CN202383552U - Improved bandgap reference voltage source - Google Patents
Improved bandgap reference voltage source Download PDFInfo
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- CN202383552U CN202383552U CN2011204036663U CN201120403666U CN202383552U CN 202383552 U CN202383552 U CN 202383552U CN 2011204036663 U CN2011204036663 U CN 2011204036663U CN 201120403666 U CN201120403666 U CN 201120403666U CN 202383552 U CN202383552 U CN 202383552U
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Abstract
The utility model provides an improved bandgap reference voltage source which is characterized in that two P-type field effect transistors as a current source of two branches of a bipolar device in the prior art are replaced with a P-type field effect transistor, and two current branches are formed by using two matching resistors, so that the accuracy mismatch between field effect transistor devices is effectively eliminated, and the influence of an offset voltage on the output of a reference voltage source is reduced. The improved bandgap reference voltage source comprises a bipolar first crystal triode Q1 and a bipolar second crystal triode Q2, wherein the emitting pole of the first crystal triode Q1, after being connected in series with a first resistor R21, is connected with the drain pole of a first P-type field effect transistor M1; the emitting pole of the second crystal triode Q2, after being connected in series with a second resistor R0 and a third resistor R22, is also connected with the drain pole of the first P-type field effect transistor M1; and the first P-type field effect transistor M1 and a second P-type field effect transistor M2 form a current mirror circuit, and the output voltage VBG of the reference voltage source is the voltages outputted from the two ends of a fourth resistor Rbg which is connected in series with the second P-type field effect transistor M2.
Description
Technical field
The utility model relates to the reference voltage source technical field, particularly relates to a kind of improved bandgap voltage reference.
Background technology
Reference voltage source typically refers to the voltage source of the high stability that in circuit, is used as voltage reference.Desirable reference voltage source should not receive power supply and Influence of Temperature, in circuit, stable voltage can be provided.Continuous increase along with the integrated circuit scale; It becomes on a large scale, indispensable basic circuit module in VLSI (very large scale integrated circuits) and the nearly all digital simulator system; In many integrated circuit and circuit unit, all need accurate and stable voltage reference, therefore; Reference voltage source occupies very consequence in Analogous Integrated Electronic Circuits, its precision and stable performance and the precision that directly affects whole electronic system.
General reference voltage source commonly used is a bandgap voltage reference; Usually adopt bipolar transistor to realize; But the base-emitter voltage of bipolar transistor has negative temperature characteristic; For offsetting the negative temperature characteristic of base-emitter voltage; Produce temperature independent voltage reference, just need have the voltage of positive temperature characterisitic, research shows; Two differences that are operated in the base-emitter voltage of the bipolar transistor under the different electric current density are directly proportional with temperature; The principle of work of bandgap voltage reference is exactly to utilize the parameter of bipolar transistor structure Positive and Negative Coefficient Temperature to carry out temperature compensation, and base-emitter voltage pressure reduction △ VBE with ptc characteristics and the base-emitter voltage VBE with negative temperature coefficient feature are offseted, and obtains approaching with the zero reference voltage of temperature coefficient.
As shown in Figure 1, list of references " A CMOS Bandgap Reference Circuit with Sub-1-V Operation ", H.Banba etc., IEEE JSSC, Vol.34, No.5, May 1999. provide a kind of common bandgap voltage reference.Comprise the diode D1 and the D2 that have same function with bipolar transistor; Wherein D1 is a diode, and D2 is a N diode, and D1 connects FET P1; D2 connects FET P2 through resistance R 3; P1 that grid connects altogether and P2 and P3 constitute current mirror circuit, and the negative input end of operational amplifier connects diode D1, and the positive input terminal of operational amplifier connects the resistance R 3 that is connected with diode D2; The output terminal of operational amplifier connects the grid of P1, P2, P3, and the output terminal of the resistance R 4 that is connected in series with P3 is a reference voltage output end.As can beappreciated from fig. 1; The electric current that flows through diode D1 and two branch roads of D2 is the current source that is used as two branch roads respectively with two FET P1 and P2; In other words, the currents match of D1 and two branch roads of D2 is decided by two p type field effect transistor P1 and P2 among Fig. 1, and actual conditions are; Process deviation between the device of FET P1 and P2 is difficult to avoid; Therefore certainly exist offset voltage, influence the currents match precision of Q1 and two branch roads of Q2, cause the bigger deviation of reference voltage of output.
The utility model content
The deficiency that the utility model exists to prior art; A kind of improved bandgap voltage reference is provided; With the current source of two P types of traditional use FET as two branch roads of bipolar device; The current source that replaces with two branch roads comes from a P type FET, forms two current branch through two build-out resistors then, has effectively eliminated the precision mismatch between the FET device; Reduced the influence of offset voltage, can obtain more high-precision reference voltage reference voltage source output.
The technical scheme of the utility model is:
A kind of improved bandgap voltage reference; Comprise two base stages and the collector ambipolar first transistor Q1 and the second transistor Q2 of short circuit respectively; Wherein the second transistor Q2 comprises N the first transistor Q1; It is characterized in that; The emitter of the said first transistor Q1 first resistance R 21 back of connecting is connected with the drain electrode of the first p type field effect transistor M1; The emitter of the said second transistor Q2 is connected and also is connected with the drain electrode of the first p type field effect transistor M1 after second resistance R 0 and the 3rd resistance R 22; The said first p type field effect transistor M1 and the second p type field effect transistor M2 constitute current mirror circuit, and the emitter of the first transistor Q1 also is connected with the negative input end of operational amplifier A, and the positive input terminal of operational amplifier A is connected between second resistance R 0 and the 3rd resistance R 22; The grid of the output terminal of operational amplifier A and the first p type field effect transistor M1 and the second p type field effect transistor M2 connects altogether, and the output voltage V BG of reference voltage source is the output voltage at the 4th resistance R bg two ends that are connected in series with the second p type field effect transistor M2.
The resistance of said first resistance R 21 and the 3rd resistance R 22 equates.
Collector and emitter two ends parallel connection the 5th resistance R 11 of the said first transistor Q1; Parallelly connected the 6th resistance R 12 between the other end of said second resistance R 0 of connecting and the collector of the second transistor Q2 with the emitter of the second transistor Q2.
The resistance of said the 6th resistance R 12 and the 5th resistance R 11 equates.
The mutual conductance gm of the said first p type field effect transistor M1 and the second p type field effect transistor M2 equates.
The technique effect of the utility model:
A kind of improved bandgap voltage reference that the utility model provides; Prior art than list of references; It is advantageous that with the current source of two p type field effect transistors of traditional use as two branch roads of bipolar device, the current source that replaces with two branch roads comes from a p type field effect transistor; Form two current branch through two build-out resistors then; And therefore the matching precision of resistance will effectively eliminate the precision mismatch between the device far above the matching precision of field effect transistor, and owing to reduced the use number of field effect transistor; Farthest reduce the generation source of offset voltage, therefore can obtain more high-precision reference voltage.
Description of drawings
Fig. 1 is the structural representation of the reference voltage source shown in the list of references.
Fig. 2 is the structural representation of the improved reference voltage source of the utility model.
Embodiment
Embodiment to the utility model is described further below in conjunction with accompanying drawing.
As shown in Figure 2; A kind of improved bandgap voltage reference; Comprise two base stages and the collector ambipolar first transistor Q1 and the second transistor Q2 of short circuit respectively; Wherein the second transistor Q2 comprises N the first transistor Q1; The emitter of the first transistor Q1, first resistance R 21 back of connecting is connected with the drain electrode of the first p type field effect transistor M1; The emitter of the second transistor Q2 is connected and also is connected with the drain electrode of the first p type field effect transistor M1 after second resistance R 0 and the 3rd resistance R 22; The first p type field effect transistor M1 and the second p type field effect transistor M2 constitute current mirror circuit, and the emitter of the first transistor Q1 also is connected with the negative input end of operational amplifier A, and the positive input terminal of operational amplifier A is connected between second resistance R 0 and the 3rd resistance R 22; The grid of the output terminal of operational amplifier A and the first p type field effect transistor M1 and the second p type field effect transistor M2 connects altogether, and the output voltage V BG of reference voltage source is the output voltage at the 4th resistance R bg two ends that are connected in series with the second p type field effect transistor M2.Wherein the resistance of first resistance R 21 and the 3rd resistance R 22 equates; In addition, the collector and emitter two ends of first transistor Q1 parallel connections the 5th resistance R 11, parallelly connected the 6th resistance R 12 between the other end of second resistance R 0 of connecting and the collector of the second transistor Q2 with the emitter of the second transistor Q2; The resistance of the 6th resistance R 12 and the 5th resistance R 11 equates; The mutual conductance gm of the first p type field effect transistor M1 and the second p type field effect transistor M2 equates.
The principle of work of the utility model at first is described: node 1 and node 2 are under the effect by operational amplifier A, p type field effect transistor M1 and the closed circuit be made up of jointly resistance R 21, R22, R0, R11, R12 among Fig. 2; Under the situation of not considering process deviation and offset voltage; Their voltage equates; Be V1=V2, the size of current I_ZTAT that also is two branch roads in the resistor network is on all four in the ideal case.We investigate the temperature characterisitic of I_ZTAT through the electric current of analysis node 2 place branch roads now: at first; Two bipolar transistor Q1 are in the same place with the collector short circuit owing to base stage with Q2; In fact this time, they were exactly two common diodes; Just Q1 is a diode (m=1); Q2 is a N diode (m=N). secondly, I_ZTAT is actually electric current (the being designated as I_R0) sum of the electric current (being designated as I_R12) of the resistance R 12 of flowing through and the resistance R 0 of flowing through, i.e. I_ZTAT=I_R12+I_R0.Below we calculate this two electric currents respectively: the electric current I _ R12=V2/R12=V1/R12=Vbe1/R12 of the resistance R of flowing through 12, wherein Vbe1 is that the emitter-to-base voltage of Q1 is poor, V1=Vbe1; The electric current of the resistance R of flowing through 0: I_R0=(V2-Vbe2)/R0=(V1-Vbe2)/R0=(Vbe1-Vbe2)/R0=(kT/q) lnN/R0; Therefore, I_ZTAT=I_R12+I_R0=Vbe1/R12+ (kT/q) lnN/R0.Notice that the temperature coefficient of Vbe1 bears, and the temperature coefficient of thermal voltage kT/Q is positive, as long as therefore adjustment R0, the proper proportion of R12 and N just can realize the electric current I _ ZTAT of zero-temperature coefficient.This zero-temperature coefficient electrical current forms voltage through the mirror image effect of p type field effect transistor M2 on resistance R bg, can obtain the reference voltage V BG of zero-temperature coefficient.
The advantage of Fig. 2 of the utility model once than Fig. 1 of list of references is described in addition again: as previously mentioned, by operational amplifier A, p type field effect transistor M1 and by R21; R22, R0, R11; Under the effect of the common closed circuit of forming of R12 constant resistance network, ignoring under the situation of offset voltage, the voltage of node 1 and node 2 is duplicate (the hypothesis loop gain is enough big); But under actual conditions, because the process deviation between the device always is difficult to avoid, so offset voltage always exists; Voltage with regard to causing node 1 and node 2 has error, and this error can be delivered to output terminal VBG and cause bigger deviation.And the precision mismatch between the device is the basic physics source of causing this deviation.Therefore choosing which type of device, for example is transistor or resistance or the like, and the imbalance size of VBG is had direct decisive influence.The advantage of the utility model just is to cause offset voltage to produce the device in source through replacement, comes farthest to reduce this deviation, thereby realizes high-precision voltage reference.As previously mentioned; The node 1 and the branch current size at node 2 places are consistent; Key just is that the utility model has adopted the current source of realizing these two branch roads with the list of references diverse ways: in Fig. 1; Be to have used two p type field effect transistor P1 and P2 to be used as the current source of two branch roads, and at Fig. 2 of the utility model, the current source of two branch roads come from same p type field effect transistor; Then through forming two current branch after two build-out resistor R22 and the R21 respectively; Therefore, the matching precision of two branch roads is that matching precision by two p type field effect transistor P1 and P2 decides among Fig. 1, then is that the matching precision by two resistance R 21 and R22 decides among Fig. 2.As everyone knows, the matching precision of resistance will be far above field effect transistor, and, also reduce field effect transistor and used number, in other words, therefore the source of the offset voltage among Fig. 2 will finally can obtain more high-precision reference voltage far below Fig. 1.
Claims (5)
1. improved bandgap voltage reference; Comprise two base stages and the collector ambipolar first transistor Q1 and the second transistor Q2 of short circuit respectively; Wherein the second transistor Q2 comprises N the first transistor Q1; It is characterized in that; The emitter of the said first transistor Q1 first resistance R 21 back of connecting is connected with the drain electrode of the first p type field effect transistor M1; The emitter of the said second transistor Q2 is connected and also is connected with the drain electrode of the first p type field effect transistor M1 after second resistance R 0 and the 3rd resistance R 22; The said first p type field effect transistor M1 and the second p type field effect transistor M2 constitute current mirror circuit, and the emitter of the first transistor Q1 also is connected with the negative input end of operational amplifier A, and the positive input terminal of operational amplifier A is connected between second resistance R 0 and the 3rd resistance R 22; The grid of the output terminal of operational amplifier A and the first p type field effect transistor M1 and the second p type field effect transistor M2 connects altogether, and the output voltage V BG of reference voltage source is the output voltage at the 4th resistance R bg two ends that are connected in series with the second p type field effect transistor M2.
2. improved bandgap voltage reference according to claim 1 is characterized in that, the resistance of said first resistance R 21 and the 3rd resistance R 22 equates.
3. improved bandgap voltage reference according to claim 1 is characterized in that, collector and emitter two ends parallel connection the 5th resistance R 11 of the said first transistor Q1; Parallelly connected the 6th resistance R 12 between the other end of said second resistance R 0 of connecting and the collector of the second transistor Q2 with the emitter of the second transistor Q2.
4. improved bandgap voltage reference according to claim 3 is characterized in that, the resistance of said the 6th resistance R 12 and the 5th resistance R 11 equates.
5. improved bandgap voltage reference according to claim 1 is characterized in that, the mutual conductance gm of the said first p type field effect transistor M1 and the second p type field effect transistor M2 equates.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011204036663U CN202383552U (en) | 2011-10-21 | 2011-10-21 | Improved bandgap reference voltage source |
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| CN2011204036663U CN202383552U (en) | 2011-10-21 | 2011-10-21 | Improved bandgap reference voltage source |
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| CN202383552U true CN202383552U (en) | 2012-08-15 |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103645769A (en) * | 2013-12-10 | 2014-03-19 | 电子科技大学 | low-voltage band-gap reference source circuit |
| CN103677056A (en) * | 2013-06-20 | 2014-03-26 | 国家电网公司 | Method and circuit for providing zero-temperature coefficient voltage |
| CN105759895A (en) * | 2016-05-03 | 2016-07-13 | 成都振芯科技股份有限公司 | Current source circuit with negative temperature coefficient |
| CN106527571A (en) * | 2016-07-05 | 2017-03-22 | 络达科技股份有限公司 | Bias circuit |
| CN108133102A (en) * | 2017-12-21 | 2018-06-08 | 上海华力微电子有限公司 | A kind of modeling method of the overall situation technique angle model of MOSFET element |
| CN112558672A (en) * | 2020-12-24 | 2021-03-26 | 上海贝岭股份有限公司 | Reference current source and chip comprising same |
| US11815927B1 (en) | 2022-05-19 | 2023-11-14 | Changxin Memory Technologies, Inc. | Bandgap reference circuit and chip |
| WO2023221210A1 (en) * | 2022-05-19 | 2023-11-23 | 长鑫存储技术有限公司 | Bandgap reference circuit and chip |
-
2011
- 2011-10-21 CN CN2011204036663U patent/CN202383552U/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103677056A (en) * | 2013-06-20 | 2014-03-26 | 国家电网公司 | Method and circuit for providing zero-temperature coefficient voltage |
| CN103645769A (en) * | 2013-12-10 | 2014-03-19 | 电子科技大学 | low-voltage band-gap reference source circuit |
| CN105759895A (en) * | 2016-05-03 | 2016-07-13 | 成都振芯科技股份有限公司 | Current source circuit with negative temperature coefficient |
| CN106527571A (en) * | 2016-07-05 | 2017-03-22 | 络达科技股份有限公司 | Bias circuit |
| CN108133102A (en) * | 2017-12-21 | 2018-06-08 | 上海华力微电子有限公司 | A kind of modeling method of the overall situation technique angle model of MOSFET element |
| CN108133102B (en) * | 2017-12-21 | 2021-06-04 | 上海华力微电子有限公司 | Modeling method of global process angle model of MOSFET device |
| CN112558672A (en) * | 2020-12-24 | 2021-03-26 | 上海贝岭股份有限公司 | Reference current source and chip comprising same |
| US11815927B1 (en) | 2022-05-19 | 2023-11-14 | Changxin Memory Technologies, Inc. | Bandgap reference circuit and chip |
| WO2023221210A1 (en) * | 2022-05-19 | 2023-11-23 | 长鑫存储技术有限公司 | Bandgap reference circuit and chip |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG XIDIWEI ELECTRONIC CO., LTD. Free format text: FORMER OWNER: TANG YA Effective date: 20121129 Free format text: FORMER OWNER: HAO YUEGUO Effective date: 20121129 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 510663 GUANGZHOU, GUANGDONG PROVINCE TO: 528222 FOSHAN, GUANGDONG PROVINCE |
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| TR01 | Transfer of patent right |
Effective date of registration: 20121129 Address after: 528222, Nanhai District, Guangdong City, Nanhai District, Nanhai Town, Nanhai Software Technology Park (R & D building A) five floor, two, Foshan Patentee after: GUANGDONG HALO MICROELECTRONICS Co.,Ltd. Address before: 510663 Guangdong city of Guangzhou province Zhongshan five road No. 219 CTS commercial city 12 floor Patentee before: Tang Ya Patentee before: Hao Yueguo |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120815 Termination date: 20151021 |
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| EXPY | Termination of patent right or utility model |