CN114062765A - Low-power consumption high accuracy voltage detection circuit - Google Patents
Low-power consumption high accuracy voltage detection circuit Download PDFInfo
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- CN114062765A CN114062765A CN202111370936.XA CN202111370936A CN114062765A CN 114062765 A CN114062765 A CN 114062765A CN 202111370936 A CN202111370936 A CN 202111370936A CN 114062765 A CN114062765 A CN 114062765A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
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- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract
The invention belongs to the technical field of voltage detection, and particularly relates to a low-power-consumption high-precision voltage detection circuit. The voltage detection circuit in the prior art needs a reference circuit, a sampling circuit and a comparison circuit to realize high precision, so that the design load degree of the circuit is increased, the area is increased, and meanwhile, the power consumption is increased, and the voltage detection circuit is not suitable for low-cost and low-power consumption application. The invention adopts the voltage judgment circuit irrelevant to the voltage, the process and the temperature, and combines the sampling circuit to directly realize the detection of the voltage and simultaneously save the power consumption.
Description
Technical Field
The invention belongs to the technical field of voltage detection, and particularly relates to a low-power-consumption high-precision voltage detection circuit.
Background
In order to realize a high-precision voltage detection circuit, the influence of process and temperature related factors needs to be overcome, a high-precision voltage judgment circuit in the existing CMOS process is shown in figure 1, a reference circuit which is irrelevant to the process, the voltage and the temperature needs to be generated firstly, and then a reference and voltage sampling circuit is used as the input of a comparator to judge the voltage.
Disclosure of Invention
The invention provides a low-power-consumption high-precision voltage detection circuit aiming at the problems.
The technical scheme of the invention is as follows:
a low-power-consumption high-precision voltage detection circuit comprises a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a second triode, a first MOS (metal oxide semiconductor) transistor, a second MOS transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, an eighth MOS transistor and a transimpedance amplifier; the input voltage is grounded after passing through the first resistor and the second resistor in sequence; the base electrodes of the first triode and the second triode are connected with the connection point of the first resistor and the second resistor, the collector electrode of the first triode is connected with the drain electrode of the seventh MOS tube, the emitter electrode of the first triode is grounded after passing through the fourth resistor, the collector electrode of the second triode is connected with the drain electrode of the sixth MOS tube, and the emitter electrode of the second triode is grounded after passing through the third resistor and the fourth resistor in sequence; the source electrode of the seventh MOS tube is connected with a power supply, the grid electrode of the seventh MOS tube is interconnected with the drain electrode of the seventh MOS tube, the source electrode of the eighth MOS tube is connected with the power supply, the grid electrode of the eighth MOS tube is connected with the drain electrode of the seventh MOS tube, the drain electrode of the eighth MOS tube is connected with the drain electrode of the first MOS tube, the grid electrode of the first MOS tube is interconnected with the drain electrode of the first MOS tube, and the source electrode of the first MOS tube is grounded; the source electrode of the sixth MOS tube is connected with a power supply, the grid electrode of the sixth MOS tube is interconnected with the drain electrode of the fifth MOS tube, the grid electrode of the fifth MOS tube is connected with the drain electrode of the sixth MOS tube, and the drain electrode of the fifth MOS tube is connected with the drain electrode of the second MOS tube and the grid electrode of the third MOS tube; the grid electrode of the second MOS tube is connected with the drain electrode of the eighth MOS tube, the source electrode of the second MOS tube is grounded, the drain electrode of the third MOS tube is connected with the drain electrode of the fourth MOS tube, and the source electrode of the third MOS tube is grounded; the source electrode of the fourth MOS tube is connected with the power supply, and the grid electrode of the fourth MOS tube is connected with the drain electrode of the sixth MOS tube; the junction of the third MOS tube and the fourth MOS tube is connected with the input end of the transimpedance amplifier, and the output end of the transimpedance amplifier is the output end of the detection circuit and outputs detection voltage.
Furthermore, the power supply also comprises a ninth MOS tube, a tenth MOS tube, an eleventh MOS tube, a twelfth MOS tube, a thirteenth MOS tube and a third triode; the source electrode of the ninth MOS tube is connected with the power supply, the grid electrode of the ninth MOS tube is connected with the drain electrode of the sixth MOS tube, and the drain electrode of the ninth MOS tube is connected with the collector electrode of the third triode; the collector of the third triode is also connected with the drain of the tenth MOS tube and the grid of the eleventh MOS tube, the base of the third triode is connected with the source of the eleventh MOS tube, and the emitter of the third triode is grounded; the source electrode of the tenth MOS tube is connected with a power supply, the grid electrode of the tenth MOS tube is connected with the drain electrode of the seventh MOS tube, and the drain electrode of the eleventh MOS tube is connected with the drain electrode of the twelfth MOS tube; the source electrode of the twelfth MOS tube is connected with the power supply, and the grid electrode and the drain electrode of the twelfth MOS tube are interconnected; the source electrode of the thirteenth MOS tube is connected with the power supply, the grid electrode of the thirteenth MOS tube is connected with the drain electrode of the twelfth MOS tube, and the drain electrode of the thirteenth MOS tube is connected with the connection point of the first resistor and the second resistor.
The invention has the beneficial effects that: the invention adopts the voltage judgment circuit irrelevant to the voltage, the process and the temperature, and combines the sampling circuit to directly realize the detection of the voltage and simultaneously save the power consumption.
Drawings
Fig. 1 is a conventional voltage determination circuit.
FIG. 2 is a schematic diagram of a voltage detection circuit according to the present invention.
Fig. 3 is a schematic diagram of a voltage detection circuit with base current compensation added on the basis of fig. 2.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
Since the devices used in the circuit diagrams of the present invention are well known in the art, the following description will make the explanation of the mechanisms of these conventional devices and some common general circuit principles more prominent.
As shown in fig. 2, the circuit of the present invention is composed of two parts, a sampling part and a judging part, and the circuit to be detected is sampled by R1 and R2 to obtain:
judging the specific principle of the part: when I1 is equal to I2, the comparator is turned over, in the figure, Q1 and Q0 adopt different sizes, and the ratio is 1: NPN with N (most commonly 1: 8) is derived from BJT characteristics: when I1 is equal to I2
Wherein Δ VBE＝VBE1-VBE2Due to VBEExhibits a negative temperature characteristic, VBE1-VBE2The judgment point of the 0 temperature coefficient VSNS is obtained by setting the proportion of R3 and R4, thereby realizing the judgment point which is independent of temperature, process and voltage.
However, in CMOS process, the amplification factor beta of BJT is small, so that there is base current
IB is positive temperature coefficient, IB flows through the resistor R1, and IB is formed on the resistor R1
The detected voltage has an error of Δ V and shows a positive temperature coefficient, thereby affecting the accuracy of the detected voltage. So that compensation of this current is required.
As shown in fig. 3, for the voltage detection circuit with base current compensation, M4 and M6 form a current mirror to sample I2, M7 and M9 form a current mirror to sample I1, the current flowing through Q2 is equal to the sum of I2 and I1, M11 current is equal to (I1+ I2)/β, M11 and M12 form a current mirror, and M12 current is equal to (I1+ I2)/β, and the current is equal to the base currents Q0 and Q1, so as to eliminate the error caused by the base currents Q0 and Q1.
Claims (2)
1. A low-power-consumption high-precision voltage detection circuit is characterized by comprising a first resistor, a second resistor, a third resistor, a fourth resistor, a first triode, a second triode, a first MOS (metal oxide semiconductor) transistor, a second MOS (metal oxide semiconductor) transistor, a third MOS transistor, a fourth MOS transistor, a fifth MOS transistor, a sixth MOS transistor, a seventh MOS transistor, an eighth MOS transistor and a transimpedance amplifier; the input voltage is grounded after passing through the first resistor and the second resistor in sequence; the base electrodes of the first triode and the second triode are connected with the connection point of the first resistor and the second resistor, the collector electrode of the first triode is connected with the drain electrode of the seventh MOS tube, the emitter electrode of the first triode is grounded after passing through the fourth resistor, the collector electrode of the second triode is connected with the drain electrode of the sixth MOS tube, and the emitter electrode of the second triode is grounded after passing through the third resistor and the fourth resistor in sequence; the source electrode of the seventh MOS tube is connected with a power supply, the grid electrode of the seventh MOS tube is interconnected with the drain electrode of the seventh MOS tube, the source electrode of the eighth MOS tube is connected with the power supply, the grid electrode of the eighth MOS tube is connected with the drain electrode of the seventh MOS tube, the drain electrode of the eighth MOS tube is connected with the drain electrode of the first MOS tube, the grid electrode of the first MOS tube is interconnected with the drain electrode of the first MOS tube, and the source electrode of the first MOS tube is grounded; the source electrode of the sixth MOS tube is connected with a power supply, the grid electrode of the sixth MOS tube is interconnected with the drain electrode of the fifth MOS tube, the grid electrode of the fifth MOS tube is connected with the drain electrode of the sixth MOS tube, and the drain electrode of the fifth MOS tube is connected with the drain electrode of the second MOS tube and the grid electrode of the third MOS tube; the grid electrode of the second MOS tube is connected with the drain electrode of the eighth MOS tube, the source electrode of the second MOS tube is grounded, the drain electrode of the third MOS tube is connected with the drain electrode of the fourth MOS tube, and the source electrode of the third MOS tube is grounded; the source electrode of the fourth MOS tube is connected with the power supply, and the grid electrode of the fourth MOS tube is connected with the drain electrode of the sixth MOS tube; the junction of the third MOS tube and the fourth MOS tube is connected with the input end of the transimpedance amplifier, and the output end of the transimpedance amplifier is the output end of the detection circuit and outputs detection voltage.
2. The voltage detection circuit with low power consumption and high precision of claim 1, further comprising a ninth MOS transistor, a tenth MOS transistor, an eleventh MOS transistor, a twelfth MOS transistor, a thirteenth MOS transistor and a third transistor; the source electrode of the ninth MOS tube is connected with the power supply, the grid electrode of the ninth MOS tube is connected with the drain electrode of the sixth MOS tube, and the drain electrode of the ninth MOS tube is connected with the collector electrode of the third triode; the collector of the third triode is also connected with the drain of the tenth MOS tube and the grid of the eleventh MOS tube, the base of the third triode is connected with the source of the eleventh MOS tube, and the emitter of the third triode is grounded; the source electrode of the tenth MOS tube is connected with a power supply, the grid electrode of the tenth MOS tube is connected with the drain electrode of the seventh MOS tube, and the drain electrode of the eleventh MOS tube is connected with the drain electrode of the twelfth MOS tube; the source electrode of the twelfth MOS tube is connected with the power supply, and the grid electrode and the drain electrode of the twelfth MOS tube are interconnected; the source electrode of the thirteenth MOS tube is connected with the power supply, the grid electrode of the thirteenth MOS tube is connected with the drain electrode of the twelfth MOS tube, and the drain electrode of the thirteenth MOS tube is connected with the connection point of the first resistor and the second resistor.
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| CN202111370936.XA CN114062765B (en) | 2021-11-18 | 2021-11-18 | Low-power-consumption high-precision voltage detection circuit |
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| CN202111370936.XA CN114062765B (en) | 2021-11-18 | 2021-11-18 | Low-power-consumption high-precision voltage detection circuit |
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| CN114062765B CN114062765B (en) | 2023-07-28 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114689934A (en) * | 2022-06-01 | 2022-07-01 | 苏州贝克微电子股份有限公司 | Modular voltage detection circuit |
| CN117471152A (en) * | 2023-12-27 | 2024-01-30 | 苏州贝克微电子股份有限公司 | Low-power-consumption voltage detection circuit |
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2021
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| CN201159746Y (en) * | 2008-02-03 | 2008-12-03 | 深圳艾科创新微电子有限公司 | Current detection circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114689934A (en) * | 2022-06-01 | 2022-07-01 | 苏州贝克微电子股份有限公司 | Modular voltage detection circuit |
| CN117471152A (en) * | 2023-12-27 | 2024-01-30 | 苏州贝克微电子股份有限公司 | Low-power-consumption voltage detection circuit |
| CN117471152B (en) * | 2023-12-27 | 2024-03-08 | 苏州贝克微电子股份有限公司 | Low-power-consumption voltage detection circuit |
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