CN110262606A - Band gap reference voltage source circuit - Google Patents
Band gap reference voltage source circuit Download PDFInfo
- Publication number
- CN110262606A CN110262606A CN201910541372.8A CN201910541372A CN110262606A CN 110262606 A CN110262606 A CN 110262606A CN 201910541372 A CN201910541372 A CN 201910541372A CN 110262606 A CN110262606 A CN 110262606A
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- Prior art keywords
- triode
- field
- effect tube
- current
- reference voltage
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
This disclosure relates to a kind of band gap reference voltage source circuit.The band gap reference voltage source circuit includes core circuit and bias current generative circuit, and core circuit includes triode.Bias current generative circuit includes field-effect tube corresponding with triode.The band gap reference voltage source circuit further includes compensation current generating circuit.Compensation current generating circuit includes the first current output terminal and the second current output terminal that the base stage of triodes different from core circuit is respectively connected with, and the ratio between current strength and the current strength of the second current output terminal output of the output of the first current output terminal are 2:1.This band gap reference voltage source circuit is while generating the reference voltage insensitive to temperature voltage, neither require the triode using big β value, it does not need to be superimposed additional field-effect tube and higher supply voltage, reduces device cost, simplify circuit structure yet.
Description
Technical field
The invention belongs to electronic circuit fields, and in particular to a kind of band gap reference voltage source circuit.
Background technique
Existing bandgap voltage reference generallys use substantially circuit structure as shown in Figure 1.As shown in Figure 1, this band
Gap reference voltage source includes core circuit 110 and the bias current generative circuit 120 being connected with core circuit 110.Fig. 2 shows figures
One specific example of circuit structure shown in 1.
As shown in Fig. 2, core circuit 110 includes the first triode Q111, the second triode Q112 and third transistor
Q113.In general, reference voltage source uses twin well process, forms NPN pipe as in core circuit 110 using DEEPNWELL
Triode.Core circuit 110 further includes first resistor R111 and second resistance R112.The collector of first triode Q111
(C) it is shorted with base stage (B), the emitter (E) of the first triode Q111 is grounded VSS130, the base stage of the first triode Q111 and the
The base stage of two triode Q112 is connected.The emitter of second triode Q112 is connected with the one end first resistor R111, first resistor
The R111 other end is grounded VSS130.The collector and base stage of third transistor Q113 is shorted, the emitter of third transistor Q113
It is connected with the one end second resistance R112, the second resistance R112 other end is grounded VSS130.
Bias current generative circuit 120 include first field-effect (FET) pipe MP121 corresponding with the first triode Q111,
And the corresponding second field-effect tube MP122 of the second triode Q112 and third field-effect corresponding with third transistor Q113
Pipe MP123.The drain electrode of first field-effect tube MP121 is connected with the collector of the first triode Q111, the first field-effect tube MP121
Source electrode connect voltage source VDD140, the grid of the first field-effect tube MP121 is connected simultaneously with the grid of the second field-effect tube MP122
It is connected with the drain electrode of the second field-effect tube MP122.The drain electrode of second field-effect tube MP122 and the collector of the second triode Q112
It is connected, the source electrode of the second field-effect tube MP122 connects voltage source VDD140.The drain electrode and the three or three of third field-effect tube MP123
The collector of pole pipe Q113 is connected, and the grid of third effect pipe MP123 and the grid of the first field-effect tube MP121 and second are imitated
Should pipe MP122 grid be connected.First field-effect tube MP121, the second field-effect tube MP122 and third field-effect tube MP123 can
To be PMOS tube.
Output voltage VREF150 is drawn from the collector of third transistor Q113.
Foregoing circuit structure has the advantages that 1) lesser imbalance；2) it can operate at lower voltage；3) it is not examining
In the case where considering base current, output voltage VREF150 is
VREF=[VBE (Q1)-VBE (Q2)] * R2/R1+VBE (Q3) (1)
Wherein, [VBE (Q1)-VBE (Q2)]/R1 is the emitter current of the second triode Q112.Due to [VBE (Q1)-
VBE (Q2)] * R2/R1 have positive temperature coefficient, be PTAT (full name Proportional to absolute temperature,
With absolute temperature is proportional) electric current, and VBE (Q3) have negative temperature coefficient, thus it is available one it is temperature-resistant
Voltage.
As shown in Fig. 2, the collector of the first triode Q111 needs to provide current to the first triode Q111 and the two or three
The base stage of pole pipe Q112, this connection type cause the first triode Q111 and the second triode Q112 collector current different
It causes, especially in the lesser situation of the β value of triode, so that being mirrored to the electric current and the two or three of the second field-effect tube MP123
The emitter current of pole pipe Q112 is inconsistent, and leads to following disadvantage: increasing mismatch and with poor temperature characterisitic.
To solve the above problems, a solution is the triode using big β value, however and not all technique can mention
For.Another solution is that the first triode Q111 and the second triode Q112 are used to the connection type of diode, this
Kind of connection type need additional field-effect tube such as NMOS tube be superimposed upon the first triode Q111 and the second triode Q112 it
On to stablize output, therefore higher voltage source VDD140 will be needed.
Summary of the invention
In view of the deficiencies in the prior art, the object of the present invention is to provide a kind of band gap reference voltage source circuits.It should
Band gap reference voltage source circuit neither requires while generating the reference voltage insensitive to temperature voltage using big β value
Triode does not need to be superimposed additional field-effect tube and higher supply voltage yet.
To achieve the above objectives, the disclosure the technical solution adopted is as follows:
A kind of band gap reference voltage source circuit is provided.The band gap reference voltage source circuit includes core circuit and biased electrical
Generative circuit is flowed, the core circuit includes triode, and the bias current generative circuit includes corresponding with the triode
Field-effect tube.The band gap reference voltage source circuit further includes compensation current generating circuit, the compensation current generating circuit packet
Include the first current output terminal and the second current output terminal being respectively connected with from the base stage of triodes different in the core circuit, institute
The ratio between the current strength of the first current output terminal output and the current strength of second current output terminal output are stated as 2:1.
Further, the compensation current generating circuit includes operational amplifier and the output with the operational amplifier
Two connected field-effect tube of end.
Further, described two field-effect tube are PMOS tube.
Further, the core circuit includes the first triode, the second triode and third transistor.
Further, the core circuit further include first resistor that one end is connected with the emitter-base bandgap grading of the second triode and one end with
The connected second resistance of the emitter-base bandgap grading of third transistor.
Further, first triode, second triode and the third transistor are NPN pipe.
Further, the bias current generative circuit includes the first field-effect tube corresponding with the first triode and second
Corresponding second field-effect tube of triode and third field-effect tube corresponding with third transistor, the grid of the first field-effect tube
The grid of pole, the grid of the second field-effect tube and third field-effect tube is connected and is connect with the drain electrode of the first field-effect tube.
Further, the inverting input terminal of the operational amplifier and normal phase input end are separately connected the current collection of the first triode
The collector of pole and the second triode.
Further, it is described compensation current generating circuit in described two field-effect tube grid with the operation amplifier
The output end of device is connected, and the drain electrode of one of field-effect tube connects the base of the first triode as first current output terminal
The drain electrode of the base stage of pole and the second triode, another field-effect tube connects third transistor as second current output terminal
Base stage.
Further, the drain electrode is used as described second as the field-effect tube of first current output terminal and the drain electrode
The ratio between mirror image of field-effect tube of current output terminal is 2:1.
The effect of the technical solution of the disclosure is as follows:
Band gap reference voltage source circuit described in the disclosure by the PTAT current that core circuit generates be separated into collector and
Base current.Colleeting comb electric current is generated by triode core circuit, and the base current then pressure by being made of operational amplifier
It controls current source to generate, generated collector current and base current flow through second resistance and third transistor and generate benchmark electricity
Pressure neither requires the triode using big β value, does not also need while generating the reference voltage insensitive to temperature voltage
It is superimposed additional field-effect tube and higher supply voltage, device cost is reduced, simplifies circuit structure.
Detailed description of the invention
Fig. 1 shows the substantially circuit structure of existing bandgap voltage reference；
Fig. 2 shows a specific examples of circuit structure shown in FIG. 1；
Fig. 3 shows the substantially circuit structure of band gap reference voltage source circuit described in an embodiment of the present disclosure；And
Fig. 4 shows a specific example of circuit structure shown in Fig. 3.
Specific embodiment
Present invention will be further described below with reference to the accompanying drawings and specific embodiments.
Fig. 3 shows the substantially circuit structure of band gap reference voltage source circuit described in an embodiment of the present disclosure.Such as Fig. 3 institute
Show, band gap reference voltage source circuit described in an embodiment of the present disclosure includes core circuit 310, the collection with core circuit 310
The compensation current generating circuit 330 electrode connected bias current generative circuit 320 and be connected with the base stage of core circuit 310.
Core circuit 310 includes triode.Bias current generative circuit 320 includes field-effect tube corresponding with triode.Compensate electric current
Generative circuit 330 includes the first current output terminal and second being respectively connected with from the base stage of triodes different in core circuit 310
Current output terminal.The ratio between current strength and the current strength of the second current output terminal output of the output of first current output terminal are 2:
1。
Compensate what current generating circuit 330 can be exported using current output terminal there are two tools and two current output terminals
The ratio between current strength is any type of circuit of 2:1.Fig. 4 shows an example of compensation current generating circuit.
As shown in figure 4, core circuit 310 includes the first triode Q311, the second triode Q312 and third transistor
Q313.First triode Q311, the second triode Q312 and third transistor Q313 can manage for NPN.Core circuit 310 also wraps
Include first resistor R311 and second resistance R312.The one end first resistor R311 is connected with the emitter-base bandgap grading of the second triode Q312, and second
The one end resistance R312 is connected with the emitter-base bandgap grading of third transistor Q313, the first resistor R311 other end, the second resistance R312 other end,
And first the emitter of triode Q311 be grounded VSS340 jointly.
Current biasing circuit 320 includes first field-effect tube MP321 corresponding with the first triode Q311 and the two or three pole
The corresponding second field-effect tube MP322 of pipe Q312 and third field-effect tube MP323 corresponding with third transistor Q313.The
One field-effect tube MP321, the second field-effect tube MP322 and third field-effect tube MP323 can be PMOS tube.
Core circuit 310 in Fig. 4 is compared with the core circuit 110 in Fig. 2, and difference includes the first triode Q311
No longer being connected with the connection type of diode, that is to say, that the base stage and collector of the first triode Q311 is no longer shorted, but
The base bias current of first triode Q311 is provided by compensation current generating circuit 330, and compensation current generating circuit 330 is
Voltage controlled current source, the current source by the first triode Q311 and the second triode Q312 in Fig. 4 collector differential electrical
Pressure determines that debiasing crystal field effects pipe, can be obtained this current source after this differential voltage is amplified by operational amplifier.This
Sample, the electric current flowed through in the first field-effect tube MP321 and the second field-effect tube MP322 respectively only have the first triode Q311 and
The collector current of second triode Q312, value are equal to
Ic=ie-ib=[VBE (Q1)-VBE (Q2)]/R1-ib (2)
Wherein, [VBE (Q1)-VBE (Q2)]/R1 had not only been the first triode Q311 emitter current, but also was the second triode
Q312 emitter current.Ib had not only been the base current of the first triode Q311, but also was the base current of the second triode Q312.
By mirror, the collector current of the first triode Q311 flows through third transistor Q313 and second resistance
R312.Due to lacking base current in collector, thus it cannot get preferable temperature characterisitic, in consideration of it, being generated by compensation electric current
The base current that circuit 330 generates is mirrored to third transistor Q313 and second resistance R312 in a manner of 2:1, in this way can
It obtains formula (1), and how low has on earth without the concern for the β value of triode, higher voltage source VDD350 will not be used.
Compensating current generating circuit 330 includes operational amplifier opa331 and the output with operational amplifier opa331
End connected two field-effect tube MP332 and MP333.The two field-effect tube MP332 and MP333 can be PMOS tube.Compensation
Output end of the grid of two field-effect tube MP332 and MP333 in current generating circuit 330 with operational amplifier opa331
It is connected, the drain electrode of one of field-effect tube MP332 connects the first triode Q311 and the two or three as the first current output terminal
The drain electrode of the base stage of pole pipe Q312, another field-effect tube MP333 connects third transistor Q313 as the second current output terminal
Base stage.The source electrode of two field-effect tube MP332 and MP333 are all connected with voltage source VDD350.Operational amplifier opa331's is anti-
Phase input terminal and normal phase input end are separately connected the collector of the first triode Q311 and the second triode Q312, to guarantee its electricity
Pressure is consistent, field-effect tube MP332 of the output end control drain electrode of operational amplifier opa331 as the first current output terminal, to produce
Raw suitable base current is supplied to the first triode Q311 and the second triode Q312, and drains and be used as the second current output terminal
Field-effect tube MP333 then mirror image drain electrode as the field-effect tube MP332 of the first current output terminal electric current to third transistor
Q313 and second resistance R312 drains defeated as the second electric current as the field-effect tube MP332 of the first current output terminal and drain electrode
The ratio between mirror image of field-effect tube MP333 of outlet is 2:1.In this way, available output voltage VREF360 is identical as formula (1)
Formula it is as follows:
VREF=[VBE (Q1)-VBE (Q2)] * R2/R1+VBE (Q3)
Bias current generative circuit 320 in Fig. 4 is compared with the bias current generative circuit 120 in Fig. 2, difference packet
The grid for including the grid of the first field-effect tube MP321, the grid of the second field-effect tube MP322 and third field-effect tube MP323 connects
It connects and is connect with the drain electrode of the first field-effect tube MP321.
The band gap reference voltage source circuit of disclosure above-described embodiment uses NPN building core circuit to generate to temperature electricity
Press insensitive reference voltage.The PTAT current that core circuit generates is separated into collector and base current.Colleeting comb electric current
It is generated by NPN core current, and base current is then generated by the voltage-controlled current source being made of operational amplifier.Above-mentioned generation
Collector current and base current flow through second resistance R312 and the 3rd NPN pipe Q313 and generate reference voltage, reduce device
Cost simplifies circuit structure.
It will be understood by those skilled in the art that method and system of the present invention is not limited to institute in specific embodiment
The embodiment stated, specific descriptions above are intended merely to explain the purpose of the present invention, are not intended to limit the present invention.This field skill
Art personnel can derive other implementation manners according to the technical scheme of the present invention, and also belong to the scope of the technical innovation of the present invention, this
The protection scope of invention is defined by the claims and their equivalents.
Claims (10)
1. a kind of band gap reference voltage source circuit, which is characterized in that including core circuit and bias current generative circuit, the core
Electrocardio road includes triode, and the bias current generative circuit includes field-effect tube corresponding with the triode, the band gap
Reference voltage source circuit further include compensation current generating circuit, the compensation current generating circuit include in the core circuit
The first current output terminal and the second current output terminal that the base stage of different triodes is respectively connected with, first current output terminal are defeated
The ratio between current strength and the current strength of second current output terminal output out are 2:1.
2. band gap reference voltage source circuit as described in claim 1, which is characterized in that the compensation current generating circuit includes
Operational amplifier and two field-effect tube being connected with the output end of the operational amplifier.
3. band gap reference voltage source circuit as claimed in claim 2, which is characterized in that described two field-effect tube are PMOS
Pipe.
4. band gap reference voltage source circuit as claimed in claim 2 or claim 3, which is characterized in that the core circuit includes first
Triode, the second triode and third transistor.
5. band gap reference voltage source circuit as claimed in claim 4, which is characterized in that the core circuit further include one end with
The second resistance that the connected first resistor of the emitter-base bandgap grading of second triode and one end are connected with the emitter-base bandgap grading of third transistor.
6. band gap reference voltage source circuit as claimed in claim 4, which is characterized in that first triode, described second
Triode and the third transistor are NPN pipe.
7. band gap reference voltage source circuit as claimed in claim 4, which is characterized in that the bias current generative circuit includes
And corresponding first field-effect tube of the first triode, the second field-effect tube corresponding with the second triode and with the three or three pole
Manage corresponding third field-effect tube, the grid of the grid of the first field-effect tube, the grid of the second field-effect tube and third field-effect tube
Pole connects and connect with the drain electrode of the first field-effect tube.
8. band gap reference voltage source circuit as claimed in claim 4, which is characterized in that the anti-phase input of the operational amplifier
End and normal phase input end are separately connected the collector of the first triode and the collector of the second triode.
9. band gap reference voltage source circuit as claimed in claim 4, which is characterized in that in the compensation current generating circuit
The grid of described two field-effect tube is connected with the output end of the operational amplifier, and the drain electrode of one of field-effect tube is made
The base stage of the first triode and the base stage of the second triode, the leakage of another field-effect tube are connected for first current output terminal
Base stage of the pole as second current output terminal connection third transistor.
10. band gap reference voltage source circuit as claimed in claim 9, which is characterized in that the drain electrode is as first electricity
Flowing the ratio between the mirror image of field-effect tube of the field-effect tube and the drain electrode of output end as second current output terminal is 2:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910541372.8A CN110262606A (en) | 2019-06-21 | 2019-06-21 | Band gap reference voltage source circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910541372.8A CN110262606A (en) | 2019-06-21 | 2019-06-21 | Band gap reference voltage source circuit |
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| CN110262606A true CN110262606A (en) | 2019-09-20 |
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| CN201910541372.8A Pending CN110262606A (en) | 2019-06-21 | 2019-06-21 | Band gap reference voltage source circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111026221A (en) * | 2019-12-12 | 2020-04-17 | 芯创智（北京）微电子有限公司 | Voltage reference circuit working under low power supply voltage |
| CN115390611A (en) * | 2022-09-13 | 2022-11-25 | 思瑞浦微电子科技（苏州）股份有限公司 | Band gap reference circuit, base current compensation method and chip |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5581174A (en) * | 1993-12-03 | 1996-12-03 | U.S. Philips Corporation | Band-gap reference current source with compensation for saturation current spread of bipolar transistors |
| CN1928766A (en) * | 2005-09-07 | 2007-03-14 | 株式会社瑞萨科技 | Reference voltage generating circuit, a semiconductor integrated circuit and a semiconductor integrated circuit apparatus |
| CN1967428A (en) * | 2005-11-16 | 2007-05-23 | 联发科技股份有限公司 | Bandgap reference circuits |
| CN101052933A (en) * | 2004-10-08 | 2007-10-10 | 飞思卡尔半导体公司 | Refrence circuit |
| CN103760944A (en) * | 2014-02-10 | 2014-04-30 | 绍兴光大芯业微电子有限公司 | Operational-amplifier-free internal power supply structure capable of allowing base electrode current compensation to be achieved |
-
2019
- 2019-06-21 CN CN201910541372.8A patent/CN110262606A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5581174A (en) * | 1993-12-03 | 1996-12-03 | U.S. Philips Corporation | Band-gap reference current source with compensation for saturation current spread of bipolar transistors |
| CN101052933A (en) * | 2004-10-08 | 2007-10-10 | 飞思卡尔半导体公司 | Refrence circuit |
| CN1928766A (en) * | 2005-09-07 | 2007-03-14 | 株式会社瑞萨科技 | Reference voltage generating circuit, a semiconductor integrated circuit and a semiconductor integrated circuit apparatus |
| CN1967428A (en) * | 2005-11-16 | 2007-05-23 | 联发科技股份有限公司 | Bandgap reference circuits |
| CN103760944A (en) * | 2014-02-10 | 2014-04-30 | 绍兴光大芯业微电子有限公司 | Operational-amplifier-free internal power supply structure capable of allowing base electrode current compensation to be achieved |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111026221A (en) * | 2019-12-12 | 2020-04-17 | 芯创智（北京）微电子有限公司 | Voltage reference circuit working under low power supply voltage |
| CN115390611A (en) * | 2022-09-13 | 2022-11-25 | 思瑞浦微电子科技（苏州）股份有限公司 | Band gap reference circuit, base current compensation method and chip |
| CN115390611B (en) * | 2022-09-13 | 2024-01-23 | 思瑞浦微电子科技（苏州）股份有限公司 | Band gap reference circuit, base current compensation method and chip |
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