CN103926966A - Low-voltage band-gap reference circuit - Google Patents
Low-voltage band-gap reference circuit Download PDFInfo
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- CN103926966A CN103926966A CN201410146385.2A CN201410146385A CN103926966A CN 103926966 A CN103926966 A CN 103926966A CN 201410146385 A CN201410146385 A CN 201410146385A CN 103926966 A CN103926966 A CN 103926966A
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- gap reference
- voltage
- reference circuit
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Abstract
The invention discloses a low-voltage band-gap reference circuit. The low-voltage band-gap reference circuit comprises a first portion and a second portion, wherein the first portion comprises a band-gap reference circuit body consisting of a first starting circuit and two symmetric amplifiers; the output ends of the amplifiers are fed back to an input end through a current mirror structure; required part of current is provided for the amplifiers; grids of two input tubes of the amplifiers are forcedly equal to each other by using the band-gap reference circuit body through BJT (bipolar junction transistors) of two PNP (precision navigation processors), so that a positive temperature coefficient voltage [PTAT (proportional to absolute temperature) voltage] is generated, a current source is provided for the circuit, and moreover, the grid of one of the amplifiers provides inputted PTAT bias voltage for the second portion via a divider resistor; the second portion comprises a band-gap reference circuit body consisting of a second starting circuit and six cascaded OVF (over frequency) circuits; the input end and the output end of each OVF circuit are connected together to form negative feedback; and the output end of the band-gap reference circuit body is connected with a unit gain buffer. The band-gap reference circuit can run in low voltage, and the stability of outputted voltage is high.
Description
Technical field
The present invention relates to a kind of band-gap reference circuit (BGR), relate in particular to a kind of band-gap reference circuit of low pressure.
Background technology
Reference source is the important component part of integrated circuit, and it is widely used in power management chip, temperature sensor, ADC, DAC, storer.Due to the band gap reference CMOS technique of compatibility standard completely, and precision is subject to technogenic influence little, it still can well work under low supply voltage, and the performance of all technical of bandgap reference voltage is good, as: temperature is floated coefficient, Power Supply Rejection Ratio, noise, line regulations etc. can meet request for utilization completely.Based on above advantage, band-gap reference circuit had been widely used in recent years, became a study hotspot.
Because the output of traditional band-gap reference is about 1.2V, so the supply voltage of this reference circuit must be more than 1.2V, this has just limited the application of band-gap reference under low pressure condition.Along with the development of integrated circuit technique, characteristic dimension is more and more less, and the integrated level of chip is more and more higher, and supply voltage is more and more lower, therefore, the research of the band-gap reference circuit that is operated in low pressure condition is had great importance.
In prior art, be published in " the CMOS band-gap reference circuit that sub-1 coucher is done " (" the A CMOS Bandgap Reference Circuit With Sub-1-V Operation ") of IEEE magazine solid-state circuit the 34th volume in May, 1999, this paper discloses the classical architecture of the bandgap voltage reference under a kind of utmost point low supply voltage, and the structure of this bandgap voltage reference as shown in Figure 1.What this circuit adopted is the reference source of electric current summation pattern, its core thinking is first to obtain two electric currents respectively with positive and negative temperature coefficient, to after two electric current summations, obtain the output of reference source by electric resistance partial pressure again, the output voltage of reference source can be realized by the ratio that regulates divider resistance.
At least there is following shortcoming in above-mentioned prior art:
Although this circuit is operated under low pressure condition, what use due to its is 2 grades of amplifiers, speed and difference on the frequency some, what its output adopted is Single-end output, compared with fully differential mode, its output voltage swing is less, common mode noise rejection ability is also weak.This band-gap reference can operating voltage scope neither be very large, circuit stability, capability of resistance to radiation are not high.
Summary of the invention
The object of this invention is to provide a kind of band-gap reference circuit that can realize high stability under low pressure condition.
The object of the invention is to be achieved through the following technical solutions:
The band-gap reference circuit of low pressure of the present invention, comprises Part I and Part II;
Described Part I comprises by the first start-up circuit and two band-gap references that symmetrical amplifier forms, the output of described amplifier feeds back to input end by current-mirror structure, for this amplifier provides required part electric current, this band-gap reference makes the grid of two input pipes of amplifier force to equate by the BJT of two PNP, thereby produce a positive temperature coefficient (PTC) voltage (PTAT voltage), for current source is provided in this circuit, the grid of one of them amplifier for providing, Part II is inputted to PTAT bias voltage through divider resistance simultaneously;
Described Part II comprises the band-gap reference being made up of the OVF circuit of the second start-up circuit and 6 cascades, and the input and output side of each OVF circuit is connected together, and forms negative feedback, and the output terminal of this band-gap reference is connected with unity gain buffer.
As seen from the above technical solution provided by the invention, the band-gap reference circuit of the low pressure that the embodiment of the present invention provides, owing to forming cascade band gap by 2 layers of band-gap reference structure of use, improve the stability of band-gap reference, reduce input offset voltage, thereby realize under low-voltage condition the band-gap reference circuit of high stability.Meanwhile, this band gap output, by a unity gain buffer, has improved the precision of output voltage.
Brief description of the drawings
Fig. 1 is the typical structure of bandgap voltage reference in prior art one;
The structural representation of the Part I of the band-gap reference circuit of the low pressure that Fig. 2 provides for the embodiment of the present invention;
The structural representation of the Part II of the band-gap reference circuit of the low pressure that Fig. 3 provides for the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
The band-gap reference circuit of low pressure of the present invention, its preferably embodiment be:
Comprise Part I and Part II;
Described Part I comprises by the first start-up circuit and two band-gap references that symmetrical amplifier forms, the output of described amplifier feeds back to input end by current-mirror structure, for this amplifier provides required part electric current, this band-gap reference makes the grid of two input pipes of amplifier force to equate by the BJT of two PNP, thereby produce a positive temperature coefficient (PTC) voltage (PTAT voltage), for current source is provided in this circuit, the grid of one of them amplifier (left side) for providing, Part II is inputted to PTAT bias voltage through divider resistance simultaneously;
Described Part II comprises the band-gap reference being made up of the OVF circuit of the second start-up circuit and 6 cascades, and the input and output side of each OVF circuit is connected together, and forms negative feedback, and the output terminal of this band-gap reference is connected with unity gain buffer.
Described amplifier is the folded common source and common grid amplifier of fully differential.
In described the first start-up circuit and the second start-up circuit, be connected with respectively NMOS pipe, the grid connected voltage of described NMOS pipe is high voltage.
The band-gap reference circuit of low pressure of the present invention, by using 2 layers of band-gap reference structure to form cascade band gap, improves the stability of band-gap reference, reduces input offset voltage, thereby realizes under low-voltage condition the band-gap reference circuit of high stability.Meanwhile, this band gap output, by a unity gain buffer, has improved the precision of output voltage.
Specific embodiment:
The band-gap reference circuit of low pressure mainly comprises two parts, and as shown in Figure 2, Part II as shown in Figure 3 for Part I.
Part I is mainly for the PMOS current source in this circuit provides reference voltage, provides bias voltage for Part II by divider resistance simultaneously.Part II is the operating voltage in order to reduce band gap.Two part cascades can improve the stability of this circuit.
Described Part I comprises start-up circuit and two band-gap references that symmetrical amplifier forms, this amplifier is the folded common source and common grid amplifier of a fully differential, output is by current-mirror structure (P10, P11 forms one group of current mirror, P15, P16 forms another group current mirror) feed back to input end, for this amplifier provides required part electric current, by the BJT(bipolar junction transistor of two PNP) make the grid of two input pipes of amplifier force to equate, thereby produce a positive temperature coefficient (PTC) (PTAP) voltage, through divider resistance (R6, R7) for Part II provides input PTAT bias voltage, the start-up circuit of this band-gap reference is simple, by P12, P13, N4 forms the start-up circuit of this part band gap.
Described Part II is by 6 OVF(offset voltage follower as shown in Figure 3 compensation followers) circuits cascading forms.The input/output terminal of each OVF circuit is connected together, and forms negative feedback.P18, P19, N5 form the start-up circuit of this part band gap.Meanwhile, output terminal has connected a unity gain buffer, and input end and the output terminal of this impact damper are shorted together.
In foregoing circuit, the grid connected voltage of N4, N5 is identical high voltage, and this high voltage makes the conducting of NMOS pipe, and output voltage is dragged down.
The beneficial effect of technical solution of the present invention:
(1) the present invention, by producing reference voltage by the structure of 2 layers of band-gap reference, realizes the high stability reference voltage in low pressure condition, and output, by a unity gain buffer, has improved the precision of output voltage.
(2) circuit structure symmetry of the present invention is better, is conducive to layout design, improves circuit stability and radiation resistance.
The above; only for preferably embodiment of the present invention, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claims.
Claims (3)
1. a band-gap reference circuit for low pressure, is characterized in that, comprises Part I and Part II;
Described Part I comprises by the first start-up circuit and two band-gap references that symmetrical amplifier forms, the output of described amplifier feeds back to input end by current-mirror structure, for this amplifier provides required part electric current, this band-gap reference makes the grid of two input pipes of amplifier force to equate by the BJT of two PNP, thereby produce a positive temperature coefficient (PTC) voltage, for current source is provided in this circuit, the grid of one of them amplifier for providing, Part II is inputted to PTAT bias voltage through divider resistance simultaneously;
Described Part II comprises the band-gap reference being made up of the OVF circuit of the second start-up circuit and 6 cascades, and the input and output side of each OVF circuit is connected together, and forms negative feedback, and the output terminal of this band-gap reference is connected with unity gain buffer.
2. the band-gap reference circuit of low pressure according to claim 1, is characterized in that, the folded common source and common grid amplifier that described amplifier is fully differential.
3. the band-gap reference circuit of low pressure according to claim 1 and 2, is characterized in that, is connected with respectively NMOS pipe in described the first start-up circuit and the second start-up circuit, and the grid connected voltage of described NMOS pipe is high voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201410146385.2A CN103926966B (en) | 2014-04-11 | 2014-04-11 | Low-voltage band-gap reference circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410146385.2A CN103926966B (en) | 2014-04-11 | 2014-04-11 | Low-voltage band-gap reference circuit |
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| CN103926966A true CN103926966A (en) | 2014-07-16 |
| CN103926966B CN103926966B (en) | 2015-07-08 |
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| CN201410146385.2A Expired - Fee Related CN103926966B (en) | 2014-04-11 | 2014-04-11 | Low-voltage band-gap reference circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106343971A (en) * | 2016-10-18 | 2017-01-25 | 天津工业大学 | Circuit system for measuring pulse and blood oxygen saturation degree |
| CN113110678A (en) * | 2021-04-21 | 2021-07-13 | 湖南融创微电子有限公司 | High-reliability starting circuit based on low power supply voltage bandgap and control method |
| CN116225142A (en) * | 2023-05-06 | 2023-06-06 | 上海灵动微电子股份有限公司 | Non-resistance band gap reference voltage source, reference voltage generating method and integrated circuit |
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| US20040232895A1 (en) * | 2003-05-20 | 2004-11-25 | Chi-Kun Chiu | Low noise fast stable voltage regulator circuit |
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| CN102591398A (en) * | 2012-03-09 | 2012-07-18 | 钜泉光电科技(上海)股份有限公司 | Multi-output bandgap reference circuit with function of nonlinear temperature compensation |
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2014
- 2014-04-11 CN CN201410146385.2A patent/CN103926966B/en not_active Expired - Fee Related
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| US20040232895A1 (en) * | 2003-05-20 | 2004-11-25 | Chi-Kun Chiu | Low noise fast stable voltage regulator circuit |
| CN101441489A (en) * | 2008-12-29 | 2009-05-27 | 苏州市华芯微电子有限公司 | Integrated circuit for implementing high PSRR and method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106343971A (en) * | 2016-10-18 | 2017-01-25 | 天津工业大学 | Circuit system for measuring pulse and blood oxygen saturation degree |
| CN113110678A (en) * | 2021-04-21 | 2021-07-13 | 湖南融创微电子有限公司 | High-reliability starting circuit based on low power supply voltage bandgap and control method |
| CN116225142A (en) * | 2023-05-06 | 2023-06-06 | 上海灵动微电子股份有限公司 | Non-resistance band gap reference voltage source, reference voltage generating method and integrated circuit |
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| Publication number | Publication date |
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| CN103926966B (en) | 2015-07-08 |
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Granted publication date: 20150708 Termination date: 20190411 |