CN108345336A - Energy-gap reference circuit - Google Patents
Energy-gap reference circuit Download PDFInfo
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- CN108345336A CN108345336A CN201710058122.XA CN201710058122A CN108345336A CN 108345336 A CN108345336 A CN 108345336A CN 201710058122 A CN201710058122 A CN 201710058122A CN 108345336 A CN108345336 A CN 108345336A
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- operational amplifier
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- bipolar transistor
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/561—Voltage to current converters
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- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
Energy-gap reference circuit, including one first operational amplifier, a second operational amplifier, one first current source, one second current source, a third current source, one first bipolar transistor, one second bipolar transistor, a feedback element and a bleeder circuit.The bleeder circuit is divided to the voltage difference between an input of the second operational amplifier and a base stage of second bipolar transistor to provide a reference voltage.
Description
Technical field
The present invention relates to a kind of energy-gap reference circuits.
Background technology
Energy-gap reference circuit is for generating accurate output voltage.Output voltage caused by energy-gap reference circuit will not be by
Technique, the influence for supplying power supply and temperature change.Therefore, energy-gap reference circuit can be widely used in various analog circuit sum numbers
In word circuit, these circuits need accurate reference voltage in running.
Fig. 1 illustrates a common energy-gap reference circuit 100.Referring to Fig.1, which includes PMOS crystal
Pipe M1, M2 and M3, an operational amplifier OP, resistance R1 and R2 and bipolar transistor (bipolar transistor) Q1,
Q2 and Q3.When ignoring base current, the output voltage VO UT of the energy-gap reference circuit 100 can be expressed as:
Wherein, emitter-base voltage that VEB3 is bipolar transistor Q3 is poor, thermal voltage when VT is room temperature
(thermal voltage), N are the ratio of the current density of bipolar transistor Q2 and the current density of bipolar transistor Q1
Example.
As shown in formula (1), after the resistance value ratio of adjustment resistance R2 and R1, which can provide
VOUT is stabilized the output voltage with zero-temperature coefficient.The voltage level of voltage VOUT is about 1.25V, close to silicon bandgap
The electron volts (electron volt) of (energy gap), also that is, silicon bandgap reference voltage.
However, in order to be widely used in different applications, energy-gap reference circuit may need to export different electricity
Voltage level.
Invention content
One of the objects of the present invention is to provide a kind of energy-gap reference circuits, to provide a reference current and one with reference to electricity
Pressure.
An embodiment according to the present invention, the energy-gap reference circuit include one first operational amplifier, and one second operation is put
Big device, one first current source, one second current source, a third current source, one first bipolar transistor, one second bipolarity are brilliant
Body pipe, a feedback element and a bleeder circuit.First operational amplifier has one first input, one second input and one the
One output.The second operational amplifier is inputted with a third, one the 4th input and one second output.First current source couples
Between a supply power supply node and first input of first operational amplifier.Second current source is coupled to supply electricity
Between source node and second input of first operational amplifier.The third current source is coupled to the supply power supply node and should
Between the third input of second operational amplifier.First bipolar transistor have a base stage, have be coupled to this first
One emitter of current source, and with the collector for being coupled to a ground nodes.Second bipolar transistor has coupling
To a base stage of the base stage of first bipolar transistor, there is an emitter, and with being coupled to the one of the ground nodes
Collector.The feedback element is coupled between the third current source and the base stage of second bipolar transistor, feedback member
Part is controlled by second output of the second operational amplifier.The bleeder circuit to the second operational amplifier this
Voltage difference between three inputs and the base stage of second bipolar transistor is divided to provide a reference voltage.This
4th input of two operational amplifiers is coupled to first input and first operational amplifier of first operational amplifier
This second input the two in one of.
Description of the drawings
Fig. 1 illustrates a common energy-gap reference circuit.
Fig. 2 shows the circuit diagram of the energy-gap reference circuit in conjunction with one embodiment of the invention.
Fig. 3 shows the circuit diagram of the energy-gap reference circuit in conjunction with another embodiment of the present invention.
Fig. 4 shows the circuit diagram of the energy-gap reference circuit in conjunction with further embodiment of this invention.
Fig. 5 shows the circuit diagram of the energy-gap reference circuit in conjunction with further embodiment of this invention.
【Symbol description】
100 energy-gap reference circuits
200 energy-gap reference circuits
22 current source cells
24 bleeder circuits
300 energy-gap reference circuits
400 energy-gap reference circuits
500 energy-gap reference circuits
M1, M2, M3, M4 PMOS transistor
M5 NMOS transistors
OP operational amplifiers
OP1, OP2 operational amplifier
Q1, Q2, Q3 bipolar transistor
R1, R2, R3, R4 resistance
Specific implementation mode
Fig. 2 shows the circuit diagram of the energy-gap reference circuit 200 in conjunction with one embodiment of the invention.As shown in Fig. 2, the energy gap is joined
It includes a current source cell 22 to examine circuit 200, an operational amplifier OP1, an operational amplifier OP2, a resistance R1, bipolar
Transistor Q1, bipolar transistor Q2, a feedback transistor M4, a bleeder circuit 24 and a resistance R4.
The current source cell 22 provides bias current I1, I2 and I3 of multiple stabilizations.In the present embodiment, the current source list
Member 22 is current mirror configuration configuration, and is made of three PMOS transistors M1, M2 and M3.With reference to Fig. 2, the PMOS transistor
M1 has the source electrode for being coupled to a supply-voltage source VDD, has a grid of the output end for being coupled to operational amplifier OP1
Pole, and the drain electrode with the inverting input for being coupled to operational amplifier OP1.PMOS transistor M2, which has, to be coupled to
A source electrode of supply-voltage source VDD has a grid of the output end for being coupled to operational amplifier OP1, and has coupling
It is connected to a non-inverting input of operational amplifier OP1 and is coupled to a non-inverting input of operational amplifier OP2
A drain electrode.PMOS transistor M3 has the source electrode for being coupled to supply-voltage source VDD, has and is coupled to the operation amplifier
One grid of the output end of device OP1, and the drain electrode with the inverting input for being coupled to operational amplifier OP2.
Bipolar transistor Q1 has to receive a base stage of a bias voltage VB, is coupled to the operational amplifier
One emitter of an inverting input of OP1, and it is coupled to a collector of a ground termination points.Bipolar transistor Q2 has
To receive a base stage of bias voltage VB and be coupled to a collector of the ground termination points.Resistance R1 is coupled to the operation
Between a non-inverting input and the emitter of bipolar transistor Q2 of amplifier OP1.
With reference to figure 2, feedback transistor M4 is a PMOS transistor, has and is coupled to being somebody's turn to do for operational amplifier OP2
One source electrode of inverting input, is coupled to a grid of an output end of operational amplifier OP2, and is coupled to bipolarity crystalline substance
The base stage of body pipe Q1 and be coupled to bipolar transistor Q2 the base stage a drain electrode.The bleeder circuit 24 and the feedback
Transistor M4 is connected in parallel.Resistance R4 is coupled between the bleeder circuit 24 and the ground termination points.
With reference to Fig. 2, operational amplifier OP1 and the current source cell 22 constitute a negative feedback loop so that input terminal electricity
Press VD1 and VD2 substantially the same.Therefore, voltage VD1 and VD2 are represented by:
VD1=VD2=VB+VEB1=VB+VEB2+I2 × R1 (2)
Wherein, emitter-base voltage that VEB1 is bipolar transistor Q1 is poor, and VEB2 is bipolar transistor Q2
Emitter-base voltage it is poor.
Accordingly, formula (2) can be rearranged as:
With reference to Fig. 2, operational amplifier OP2, the current source cell 22 and feedback transistor M4 constitute a negative-feedback and return
Road so that input terminal voltage VD2 and VD3 is substantially the same.It, should since the grid of such transistor M1, M2 and M3 are connected with each other
The source electrode of equal transistors M1, M2 and M3 are coupled to supply-voltage source VDD, and the drain voltage of such transistor M1, M2 and M3
It is substantially the same, therefore the current value for flowing through electric current I1, I2 and I3 of such PMOS transistor M1, M2 and M3 is proportional to transistor
Breadth length ratio.
In the present embodiment, the breadth length ratio of such PMOS transistor M1, M2 and M3 are set as 1:1:M, wherein m are just whole
Number.Therefore, the current value of electric current I1 and electric current I2 are substantially the same, and the current value of electric current I3 is m times of electric current I1.
For simplicity, the bleeder circuit 24 in Fig. 2 is composed in series by two resistance R2 and R3, however, of the invention
It should not be as limit.In the present embodiment, which divides
To provide a reference voltage VREF in the crossover point of resistance R2 and resistance R3.Therefore, formula (3) can be rearranged as formula
(4):
Since emitter-base voltage difference of bipolar transistor Q1 has negative temperature coefficient and voltage difference △
VBE has positive temperature coefficient, therefore the temperature coefficient of the voltage value of reference voltage VREF can be adjusted to positive value, negative value or essence
It is upper to be equal to zero.For example, the positive temperature coefficient of reference voltage VREF can be by the numerical value for increasing m or by increase resistance R4
The ratio of resistance R1 is obtained；The negative temperature coefficient of reference voltage VREF can be by increasing resistance R3 in the bleeder circuit 24
Resistance value obtains.
Make such voltage VD1, VD2 and VD3 by negative feedback loop with reference to Fig. 2, such operational amplifier OP1 and OP2
It is substantially the same.In other embodiments of the present invention, in order to enable such voltage VD1, VD2 and VD3 are substantially the same, the operation
The non-inverting input of amplifier OP2 can receive voltage VD1, as shown in Figure 3.In addition, with reference to Fig. 4, the feedback transistor
M5 is a NMOS transistor, has a drain electrode of the non-inverting input for being coupled to operational amplifier OP2, is coupled to this
One grid of the output end of operational amplifier OP2, and it is coupled to a source electrode of the base stage of bipolar transistor Q1.In order to
So that such voltage VD1, VD2 and VD3 are substantially the same, the inverting input of operational amplifier OP2 may be coupled to this
PMOS transistor M2, or it is coupled to PMOS transistor M1.
Again referring to Fig.1, what traditional energy-gap reference circuit was provided stabilizes the output voltage VOUT with zero-temperature coefficient
Voltage level be about 1.25V.However, disclosed energy-gap reference circuit can be provided with the defeated of lower voltage level
Go out voltage.Illustrate by taking Fig. 2 as an example, when the resistance value of resistance R2 in the bleeder circuit 24 is identical as the resistance value of resistance R3, the energy gap
The voltage level for stabilizing the output voltage VREF with zero-temperature coefficient that reference circuit 200 is provided is by selection appropriate
It, can be down to 0.63V, this is because the VEB1 in formula (4) can be multiplied by after the numerical value or resistance R4 of m is to the ratio of resistance R1
R3/ (R2+R3), and reduce the voltage level of VREF.
Energy-gap reference circuit 200 shown in Fig. 2 provides stable output voltage VREF to internal circuit.However, this hair
It is bright should not be as limit.With reference to Fig. 5, which provides stable output current IREF to internal circuit.It should
The temperature coefficient of output current IREF according to formula (3) can by selection resistance R1 temperature coefficient or change the PMOS crystal
Pipe M3 is adjusted the breadth length ratio of PMOS transistor M2.
The technology contents and technical characterstic of the present invention have revealed that as above, however those skilled in the art are still potentially based on this hair
Bright teaching and announcement and make various replacements and modification without departing substantially from spirit of that invention.Therefore, protection scope of the present invention should not
It is limited to those disclosed embodiments, and should includes various replacements and modification without departing substantially from the present invention, and is appended claims
Covered.
Claims (10)
1. a kind of energy-gap reference circuit, including：
First operational amplifier has the first input, the second input and the first output；
Second operational amplifier is inputted with third, the 4th input and the second output；
First current source is coupled between supply power supply node and first input of first operational amplifier；
Second current source is coupled between the supply power supply node and second input of first operational amplifier；
Third current source is coupled between the supply power supply node and the third input of the second operational amplifier；
First bipolar transistor has the emitter for being coupled to first current source, and connect with being coupled to base stage
The collector of ground node；
Second bipolar transistor has the base stage for the base stage for being coupled to first bipolar transistor, has emitter,
With with the collector for being coupled to the ground nodes；
Feedback element is coupled between the third current source and the base stage of second bipolar transistor, the feedback element by
Second output of the second operational amplifier is controlled；And
Bleeder circuit, to the third of the second operational amplifier input and second bipolar transistor the base stage it
Between voltage difference divided to provide reference voltage；
Wherein, the 4th input of the second operational amplifier be coupled to first operational amplifier first input and this
One of which in the second input the two of one operational amplifier.
2. energy-gap reference circuit according to claim 1 further includes second resistance, which is coupled to this second pair
Between the base stage and the ground nodes of polar transistor.
3. energy-gap reference circuit according to claim 2, the wherein bleeder circuit include：
Multiple resistance, the resistance are connected in series in third input and second bipolar transistor of the second operational amplifier
Between the base stage of pipe, to provide the reference voltage.
4. energy-gap reference circuit according to claim 2, the wherein feedback element are PMOS transistor, have and be coupled to
The drain electrode of the base stage of first bipolar transistor is coupled to the source electrode of the third input of the second operational amplifier, and
It is coupled to the grid of second output of the second operational amplifier.
5. energy-gap reference circuit according to claim 2, the wherein feedback element are NMOS transistor, have and be coupled to
The source electrode of the base stage of first bipolar transistor is coupled to the drain electrode of the third input of the second operational amplifier, and
It is coupled to the grid of second output of the second operational amplifier.
6. energy-gap reference circuit according to claim 2, the wherein positive temperature coefficient of the reference voltage by increase this
Three current sources obtain the current value ratio of second current source.
7. energy-gap reference circuit according to claim 2, the wherein positive temperature coefficient of the reference voltage by increase this
Two resistance obtain the resistance ratio of the first resistor.
8. the negative temperature coefficient of energy-gap reference circuit according to claim 3, the wherein reference voltage is adjusted by this point
The resistance value of resistance described in volt circuit obtains.
9. energy-gap reference circuit according to claim 2, the wherein reference voltage are less than 1.25V.
10. energy-gap reference circuit according to claim 2, the wherein reference voltage are equal to 0.63V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710058122.XA CN108345336B (en) | 2017-01-23 | 2017-01-23 | Energy gap reference circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710058122.XA CN108345336B (en) | 2017-01-23 | 2017-01-23 | Energy gap reference circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108345336A true CN108345336A (en) | 2018-07-31 |
| CN108345336B CN108345336B (en) | 2020-04-28 |
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ID=62963296
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710058122.XA Active CN108345336B (en) | 2017-01-23 | 2017-01-23 | Energy gap reference circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113467561A (en) * | 2020-03-31 | 2021-10-01 | 爱思开海力士有限公司 | Reference voltage generating circuit |
| CN113934252A (en) * | 2020-07-13 | 2022-01-14 | 瑞昱半导体股份有限公司 | Voltage reduction circuit for energy gap reference voltage circuit |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200832099A (en) * | 2007-01-22 | 2008-08-01 | Faraday Tech Corp | Bandgap reference circuit |
| TW201040687A (en) * | 2009-05-07 | 2010-11-16 | Aicestar Technology Suzhou Corp | Bandgap circuit |
| TW201525647A (en) * | 2013-12-27 | 2015-07-01 | Silicon Motion Inc | Bandgap reference generating circuit |
| CN105300464A (en) * | 2014-07-02 | 2016-02-03 | 晶豪科技股份有限公司 | Band-gap reference circuit |
-
2017
- 2017-01-23 CN CN201710058122.XA patent/CN108345336B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200832099A (en) * | 2007-01-22 | 2008-08-01 | Faraday Tech Corp | Bandgap reference circuit |
| TW201040687A (en) * | 2009-05-07 | 2010-11-16 | Aicestar Technology Suzhou Corp | Bandgap circuit |
| TW201525647A (en) * | 2013-12-27 | 2015-07-01 | Silicon Motion Inc | Bandgap reference generating circuit |
| CN105300464A (en) * | 2014-07-02 | 2016-02-03 | 晶豪科技股份有限公司 | Band-gap reference circuit |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113467561A (en) * | 2020-03-31 | 2021-10-01 | 爱思开海力士有限公司 | Reference voltage generating circuit |
| US11360501B2 (en) | 2020-03-31 | 2022-06-14 | SK Hynix Inc. | Reference voltage generation circuit |
| CN113934252A (en) * | 2020-07-13 | 2022-01-14 | 瑞昱半导体股份有限公司 | Voltage reduction circuit for energy gap reference voltage circuit |
| CN113934252B (en) * | 2020-07-13 | 2022-10-11 | 瑞昱半导体股份有限公司 | Voltage reduction circuit for energy gap reference voltage circuit |
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| Publication number | Publication date |
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| CN108345336B (en) | 2020-04-28 |
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