CN104977963B - A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier - Google Patents
A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier Download PDFInfo
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- CN104977963B CN104977963B CN201510398432.7A CN201510398432A CN104977963B CN 104977963 B CN104977963 B CN 104977963B CN 201510398432 A CN201510398432 A CN 201510398432A CN 104977963 B CN104977963 B CN 104977963B
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Abstract
The present invention proposes the band-gap reference circuit of a kind of high PSRR of low-power consumption without amplifier.This circuit includes PTC circuit, negative temperature parameter circuit and output circuit, and wherein, three output branchs of output circuit include two PMOS of series connection respectively；Also including: biasing circuit, biasing circuit includes the first bias PMOS pipe of series connection, the second bias PMOS pipe and biasing NMOS tube, and two bias PMOS pipes are in parallel with the PMOS in output circuit；The drain electrode of the second bias PMOS pipe is connected with biasing NMOS tube drain electrode；The grid of biasing NMOS tube is connected with the colelctor electrode of the 0th triode in PTC circuit, and the source electrode of biasing NMOS tube is connected with the emitter stage of the first triode in PTC circuit；The colelctor electrode of the first triode is connected with base stage.Adding biasing circuit, it is ensured that in PTC circuit, the voltage of transistor collector keeps consistent, with the change of supply voltage, the reference current of circuit will be changed, improve the output voltage rejection ability for power source change.
Description
Technical field
The invention belongs to integrated circuit fields, relate to the band gap base of a kind of high PSRR of low-power consumption without amplifier
Quasi-circuit.
Background technology
Along with developing rapidly of system integration technology, reference voltage source has become extensive, ultra-large integrated
Indispensable basic circuit module in circuit and nearly all digital simulator system.Reference voltage source is super large
Scale integrated circuit and the important component part of electronic system, can be widely applied to precision comparator, A/D
With in D/A converter, random access memories, flash memory and system integrated chip.Band-gap reference is all
One most popular in reference voltage, its Main Function is to provide stable reference voltage in integrated circuits
Or reference current, this just requires that band-gap reference is insensitive to the change of supply voltage and the change of temperature.
As it is shown in figure 1, be band-gap reference voltage circuit without amplifier of the prior art.This circuit includes positive temperature
Degree coefficient circuit, negative temperature parameter circuit and output circuit.PTC circuit specifically includes two NPN
Triode Q0 and Q1, and resistance R1, wherein colelctor electrode and the base stage of Q0 connects；Negative temperature parameter circuit
Including NPN triode Q2 and resistance R2.Output circuit includes three PMOS MP2, MP3 and MP4, uses
In converting electrical current into voltage output.Wherein, the area ratio between the emitter stage-base stage of triode Q1 and Q0
Example is N:1, and the voltage difference between the drain and gate of MP2, MP3 and MP4 is 2:2:K.
The expression formula of bandgap voltage reference VBG is: VBG=VBE (Q2)+[Δ VBE/R1] * R2, wherein,
VBE (Q2) is the base-emitter voltage of the Q2 with negative temperature coefficient, and Δ VBE=ln (N) * kT/e is Q0 and Q1
Base-emitter voltage difference, this voltage difference has positive temperature coefficient, and T is temperature, k=1.38 × 10-23J/K,
E=1.6 × 10-19C。
By the expression formula of above-mentioned bandgap voltage reference VBG it can be seen that to expect the VBG wanted, it is necessary to
Accurately regulating temperature coefficient, and the regulation of temperature coefficient is relatively difficult, therefore, this circuit is difficult to real
The now regulation to bandgap voltage reference.
Summary of the invention
The purpose of the present invention is to propose to the band-gap reference circuit of a kind of high PSRR of low-power consumption without amplifier, with
Solve the problem that bandgap voltage reference is difficult to regulate.
Embodiments provide the band-gap reference circuit of a kind of high PSRR of low-power consumption without amplifier, bag
Include PTC circuit, negative temperature parameter circuit and output circuit,
Three output branchs of described output circuit include two PMOS of series connection respectively；
Described reference circuit also includes that biasing circuit, described biasing circuit include the first bias PMOS of series connection
Pipe, the second bias PMOS pipe and biasing NMOS tube, two bias PMOS pipes and the PMOS in output circuit
Pipe is in parallel；The drain electrode of the second bias PMOS pipe is connected with the drain electrode of described biasing NMOS tube；Described biasing NMOS
The grid of pipe is connected with the colelctor electrode of the 0th triode in PTC circuit, described biasing NMOS tube
Source electrode is connected with the emitter stage of the first triode in PTC circuit；The colelctor electrode of described first triode
It is connected with base stage.
In foregoing circuit, it is preferred that
It is connected between drain electrode and the drain electrode of biasing NMOS tube of the second bias PMOS pipe and has divider resistance；
In biasing circuit and three output branchs, the grid of respective first PMOS is connected, and connects
Drain electrode to the second bias PMOS pipe；
In biasing circuit and three output branchs, the grid of respective second PMOS is connected, and connects
To the drain electrode biasing NMOS tube.
In foregoing circuit, it is preferred that also include:
First output resistance of series connection and the second output resistance, be connected in parallel on the two of described negative temperature parameter circuit
End, the tie point of described first output resistance and the second output resistance is as voltage output end.
In foregoing circuit, it is preferred that
First output resistance and/or the second output resistance, its resistance is adjustable.
In foregoing circuit, it is preferred that
Described negative temperature parameter circuit includes the second triode and negative temperature resistance.
The technical scheme of the embodiment of the present invention, is changed for low-voltage and low-power dissipation demand to meet chip
Enter, quiescent dissipation is required that higher chip has earth shaking meaning.In this band-gap reference circuit, by
In not being re-introduced into amplifier, so offset voltage also would not be produced for band gap (bandgap) output voltage shadow
The problem rung.
In order to increase this circuit inhibitory action for supply voltage, add a road biasing circuit, Ke Yibao
In card PTC circuit, triode Q0 colelctor electrode (collector) and the colelctor electrode (collector) of Q1
End keeps consistent, with the change of supply voltage, the reference current of circuit will be changed, improve output
Voltage is for the rejection ability of power source change.
In order to reduce the power consumption of this circuit, biasing circuit adds divider resistance, for PMOS each in this circuit
The grid of pipe provides voltage, it is not necessary to designs the grid that other biasing circuit is each PMOS and provides voltage, from
And reduce the power consumption of circuit.
In order to obtain the output of larger range of band gap reference, the most additionally add a road output resistance, can
The different output voltage values of zero temp shift temperature coefficient, temperature coefficient is obtained with the resistance by adjusting output resistance
Do not change with resistance value and the change of output voltage values.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of existing band-gap reference circuit；
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the embodiment of the present invention；
Fig. 3 is the simulation result schematic diagram of the embodiment of the present invention.
Detailed description of the invention
The present invention is described in further detail with embodiment below in conjunction with the accompanying drawings.It is understood that this
Specific embodiment described by place is used only for explaining the present invention, rather than limitation of the invention.The most also need
It is noted that for the ease of describing, accompanying drawing illustrate only part related to the present invention and not all knot
Structure.
The circuit diagram of a kind of band-gap reference circuit that Fig. 2 provides for the embodiment of the present invention, this is without amplifier low-power consumption
The band-gap reference circuit of high PSRR, including PTC circuit, negative temperature parameter circuit and output
Circuit.
Three output branchs of above-mentioned output circuit include two PMOS of series connection respectively.
Concrete, PTC circuit specifically includes two NPN triodes, the i.e. the 0th triode Q0 and the
One triode Q1, and positive temperature and resistance R1.Q0 and Q1 is that mirror image is arranged, the base stage interconnection of Q0 and Q1,
The emitter stage of Q1 is connected with one end of R1, and the other end of R1 is connected with the emitter stage of Q0, and Q0 and Q1
Colelctor electrode is connected with output circuit respectively.Wherein, the area ratio between the emitter stage-base stage of Q1 and Q0 is
N:1.
Negative temperature parameter circuit includes a NPN triode, the i.e. second triode Q2 and negative temperature resistance R2.
The emitter stage of Q2 is connected with R2, and the colelctor electrode of Q2 is connected with grid, and is connected with output circuit.
Output circuit includes PMOS MP3, MP4, MP7, MP5, MP6 and MP8, for being changed by electric current
Export for voltage.MP3, MP4 and MP7 are in parallel, i.e. MP3, MP4 is connected with the grid of MP7, source electrode phase
Connect, and drain electrode connects MP5, MP6 and MP8 respectively.MP5, MP6 are connected with the grid of MP8, and drain electrode point
Lian Jie the colelctor electrode of triode Q0, Q1 and Q2 in PTC circuit and negative temperature parameter circuit.
Wherein, the voltage difference between the drain and gate of MP3, MP4 and MP7 is 2:2:K, accordingly, MP5,
Voltage difference between the drain and gate of MP6 and MP8 is also 2:2:K.
In the present embodiment, may further comprise: biasing circuit.Described biasing circuit includes that connect first is inclined
Put PMOS MP1, the second bias PMOS pipe MP2 and biasing NMOS tube MN1, two bias PMOS pipes with
PMOS in output circuit is in parallel, concrete, first PMOS of MP1 and output circuit Zhong Ge branch
Pipe is in parallel, i.e. grid is connected, and source electrode is connected, and drain electrode connects the source electrode of MP2；The grid of MP2 and output
The grid of second PMOS of circuit Zhong Ge branch is connected, and the drain electrode of MP2 is connected with MN1 drain electrode；MN1
Grid be connected with the colelctor electrode of Q0 in PTC circuit, in the source electrode of MN1 and PTC circuit
The emitter stage of Q1 connects；The colelctor electrode of Q1 is connected with base stage.
The technical scheme of the embodiment of the present invention, in order to increase this circuit inhibitory action for supply voltage, increases
The biasing circuit of one road MP1 and MN1 composition, it is ensured that Q0 colelctor electrode (collector) and Q1
Colelctor electrode (collector) keep consistent, the reference current of circuit will not be made with the change of supply voltage
Change, improve the output voltage rejection ability for power source change；Three output branchs of this circuit divide
Do not include two PMOS of series connection, further increase the output voltage rejection ability for power source change.
In foregoing circuit, it is preferred that the drain electrode of the second bias PMOS pipe MP2 and biasing NMOS tube MN1
Connect between drain electrode and have divider resistance R4；In biasing circuit and three output branchs, respective first PMOS
The grid of pipe is connected, and is connected to the drain electrode of MP2；In biasing circuit and three output branchs, respective
The grid of two PMOS is connected, and is connected to the drain electrode of MN1.
Adding divider resistance R4 in biasing circuit, the grid for PMOS each in this circuit provides voltage,
Other biasing circuit need not be designed and provide voltage for each PMOS grid, thus reduce the power consumption of circuit.
In foregoing circuit, preferably it is additionally provided with the first output resistance R3 and second output resistance of series connection
Rout, is connected in parallel on the two ends of described negative temperature parameter circuit, and the tie point of R3 and Rout is as voltage VBG
Output.Specifically, described negative temperature parameter circuit includes Q2 and R2.Then R3 and Rout is connected in parallel on Q2
With the two ends of R2, the colelctor electrode of R3 with Q2 is connected.
First output resistance and/or the second output resistance, its resistance is the most adjustable, so as to adjust output
The scope of voltage.
The technical scheme of the embodiment of the present invention, is changed for low-voltage and low-power dissipation demand to meet chip
Enter, quiescent dissipation is required that higher chip has earth shaking meaning.In this band-gap reference circuit, by
In not being re-introduced into amplifier, so offset voltage also would not be produced for band gap (bandgap) output voltage shadow
The problem rung.In order to obtain the output of larger range of band gap reference, the most additionally add a road R3 with
The resistance of Rout composition, can be by adjusting the different output electricity being worth to zero temp shift temperature coefficient of Rout
Pressure value, temperature coefficient does not changes with resistance value and the change of output voltage values.
The expression formula of the output voltage VBG of foregoing circuit structure is:
VBG=[Vbe (q2)+R2*Vt*ln (n)/R1] * (Rout/R1)
Wherein, Vbe (q2) is the emitter junction voltage of Q2, and Vt=KT/q, q are electron charge (1.6*10E-19
Coulomb), K is Boltzmann constant, and T is temperature, and n is triode quantity N of Q1.
According to this expression formula it can be seen that output voltage VBG can be changed by the size adjusting Rout,
Its temperature characterisitic does not changes with the change of resistance Rout.Two electricity are introduced in core circuit output voltage part
The branch of resistance composition, it is achieved that keep temperature coefficient constant in the case of output voltage is adjustable.
As it is shown on figure 3, transverse axis represents supply voltage VCC in Fig. 3, its excursion is from 1.5V-4.0V,
The longitudinal axis represents the excursion of output voltage.Lines above represent after using the embodiment of the present invention to emulate
Output voltage VBG change curve, following lines represent the output electricity after using prior art to emulate
Pressure Vout change curve.In terms of simulation result, supply voltage VCC changes in the range of 1.5V-4V, defeated
The value going out voltage VBG is brought up to 5.5mV by the excursion of existing 28mV；The value of output voltage VBG is not
Their temperature characterisitic can be changed with the change adjusting (trimming) position.
Note, above are only presently preferred embodiments of the present invention and institute's application technology principle.Those skilled in the art
It will be appreciated that the invention is not restricted to specific embodiment described here, can enter for a person skilled in the art
Row various obvious changes, readjust and substitute without departing from protection scope of the present invention.Therefore, though
So by above example, the present invention is described in further detail, but the present invention be not limited only to
Upper embodiment, without departing from the inventive concept, it is also possible to include other Equivalent embodiments more,
And the scope of the present invention is determined by scope of the appended claims.
Claims (4)
1. without a band-gap reference circuit for amplifier low-power consumption high PSRR, including PTC circuit, negative temperature parameter circuit and output circuit, it is characterised in that:
Three output branchs of described output circuit include two PMOS of series connection respectively；
Described reference circuit also includes that biasing circuit, described biasing circuit include the first bias PMOS pipe of series connection, the second bias PMOS pipe and biasing NMOS tube, and two bias PMOS pipes are in parallel with the PMOS in output circuit；The drain electrode of the second bias PMOS pipe is connected with the drain electrode of described biasing NMOS tube；The grid of described biasing NMOS tube is connected with the colelctor electrode of the 0th triode in PTC circuit, and the source electrode of described biasing NMOS tube is connected with the emitter stage of the first triode in PTC circuit；The colelctor electrode of described first triode is connected with base stage；
It is connected between drain electrode and the drain electrode of biasing NMOS tube of the second bias PMOS pipe and has divider resistance；
In biasing circuit and three output branchs, the grid of respective first PMOS is connected, and is connected to the drain electrode of the second bias PMOS pipe；
In biasing circuit and three output branchs, the grid of respective second PMOS is connected, and is connected to bias the drain electrode of NMOS tube.
Circuit the most according to claim 1, it is characterised in that also include:
First output resistance of series connection and the second output resistance, be connected in parallel on the two ends of described negative temperature parameter circuit, and the tie point of described first output resistance and the second output resistance is as voltage output end.
Circuit the most according to claim 2, it is characterised in that:
First output resistance and/or the second output resistance, its resistance is adjustable.
Circuit the most according to claim 3, it is characterised in that:
Described negative temperature parameter circuit includes the second triode and negative temperature resistance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510398432.7A CN104977963B (en) | 2015-07-08 | 2015-07-08 | A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510398432.7A CN104977963B (en) | 2015-07-08 | 2015-07-08 | A kind of band-gap reference circuit of the high PSRR of low-power consumption without amplifier |
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| Publication Number | Publication Date |
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| CN104977963A CN104977963A (en) | 2015-10-14 |
| CN104977963B true CN104977963B (en) | 2016-08-17 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106055013B (en) * | 2016-04-20 | 2018-01-02 | 广东工业大学 | A kind of band-gap reference circuit of no amplifier ultra-low temperature drift |
| CN105786077B (en) * | 2016-04-20 | 2018-01-02 | 广东工业大学 | A kind of band-gap reference circuit of no amplifier high-order temperature drift compensation |
| CN106873704B (en) * | 2017-02-21 | 2018-08-17 | 深圳市爱协生科技有限公司 | Reference voltage source and its positive temperature coefficient voltage generation circuit |
| CN112486240A (en) * | 2020-12-09 | 2021-03-12 | 北方工业大学 | Band-gap reference circuit controlled by common-source amplifier |
| CN114020085B (en) * | 2021-10-18 | 2023-10-27 | 杭州中科微电子有限公司 | Reference voltage generating circuit with multiple outputs |
| CN114706442B (en) * | 2022-04-12 | 2023-07-14 | 中国电子科技集团公司第五十八研究所 | Low-power consumption band-gap reference circuit |
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Address after: Room 101, Floor 1-5, Building 8, Yard 9, Fenghao East Road, Haidian District, Beijing 100094 Patentee after: Zhaoyi Innovation Technology Group Co.,Ltd. Address before: 100083 12 Floors, Block A, Tiangong Building, Science and Technology University, 30 College Road, Haidian District, Beijing Patentee before: GIGADEVICE SEMICONDUCTOR(BEIJING) Inc. |