CN110007127A - A kind of voltage detecting circuit - Google Patents
A kind of voltage detecting circuit Download PDFInfo
- Publication number
- CN110007127A CN110007127A CN201910351678.7A CN201910351678A CN110007127A CN 110007127 A CN110007127 A CN 110007127A CN 201910351678 A CN201910351678 A CN 201910351678A CN 110007127 A CN110007127 A CN 110007127A
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- nmos transistor
- voltage
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- 230000005611 electricity Effects 0.000 claims description 5
- 238000005265 energy consumption Methods 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
Abstract
The invention discloses a kind of voltage detecting circuits, resistance R206 in the circuit, resistance R207, NMOS transistor MN201, NMOS transistor MN202, the circuit of NMOS transistor MN203 composition generates bias current related with input voltage VIN, PMOS transistor MP201, PMOS transistor MP202 and PMOS transistor MP203 forms current mirror, the electric current of PMOS transistor MP202 flows into first node, the electric current of PMOS transistor MP203 flows into second node, first node voltage divides to obtain third node voltage by resistance R201 and resistance R204, second node voltage divides to obtain fourth node voltage by resistance R203 and resistance R205, the positive input of comparator Fourth node is terminated, the negative input of comparator connects third node.The circuit has structure simple, and operating voltage is low, low in energy consumption, the small feature of chip occupying area.
Description
Technical field
The invention belongs to CMOS technology integrated circuit fields, in particular to a kind of voltage detecting circuit.
Background technique
Voltage detecting circuit exists in many electric power management circuit systems, such as DC-DC, Charge pump and lithium
Battery protection chip etc..Whether it is more than to work normally electricity that the basic function of voltage detecting circuit is by the voltage in detection circuit
Pressure, to change the working condition of some circuit modules in circuit system.
Be illustrated in figure 2 common voltage detecting circuit, including PMOS transistor MP101, PMOS transistor MP102,
PMOS transistor MP103, resistance R101, resistance R102, resistance R103, resistance R104, PNP triode Q11 and Q12, Yi Jiyun
The reference circuit of amplifier OP composition is calculated, generating, there is the reference voltage VREF, voltage VIN to be detected of zero-temperature coefficient to pass through electricity
It hinders R105 and R106 partial pressure and generates voltage VPI, comparator CMP judges the height of voltage VREF and voltage VPI, when VREF is greater than
When VPI, the output of comparator CMP is low level；When VREF is less than VPI, comparator output is high level.Due to band-gap reference
It is middle to there is the closed-loop system being made of operational amplifier, it needs biggish compensating electric capacity to guarantee circuit stability, leads to the electricity
The disadvantage that line structure is complex, operating voltage is higher and power consumption is larger.
Summary of the invention
The purpose of the present invention is to provide a kind of voltage detecting circuits, to solve the above problems.
To achieve the above object, the invention adopts the following technical scheme:
A kind of voltage detecting circuit, including resistance R201, resistance R202, resistance R203, resistance R204, resistance R205,
PMOS transistor MP201, PMOS transistor MP202, PMOS transistor MP203, PNP triode Q21 and PNP triode Q22；
The drain electrode of emitter, PMOS transistor MP202 of PNP triode Q21 and one end of resistance R201 are connected to first
Node；
The emitter of PNP triode Q22 is connected with the one end resistance R202, the other end of resistance R202, resistance R203
The drain electrode of one end and PMOS transistor MP203 are connected to second node；
The other end and resistance R204 of resistance R201 is connected to third node；
The other end of resistance R203 and one end of resistance R205 are connected to fourth node；
PMOS transistor MP201, PMOS transistor MP202, PMOS transistor MP203 form current mirror
Further, further include resistance R206, resistance R207, NMOS transistor MN201, NMOS transistor MN202 and
NMOS transistor MN203；
The one end resistance R206 connects input voltage VIN, and one end connects the grid and NMOS transistor of NMOS transistor MN201
The drain electrode of MN202, the grid of NMOS transistor MN202, the source electrode of NMOS transistor MN201, NMOS transistor MN203 grid
And one end of resistance R207 is connected to a bit；
The source electrode of PMOS transistor MP201, the source electrode of PMOS transistor MP202, PMOS transistor MP203 source electrode are connected to
Input voltage VIN, the grid and drain electrode, the grid of PMOS transistor MP202, PMOS transistor MP203 of PMOS transistor MP201
The drain electrode of grid and NMOS transistor MN201 and the drain electrode of NMOS transistor MN203 are connected to a bit.
Further, the source electrode of NMOS transistor MN202, the source electrode of NMOS transistor MN203 and resistance R207's is another
One end is connected to ground.
Further, the base stage of the base stage of PNP triode Q21 and collector, PNP triode Q22 connect with collector with
Ground.
Further, the other end ground connection of resistance R204, the other end of resistance R205 are connected to ground.
It further, further include comparator CMP, the positive input of comparator CMP is connected with fourth node, comparator
The negative input of CMP is connected with third node.
Compared with prior art, the present invention has following technical effect:
The band-gap reference circuit of operational amplifier composition closed-loop system is not used in the present invention, without the concern for closed-loop system institute
Bring stability problem reduces design complexities.
Circuit structure of the present invention is simple, has the characteristics that work under low-voltage, low-power consumption and to account for chip area small.
Detailed description of the invention
Fig. 1 is voltage detecting circuit schematic diagram of the invention.
Fig. 2 is a kind of existing common voltage detection principle diagram.
Specific embodiment
Below in conjunction with drawings and examples, the present invention will be further described:
Referring to Fig. 1, a kind of voltage detecting circuit of low-voltage and low-power dissipation, including resistance R201, resistance R202, resistance R203,
Resistance R204, resistance R205, resistance R206, resistance R207, PMOS transistor MP201, PMOS transistor MP202, PMOS crystal
Pipe MP203, NMOS transistor MN201, NMOS transistor MN202, NMOS transistor MN203, tri- pole of PNP triode Q21, PNP
Pipe Q22, comparator CMP.
Resistance R206, resistance R207, NMOS transistor MN201, NMOS transistor MN202, NMOS in the circuit is brilliant
The circuit of body pipe MN203 composition generates bias current Ib.Wherein the one end resistance R206 connection input detection voltage VIN, one end connect
Connect the drain electrode of the grid and NMOS transistor MN202 of NMOS transistor MN201, grid, the NMOS crystal of NMOS transistor MN202
One end of the source electrode of pipe MN201, the grid of NMOS transistor MN203 and resistance R207 is connected to a bit, NMOS transistor
The other end of the source electrode of MN202, the source electrode of NMOS transistor MN203 and resistance R207 is connected to ground.PMOS transistor
MP201, PMOS transistor MP202, PMOS transistor MP203 form current mirror, and source electrode, the PMOS of PMOS transistor MP201 is brilliant
Source electrode, the PMOS transistor MP203 source electrode of body pipe MP202 is connected to input detection voltage VIN, the grid of PMOS transistor MP201
Pole and drain electrode, the grid of PMOS transistor MP202, PMOS transistor MP203 grid and NMOS transistor MN201 drain electrode and
The drain electrode of NMOS transistor MN203 is connected to a bit.Base stage and collector, the base stage of PNP triode Q22 of PNP triode Q21
It connect with collector and connects with ground, the drain electrode of the emitter, PMOS transistor MP202 of PNP triode Q21 and one end of resistance R201
It is connected to first node, the emitter of PNP triode Q22 is connected with the one end resistance R202, the other end of resistance R202, resistance
One end of R203 and the drain electrode of PMOS transistor MP203 are connected to second node, the other end and resistance R204 of resistance R201
It is connected to third node, the other end ground connection of resistance R204, the other end of resistance R203 and one end of resistance R205 are connected to
Fourth node, the other end of resistance R205 are connected to ground, and the positive input of comparator CMP is connected with fourth node, comparator
The negative input of CMP is connected with third node.
The resistance value of resistance R206 is twice of resistance R207, NMOS transistor MN201, NMOS transistor in the circuit
MN202 is identical with the size of NMOS transistor MN203, then generates Self-bias Current IbAre as follows:
PMOS transistor MP201, PMOS transistor MP202, the size of PMOS transistor MP203 are identical in the circuit,
PMOS transistor MP202 by with PMOS transistor MP201 mirror image generate and IbEqual current value is supplied to first node,
PMOS transistor MP203 by with PMOS transistor mirror image generate and IbEqual current value is supplied to second node.
The resistance value of resistance R201 is equal with the resistance value of resistance R203 in the circuit, the resistance value and resistance R205 of resistance R204
Resistance value it is equal.Third node voltage value V3 is the partial pressure value that first node voltage value V1 passes through resistance R201 and resistance R204,
Fourth node voltage value V4 is the partial pressure value that second node voltage value V2 passes through resistance R203 and resistance R205.PNP triode Q22
Area be n times of PNP triode Q21 area, generally take n=8.
The then voltage of first node are as follows:
Wherein IR201For the current value for flowing through resistance R201, VTFor thermoelectrical potential, ISFor the saturation current of PNP triode, IQ21
For the emitter current of PNP triode Q21.
The voltage of second node are as follows:
Wherein IR203For the current value for flowing through resistance R203, VTFor thermoelectrical potential, ISFor the saturation current of PNP triode, IQ22
For the emitter current of PNP triode Q22.
Third node voltage are as follows:
Fourth node voltage are as follows:
As V1=V2, the electric current of PMOS transistor MP202 at this time and the electric current I of PMOS transistor MP203 are obtainedeqAre as follows:
Wherein VTFor thermoelectrical potential, n is the area ratio of PNP triode Q21 and PNP triode Q22.
As bias current IbLess than electric current IeqWhen, the voltage value of first node is greater than the voltage value of second node, i.e. third
The voltage value of node is greater than the voltage value of fourth node, then the negative input of comparator CMP is greater than positive input, comparator
The output OUT of CMP is low level；
As bias current IbGreater than electric current IeqWhen, the voltage value of first node is less than the voltage value of second node, i.e. third
The voltage value of node is less than the voltage value of fourth node, then the negative input of comparator CMP is less than positive input, comparator
The output OUT of CMP is high level.
In conclusion electrical voltage point Vc is detected required for adjusting out by the resistance value of setting resistance R206 and resistance R207,
The value of resistance R206 and resistance R207 are as follows:
Then when input voltage VIN is less than Vc, bias current IbLess than electric current Ieq, the voltage value of first node is greater than second
The voltage value of node, the i.e. voltage value of third node are greater than the voltage value of fourth node, then the negative input of comparator CMP is big
In positive input, the output OUT of comparator CMP is low level；
When input voltage VIN is greater than Vc, bias current IbGreater than electric current Ieq, the voltage value of first node is less than the second section
The voltage value of point, the i.e. voltage value of third node are less than the voltage value of fourth node, then the negative input of comparator CMP is less than
Positive input, the output OUT of comparator CMP are high level.
Above example and diagram and non-limiting product form and style of the invention, are not constituted to any limit of the invention
System, it is clear that different change and improvement can be carried out to its circuit under design of the invention, but these are in guarantor of the invention
The column of shield.
Claims (6)
1. a kind of voltage detecting circuit, which is characterized in that including resistance R201, resistance R202, resistance R203, resistance R204, electricity
Hinder R205, PMOS transistor MP201, PMOS transistor MP202, PMOS transistor MP203, tri- pole PNP triode Q21 and PNP
Pipe Q22；
The drain electrode of emitter, PMOS transistor MP202 of PNP triode Q21 and one end of resistance R201 are connected to first node；
The emitter of PNP triode Q22 is connected with the one end resistance R202, one end of the other end of resistance R202, resistance R203
Drain electrode with PMOS transistor MP203 is connected to second node；
The other end and resistance R204 of resistance R201 is connected to third node；
The other end of resistance R203 and one end of resistance R205 are connected to fourth node；
PMOS transistor MP201, PMOS transistor MP202, PMOS transistor MP203 form current mirror.
2. a kind of voltage detecting circuit according to claim 1, which is characterized in that further include resistance R206, resistance R207,
NMOS transistor MN201, NMOS transistor MN202 and NMOS transistor MN203；
The one end resistance R206 connects input voltage VIN, and one end connects the grid and NMOS transistor of NMOS transistor MN201
The drain electrode of MN202, the grid of NMOS transistor MN202, the source electrode of NMOS transistor MN201, NMOS transistor MN203 grid
And one end of resistance R207 is connected to a bit；
The source electrode of PMOS transistor MP201, the source electrode of PMOS transistor MP202, PMOS transistor MP203 source electrode are connected to input
The grid and drain electrode, the grid of PMOS transistor MP202, PMOS transistor MP203 grid of voltage VIN, PMOS transistor MP201
The drain electrode of drain electrode and NMOS transistor MN203 with NMOS transistor MN201 is connected to a bit.
3. a kind of voltage detecting circuit according to claim 2, which is characterized in that the source electrode of NMOS transistor MN202,
The source electrode of NMOS transistor MN203 and the other end of resistance R207 are connected to ground.
4. a kind of voltage detecting circuit according to claim 1, which is characterized in that the base stage and current collection of PNP triode Q21
Pole, PNP triode Q22 base stage connect with collector with ground.
5. a kind of voltage detecting circuit according to claim 1, which is characterized in that the other end of resistance R204 is grounded, electricity
The other end of resistance R205 is connected to ground.
6. a kind of voltage detecting circuit according to claim 1, which is characterized in that further include comparator CMP, comparator
The positive input of CMP is connected with fourth node, and the negative input of comparator CMP is connected with third node.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910351678.7A CN110007127B (en) | 2019-04-28 | 2019-04-28 | Voltage detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910351678.7A CN110007127B (en) | 2019-04-28 | 2019-04-28 | Voltage detection circuit |
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| CN110007127A true CN110007127A (en) | 2019-07-12 |
| CN110007127B CN110007127B (en) | 2021-01-15 |
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|---|---|---|---|
| CN201910351678.7A Active CN110007127B (en) | 2019-04-28 | 2019-04-28 | Voltage detection circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114062765A (en) * | 2021-11-18 | 2022-02-18 | 上海南芯半导体科技股份有限公司 | Low-power consumption high accuracy voltage detection circuit |
| CN114689934A (en) * | 2022-06-01 | 2022-07-01 | 苏州贝克微电子股份有限公司 | Modular voltage detection circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114062765A (en) * | 2021-11-18 | 2022-02-18 | 上海南芯半导体科技股份有限公司 | Low-power consumption high accuracy voltage detection circuit |
| CN114062765B (en) * | 2021-11-18 | 2023-07-28 | 上海南芯半导体科技股份有限公司 | Low-power-consumption high-precision voltage detection circuit |
| CN114689934A (en) * | 2022-06-01 | 2022-07-01 | 苏州贝克微电子股份有限公司 | Modular voltage detection circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110007127B (en) | 2021-01-15 |
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Denomination of invention: A voltage detection circuit Effective date of registration: 20231222 Granted publication date: 20210115 Pledgee: Xi'an innovation financing Company limited by guarantee Pledgor: HUATECH SEMICONDUCTOR, Inc. Registration number: Y2023980073740 |
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