CN108427468A - A kind of Low Drift Temperature fast transient response high PSRR bandgap voltage reference - Google Patents
A kind of Low Drift Temperature fast transient response high PSRR bandgap voltage reference Download PDFInfo
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- CN108427468A CN108427468A CN201810365618.6A CN201810365618A CN108427468A CN 108427468 A CN108427468 A CN 108427468A CN 201810365618 A CN201810365618 A CN 201810365618A CN 108427468 A CN108427468 A CN 108427468A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention belongs to Analogous Integrated Electronic Circuits technical field more particularly to a kind of Low Drift Temperature, fast transient response, the bandgap voltage references of high PSRR.The circuit includes band-gap reference generation circuit, error amplifier, start-up circuit three parts.The present invention generates the bandgap voltage reference of zero-temperature coefficient using the linear superposition of the positive temperature coefficient difference DELTA VBE of the base-emitter voltage VBE and VBE of two bipolar transistor negative temperature coefficients.Compared with traditional structure, the bandgap voltage reference temperature coefficient smaller that this circuit generates, and also start-up circuit is novel, has better transient response.
Description
Technical field
The invention belongs to Analogous Integrated Electronic Circuits technical field more particularly to a kind of Low Drift Temperature, fast transient response, high power supplys
Inhibit the bandgap voltage reference of ratio.
Background technology
As integrated circuit presses the development of Moore's Law, integrated circuit integrated level is higher and higher, and characteristic size is smaller and smaller,
Supply voltage is also lower and lower, and more stringent requirements are proposed for this performance and power consumption to chip.And at the same time, band-gap reference is made
To provide the part of reference in chip for entire circuit, small disturbance will seriously affect the stabilization of whole system, to produce
Raw big deviation.Therefore, band-gap reference is particularly important to the anti-interference ability of temperature and supply voltage.When temperature and supply voltage
In a wide range of interior fluctuation, it is desirable that the output of reference voltage source hardly changes, to provide the voltage value of stabilizer pole.
Fig. 1 show traditional bandgap voltage reference, by NPN triodes Q1, Q2, Q3, Q4 and resistance R1, R2, R3 with
And DC current source I is constituted.The circuit makes circuit be operated in specific one operating point using a feedback loop, point output electricity
Pressure is equal to the base emitter voltage VBE of Q1 plus a proportional voltage of the differential voltage of the base-emitter of Q1Q2
Value.Wherein Q1, Q2 and R3 generate electric current IPTAT, Q3 with absolute temperature is proportional to by being amplified to the variation of X point voltages
To the voltage clamping to X points.
The shortcomings that this reference source is that electric current I is determined by power supply, it will change with the variation of supply voltage；Feedback loop
Only there are one single tube Q3, and loop gain is small, low to the clamper precision of X points.
Invention content
The technical problem to be solved in the present invention is to provide a kind of band gap of Low Drift Temperature fast transient response high PSRR
Reference voltage source.
The present invention uses following technical scheme：
The present invention proposes a kind of Low Drift Temperature, fast transient response, the bandgap voltage reference of high PSRR, by band gap
Reference generating circuit, error amplifier, start-up circuit are constituted.The band-gap reference generation circuit includes：NPN triode Q1 and electricity
R1 series connection is hindered, NPN triode Q2 connects with resistance R2, and the collector of Q1 connects the negative terminal of R1, and the collector of Q2 meets the negative terminal of R2, Q2
Base stage connect the collector of Q1, the anode that the emitter of Q1 is shorted together rear connecting resistance R4 with the emitter of Q2 connects, Q1 with
The emitter area ratio of Q2 is 1:8, R4 negative terminal connects power ground；Connecting resistance R3's is negative after the anode of R1 and the anode short circuit of R2
End, the source level of the positive termination NMOS tube MN5 of R3, and as the output node VREF of bandgap voltage reference；The drain of MN5 meets PMOS
The drain of pipe MP6, the grid of MN5 are shorted together the output node VE as error amplifier with the drain of NMOS tube MN2；
The source level of MP6 connects with the negative terminal short circuit of resistance R7 as voltage node VDD, the grid of positive termination the positive supply VIN, MP6 of resistance R7
The grid short circuit of pole and PMOS tube MP9 are followed by the output end of phase inverter INV, and the input of INV terminates VDD.
The error amplifier includes：The collector of NPN triode Q3 connects the source level of NMOS tube MN1, and the base stage of Q3 meets Q1
Collector, the collector of NPN triode Q4 connects the source level of NMOS tube MN2, and the base stage of Q4 connects the collector of Q2, the transmitting of Q3
The anode of pole and connecting resistance R5 after Q4 emitter short circuits, the negative terminal of R5 connect power ground；After the grid of MN1 and the grid short circuit of MN2
Connect voltage node VREF, MN1 drain connect PMOS tube MP3 drain, the drain of MN2 meets the drain of the MP4 of PMOS tube, MP3
Grid leak short circuit post tensioned unbonded prestressed concrete connects the grid of MP4, and the source level of MP3 and the source level short circuit of MP4 are followed by VDD.
The start-up circuit includes：The source level of PMOS tube MP9 meets VDD, and the anode of the drain connecting resistance R6 of MP9, R6's is negative
End and the drain of NMOS tube MN11 and MN13, the grid short circuit of the MN7 of NMOS tube, the drain of MN7 and the drain short circuit of MP3, MN7
Source level connect the drain of NMOS tube MN8, the grid of MN8 meets VDD, and the drain of MN8 is grounded with the negative terminal short circuit of resistance R5, R6；
MN11 grid leak short circuit post tensioned unbonded prestressed concretes connect the grid of NMOS tube MN12, and the drain of MN12 connects the source level of MN11, and the drain of NMOS tube M10 connects
The source level of MN13, the grid of MN10 and the grid short circuit of MN13 are followed by VREF, and the source level of MN10 and the source level short circuit of MN12 are followed by
Ground.
Description of the drawings
Fig. 1 is traditional bandgap voltage reference
Fig. 2 is the Low Drift Temperature fast transient response high PSRR bandgap voltage reference integrated circuit figure of the present invention
Fig. 3 is the band-gap reference generation circuit figure of the present invention
Fig. 4 is the start-up circuit figure of the present invention
Specific implementation mode
Below in conjunction with the accompanying drawings, the present invention will be described in detail.
Low Drift Temperature fast transient response high PSRR bandgap voltage reference shown in Fig. 2 to realize the present invention is whole
Circuit diagram.The band-gap reference is made of band-gap reference generation circuit, error amplifier, start-up circuit.Error amplifier is by NPN crystalline substances
Body pipe Q3, Q4, NMOS tube MN1, MN2, MP3, MP4 and resistance R5 are constituted.The effect of the amplifier be voltage node A, B with
It constitutes negative feedback loop between output node VREF, improves loop gain, to which the voltage clamping to 2 points of A, B makes its approximate phase
Deng.The gain of the amplifier is：
AV=g3,4·{[gm1,2·(rCE3,4‖ro1,2)]‖ro3,4} (1)
Supply-voltage rejection ratio is：
(3) T is loop gain in formula.The loop gain known to (1) is very high, therefore supply-voltage rejection ratio very little.
Fig. 3 show band-gap reference generation circuit figure, by NPN triode Q1, Q2 resistance R1, R2, R3, R4 and NMOS tube
MN5 is constituted.The benchmark utilizes the base emitter voltage VBE and VBE of two bipolar transistor Q1, Q2 negative temperature coefficients
Positive temperature coefficient difference DELTA VBE linear superposition generate zero-temperature coefficient bandgap voltage reference.N is the emitter of Q2 and Q1
Area ratio, therefore Δ VBEExpression formula be：
The electric current for flowing through R2 isThe electric current is PTAT current.The resistance value of R1, R2 are equal, before described it is logical
The voltage for crossing clamping action node A, B of amplifier is identical, therefore the electric current for flowing through R1, R2 is equal, therefore the expression formula of VREF is：
By (5) formula it is found that selection is suitableIt can be obtained by the bandgap voltage reference of intimate zero temp shift.
Fig. 4 is the start-up circuit partial circuit diagram of the present invention, by NMOS tube MN7, MN8, MN10, MN11, MN12, MN13,
Resistance R6 and PMOS tube MP6 are constituted.When benchmark job is under zero current condition, VREF 0, MN10 are operated in MN13 and cut
Only area, but since MN11MN12 at this time is conducting state, therefore electric current flows through MN11, MN12, the current potential of node C is more than a threshold value
Voltage.MN8 is operated in deep triode region, therefore MN7 is connected, and D point current potentials drag down, and MP3, MP4 are opened, and MN5 grid potentials are drawn high, electricity
Stream flows into band-gap reference generation circuit.
Bandgap voltage reference gradually rises with the increase of electric current, is opened after the grid voltage raising of MN10, MN13, C
The current potential of point is pulled low, and MN7 cut-offs, branch current where MN7 is 0, amplifier normal work, until the value stabilization of VREF.The knot
The gain of structure is：
AVstart-up=gm13(ro13‖rR6) (6)
(6) resistance value of R6 and the small signal resistance value of MN13 are the same order of magnitude in formula, therefore start-up circuit gain is very big, are realized
Fast transient response.
Claims (4)
1. a kind of Low Drift Temperature, fast transient response, the bandgap voltage reference of high PSRR, which is characterized in that voltage source
By band-gap reference generation circuit (Bandgap Core), error amplifier (Error Amplifier), start-up circuit (start-
Up it) constitutes.
2. a kind of Low Drift Temperature according to claim 1, fast transient response, the bandgap voltage reference of high PSRR
Source, which is characterized in that the band-gap reference generation circuit includes：NPN triode Q1 is connected with resistance R1, NPN triode Q2 with
Resistance R2 series connection, the collector of Q1 connect the negative terminal of R1, and the collector of Q2 connects the negative terminal of R2, and the base stage of Q2 meets the collector of Q1, Q1
Emitter be shorted together the anode of rear connecting resistance R4 with the emitter of Q2 and connect, the emitter area ratio of Q1 and Q2 are 1:8,
The negative terminal of R4 connects power ground；The negative terminal of connecting resistance R3 after the anode of R1 and the anode short circuit of R2, the positive termination NMOS tube MN5's of R3
Source level, and as the output node VREF of bandgap voltage reference；The drain of MN5 connects the drain of PMOS tube MP6, the grid of MN5 with
The drain of NMOS tube MN2 is shorted together the output node VE as error amplifier；The source level of MP6 connects the negative terminal with resistance R7
Short circuit as voltage node VDD, the grid of positive termination positive supply VIN, MP6 of resistance R7 with after the grid short circuit of PMOS tube MP9
The output end of phase inverter INV is connect, the input of INV terminates VDD.
3. a kind of Low Drift Temperature according to claim 2, fast transient response, the bandgap voltage reference of high PSRR
Source, which is characterized in that the error amplifier includes：The collector of NPN triode Q3 connects the source level of NMOS tube MN1, the base of Q3
Pole connects the collector of Q1, and the collector of NPN triode Q4 connects the source level of NMOS tube MN2, and the base stage of Q4 meets the collector of Q2, Q3
Emitter and Q4 emitter short circuits after connecting resistance R5 anode, the negative terminal of R5 connects power ground；The grid of MN1 and the grid of MN2
Short circuit be followed by voltage node VREF, MN1 drain connect PMOS tube MP3 drain, the drain of MN2 connects the leakage of the MP4 of PMOS tube
Grade, MP3 grid leak short circuit post tensioned unbonded prestressed concretes connect the grid of MP4, and the source level of MP3 and the source level short circuit of MP4 are followed by VDD.
4. a kind of Low Drift Temperature according to claim 3, fast transient response, the bandgap voltage reference of high PSRR
Source, which is characterized in that the start-up circuit includes：The source level of PMOS tube MP9 meets VDD, the anode of the drain connecting resistance R6 of MP9,
The grid short circuit of the negative terminal of R6 and the MN7 of the drain of NMOS tube MN11 and MN13, NMOS tube, the drain of MN7 and the drain of MP3 are short
It connects, the source level of MN7 connects the drain of NMOS tube MN8, and the grid of MN8 meets VDD, and the drain of MN8 connects with the negative terminal short circuit of resistance R5, R6
Ground；MN11 grid leak short circuit post tensioned unbonded prestressed concretes connect the grid of NMOS tube MN12, and the drain of MN12 connects the source level of MN11, the leakage of NMOS tube M10
Grade connects the source level of MN13, and the grid of MN10 and the grid short circuit of MN13 are followed by VREF, the source level of MN10 and the source level short circuit of MN12
After be grounded.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810365618.6A CN108427468A (en) | 2018-04-23 | 2018-04-23 | A kind of Low Drift Temperature fast transient response high PSRR bandgap voltage reference |
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| CN201810365618.6A CN108427468A (en) | 2018-04-23 | 2018-04-23 | A kind of Low Drift Temperature fast transient response high PSRR bandgap voltage reference |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111061329A (en) * | 2020-01-09 | 2020-04-24 | 电子科技大学 | Band-gap reference circuit with high loop gain and double loop negative feedback |
| WO2021077846A1 (en) * | 2019-10-25 | 2021-04-29 | 北京智芯微电子科技有限公司 | Low dropout linear voltage regulator circuit and device |
| CN113485505A (en) * | 2021-07-05 | 2021-10-08 | 成都华微电子科技有限公司 | High-voltage low-power-consumption band-gap reference voltage source |
| CN114879793A (en) * | 2022-05-25 | 2022-08-09 | 思诺威科技(无锡)有限公司 | Novel band gap reference circuit |
-
2018
- 2018-04-23 CN CN201810365618.6A patent/CN108427468A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021077846A1 (en) * | 2019-10-25 | 2021-04-29 | 北京智芯微电子科技有限公司 | Low dropout linear voltage regulator circuit and device |
| CN111061329A (en) * | 2020-01-09 | 2020-04-24 | 电子科技大学 | Band-gap reference circuit with high loop gain and double loop negative feedback |
| CN113485505A (en) * | 2021-07-05 | 2021-10-08 | 成都华微电子科技有限公司 | High-voltage low-power-consumption band-gap reference voltage source |
| CN114879793A (en) * | 2022-05-25 | 2022-08-09 | 思诺威科技(无锡)有限公司 | Novel band gap reference circuit |
| CN114879793B (en) * | 2022-05-25 | 2024-01-19 | 思诺威科技(无锡)有限公司 | Novel band gap reference circuit |
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Application publication date: 20180821 |