CN102622032B - Low temperature coefficient bandgap voltage reference circuit - Google Patents
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Abstract
The invention relates to the field of design of an integrated circuit and discloses a low temperature coefficient bandgap voltage reference circuit. In the circuit, a temperature compensation circuit is introduced to perform feedback correction on a temperature coefficient of output reference voltage based on the traditional current mode bandgap reference circuit structure, and due to a nonlinear temperature coefficient compensation mode, the temperature coefficient of the output reference voltage can be greatly reduced, and the reference circuit has high compensation stability and slight influence on initial accuracy of the preference voltage. By a nonlinear temperature sensing unit, the base-emitter (BE) junction voltage of a crystal triode is subjected to temperature detection, and a nonlinear current is generated and is superposed with two circuits with opposite temperature coefficients in the reference circuit, so that zero temperature coefficient reference voltage which is hardly related to the temperature is generated.
Description
Technical field
The present invention relates to integrated circuit (IC) design field, particularly there is the low temperature coefficient with gap voltage reference source circuit of temperature compensation.
Background technology
At the bottom of semi-conductive conduction band, be band gap (Bandgap) with the difference of top of valence band, bandgap reference voltage (Bandgap voltage reference) utilizes the voltage being directly proportional to temperature and diode drop sum, the two temperature coefficient is cancelled out each other, and realizes temperature independent voltage reference.Because the band gap voltage of this reference voltage and silicon is similar, thereby be called band-gap reference.
Bandgap voltage reference circuit is widely used in Analogous Integrated Electronic Circuits, and its Main Function is for other unit of system provides stable reference voltage or electric current, especially, in precision circuit system, to band-gap reference circuit temperature coefficient, requires more harsh.
Traditional bandgap voltage reference circuit is based on two transistor base-emitter voltage difference delta V
bEproduce positive temperature coefficient (PTC) voltage and transistor base stage and emitter both end voltage V
bEthe principle of negative temperature coefficient linear superposition.Yet, because the nonlinear characteristic of negative temperature voltage has restricted its application of traditional band-gap reference circuit in high-precision temperature coefficient.Therefore the band-gap reference circuit that adopts high-order temperature compensated technology to realize low-temperature coefficient has a wide range of applications in high-performance hybrid digital-analog integrated circuit.High-order temperature compensated is generally to utilize extra high-order compensation circuit to produce the reference circuit that non-linear positive temperature coefficient (PTC) voltage and single order reference voltage superpose to realize low-temperature coefficient.
At publication number, it is C N1987713A (application number: described in patent documentation 200510120849.3) in scheme, utilize Metal-oxide-semicondutor (Metal-Oxide-Semiconductor, abbreviation " MOS ") pipe drain current becomes square law relation with grid voltage, produce second order offset current and export the synthetic branch road of reference voltage to and convert second order bucking voltage to, thereby the temperature coefficient of compensation single order reference voltage, the reference voltage of generation lower temperature coefficient.The scheme that this invention is announced, although can realize the compensation of second order reference voltage, because the threshold voltage of metal-oxide-semiconductor raises and reduces with temperature, is therefore used same Δ V generation circuit can not reach desirable compensation effect in high-temperature region and low-temperature space.Meanwhile, because PN P base current bucking circuit has larger difference in reality realizes, therefore, the initial precision of this scheme reference voltage is subject to having a strong impact on of temperature-compensation circuit, and compensation precision also can reduce simultaneously.
Publication number CN 102171818A (application number: scheme described in patent documentation 201110040925.5), it is in the angle of system, Vref is sampled, then by the adjusting of resistance being carried out to correction reference voltage variation with temperature amount, with this, in whole temperature range, obtain almost the bandgap voltage reference irrelevant with temperature variation.Yet the independence of reference voltage and temperature directly depends on the complexity of circuit, sample circuit quantity number, therefore, under limited complexity condition, obtain extremely low temperature coefficient comparatively difficulty.
Summary of the invention
The object of the present invention is to provide a kind of low temperature coefficient with gap voltage reference circuit, can greatly reduce output reference voltage temperature coefficient, there is higher compensation stability, and less to the initial Accuracy of reference voltage.
For solving the problems of the technologies described above, embodiments of the present invention disclose a kind of low temperature coefficient with gap voltage reference circuit, comprising: the first current source, the second current source, resistance R 2, resistance R 3 and nonlinear temperature sensing unit;
The electric current of the first current source output is directly proportional to absolute temperature; Electric current and the absolute temperature of the second current source output are inversely proportional to;
One end of the first current source is connected with power supply, and the other end is connected with output port;
The second current source and the first current source are connected in parallel;
One end of resistance R 2 is connected with the inverting input of nonlinear temperature sensing unit, other end ground connection;
One end of resistance R 3 is connected with output port, and the other end is connected with the inverting input of nonlinear temperature sensing unit;
The in-phase input end of nonlinear temperature sensing unit is connected with transistor base-emitter both end voltage, and output terminal is connected with output port.
Compared with prior art, the key distinction and effect thereof are embodiment of the present invention:
Based on conventional current mould band-gap reference circuit structure, introduce temperature sensor compensating circuit the temperature coefficient of output reference voltage is carried out to feedback compensation, by nonlinear temperature compensating coefficient mode, can greatly reduce output reference voltage temperature coefficient, there is higher compensation stability, and less to the initial Accuracy of reference voltage.
Further, nonlinear temperature sensing unit, by transistor BE junction voltage is carried out to temperature detection, then produces a non-linear current, the circuit contrary with two kinds of temperatures coefficient in reference circuit superposes, thereby produces and temperature irrelevant zero-temperature coefficient reference voltage almost.
Its equal and opposite in direction further, in reference circuit, there are two kinds of electric currents that temperature coefficient is contrary, if can produce zero-temperature coefficient reference current simultaneously.
Further, reference circuit uses CMOS technique to realize, and can more effectively reduce costs.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of low temperature coefficient with gap voltage reference circuit in first embodiment of the invention;
Fig. 2 is the structural representation of a kind of low temperature coefficient with gap voltage reference circuit in second embodiment of the invention;
Fig. 3 is the structural representation of a kind of low temperature coefficient with gap voltage reference circuit in third embodiment of the invention;
Fig. 4 is the structural representation of a kind of low temperature coefficient with gap voltage reference circuit in four embodiment of the invention;
Fig. 5 is a kind of nonlinear temperature compensating coefficient principle schematic in four embodiment of the invention;
Fig. 6 is the structural representation of a kind of low temperature coefficient with gap voltage reference circuit in fifth embodiment of the invention;
Fig. 7 is the reference voltage temperature curve of a kind of low temperature coefficient with gap voltage reference circuit output in fifth embodiment of the invention.
Embodiment
In the following description, in order to make reader understand the application better, many ins and outs have been proposed.But, persons of ordinary skill in the art may appreciate that even without these ins and outs and the many variations based on following embodiment and modification, also can realize each claim of the application technical scheme required for protection.
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiments of the present invention are described in further detail.
First embodiment of the invention relates to a kind of low temperature coefficient with gap voltage reference circuit.Fig. 1 is the structural representation of this low temperature coefficient with gap voltage reference circuit.
At the bottom of semi-conductive conduction band, be band gap (Bandgap) with the difference of top of valence band, bandgap reference voltage (Bandgap voltage reference) utilizes the voltage being directly proportional to temperature and diode drop sum, the two temperature coefficient is cancelled out each other, and realizes temperature independent voltage reference.Because the band gap voltage of its reference voltage and silicon is similar, thereby be called band-gap reference.
Specifically, as shown in Figure 1, this low temperature coefficient with gap voltage reference circuit comprises: the first current source I
pTAT, the second current source I
iPTAT, resistance R 2, resistance R 3 and nonlinear temperature sensing unit TCC.
The first current source I
pTATthe electric current of output is directly proportional to absolute temperature.The second current source I
iPTATelectric current and the absolute temperature of output are inversely proportional to.
The first current source I
pTATone end be connected with power vd D, the other end is connected with output port Vref.
The second current source I
iPTATwith the first current source I
pTATbe connected in parallel.
One end of resistance R 2 is connected with the inverting input of nonlinear temperature sensing unit TCC, other end ground connection.
One end of resistance R 3 is connected with output port Vref, and the other end is connected with the inverting input of nonlinear temperature sensing unit TCC.
The in-phase input end of nonlinear temperature sensing unit TCC and transistor base-emitter both end voltage V
bE(T) connect, output terminal is connected with output port Vref.
Nonlinear temperature sensing unit TCC, by transistor BE junction voltage (base-emitter both end voltage) is carried out to temperature detection, then produces a non-linear current I
nL, this electric current and linear current I
pTATwith non-linear current I
iPTATsuperpose, thereby produce and temperature irrelevant zero-temperature coefficient reference voltage almost.
Based on conventional current mould band-gap reference circuit structure, introduce temperature-compensation circuit the temperature coefficient of output reference voltage is carried out to feedback compensation, by nonlinear temperature compensating coefficient mode, can greatly reduce output reference voltage temperature coefficient, there is higher compensation stability, and less to the initial Accuracy of reference voltage.
Second embodiment of the invention relates to a kind of low temperature coefficient with gap voltage reference circuit.Fig. 2 is the structural representation of this low temperature coefficient with gap voltage reference circuit.
The second embodiment improves on the basis of the first embodiment, main improvements are: nonlinear temperature sensing unit TCC comprises: the 3rd current source Is, P-type mos PMOS pipe PMA and PM B, N-type metal-oxide semiconductor (MOS) NMOS manages NMA, NM B and NM1.
P-type mos (P-Mental-Oxide-Semicond uctor is called for short " PMOS "), similarly, N type metal oxide semiconductor (N-Mental-Oxide-Semiconductor is called for short " NMOS ").
Specifically, as shown in Figure 2,
One end of the 3rd current source Is is connected with power vd D, and the other end is connected with the source electrode of PMA.
The grid of PMA is connected with the tie point of resistance R 2 and R3, and the drain electrode of PMA is connected with the drain electrode of NMA.
The source electrode of PMB is connected with the source electrode of PMA, the grid of PMB and transistor base-emitter both end voltage V
bE(T) connect, the drain electrode of PM B is connected with the drain electrode of NM B.
The source ground of NMA, the grid of NMA is connected with the drain electrode of NMA.
The source ground of NMB, the grid of NMB is connected with the drain electrode of NMB.
The source ground of NM1, the grid of NM1 is connected with the grid of NMA, and the drain electrode of NM1 is connected with output port Vref.
Nonlinear temperature sensing unit TCC, by transistor BE junction voltage is carried out to temperature detection, then produce a non-linear current, the circuit contrary with two kinds of temperatures coefficient in reference circuit superposes, thereby produces and temperature irrelevant zero-temperature coefficient reference voltage almost.
Third embodiment of the invention relates to a kind of low temperature coefficient with gap voltage reference circuit.Fig. 3 is the structural representation of this low temperature coefficient with gap voltage reference circuit.
The 3rd embodiment improves on the basis of the first embodiment, and main improvements are:
The first current source I
pTATwith the second current source I
iPTATcomprise: transistor Q0 and Q1, resistance R 0, R1 and R4, PMOS pipe PM1, PM2 and PM3, operational amplifier OP1.
Specifically, as shown in Figure 3, this circuit structure has four parts to form: band-gap reference benchmark core circuit 101, the road 102 of voltage stack output, nonlinear temperature compensating coefficient circuit 103, reference source start circuit 104.
The source electrode of PM1 is connected with power vd D, and the grid of PM1 is connected with the grid of PM2, and the drain electrode of PM1 is connected with the inverting input of OP1.
The source electrode of PM2 is connected with power vd D, and the drain electrode of PM2 is connected with the in-phase input end of OP1.
The source electrode of PM3 is connected with power vd D, and the grid of PM3 is connected with the grid of PM1, and the drain electrode of PM3 is connected with output port Vref.
The output terminal of OP1 is connected with the grid of PM1.
One end of R0 is connected with the drain electrode of PM2, and the other end is connected with the emitter of Q0.
One end of R1 is connected with the drain electrode of PM1, other end ground connection.
One end of R4 is connected with the drain electrode of PM2, other end ground connection.Here R4 and R1 equal and opposite in direction.
The base earth of Q0, grounded collector.
The base earth of Q1, grounded collector, emitter is connected with the drain electrode of PM1.
In reference circuit, there are two kinds of electric currents that temperature coefficient is contrary, if its equal and opposite in direction can produce zero-temperature coefficient reference current simultaneously.
In addition, be appreciated that this is a kind of preferred implementation of the present invention, in some other embodiment of the present invention, the first current source I
pTATwith the second current source I
iPTATalso can there is other implementation.
Also comprise: start-up circuit, one end of this start-up circuit is connected with power vd D, and the other end is connected with the drain electrode of PM 1.
Start-up circuit is for reference circuit can normally be worked after circuit powers on.
Start-up circuit is prior art, and starts various informatively, no longer elaborates here.
Band-gap reference core circuit 101 circuit are by triode Q0, Q1; Resistance R 0, R1 and R4; Operational amplifier OP1 and PMOS current mirror PM1 and PM2 form.Wherein, the ratio of the emitter junction area of Q1 and Q0 is 1: N, wherein, N is positive integer.
Utilize the short characteristic of void of operational amplifier O P1 that node A, B current potential are equated, in resistance R 0, produce a Δ V
bEpressure drop, here Δ V
bErefer to the base-emitter voltage difference of transistor Q1 and Q0.Thereby in benchmark core circuit, produce a PTAT who is directly proportional to absolute temperature (Proportion To Absolute Temperature) electric current, simultaneously, because triode B-E knot has negative temperature coefficient feature, therefore in R1 and R4, produce IPTAT (the Inverse Proportion To Absolute Temperature) electric current of negative temperature coefficient.Therefore its equal and opposite in direction in PM1 and PM2 branch road, there are two kinds of electric currents that temperature coefficient is contrary, if can produce zero-temperature coefficient reference current simultaneously.
Reference circuit voltage stack output branch road 102 is by PMOS pipe PM3, and resistance R 2 and R3 form, and this branch road superposes two kinds of contrary electric currents of temperature coefficient and is converted into reference voltage on resistance, produces reference voltage.
Nonlinear temperature compensating coefficient circuit 103 is comprised of a nonlinear temperature sensing unit TCC, this unit is by carrying out temperature detection to transistor BE junction voltage, then produce a non-linear current, linear PTAT electric current in this electric current and reference voltage stack output branch road, non-linear IPTAT electric current superposes, thereby produces the another temperature coefficient reference voltage almost haveing nothing to do with temperature.
Reference source start circuit 104 adds in order to make reference circuit normally work after circuit powers on.Various informative owing to starting, therefore provide no longer in detail its specific implementation here.
Introduce in detail the principle that realizes of this low temperature coefficient with gap voltage reference circuit below.
As shown in Figure 3, the ratio of Q1 and Q0 emitter junction area is 1: N, first compensation phase reference voltage expression formula is
Wherein, V
t=KT/q is thermal voltage, and K is Boltzmann constant, and T is absolute temperature, and q is electronic charge.M is resistance ratio R3/R1.Consider V
bEnon-linear
In formula, VG0 is the band gap voltage of silicon materials under 0K, and representative value is 1.205V, normal temperature T0=300K, and γ, α are respectively the coefficient relevant with collector current index temperature coefficient to transistor base hole mobility.
This shows, transistor E-B junction voltage has stronger nonlinear temperature characteristic, utilizes the positive temperature voltage of traditional linearity to compensate V
bEtemperature characterisitic, after its compensation, still include remaining nonlinear temperature coefficient in reference voltage, in high temperature and low-temperature region, show reference voltage and vary with temperature and change larger feature, if linear term and V
bElinear term offset completely, after linear compensation, the residual temperature coefficient entry of reference voltage can be expressed as
α=1 when transistor collector electric current is PTAT characteristic, α=0 when transistor collector electric current is zero-temperature coefficient characteristic.In general CMOS technique, γ is greater than 1, so V
nLalong with the rising of temperature presents non-linear negative temperature characteristic.
Four embodiment of the invention relates to a kind of low temperature coefficient with gap voltage reference circuit.Fig. 4 is the structural representation of this low temperature coefficient with gap voltage reference circuit.
The 4th embodiment second and the basis of the 3rd embodiment on improve, main improvements are: the 3rd current source is a PMOS pipe PM4.
Specifically, as shown in Figure 4, the source electrode of PM4 is connected with power vd D, and the grid of PM4 is connected with the grid of PM1, and the drain electrode of PM4 is connected with the source electrode of PMA.
In addition, be appreciated that in some other embodiment of the present invention, current source can not be also PMOS pipe, but the current source of other form.
Nonlinear temperature compensating coefficient circuit 103, just based on to V
bEthe detection of voltage temperature characteristic, thus a nonlinear compensation electric current produced, thus offset V in reference voltage
nL.These nonlinear temperature compensating coefficient circuit 103 circuit are managed PMA by PMOS, PMB, and PM4 and NMOS pipe NMB, NMA, NM 1 forms.Concrete principle is as follows: at low temperature range T0 temperature, in reference circuit voltage stack output branch road 102, by the dividing potential drop of R2 and R3, make grid potential and the V of PMA
bE(T0) equate, now, in PM4, electric current is I, and the electric current in PMA, PM B is respectively 1/2, now I
nLfor m1/2, within the scope of T < T0, the grid voltage of PM B will be greater than the grid voltage of PMA, simultaneously due to V
bEnon-linear negative temperature coefficient feature, along with reducing of temperature, PM B grid voltage will obviously be greater than PMA grid voltage, work as T=Tmin, the electric current in PM4 will all flow in NMA branch road, i.e. I
nL=m1; At high-temperature area, along with temperature constantly increases, the grid voltage of PM B is by the grid voltage being less than in PMA on the contrary, and when T=Tmax, in PM4, electric current all flows in NM B branch road, now I
nL=0.Due to V
bEnonlinear characteristic, when temperature by low temperature in high temperature change procedure, I
nLin electric current also present a non-linear process that reduces, from m1, be finally reduced to zero.It should be noted that I
nLbe one vary with temperature with respect to the electric current I o in PM3 be only one in a small amount.Meanwhile, if by the grid transposition of PMA and PMB, can obtain the nonlinear compensation electric current that raises and reduce gradually with temperature.
The road 102 of the low temperature coefficient with gap reference circuit output based on proposing herein, the PTAT electric current that benchmark output voltage is produced by Δ VBE, V
bEthe IPTAT electric current and the non-linear current I that produce
nLon branch road resistance, common stack produces.Therefore, the low-temperature coefficient voltage reference non-linear temperature compensation circuit theory based on inventing herein, by the control of the electric current stack to above-mentioned three kinds and to I
nLthe selection of temperature characterisitic, can pass through multiple compensation policy, effectively reduces the temperature coefficient of reference voltage and realizes low-temperature coefficient reference voltage.
Based on nonlinear temperature compensating coefficient circuit 103 in this paper, can carry out nonlinear temperature compensating coefficient by two kinds of nonlinear compensation electric current stacked systems.As Fig. 5 A) as shown in, when the nonlinear compensation electric current producing is the non-linear current that raises and increase with temperature, this electric current can be converted to the non-linear positive temperature voltage V increasing gradually with temperature rising on resistance
nL, can the positive temperature current of linear adjustment, PTAT size of current is not exclusively offset V
bEin linear temperature coefficient, but make PTAT voltage be greater than V
bElinear temperature item, the reference voltage vref0 after linear compensation shows stronger positive temperature characterisitic at high-temperature area, the road by output is by Vref0 and V
nLsubtract each other, the nonlinear temperature coefficient of Vref0 is by non-linear voltage V
nLoffset, thereby obtain the benchmark output voltage V ref that a temperature coefficient is less.In addition, by the control to compensating circuit, also can produce and A) the middle contrary nonlinear compensation voltage of temperature characterisitic, as Fig. 5 B) as shown in, now need the PTAT voltage in Vref0 to be less than V
bElinear temperature item, now Vref0 reveals stronger non-linear negative temperature characteristic at pyrometric scale, and Vref0 is deducted to non-linear negative temperature bucking voltage, and now the non-linear negative temperature coefficient in Vref0 is by V
nLvoltage is offset, and has therefore greatly improved the temperature coefficient characteristics of output reference voltage Vref.
Fifth embodiment of the invention relates to a kind of low temperature coefficient with gap voltage reference circuit.Fig. 6 is the structural representation of this low temperature coefficient with gap voltage reference circuit.
Fig. 7 is a kind of preferred non-linear temperature compensation voltage reference circuit embodiment output reference voltage temperature curve.
The 5th embodiment improves on the basis of the 4th embodiment, specifically, and as shown in Figure 6:
Operational amplifier O P1 comprises: PMOS pipe PM5, PM6 and PM7, NMOS manages NM2, NM3, NM4 and NM5.
The source electrode of PM5 is connected with power vd D, and the grid of PM5 is connected with the grid of PM6, and the drain electrode of PM5 is connected with the grid of PM 1.
The source electrode of PM6 is connected with power vd D, and the grid of PM6 is connected with the drain electrode of PM6, and the drain electrode of PM6 is connected with the drain electrode of NM5.
The source electrode of PM7 is connected with power vd D, and the grid of PM7 is connected with the grid of PM 1, and the drain electrode of PM7 is connected with the drain electrode of NM3.
The source ground of NM2, the grid of NM2 is connected with the grid of NM3, and the drain electrode of NM2 is connected with the source electrode of NM4.
The source ground of NM3, the grid of NM3 is connected with the drain electrode of NM3.
The grid of NM4 is connected with the drain electrode of PM1, and the drain electrode of NM4 is connected with the grid of PM1.
The source electrode of NM5 is connected with the drain electrode of NM2, and the grid of NM5 is connected with the drain electrode of PM2.
In addition, be appreciated that O P1 also can have other implementation in some other embodiment of the present invention, and be not limited to this kind of form.
This reference circuit uses CMOS technique to realize.
Reference circuit uses CMOS technique to realize, and can more effectively reduce costs.
In addition, be appreciated that reference circuit also can be realized by other technique in some other embodiment of the present invention.
It should be noted that, each unit of mentioning in each embodiment of the present invention is all logical block, physically, a logical block can be a physical location, also can be a part for a physical location, can also realize with the combination of a plurality of physical locations, the physics realization mode of these logical blocks itself is not most important, and the combination of the function that these logical blocks realize is the key that just solves technical matters proposed by the invention.In addition, for outstanding innovation part of the present invention, above-mentioned each equipment embodiment of the present invention is not introduced the unit not too close with solving technical matters relation proposed by the invention, and this does not show that the said equipment embodiment does not exist other unit.
Although pass through with reference to some of the preferred embodiment of the invention, the present invention is illustrated and described, but those of ordinary skill in the art should be understood that and can do various changes to it in the form and details, and without departing from the spirit and scope of the present invention.
Claims (8)
1. a low temperature coefficient with gap voltage reference circuit, is characterized in that, comprising: the first current source, the second current source, resistance R 2, resistance R 3 and nonlinear temperature sensing unit;
The electric current of the first current source output is directly proportional to absolute temperature; Electric current and the absolute temperature of the second current source output are inversely proportional to;
One end of the first current source is connected with power supply, and the other end is connected with output port;
The second current source and the first current source are connected in parallel;
One end of resistance R 2 is connected with the inverting input of nonlinear temperature sensing unit, other end ground connection;
One end of resistance R 3 is connected with output port, and the other end is connected with the inverting input of nonlinear temperature sensing unit;
The in-phase input end of nonlinear temperature sensing unit is connected with transistor base-emitter both end voltage, and output terminal is connected with output port.
2. low temperature coefficient with gap voltage reference circuit according to claim 1, it is characterized in that, described nonlinear temperature sensing unit comprises: the 3rd current source, P-type mos PMOS pipe PMA and PMB, N-type metal-oxide semiconductor (MOS) NMOS pipe NMA, NMB and NM1;
One end of the 3rd current source is connected with power supply, and the other end is connected with the source electrode of PMA;
The grid of PMA is connected with the tie point of resistance R 2 and R3, and the drain electrode of PMA is connected with the drain electrode of NMA;
The source electrode of PMB is connected with the source electrode of PMA, and the grid of PMB is connected with transistor base-emitter both end voltage, and the drain electrode of PMB is connected with the drain electrode of NMB;
The source ground of NMA, the grid of NMA is connected with the drain electrode of NMA;
The source ground of NMB, the grid of NMB is connected with the drain electrode of NMB;
The source ground of NM1, the grid of NM1 is connected with the grid of NMA, and the drain electrode of NM1 is connected with output port.
3. low temperature coefficient with gap voltage reference circuit according to claim 2, it is characterized in that, described the first current source and the second current source comprise: transistor Q0 and Q1, resistance R 0, R1 and R4, PMOS pipe PM1, PM2 and PM3, operational amplifier OP1;
The source electrode of PM1 is connected with power supply, and the grid of PM1 is connected with the grid of PM2, and the drain electrode of PM1 is connected with the inverting input of OP1;
The source electrode of PM2 is connected with power supply, and the drain electrode of PM2 is connected with the in-phase input end of OP1;
The source electrode of PM3 is connected with power supply, and the grid of PM3 is connected with the grid of PM1, and the drain electrode of PM3 is connected with output port;
The output terminal of OP1 is connected with the grid of PM1;
One end of R0 is connected with the drain electrode of PM2, and the other end is connected with the emitter of Q0;
One end of R1 is connected with the drain electrode of PM1, other end ground connection;
One end of R4 is connected with the drain electrode of PM2, other end ground connection;
The base earth of Q0, grounded collector;
The base earth of Q1, grounded collector, emitter is connected with the drain electrode of PM1.
4. low temperature coefficient with gap voltage reference circuit according to claim 3, is characterized in that, described the 3rd current source is a PMOS pipe PM4;
The source electrode of PM4 is connected with power supply, and the grid of PM4 is connected with the grid of PM1, and the drain electrode of PM4 is connected with the source electrode of PMA.
5. low temperature coefficient with gap voltage reference circuit according to claim 3, is characterized in that, also comprises: start-up circuit, and one end of this start-up circuit is connected with power supply, and the other end is connected with the drain electrode of PM1.
6. low temperature coefficient with gap voltage reference circuit according to claim 5, is characterized in that, described operational amplifier OP1 comprises: PMOS pipe PM5, PM6 and PM7, and NMOS manages NM2, NM3, NM4 and NM5;
The source electrode of PM5 is connected with power supply, and the grid of PM5 is connected with the grid of PM6, and the drain electrode of PM5 is connected with the grid of PM1;
The source electrode of PM6 is connected with power supply, and the grid of PM6 is connected with the drain electrode of PM6, and the drain electrode of PM6 is connected with the drain electrode of NM5;
The source electrode of PM7 is connected with power supply, and the grid of PM7 is connected with the grid of PM1, and the drain electrode of PM7 is connected with the drain electrode of NM3;
The source ground of NM2, the grid of NM2 is connected with the grid of NM3, and the drain electrode of NM2 is connected with the source electrode of NM4;
The source ground of NM3, the grid of NM3 is connected with the drain electrode of NM3;
The grid of NM4 is connected with the drain electrode of PM1, and the drain electrode of NM4 is connected with the grid of PM1;
The source electrode of NM5 is connected with the drain electrode of NM2, and the grid of NM5 is connected with the drain electrode of PM2.
7. low temperature coefficient with gap voltage reference circuit according to claim 6, is characterized in that, the ratio of the emitter junction area of Q1 and Q0 is 1:N, and wherein, N is positive integer.
8. according to the low temperature coefficient with gap voltage reference circuit described in any one in claim 1 to 7, it is characterized in that, this reference circuit uses CMOS technique to realize.
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| CN103729010B (en) * | 2012-10-15 | 2015-04-29 | 上海聚纳科电子有限公司 | High-precision band-gap reference source circuit |
| CN104238619B (en) * | 2014-09-26 | 2016-08-24 | 深圳市芯海科技有限公司 | A kind of temperature-compensation circuit of reference voltage |
| CN105928632B (en) * | 2016-07-07 | 2019-02-22 | 杭州澜达微电子科技有限公司 | A kind of temperature sensor front-end circuit |
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| CN109764972B (en) * | 2018-12-29 | 2024-07-19 | 杭州士兰微电子股份有限公司 | Temperature detection module, temperature monitoring circuit and power chip |
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