CN109828630A - A kind of temperature independent low-power consumption reference current source - Google Patents
A kind of temperature independent low-power consumption reference current source Download PDFInfo
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- CN109828630A CN109828630A CN201910069815.8A CN201910069815A CN109828630A CN 109828630 A CN109828630 A CN 109828630A CN 201910069815 A CN201910069815 A CN 201910069815A CN 109828630 A CN109828630 A CN 109828630A
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Abstract
The invention discloses a kind of temperature independent low-power consumption reference current sources, including negative temperature parameter current generation circuit, positive temperature coefficient current generating circuit, start-up circuit and reference current output circuit.Negative temperature parameter current generation circuit is for generating a negative temperature parameter current, and positive temperature coefficient current generating circuit is for generating a positive temperature coefficient electric current；Start-up circuit is for avoiding zero current (degeneracy) state；Positive temperature coefficient electric current is added by reference current output circuit with negative temperature parameter current generates a temperature independent reference current.The circuit has the characteristics that structure is simple, low in energy consumption, area is small, operating voltage range is wide.
Description
Technical field
The invention belongs to microelectronic circuit arts fields, and in particular to a kind of temperature independent low-power consumption reference current
Source.
Background technique
For providing a stable electric current, current value does not become reference current source with supply voltage, temperature, technique
Change, traditional temperature independent reference current source is as shown in Figure 1, its essence is to turn a temperature independent reference voltage
It is changed to temperature independent reference current, its working principle is that amplifier is connected into negative-feedback, makes amplifier in-phase end and reverse side electricity
Press equal, amplifier in-phase end meets temperature independent reference voltage VREF, then amplifier reverse side voltage is also VREF, i.e. resistance R1
The voltage at both ends is also VREF, the electric current for flowing through resistance R1 is, therefore the reference current exported, due to VREF
It is temperature independent, therefore IREFIt is also unrelated with temperature.Although the reference voltage V generated by band gap referenceREFWith good temperature
Degree characteristic makes IREFAlso there is preferable temperature characterisitic, but this structure needs complete a bandgap voltage reference, amplifier
A1, metal-oxide-semiconductor M1 and resistance R1, therefore larger power consumption can be generated and occupy larger chip area.
Summary of the invention
The present invention provides a kind of temperature independent low-power consumption reference current source, including negative temperature parameter current generates electricity
Road, positive temperature coefficient current generating circuit, start-up circuit and reference current output circuit.Bring beneficial effect of the present invention is just
It is the power consumption and chip area that the reference current of lower temperature coefficient not only may be implemented, but also greatly reduced circuit.
For the negative temperature parameter current generation circuit for generating a negative temperature parameter current, which includes NMOS tube
M1, M2 and PMOS tube M3, M4 and resistance R1；Wherein: the grid of M1 is connected to node Y；The grid of M2 is connected to nodes X；
The source electrode of M1, M2 pass through resistance R1 after being connected with each other and are grounded GND；The drain electrode of M1, M3 and the grid of M3, M4 are interconnected to constitute the
One bias voltage terminal VB1；The drain electrode of M2, M4 are interconnected to constitute the second bias voltage terminal VB2；The source electrode of M3, M4 are all connected to
Power vd D.
For the positive temperature coefficient current generating circuit for generating a positive temperature coefficient electric current, which includes PMOS tube
M5, M6 and PNP type triode Q1, Q2 and resistance R2；Wherein: the base stage of Q1, Q2 and the collector of Q1, Q2 are all grounded
GND；The drain electrode of the emitter and M5 of Q1 is all connected to nodes X, and the emitter of Q2 is connected to node Y by resistance R2；M5, M6's
Grid is all connected to the second bias voltage terminal VB2；The source electrode of M5, M6 are all connected to power vd D.
The start-up circuit realizes that powered on moment provides starting electricity for benchmark circuit for avoiding zero current (degeneracy) state
Stream makes circuit be detached from zero current condition, and after circuit works normally, start-up circuit is automatically closed.The start-up circuit includes PMOS
Pipe M7, M8, M9, M10, M11 and NMOS tube M12 and capacitor C1；Wherein: the grid of M7 is connected to the second bias voltage terminal
VB2；The source electrode of M7, M8 are all connected to power vd D；The drain electrode of M7 and the grid phase of capacitor C1 first terminal and M8, M9, M10, M11
It connects；The source electrode of capacitor C1 Second terminal and M12 are grounded GND；The grid of M12 is connected to node Y；The drain electrode of M12 is with M9's
Drain electrode, the source electrode interconnection of M10；The source electrode of the drain electrode connection M9 of M8；The source electrode of the drain electrode connection M11 of M10；The drain electrode of M11
It is connected to nodes X.
Positive temperature coefficient electric current is added by the reference current output circuit with negative temperature parameter current, generates one and temperature
Spend unrelated reference current.The circuit includes PMOS tube M13, M14；The grid of M13 is connected to the first bias voltage terminal VB1；
The grid of M14 is connected to the second bias voltage terminal VB2；The source electrode of M13, M14 are connect with power vd D；The drain electrode phase of M13, M14
It connects and constitutes reference current output end IREF。
Detailed description of the invention
Fig. 1 is traditional temperature independent reference current source circuit schematic diagram.
Fig. 2 is traditional band-gap reference source circuit schematic diagram.
Fig. 3 is circuit diagram of the invention.
Specific embodiment
Technical solution of the present invention is described in detail again with technical effect with reference to the accompanying drawing.
The present invention dexterously closes negative temperature parameter current generation circuit and amplifier on the basis of traditional bandgap a reference source
Two be one, not only realizes negative temperature parameter current, but also realizes the function of amplifier, reduces circuit power consumption.Traditional band gap base
Quasi- source main body circuit is as shown in Fig. 2, M1 is identical with M2 size, and because their gate source voltage is also identical, therefore flows through M1
It is all equal with the electric current of M2, it is set as IPTAT, since amplifier has resolution, the electric current that Q1 and M1 flows through mutually is all IPTAT, Q2,
The electric current that R1 and M2 flows through mutually is all IPTAT.There is empty short characteristic since operational amplifier A1 constitutes negative feedback structure, can make
It is equal with Y two o'clock voltage to obtain X, therefore flows through the electric current on resistance R1 ,
N times that Q2 is Q1 is set, then, therefore, due to VTFor
Positive temperature coefficient, therefore IPTATBe positive temperature coefficient current.
As shown in figure 3, being temperature independent low-power consumption reference current source provided by the invention, including negative temperature coefficient electricity
Flow generation circuit, positive temperature coefficient current generating circuit, start-up circuit, reference current output circuit.Negative temperature parameter current produces
Raw circuit is for generating a negative temperature parameter current (ICTAT), positive temperature coefficient current generating circuit is for generating a positive temperature
Spend coefficient current (IPTAT)；Start-up circuit is for avoiding zero current (degeneracy) state；Reference current output circuit is by positive temperature system
Number electric current is added for generating a temperature independent reference current (I with negative temperature parameter currentREF).Wherein, positive temperature system
Number current generating circuit includes PMOS tube M5, PMOS tube M6, resistance R2, PNP type triode Q1, PNP type triode Q2, work
Principle is identical as circuit shown in Fig. 2, since circuit constitutes negative feedback structure, X can be made equal with Y two o'clock voltage, M5 and M6
Size is identical, and Q2 is n times of Q1, therefore flows through the electric current on resistance R2, electric current IR2For positive temperature coefficient
Electric current.
Negative temperature parameter current generation circuit shown in Fig. 3 includes NMOS tube M1, NMOS tube M2, PMOS tube M3, PMOS tube
M4, resistance R1, its working principle is that: X can be made equal with Y two o'clock voltage since circuit constitutes negative feedback structure, i.e. M1 with
The grid voltage of M2 is equal,, flow through the electric current on R1, andFor negative temperature coefficient, therefore electric current IR1For negative temperature parameter current, flow through
M3 is equal with the electric current of M4 to be, also it is negative temperature parameter current.Negative temperature parameter current generation circuit of the present invention,
Not only the generation of negative temperature parameter current had been realized, but also has realized the function of amplifier, and due to IR1For (VEB1-VGS,M1)/R1, because
This can not need very big R1 i.e. and can produce and IR2The electric current of same order not only reduces circuit area, but also is conducive to base
The design of quasi- current output circuit.
Reference current output circuit shown in Fig. 3 includes PMOS tube M13, PMOS tube M14, its working principle is that: M13 with
M3 constitutes mirror current source, and the electric current for flowing through M3 is negative temperature coefficient, therefore flows through the electric current I of M13CTATIt also is negative temperature system
Number；M14 and M5, M6 constitute mirror current source, and the electric current for flowing through M5, M6 is positive temperature coefficient, therefore flows through the electric current I of M14PTAT
It also is positive temperature coefficient；Due to IR1With IR2For the electric current of same order, therefore the size of M13 and M14 is relatively, more has
Matched design is carried out conducive to M13 and M14, reasonable metal-oxide-semiconductor (M13 and M14) size is set, and by negative temperature parameter current ICTAT
With positive temperature coefficient electric current IPTATSuperposition, so that it may obtain temperature independent current reference electric current IREF.Base of the present invention
Quasi- current output circuit has the characteristics that structure is simple, is conducive to layout design.
Start-up circuit shown in Fig. 3 include PMOS tube M7, PMOS tube M8, PMOS tube M9, PMOS tube M10, PMOS tube M11,
NMOS tube M12, capacitor C1.Its working principle is that: assuming that powering on rear circuit, there are zero current (degeneracy) states, then flow through M5,
The electric current of branch where M6, M7 is 0, therefore the voltage of bottom crown is 0 on X point, Y point, capacitor C1, the grid voltage of M5, M6, M7
VB2Voltage is VDD；It is also 0 since C1 or more polar plate voltage is all 0, X point voltage, therefore PMOS tube M8, M9, M10, M11 are connected,
It provides electric current to pour into Q1, circuit is made slowly to be detached from nought state, it is final to work normally.The process of nought state is slowly detached from circuit
In, the electric current for flowing through M7 is gradually increased and charges to C1, increases C1 top crown voltage constantly, finally makes C1 top crown voltage
VDD, M7 enter depth linear zone, and no current flows through, due to C1 top crown voltage be VDD so that M8, M9, M10, M11 not
Conducting；During circuit is slowly detached from nought state, the voltage of Y point is gradually risen, and M12 is connected, and M10 source voltage is drawn
It down to 0 current potential, further ensures that M10 is complete switched off with M11, does not influence circuit normal operating conditions.Starting of the present invention
Circuit realizes powered on moment and provides starting current for benchmark circuit, and circuit is made to be detached from zero current condition, after circuit works normally,
Start-up circuit is automatically closed again, without power consumption, has the characteristics that starting rapidly, after start completion can dual closing.
Claims (2)
1. a kind of temperature independent low-power consumption reference current source, including start-up circuit, negative temperature parameter current generation circuit and
Positive temperature coefficient current generating circuit, it is characterised in that:
The negative temperature parameter current generation circuit includes NMOS tube M1, M2 and PMOS tube M3, M4 and resistance R1；Wherein: M1
Grid be connected to node Y；The grid of M2 is connected to nodes X；The source electrode of M1, M2 pass through resistance R1 after being connected with each other and are grounded GND；
The drain electrode of M1, M3 and the grid of M3, M4 are interconnected to constitute the first bias voltage terminal VB1；The drain electrode of M2, M4 are connected with each other structure
At the second bias voltage terminal VB2；The source electrode of M3, M4 are all connected to power vd D；
The positive temperature coefficient current generating circuit includes PMOS tube M5, M6 and PNP type triode Q1, Q2 and resistance R2；Its
In: the base stage of Q1, Q2 and the collector of Q1, Q2 are all grounded GND；The drain electrode of the emitter and M5 of Q1 is all connected to nodes X, Q2
Emitter node Y is connected to by resistance R2；The grid of M5, M6 are all connected to the second bias voltage terminal VB2；The source of M5, M6
Pole is all connected to power vd D；
The start-up circuit includes PMOS tube M7, M8, M9, M10, M11 and NMOS tube M12 and capacitor C1；Wherein: the grid of M7
Pole is connected to the second bias voltage terminal VB2；The source electrode of M7, M8 are all connected to power vd D；The drain electrode and capacitor C1 first end of M7
The grid of son and M8, M9, M10, M11 is connected with each other；The source electrode of capacitor C1 Second terminal and M12 are grounded GND；The grid of M12 connects
It is connected to node Y；The drain electrode of M12 is connected with each other with the drain electrode of M9, the source electrode of M10；The source electrode of the drain electrode connection M9 of M8；The leakage of M10
The source electrode of pole connection M11；The drain electrode of M11 is connected to nodes X.
2. low-power consumption reference current source according to claim 1, it is characterised in that further include reference current output circuit, institute
Stating reference current output circuit includes PMOS tube M13, M14；The grid of M13 is connected to the first bias voltage terminal VB1；The grid of M14
Pole is connected to the second bias voltage terminal VB2；The source electrode of M13, M14 are connect with power vd D；The drain electrode of M13, M14 are connected with each other structure
At reference current output end IREF。
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| Application Number | Priority Date | Filing Date | Title |
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| CN201910069815.8A CN109828630B (en) | 2019-01-24 | 2019-01-24 | Low-power-consumption reference current source irrelevant to temperature |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910069815.8A CN109828630B (en) | 2019-01-24 | 2019-01-24 | Low-power-consumption reference current source irrelevant to temperature |
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| CN109828630A true CN109828630A (en) | 2019-05-31 |
| CN109828630B CN109828630B (en) | 2020-06-12 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112486242A (en) * | 2020-11-06 | 2021-03-12 | 北京智芯微电子科技有限公司 | Current temperature coefficient control circuit based on reference source |
| CN113050743A (en) * | 2021-03-25 | 2021-06-29 | 电子科技大学 | Current reference circuit capable of outputting multiple temperature coefficients |
| CN115480612A (en) * | 2022-01-25 | 2022-12-16 | 中国船舶重工集团公司第七0七研究所 | Ultra-high stability bipolar current source circuit adaptive to wide-temperature environment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102375468A (en) * | 2010-08-23 | 2012-03-14 | 联咏科技股份有限公司 | Band gap reference circuit and band gap reference current source |
| US20130049729A1 (en) * | 2011-08-22 | 2013-02-28 | Hynix Semiconductor Inc. | Semiconductor circuit for outputting reference voltages |
| CN108897365A (en) * | 2018-08-27 | 2018-11-27 | 桂林电子科技大学 | A kind of high-precision current model reference voltage source |
-
2019
- 2019-01-24 CN CN201910069815.8A patent/CN109828630B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102375468A (en) * | 2010-08-23 | 2012-03-14 | 联咏科技股份有限公司 | Band gap reference circuit and band gap reference current source |
| US20130049729A1 (en) * | 2011-08-22 | 2013-02-28 | Hynix Semiconductor Inc. | Semiconductor circuit for outputting reference voltages |
| CN108897365A (en) * | 2018-08-27 | 2018-11-27 | 桂林电子科技大学 | A kind of high-precision current model reference voltage source |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112486242A (en) * | 2020-11-06 | 2021-03-12 | 北京智芯微电子科技有限公司 | Current temperature coefficient control circuit based on reference source |
| CN112486242B (en) * | 2020-11-06 | 2022-01-28 | 北京智芯微电子科技有限公司 | Current temperature coefficient control circuit based on reference source |
| CN113050743A (en) * | 2021-03-25 | 2021-06-29 | 电子科技大学 | Current reference circuit capable of outputting multiple temperature coefficients |
| CN113050743B (en) * | 2021-03-25 | 2022-03-08 | 电子科技大学 | Current reference circuit capable of outputting multiple temperature coefficients |
| CN115480612A (en) * | 2022-01-25 | 2022-12-16 | 中国船舶重工集团公司第七0七研究所 | Ultra-high stability bipolar current source circuit adaptive to wide-temperature environment |
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| CN109828630B (en) | 2020-06-12 |
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