CN113050743A - Current reference circuit capable of outputting multiple temperature coefficients - Google Patents

Current reference circuit capable of outputting multiple temperature coefficients Download PDF

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CN113050743A
CN113050743A CN202110318024.1A CN202110318024A CN113050743A CN 113050743 A CN113050743 A CN 113050743A CN 202110318024 A CN202110318024 A CN 202110318024A CN 113050743 A CN113050743 A CN 113050743A
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CN113050743B (en
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张有润
赵乙蔷
程雨凡
康仕杰
章登福
李逸康
甄少伟
张波
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University of Electronic Science and Technology of China
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

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Abstract

The invention discloses a current reference circuit for outputting various temperature coefficients, and belongs to the technical field of analog integrated circuits. Includes a positive temperature coefficient (PTAT) current generating circuit, a negative feedback loop, a negative temperature Coefficient (CTAT) current generating circuit, a plurality of temperature coefficient current generating circuits, and a start-up circuit. By utilizing the linear superposition of the PTAT current and the CTAT current and adjusting the proportionality coefficient, the current reference sources with various temperature coefficients can be obtained, and the requirements of various different circuits can be met. A negative feedback loop in the PTAT current generation circuit is directly used for a current mirror structure of a triode, so that the number of transistors used in the circuit is effectively reduced, and the PTAT current generation circuit is suitable for low power supply voltage power supply; the negative feedback loop in the PTAT current generating circuit is also directly used on the CTAT current generating branch circuit instead of two independent structures, thereby effectively reducing the current branch circuit in the circuit, saving the area and the power consumption.

Description

Current reference circuit capable of outputting multiple temperature coefficients
Technical Field
The invention belongs to the technical field of analog integrated circuits, and particularly relates to a current reference circuit for outputting various temperature coefficients.
Background
The reference source circuit plays an important role in the design of analog integrated circuits, and is widely applied to various chips, such as digital-to-analog converters, power management chips, sensor chips, detection chips, and the like. The reference source circuit is a very important structure in many circuits, and the performance of a circuit system is directly influenced by the precision and stability of the current reference source. In addition to the commonly used zero temperature coefficient voltage reference source, current reference is also important in analog integrated circuit design. Current references are more popular in analog circuits with more complex wiring, since there is no loss of current over long metal lines, but loss of voltage.
Various forms of current reference sources are typically required in analog integrated circuits. A positive temperature coefficient (PTAT) current is used as an amplifier bias to obtain constant gm, a negative temperature Coefficient (CTAT) current is used as a temperature sense, a zero temperature coefficient current is used as a filter, and to generate a voltage reference. Therefore, the invention designs the current reference source circuit which outputs various temperature coefficients. The traditional current reference circuit usually needs to design a PTAT current generating circuit and a CTAT current generating circuit separately, has a more complex structure and larger power consumption, and has a simple structure, relatively fewer tubes and flexible parameter design. Meanwhile, the circuit can also generate a reference voltage source with zero temperature coefficient, and the reference voltage can be taken at will. The circuit structure has important significance in a low-voltage and low-power-consumption circuit.
Disclosure of Invention
Aiming at the problems of various performance requirements, complex structure and large power consumption of the current reference source, the invention provides a current reference circuit for outputting various temperature coefficients. The negative feedback loop of the PTAT current generating circuit is used as a current mirror structure of the triode, so that the number of the tubes is saved, and the PTAT current generating circuit is suitable for low power supply voltage power supply; a negative feedback loop in the PTAT current generating circuit is used on a branch circuit generated by CTAT current, the complexity of the circuit is not increased, the current branch circuit is effectively reduced, the area is saved, and the power consumption is reduced.
The technical scheme of the invention is as follows:
a current reference circuit outputting a plurality of temperature coefficients. The device comprises a starting circuit, a PTAT current generating circuit, a negative feedback loop, a CTAT current generating circuit and a plurality of temperature coefficient current generating circuits.
The starting circuit comprises a third NPN type triode Q3, a fourth resistor R4 and a seventh N type MOS tube M7.
The base electrode of the third NPN type triode Q3 is connected with the base electrode of the second NPN type triode Q2, the emitting electrode of the third NPN type triode Q3 is grounded, the collecting electrode of the third NPN type triode Q3 is connected with one end of a fourth resistor R4, and the other end of the fourth resistor R4 is connected with power voltage; the gate and the drain of the seventh N-type MOS transistor M7 are connected together and connected to the collector of the third NPN transistor Q3, and the source of the seventh N-type MOS transistor M7 is connected to the collector of the second NPN transistor Q2.
The PTAT current generation circuit comprises a first NPN type triode, a second NPN type triode, a first resistor, a first P type MOS tube and a second P type MOS tube.
The base electrode of the first NPN type triode is connected with the base electrode of the second NPN type triode, the emitting electrode of the first NPN type triode is connected with the first resistor, and the emitting electrode of the second NPN type triode is grounded; the other end of the first resistor is grounded.
The grid electrode of the first P-type MOS tube is connected with the grid electrode of the second P-type MOS tube, the drain electrode of the first P-type MOS tube is connected with the collector electrode of the first NPN-type triode, the drain electrode of the second P-type MOS tube is connected with the collector electrode of the second NPN-type triode, and the source electrodes of the first P-type MOS tube and the second P-type MOS tube are connected with power supply voltage; the grid electrode of the first P-type MOS tube is connected with the drain electrode of the first P-type MOS tube.
The negative feedback loop comprises a fourth N-type MOS tube and a second NPN-type triode.
The grid electrode of the fourth N-type MOS tube is connected with the collector electrode of the second NPN-type triode, and the source electrode of the low-fourth N-type MOS tube is connected with the base electrode of the second NPN-type triode.
The CTAT current generating circuit comprises a second resistor, a third P-type MOS tube, a fourth N-type MOS tube and a second NPN-type triode.
One end of the second resistor is connected with the base electrode of the second NPN type triode, and the other end of the second resistor is grounded. The drain electrode of the third P-type MOS tube is connected with the drain electrode of the fourth N-type MOS tube, and the source electrode of the third P-type MOS tube is connected with power supply voltage; the grid electrode of the third P-type MOS tube is connected with the drain electrode of the third P-type MOS tube.
The multiple temperature coefficient current generating circuit comprises a fifth P-type MOS tube, a sixth P-type MOS tube and a third resistor.
The drain electrode of the fifth P-type MOS tube is connected with the drain electrode of the sixth P-type MMOS tube, the grid electrode of the fifth P-type MOS tube is connected with the grid electrode of the first P-type MOS tube, and the grid electrode of the sixth P-type MOS tube is connected with the grid electrode of the third P-type MOS tube. The source electrode of the fifth P-type MOS tube and the source electrode of the sixth P-type MOS tube are connected with power supply voltage.
One end of the third resistor is connected with the drain electrodes of the fifth P-type MOS tube and the sixth P-type MOS tube, and the other end of the third resistor is grounded.
The invention has the beneficial effects that: the invention adopts a current superposition type reference source design, and reference currents with various temperature coefficients can be obtained only by adjusting the proportional coefficient of PTAT current and CTAT current; the negative feedback loop of the PTAT current generating circuit is directly used as the current mirror structure of the triode, so that the number of the tubes is saved, and the power supply circuit is suitable for low power supply voltage power supply; the invention directly uses the negative feedback loop of the PTAT current generating circuit on the CTAT current generating circuit, compared with the traditional structure, the PTAT current generating circuit and the CTAT current generating circuit are completely independent, thereby saving current branch circuits, saving area and reducing power consumption. In addition, the circuit can not only generate reference currents with various temperature coefficients, but also obtain reference voltage with zero temperature coefficient.
Drawings
Fig. 1 is a block diagram of a conventional architecture for generating a temperature independent voltage reference using PTAT current.
Fig. 2 is a schematic structural framework diagram of a PTAT current generation circuit according to the present invention.
Fig. 3 is a schematic diagram of a structural framework of an implementation of the triode current mirror according to the present invention.
FIG. 4 is a schematic diagram of a CTAT current generating circuit of the present invention
Fig. 5 is a schematic structural framework diagram of a current reference with a start-up circuit capable of outputting a plurality of temperature coefficients according to the present invention.
Detailed Description
The technical scheme of the invention is described in detail in the following with reference to the accompanying drawings and specific embodiments:
the invention provides a current reference circuit for outputting various temperature coefficients, which comprises a starting circuit, a PTAT current generating circuit, a negative feedback loop, a CTAT current generating circuit and various temperature coefficient current generating circuits.
As shown in fig. 5, the start-up circuit includes a third NPN transistor Q3A fourth resistor R4And seventh N type MOS transistor M7Third NPN type triode Q3The base of the transistor is connected with a second NPN type triode Q2Base electrode of the third NPN type triode Q3The emitter of the third NPN type triode Q is grounded3Collector of the resistor is connected with a fourth resistor R4One terminal of (1), a fourth resistor R4The other end of the first switch is connected with a power supply voltage; seventh N type MOS tube M7The grid electrode and the drain electrode of the transistor are connected together and connected with a third NPN type triode Q3Collector of (1), seventh N-type MOS transistor M7The source of the transistor is connected with a second NPN type triode Q2The collector electrode of (1). When the power supply VDD is powered on, current flows from the power supply through the fourth resistor R4Seventh N-type MOS transistor M7Fourth N-type MOS transistor M4A second NPN type triode Q2And flows to ground, a current path is formed, and the circuit is started. After the circuit is started, a third NPN type triode Q3Duplicate the second NPN triode Q2If the fourth resistor R is connected4The resistance value of (a) is set to be large,then the voltage is at the fourth resistor R4The voltage drop is very large, so that the seventh N-type MOS transistor M7The grid electrode potential of the seventh N-type MOS tube M is lower7The gate-source voltage difference Vgs of the seventh N-type MOS transistor M is less than the threshold voltage Vth thereof7And turning off the starting circuit.
As shown in FIG. 2, the PTAT current generating circuit includes a first resistor R1A first NPN type triode Q1A second NPN type triode Q2A first P-type MOS transistor M1Second P-type MOS transistor M2Fifth P type MOS transistor M5. First NPN type triode Q1Base and second NPN type triode Q2Are connected together, a first NPN type triode Q1Emitter of (2) is connected with a first resistor R1A second NPN type triode Q2The emitter of (2) is grounded; a first resistor R1The other end of the first and second electrodes is grounded; first P type MOS tube M1Grid and second P type MOS tube M2The grid electrodes of the first P-type MOS tube M are connected together1The drain electrode of the first NPN type triode Q is connected with the second NPN type triode Q1Collector of (1), second P-type MOS tube M2The drain electrode of the second NPN type triode Q is connected with the second NPN type triode Q2Collector of (1), first P-type MOS transistor M1And a second P-type MOS transistor M2The source of the transistor is connected with a power supply voltage; first P type MOS tube M1Grid and first P type MOS tube M1The drain electrodes of the first and second transistors are connected together; fifth P type MOS tube M5The grid electrode of the first P-type MOS tube M is connected with the first P-type MOS tube M1Grid of (1), fifth P type MOS tube M5The source level of the transistor is connected with the power voltage, and a fifth P-type MOS transistor M5The drain of the transistor is connected with the current output end. First P type MOS tube M1And a second P-type MOS transistor M2Form a current mirror to make the second P-type MOS transistor M2And a first P-type MOS transistor M1The same current flows, so that the first NPN type triode Q flows1And a second NPN type triode Q2The same current flows. By arranging a first NPN type triode Q1And a second NPN type triode Q2Different area ratios n can ensure that the first NPN type triode Q1And a second NPN type triode Q2There are different base emitter voltage difference Vbe due to the first NPN type triode Q1And a second NPN type IIIPolar tube Q2Have the same base potential, so that the first NPN type triode Q1And a second NPN type triode Q2Having different emitter potentials, a first NPN transistor Q1And a second NPN type triode Q2Has a potential difference avbe which is exactly equal to the voltage drop over the first resistor. Δ Vbe is a voltage positively correlated to temperature, divided by the first resistance R1The resistance of the (positive temperature coefficient resistor) results in a current which is positively correlated with the temperature. Fifth P type MOS tube M5And a first P-type MOS transistor M1Constituting a current mirror, a fifth P-type MOS transistor M5The current of the first P-type MOS tube M1M times, the resulting PTAT output current expression is thus as shown in equation (1).
Figure BDA0002992017070000041
As shown in FIG. 2, the feedback loop includes a fourth N-type MOS transistor M4And a second NPN type triode Q2Fourth N-type MOS transistor M4The grid of the transistor is connected with a second NPN type triode Q2Collector of (1), fourth N-type MOS transistor M4The source of the transistor is connected with a second NPN type triode Q2The base of (1). When the second NPN type triode Q2When the collector potential of (2) is increased, it is used as the fourth N-type MOS transistor M4The fourth N-type MOS transistor M4Also increases the source output potential as a second NPN type transistor Q2A second NPN type triode Q2The collector potential of the transistor is lowered to form negative feedback. At the same time, the negative feedback loop also forms a current mirror circuit of the transistor, as shown in fig. 3. Second NPN type triode Q2The collector passes through a fourth N-type MOS tube M4Is connected to a second NPN type triode Q2To the first NPN type triode Q1And a second NPN type triode Q2And a third NPN type triode Q3The base potential is provided. Therefore, the base of the other NPN type triode is connected with the second NPN type triode Q2The base of the second NPN type triode Q can be copied2Acts as a current mirror.
As shown in FIG. 4, the CTAT current generating circuit includes a second resistor R2Fourth N-type MOS transistor M4Third P type MOS transistor M3A second NPN diode Q2Sixth P-type MOS transistor M6. One end of the second resistor is connected with the second NPN type triode Q2And the other end of the base is grounded. Third P type MOS tube M3The drain electrode of the transistor is connected with a fourth N-type MOS transistor M4Drain electrode of (3), third P-type MOS transistor M3The source of the transistor is connected with a power supply voltage; third P type MOS tube M3Grid and third P-type MOS tube M3The drain electrodes of the first and second transistors are connected together; sixth P type MOS tube M6The grid of the first P-type MOS transistor is connected with the grid of the third P-type MOS transistor, and the sixth P-type MOS transistor M6The sixth P-type MOS transistor M6Is connected with a third resistor R3. A second resistor R2One end of the second NPN type triode Q is connected with2Another end of the base is connected with a second NPN type triode Q2So that the voltage drop across the second resistor is equal to the second NPN transistor Q2Is a voltage which is negatively temperature-dependent, divided by the second resistor R2The resistance of the (positive temperature coefficient resistor) results in a current that is inversely related to temperature. Sixth P type MOS tube M6And a third P-type MOS transistor M3Constituting a current mirror, a sixth P-type MOS transistor M6The current of the third P-type MOS tube M3K times of. Therefore, the CTAT current expression obtained is shown in formula (2).
Figure BDA0002992017070000051
As shown in FIG. 5, the circuit for generating multiple temperature coefficient current and voltage comprises a third resistor R3Fifth P type MOS transistor M5Sixth P-type MOS transistor M6The first P-type MOS transistor M1Third P type MOS transistor M3. Fifth P type MOS tube M5Drain electrode of and sixth P-type MOS transistor M6The drains of the first and second P-type MOS transistors M are connected together5The grid of the first P-type MOS tube is connected with the grid of the first P-type MOS tube, and the sixth P-type MOS tubeM6The grid of the first P-type MOS transistor is connected with the grid M of the third P-type MOS transistor3. Fifth P type MOS tube M5Source electrode of and sixth P-type MOS transistor M6Is connected to the supply voltage. Third resistor R3One end of the first P-type MOS tube M is connected with the fifth P-type MOS tube M5And a sixth P-type MOS transistor M6And the other end of the same is grounded. Fifth P type MOS tube M5And a first P-type MOS transistor M1Form a current mirror structure and reasonably arrange a fifth P-type MOS tube M5And a first P-type MOS transistor M1The area ratio of (1) can be determined to flow through the fifth P-type MOS transistor M5Is a positive temperature coefficient of current. Likewise, a sixth P-type MOS transistor M6And a third P-type MOS transistor M3Form a current mirror structure and reasonably arrange a sixth P-type MOS tube M6And a third P-type MOS transistor M3The area ratio of the sixth P-type MOS transistor M can be determined6Is a negative temperature coefficient current. Fifth P type MOS tube M5PTAT current and sixth P type MOS tube M6The CTAT current is linearly superposed, the expression is shown as formula (3), and the current with various temperature coefficients can be obtained by setting different proportionality coefficients m and k for the parameters of the MOS tube of the circuit.
Figure BDA0002992017070000052
For example, if a zero temperature coefficient current is to be obtained,
Figure BDA0002992017070000053
because at room temperature,
Figure BDA0002992017070000054
however, it is not limited to
Figure BDA0002992017070000055
So as to arrange
Figure BDA0002992017070000056
A reference current with zero temperature coefficient can be obtained.
If the current with zero temperature coefficient flows through the third resistor R3Generating a voltage drop Vref on the third resistor to obtain a zero temperature coefficient voltage value only from the third resistor R3The resistance value of (c) is determined. Therefore, the expression of the obtained temperature-independent voltage reference is shown in formula (4).
Figure BDA0002992017070000057
Figure BDA0002992017070000061
As long as make
Figure BDA0002992017070000062
A reference voltage with zero temperature coefficient can be obtained.
In conclusion, the invention adopts the current superposition type reference source design, and the reference currents with various temperature coefficients can be obtained only by adjusting the proportional coefficient of the PTAT current and the CTAT current. The invention directly uses the negative feedback loop of the PTAT current generating circuit as the current mirror structure of the triode, saves the number of the tubes and is suitable for low power supply voltage power supply. The invention directly uses the negative feedback loop of the PTAT current generating circuit on the CTAT current generating circuit, compared with the traditional structure, the PTAT current generating circuit and the CTAT current generating circuit are completely independent, thereby saving current branch circuits, saving area and reducing power consumption.
Low advertisement low power consumption.

Claims (6)

1. A current reference circuit outputting various temperature coefficients is characterized by comprising a positive temperature coefficient (PATA) current generating circuit, a negative feedback loop, a negative temperature Coefficient (CTAT) current generating circuit, various temperature coefficient current generating circuits and a starting circuit;
the PTAT current generating circuit is used for providing a current with a positive temperature coefficient for the output resistor;
the negative feedback loop is used for providing stability requirements for the PTAT current generating circuit;
the CTAT current generating circuit is used for providing a current with a negative temperature coefficient for the output resistor;
the multiple temperature coefficient current generation circuit is formed by linearly superposing a PTAT current and a CTAT current and is used for generating reference currents with multiple temperature coefficients by adjusting a proportionality coefficient;
and the starting circuit is used for starting the reference circuit by the starting circuit when the band gap reference circuit is in a degenerate working state.
2. The current reference circuit according to claim 1, wherein the PTAT current generating circuit comprises a first NPN transistor, a second NPN transistor, a first resistor, a first P-type MOS transistor, and a second P-type MOS transistor;
the base electrode of the first NPN type triode is connected with the base electrode of the second NPN type triode, the emitting electrode of the first NPN type triode is connected with one end of the first resistor, and the emitting electrode of the second NPN type triode is grounded; the other end of the first resistor is grounded;
the grid electrode of the first P-type MOS tube is connected with the grid electrode of the second P-type MOS tube, the drain electrode of the first P-type MOS tube is connected with the collector electrode of the first NPN-type triode, the drain electrode of the second P-type MOS tube is connected with the collector electrode of the second NPN-type triode, and the source electrodes of the first P-type MOS tube and the second P-type MOS tube are connected with power supply voltage; the grid electrode of the first P-type MOS tube is connected with the drain electrode of the first P-type MOS tube.
3. The current reference circuit according to claim 1 or 2, wherein the negative feedback loop comprises a fourth N-type MOS transistor and a second NPN-type transistor;
the grid electrode of the fourth N-type MOS tube is connected with the collector electrode of the second NPN-type triode, and the source electrode of the fourth N-type MOS tube is connected with the base electrode of the second NPN-type triode.
4. The current reference circuit according to claim 3, wherein the CTAT current generating circuit comprises a second resistor, a third P-type MOS transistor, a fourth N-type MOS transistor, and a second NPN-type transistor;
one end of the second resistor is connected with the base electrode of the second NPN type triode, and the other end of the second resistor is grounded; the drain electrode of the third P-type MOS tube is connected with the drain electrode of the fourth N-type MOS tube, and the source electrode of the third P-type MOS tube is connected with power supply voltage; the grid electrode of the third P-type MOS tube is connected with the drain electrode of the third P-type MOS tube.
5. The current reference circuit according to claim 4, wherein the multiple temperature coefficient current generating circuit comprises a fifth P-type MOS transistor, a sixth P-type MOS transistor, and a third resistor;
the drain electrode of the fifth P-type MOS tube is connected with the drain electrode of the sixth P-type MMOS tube, the grid electrode of the fifth P-type MOS tube is connected with the grid electrode of the first P-type MOS tube, the grid electrode of the sixth P-type MOS tube is connected with the grid electrode of the third P-type MOS tube, and the source electrode of the fifth P-type MOS tube and the source electrode of the sixth P-type MOS tube are connected with power supply voltage; one end of the third resistor is connected with the drain electrodes of the fifth P-type MOS tube and the sixth P-type MOS tube, and the other end of the third resistor is grounded.
6. The current reference circuit according to claim 5, wherein the start-up circuit comprises a third NPN transistor, a fourth resistor, and a seventh N MOS transistor;
the base electrode of the third NPN type triode is connected with the base electrode of the second NPN type triode, the emitting electrode of the third NPN type triode is grounded, the collecting electrode of the third NPN type triode is connected with one end of a fourth resistor, and the other end of the fourth resistor is connected with power voltage; the grid electrode and the drain electrode of the seventh N-type MOS tube are connected together and connected with the collector electrode of the third NPN-type triode and the seventh N-type MOS tube M7The source of the second NPN type triode is connected with the collector of the second NPN type triode.
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CN114546019A (en) * 2021-08-24 2022-05-27 南京航空航天大学 Temperature coefficient adjustable reference voltage source

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CN109828630A (en) * 2019-01-24 2019-05-31 桂林电子科技大学 A kind of temperature independent low-power consumption reference current source
CN109976425A (en) * 2019-04-25 2019-07-05 湖南品腾电子科技有限公司 A kind of low-temperature coefficient reference source circuit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113467567A (en) * 2021-07-28 2021-10-01 深圳市中科蓝讯科技股份有限公司 Reference source circuit and chip
CN114546019A (en) * 2021-08-24 2022-05-27 南京航空航天大学 Temperature coefficient adjustable reference voltage source
CN114546019B (en) * 2021-08-24 2022-12-23 南京航空航天大学 Temperature coefficient adjustable reference voltage source
CN114062765A (en) * 2021-11-18 2022-02-18 上海南芯半导体科技股份有限公司 Low-power consumption high accuracy voltage detection circuit
CN114062765B (en) * 2021-11-18 2023-07-28 上海南芯半导体科技股份有限公司 Low-power-consumption high-precision voltage detection circuit

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