CN209433274U - A kind of constant current generative circuit structure of automatic biasing - Google Patents
A kind of constant current generative circuit structure of automatic biasing Download PDFInfo
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- CN209433274U CN209433274U CN201920524442.4U CN201920524442U CN209433274U CN 209433274 U CN209433274 U CN 209433274U CN 201920524442 U CN201920524442 U CN 201920524442U CN 209433274 U CN209433274 U CN 209433274U
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Abstract
The utility model discloses a kind of constant current generative circuit structures of automatic biasing, PTAT current with positive temperature coefficient is generated by built-in feed circuit based on automatic biasing and with the bias current of negative temperature coefficient, by to PTAT current and bias current summation, a constant output electric current is generated, is realized and the weak relevant constant current output such as additional power source voltage, temperature and technological parameter.The utility model circuit structure can realize the constant current function of automatic biasing using less device, relatively simple circuit structure, it is not only suitable for the biasing of the working environment of low-tension supply, it is also applied for the biasing of the application of high voltage power supply, biasing precision is higher and low in energy consumption.
Description
Technical field
The utility model relates to technical field of electricity more particularly to a kind of constant current generative circuit structures of automatic biasing.
Background technique
In various electrical systems, constant current circuit is an indispensable module.Existing constant-current circuit
It is achieved in that and first generates constant voltage, then constant output current is generated using amplifier.Existing implementation needs more
Device is typically employed in the large-scale system of comparison.Since existing implementation circuit structure device is more, power consumption is big, one
It, can opposite waste of resource especially in the circuit system that high voltage/low voltage power supply coexists in a little relatively small-scale systems.
With reference to Fig. 1, existing auto bias circuit structural schematic diagram.The auto bias circuit includes the first transistor M1, second
Transistor M2, third transistor M3 and the 4th transistor M4, first-second transistor M1, M2 is used in the above transistor
PMOS transistor, third-the four transistor M3, M4 use NMOS transistor.The grid of the first transistor M1 is electrically connected institute
The grid of second transistor M2 is stated, wherein forms a bias voltage vb on grid；The source electrode of the first transistor M1 accesses electricity
Source voltage VCC, the output node vs to drain as the auto bias circuit；The drain electrode of the second transistor M2 and its grid
It is shorted and is electrically connected the drain electrode of the third transistor M3, source electrode accesses supply voltage VCC；The first transistor M1 and institute
It states second transistor M2 cascade and constitutes current mirror；The third transistor M3 and the 4th transistor M4 cascade structure
At current mirror；Input terminal of the drain electrode of the third transistor M3 as the current mirror, and its source electrode is grounded；Described 4th is brilliant
The drain electrode of body pipe M4 is shorted with its grid and the output end as the current mirror, and its source electrode is grounded.Existing auto bias circuit,
Structure is simple, but export electric current have to the technological parameter of circuit, the system temperature of work and voltage it is stronger related
Property, it is not suitable for accurate biasing circuit.
Therefore, the constant current function that automatic biasing how is realized using less device, relatively simple circuit structure, was both applicable in
In the biasing of the working environment of low-tension supply, be also applied for the biasing of the application of high voltage power supply, biasing precision it is higher and
It is low in energy consumption, become constant-current circuit technology and develops technical problem urgently to be resolved.
Utility model content
The purpose of this utility model is that for the technical problems in the prior art, providing a kind of perseverance of automatic biasing
Generative circuit structure is flowed, the constant current function of automatic biasing can be realized using less device, relatively simple circuit structure, was both fitted
The biasing of working environment for low-tension supply, is also applied for the biasing of the application of high voltage power supply, biasing precision is higher,
And it is low in energy consumption.
To achieve the above object, the utility model provides a kind of constant current generative circuit structure of automatic biasing；The constant current
Generative circuit structure include: PTAT current generation unit, the first bias voltage generation unit, the second bias voltage generation unit with
And constant current generation unit；The PTAT current generation unit, for passing through external starting electricity in the constant current generative circuit structure
Road starting after, generate have positive temperature coefficient PTAT current, and according to the PTAT current be respectively formed an image current with
An and feedback current；The first bias voltage generation unit forms first partially by mirror image for receiving the feedback current
It sets electric current and exports to the PTAT current generation unit and the second bias voltage generation unit, to generate first partially
Set voltage, wherein the PTAT current generation unit and the first bias voltage generation unit form closed-loop feedback circuit；Institute
The second bias voltage generation unit is stated, for obtaining first bias current and generating the second bias voltage, described second partially
Set voltage while the bias voltage as the PTAT current generation unit；The constant current generation unit, for obtaining described
The difference of one bias voltage and second bias voltage, and generate second bias current with negative temperature coefficient, Yi Jiyong
In receiving the image current, and generated according to the image current and second bias current temperature independent constant
Electric current simultaneously exports.
Utility model has the advantages that the constant current generative circuit structure for the automatic biasing that the utility model is proposed, is realized
To the weak relevant constant current output such as additional power source voltage, temperature and technological parameter.The utility model circuit structure is not only fitted
The biasing of working environment for low-tension supply, while it being also applied for the biasing of the application of high voltage power supply, and bias accurate
It spends higher.Constant current generated, which both can choose, is output to external voltage source as output voltage, can also be output to this
To generate existing bias voltage inside utility model circuit structure.Constant voltage is first generated relative to existing circuit structure,
Again in such a way that amplifier generates constant output current, the utility model circuit structure uses less device and lower
Power consumption, and the MOS transistor device resistance to pressure requirement in circuit structure is lower, it is with the obvious advantage.
Detailed description of the invention
Fig. 1, existing auto bias circuit structural schematic diagram；
Fig. 2, the constant current generative circuit structural schematic diagram of the utility model automatic biasing；
Fig. 3, the circuit diagram of the constant current generative circuit structure first embodiment of the utility model automatic biasing；
Fig. 4, the circuit diagram of the constant current generative circuit structure second embodiment of the utility model automatic biasing.
Specific embodiment
The embodiments of the present invention is described below in detail, the example of the embodiment is shown in the accompanying drawings, wherein
Same or similar label indicates same or similar element or element with the same or similar functions from beginning to end.Lead to below
It crosses the embodiment being described with reference to the drawings to be exemplary, is only used for explaining the utility model, and should not be understood as practical to this
Novel limitation.In addition, the utility model repeat reference numerals and/or reference letter in different examples, this repetition be for
Simplified and clear purpose, itself do not indicate discussed various embodiments and/or be arranged between relationship.
Referring to FIG. 2, the constant current generative circuit structural schematic diagram of the utility model automatic biasing.The utility model automatic biasing
Constant current generative circuit structure, including PTAT current generation unit 21, the first bias voltage generation unit 22, the second bias voltage are raw
At unit 23 and constant current generation unit 24.
The PTAT current generation unit 21 is electrically connected the first bias voltage generation unit 22 and the perseverance
Generation unit 24 is flowed, for after the constant current generative circuit structure is started by external start-up circuit, generating to have positive temperature
The PTAT current of coefficient, and an image current is respectively formed according to the PTAT current and is exported to the constant current generation unit 24,
And it forms a feedback current and exports to the first bias voltage generation unit 22.Specifically, the PTAT current generates list
Member 22 includes the first triode, the second triode, first resistor, third transistor, the 4th transistor, the 5th transistor and the 6th
Transistor；First triode matches generation positive feedback current with the first resistor, and is input to the third crystal
The input terminal of pipe；Second triode is matched with the 4th transistor generates the PTAT current, passes through the described 5th
Negative feedback current is formed after transistor mirror picture, and is input to the input terminal of the third transistor；The third transistor is to institute
It states positive feedback current and the negative feedback current is summed, form the feedback current and export；6th transistor pair
The PTAT current carries out mirror image, forms the image current and exports.PTAT(Proportional To Absolute
Temperature, and absolute temperature is proportional) electric current refers to output size of current and absolute temperature (thermodynamic temperature) at just
The electric current of proportionate relationship, the i.e. relationship of output size of current I (unit: ampere) and environment temperature T (unit: Kelvin) where it
Meet I=AT (A is Fixed constant).
The first bias voltage generation unit 22 is electrically connected the PTAT current generation unit 21, described second partially
Voltage generating unit 23 and the constant current generation unit 24 are set, for receiving the feedback current, forms first by mirror image
Bias current is simultaneously exported to the PTAT current generation unit 21 and the second bias voltage generation unit 23, to generate
First bias voltage is simultaneously exported to the constant current generation unit 24.That is, the PTAT current generation unit 21 and described first is inclined
It sets voltage generating unit 22 and forms closed-loop feedback circuit.Specifically, the first bias voltage generation unit 21 includes: the first crystalline substance
Body pipe and second transistor；The second transistor, for receiving the feedback current；The first transistor is described the
The mirror image output stage of two-transistor, for carrying out mirror image to the feedback current, forming the first bias current and exporting to described
In the load that PTAT current generation unit 21 and the second bias voltage generation unit 23 are constituted, to generate first partially
Set voltage.Specifically, first bias voltage is for starting the constant current generation unit 24.
The second bias voltage generation unit 23 is electrically connected the first bias voltage generation unit 21 and institute
PTAT current generation unit 21 is stated, for receiving first bias current and generating the second bias voltage, second biasing
Voltage bias voltage as the PTAT current generation unit simultaneously.Specifically, the second bias voltage generation unit 23
It may include third transistor and the 7th transistor；The third transistor receives described in first bias current and generation
Second bias voltage (transistor biasing of the 7th transistor)；Load of 7th transistor as the third transistor,
For obtaining first bias voltage (transistor biasing of the 7th transistor adds the triode bias of third transistor) and institute
The difference of the second bias voltage (transistor biasing of the 7th transistor) is stated, that is, the difference is triode bias.Described
Two bias voltage generation units 23 may include the 9th transistor, third transistor and the 7th transistor；9th crystal
Pipe is for carrying out mirror image to the feedback current, to form first bias current；The third transistor receives described the
One bias current generates second bias voltage, and exports to the PTAT current generation unit 21；7th transistor
As the load of the third transistor, for obtaining the difference of first bias voltage Yu second bias voltage.
The constant current generation unit 24, for obtaining the difference of first bias voltage Yu second bias voltage,
To generate second bias current with negative temperature coefficient, and for receiving the image current, and according to the mirror image
Electric current and second bias current generate temperature independent constant current Iout and export.Specifically, the constant current is raw
It include the 8th transistor and second resistance at unit 24；8th transistor and the second bias voltage generation unit 23
The 7th transistor be homotype device, so as to replicate voltage thereon.8th transistor receives described first
Bias voltage obtains the difference of first bias voltage Yu second bias voltage to be connected, by its source electrode by institute
It states difference load and forms the second bias current in the second resistance；The source electrode of 8th transistor simultaneously receives the mirror image
Electric current, and by adjusting the ratio of the image current and second bias current, to the image current and described
Two bias currents are summed, and are generated temperature independent constant current Iout and are exported.
The constant current generative circuit structure for the automatic biasing that the utility model is proposed is a kind of built-in feedback based on automatic biasing
Circuit structure.The utility model circuit structure cleverly realizes and the weak phase such as additional power source voltage, temperature and technological parameter
The constant current output of pass.The utility model circuit structure is applicable not only to the biasing of the working environment of low-tension supply, is also suitable simultaneously
Biasing in the application of high voltage power supply, and it is higher to bias precision.Constant current generated, which both can choose, to be output to
External voltage source can also be output to inside the utility model circuit structure as output voltage to generate existing biased electrical
Pressure.Constant voltage is first generated relative to existing circuit structure, then in such a way that amplifier generates constant output current, this is practical
Novel circuit configuration uses less device and lower power consumption, and the MOS transistor device resistance to pressure requirement in circuit structure
It is lower, it is with the obvious advantage.
Referring to FIG. 3, the circuit diagram of the constant current generative circuit structure first embodiment of the utility model automatic biasing, figure
Arrow outside middle circuit connecting wire is used to illustrate the flow direction of loop.In the present embodiment, 8 insulating gate type field effect tubes are used
(metal-oxide-semiconductor) and 3 double pole triodes (BJT pipe) constitute the built-in feedback circuit structure based on automatic biasing, cleverly realize
To the weak relevant constant current output such as additional power source voltage, temperature and technological parameter.
Specifically, the PTAT current generation unit 21 includes the first triode Q1, the second triode Q2, first resistor
R1, third transistor M3, the 4th transistor M4, the 5th transistor M5 and the 6th transistor M6.In the present embodiment, described first
Triode Q1 and the second triode Q2 is PNP type triode, the third transistor M3, the 4th transistor M4,
Five transistor M5 and the 6th transistor M6 are NMOS transistor (can also be NPN type triode).
The base stage of the first triode Q1 is electrically connected the base stage of the second triode Q2, and emitter passes through described the
One resistance R1 is electrically connected to the output node vs of the first bias voltage generation unit 22, and collector is electrically connected described
The drain electrode of the grid of third transistor M3 and the 5th transistor M5；The first triode Q1 and first resistor R1
Generation positive feedback current is matched, and is input to the grid of the third transistor M3.
The emitter of the second triode Q2 is electrically connected to the output node of the first bias voltage generation unit 21
Vs, collector are electrically connected the drain electrode of the 4th transistor M4；The grid of the 4th transistor M4 drains short circuit simultaneously with it
It is electrically connected the grid of the 5th transistor M5 and the grid of the 6th transistor M6, source electrode ground connection；5th transistor
The source electrode of M5 is grounded；The second triode Q2 is matched with the 4th transistor M4 generates the PTAT current, passes through institute
Negative feedback current is formed after stating the 5th transistor M5 mirror image, and the third is input to by the drain electrode of the 5th transistor M5
The grid of transistor M3.
The drain electrode of the third transistor M3 is electrically connected the input node vg of the first bias voltage generation unit 22,
Source electrode ground connection；The third transistor M3 sums to the positive feedback current and the negative feedback current, is formed described anti-
Supply current is simultaneously exported to the input node vg of the first bias voltage generation unit 22.
The drain electrode of the 6th transistor M6 accesses the constant current generation unit 24, source electrode ground connection；For to described
PTAT current carries out mirror image, forms the image current and exports to the constant current generation unit 24.
That is, the utility model on the basis of existing auto bias circuit by being added triode Q1, Q2, resistance R1, MOS
Pipe M5, M6 to form PTAT current inside auto bias circuit, and sum the output of positive-negative feedback electric current instead by metal-oxide-semiconductor M3
Supply current exports image current by metal-oxide-semiconductor M6 mirror image.
Specifically, the first transistor M1 and second transistor M2 that constitute the first bias voltage generation unit 22 are all made of
PMOS transistor；The grid of the first transistor M1 is electrically connected the grid of the second transistor M2, and source electrode accesses power supply
Voltage VCC, the output node vs to drain as the first bias voltage generation unit 22；The leakage of the second transistor M2
Pole is shorted the input node vg as the first bias voltage generation unit 22 with its grid and is electrically connected the PTAT current
Generation unit 21, source electrode access the supply voltage VCC；The i.e. described the first transistor M1 and the second transistor M2 are total to grid
Common source constitutes current mirror.The second transistor M2, for receiving the feedback current by the input node vs；Described
One transistor M1 is the mirror image output stage of the second transistor M2, for carrying out mirror image to the feedback current, forms first
Bias current simultaneously exports raw to the PTAT current generation unit 21 and second bias voltage through the output node vs
At the load that unit 23 is constituted, to generate the first bias voltage Vov (Vov=Vgs+Vbe), the first bias voltage Vov
For starting the constant current generation unit 24.
Specifically, the second bias voltage generation unit 23 includes third transistor Q3 and the 7th transistor M7；Institute
Stating third transistor Q3 is PNP type triode, and the 7th transistor M7 is NMOS transistor.The base of the third transistor Q3
Pole and its collector are shorted, and are respectively electrically connected to the drain electrode and the PTAT current generation unit of the 7th transistor M7
21 (being specially electrically connected the base stage of the second triode Q2), emitter are electrically connected to first bias voltage and generate list
The output node vs of member 22；The grid of the 7th transistor M7 and its short circuit that drains, source electrode ground connection.The third transistor
Q3 receives first bias current and generates the second bias voltage Vgs in the drain terminal of the 7th transistor M7 and export to described
PTAT current generation unit 21.Load of the 7th transistor M7 as the third transistor Q3, to obtain described
The difference of one bias voltage Vov and the second bias voltage Vgs, i.e. Vov-Vgs=(Vbe+Vgs)-Vgs=Vbe, wherein
Vbe is the triode bias between third transistor Q3 base stage and emitter.That is, the utility model passes through in existing self-bias
On the basis of circuits be added triode Q3, metal-oxide-semiconductor M7, thus formed on metal-oxide-semiconductor M7 first bias voltage with it is described
The difference Vbe of second bias voltage, this difference Vbe are replicated by the metal-oxide-semiconductor M8 in constant current generation unit 24, and pass through metal-oxide-semiconductor
The source electrode of M8 loads difference Vbe on the second resistance R2 for being connected to its source electrode, to obtain the second bias current.
Specifically, the constant current generation unit 24 includes the 8th transistor M8 and second resistance R2；8th crystal
Pipe M8 is NMOS transistor.The 8th transistor M8 and the 7th transistor M7 is homotype device, so as to replicate
The voltage on the 7th transistor M7 is stated, i.e. on duplication difference Vbe to the second resistance R2 for being connected to its source electrode.8th crystal
The grid of pipe M8 is electrically connected to the output node vs of the first bias voltage generation unit 22, drain electrode access output voltage
Source, source electrode are grounded by the second resistance R2, while being electrically connected the drain electrode of the 6th transistor M6.8th crystal
The grid of pipe M8 receives the first bias voltage Vgs conducting by the output node vs, to replicate the 7th crystal
The difference Vbe of the first bias voltage and the second bias voltage on pipe M7, and loaded difference Vbe described the by its source electrode
The second bias current I (R2)=Vbe/R2 is formed on two resistance R2, Vbe/R2 is the electric current with negative temperature coefficient.Described
Eight transistor M8 are as efferent duct, and second formed on the image current and second resistance R2 that the 6th transistor M6 mirror image exports is partially
After setting electric current addition, constant output electric current Iout is obtained in its source electrode.Iout=I (M8)+I (R2)=PTAT+Vbe/R2,
Middle PTAT is the electric current with positive temperature coefficient, and Vbe/R2 is the electric current with negative temperature coefficient, by adjusting the two electric currents
The ratio of component, output electric current Iout can be designed to temperature independent.To realize with additional power source voltage, temperature and
The weak relevant constant current output such as technological parameter.
In the present embodiment, 8 metal-oxide-semiconductors are all made of NMOS transistor, 3 BJT pipes in addition to the first transistor M1 and M2
It is all made of PNP pipe.It should be noted that metal-oxide-semiconductor can also using PMOS transistor, bipolar transistor (NPN, PNP),
BICMOS etc., BJT pipe can also be managed using NPN, and corresponding circuit connecting relation adjusts accordingly, and details are not described herein again.
The utility model circuit structure is applicable not only to the biasing of the working environment of low-tension supply, while being also applied for high pressure
The biasing of the application of power supply, and it is higher to bias precision.If supply voltage VCC supports high voltage, the utility model circuit
Device only has the drain-source needs of the first transistor M1, second transistor M2 high pressure resistant in structure, and other devices are only required to be low pressure
Device.When output voltage source Vout is high voltage power supply, device only has the 8th transistor M8 in the utility model circuit structure
Drain electrode need it is high pressure resistant；When output voltage source Vout is low-tension supply, the drain electrode of the 8th transistor M8 only needs resistance to low pressure.This
Utility model circuit structure uses less device and lower power consumption, and the MOS transistor device resistance to pressure in circuit structure
It is required that it is lower, it is with the obvious advantage.
Referring to FIG. 4, the circuit diagram of the constant current generative circuit structure second embodiment of the utility model automatic biasing, figure
Arrow outside middle circuit connecting wire is used to illustrate the flow direction of loop.With first embodiment shown in Fig. 3 the difference is that, this
In embodiment, the second bias voltage generation unit 23 includes third transistor Q3, the 7th transistor M7 and the 9th crystal
Pipe M9；The 9th transistor M9 is for obtaining first bias current, and the third transistor Q3 is for receiving described the
One bias current generates second bias voltage and exports to the PTAT current generation unit, the 7th transistor M7,
For obtaining the difference of first bias voltage Yu second bias voltage.
Specifically, the third transistor Q3 is PNP type triode, the 7th transistor M7 is NMOS transistor, institute
Stating the 9th transistor M9 is PMOS transistor.The grid of the 9th transistor M9 is electrically connected first bias voltage and generates list
The grid of the first transistor M1 of member 22, source electrode access the supply voltage VCC, drain electrode electrical connection the described 3rd 3
The emitter of pole pipe Q3；The base stage of the third transistor Q3 and its collector are shorted, and it is brilliant to be respectively electrically connected to the described 7th
The drain electrode of body pipe M7 and the PTAT current generation unit 21 (being specially electrically connected the base stage of the second triode Q2)；Institute
State the grid and its short circuit that drains of the 7th transistor M7, source electrode ground connection.
The above is only the preferred embodiment of the utility model, it is noted that for the common skill of the art
Art personnel can also make several improvements and modifications without departing from the principle of this utility model, these improvements and modifications
Also it should be regarded as the protection scope of the utility model.
Claims (9)
1. a kind of constant current generative circuit structure of automatic biasing, which is characterized in that the constant current generative circuit structure includes: PTAT electricity
Flow generation unit, the first bias voltage generation unit, the second bias voltage generation unit and constant current generation unit；
The PTAT current generation unit is used for after the constant current generative circuit structure is started by external start-up circuit, raw
An image current and a feedback electricity are respectively formed at the PTAT current with positive temperature coefficient, and according to the PTAT current
Stream；
The first bias voltage generation unit forms the first bias current simultaneously by mirror image for receiving the feedback current
It exports to the PTAT current generation unit and the second bias voltage generation unit, so that the first bias voltage is generated,
Wherein, the PTAT current generation unit and the first bias voltage generation unit form closed-loop feedback circuit；
The second bias voltage generation unit, it is described for obtaining first bias current and generating the second bias voltage
Second bias voltage bias voltage as the PTAT current generation unit simultaneously；
The constant current generation unit for obtaining the difference of first bias voltage Yu second bias voltage, and generates
The second bias current with negative temperature coefficient, and for receiving the image current, and according to the image current and
Second bias current generates temperature independent constant current and output.
2. constant current generative circuit structure as described in claim 1, which is characterized in that the PTAT current generation unit includes the
One triode, the second triode, first resistor, third transistor, the 4th transistor, the 5th transistor and the 6th transistor；
First triode matches generation positive feedback current with the first resistor, and is input to the third transistor
Input terminal；
Second triode is matched with the 4th transistor generates the PTAT current, passes through the 5th transistor mirror
Negative feedback current is formed as after, and is input to the input terminal of the third transistor；
The third transistor sums to the positive feedback current and the negative feedback current, forms the feedback current simultaneously
Output；
6th transistor carries out mirror image to the PTAT current, forms the image current and exports.
3. constant current generative circuit structure as claimed in claim 2, which is characterized in that first triode and described second
Triode is PNP type triode, and the third transistor, the 4th transistor, the 5th transistor and the 6th transistor are
NMOS transistor；
The base stage of first triode is electrically connected the base stage of second triode, and emitter passes through the first resistor electricity
It is connected to the output node of the first bias voltage generation unit, collector is electrically connected the grid of the third transistor
The drain electrode of pole and the 5th transistor；
The emitter of second triode is electrically connected to the output node of the first bias voltage generation unit, collector
It is electrically connected the drain electrode of the 4th transistor；
The drain electrode of the third transistor is electrically connected the input node of the first bias voltage generation unit, source electrode ground connection；
The grid of 4th transistor drains with it and is shorted and is electrically connected the grid and the 6th crystal of the 5th transistor
The grid of pipe, source electrode ground connection；
The source electrode of 5th transistor is grounded；
The drain electrode of 6th transistor accesses the constant current generation unit, source electrode ground connection.
4. constant current generative circuit structure as described in claim 1, which is characterized in that the first bias voltage generation unit packet
It includes: the first transistor and second transistor；
The second transistor, for receiving the feedback current；
The first transistor is the mirror image output stage of the second transistor, for carrying out mirror image, shape to the feedback current
It at the first bias current and exports, to generate first bias voltage.
5. constant current generative circuit structure as claimed in claim 4, which is characterized in that the first transistor, second crystalline substance
Body pipe is PMOS transistor；
The grid of the first transistor is electrically connected the grid of the second transistor, and source electrode accesses supply voltage, drain electrode
As the output node of the first bias voltage generation unit, first bias current through the output node output to
Form first bias voltage；
The drain electrode of the second transistor is shorted the input node as the first bias voltage generation unit with its grid, with
It is electrically connected the PTAT current generation unit, source electrode accesses the supply voltage.
6. constant current generative circuit structure as described in claim 1, which is characterized in that the second bias voltage generation unit packet
Include third transistor and the 7th transistor；
The third transistor, for receiving the first bias current generation second bias voltage and exporting to described
PTAT current generation unit；
7th transistor, for the load as the third transistor, with obtain first bias voltage with it is described
The difference of second bias voltage.
7. constant current generative circuit structure as claimed in claim 6, which is characterized in that the third transistor is three pole of positive-negative-positive
Pipe, the 7th transistor use NMOS transistor；
The base stage of the third transistor and its collector are shorted, and be respectively electrically connected to the 7th transistor drain electrode and
The PTAT current generation unit, emitter are electrically connected to the output node of the first bias voltage generation unit；
The grid of 7th transistor and its short circuit that drains, source electrode ground connection.
8. constant current generative circuit structure as claimed in claim 5, which is characterized in that the second bias voltage generation unit packet
Third transistor, the 7th transistor and the 9th transistor are included, the third transistor is PNP type triode, and the described 9th is brilliant
Body pipe uses NMOS transistor using PMOS transistor, the 7th transistor；
The grid of 9th transistor is electrically connected the grid of the first transistor, and source electrode accesses the supply voltage,
Drain electrode is electrically connected the emitter of the third transistor, for obtaining first bias current；
The base stage of the third transistor and its collector are shorted, and be respectively electrically connected to the 7th transistor drain electrode and
The PTAT current generation unit, for receiving the first bias current generation second bias voltage and exporting to described
PTAT current generation unit；
The grid of 7th transistor and its short circuit that drains, source electrode ground connection, for obtaining first bias voltage and institute
State the difference of the second bias voltage.
9. constant current generative circuit structure as claimed in claim 7 or 8, which is characterized in that the constant current generation unit includes the
Eight transistors and second resistance, the 8th transistor and the 7th transistor are homotype device；
The grid of 8th transistor is electrically connected to the output node of the first bias voltage generation unit, drain electrode access
Output voltage source, source electrode are grounded by the second resistance, while being electrically connected the PTAT current generation unit to receive
State image current；
8th transistor receives first bias voltage to be connected, and obtain on the 7th transistor described first
The difference is loaded by its source electrode and is formed in the second resistance by the difference of bias voltage and second bias voltage
Second bias current, and by adjusting the ratio of the PTAT current and second bias current, to the image current with
And second bias current is summed, and temperature independent constant current and output are generated.
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| CN201920524442.4U CN209433274U (en) | 2019-04-17 | 2019-04-17 | A kind of constant current generative circuit structure of automatic biasing |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109917843A (en) * | 2019-04-17 | 2019-06-21 | 南京芯耐特半导体有限公司 | A kind of the constant current generative circuit structure and constant current generation method of automatic biasing |
| CN112162584A (en) * | 2020-08-31 | 2021-01-01 | 江苏东海半导体科技有限公司 | Current bias circuit with adjustable and compensable current value |
| CN114077277A (en) * | 2020-08-19 | 2022-02-22 | 圣邦微电子（北京）股份有限公司 | Voltage stabilizing circuit |
| CN118092568A (en) * | 2024-03-05 | 2024-05-28 | 杭州芯迈半导体技术有限公司 | Bias circuit and bias voltage control method thereof |
-
2019
- 2019-04-17 CN CN201920524442.4U patent/CN209433274U/en not_active Withdrawn - After Issue
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109917843A (en) * | 2019-04-17 | 2019-06-21 | 南京芯耐特半导体有限公司 | A kind of the constant current generative circuit structure and constant current generation method of automatic biasing |
| CN109917843B (en) * | 2019-04-17 | 2023-09-12 | 南京芯耐特半导体有限公司 | Self-biased constant current generation circuit structure and constant current generation method |
| CN114077277A (en) * | 2020-08-19 | 2022-02-22 | 圣邦微电子（北京）股份有限公司 | Voltage stabilizing circuit |
| CN114077277B (en) * | 2020-08-19 | 2023-09-05 | 圣邦微电子（北京）股份有限公司 | Voltage stabilizing circuit |
| CN112162584A (en) * | 2020-08-31 | 2021-01-01 | 江苏东海半导体科技有限公司 | Current bias circuit with adjustable and compensable current value |
| CN112162584B (en) * | 2020-08-31 | 2022-05-20 | 江苏东海半导体科技有限公司 | Current bias circuit with adjustable and compensable current value |
| CN118092568A (en) * | 2024-03-05 | 2024-05-28 | 杭州芯迈半导体技术有限公司 | Bias circuit and bias voltage control method thereof |
| CN118092568B (en) * | 2024-03-05 | 2024-08-13 | 杭州芯迈半导体技术有限公司 | Bias circuit and bias voltage control method thereof |
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