CN105786077A - High-order temperature drift compensation band-gap reference circuit without operational amplifier - Google Patents
High-order temperature drift compensation band-gap reference circuit without operational amplifier Download PDFInfo
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- CN105786077A CN105786077A CN201610246332.7A CN201610246332A CN105786077A CN 105786077 A CN105786077 A CN 105786077A CN 201610246332 A CN201610246332 A CN 201610246332A CN 105786077 A CN105786077 A CN 105786077A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a high-order temperature drift compensation band-gap reference circuit without an operational amplifier. The high-order temperature drift compensation band-gap reference circuit comprises a positive temperature coefficient circuit, a negative temperature coefficient circuit and a high-order compensation circuit, wherein the positive temperature coefficient circuit comprises a PMOS transistor M1a, a PMOS transistor M1b, a PMOS transistor M2a, a PMOS transistor M2b, a PMOS transistor M3a, a PMOS transistor M3b, a PMOS transistor M8a, a PMOS transistor M8b, an NMOS transistor M4, an NMOS transistor M5 and an NMOS transistor M6; the negative temperature coefficient circuit comprises a PMOS transistor M7a, a PMOS transistor M7b, a PMOS transistor M9a, a PMOS transistor M9b and an NPN type triode Q3. The high-order temperature drift compensation band-gap reference circuit without the operational amplifier is used to lower the temperature coefficient of output reference voltage, and a cascade-structure current mirror increased the power supply rejection ratio (PSRR) of the output reference voltage.
Description
Technical field
The present invention relates to a kind of band-gap reference circuit.
Background technology
Band-gap reference circuit is as high-precision ADC, DAC and the basic module in telecommunication circuit, and it provides voltage source or a current source accurately for other circuit modules.Band gap reference is unit module important in integrated circuit all the time, and its temperature characterisitic and anti-noise jamming ability are the key factors having influence on integrated circuit precision and performance.It is the reference voltage of about 50ppm/ DEG C that traditional band-gap reference circuit produces temperature coefficient in the temperature range of 0～70 DEG C
In recent years, propose multiple different high-order compensation technology both at home and abroad to improve the temperature characterisitic of reference circuit, the high-order compensation technology occurred at present includes: exponential curve compensation technique, section linear compensating technology, high-order temperature characteristic compensation method etc. based on resistance, such as, YingCao etc. propose and utilize dynamic basis leakage compensation technology to carry out high-order compensation, make reference voltage temperature coefficient within the scope of-40～125 DEG C reach 15ppm/ DEG C；It is high-order temperature compensated that GongXiao-feng etc. utilize different resistance materials to carry out, and the range of temperature of circuit is big, but the temperature coefficient produced is significantly high；LeilaKoushaeian etc. utilize current mirror and operational amplifier to reduce temperature coefficient, and its temperature coefficient is 4.7ppm/ DEG C；
Traditional band-gap reference circuit is as it is shown in figure 1, the ultimate principle of its temperature-compensating is the voltage having opposite temperature coefficients by two is added with suitable weight, and final acquisition has temperature independent reference voltage, and its formula is:
Wherein, VBE,Q2It is the emitter to base voltage of transistor Q2, is the negative temperature coefficient voltage being inversely proportional to absolute temperature；R2, R3 are resistance；VTIt is single order negative temperature coefficient voltage,, K is Boltzmann constant, q be unit charge electricity, T is absolute temperature.By accurate adjustmentRatio, it is possible to allow the temperature coefficient of output be cancelled completely, thus obtaining temperature independent voltage.
Having drawbacks in that due to transistor V of traditional reference voltage sourceBENot being linear relationship with temperature, except single order item also has high-order nonlinear item, and traditional band-gap reference is only to VBESingle order item compensated, the V of its negative temperature dependencyBEHigher order term is not compensated, thus causing that the temperature characterisitic of circuit is poor.
High-order compensation method for occurring at present mostly adopts operational amplifier to go to realize, or only compensate for VBESingle order and part higher order term, the performance of operational amplifier itself can reduce along with the change of temperature.Simultaneously because the output voltage of band-gap reference is brought very big impact by the offset voltage that operational amplifier produces, therefore, temperature coefficient still can not drop to very low.
Summary of the invention
In order to solve the deficiency that prior art exists, it is an object of the invention to provide the band-gap reference circuit of a kind of temperature drift compensation of high-order without amplifier.This circuit uses the temperature coefficient reducing output reference voltage without operational amplifier high-order compensation reference circuit, and cascode structure current mirror improves the PSRR (PSRR) of output reference voltage.
For achieving the above object, the technical solution adopted in the present invention is:
A kind of band-gap reference circuit of the temperature drift compensation of high-order without amplifier, including PTC circuit, negative temperature parameter circuit and high order compensation circuit, PTC circuit varies with temperature positively related electric current for generation, negative temperature parameter circuit is for producing to vary with temperature the negative temperature parameter current of negative correlation, high order compensation circuit is made up of Positive and Negative Coefficient Temperature circuit connected in series, it is used for compensating the higher order term of output negative temperature dependency VBE, makes output have the reference voltage of ultra-low temperature drift；nullDescribed PTC circuit includes: PMOS M1a、PMOS M1b、PMOS M2a、PMOS M2b、PMOS M3a、PMOS M3b、PMOS M8a、PMOS M8b，NMOS tube M4、NMOS tube M5、NMOS tube M6，Biasing resistor R1、Divider resistance R2，NPN type triode Q1、NPN type triode Q2，PMOS M1a、PMOS M2a、PMOS M3a、In PMOS M8a, source electrode is connected and is connected with VDD，Grid is connected and is connected with the drain electrode of PMOS M1b，PMOS M1a、PMOS M2a、PMOS M3a、Drain electrode in PMOS M8a successively with PMOS M1b、PMOS M2b、PMOS M3b、Source electrode in PMOS M8b connects，The drain electrode of PMOS M1b is connected by the drain electrode of biasing resistor R1 and NMOS tube M4，PMOS M1b、PMOS M2b、PMOS M3b、All grids in PMOS M8b are connected and this grid is connected with the drain electrode of NMOS tube M4，The drain electrode of PMOS M2b is connected with the drain electrode of the grid of NMOS tube M4 and NMOS tube M5，NMOS tube M5 is connected with the grid in NMOS tube M6，The drain electrode of PMOS M3b is connected with the grid in NMOS tube M6 and drain electrode，In NMOS tube M4 and NMOS tube M6 source electrode be connected and this source electrode be connected with the base stage in NPN type triode Q2 and colelctor electrode，Emitter stage in N-type audion Q2 connects GND publicly by divider resistance R2，The source electrode of NMOS tube M5 is connected with the base stage in N-type audion Q1 and colelctor electrode，Emitter stage in N-type audion Q1 connects GND publicly.
Further, described negative temperature parameter circuit includes: PMOS M7a, PMOS M7b, PMOS M9a, PMOS M9b, NPN type triode Q3, resistance R3, resistance R4, described PMOS M7a, source electrode in PMOS M9a is connected and is connected with VDD, grid is also connected and is connected with the drain electrode of PMOS M7b, the drain electrode of PMOS M7b is connected with one end of resistance R4, the other end of resistance R4 connects PMOS M7b, grid in PMOS M9b and the base stage in NPN type triode Q3 and colelctor electrode, emitter stage in NPN type triode Q3 meets GND publicly by resistance R3.
nullFurther，Described high order compensation circuit includes: PNP type triode Q4、PNP type triode Q5，Resistance R5a、Resistance R5b、Resistance R6、Resistance R7，NMOS tube M10，One end of described resistance R7 connects the drain electrode of described PMOS M8b and the drain electrode of described PMOS M9b，The other end of resistance R7 connects resistance R5a、Grid in one end of resistance R5b and NMOS tube M10 and drain electrode，Source electrode in NMOS tube M10 meets GND publicly，The colelctor electrode of another termination PNP type triode Q5 of resistance R5a，Another of resistance R5b terminates the colelctor electrode in PNP type triode Q4 and base stage，PNP type triode Q4、Base stage in Q5 is connected，Emitter stage in PNP type triode Q4 meets GND publicly，Emitter stage in PNP type triode Q5 meets GND publicly by resistance R6.
Beneficial effects of the present invention: using the temperature coefficient reducing output reference voltage without operational amplifier high-order compensation reference circuit, cascode structure current mirror improves the PSRR (PSRR) of output reference voltage.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Fig. 1 is the circuit structure diagram of band-gap reference circuit in prior art；
Fig. 2 is the circuit structure diagram of the present invention.
Detailed description of the invention
As shown in Figure 2, a kind of band-gap reference circuit of the temperature drift compensation of high-order without amplifier, including PTC circuit, negative temperature parameter circuit and high order compensation circuit, PTC circuit varies with temperature positively related electric current for generation, negative temperature parameter circuit is for producing to vary with temperature the negative temperature parameter current of negative correlation, high order compensation circuit is made up of Positive and Negative Coefficient Temperature circuit connected in series, it is used for compensating the higher order term of output negative temperature dependency VBE, makes output have the reference voltage of ultra-low temperature drift；nullDescribed PTC circuit includes: PMOS M1a、PMOS M1b、PMOS M2a、PMOS M2b、PMOS M3a、PMOS M3b、PMOS M8a、PMOS M8b，NMOS tube M4、NMOS tube M5、NMOS tube M6，Biasing resistor R1、Divider resistance R2，NPN type triode Q1、NPN type triode Q2，PMOS M1a、PMOS M2a、PMOS M3a、In PMOS M8a, source electrode is connected and is connected with VDD，Grid is connected and is connected with the drain electrode of PMOS M1b，PMOS M1a、PMOS M2a、PMOS M3a、Drain electrode in PMOS M8a successively with PMOS M1b、PMOS M2b、PMOS M3b、Source electrode in PMOS M8b connects，The drain electrode of PMOS M1b is connected by the drain electrode of biasing resistor R1 and NMOS tube M4，PMOS M1b、PMOS M2b、PMOS M3b、All grids in PMOS M8b are connected and this grid is connected with the drain electrode of NMOS tube M4，The drain electrode of PMOS M2b is connected with the drain electrode of the grid of NMOS tube M4 and NMOS tube M5，NMOS tube M5 is connected with the grid in NMOS tube M6，The drain electrode of PMOS M3b is connected with the grid in NMOS tube M6 and drain electrode，In NMOS tube M4 and NMOS tube M6 source electrode be connected and this source electrode be connected with the base stage in NPN type triode Q2 and colelctor electrode，Emitter stage in N-type audion Q2 connects GND publicly by divider resistance R2，The source electrode of NMOS tube M5 is connected with the base stage in N-type audion Q1 and colelctor electrode，Emitter stage in N-type audion Q1 connects GND publicly.
Comprising branch's biasing circuit in PTC circuit, described biasing circuit is made up of bias PMOS pipe M1a/M1b, the biasing resistor R1 and biasing NMOS tube M4 forming cascode structure.Bias PMOS pipe M1a/M1b is in parallel with common-source common-gate current mirror PMOS M2a/M2b, M3a/M3b, and namely grid correspondence is connected；Biasing resistor R1 provides biasing grid voltage for PMOS M1a/M1b；The biasing grid voltage of NMOS tube M4 is provided by the drain electrode of middle branch PMOS M2b, and this biasing circuit provides negative feedback for PTC circuit simultaneously, makes A2, B2 point voltage more stable.Under A2, B2 point voltage is equal, by the effect of divider resistance R2, the base emitter voltage V of audion Q1BE-Q1With audion Q2 base emitter voltage VBE-Q2Produce voltage difference △ VBE.△ V is known by the feature of transistorBEWith PTAT, and then produce positive temperature coefficient electric current △ VBE/R2.Under the effect of cascade pipe, A1, B1 point voltage and A2, B2 point voltage is approximately equal respectively, which reduce the impact of channel-length modulation, reduce the impact with mains voltage variations of the output reference electric current, namely improve the PSRR (PSRR) of output reference electric current.
Described negative temperature parameter circuit includes: PMOS M7a, PMOS M7b, PMOS M9a, PMOS M9b, NPN type triode Q3, resistance R3, resistance R4, source electrode in described PMOS M7a, PMOS M9a is connected and is connected with VDD, grid is also connected and is connected with the drain electrode of PMOS M7b, the drain electrode of PMOS M7b is connected with one end of resistance R4, the other end of resistance R4 connects the grid in PMOS M7b, PMOS M9b and the base stage in NPN type triode Q3 and colelctor electrode, and the emitter stage in NPN type triode Q3 meets GND publicly by resistance R3.NPN type triode Q3 produces a PN junction voltage V with negative temperature coefficientBE, change negative temperature coefficient by regulating resistance R3.
nullDescribed high order compensation circuit includes: PNP type triode Q4、PNP type triode Q5，Resistance R5a、Resistance R5b、Resistance R6、Resistance R7，NMOS tube M10，One end of described resistance R7 connects the drain electrode of described PMOS M8b and the drain electrode of described PMOS M9b，The other end of resistance R7 connects resistance R5a、Grid in one end of resistance R5b and NMOS tube M10 and drain electrode，Source electrode in NMOS tube M10 meets GND publicly，The colelctor electrode of another termination PNP type triode Q5 of resistance R5a，Another of resistance R5b terminates the colelctor electrode in PNP type triode Q4 and base stage，PNP type triode Q4、Base stage in Q5 is connected，Emitter stage in PNP type triode Q4 meets GND publicly，Emitter stage in PNP type triode Q5 meets GND publicly by resistance R6.
By current mirror, the electric current producing negative temperature coefficient is become to replicate out with multiple proportion, after this is had two parts electric current superposition of positive and negative temperature characterisitic, do high-order compensation to Higher-Order Circuit.Wherein, PMOS M1a, PMOS M2a, PMOS M3a, PMOS M8a breadth length ratio (W/L) be N:1:1:M, corresponding PMOS M1b, PMOS M2b, PMOS M3b, PMOS M8b breadth length ratio (W/L) be also N:1:1:M；PMOS M7a, PMOS M9a breadth length ratio (W/L) be 1:K, corresponding PMOS M7b, the breadth length ratio (W/L) of PMOS M9b are also 1:K.High order compensation circuit module is produced and V by PNP type triode Q4/PNP type audion Q5BEThe expression formula that higher order term symbol is contrary, meanwhile, on NMOS tube M10 pipe, electric current has negative temperature characteristic to do higher order compensation, reaches to offset high-order nonlinear component in positive temperature coefficient electric current.Regulating resistance R5a/ resistance R5b makes electric current on two resistance R5a and resistance R5b equal；The effect of NMOS tube M10 is that the voltage pining down C point regulates the temperature coefficient value compensating higher order term.
The above is the preferred embodiment of the present invention; certainly the interest field of the present invention can not be limited with this; should be understood that; for those skilled in the art; technical scheme is modified or equivalent replacement, without departure from the protection domain of technical solution of the present invention.
Claims (3)
1. the band-gap reference circuit without amplifier high-order temperature drift compensation, it is characterized in that: include PTC circuit, negative temperature parameter circuit and high order compensation circuit, PTC circuit varies with temperature positively related electric current for generation, negative temperature parameter circuit is for producing to vary with temperature the negative temperature parameter current of negative correlation, high order compensation circuit is made up of Positive and Negative Coefficient Temperature circuit connected in series, it is used for compensating the higher order term of output negative temperature dependency VBE, makes output have the reference voltage of ultra-low temperature drift；nullDescribed PTC circuit includes: PMOS M1a、PMOS M1b、PMOS M2a、PMOS M2b、PMOS M3a、PMOS M3b、PMOS M8a、PMOS M8b，NMOS tube M4、NMOS tube M5、NMOS tube M6，Biasing resistor R1、Divider resistance R2，NPN type triode Q1、NPN type triode Q2，PMOS M1a、PMOS M2a、PMOS M3a、In PMOS M8a, source electrode is connected and is connected with VDD，Grid is connected and is connected with the drain electrode of PMOS M1b，PMOS M1a、PMOS M2a、PMOS M3a、Drain electrode in PMOS M8a successively with PMOS M1b、PMOS M2b、PMOS M3b、Source electrode in PMOS M8b connects，The drain electrode of PMOS M1b is connected by the drain electrode of biasing resistor R1 and NMOS tube M4，PMOS M1b、PMOS M2b、PMOS M3b、All grids in PMOS M8b are connected and this grid is connected with the drain electrode of NMOS tube M4，The drain electrode of PMOS M2b is connected with the drain electrode of the grid of NMOS tube M4 and NMOS tube M5，NMOS tube M5 is connected with the grid in NMOS tube M6，The drain electrode of PMOS M3b is connected with the grid in NMOS tube M6 and drain electrode，In NMOS tube M4 and NMOS tube M6 source electrode be connected and this source electrode be connected with the base stage in NPN type triode Q2 and colelctor electrode，Emitter stage in N-type audion Q2 connects GND publicly by divider resistance R2，The source electrode of NMOS tube M5 is connected with the base stage in N-type audion Q1 and colelctor electrode，Emitter stage in N-type audion Q1 connects GND publicly.
null2. the band-gap reference circuit of the temperature drift compensation of high-order without amplifier according to claim 1，It is characterized in that: described negative temperature parameter circuit includes: PMOS M7a、PMOS M7b、PMOS M9a、PMOS M9b，NPN type triode Q3，Resistance R3、Resistance R4，Described PMOS M7a、Source electrode in PMOS M9a is connected and is connected with VDD，Grid is also connected and is connected with the drain electrode of PMOS M7b，The drain electrode of PMOS M7b is connected with one end of resistance R4，The other end of resistance R4 connects PMOS M7b、Grid in PMOS M9b and the base stage in NPN type triode Q3 and colelctor electrode，Emitter stage in NPN type triode Q3 meets GND publicly by resistance R3.
null3. the band-gap reference circuit of the temperature drift compensation of high-order without amplifier according to claim 2，It is characterized in that: high order compensation circuit includes: PNP type triode Q4、PNP type triode Q5，Resistance R5a、Resistance R5b、Resistance R6、Resistance R7，NMOS tube M10，One end of described resistance R7 connects the drain electrode of described PMOS M8b and the drain electrode of described PMOS M9b，The other end of resistance R7 connects resistance R5a、Grid in one end of resistance R5b and NMOS tube M10 and drain electrode，Source electrode in NMOS tube M10 meets GND publicly，The colelctor electrode of another termination PNP type triode Q5 of resistance R5a，Another of resistance R5b terminates the colelctor electrode in PNP type triode Q4 and base stage，PNP type triode Q4、Base stage in Q5 is connected，Emitter stage in PNP type triode Q4 meets GND publicly，Emitter stage in PNP type triode Q5 meets GND publicly by resistance R6.
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Cited By (10)
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| CN109407747A (en) * | 2018-12-19 | 2019-03-01 | 佛山臻智微芯科技有限公司 | A kind of band-gap reference circuit of the high PSRR of second-order temperature compensation |
| CN109960308A (en) * | 2017-12-25 | 2019-07-02 | 北京兆易创新科技股份有限公司 | A kind of voltage-reference |
| CN111176364A (en) * | 2020-01-14 | 2020-05-19 | 中国科学院微电子研究所 | High-order temperature compensation circuit and low-temperature drift voltage reference circuit |
| CN113050743A (en) * | 2021-03-25 | 2021-06-29 | 电子科技大学 | Current reference circuit capable of outputting multiple temperature coefficients |
| CN113703511A (en) * | 2021-08-30 | 2021-11-26 | 上海川土微电子有限公司 | Band-gap reference voltage source with ultralow temperature drift |
| CN115016591A (en) * | 2022-06-16 | 2022-09-06 | 上海泰矽微电子有限公司 | Band gap reference circuit with low temperature drift |
| CN115877908A (en) * | 2023-03-02 | 2023-03-31 | 盈力半导体(上海)有限公司 | Band gap voltage reference circuit and second-order nonlinear correction circuit and chip thereof |
| CN116301179A (en) * | 2023-03-23 | 2023-06-23 | 宁波大学 | Low temperature coefficient reference current source circuit |
| CN108052154B (en) * | 2018-02-05 | 2023-08-01 | 成都信息工程大学 | High-order low-temperature drift band gap reference circuit without operational amplifier |
| CN116301179B (en) * | 2023-03-23 | 2024-06-07 | 宁波大学 | Low temperature coefficient reference current source circuit |
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| CN116301179A (en) * | 2023-03-23 | 2023-06-23 | 宁波大学 | Low temperature coefficient reference current source circuit |
| CN116301179B (en) * | 2023-03-23 | 2024-06-07 | 宁波大学 | Low temperature coefficient reference current source circuit |
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