CN107861562A - A kind of current generating circuit and its implementation - Google Patents
A kind of current generating circuit and its implementation Download PDFInfo
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- CN107861562A CN107861562A CN201711072180.4A CN201711072180A CN107861562A CN 107861562 A CN107861562 A CN 107861562A CN 201711072180 A CN201711072180 A CN 201711072180A CN 107861562 A CN107861562 A CN 107861562A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/267—Current mirrors using both bipolar and field-effect technology
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Abstract
The invention discloses a kind of current generating circuit and its implementation, the circuit includes：Positive temperature coefficient PTAT current generation circuit, for producing the electric current I of a positive temperature coefficient0；Biasing circuit, for the grid voltage of each PMOS of mirror-image constant flow source is stable in design load；First mirror-image constant flow source, for providing the electric current I for the positive temperature coefficient PTAT current generation circuit0And by the electric current to the second mirror-image constant flow source；Second mirror-image constant flow source, for by the electric current I of the positive temperature coefficient of current source form0Be converted to the electric current Iref of the positive temperature coefficient of current sink form；Negative temperature coefficient CTAT current produces and combiner circuit, for producing the electric current of negative temperature coefficient and merging to form the output current small with temperature dependency with the electric current Iref of positive temperature coefficient, by the present invention, a kind of low in energy consumption and less current reference source of temperature dependency can be produced.
Description
Technical field
The present invention relates to a kind of current generating circuit and its implementation, more particularly to a kind of smaller with temperature dependency
Even unrelated current generating circuit and its implementation.
Background technology
In numerical model analysis on-chip system, reference current source provides appropriate biasing for each analog module of system, into
For the indispensable part of system, it is widely used in the circuits such as operational amplifier, A/D, D/A.
Based on the demand applied on piece, reference current source should not with temperature, voltage and various technological parameters change and
Change.But the reference current of several main flows occurred at present, generally existing temperature coefficient is bigger than normal or complex circuit designs cause
The problem of circuit power consumption is higher, such as (Chen J, the Shi B.1V CMOS Current Reference with 50ppm/ of document 1
℃Temperature Coefficient[J].Electron.Lett.,2003,39:The circuit test proposed in 209-210)
Temperature coefficient be 50ppm/ DEG C, (Franco Fiori, the Paolo Stefano Crovetti.A New Compact of document 2
Temperature Compensated CMOS Current Reference[J].IEEE Trans.on Circuit and
System II:Express Briefs, 2005,52.) propose that a kind of non-bandgap circuit passes through second-order temperature compensation and produces benchmark
Electric current, temperature coefficient are 28ppm/ DEG C.(Dehg hani R, the Ataro di S M.A New Low Voltage of document 3
Precision CMOS Current Refer ence w ith no Ex ternal Compone nts[J].IEEE Tr
ans.on Cir c.Syst.II:Analo g and Digital Sig nal Processing,2003,50(12):928-
932) propose that the subzero temperature effect that positive temperature coefficient reference voltage and mobility are produced using band-gap reference circuit is cancelled out each other, produce base
Quasi- electric current, but temperature coefficient is more than 15ppm/ DEG C.A kind of (the low-voltage Low Drift Temperatures of Zhou Yun, Lv Jian, Wu Zhiming, Jiang Yadong of document 4
Reference current source [J] modern electronic technologies, 2009,285 (8)：178-181.) propose that one kind passes through two based on band-gap reference
Rank temperature-compensating produces reference current, 8.1ppm/ DEG C of temperature coefficient, the microwatt of circuit power consumption hundreds of.
The content of the invention
To overcome above-mentioned the shortcomings of the prior art, the purpose of the present invention be to provide a kind of current generating circuit and its
Implementation method, with realize produce it is a kind of low in energy consumption and with the less current reference source of temperature dependency.
In view of the above and other objects, the present invention proposes a kind of current generating circuit, including：
Positive temperature coefficient PTAT current generation circuit, for producing the electric current I of a positive temperature coefficient0；
Biasing circuit, for the grid voltage of each PMOS of mirror-image constant flow source is stable in design load；
First mirror-image constant flow source, for providing the electric current I for the positive temperature coefficient PTAT current generation circuit0And will
The electric current is to the second mirror-image constant flow source；
Second mirror-image constant flow source, for by the electric current I of the positive temperature coefficient of current source form0Be converted to current sink form
The electric current Iref of positive temperature coefficient；
Negative temperature coefficient CTAT current produce and combiner circuit, for produce negative temperature coefficient electric current and with positive temperature system
Several electric current Iref merge to form the output current small with temperature dependency.
Further, the positive temperature coefficient PTAT current generation circuit includes the first PNP triode, the poles of the 2nd PNP tri-
Pipe and first resistor, the colelctor electrode and base earth of first PNP triode and the second PNP triode, the first PNP tri-
The emitter stage of pole pipe is connected to one end of first resistor, and the other end of the first resistor connects the biasing circuit and described the
One mirror-image constant flow source, the emitter stage of second PNP triode are connected to the biasing circuit and first mirror-image constant flow source.
Further, the size ratio of first PNP triode and second PNP triode is N：1.
Further, the biasing circuit includes the first amplifier, the inverting input connection of first amplifier described the
One resistance and first mirror-image constant flow source, the in-phase input end of first amplifier connect the emitter stage of second PNP pipe
With first mirror-image constant flow source, the output end of first amplifier connects first mirror-image constant flow source.
Further, first mirror-image constant flow source includes the first PMOS, the second PMOS, the 3rd PMOS, described
The grid of first PMOS is connected with the grid of the second PMOS and the grid of the 3rd PMOS, and is connected to first amplifier
Output end, the source electrode of the source electrode of first PMOS, the source electrode of the second PMOS and the 3rd PMOS connects supply voltage, institute
The inverting input that the drain electrode of the first PMOS connects the first resistor and first amplifier is stated, second PMOS
Drain electrode connects emitter stage, the in-phase input end of the second amplifier of second PNP pipe, the drain electrode output institute of the 3rd PMOS
The electric current Iref of positive temperature coefficient is stated to second mirror-image constant flow source.
Further, first PMOS, the second PMOS, the size ratio of the 3rd PMOS are 1：1：1.
Further, second mirror-image constant flow source includes the first NMOS tube, the second NMOS tube, first NMOS tube
Drain electrode is connected to the 3rd PMOS drain electrode, the connected rear grid with first NMOS tube of grid leak of second NMOS tube
It is connected, and is connected to the negative temperature coefficient CTAT current generation and combiner circuit, first NMOS tube, the second NMOS tube source
Pole is grounded.
Further, the negative temperature coefficient CTAT current produces includes the 4th PMOS and the second electricity with combiner circuit
Resistance, the 4th PMOS drain electrode connect the grid leak pole of second NMOS tube, and source electrode connects supply voltage, and the second resistance is connected to
Between the 4th PMOS grid and supply voltage, and the 4th PMOS grid output is described small with temperature dependency
Output current.
Further, the electric current of the 4th PMOS grid output is
Wherein, IrefFor the electric current of the positive temperature coefficient of the current sink form, M is the first NMOS tube and the second NMOS tube
The ratio of size, (W/L)P4For the breadth length ratio of the 4th PMOS, COXFor unit area gate capacitance, Vth4For the 4th PMOS PM4
Threshold voltage, hole mobility μpFor an amount being inversely proportional with temperature, R2For the resistance of second resistance.
To reach above-mentioned purpose, the present invention also provides a kind of implementation method of current generating circuit, comprised the following steps：
Step 1, the electric current I of a positive temperature coefficient is produced using positive temperature coefficient PTAT current generation circuit0；
Step 2, using the first mirror-image constant flow source by electric current I0Output is to the second mirror-image constant flow source, by current source form
Positive temperature coefficient electric current I0Be converted to the electric current Iref of the positive temperature coefficient of current sink form；
Step 3, the electric current that a negative temperature coefficient is produced with combiner circuit is produced using the negative temperature coefficient CTAT current
And merge with the electric current Iref of the positive temperature coefficient, produce and export an output current small with temperature dependency.
Compared with prior art, a kind of current generating circuit of the present invention and its implementation are produced by positive temperature coefficient electric current
Raw circuit produces the electric current of a positive temperature coefficient, and negative temperature parameter current produces the electric current that negative temperature coefficient is produced with combiner circuit
And merge with the electric current of positive temperature coefficient, the mechanism mutually compensated for based on mobility and threshold voltage, realize generation and temperature
Independent current reference source ground purpose.
Brief description of the drawings
Fig. 1 is a kind of circuit structure diagram of current generating circuit of the present invention；
Fig. 2 is a kind of step flow chart of the implementation method of current generating circuit of the present invention.
Embodiment
Below by way of specific instantiation and embodiments of the present invention are described with reference to the drawings, those skilled in the art can
Understand the further advantage and effect of the present invention easily by content disclosed in the present specification.The present invention can also pass through other differences
Instantiation implemented or applied, the various details in this specification also can be based on different viewpoints with application, without departing substantially from
Various modifications and change are carried out under the spirit of the present invention.
Fig. 1 is a kind of circuit structure diagram of current generating circuit of the present invention.As shown in figure 1, a kind of electric current of the present invention produces
Circuit, including：Positive temperature coefficient PTAT current generation circuit 10, biasing circuit 20, the first mirror-image constant flow source 30, the second mirror image are permanent
Stream source 40 and negative temperature coefficient CTAT current produce and combiner circuit 50.
Wherein, positive temperature coefficient PTAT current generation circuit 10 is by the first PNP triode PNP1, the second PNP triode
PNP2 and first resistor R1 compositions, for producing the electric current I of a positive temperature coefficient PTAT0；Biasing circuit 20 is by the first amplifier
OPA1 is formed, for the first-the three PMOS PM1-PM3 of mirror-image constant flow source 30 grid voltage is stable in design load；
Mirror-image constant flow source 30 is made up of the first PMOS PM1, the second PMOS PM2 and the 3rd PMOS PM3, for for the first PNP tri-
Pole pipe PNP1, the second PNP triode PNP2 provide equal electric current I0And the electric current is exported to the second mirror-image constant flow source 40；The
Two mirror-image constant flow sources 40 are made up of the first NMOS tube NM1 and the second NMOS tube NM2, for by current source (Source) form just
Temperature coefficient PTAT electric current I0Be converted to the positive temperature coefficient PTAT of current sink (Sink) form electric current Iref；Negative temperature system
Number CTAT current produces and combiner circuit 50, is made up of the 4th PMOS PM4 and second resistance R2, for producing negative temperature coefficient
Electric current and merging with the electric current Iref of positive temperature coefficient obtain both and, the electric current of negative temperature coefficient is by special with negative temperature
The threshold voltage V of 4th PMOS of propertyth4Produce.Here it should be noted that, 60 in figure be load circuit, by the 3rd NMOS
Pipe NM3 is formed, the load for analog circuit.
In the specific embodiment of the invention, the first PNP pipe PNP1 and the second PNP pipe PNP2 colelctor electrode and base earth,
First PNP pipe PNP1 emitter stage is connected to first resistor R1 one end, and the first resistor R1 other end is connected to the first amplifier
The drain electrode of OPA1 inverting input and the first PMOS PM1, the first PNP pipe PNP1 emitter stage are connected to the first amplifier OPA1
In-phase input end, the second PMOS PM2 drain electrode and the second amplifier OPA2 in-phase input end, the first PMOS PM1 grid
Pole is connected with the second PMOS PM2 grid and the 3rd PMOS PM3 grid, the first PMOS PM1 source electrode, the 2nd PMOS
The source electrode of pipe PM2 source electrode, the 3rd PMOS PM3 and the 4th PMOS PM4 connects power vd D, the drain electrode connection of the 3rd PMOS
To the first NMOS tube NM1 drain electrode and the 3rd NMOS tube NM3 grid, the first NMOS tube NM1 grid and the 4th PMOS
Drain electrode, the second NMOS tube NM2 grid are connected with drain electrode, the first NMOS tube NM1, the second NMOS tube NM2 and the 3rd NMOS tube NM3
Source ground, the 3rd NMOS tube NM3 drain electrode is connected with the 4th PMOS PM4 grid and second resistance R2 one end,
The two resistance R2 other end is connected to power vd D.
Specifically, if the electric current for flowing through the first PNP triode PNP1 is I0, due to the first PNP triode PNP1 and
The size ratio that two PNP triode PNP2 provide the PMOS of electric current is 1：1, therefore flow through the second PNP triode PNP2 electric current
For I0If the second PNP triode PNP2 saturation current is IS, due to the first PNP triode PNP1 and the second PNP triode
PNP2 size ratio is N：1, then know that the first PNP triode PNP1 saturation current is N*I according to microelectronics theoryS, according to
Triode knowledge has the second PNP triode PNP2 base-emitter voltage Vbe2With the first PNP triode PNP1 base emitter
Pole tension Vbe1Respectively：
Its voltage difference is：
Due to the first amplifier OPA1 presence, voltage V1=V2=Vbe2, therefore this voltage difference is first resistor R1 pressure
Drop, therefore the electric current for flowing through PNP1 is I0=Δ Vbe/ R1, the first PMOS PM1 connect with the first PNP triode PNP1, then flowed through
First PMOS PM1 electric current is I0=Δ Vbe/ R1, the 3rd PMOS PM3 of another aspect and the first PMOS PM1, second
PMOS PM2 gate source voltage is consistent and size is identical, therefore flows through the 3rd PMOS PM3 electric current and flow through the first PMOS
PM1 electric current is consistent, is I0=Δ Vbe/ R1, it is known that (wherein, K is Boltzmann constant to VT=KT/q, and T is thermodynamics temperature
Degree, q is electron charge), then flowing through the first PMOS PM1, the second PMOS PM2, the 3rd PMOS PM3 electric current is：
I.e. the electric current is an electric current directly proportional to temperature.
The electric current for flowing through the 4th PMOS PM4 is：
It is so as to the 4th PMOS PM4 gate source voltage：
I in formulaP4=M × Iref
Then output current
Wherein M is transistor NM1 and NM2 pipes ratio, (W/L)P4For the 4th PMOS PM4 breadth length ratio, COXFor unit
Area gate capacitance, Vth4For the 4th PMOS PM4 threshold voltage, hole mobility μpIt is an amount being inversely proportional with temperature (temperature
Coefficient -1.5 are spent, the parameter has certain correlation with technique), so as to obtainIt is one directly proportional to temperature
Amount；VthIt is one to be inversely proportional with temperature a parameter, passes through the M (W/L) in adjustment typep4, so as to just available one with
The even unrelated electric current I of temperature dependency very littleout。
It can be seen that the mechanism that the present invention is mutually compensated for based on mobility and threshold voltage, can produce one it is temperature independent
Current reference source.It is demonstrated experimentally that in -40 DEG C -80 DEG C of wide temperature range, the temperature for the reference current source that the present invention obtains
Coefficient is 5ppm/ DEG C, and circuit power consumption is less than 10 microwatts.
Fig. 2 is a kind of step flow chart of the implementation method of current generating circuit of the present invention.As shown in Fig. 2 the present invention one
The implementation method of kind current generating circuit, comprises the following steps：
Step 201, the electric current I of a positive temperature coefficient PTAT is produced using positive temperature coefficient PTAT current generation circuit0。
Step 202, using the first mirror-image constant flow source by electric current I0Output is to the second mirror-image constant flow source, by current source
(Source) the positive temperature coefficient PTAT of form electric current I0Be converted to the positive temperature coefficient PTAT's of current sink (Sink) form
Electric current Iref.
Step 203, the electricity that a negative temperature coefficient is produced with combiner circuit is produced using the negative temperature coefficient CTAT current
Flow and merge to obtain with the electric current Iref of the positive temperature coefficient both and, the electric current of the negative temperature coefficient is by with subzero temperature
Spend the threshold voltage V of the PMOS of characteristicth4Produce.
In summary, a kind of current generating circuit of the present invention and its implementation pass through positive temperature coefficient current generating circuit
Produce the electric current of a positive temperature coefficient, negative temperature parameter current produce with combiner circuit produce negative temperature coefficient electric current and with just
The electric current of temperature coefficient merges, and the mechanism mutually compensated for based on mobility and threshold voltage, realizes and produces temperature independent electricity
With flowing reference source purpose.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.Any
Art personnel can be modified above-described embodiment and changed under the spirit and scope without prejudice to the present invention.Therefore,
The scope of the present invention, should be as listed by claims.
Claims (10)
1. a kind of current generating circuit, including：
Positive temperature coefficient PTAT current generation circuit, for producing the electric current I of a positive temperature coefficient0；
Biasing circuit, for the grid voltage of each PMOS of mirror-image constant flow source is stable in design load；
First mirror-image constant flow source, for providing the electric current I for the positive temperature coefficient PTAT current generation circuit0And by the electricity
Flow to the second mirror-image constant flow source；
Second mirror-image constant flow source, for by the electric current I of the positive temperature coefficient of current source form0Be converted to the positive temperature of current sink form
Spend the electric current Iref of coefficient；
Negative temperature coefficient CTAT current produce and combiner circuit, for produce negative temperature coefficient electric current and with positive temperature coefficient
Electric current Iref merges to form the output current small with temperature dependency.
A kind of 2. current generating circuit as claimed in claim 1, it is characterised in that：The positive temperature coefficient PTAT current produces
Circuit includes the first PNP triode, the second PNP triode and first resistor, first PNP triode and the poles of the 2nd PNP tri-
The colelctor electrode and base earth of pipe, the emitter stage of first PNP triode are connected to one end of first resistor, first electricity
The other end of resistance connects the biasing circuit and first mirror-image constant flow source, and the emitter stage of second PNP triode connects
To the biasing circuit and first mirror-image constant flow source.
A kind of 3. current generating circuit as claimed in claim 2, it is characterised in that：First PNP triode and described the
The size ratio of two PNP triodes is N：1.
A kind of 4. current generating circuit as claimed in claim 2, it is characterised in that：The biasing circuit includes the first amplifier,
The inverting input of first amplifier connects the first resistor and first mirror-image constant flow source, first amplifier it is same
Phase input connects the emitter stage of second PNP pipe and first mirror-image constant flow source, and the output end of first amplifier connects
Connect first mirror-image constant flow source.
A kind of 5. current generating circuit as claimed in claim 4, it is characterised in that：First mirror-image constant flow source includes first
PMOS, the second PMOS, the 3rd PMOS, the grid of first PMOS and the grid of the second PMOS and the 3rd PMOS
The grid of pipe is connected, and is connected to the output end of first amplifier, the source electrode of first PMOS, the source of the second PMOS
The source electrode of pole and the 3rd PMOS connects supply voltage, and the first PMOS drain electrode connects the first resistor and described first
The inverting input of amplifier, the drain electrode of second PMOS connect the emitter stage of second PNP pipe, the same phase of the second amplifier
Input, the drain electrode of the 3rd PMOS export the electric current Iref of the positive temperature coefficient to second mirror-image constant flow source.
A kind of 6. current generating circuit as claimed in claim 5, it is characterised in that：First PMOS, the second PMOS,
The size of 3rd PMOS is 1：1：1.
A kind of 7. current generating circuit as claimed in claim 5, it is characterised in that：Second mirror-image constant flow source includes first
NMOS tube, the second NMOS tube, the drain electrode of first NMOS tube are connected to the 3rd PMOS drain electrode, second NMOS tube
Grid leak be connected after be connected with the grid of first NMOS tube, and be connected to the negative temperature coefficient CTAT current and produce and conjunction
Into circuit, first NMOS tube, the second NMOS tube source ground.
A kind of 8. current generating circuit as claimed in claim 7, it is characterised in that：The negative temperature coefficient CTAT current produces
Include the 4th PMOS and second resistance with combiner circuit, the 4th PMOS drain electrode connects the grid leak of second NMOS tube
Pole, source electrode connect supply voltage, and the second resistance is connected between the 4th PMOS grid and supply voltage, and described
Four PMOS grids export the described and small output current of temperature dependency.
A kind of 9. current generating circuit as claimed in claim 7, it is characterised in that：The electricity of the 4th PMOS grid output
Flow and be
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Wherein, IrefFor the electric current of the positive temperature coefficient of the current sink form, M is the first NMOS tube and the second NMOS tube size
Ratio, (W/L)P4For the breadth length ratio of the 4th PMOS, COXFor unit area gate capacitance, Vth4For the 4th PMOS PM4 threshold
Threshold voltage, hole mobility μpFor an amount being inversely proportional with temperature, R2For the resistance of the second resistance.
10. a kind of implementation method of current generating circuit, comprises the following steps：
Step 1, the electric current I of a positive temperature coefficient is produced using positive temperature coefficient PTAT current generation circuit0；
Step 2, using the first mirror-image constant flow source by electric current I0Output is to the second mirror-image constant flow source, by the positive temperature of current source form
Spend the electric current I of coefficient0Be converted to the electric current Iref of the positive temperature coefficient of current sink form；
Step 3, using the negative temperature coefficient CTAT current produce with combiner circuit produce a negative temperature coefficient electric current and with
The electric current Iref of the positive temperature coefficient merges, and produces and exports an output current small with temperature dependency.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109917843A (en) * | 2019-04-17 | 2019-06-21 | 南京芯耐特半导体有限公司 | A kind of the constant current generative circuit structure and constant current generation method of automatic biasing |
| CN110708809A (en) * | 2019-11-08 | 2020-01-17 | 深圳市德普微电子有限公司 | Constant current source generating circuit of common-anode LED display screen driving chip |
| CN111880068A (en) * | 2019-05-02 | 2020-11-03 | 西门子股份公司 | Circuit arrangement and method for controlling a power semiconductor switch |
| CN111897209A (en) * | 2020-05-19 | 2020-11-06 | 成都天锐星通科技有限公司 | Millimeter wave chip gain high-low temperature self-adaptive bias structure and method |
| CN112230704A (en) * | 2020-11-17 | 2021-01-15 | 普冉半导体(上海)股份有限公司 | Reference current source circuit |
| CN112332786A (en) * | 2020-10-30 | 2021-02-05 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Chip-level fully-integrated low-gain temperature-drift radio frequency amplifier |
| CN113566997A (en) * | 2021-07-26 | 2021-10-29 | 深圳青铜剑技术有限公司 | Temperature sensing circuit |
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