipolar transistor Q2 is equal to the sum of the EB junction voltage of the bipolar transistor Q1 and the voltage drop across the resistor R3, and the area ratio of the bipolar transistor Q1 to the bipolar transistor Q2 is n:1, then there are:
VBE2＝VBE1+I1×R3 (1)
from equation (3), the current I1 is proportional to the temperature.
Assume that the mirror ratio of field effect transistor P7/P8 to field effect transistor P3/P4 is 1:1, the reference Vref may be expressed as:
according to the formula (4), vref is obtained by combining the voltage of the positive temperature coefficient and VBE3 of the negative temperature coefficient, and the Vref can be adjusted to be as close to zero temperature characteristic as possible by reasonably adjusting related parameters.
Fig. 2 is a temperature characteristic curve of a reference voltage Vref of a bandgap reference circuit in the prior art, which generally has a parabolic shape with downward opening because parameters such as electron mobility of a semiconductor and a forward voltage of a BE junction do not have absolute positive or negative temperature characteristics with temperature. According to the test experience of a large number of products, the temperature coefficient of Vref of the prior art can only be controlled between 20ppm and 100ppm, and although most of applications can be met, the prior art bandgap reference circuit obviously cannot meet the requirements of some high-precision applications, and a bandgap reference circuit with lower temperature drift is urgently needed.
Disclosure of Invention
In order to perform high-order temperature compensation on the reference voltage, the variation of the reference voltage or current along with the temperature is greatly reduced, and the design goal of low temperature drift is realized.
The band gap reference circuit provided by the application adopts the following technical scheme:
there is provided a bandgap reference circuit comprising: the starting circuit, the core circuit and the compensation circuit are connected in sequence;
the starting circuit is used for starting the core circuit to enter a stable working state when conducting electricity; and the feedback after the core circuit enters a stable working state is utilized to close the output of the starting circuit;
the core circuit is used for entering a stable working state according to the output of the starting circuit and generating reference voltage output of low temperature drift; the compensation circuit is used for outputting compensation current or voltage to the core circuit according to the detected current or voltage which is influenced by temperature inside the core circuit, so that the reference voltage of the low temperature drift output by the core circuit is influenced by temperature to be smaller than a first threshold value.
Preferably, the compensation circuit includes: the temperature detection circuit and the high-order compensation circuit are connected in sequence;
the temperature detection circuit is used for determining the type of current or voltage required to be compensated for by the output of the core circuit according to the current or voltage affected by the temperature inside the core circuit;
the high-order compensation circuit is used for compensating the output current or voltage of the core circuit according to the type of the current or voltage which is output by the temperature detection circuit and needs to be compensated.
Preferably, the temperature detection circuit includes: the first mirror current branch and the temperature control module are connected in series; the selection module is connected in series between the output end of the temperature control module and the high-order compensation circuit;
the first mirror current branch is used for generating a second current with the same size as the first current in the core circuit; the first current sequentially flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic in the core circuit, so that the reference voltage output by the core circuit is affected by temperature to be smaller than a second threshold value;
the temperature control module is as follows: for outputting a temperature dependent control signal to the selection module when the second current varies with temperature;
the selection module: and the high-order compensation circuit is used for calculating and outputting a selection signal for determining the type of current or voltage output by the high-order compensation circuit according to the received control signal.
Preferably, the first mirror current branch includes: at least one first semiconductor device having a current positive temperature characteristic or a current negative temperature characteristic; the current temperature characteristic of the first semiconductor device is consistent with the current temperature characteristic of a second semiconductor of a second mirror current branch within a core circuit through which the first current flows.
Preferably, the temperature control module includes: the first resistor R1 and the switch module are connected in parallel; when the second current flowing through the first resistor R1 is smaller than or larger than a third threshold value, the switch module outputs different control signals to the selection module.
Preferably, the selecting module includes: at least two inverters; any one of the at least two inverters selects the high-order compensation circuit to output compensation current or compensation voltage according to the control signal output by the temperature control module.
Preferably, the high-order compensation circuit includes:
a third mirror current branch circuit for outputting a third current of positive temperature characteristic to the core circuit under the condition that the temperature detection circuit is controlled to be turned on; the third current is consistent with the first current temperature coefficient inside the core circuit; the first current flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic in the core circuit, so that the reference voltage output by the core circuit is affected by temperature to be smaller than a second threshold value;
a negative temperature characteristic current source for outputting a fourth current of a negative temperature characteristic to the core circuit in a case where the temperature detection circuit is controlled to be turned on;
and under the control of the temperature detection circuit, the third current of the third mirror current branch and the fourth current of the negative temperature characteristic current source are output to the core circuit at the same time.
Preferably, the negative temperature characteristic current source includes:
negative temperature characteristic reference current source: for generating a fifth current having a negative temperature characteristic; the temperature coefficient of the fifth current is consistent with that of the fourth current;
a first current mirror: having a fourth mirror current branch and a fifth mirror current branch; the first current mirror image is used for taking the output of the fourth mirror image current branch as the output of the negative temperature characteristic current source; the fifth mirror current branch is connected with the negative temperature characteristic reference current source.
Preferably, the negative temperature characteristic reference current source includes: a third semiconductor device having a negative voltage temperature characteristic, and a second resistor R2 connected in parallel to the third semiconductor device; the fifth current generated on the second resistor R2 is the reference current of the first current mirror.
Preferably, the first semiconductor, the second semiconductor, or the third semiconductor is: a field effect transistor or a bipolar transistor.
In summary, the present application includes at least one of the following beneficial technical effects:
1. the output reference voltage is less affected by temperature;
2. the output compensation current precision of the high-order current compensation circuit is more accurate.
Drawings
Fig. 1 is a prior art bandgap reference circuit diagram.
Fig. 2 is a temperature characteristic diagram of a prior art bandgap reference circuit reference voltage Vref.
FIG. 3 is a logic block diagram of a bandgap reference circuit provided by the present application;
FIG. 4 is a graph showing the current as a function of temperature for compensation in accordance with the present application;
fig. 5 is a diagram of an embodiment of a bandgap reference circuit according to the present application.
Reference numerals illustrate:
1. a start-up circuit; 2. a core circuit;
3. a compensation circuit;
31. a temperature detection circuit; 32. a high-order compensation circuit;
311. a first mirrored current leg; 312. a temperature control module;
313. a selection module;
321. a third mirrored current leg; 322. a negative temperature characteristic current source;
3221. a negative temperature characteristic reference current source; 3222. a first current mirror.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application will be further described in detail with reference to the accompanying drawings 1 to 4 and examples. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
Term interpretation:
band gap reference: english (Bandgap voltage reference), often referred to simply as Bandgap. The most classical bandgap reference is a voltage reference with temperature independent, approximately 1.25V, using a sum of a voltage with positive temperature characteristics and a voltage with negative temperature characteristics, the temperature coefficients of which cancel each other. Because its reference voltage is not much different from the bandgap voltage of silicon, it is called bandgap reference.
The band gap reference circuit provided by the application adopts the following technical scheme:
as shown in fig. 3 and 4, there is provided a bandgap reference circuit including: the starting circuit 1, the core circuit 2 and the compensation circuit 3 are connected in sequence;
the starting circuit 1 is used for starting the core circuit 2 to enter a stable working state when conducting electricity; and the output of the starting circuit is closed by using the feedback after the core circuit 2 enters a stable working state; the start-up circuit 1 is only active when the core circuit 2 is started up, and is in an off state after the core circuit 2 is started up.
The core circuit 2 is used for entering a stable working state according to the output of the starting circuit 1 and generating reference voltage output of low temperature drift;
the compensation circuit 3 is configured to output a compensation current or voltage to the core circuit 2 according to the detected current or voltage affected by temperature inside the core circuit, so that the reference voltage of the low temperature drift output by the core circuit 2 is affected by temperature to be less than a first threshold value. In the prior art, if the compensation circuit 3 is not present, the range of the bandgap reference voltage output is: 1.25 V.+ -. 10mV. In view of the fact that the reference temperature characteristic of the prior art shows a parabolic shape with a downward opening, as shown in fig. 2, at low and high temperatures, the reference voltage is lower, a certain temperature in the middle, and the reference voltage is highest; the prior art reference parabolic peak temperature is typically between 40 and 60 ℃. In order to compensate for the parabolic shape with downward opening of the reference temperature characteristic in the prior art, the core circuit 2 can output the reference voltage with the difference smaller than a first threshold value in the vicinity of the lower temperature and the higher temperature, and the first threshold value range is smaller than +/-10 mV; obviously, the compensation circuit 3 is required to compensate more current or voltage at a position far from the parabolic vertex, and less current or voltage at a position near to the parabolic vertex; this achieves that the current or voltage output by the core circuit 2 exhibits a temperature-dependent value which is smaller than a certain value over a temperature range as wide as possible, i.e. the compensation is required as shown in fig. 4. The compensation current is Icomp and changes along with the temperature; when the temperature increases beyond a certain temperature critical point, the compensation current is Iptat, and belongs to the positive temperature characteristic of the current, namely, the current increases along with the temperature increase; when the temperature is less than a certain temperature critical point, the compensation current is Intat, and belongs to the negative temperature characteristic of the current, namely, the current is reduced along with the increase of the temperature. It can be obviously seen that the combination of fig. 2 and fig. 4 can counteract the technical problem that the output reference voltage also changes along with the temperature change in fig. 2. The temperature change can not influence the stability of the output reference voltage in the temperature range of 40-60 ℃.
Preferably, as shown in fig. 5, the compensation circuit 3 includes: a temperature detection circuit 31 and a high-order compensation circuit 32 connected in sequence;
the temperature detection circuit 31 is configured to determine a type of current or voltage to be compensated for by an output of the core circuit according to a current or voltage affected by temperature inside the core circuit 2; all of the reference voltages output from the core circuit 2 are changed with temperature, namely, because the physical characteristics of the devices inside the core circuit 2 are changed with temperature; the current positive temperature characteristic, that is, when the temperature increases, the current also increases; when the temperature is reduced, the current is also reduced; the so-called negative current temperature characteristic, i.e. when the temperature increases, the current decreases; as the temperature decreases, the current increases. The voltage positive temperature characteristic, that is, when the temperature increases, the voltage increases; when the temperature is reduced, the voltage is also reduced; the negative voltage temperature characteristic is that the voltage decreases when the temperature increases, and the voltage increases when the temperature decreases. The device inside the core circuit 2, it is selected that the device having the positive temperature characteristic and the device having the negative temperature characteristic are combined, thereby reducing fluctuation of the reference voltage output with temperature variation. Therefore, the temperature detection circuit 31 does not directly detect the temperature of the circuit, but detects the temperature-dependent current or voltage output from the temperature-dependent device inside the core circuit 2, thereby achieving the purpose of detecting the electrical temperature change. In the prior art, the stability of various physical characteristics of devices in integrated circuits has been very high; however, the problem of device variation with temperature remains. Therefore, in the case where the input power supply is stable, the influence of temperature on the integrated circuit becomes a factor that has the greatest influence on each output parameter of the device. Therefore, the combination of the device with the positive temperature characteristic and the device with the negative temperature characteristic can be properly utilized, and the situation of unstable output caused by the physical characteristics of the device can be well solved.
The high-order compensation circuit 32 is configured to compensate the output current or voltage of the core circuit 2 according to the type of the current or voltage to be compensated output by the temperature detection circuit 31. The high-order compensation circuit 32 is a device for performing current or voltage compensation as described above. The high order compensation circuit itself also has a temperature characteristic, but this is just a physical characteristic that can be utilized to compensate for the unstable output of the core circuit 2.
Preferably, as shown in fig. 5, the temperature detection circuit 31 includes: a first mirror current branch 311 and a temperature control module 312 connected in series; and a selection module 313 connected in series between the output of the temperature control module 312 and the high order compensation circuit 32; the first mirror current branch 311 is configured to generate a second current having a magnitude consistent with that of the first current in the core circuit 2; the first current sequentially flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic inside the core circuit 2, so that the reference voltage output by the core circuit 2 is affected by temperature to be smaller than a second threshold value; the second threshold size is approximately: 10mV; in this embodiment, the first mirror current branch 311 includes: field effect transistors P10 and P11; since the two field-effect transistors P10 and P11 and the field-effect transistors P3 and P4 inside the core circuit 2 constitute a current mirror, when the mirror currents of the core circuits P3 and P4 change, the currents of the outputs of the field-effect transistors P10 and P11 also change similarly. If the field-effect transistors P10 and P11 and the field-effect transistors P3 and P4 are devices having the same physical characteristics, the current increases due to the temperature rise in the core circuit 2, and the current of the first mirror current branch 311 increases. The drain output of the field effect transistor P11 is connected to the ground through a first resistor R1, the source electrode of the field effect transistor P10 is connected to a power supply VDD, and the drain electrode of the field effect transistor P10 is connected with the source electrode of the field effect transistor P11; the gate of the fet P10 and the gate of the fet P11 are connected to the core circuit 2, respectively, and form a current mirror with the fets P3 and P4. The first components are field effect transistors P7 and P8 and have the characteristic of positive temperature of current; the second component is a resistor R4 and a bipolar transistor Q3 which are connected in series, and has the characteristic of negative temperature of current; the drain electrode of the field effect transistor P8 is connected with one end of the resistor R4; the resistor R4 is connected with the emitter of the bipolar transistor Q3; the base and collector of the bipolar transistor Q3 are grounded. Obviously, the first component and the second component through which the first current flows have different current temperature characteristics, so that the reference voltage Vref can output smaller voltage fluctuation in a larger temperature range.
The temperature control module 312: for outputting a temperature dependent control signal to the selection module 313 when the second current varies with temperature;
the selection module 313: for calculating and outputting a selection signal determining the type of current or voltage outputted from the higher order compensation circuit 32 to the higher order compensation circuit 32 according to the received control signal. When the temperature changes, the second current will follow the change, and the higher-order compensation circuit 32 is required to compensate for different types of voltages or currents to the core circuit 2. The selection module 313 selects a different compensation current or compensation voltage to the core circuit 2.
Preferably, as shown in fig. 5, the first mirror current branch 311 includes: at least one first semiconductor device having a current positive temperature characteristic or a current negative temperature characteristic; the current temperature characteristic of the first semiconductor device is kept consistent with the current temperature characteristic of the second semiconductor of the second mirror current branch 211 in the core circuit 2 through which the first current flows.
Preferably, as shown in fig. 5, the temperature control module 312 includes: the first resistor R1 and the switch module are connected in parallel; when the second current flowing through the first resistor R1 is smaller than or larger than the third threshold, the switching module outputs a different control signal to the selecting module 313. The magnitude of the third threshold needs to be determined according to the resistance value of the first resistor R1 of the actual circuit and the on voltage of the EB junction of the triode Q4. In this embodiment, the switching module determines whether the switching tube Q4 is turned on by comparing the voltage drop generated across the resistor R1 with the on threshold of the switching tube Q4. The first current is generated by a field effect transistor P11 with a current positive temperature characteristic and flows through a first resistor R1; the voltage of the first resistor R1 is applied between the base and the emitter of the transistor Q4. At low temperature, the voltage drop across the first resistor R1 is low, the BE junction of the transistor Q4 is high, the transistor Q4 is not conductive, and the collector of the transistor Q4 outputs a high level, i.e. the temperature control module 312 outputs a high level; at high temperature, the voltage drop across the first resistor R1 is large, the BE conduction voltage of the transistor Q4 is low, and the transistor Q4 is turned on, so that the collector of the transistor Q4 outputs a low level, i.e. the temperature control module 312 outputs a low level.
Preferably, as shown in fig. 5, the selecting module 313 includes: at least two inverters; any one of the at least two inverters selects the higher order compensation circuit 32 to output a compensation current or a compensation voltage according to a control signal output by the temperature control module 312. In this embodiment, the selection module 313 includes two inverters. When the temperature control module 312 outputs a low level, the first inverter INV1 outputs a high level, and the second inverter INV2 outputs a low level; when the temperature control module 312 outputs a high level, the first inverter INV1 outputs a low level, and the second inverter INV2 outputs a high level. Obviously, the higher-order compensation circuit 32 selects and outputs a current or voltage with different temperature characteristics according to different temperatures.
Preferably, as shown in fig. 5, the high-order compensation circuit 32 includes:
a third mirror current branch 321 for outputting a third current of positive temperature characteristic to the core circuit 2 in a case where the temperature detection circuit 31 is controlled to be turned on; the third current is consistent with the first current temperature coefficient inside the core circuit 2; the first current flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic inside the core circuit 2, so that the reference voltage output by the core circuit 2 is affected by temperature to be smaller than a second threshold value; the third mirror current branch 321 includes field effect transistors P12 and P13; the field effect transistors P12 and P13 and the field effect transistors P3 and P4 in the core circuit 2 form a current mirror. Then, when a current having a positive temperature characteristic is generated in the core circuit 2, the field effect transistors P12, P13, N5 also have the same effect, i.e., a third current having a temperature coefficient identical to that of the first current is output. The magnitude and temperature coefficient of the currents output by the field effect transistors P12 and P13 are the same as those of the field effect transistors P3 and P4 in the core circuit 2, but the magnitude of the third current Iptat is smaller than that of the first current output by the field effect transistors P3 and P4 due to the presence of the field effect transistor N5, but the temperature coefficient of the third current Iptat is identical to that of the first current.
If the first current increases, resulting in an increase in the voltage drop of the first resistor R1 in the temperature detection circuit 31, resulting in an on state of the transistor Q4, the first inverter INV1 outputs a high level, resulting in an on state of the field effect transistor N5, and the third mirrored current branch 321 is selected to output a third current having a positive temperature characteristic. The third current is output as a compensation current between the field effect transistor P8 and the resistor R4 in the core circuit 2, so that the problem of reference voltage drop output by the core circuit 2 due to temperature rise is solved; the third current increases the reference voltage output from the core circuit 2. At this time, the field effect transistor N6 is not turned on since the second inverter INV2 outputs a low level.
A negative temperature characteristic current source 322 for outputting a fourth current of a negative temperature characteristic to the core circuit 2 in a case where the temperature detection circuit 31 is controlled to be on;
the third current of the third mirror current branch 321 and the fourth current of the negative temperature characteristic current source 322 are controlled by the temperature detection circuit 31, and only one of them is outputted to the core circuit at the same time.
Preferably, as shown in fig. 5, the negative temperature characteristic current source 322 includes:
negative temperature characteristic reference current source 3221: for generating a fifth current having a negative temperature characteristic; the temperature coefficient of the fifth current is consistent with that of the fourth current;
first current mirror 3222: having a fourth mirror current branch and a fifth mirror current branch; the first current mirror 3222 is configured to take an output of the fourth mirror current branch as an output of the negative temperature characteristic current source; the fifth mirrored current branch is connected to the negative temperature characteristic reference current source 3221. In the present embodiment, the first galvanometer mirror 3222 includes field effect transistors P14 to P17, and N6. The field effect transistors P14 to P17 and N6 are devices that are not affected by temperature characteristics. The fourth mirror current branch is formed by field effect transistors P14 and P15, and the fifth mirror current branch is formed by field effect transistors P16 and P17. As described above, the fet N6 has the same function as the fet N5, and converts the current which is originally identical to the first current in the core circuit 2 in magnitude and temperature coefficient into the Intat which is identical to the first current only in temperature coefficient but is much smaller than the first current under the control of the temperature detection circuit 31.
Preferably, the negative temperature characteristic reference current source 3221 includes: a third semiconductor device having a negative voltage temperature characteristic, and a second resistor R2 connected in parallel to the third semiconductor device; the fifth current generated by the second resistor R2 is the reference current of the first current mirror 3222. In this embodiment, the third semiconductor device includes transistors Q5, Q6 that are affected by temperature. The transistors Q5 and Q6 are devices having negative current temperature characteristics; that is, the output current of the negative temperature characteristic reference current source 3221 decreases at the time of temperature rise. When the temperature drops, the field effect transistors P7 and P8 in the core circuit 2 are affected by the temperature, the output current is reduced, so that the output reference voltage Vref is also reduced, meanwhile, the first current flowing through the first resistor R1 is also reduced, so that the triode Q4 is not conducted, the collector of the triode Q4 outputs a high level, the second inverter INV2 also outputs a high level, so that the fourth mirror current branches P14 and P15 output the reference current of the negative temperature characteristic reference power supply 3221, and the reference voltage Vref is reduced due to the fact that the output currents of the field effect transistors P7 and P8 are reduced due to the temperature drop through the resistor R4 and the triode Q3 in the core circuit. Therefore, a certain critical temperature point exists between the conduction and the non-conduction of Q4, and the critical temperature point can be set in a reasonable temperature range by reasonably matching the currents of the field effect transistors P10 and P11 with the first resistor R1.
Preferably, the first semiconductor, the second semiconductor, or the third semiconductor is: a field effect transistor or a bipolar transistor. The negative temperature characteristic of the bipolar triode current is due to the negative temperature characteristic of the PN junction.
The foregoing description of the preferred embodiments of the application is not intended to limit the scope of the application in any way, including the abstract and drawings, in which case any feature disclosed in this specification (including abstract and drawings) may be replaced by alternative features serving the same, equivalent purpose, unless expressly stated otherwise. That is, each feature is one example only of a generic series of equivalent or similar features, unless expressly stated otherwise.
Claims (9)
1. A bandgap reference circuit, comprising: the starting circuit (1), the core circuit (2) and the compensation circuit (3) are connected in sequence;
the starting circuit (1) is used for starting the core circuit (2) to enter a stable working state when conducting electricity; and the feedback after the core circuit (2) enters a stable working state is utilized to close the output of the starting circuit (1);
the core circuit (2) is used for entering a stable working state according to the output of the starting circuit (1) and generating reference voltage output with low temperature drift;
the compensation circuit (3) is used for outputting compensation current or voltage to the core circuit (2) according to the detected current or voltage which is influenced by the temperature inside the core circuit (2), so that the reference voltage of the low temperature drift output by the core circuit (2) is influenced by the temperature to be smaller than a first threshold value; the compensation circuit (3) comprises: a temperature detection circuit (31) and a high-order compensation circuit (32) which are connected in sequence;
the temperature detection circuit (31) is used for determining the type of current or voltage required to be compensated by the output of the core circuit (2) according to the current or voltage influenced by the temperature inside the core circuit (2);
the high-order compensation circuit (32) is used for compensating the output current or voltage of the core circuit (2) according to the type of the current or voltage which is output by the temperature detection circuit (31) and needs to be compensated;
the high order compensation circuit (32) comprises: a third mirror current branch (321) for outputting a third current of positive temperature characteristic to the core circuit (2) in a case where the temperature detection circuit (31) is controlled to be on; the third current is consistent with the temperature coefficient of the first current in the core circuit (2); the first current flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic inside the core circuit (2), so that the reference voltage output by the core circuit (2) is affected by temperature to be smaller than a second threshold value;
a negative temperature characteristic current source (322) for outputting a fourth current of a negative temperature characteristic to the core circuit (2) in a case where the temperature detection circuit (31) is controlled to be on;
and under the control of the temperature detection circuit (31), the third current of the third mirror current branch (321) and the fourth current of the negative temperature characteristic current source (322) are output to the core circuit (2) at the same time.
2. The circuit according to claim 1, characterized in that the temperature detection circuit (31) comprises: a first mirror current branch (311) and a temperature control module (312) which are connected in series; and a selection module (313) connected in series between the output of the temperature control module (312) and the high-order compensation circuit (32);
-said first mirrored current branch (311) for generating a second current of a magnitude consistent with the first current inside the core circuit (2); the first current sequentially flows through a first component with positive temperature characteristic and a second component with negative temperature characteristic in the core circuit (2), so that the reference voltage output by the core circuit (2) is affected by temperature to be smaller than a second threshold value;
the temperature control module (312): for outputting a temperature dependent control signal to the selection module (313) when the second current varies with temperature;
-said selection module (313): for calculating and outputting a selection signal determining the type of current or voltage output by the high-order compensation circuit (32) to the high-order compensation circuit (32) based on the received control signal.
3. The circuit according to claim 2, characterized in that said first mirror current branch (311) comprises: at least one first semiconductor device having a current positive temperature characteristic or a current negative temperature characteristic; the current temperature characteristic of the first semiconductor device is consistent with the current temperature characteristic of a second semiconductor of a second mirror current branch in a core circuit (2) through which the first current flows.
4. The circuit of claim 2, wherein the temperature control module (312) comprises: the first resistor R1 and the switch module are connected in parallel; when the second current flowing through the first resistor R1 is smaller than or larger than a third threshold value, the switching module outputs different control signals to the selecting module (313).
5. The circuit according to claim 2, characterized in that said selection module (313) comprises: at least two inverters; any one of the at least two inverters selects the high-order compensation circuit (32) to output a compensation current or a compensation voltage according to a control signal output by the temperature control module (312).
6. The circuit according to claim 1, wherein the negative temperature characteristic current source (322) comprises:
negative temperature characteristic reference current source (3221): for generating a fifth current having a negative temperature characteristic; the magnitude of the fifth current is equal to the fourth current;
first current mirror (3222): having a fourth mirror current branch and a fifth mirror current branch; the first current mirror is used for taking the output of the fourth mirror current branch as the output of a negative temperature characteristic current source (322); the fifth mirrored current branch is connected to the negative temperature characteristic reference current source (3221).
7. The circuit according to claim 6, wherein the negative temperature characteristic reference current source (3221) comprises: a third semiconductor device having a negative voltage temperature characteristic, and a second resistor R2 connected in parallel to the third semiconductor device; the fifth current generated across the second resistor R2 is the reference current of the first current mirror (3222).
8. The circuit of claim 3, wherein the first semiconductor and the second semiconductor are: a field effect transistor or a bipolar transistor.
9. The circuit of claim 7, wherein the third semiconductor is: a field effect transistor or a bipolar transistor.
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| CN115617116B (en) * | 2022-12-19 | 2023-03-10 | 深圳市思远半导体有限公司 | Current source circuit, system, chip and electronic equipment |
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