CN105786077B - A kind of band-gap reference circuit of no amplifier high-order temperature drift compensation - Google Patents

A kind of band-gap reference circuit of no amplifier high-order temperature drift compensation Download PDF

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Publication number
CN105786077B
CN105786077B CN201610246332.7A CN201610246332A CN105786077B CN 105786077 B CN105786077 B CN 105786077B CN 201610246332 A CN201610246332 A CN 201610246332A CN 105786077 B CN105786077 B CN 105786077B
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China
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pmos
resistance
nmos tube
type triode
drain electrode
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CN201610246332.7A
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CN105786077A (en
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陈忠学
章国豪
何全
余凯
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Guangdong University of Technology
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Guangdong University of Technology
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

Abstract

The present invention discloses a kind of band-gap reference circuit of no amplifier high-order temperature drift compensation, including PTC circuit, negative temperature parameter circuit and high order compensation circuit；The PTC circuit includes：PMOS M1a, PMOS M1b, PMOS M2a, PMOS M2b, PMOS M3a, PMOS M3b, PMOS M8a, PMOS M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6.Stating negative temperature parameter circuit includes：PMOS M7a, PMOS M7b, PMOS M9a, PMOS M9b, NPN type triode Q3.Using the temperature coefficient that output reference voltage is reduced without operational amplifier high-order compensation reference circuit, cascode structure current mirror improves the PSRR of output reference voltage（PSRR）.

Description

A kind of band-gap reference circuit of no amplifier high-order temperature drift compensation
Technical field
The present invention relates to a kind of band-gap reference circuit.
Background technology
As high-precision ADC, DAC and the basic module in telecommunication circuit, it is band-gap reference circuit Other circuit modules provide accurately voltage source or a current source.Band gap reference is unit important in integrated circuit all the time Module, its temperature characterisitic and anti-noise jamming ability is to have influence on the key factor of integrated circuit precision and performance.Traditional Band-gap reference circuit produces the reference voltage that temperature coefficient is 50ppm/ DEG C or so within the temperature range of 0~70 DEG C
In recent years, a variety of different high-order compensation technologies are proposed both at home and abroad to improve the temperature characterisitic of reference circuit, mesh The high-order compensation technology of preceding appearance includes：Exponential curve compensation technique, section linear compensating technology, the high-order temperature based on resistance Characteristic compensation method etc., for example, Ying Cao etc. propose carries out high-order compensation using dynamic basis leakage compensation technology, make base Quasi- voltage temperature coefficient in the range of -40~125 DEG C reaches 15ppm/ DEG C；Gong Xiao-feng etc. utilize different resistance materials Material progress is high-order temperature compensated, and the range of temperature of circuit is big, but caused temperature coefficient is very high；Leila Koushaeian Reduce temperature coefficient Deng using current mirror and operational amplifier, its temperature coefficient is 4.7ppm/ DEG C；
Traditional band-gap reference circuit is as shown in figure 1, the general principle of its temperature-compensating is to possess opposite thermal by two The voltage of coefficient is added with suitable weight, and final obtain has temperature independent reference voltage, and its formula is：
Wherein, VBE,Q2It is transistor Q2 emitter to base voltage, is the negative temperature coefficient electricity being inversely proportional with absolute temperature Pressure；R2, R3 are resistance；VTIt is single order negative temperature coefficient voltage,, K is that Boltzmann constant, q are unit charge electricity Amount, T are absolute temperature.By accurately adjustingRatio, the temperature coefficient of output quantity can be allowed to be cancelled completely, so as to Obtain temperature independent voltage.
The shortcomings that traditional reference voltage source, is：Due to transistor VBEIt is not linear relationship with temperature, except single order item also There is high-order nonlinear item, and traditional band-gap reference is only to VBESingle order item compensated, the V of its negative temperature dependencyBEIt is high Rank item is not compensated, so as to cause the temperature characterisitic of circuit poor.
Mostly go to realize using operational amplifier for the high-order compensation method that occurs at present, or only compensate for VBEOne Rank and part higher order term, the performance of operational amplifier can reduce with the change of temperature in itself.Simultaneously because operational amplifier Caused offset voltage brings very big influence on the output voltage of band-gap reference, and therefore, temperature coefficient can not still drop to very low.
The content of the invention
In order to solve the shortcomings of the prior art, it is an object of the invention to provide a kind of no amplifier high-order temperature drift compensation Band-gap reference circuit.The circuit uses the temperature system that output reference voltage is reduced without operational amplifier high-order compensation reference circuit Number, cascode structure current mirror improve the PSRR of output reference voltage（PSRR）.
To achieve the above object, the technical solution adopted in the present invention is：
A kind of band-gap reference circuit of no amplifier high-order temperature drift compensation, including PTC circuit, negative temperature coefficient electricity Road and high order compensation circuit, PTC circuit vary with temperature positively related electric current, negative temperature parameter circuit for generation The negative temperature parameter current of negative correlation is varied with temperature for producing, high order compensation circuit is by Positive and Negative Coefficient Temperature circuit connected in series Composition, for compensating output negative temperature dependency VBE higher order term, make output that there is the reference voltage of ultra-low temperature drift；It is described just Temperature coefficient circuit includes：PMOS M1a, PMOS M1b, PMOS M2a, PMOS M2b, PMOS M3a, PMOS M3b, PMOS M8a, PMOS M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6, biasing resistor R1, divider resistance R2, NPN type three Pole pipe Q1, NPN type triode Q2, source electrode is connected and and VDD in PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a Connection, grid are connected and are connected with PMOS M1b drain electrode, PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a In drain electrode be connected successively with the source electrode in PMOS M1b, PMOS M2b, PMOS M3b, PMOS M8b, PMOS M1b's Drain electrode is connected by biasing resistor R1 with NMOS tube M4 drain electrode, PMOS M1b, PMOS M2b, PMOS M3b, PMOS All grids in M8b are connected and the grid is connected with NMOS tube M4 drain electrode, PMOS M2b drain electrode and NMOS tube M4 grid The drain electrode of pole and NMOS tube M5 connects, and NMOS tube M5 is connected with the grid in NMOS tube M6, PMOS M3b drain electrode and NMOS Grid in pipe M6 is connected with drain electrode, and NMOS tube M4 is connected with source electrode in NMOS tube M6 and in the source electrode and NPN type triode Q2 Base stage connected with colelctor electrode, the emitter stage in N-type triode Q2 passes through divider resistance R2 connections publicly GND, NMOS tube M5 Source electrode be connected with the base stage in N-type triode Q1 and colelctor electrode, emitter stage in N-type triode Q1 connection publicly GND.
Further, the negative temperature parameter circuit includes：PMOS M7a, PMOS M7b, PMOS M9a, PMOS Source electrode in M9b, NPN type triode Q3, resistance R3, resistance R4, the PMOS M7a, PMOS M9a is connected and connected with VDD Connect, grid is also connected and is connected with PMOS M7b drain electrode, and PMOS M7b drain electrode is connected with resistance R4 one end, resistance R4 Other end connection PMOS M7b, the grid in PMOS M9b and base stage and colelctor electrode in NPN type triode Q3, NPN Emitter stage in type triode Q3 meets publicly GND by resistance R3.
Further, described high order compensation circuit includes：PNP type triode Q4, PNP type triode Q5, resistance R5a, Resistance R5b, resistance R6, resistance R7, the described PMOS M8b of NMOS tube M10, resistance R7 one end connection drain electrode and Described PMOS M9b drain electrode, the resistance R7 other end are connected in resistance R5a, resistance R5b one end and NMOS tube M10 Grid and drain electrode, the source electrode in NMOS tube M10 connect publicly GND, resistance R5a another termination PNP type triode Q5 collection Electrode, colelctor electrode and base stage in resistance R5b another termination PNP type triode Q4, the base stage in PNP type triode Q4, Q5 It is connected, the emitter stage in PNP type triode Q4 meets publicly GND, and the emitter stage in PNP type triode Q5 is connect by resistance R6 Publicly GND.
Beneficial effects of the present invention：Output reference voltage is reduced using without operational amplifier high-order compensation reference circuit Temperature coefficient, cascode structure current mirror improve the PSRR of output reference voltage（PSRR）.
Brief description of the drawings
The present invention is described in further detail with reference to the accompanying drawings and detailed description：
Fig. 1 is the circuit structure diagram of band-gap reference circuit in the prior art；
Fig. 2 is the circuit structure diagram of the present invention.
Embodiment
As shown in Fig. 2 a kind of band-gap reference circuit of no amplifier high-order temperature drift compensation, including it is PTC circuit, negative Temperature coefficient circuit and high order compensation circuit, PTC circuit vary with temperature positively related electric current, subzero temperature for generation Degree coefficient circuit is used to produce the negative temperature parameter current for varying with temperature negative correlation, and high order compensation circuit is by positive negative temperature system Number circuit connected in series composition, for compensating output negative temperature dependency VBE higher order term, make output that there is the benchmark electricity of ultra-low temperature drift Pressure；The PTC circuit includes：PMOS M1a, PMOS M1b, PMOS M2a, PMOS M2b, PMOS M3a, PMOS M3b, PMOS M8a, PMOS M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6, biasing resistor R1, divider resistance R2, NPN type triode Q1, NPN type triode Q2, source electrode in PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a It is connected and is connected with VDD, grid is connected and is connected with PMOS M1b drain electrode, PMOS M1a, PMOS M2a, PMOS Drain electrode in M3a, PMOS M8a connects with the source electrode in PMOS M1b, PMOS M2b, PMOS M3b, PMOS M8b successively Connect, PMOS M1b drain electrode is connected by biasing resistor R1 with NMOS tube M4 drain electrode, PMOS M1b, PMOS M2b, PMOS All grids in pipe M3b, PMOS M8b are connected and the grid is connected with NMOS tube M4 drain electrode, PMOS M2b drain electrode and The drain electrode of NMOS tube M4 grid and NMOS tube M5 connects, and NMOS tube M5 is connected with the grid in NMOS tube M6, PMOS M3b Drain electrode and the grid in NMOS tube M6 and drain electrode be connected, NMOS tube M4 is connected with source electrode in NMOS tube M6 and the source electrode and NPN Base stage in type triode Q2 connects with colelctor electrode, the emitter stage in N-type triode Q2 by divider resistance R2 connections publicly GND, NMOS tube M5 source electrode are connected with the base stage in N-type triode Q1 and colelctor electrode, the emitter stage connection in N-type triode Q1 Publicly GND.
Branch's biasing circuit is included in PTC circuit, the biasing circuit is by forming cascode structure Bias PMOS pipe M1a/M1b, biasing resistor R1 and biasing NMOS tube M4 form.Bias PMOS pipe M1a/M1b and cascade Current mirror PMOS M2a/M2b, M3a/M3b is in parallel, i.e., grid is corresponding is connected；Biasing resistor R1 provides for PMOS M1a/M1b Bias grid voltage；NMOS tube M4 biasing grid voltage is provided by middle branch PMOS M2b drain electrode, while this biasing circuit is just Temperature coefficient circuit provides negative-feedback, makes A2, and B2 points voltage is more stablized.In A2, under B2 point voltages are equal, by divider resistance R2 Effect, triode Q1 base emitter voltage VBE-Q1With triode Q2 base emitter voltages VBE-Q2Produce voltage difference △VBE.△ V are known by the feature of transistorBEWith PTAT, and then positive temperature coefficient electric current △ V are producedBE/R2.Altogether Source in the presence of bank tube, A1, B1 point voltage and A2, B2 point voltage difference approximately equal, so reduces channel length modulation altogether The influence of effect, influence of the output reference electric current with mains voltage variations is reduced, that is, improve the power supply of output reference electric current Rejection ratio（PSRR）.
The negative temperature parameter circuit includes：PMOS M7a, PMOS M7b, PMOS M9a, PMOS M9b, NPN type Source electrode in triode Q3, resistance R3, resistance R4, the PMOS M7a, PMOS M9a is connected and is connected with VDD, grid It is connected and is connected with PMOS M7b drain electrode, PMOS M7b drain electrode is connected with resistance R4 one end, the resistance R4 other end Connect PMOS M7b, the grid in PMOS M9b and base stage and colelctor electrode in NPN type triode Q3, NPN type triode Emitter stage in Q3 meets publicly GND by resistance R3.A PN with negative temperature coefficient is produced on NPN type triode Q3 Junction voltage VBE, negative temperature coefficient is changed by regulation resistance R3.
Described high order compensation circuit includes：PNP type triode Q4, PNP type triode Q5, resistance R5a, resistance R5b, electricity Hinder R6, resistance R7, the drain electrode of the PMOS M8b described in NMOS tube M10, the resistance R7 one end connection and described PMOS Pipe M9b drain electrode, resistance R7 other end connection resistance R5a, resistance R5b one end and the grid in NMOS tube M10 and leakage Pole, the source electrode in NMOS tube M10 connect publicly GND, resistance R5a another termination PNP type triode Q5 colelctor electrode, resistance Colelctor electrode and base stage in R5b another termination PNP type triode Q4, the base stage in PNP type triode Q4, Q5 are connected, positive-negative-positive Emitter stage in triode Q4 meets publicly GND, and the emitter stage in PNP type triode Q5 meets publicly GND by resistance R6.
The electric current of generation negative temperature coefficient is copied this is had into positive and negative temperature into multiple proportion by current mirror After two parts electric current superposition of degree characteristic high-order compensation is done to Higher-Order Circuit.Wherein, PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a breadth length ratio（W/L）For N:1:1:M, corresponding PMOS M1b, PMOS M2b, PMOS M3b, PMOS Pipe M8b breadth length ratio（W/L）Also it is N:1:1:M；PMOS M7a, PMOS M9a breadth length ratio（W/L）For 1:K, it is corresponding PMOS M7b, PMOS M9b breadth length ratio（W/L）Also it is 1:K.High order compensation circuit module passes through PNP type triode Q4/PNP Type triode Q5 is produced and VBEThe opposite expression formula of higher order term symbol, meanwhile, electric current has negative temperature characteristic on NMOS tube M10 pipes To do higher order compensation, reach and offset high-order nonlinear component in positive temperature coefficient electric current.Regulation resistance R5a/ resistance R5b makes two Resistance R5a is equal with electric current on resistance R5b；NMOS tube M10 effect is to pin down the voltage of C points to adjust the temperature of compensation higher order term Spend coefficient value.
Described above is the preferred embodiment of the present invention, can not limit the right model of the present invention with this certainly Enclose, it is noted that for those skilled in the art, technical scheme is modified or waited With replacing, without departure from the protection domain of technical solution of the present invention.

Claims (1)

  1. A kind of 1. band-gap reference circuit of no amplifier high-order temperature drift compensation, it is characterised in that：Including PTC circuit, subzero temperature Degree coefficient circuit and high order compensation circuit, PTC circuit vary with temperature positively related electric current, negative temperature for generation Coefficient circuit is used to produce the negative temperature parameter current for varying with temperature negative correlation, and high order compensation circuit is by Positive and Negative Coefficient Temperature Circuit connected in series forms, and for compensating output negative temperature dependency VBE higher order term, output is had the benchmark electricity of ultra-low temperature drift Pressure；The PTC circuit includes：PMOS M1a, PMOS M1b, PMOS M2a, PMOS M2b, PMOS M3a, PMOS M3b, PMOS M8a, PMOS M8b, NMOS tube M4, NMOS tube M5, NMOS tube M6, biasing resistor R1, divider resistance R2, NPN type triode Q1, NPN type triode Q2, source electrode in PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a It is connected and is connected with VDD, grid is connected and is connected with PMOS M1b drain electrode, PMOS M1a, PMOS M2a, PMOS Drain electrode in M3a, PMOS M8a connects with the source electrode in PMOS M1b, PMOS M2b, PMOS M3b, PMOS M8b successively Connect, PMOS M1b drain electrode is connected by biasing resistor R1 with NMOS tube M4 drain electrode, PMOS M1b, PMOS M2b, PMOS All grids in pipe M3b, PMOS M8b are connected and the grid is connected with NMOS tube M4 drain electrode, PMOS M2b drain electrode and The drain electrode of NMOS tube M4 grid and NMOS tube M5 connects, and NMOS tube M5 is connected with the grid in NMOS tube M6, PMOS M3b Drain electrode and the grid in NMOS tube M6 and drain electrode be connected, NMOS tube M4 is connected with source electrode in NMOS tube M6 and the source electrode and NPN Base stage in type triode Q2 connects with colelctor electrode, and the emitter stage in NPN type triode Q2 is public by divider resistance R2 connections Ground GND, NMOS tube M5 source electrode are connected with the base stage in NPN type triode Q1 and colelctor electrode, the transmitting in NPN type triode Q1 Pole connects publicly GND；The negative temperature parameter circuit includes：PMOS M7a, PMOS M7b, PMOS M9a, PMOS Source electrode in M9b, NPN type triode Q3, resistance R3, resistance R4, the PMOS M7a, PMOS M9a is connected and connected with VDD Connect, grid is also connected and is connected with PMOS M7b drain electrode, and PMOS M7b drain electrode is connected with resistance R4 one end, resistance R4 Other end connection PMOS M7b, the grid in PMOS M9b and base stage and colelctor electrode in NPN type triode Q3, NPN Emitter stage in type triode Q3 meets publicly GND by resistance R3；High order compensation circuit includes：PNP type triode Q4, PNP Type triode Q5, resistance R5a, resistance R5b, resistance R6, resistance R7, NMOS tube M10, resistance R7 one end connection are described PMOS M8b drain electrode and described PMOS M9b drain electrode, resistance R7 other end connection resistance R5a, resistance R5b One end and the grid in NMOS tube M10 and drain electrode, the source electrode in NMOS tube M10 connect publicly GND, the resistance R5a other end Connect PNP type triode Q5 colelctor electrode, colelctor electrode and base stage in resistance R5b another termination PNP type triode Q4, positive-negative-positive Base stage in triode Q4, Q5 is connected, and the emitter stage in PNP type triode Q4 meets publicly GND, in PNP type triode Q5 Emitter stage meets publicly GND by resistance R6, wherein, PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a Breadth length ratio is N:1:1:M, corresponding PMOS M1b, PMOS M2b, PMOS M3b, PMOS M8b breadth length ratio are also N:1: 1:M；PMOS M7a, PMOS M9a breadth length ratio are 1:K, corresponding PMOS M7b, PMOS M9b breadth length ratio are also 1: K, high order compensation circuit module is produced by PNP type triode Q4/PNP type triodes Q5 and VBEThe opposite expression of higher order term symbol Formula, meanwhile, electric current has negative temperature characteristic to do higher order compensation on NMOS tube M10 pipes, reaches and offsets positive temperature coefficient electric current Middle high-order nonlinear component, regulation resistance R5a/ resistance R5b make two resistance R5a equal with electric current on resistance R5b；NMOS tube M10 Effect be to pin down the voltage of C points to adjust the temperature coefficient value of compensation higher order term.
CN201610246332.7A 2016-04-20 2016-04-20 A kind of band-gap reference circuit of no amplifier high-order temperature drift compensation Expired - Fee Related CN105786077B (en)

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CN109960308A (en) * 2017-12-25 2019-07-02 北京兆易创新科技股份有限公司 A kind of voltage-reference
CN108052154B (en) * 2018-02-05 2023-08-01 成都信息工程大学 High-order low-temperature drift band gap reference circuit without operational amplifier
CN109407747A (en) * 2018-12-19 2019-03-01 佛山臻智微芯科技有限公司 A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation
CN111176364A (en) * 2020-01-14 2020-05-19 中国科学院微电子研究所 High-order temperature compensation circuit and low-temperature drift voltage reference circuit
CN113050743B (en) * 2021-03-25 2022-03-08 电子科技大学 Current reference circuit capable of outputting multiple temperature coefficients
CN113703511B (en) * 2021-08-30 2022-09-09 上海川土微电子有限公司 Band-gap reference voltage source with ultralow temperature drift
CN115016591B (en) * 2022-06-16 2024-03-08 上海泰矽微电子有限公司 Band gap reference circuit with low temperature drift
CN115877908B (en) * 2023-03-02 2023-04-28 盈力半导体(上海)有限公司 Band gap voltage reference circuit, second-order nonlinear correction circuit and chip thereof

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