CN102622031A - Low-voltage and high-precision band-gap reference voltage source - Google Patents
Low-voltage and high-precision band-gap reference voltage source Download PDFInfo
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Abstract
The invention relates to the technical field of BJT (bipolar junction transistor) and CMOS (complementary metal-oxide-semiconductor transistor) circuits, and particularly relates to a low-voltage and high-precision band-gap reference voltage source. The voltage source comprises a first current generating circuit, a second current generating circuit, a third current generating circuit and a current superimposition circuit, wherein the first current generating circuit is used for generating a channel of currents which are directly proportional to temperature variation; the second current generating circuit is used for generating a channel of currents with negative first-order temperature coefficients and positive second-order temperature coefficients; the third current generating circuit is used for generating a channel of currents with negative first-order temperature coefficients and negative second-order temperature coefficients; and the current superimposition circuit is used for superimposing the three channels of generated currents, and the superimposed currents provide reference voltages required for outputting through a resistor. According to the invention, the precision of the band-gap reference voltage source is improved, and the output reference voltage can be adjusted according to actual needs, so that a whole band-gap reference voltage circuit can work normally at a lower power supply voltage.
Description
Technical field
The present invention relates to BJT and CMOS transistor circuit technical field, particularly a kind of low-voltage high-precision bandgap voltage reference.
Background technology
There is a kind of traditional bandgap voltage reference circuit as shown in Figure 1 in the prior art, comprises triode transistor Q1 and Q2, error amplifier OP, feedback resistance R1 and R2, adjustment resistance R 3; The emitter analogue ground AVSS of transistor Q1 and Q2, two input ends of amplifier are connected node A and B respectively, and output terminal connects V
OUT, connect resistance R 1 and R2 simultaneously.The principle of work of band-gap reference circuit shown in Figure 1 is following:
Amplifier OP works in degree of depth negative feedback, and two input ends are distinguished connected node A and B, and two point voltages are equated, amplifier OP output terminal connects V
OUT, connect two resistance R 1 and R2 that resistance is identical simultaneously, the two-way electric current that flows through Q1 and Q2 is equated, thereby obtain:
V
BE1-V
BE2＝I
2R
3＝V
TInN(1)；
If the voltage of node A and B is not exclusively equal, after error amplifier OP compares the voltage of node A and Node B, with obtaining Δ Vmax after its difference DELTA V amplification; Δ Vmax makes the electric current that flows through transistor Q1 and Q2 that change in various degree take place; The pressure drop of resistance R 3 also changes thereupon, thereby, make the voltage approximately equal of node A and Node B; And then, make output voltage V
OUTMagnitude of voltage be tending towards constant and be:
The single order temperature coefficient that formula is (2) first is-1.5mV/ ℃, and second V
THaving positive temperature coefficient (PTC) is 0.086mV/ ℃, suitably chooses the ratio of N and resistance R 2 and R3, can obtain the output voltage V REF of zero-temperature coefficient.
There are following two problems in circuit shown in Figure 1, at first, and common V
REFFor about 1.25V, can not be applied in the low-voltage circuit; Secondly, this method does not compensate V
BEThe second-order temperature coefficient, its temperature coefficient is limited in tens ppm/ ℃ usually.
Also there is a kind of band-gap circuit as shown in Figure 2 in prior art, M1 in this band-gap circuit, and M2 and M3 form current mirror, and amplifier OP1 is in degree of depth negative feedback state, and AB two point voltages are equated, is V
BE, the electric current that promptly flows through R2 is V
BE/ R2 has negative temperature coefficient, and through the electric current of resistance R 1 is and V
TThe electric current of relation in direct ratio, two-way electric current sum flows through M2, is copied to I3, and then resistance R 3 voltage are:
Suitably choose N, R1, R2 and R3 can obtain the output voltage V of zero-temperature coefficient
REF, and the temperature coefficient of output voltage is independent mutually with R3, and promptly the bandgap voltage reference of output can be regulated.
But circuit as shown in Figure 2 has only the single order tc compensation, does not have the second order compensation, so temperature coefficient is generally 10-20ppm/ ℃.
Summary of the invention
The object of the present invention is to provide a kind of low-voltage high-precision bandgap voltage reference, effectively improved the precision of bandgap voltage reference, and output reference voltage can be adjusted according to actual needs.
The technical scheme that the present invention solves the problems of the technologies described above is following:
A kind of low-voltage high-precision bandgap voltage reference comprises first current generating circuit, second current generating circuit, the 3rd current generating circuit and electric current supercircuit;
Said first current generating circuit is used to produce one the tunnel and is the electric current of particular kind of relationship with temperature variation, and the relation of electric current and temperature is in said first current generating circuit: with the proportional example relation of temperature variation;
Said second current generating circuit is used to produce one the tunnel and is the electric current of particular kind of relationship with temperature variation, and the relation of electric current and temperature is in said second current generating circuit: the single order temperature coefficient is for negative, and the second-order temperature coefficient is for just;
Said the 3rd current generating circuit is used to produce one the tunnel and is the electric current of particular kind of relationship with temperature variation, and the relation of electric current and temperature is in said the 3rd current generating circuit: the single order temperature coefficient is for negative, and the second-order temperature coefficient is for negative;
Said electric current supercircuit, three road electric currents that are used for said first current generating circuit, said second current generating circuit and said the 3rd current generating circuit are produced superpose, and the electric current after the stack provides output required reference voltage through regulating resistance;
Said electric current supercircuit; Utilize the characteristic of the current temperature coefficient of said three road current generating circuits generation; Through regulating the ratio of three road electric currents, making the single order of superimposed current and second-order temperature coefficient is zero, and producing single order and second-order temperature coefficient is zero reference voltage.
In the such scheme, said first current generating circuit comprises triode Q1 and triode Q2, resistance R 1, current mirror pipe M2 and M3, amplifier OP1; The emitter of triode Q1 is connected with the collector of current mirror pipe M2 through resistance R 1, and the emitter of triode Q2 is connected with the collector of current mirror pipe M3, and current mirror pipe M2 is connected supply voltage V respectively with the emitter of current mirror pipe M3
DD, the collector of triode Q1 and triode Q2 is ground connection respectively; Two input ends of amplifier OP1 connect node A and the Node B between triode Q2 and the current mirror pipe M3 between resistance R 1 and the current mirror pipe M2 respectively; The output terminal of amplifier OP1 is connected with the grid of current mirror pipe M3 with current mirror pipe M2 respectively; The gate voltage of Control current mirror pipe M2 and current mirror pipe M3 forms feedback control loop.
In the such scheme, said second current generating circuit comprises current mirror pipe M1, load pipe M11, resistance R 2, amplifier OP21, feedback pipe M9, current mirror pipe M5; The source electrode of current mirror pipe M1 connects VDD; The grid of current mirror pipe M1 connects the grid of current mirror pipe M2 and current mirror pipe M3; The drain electrode of current mirror pipe M1 connects the positive input terminal of amplifier OP21 and the drain and gate of load pipe M11, and load pipe M11 is the diode connected mode, an end common ground of the source electrode of load pipe M11 and resistance R 2; The source electrode of resistance R 2 another termination feedback pipe M9 and the negative input end of amplifier OP21; The grid of the output termination feedback pipe M9 of amplifier OP21, feedback pipe M9 drain electrode connects grid and the drain electrode of current mirror pipe M5, and the source electrode of current mirror pipe M5 meets VDD; And be the diode connected mode, amplifier OP21 and feedback pipe M9, resistance R 2 and load pipe M11 constitute feedback control loop.
In the such scheme, said the 3rd current generating circuit comprises triode Q2, resistance R 3, amplifier OP22, feedback pipe M10, current mirror pipe M7; The emitter of the positive input termination triode Q2 of amplifier OP22; The negative input end of amplifier OP22 connects the source electrode of feedback pipe M10 and an end of resistance R 3, the other end ground connection of resistance R 3, the grid of the output termination feedback pipe M10 of amplifier OP22; The drain electrode of feedback pipe M10 connects the drain and gate of current mirror pipe M7; Current mirror pipe M7 source electrode meets VDD, and is the diode connected mode, and amplifier OP22 and feedback pipe M10, resistance R 3 and triode Q2 constitute feedback control loop.
In the such scheme, said electric current supercircuit comprises resistance R 4, current mirror pipe M4, current mirror pipe M6 and current mirror pipe M8; The source electrode of current mirror pipe M4, current mirror pipe M6 and current mirror pipe M8 meets VDD, the end of drain electrode connecting resistance R4, and grid connects the grid of current mirror pipe M3, current mirror pipe M5 and current mirror pipe M7 respectively, resistance R 4 other end ground connection.
In the such scheme, said current mirror pipe M1, current mirror pipe M2, current mirror pipe M3 has identical breadth length ratio with current mirror pipe M4, and is the current mirror connection.
In the such scheme, said load pipe M5 has identical breadth length ratio with current mirror pipe M6, and is the current mirror connection.
In the such scheme, said load pipe M7 has identical breadth length ratio with current mirror pipe M8, and is the current mirror connection.
Compared with prior art, the invention has the beneficial effects as follows:
Bandgap voltage reference circuit provided by the invention is owing to adopt the mode of the different electric current stack of three tunnel temperature characterisitics; The single order and the second-order temperature coefficient of stack electric current are afterwards gone to zero; Therefore make the temperature coefficient of temperature coefficient output voltage in the prior art of the reference voltage of output, effectively improved the precision of bandgap voltage reference; And; The structure that band-gap reference circuit provided by the invention adopts can be adjusted output reference voltage according to actual needs, and since amplifier can operate as normal in low-voltage circuit; Therefore, whole band gap reference voltage circuit can be under lower supply voltage operate as normal.
Description of drawings
Fig. 1 is the circuit diagram of a kind of bandgap voltage reference of the prior art;
Fig. 2 is the circuit diagram of another kind of bandgap voltage reference of the prior art;
The circuit diagram of the bandgap voltage reference that Fig. 3 provides for the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
As shown in Figure 3, the embodiment of the invention provides a kind of low-voltage high-precision bandgap voltage reference, comprises first current generating circuit, second current generating circuit, the 3rd current generating circuit and electric current supercircuit;
First current generating circuit is used to produce one the tunnel and is the electric current of particular kind of relationship with temperature variation, and the relation of this electric current and temperature is: with the proportional example relation of temperature variation;
Second current generating circuit is used to produce one the tunnel and is the electric current of particular kind of relationship with temperature variation, and the relation of this electric current and temperature is: the single order temperature coefficient is for negative, and the second-order temperature coefficient is for just;
The 3rd current generating circuit is used to produce one the tunnel and is the electric current of particular kind of relationship with temperature variation, and the relation of this electric current and temperature is: the single order temperature coefficient is for negative, and the second-order temperature coefficient is for negative;
The electric current supercircuit, three road electric currents that are used for above-mentioned three road current generating circuits are produced superpose, and superimposed current provides output required reference voltage through regulating resistance;
In above-mentioned four partial circuits; The electric current supercircuit utilizes the characteristic of the current temperature coefficient of three road current generating circuits generation; Through regulating the ratio of three road electric currents, making the single order of superimposed current and second-order temperature coefficient is zero, and producing single order and second-order temperature coefficient is zero reference voltage.
Wherein, first current generating circuit comprises triode Q1 and triode Q2, resistance R 1, current mirror pipe M2 and M3, amplifier OP1; The emitter of triode Q1 is connected with the collector of current mirror pipe M2 through resistance R 1, and the emitter of triode Q2 is connected with the collector of current mirror pipe M3, and current mirror pipe M2 is connected supply voltage V respectively with the emitter of current mirror pipe M3
DD, the collector of triode Q1 and triode Q2 is ground connection respectively; Two input ends of amplifier OP1 connect node A and the Node B between triode Q2 and the current mirror pipe M3 between resistance R 1 and the current mirror pipe M2 respectively; The output terminal of amplifier OP1 is connected with the grid of current mirror pipe M3 with current mirror pipe M2 respectively; The gate voltage of Control current mirror pipe M2 and current mirror pipe M3 forms feedback control loop.
Second current generating circuit comprises current mirror pipe M1, load pipe M11, resistance R 2, amplifier OP21, feedback pipe M9, load pipe M5; The source electrode of current mirror pipe M1 connects VDD, and grid connects the grid of current mirror pipe M2 and M3, and drain electrode connects the positive input terminal of amplifier OP21 and the drain and gate of load pipe M11; Load pipe M11 is the diode connected mode; One end ground connection of the source electrode of load pipe M11 and resistance R 2, source electrode and the amplifier OP21 negative input end of resistance R 2 another termination feedback pipe M9, the grid of the output termination feedback pipe M9 of amplifier OP21; Feedback pipe M9 drain electrode connects grid and the drain electrode of current mirror pipe M5; Current mirror pipe M5 source electrode meets VDD, is the diode connected mode, and amplifier OP21 and feedback pipe M9, resistance R 2 and load pipe M11 constitute feedback control loop.
The 3rd current generating circuit comprises triode Q2, resistance R 3, amplifier OP22, feedback pipe M10, load pipe M7; The emitter of the positive input termination triode Q2 of amplifier OP22; Negative input end connects the source electrode of M10 and an end of resistance R 3, the other end ground connection of resistance R 3, the grid of amplifier OP22 output termination feedback pipe M10; The drain electrode of feedback pipe M10 connects the drain and gate of current mirror pipe M7; Current mirror pipe M7 source electrode meets VDD, and is the diode connected mode, and amplifier OP22 and feedback pipe M10, resistance R 3 and triode Q2 constitute feedback control loop.
The electric current supercircuit comprises resistance R 4, current mirror pipe M4, current mirror pipe M6 and current mirror pipe M8; Current mirror pipe M4, the source electrode of M6 and M8 meets VDD, the end of drain electrode connecting resistance R4, grid meets current mirror pipe M3 respectively, the grid of M5 and M7, the other end ground connection of resistance R 4.
In the present embodiment, current mirror pipe M1, current mirror pipe M2, current mirror pipe M3 has identical breadth length ratio with current mirror pipe M4, and is the current mirror connection; Load pipe M5 has identical breadth length ratio with current mirror pipe M6, and is the current mirror connection; Load pipe M7 has identical breadth length ratio with current mirror pipe M8, and is the current mirror connection.
The principle of work of the bandgap voltage reference that the embodiment of the invention provides is:
Two input ends of amplifier OP1 in first current generating circuit are connected node A and Node B respectively; The output terminal Control current mirror pipe M1 of amplifier OP1, M2, M3; The gate voltage of the current mirror that M4 constitutes; Form feedback control loop, amplifier OP1 is operated in degree of depth negative feedback makes the voltage of A, B equate at 2, promptly
V
A＝V
B(4)；
Because current mirror pipe M1, M2, M3 has identical breadth length ratio with M4, and they are current mirror connections, therefore
V
BE1With, V
BE2Be triode Q
1With, Q
2Base-emitter voltage, N is Q
1And Q
2The ratio of area.
I
2Be proportional to V
T, i.e. I
2It is the electric current that is directly proportional with absolute temperature;
Amplifier OP21 in second current generating circuit makes that with the feedback control loop that feedback pipe M9, resistance R 2 and load pipe M11 constitute the voltage at resistance R 2 two ends is V
GS, therefore, flow through the electric current I of load pipe M5 and feedback pipe M9
5For
Suppose that load pipe M11 is operated in the strong inversion district, the square law relation by the MOS device obtains
Wherein Un is the middle carrier mobility of NMOS, and Cox is the oxide layer electric capacity between grid and the raceway groove, and W/L is the breadth length ratio of metal-oxide-semiconductor.
Owing to receive the influence of ionized impurity scattering and acoustics scattering of wave, mobility Un and temperature have the relation of complicacy, in the strong inversion district, when temperature when 300K is above, interior effective mobility and the temperature of inversion layer has T
-2Power exponent relation, threshold voltage V
TAlso complicated relation is arranged with temperature; Their common influences make V
GSSingle order temperature coefficient in one section temperature range is negative, and the second-order temperature coefficient is for just; Might as well establish
V
GS＝β
0+β
1T+β
2T
2(8)，
β wherein
0＞0, β
2＞0, β
1＜0.
When supposing the temperature coefficient of negligible resistance R2, I
5Have negative single order temperature coefficient and positive second-order temperature coefficient.Load pipe M5 constitutes current mirror and has identical breadth length ratio with current mirror pipe M6, therefore
I
6＝I
5(9)；
Amplifier OP22 in the 3rd current generating circuit makes that with the feedback control loop that feedback pipe M10, resistance R 3 and triode Q2 constitute the voltage at resistance R 3 two ends is V
BE2, therefore flow through the electric current I that feedback is managed M10, resistance R 3 and load pipe M7
7For
V
BE2Having single order temperature coefficient and second-order temperature coefficient all is negative value, might as well establish
V
BE2＝α
0+α
1T+α
2T
2(11)，
Wherein, α
0＞0, α
1＜0, α
2＜0, when supposing the temperature coefficient of negligible resistance, I
7Have negative single order temperature coefficient and negative second-order temperature coefficient.Load pipe M7 constitutes current mirror and has identical breadth length ratio with current mirror pipe M8, therefore
I
8＝I
7(12)；
The electric current supercircuit comprises resistance R 4, current mirror pipe M4, and M6 and M8,3 amplifiers form 3 feedback control loops, produce 3 tunnel electric current I
4, I
6And I
8Flow through resistance R 4, the output voltage V that obtains
REFFor
With formula (8), (11) substitution (13), so obtain
Suitably regulate the N in the formula (14), the value of R4/R2 and R4/R3 makes the coefficient of first order of temperature and second order coefficient be zero, can produce the zero-temperature coefficient reference voltage of second order compensation.
Bandgap voltage reference circuit provided by the invention is compared with bandgap voltage reference circuit shown in Figure 1; Owing to adopt the mode of the different electric current stack of three tunnel temperature characterisitics; The single order and the second-order temperature coefficient of stack electric current are afterwards gone to zero; Therefore the temperature coefficient of reference voltage that makes output has effectively improved the precision of bandgap voltage reference much smaller than the temperature coefficient of the output voltage of circuit shown in Figure 1; And; The structure that band-gap reference circuit provided by the invention adopts can be adjusted output reference voltage according to actual needs, and since amplifier can operate as normal in low-voltage circuit; Therefore, whole band gap reference voltage circuit can be under lower supply voltage operate as normal.
The above is merely the preferred embodiments of the present invention, is not limited to the present invention, and for a person skilled in the art, the present invention can have various changes and variation.All within spirit of the present invention and principle, any modification of being done, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. a low-voltage high-precision bandgap voltage reference is characterized in that: comprise first current generating circuit, second current generating circuit, the 3rd current generating circuit and electric current supercircuit;
Said first current generating circuit, be used to produce one the tunnel with the electric current of the proportional example relation of temperature variation;
Said second current generating circuit is used to produce one road single order temperature coefficient for negative, and the second-order temperature coefficient is positive electric current;
Said the 3rd current generating circuit is used to produce one road single order temperature coefficient for negative, and the second-order temperature coefficient is negative electric current;
Said electric current supercircuit, three road electric currents that are used for said first current generating circuit, said second current generating circuit and said the 3rd current generating circuit are produced superpose, and the electric current after the stack provides output required reference voltage through regulating resistance.
2. low-voltage high-precision bandgap voltage reference as claimed in claim 1 is characterized in that: said first current generating circuit comprises triode Q1 and triode Q2, resistance R 1, current mirror pipe M2 and M3, amplifier OP1; The emitter of triode Q1 is connected with the drain electrode of current mirror pipe M2 through resistance R 1, and the emitter of triode Q2 is connected with the leakage collector of current mirror pipe M3, and current mirror pipe M2 is connected supply voltage V respectively with the source electrode of current mirror pipe M3
DD, the collector of triode Q1 and triode Q2 is ground connection respectively; Two input ends of amplifier OP1 connect node A and the Node B between triode Q2 and the current mirror pipe M3 between resistance R 1 and the current mirror pipe M2 respectively; The output terminal of amplifier OP1 is connected with the grid of current mirror pipe M3 with current mirror pipe M2; The gate voltage of Control current mirror pipe M2 and current mirror pipe M3 forms feedback control loop.
3. low-voltage high-precision bandgap voltage reference as claimed in claim 2 is characterized in that: said second current generating circuit comprises current mirror pipe M1, load pipe M11, resistance R 2, amplifier OP21, feedback pipe M9, current mirror pipe M5; The source electrode of current mirror pipe M1 connects VDD; The grid of current mirror pipe M1 connects the grid of current mirror pipe M2 and current mirror pipe M3; The drain electrode of current mirror pipe M1 connects the positive input terminal of amplifier OP21 and the drain and gate of load pipe M11, and load pipe M11 is the diode connected mode, an end common ground of the source electrode of load pipe M11 and resistance R 2; The source electrode of resistance R 2 another termination feedback pipe M9 and the negative input end of amplifier OP21; The grid of the output termination feedback pipe M9 of amplifier OP21, feedback pipe M9 drain electrode connects grid and the drain electrode of current mirror pipe M5, and the source electrode of current mirror pipe M5 meets VDD; And be the diode connected mode, amplifier OP21 and feedback pipe M9, resistance R 2 and load pipe M11 constitute feedback control loop.
4. low-voltage high-precision bandgap voltage reference as claimed in claim 3 is characterized in that: said the 3rd current generating circuit comprises triode Q2, resistance R 3, amplifier OP22, feedback pipe M10, current mirror pipe M7; The emitter of the positive input termination triode Q2 of amplifier OP22; The negative input end of amplifier OP22 connects the source electrode of feedback pipe M10 and an end of resistance R 3, the other end ground connection of resistance R 3, the grid of the output termination feedback pipe M10 of amplifier OP22; The drain electrode of feedback pipe M10 connects the drain and gate of current mirror pipe M7; Current mirror pipe M7 source electrode meets VDD, and is the diode connected mode, and amplifier OP22 and feedback pipe M10, resistance R 3 and triode Q2 constitute feedback control loop.
5. low-voltage high-precision bandgap voltage reference as claimed in claim 4 is characterized in that: said electric current supercircuit comprises resistance R 4, current mirror pipe M4, current mirror pipe M6 and current mirror pipe M8; The source electrode of current mirror pipe M4, current mirror pipe M6 and current mirror pipe M8 meets VDD, the end of drain electrode connecting resistance R4, and grid connects the grid of current mirror pipe M3, current mirror pipe M5 and current mirror pipe M7 respectively, resistance R 4 other end ground connection.
6. low-voltage high-precision bandgap voltage reference as claimed in claim 5 is characterized in that: said current mirror pipe M1, and current mirror pipe M2, current mirror pipe M3 has identical breadth length ratio with current mirror pipe M4, and is the current mirror connection.
7. low-voltage high-precision bandgap voltage reference as claimed in claim 5 is characterized in that: said load pipe M5 has identical breadth length ratio with current mirror pipe M6, and is the current mirror connection.
8. low-voltage high-precision bandgap voltage reference as claimed in claim 5 is characterized in that: said load pipe M7 has identical breadth length ratio with current mirror pipe M8, and is the current mirror connection.
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| CN109725672B (en) * | 2018-09-05 | 2023-09-08 | 南京浣轩半导体有限公司 | Band gap reference circuit and high-order temperature compensation method |
| CN111984052A (en) * | 2020-07-28 | 2020-11-24 | 广东美的白色家电技术创新中心有限公司 | Voltage source |
| CN112684845A (en) * | 2020-12-22 | 2021-04-20 | 重庆百瑞互联电子技术有限公司 | Three-junction band gap circuit with zero Kelvin reference voltage |
| CN112684845B (en) * | 2020-12-22 | 2022-06-03 | 重庆百瑞互联电子技术有限公司 | Three-junction band gap circuit with zero Kelvin reference voltage |
| CN114237339A (en) * | 2021-12-01 | 2022-03-25 | 重庆吉芯科技有限公司 | Band-gap reference voltage circuit and compensation method of band-gap reference voltage |
| WO2023097857A1 (en) * | 2021-12-01 | 2023-06-08 | 重庆吉芯科技有限公司 | Bandgap reference voltage circuit and bandgap reference voltage compensation method |
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| CN116301178A (en) * | 2023-03-20 | 2023-06-23 | 龙芯中科(南京)技术有限公司 | Band gap reference circuit and chip |
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