CN102122191A - Current reference source circuit and method for generating current reference source - Google Patents
Current reference source circuit and method for generating current reference source Download PDFInfo
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- CN102122191A CN102122191A CN2011100072114A CN201110007211A CN102122191A CN 102122191 A CN102122191 A CN 102122191A CN 2011100072114 A CN2011100072114 A CN 2011100072114A CN 201110007211 A CN201110007211 A CN 201110007211A CN 102122191 A CN102122191 A CN 102122191A
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Abstract
The invention relates to an integrated circuit and discloses a current reference source circuit and a method for generating a current reference source. The method comprises the following steps of: generating a linear positive temperature coefficient current, a nonlinear negative temperature coefficient current and a nonlinear positive temperature coefficient current through three circuits respectively; superimposing the three currents; and taking the superimposed output currents as the current reference source. The linear positive temperature coefficient current is used for effectively offsetting linear components in the nonlinear negative temperature coefficient current, and the nonlinear positive temperature coefficient current is used for compensating residual nonlinear negative temperature coefficients, so that the sensitivity of the acquired currents to temperature changes is further reduced, and the current reference source which approximates to a zero temperature coefficient can be realized.
Description
Technical field
The present invention relates to integrated circuit, particularly the current reference source in the integrated circuit.
Background technology
The current reference source circuit has a wide range of applications in integrated circuit (IC) design, is one of modular circuit basic in the design of Analogous Integrated Electronic Circuits and hybrid digital-analog integrated circuit.The topmost application in mimic channel of current reference source circuit is to provide stable reference current for other circuit or system module.Therefore, the precision of the electric current of current reference source circuit generation and the performance that characteristic can directly have influence on other modular circuits in the circuit.
In order to obtain current with high accuracy reference source, existing high-performance current benchmark source generating circuit mainly is based on the reference voltage that voltage reference circuit produces a zero-temperature coefficient, utilize this reference voltage to produce a PVT (Process (process) then, supply-Voltage (service voltage), Temperature (temperature)) irrelevant reference current.
Existing a kind of current reference source circuit as shown in Figure 1, this circuit utilize that voltage reference circuit produces with temperature variation a little less than relevant reference voltage realize and the less reference current of temperature variation.
Yet, in side circuit, the single order reference voltage still has remaining nonlinear temperature coefficient, in a bigger temperature range, the temperature coefficient of single order reference voltage can directly influence the temperature coefficient of the reference current of its realization, and therefore, current reference is limited by the influence of reference voltage temperature coefficient, do not having under the high-order temperature compensated situation, its reference current temperature coefficient can not reach the demand of high-precision applications.
In addition, also have a kind of reference current of low-temperature coefficient at present, obtain the reference current of lower temperature coefficient in the circuit by the principle of Positive and Negative Coefficient Temperature compensation.
Yet if utilize the bipolarity triode to carry out high-order compensation, the use of this circuit will be subjected to the restriction of technology.Because traditional complementary metal oxide semiconductor (CMOS) (Complementary Metal-Oxide Semiconductor, be called for short " CMOS ") the PNP triode that provides of technology, its collector can only be received potential minimum, therefore, utilize BiCMOS technology to realize that this current reference source circuit can increase cost; Simultaneously, the triode temperature compensation structure is replaced with Metal-oxide-semicondutor (Metal-Oxide-Semiconductor, be called for short " MOS ") the pipe collocation structure, though with the CMOS process compatible,, metal-oxide-semiconductor is operated in subthreshold region in the compensating circuit, this just requires metal-oxide-semiconductor to have big area, but the subthreshold region temperature characterisitic of metal-oxide-semiconductor VGS can be changed by current affects two performance characteristics, therefore, this collocation structure has not only increased area, and its effect temperature compensation is also not ideal.
Summary of the invention
The object of the present invention is to provide a kind of current reference source circuit and current reference source generation method,, realize the current reference source of approximate zero temperature coefficient with comparatively simple structure.
For solving the problems of the technologies described above, embodiments of the present invention provide a kind of current reference source circuit, comprise:
The PTAT current occuring circuit is used to generate linear positive temperature coefficient (PTC) electric current;
The IPTAT current occuring circuit is used to generate nonlinear negative temperature parameter current;
Non-linear PTAT current occuring circuit is used to generate nonlinear positive temperature coefficient (PTC) electric current;
Supercircuit is used for the electric current that PTAT current occuring circuit, IPTAT current occuring circuit and non-linear PTAT current occuring circuit generate is respectively superposeed, with the stack after output current as current reference source.Wherein, PTAT is positive temperature coefficient (PTC) (Proportion To Absolute Temperature), and IPTAT is negative temperature coefficient (Inverse Proportion To Absolute Temperature).
Embodiments of the present invention also provide a kind of current reference source generation method, comprise following steps:
Generate linear positive temperature coefficient (PTC) electric current, nonlinear negative temperature parameter current and nonlinear positive temperature coefficient (PTC) electric current;
Positive temperature coefficient (PTC) electric current, nonlinear negative temperature parameter current, the nonlinear positive temperature coefficient (PTC) electric current of the linearity that generates are superposeed, and the electric current after will superposeing is as current reference source.
Embodiment of the present invention compared with prior art, the key distinction and effect thereof are:
Produce linear positive temperature coefficient (PTC) electric current respectively by three circuit, non-linear negative temperature parameter current, non-linear positive temperature coefficient (PTC) electric current, and these three electric currents are superposeed, with the output current after the stack as current reference source.Owing to utilized linear positive temperature coefficient (PTC) electric current that the linear component in the non-linear negative temperature parameter current is effectively offset, utilized non-linear positive temperature coefficient (PTC) electric current that remaining negative temperature coefficient is compensated.Therefore, the electric current that obtains further reduces the susceptibility of temperature variation, can realize the current reference source of approximate zero temperature coefficient.And control structure is simple, and compensation branch road stability is better, and less to the initial precision influence of reference current.Simulation result shows that behind non-linear temperature compensation, the temperature coefficient of current reference source is reduced to 10ppm/ ℃, and presents technology stability preferably.
Further, be used to generate the PTAT current occuring circuit of linear positive temperature coefficient (PTC) electric current, constitute by 4 triodes, a resistance, 4 NMOS pipes, 7 PMOS pipes; Be used to generate the IPTAT current occuring circuit of non-linear negative temperature parameter current, constitute by 4 PMOS pipes, 1 NMOS pipe, a resistance; Be used to generate the non-linear PTAT current occuring circuit of non-linear positive temperature coefficient (PTC) electric current, constitute by a triode, a resistance, 3 PMOS pipes.Owing to avoided the use of operational amplifier in the circuit structure of realization current reference source, singly do not reduced the complicacy of circuit design, help the lifting of the precision of reference current simultaneously.And, be used for non-linear PTAT current occuring circuit simple in structure, easy to control and integrate of nonlinear compensation.
Further, in the PTAT current occuring circuit, 2 triodes, a resistance, two NMOS pipes, 4 PMOS pipes constitute PTAT electric current core generation circuit, generate the positive temperature coefficient (PTC) electric current, remaining 2 triodes, 2 NMOS pipes, 3 PMOS pipes constitute the feedback bias loop, the feedback bias loop is used to PTAT electric current core generation circuit that bias voltage and electric current are provided, and constitutes feedback control loop with PTAT electric current core generation circuit.Because this feedback bias loop can provide stable dc point, therefore can guarantee the steady operation of circuit.
Description of drawings
Fig. 1 is the structural representation according to current reference source circuit of the prior art;
Fig. 2 is the structural representation according to the current reference source circuit of first embodiment of the invention;
Fig. 3 is the structural representation according to the current reference source circuit of second embodiment of the invention;
Fig. 4 is the temperature characterisitic synoptic diagram according to the current reference source in the second embodiment of the invention;
Fig. 5 is the current reference source generation method flow diagram according to third embodiment of the invention.
Embodiment
In the following description, in order to make the reader understand the application better many ins and outs have been proposed.But, persons of ordinary skill in the art may appreciate that even without these ins and outs with based on the many variations and the modification of following each embodiment, also can realize each claim of the application technical scheme required for protection.
For making the purpose, technical solutions and advantages of the present invention clearer, embodiments of the present invention are described in further detail below in conjunction with accompanying drawing.
Core of the present invention is, comprises in the current reference source circuit:
The PTAT current occuring circuit is used to generate linear positive temperature coefficient (PTC) electric current;
The IPTAT current occuring circuit is used to generate nonlinear negative temperature parameter current;
Non-linear PTAT current occuring circuit is used to generate nonlinear positive temperature coefficient (PTC) electric current;
Supercircuit is used for the electric current that this PTAT current occuring circuit, this IPTAT current occuring circuit and this non-linear PTAT current occuring circuit generate is respectively superposeed, with the stack after output current as current reference source.
First embodiment of the invention relates to a kind of current reference source circuit.In the present embodiment, positive temperature coefficient (PTC) (Proportion To Absolute Temperature with linearity, be called for short " PTAT ") electric current and nonlinear negative temperature coefficient (Inverse Proportion To Absolute Temperature, abbreviation " IPTAT ") the superimposed generation single order of electric current current reference source, utilizing PMOS pipe (P type metal-oxide-semiconductor) to produce non-linear positive temperature coefficient (PTC) electric current offsets the non-linear negative temperature coefficient of single order current reference source, thus, realize the reference current of approximate zero temperature coefficient.
The current reference source circuit of present embodiment comprises PTAT current occuring circuit 101, IPTAT current occuring circuit 102, non-linear PTAT current occuring circuit 103 and supercircuit 104 as shown in Figure 2.
Wherein, PTAT current occuring circuit 101 is used to generate linear positive temperature coefficient (PTC) electric current.Particularly, this PTAT current occuring circuit can be by utilizing the base-emitter voltage (V of two triodes
BE) difference Δ V
BE, generate linear PTAT electric current.
IPTAT current occuring circuit 102 is used to generate nonlinear negative temperature parameter current.Particularly, this IPTAT current occuring circuit can be by the base-emitter voltage V with triode
BEBy resistance, generate nonlinear IPTAT electric current.
Non-linear PTAT current occuring circuit 103 is used to generate nonlinear positive temperature coefficient (PTC) electric current.Particularly, this non-linear PTAT current occuring circuit can generate non-linear PTAT electric current by PMOS pipe.
Supercircuit is used for the electric current that PTAT current occuring circuit 101, IPTAT current occuring circuit 102 and non-linear PTAT current occuring circuit 103 generate is respectively superposeed, with the stack after output current as current reference source.
Because V
BETherefore have non-linear negative temperature coefficient feature, by non-linear PTAT current occuring circuit 103, generate nonlinear PTAT electric current, to based on V
BEThe nonlinear component that produces in the IPTAT electric current is offset, and these three kinds of electric currents is effectively superposeed just can realize producing the current reference source of zero-temperature coefficient.Its neutral line PTAT voltage will effectively be offset the linear component among the non-linear IPTAT, realize the reference current of single order temperature compensation.Because V
BENonlinear temperature, the IPTAT electric current of its generation still has the nonlinear temperature characteristic, therefore linear PTAT electric current can't be offset the negative temperature coefficient in the IPTAT reference current fully, so non-linear PTAT electric current compensates the remaining negative temperature coefficient in the single order reference current, make electric current further reduce, thereby obtain the reference current of approximate zero temperature coefficient the susceptibility of temperature variation.And control structure is simple, and compensation branch road stability is better, and less to the initial precision influence of reference current.
Second embodiment of the invention relates to a kind of current reference source circuit.Present embodiment has provided the specific implementation structure of PTAT current occuring circuit 101, IPTAT current occuring circuit 102, non-linear PTAT current occuring circuit 103 and supercircuit 104 on the basis of first embodiment.
As shown in Figure 3, PTAT current occuring circuit 101 is made of 4 triodes, resistance, 4 NMOS pipes (N type metal-oxide-semiconductor), 7 PMOS pipes.Wherein, 2 triodes, a resistance, two NMOS pipes, 4 PMOS pipes constitute PTAT electric current core generation circuit, generate the positive temperature coefficient (PTC) electric current, remaining 2 triodes, 2 NMOS pipes, 3 PMOS pipes constitute the feedback bias loop, the feedback bias loop is used to PTAT electric current core generation circuit that bias voltage and electric current are provided, and constitutes feedback control loop with PTAT electric current core generation circuit.
Specifically, 2 triodes that PTAT electric current core generation circuit comprises are Q1, Q2, and a resistance that comprises is R1, and two NMOS pipes that comprise are MN3, MN4,4 PMOS pipes that comprise are MP4～MP7, and 4 PMOS pipes constitute cascade Cascode current mirror.Wherein, Q1 is 1 with the ratio of the area of the emitter junction of Q2: N; MN3 and MN4 constitute current-mirror structure, and the source potential of two NMOS pipes is equated, realize the effect of similar amplifier, therefore produce Δ V on resistance R 1
BEPressure drop is because Δ V
BEBe directly proportional with absolute temperature, and linear change, so produce linear PTAT electric current in the PTAT electric current core generation circuit, this electric current transmits according to a certain percentage by PMOS Cascode current mirror.As shown in Figure 3, the base stage of Q1 links to each other with collector and is connected to circuit potential minimum GND, the base stage of Q2 links to each other with collector and is connected to circuit potential minimum GND, the emitter of Q1 links to each other with the source electrode of MN3, the grid of MN3 is connected to the grid of MN4, the drain electrode of MN3 is connected to the drain electrode of MP5, the emitter of Q2 links to each other with the end of R1, the other end of R1 links to each other with the source electrode of MN4, the drain electrode of MN4 links to each other with the grid of MN4, the source electrode of MP5 is connected to the drain electrode of MP4, and the source electrode of MP4 and MP6 all is connected to supply voltage, and the drain electrode of MP6 is connected to the source electrode of MP7.
2 triodes that the feedback bias loop comprises are Q4, Q5, and the NMOS pipe that comprises is MN1, MN2, and the PMOS that comprises pipe is MP1～MP3.The feedback bias loop provides bias voltage and electric current by the mode of automatic biasing for the PMOS Cascode current mirror in the circuit.Feed back bias loop and PTAT electric current core generation circuit simultaneously and constitute feedback control loop.Wherein, the base stage of Q4 links to each other with collector and is connected to circuit potential minimum GND, the base stage of Q5 links to each other with collector and is connected to circuit potential minimum GND, the grid of MN1 is connected to the grid of MN4, the source electrode of MN1 links to each other with the emitter of Q5, the drain electrode of MN1 is connected to grid and the drain electrode of MP1, the grid of MN2 links to each other with the drain electrode of MN3, the source electrode of MN2 links to each other with the Q4 emitter, the drain electrode of MN2 links to each other with the drain terminal of MP3, and the grid of MP1 links to each other with drain electrode, and the grid of MP1 is connected to the grid of MP5 and MP7, the source electrode of MP1 links to each other with supply voltage, the MP2 drain and gate links to each other with drain electrode with the source electrode of MP3 respectively, and the grid of MP2 is connected to the grid of MP4 and described MP6, and the source electrode of MP2 is connected to supply voltage, the grid of M P3 links to each other with the grid of MP1, and MN3 → MN1 → MP1 → MP7 → MN4 → MN3 is a regenerative feedback loop; MN3 → MN1 → MP1 → MP2 → MP6 → MN4 → MN3, these two loops of MN3 → MN2 → MP2 → MP6 → MN4 → MN3 are feedback loop.As long as make the feedback loop gain greater than the regenerative feedback loop gain, reference circuit just can steady operation.
As shown in Figure 3, IPTAT current occuring circuit 102 by 4 PMOS manage, 1 N metal-oxide-semiconductor, a resistance constitute.Wherein, 2 PMOS pipes, 1 NMOS pipe and a resistance constitute IPTAT electric current generation branch road, generate negative temperature parameter current, and remaining 2 PMOS pipe is formed the negative feedback mirror image branch, and negative feedback mirror image branch and IPTAT electric current generation branch road constitute feedback loop.
Specifically, 2 PMOS pipes that IPTAT electric current generation branch road comprises are MP8, MP9, and 1 the NMOS pipe that comprises is MN5, and a resistance that comprises is R2.PMOS pipe MP8, MP9 constitute the Cascode current mirror, PTAT current mirror in the PTAT current occuring circuit 101 is transferred among the NMOS pipe MN5, if the size of NMOS pipe MN5 is identical with NM3, the NM4 in the PTAT current occuring circuit 101, then the pressure drop on the resistance R 2 is V
EBThe pressure drop of knot, therefore the electric current V of generation negative temperature coefficient in resistance R 2
EB/ R
2, this electric current not only has the characteristic of IPTAT, and its negative temperature coefficient feature and V
EBJunction characteristic is identical, has non-linear.2 PMOS pipes that the negative feedback mirror image branch comprises are MP10, MP11, and its connection is similarly the Cascode current-mirror structure.As shown in Figure 3, one of R2 is connected to circuit potential minimum GND, the other end is connected to the drain electrode of source electrode and the MP11 of MN5, and the grid of MN5 links to each other with the grid of MN4, and the drain electrode of MN5 links to each other with the grid of the drain electrode of MP9 and MP10, the grid of MP9 links to each other with the grid of MP7, the source electrode of MP9 links to each other with the drain electrode of MP8, and the grid of MP8 links to each other with the grid of MP6, and the source electrode of MP8 and the source electrode of MP10 all are connected to supply voltage, the drain electrode of MP10 is connected to the source electrode of MP11, and the grid of MP11 is connected to the grid of M P9.
This negative feedback mirror image branch and IPTAT electric current generation branch road constitute feedback loop, make this feedback loop possess two effects: the one, stablize NMOS pipe MN5 drain-source voltage, thereby the R2 both end voltage is remained unchanged, simultaneously because the electric current among the MN5 has the PTAT characteristic, therefore, the electric current that injects R2 in the negative feedback branch road necessarily has negative temperature coefficient feature, and its temperature characterisitic and V
BEHas similarity; The 2nd, because PMOS pipe MP10, MP11 constitute the cascode current mirror, the non-linear IPTAT electric current that flows through wherein can transmit in proportion by current mirror.
As shown in Figure 3, non-linear PTAT current occuring circuit 103 is made of a triode, a resistance, 3 PMOS pipes.Wherein, a triode, a resistance, 2 PMOS pipes constitute reference voltage generation branch road, generate nonlinear positive temperature coefficient (PTC) electric current by remaining PMOS pipe.
Specifically, the triode that reference voltage generation branch road comprises is Q3, and a resistance that comprises is R3, and 2 PMOS pipes that comprise are MP12, MP13, and MP12, MP13 constitutes the PMOSCascode current mirror.Triode Q3 is connected to diode B-C knot short circuit and is the diode connected mode, produces a voltage V with negative temperature coefficient
EB, transmission is converted into the PTAT voltage with positive temperature coefficient (PTC) from the PTAT electric current that PTAT electric current core generation circuit produces in resistance R 3 in the PMOS Cascode current mirror, so the V of this voltage and IPTAT characteristic
EBThe reference voltage of superimposed generation lower temperature coefficient, Vref; Non-linear PTAT electric current is to produce by PMOS pipe MPC, when the gate source voltage of MPC during less than its threshold voltage, the MPC conducting, and produce a non-linear PTAT electric current, because can further the remaining non-linear negative temperature coefficient of single order reference current further being offset of this non-linear current, this non-linear current directly be injected into summing point in the electric current supercircuit 104 *, obtain the reference current of ultralow temperature coefficient by the transmission of current mirror mirror image.As shown in Figure 3, the base stage of Q3 links to each other with collector and is connected to circuit potential minimum GND, the emitter of Q3 links to each other with the end of the grid of MPC and R3, the other end of R3 links to each other with the drain electrode of the drain electrode of MP13 and MPC, the grid of MP13 links to each other with the grid of MP11, the source electrode of MP13 links to each other with the drain electrode of MP12, and the grid of MP12 links to each other with the grid of MP8, and the source electrode of MP12 is connected to supply voltage.
As shown in Figure 3, supercircuit 104 is made of 4 PMOS pipes and 1 NMOS pipe.Specifically, supercircuit 104 is made of PMOS pipe MP14～MP17 and NMOS pipe MN6.Wherein MP14 and MP15 are the Cascode current-mirror structure, the transmission of this Cascode current mirror be linear PTAT electric current in the PTAT current occuring circuit 101; The Cascode structural transmission that MP16 and MP17 constitute be the non-linear IPTAT electric current that is produced in the IPTAT current occuring circuit.The electric current that these two kinds of temperatures coefficient are opposite superposes at the nodes X place jointly with the non-linear PTAT electric current that is produced by non-linear PTAT current occuring circuit 103 that injects nodes X, produce the reference current of an approximate zero temperature coefficient, this electric current is by NMOS current mirror mirror image or transmission in proportion.Wherein, the source electrode of MP14 and MP16 all is connected to supply voltage, the grid of MP14 is connected to the grid of MP12, the drain electrode of MP14 is connected to the source electrode of MP15, the grid of MP15 is connected to the grid of MP13, the drain electrode of MP15 is connected to the drain electrode of MN6, the source electrode of MN6 is connected to circuit potential minimum GND, the grid of MN6 and the drain electrode that drains and link to each other and be connected to MP17, electric current after the stack is by the grid output of MN6, the grid of MP17 links to each other with the grid of MP15, and the source electrode of MP17 is connected to the drain electrode of MP16, and the grid of MP16 is connected to the drain electrode of described MN5.
The ratio of supposing the emitter junction area of Q1 and Q2 is 1: N, and the linear PTAT electric current that PTAT current occuring circuit 101 generates is:
V wherein
T=KT/q is a thermal voltage, and K is a Boltzmann constant, and T is an absolute temperature, and q is an electronic charge; M is resistance ratio R
3/ R
1The IPTAT electric current is simultaneously:
V in the formula
G0Be the band gap voltage of silicon materials under the 0K, representative value is 1.205V, normal temperature T
0=300K, γ, α are respectively the coefficient relevant with collector current index temperature coefficient with triode base hole mobility.
As seen the IPTAT electric current has the non-linear negative temperature coefficient (V of γ-α)
TLnN.Need carry out the nonlinear temperature compensating coefficient to it.
Because the gate source voltage of PMOS pipe MPC equals the PTAT voltage of single order reference voltage, therefore
β in the formula
MPCAnd V
THPBe respectively gain factor and the threshold voltage of PMOS pipe MPC, wherein β=μ C
OxW/L, V
THP＜0.With (2) formula as can be known to temperature differentiate (temperature coefficient of ignoring gain factor):
(4)
In the following formula because mV
TInN+V
THP＞0, and mV
TInN/T＞0 is because PMOS pipe threshold voltage is so that negative temperature coefficient is TC
VTHP＜0, so TC
VTHPV
THP＞0.So I
NL_PTATCurrent temperature coefficient TC
INL_PTAT＞0,, promptly have ptc characteristics.
By above analysis as can be known, nonlinear temperature coefficient in the IPTAT electric current can compensate by above-mentioned non-linear positive temperature coefficient (PTC) electric current, as long as in middle high-temperature region control PMOS pipe beginning conducting, inject non-linear PTAT electric current, make the high-order negative temperature coefficient of I PTAT electric current obtain bigger decay, thus the temperature coefficient less current reference source that obtains.The temperature characterisitic of the current reference source that obtains according to present embodiment as shown in Figure 4.
Simulation result shows that behind non-linear temperature compensation, the temperature coefficient of current reference source is reduced to 10ppm/ ℃, and presents technology stability preferably.
And, owing to avoided the use of operational amplifier in the circuit structure of realization current reference source, singly do not reduced the complicacy of circuit design, easy to control and integrate, help the lifting of the precision of reference current simultaneously.
What deserves to be mentioned is that the substrate except PMOS pipe MPC in the circuit structure diagram can be connected with supply voltage and can also link to each other with himself source electrode, the substrate of all NMOS pipes all is connected to potential minimum GND in the circuit; Simultaneously, the place inserts a resistance in the injection nodes X, can also realize the reference voltage of ultralow temperature coefficient.
Need to prove, present embodiment is a kind of concrete implementation, in actual applications, PTAT current occuring circuit 101, IPTAT current occuring circuit 102, non-linear PTAT current occuring circuit 103 and supercircuit 104 can also be other implementation structures.Such as the triode Q1 to Q5 that is comprised in each circuit can replace with the metal-oxide-semiconductor of working group's subthreshold region, realizes with full metal-oxide-semiconductor.
Third embodiment of the invention relates to a kind of current reference source generation method.Fig. 5 is the process flow diagram of this current reference source generation method.
In step 510, generate linear positive temperature coefficient (PTC) electric current.Specifically, it is poor to utilize the base-emitter voltage difference of two triodes or be operated in the gate source voltage of subthreshold region metal-oxide-semiconductor altogether, generates linear positive temperature coefficient (PTC) electric current.
In step 520, generate nonlinear negative temperature parameter current.Specifically, can utilize the base-emitter voltage of triode or be operated in subthreshold region metal-oxide-semiconductor gate source voltage, generate nonlinear negative temperature parameter current.
In step 530, generate nonlinear positive temperature coefficient (PTC) electric current.Specifically, can utilize a PMOS pipe to generate nonlinear positive temperature coefficient (PTC) electric current.
Step 510,520 and 530 separate execution there is no clear and definite precedence relationship each other.
After generating linear positive temperature coefficient (PTC) electric current, nonlinear negative temperature parameter current and nonlinear positive temperature coefficient (PTC) electric current, enter step 540.
In step 540, positive temperature coefficient (PTC) electric current, nonlinear negative temperature parameter current, the nonlinear positive temperature coefficient (PTC) electric current of the linearity that generates superposeed, and the electric current after will superposeing is as current reference source.
Be not difficult to find that present embodiment is and the corresponding method embodiment of first embodiment, present embodiment can with the enforcement of working in coordination of first embodiment.The correlation technique details of mentioning in first embodiment is still effective in the present embodiment, in order to reduce repetition, repeats no more here.Correspondingly, the correlation technique details of mentioning in the present embodiment also can be applicable in first embodiment.
Present embodiment all can realize in modes such as software, hardware, firmwares.No matter the present invention be with software, hardware, or the firmware mode realize, instruction code can be stored in the storer of computer-accessible of any kind (for example permanent or revisable, volatibility or non-volatile, solid-state or non-solid-state, fixing or removable medium or the like).Equally, storer can for example be programmable logic array (Programmable Array Logic, be called for short " PAL "), random access memory (Random Access Memory, be called for short " RAM "), programmable read only memory (Programmable Read Only Memory, be called for short " PROM "), ROM (read-only memory) (Read-Only Memory, be called for short " ROM "), Electrically Erasable Read Only Memory (Electrically Erasable Programmable ROM, be called for short " EEPROM "), disk, CD, digital versatile disc (Digital Versatile Disc is called for short " DVD ") or the like.
In embodiments of the present invention, owing to utilized linear positive temperature coefficient (PTC) electric current that the linear component in the non-linear negative temperature parameter current is effectively offset, utilized non-linear positive temperature coefficient (PTC) electric current that remaining negative temperature coefficient is compensated.Therefore, the electric current that obtains further reduces the susceptibility of temperature variation, can realize the current reference source of approximate zero temperature coefficient.And control structure is simple, and compensation branch road stability is better, and less to the initial precision influence of reference current.Simulation result shows that behind non-linear temperature compensation, the temperature coefficient of current reference source is reduced to 10ppm/ ℃, and presents technology stability preferably.
In addition, avoid the use of operational amplifier in the circuit structure of realization current reference source, singly do not reduced the complicacy of circuit design, helped the lifting of the precision of reference current simultaneously.And, be used for non-linear PTAT current occuring circuit simple in structure, easy to control and integrate of nonlinear compensation.
In addition, the feedback bias loop in the PTAT current occuring circuit can provide stable dc point, therefore can guarantee the steady operation of circuit.
Though pass through with reference to some of the preferred embodiment of the invention, the present invention is illustrated and describes, but those of ordinary skill in the art should be understood that and can do various changes to it in the form and details, and without departing from the spirit and scope of the present invention.
Claims (13)
1. a current reference source circuit is characterized in that, comprises:
The PTAT current occuring circuit is used to generate linear positive temperature coefficient (PTC) electric current;
The IPTAT current occuring circuit is used to generate nonlinear negative temperature parameter current;
Non-linear PTAT current occuring circuit is used to generate nonlinear positive temperature coefficient (PTC) electric current;
Supercircuit is used for the electric current that described PTAT current occuring circuit, described IPTAT current occuring circuit and described non-linear PTAT current occuring circuit generate is respectively superposeed, with the stack after output current as current reference source.
2. current reference source circuit according to claim 1 is characterized in that, described PTAT current occuring circuit comprises PTAT electric current core generation circuit and feedback bias loop;
Wherein, described PTAT electric current core generation circuit is used to generate the positive temperature coefficient (PTC) electric current of described linearity, described feedback bias loop is used to described PTAT electric current core generation circuit that bias voltage and electric current are provided, and constitutes feedback control loop with described PTAT electric current core generation circuit.
3. current reference source circuit according to claim 2, it is characterized in that, described PTAT electric current core generation circuit is made of 2 triode Q1, Q2,1,2 NMOS pipes of 1 resistance R MN3, MN4,4 PMOS pipe MP4, MP5, MP6, MP7, and Q1 is 1 with the ratio of the area of the emitter junction of Q2: N; Two NMOS pipes constitute current-mirror structure; 4 PMOS pipes constitute cascade Cascode current mirror;
Wherein, the base stage of Q1 links to each other with collector and is connected to circuit potential minimum GND, the base stage of Q2 links to each other with collector and is connected to circuit potential minimum GND, the emitter of Q1 links to each other with the source electrode of MN3, the grid of MN3 is connected to the grid of MN4, the drain electrode of MN3 is connected to the drain electrode of MP5, the emitter of Q2 links to each other with the end of R1, the other end of R1 links to each other with the source electrode of MN4, the drain electrode of MN4 links to each other with the grid of MN4, the source electrode of MP5 is connected to the drain electrode of MP4, and the source electrode of MP4 and MP6 all is connected to supply voltage, and the drain electrode of MP6 is connected to the source electrode of MP7;
Described feedback bias loop is made of 2 triode Q4, Q5,2 N metal-oxide-semiconductor MN1, MN2,3 PMOS pipe MP1, MP2, MP3;
Wherein, the base stage of Q4 links to each other with collector and is connected to circuit potential minimum GND, the base stage of Q5 links to each other with collector and is connected to circuit potential minimum GND, the grid of MN1 is connected to the grid of described MN4, the source electrode of MN1 links to each other with the emitter of Q5, the drain electrode of MN1 is connected to grid and the drain electrode of MP1, the grid of MN2 links to each other with the drain electrode of described MN3, the source electrode of MN2 links to each other with the Q4 emitter, the drain electrode of MN2 links to each other with the drain terminal of MP3, the grid of MP1 links to each other with drain electrode, and the grid of MP1 is connected to the grid of described MP5 and described MP7, and the source electrode of MP1 links to each other with supply voltage, the MP2 drain and gate links to each other with drain electrode with the source electrode of MP3 respectively, and the grid of MP2 is connected to the grid of described MP4 and described MP6, and the source electrode of MP2 is connected to supply voltage, and the grid of MP3 links to each other with the grid of MP1.
4. current reference source circuit according to claim 3 is characterized in that, described IPTAT current occuring circuit comprises IPTAT electric current generation branch road and negative feedback mirror image branch;
Wherein, the base-emitter voltage that described IPTAT electric current generation branch road is used to utilize triode generates described nonlinear negative temperature parameter current by resistance; Described negative feedback mirror image branch and described IPTAT electric current generation branch road constitute feedback loop.
5. current reference source circuit according to claim 4 is characterized in that, described IPTAT electric current 2 PMOS pipes of a route MP8, MP9,1 NMOS pipe MN5 and 1 resistance R 2 takes place constitutes; Described negative feedback mirror image branch is by 2 PMOS pipe MP10, and MP11 forms;
In described IPTAT electric current generation branch road, 2 PMOS pipes constitute the Cascode current-mirror structure, are used for the positive temperature coefficient (PTC) electric current with the linearity of described PTAT current occuring circuit generation, are transferred to the NMOS pipe in the described IPTAT electric current generation branch road;
Wherein, one of R2 is connected to circuit potential minimum GND, the other end is connected to the drain electrode of source electrode and the MP11 of MN5, the grid of MN5 links to each other with the grid of described MN4, the drain electrode of MN5 links to each other with the grid of the drain electrode of MP9 and MP10, the grid of MP9 links to each other with the grid of described MP7, the source electrode of MP9 links to each other with the drain electrode of MP8, the grid of MP8 links to each other with the grid of described MP6, the source electrode of MP8 and the source electrode of MP10 all are connected to supply voltage, the drain electrode of MP10 is connected to the source electrode of MP11, and the grid of MP11 is connected to the grid of MP9.
6. current reference source circuit according to claim 5 is characterized in that, described non-linear PTAT current occuring circuit comprises reference voltage generation branch road and is used to generate the PMOS pipe of described nonlinear positive temperature coefficient (PTC) electric current.
7. current reference source circuit according to claim 6 is characterized in that, comprise in the described reference voltage generation branch road 1 be connected to diode B-C knot short circuit be the diode connected mode triode, constitute 2 PMOS pipes of Cascode current-mirror structure; 2 PMOS pipes in the described reference voltage generation branch road are used to transmit the positive temperature coefficient (PTC) electric current of the linearity that described PTAT current occuring circuit generates.
8. current reference source circuit according to claim 7 is characterized in that, 1 triode Q3 of route, 3,2 PMOS pipes of 1 resistance R MP12 take place described reference voltage, and MP13 constitutes; Described nonlinear positive temperature coefficient (PTC) electric current generates by PMOS pipe MPC;
Wherein, the base stage of Q3 links to each other with collector and is connected to circuit potential minimum GND, the emitter of Q3 links to each other with the end of the grid of MPC and R3, the other end of R3 links to each other with the drain electrode of the drain electrode of MP13 and MPC, the grid of MP13 links to each other with the grid of described MP11, the source electrode of MP13 links to each other with the drain electrode of MP12, and the grid of MP12 links to each other with the grid of described MP8, and the source electrode of MP12 is connected to supply voltage.
9. according to each described current reference source circuit in the claim 1 to 8, it is characterized in that described supercircuit is made of 4 PMOS pipes MP14, MP15, MP16, MP17 and 1 NMOS pipe MN6; MP14 and MP15 constitute the Cascode current-mirror structure, are used to transmit the positive temperature coefficient (PTC) electric current of the linearity that described PTAT current occuring circuit generates; MP16 and MP17 constitute the Cascode current-mirror structure, are used to transmit the nonlinear negative temperature parameter current that described IPTAT current occuring circuit generates;
The nonlinear positive temperature coefficient (PTC) electric current that the non-linear PTAT current occuring circuit at the negative temperature parameter current of the positive temperature coefficient (PTC) electric current of described transmission, described transmission and injection node place generates, in the stack of described injection node place, the electric current after the stack is by NMOS pipe M N6 output;
Wherein, the source electrode of MP14 and MP16 all is connected to supply voltage, the grid of MP14 is connected to the grid of described MP12, the drain electrode of MP14 is connected to the source electrode of MP15, the grid of MP15 is connected to the grid of MP13, the drain electrode of MP15 is connected to the drain electrode of MN6, the source electrode of MN6 is connected to circuit potential minimum GND, the grid of MN6 and the drain electrode that drains and link to each other and be connected to MP17, electric current after the described stack is by the grid output of MN6, the grid of MP17 links to each other with the grid of MP15, and the source electrode of MP17 is connected to the drain electrode of MP16, and the grid of MP16 is connected to the drain electrode of described MN5.
10. a current reference source generation method is characterized in that, comprises following steps:
Generate linear positive temperature coefficient (PTC) electric current, nonlinear negative temperature parameter current and nonlinear positive temperature coefficient (PTC) electric current;
Positive temperature coefficient (PTC) electric current, described nonlinear negative temperature parameter current, the described nonlinear positive temperature coefficient (PTC) electric current of the described linearity that generates are superposeed, and the electric current after will superposeing is as current reference source.
11. current reference source generation method according to claim 10 is characterized in that, in the step of the linear positive temperature coefficient (PTC) electric current of described generation, comprises following substep:
Utilize the base-emitter voltage difference of two triodes, generate the positive temperature coefficient (PTC) electric current of described linearity.
12. current reference source generation method according to claim 10 is characterized in that, in the step of the nonlinear negative temperature parameter current of described generation, comprises following substep:
The base-emitter voltage that utilizes triode generates described nonlinear negative temperature parameter current by resistance.
13. current reference source generation method according to claim 10 is characterized in that, in the step of the nonlinear positive temperature coefficient (PTC) electric current of described generation, comprises following substep:
Utilize a PMOS pipe to generate described nonlinear positive temperature coefficient (PTC) electric current.
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| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN102622032A (en) * | 2012-04-17 | 2012-08-01 | 钜泉光电科技(上海)股份有限公司 | Low temperature coefficient bandgap voltage reference circuit |
| CN103729010A (en) * | 2012-10-15 | 2014-04-16 | 上海聚纳科电子有限公司 | High-precision band-gap reference source circuit |
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| CN104238617A (en) * | 2013-06-20 | 2014-12-24 | 中国科学院声学研究所 | Current-mode band-gap reference source |
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| CN105739596A (en) * | 2016-03-04 | 2016-07-06 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | High-precision reference voltage source circuit applying secondary positive temperature coefficient compensation |
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| CN110647206A (en) * | 2018-06-27 | 2020-01-03 | 重庆湃芯入微科技有限公司 | Band-gap reference voltage source for improving fluctuation upper limit of power supply voltage |
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| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
| CN102622032A (en) * | 2012-04-17 | 2012-08-01 | 钜泉光电科技(上海)股份有限公司 | Low temperature coefficient bandgap voltage reference circuit |
| CN102622032B (en) * | 2012-04-17 | 2014-04-02 | 钜泉光电科技(上海)股份有限公司 | Low temperature coefficient bandgap voltage reference circuit |
| CN103729010A (en) * | 2012-10-15 | 2014-04-16 | 上海聚纳科电子有限公司 | High-precision band-gap reference source circuit |
| CN103729010B (en) * | 2012-10-15 | 2015-04-29 | 上海聚纳科电子有限公司 | High-precision band-gap reference source circuit |
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| CN105119980A (en) * | 2015-07-23 | 2015-12-02 | 柳州一合科技有限公司 | Synchronization method of multichannel signals |
| CN105739596A (en) * | 2016-03-04 | 2016-07-06 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | High-precision reference voltage source circuit applying secondary positive temperature coefficient compensation |
| CN110647206A (en) * | 2018-06-27 | 2020-01-03 | 重庆湃芯入微科技有限公司 | Band-gap reference voltage source for improving fluctuation upper limit of power supply voltage |
| CN109976425A (en) * | 2019-04-25 | 2019-07-05 | 湖南品腾电子科技有限公司 | A kind of low-temperature coefficient reference source circuit |
| CN111522381A (en) * | 2020-04-15 | 2020-08-11 | 南京微盟电子有限公司 | Temperature coefficient adjustable current reference circuit and method |
| CN111522381B (en) * | 2020-04-15 | 2022-04-08 | 南京微盟电子有限公司 | Temperature coefficient adjustable current reference circuit and method |
| CN111897209A (en) * | 2020-05-19 | 2020-11-06 | 成都天锐星通科技有限公司 | Millimeter wave chip gain high-low temperature self-adaptive bias structure and method |
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| CN114115423A (en) * | 2021-12-17 | 2022-03-01 | 贵州振华风光半导体股份有限公司 | Band-gap reference current source circuit with digital control |
| CN114115423B (en) * | 2021-12-17 | 2022-12-20 | 贵州振华风光半导体股份有限公司 | Band-gap reference current source circuit with digital control |
| CN115145346A (en) * | 2022-08-02 | 2022-10-04 | 深圳市诚芯微科技股份有限公司 | Band gap reference circuit |
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