CN208506628U - Reference voltage circuit - Google Patents
Reference voltage circuit Download PDFInfo
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- CN208506628U CN208506628U CN201820839706.0U CN201820839706U CN208506628U CN 208506628 U CN208506628 U CN 208506628U CN 201820839706 U CN201820839706 U CN 201820839706U CN 208506628 U CN208506628 U CN 208506628U
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Abstract
This application discloses a kind of reference voltage circuit, which includes: first compensation phase circuit, for generating the unrelated electric current of single order temperature；Curvature compensation circuit, with first compensation phase circuit connection, for generating the electric current of high-order temperature characterisitic, and the electric current superposition unrelated with single order temperature generates the unrelated electric current of high-order temperature；Voltage generation circuit, and curvature compensation circuit connection, for generating reference voltage according to the unrelated electric current of high-order temperature；Wherein, curvature compensation circuit includes current source and the first triode, and current source and the cooperation of the first triode generate the electric current of high-order temperature characterisitic, and current source is the current source of zero-temperature coefficient.By the above-mentioned means, the application can be realized high-order temperature compensated, and circuit structure is simply easy to accomplish.
Description
Technical field
The present invention relates to the fields of voltage generation circuit, more particularly to a kind of reference voltage circuit.
Background technique
An internal reference voltage is largely required in semiconductor integrated circuit, in order in certain temperature range,
Reference voltage is able to maintain constant, realizes often through the mode of temperature first compensation phase, and first compensation phase circuit structure is complicated, or
Person has only completed the compensation to the single order temperature coefficient of reference voltage in certain existing schemes, and general temperature coefficient is all tens
Ppm/ DEG C, some precision prescribeies it is higher, it is temperature coefficient very little application in, this compensation does not reach requirement, thus proposition two
Perhaps structure is complicated with the temperature-compensation circuit of the existing second order of the temperature-compensating of higher order or higher order for rank, and it is more difficult to realize.
Utility model content
The application mainly solving the technical problems that provide a kind of reference voltage circuit, can be realized it is high-order temperature compensated,
And circuit structure is simply easy to accomplish.
In order to solve the above technical problems, the technical solution that the utility model uses is: providing a kind of reference voltage electricity
Road, the reference voltage circuit include: first compensation phase circuit, for generating the unrelated electric current of single order temperature；Curvature compensation circuit, with
First compensation phase circuit connection, for generating the electric current of high-order temperature characterisitic, and the electric current superposition unrelated with single order temperature generates temperature
Spend unrelated electric current；Voltage generation circuit, it is electric for generating benchmark according to the unrelated electric current of temperature with curvature compensation circuit connection
Pressure；Wherein, curvature compensation circuit includes current source and the first triode, and current source and the cooperation of the first triode generate high-order temperature
The electric current of characteristic, current source are the current source of zero-temperature coefficient.
The application includes: first compensation phase circuit by setting reference voltage circuit, for generating the unrelated electricity of single order temperature
Stream；Curvature compensation circuit, and first compensation phase circuit connection, for generating the electric current of high-order temperature characterisitic, and with single order temperature without
The electric current superposition of pass generates the unrelated electric current of temperature；Voltage generation circuit, and curvature compensation circuit connection, for according to temperature without
The electric current of pass generates reference voltage；Wherein, curvature compensation circuit includes current source and the first triode, current source and the one or three pole
Pipe cooperation generates the electric current of high-order temperature characterisitic, and current source is the current source of zero-temperature coefficient, using a job in zero-temperature coefficient
The base emitter voltage of coefficient current power supply compensates high-order temperature coefficient, can be realized high-order temperature compensated, and circuit structure
It is simple easy to accomplish.
Detailed description of the invention
Fig. 1 is the electrical block diagram of the reference voltage circuit of the application first embodiment；
Fig. 2 is the electrical block diagram of the reference voltage circuit of the application second embodiment.
Specific embodiment
The application is described in detail with reference to the accompanying drawings and examples.
Referring to Fig. 1, the electrical block diagram of the reference voltage circuit of the application first embodiment.
In the present embodiment, reference voltage circuit includes that first compensation phase circuit 11, curvature compensation circuit 12 and voltage are raw
At circuit 13.
First compensation phase circuit 11 is for generating the unrelated electric current of single order temperature.For example, the unrelated electric current of single order temperature is one
The electric current that rank temperature coefficient is zero.
Curvature compensation circuit 12 is connect with first compensation phase circuit 11, and curvature compensation circuit 12 is for generating high-order temperature characterisitic
Electric current, and the electric current superposition unrelated with the single order temperature that first compensation phase circuit 11 generates generates the unrelated electric current of temperature.For example,
The electric current of high-order temperature characterisitic is that the relevant electric current of second-order temperature or the relevant electric current of other high-order temperature, high-order temperature are special
Property electric current the high-order temperature coefficient electric current unrelated with single order temperature in high-order temperature coefficient offset after form high-order temperature
The electric current (for example, electric current of second order zero-temperature coefficient) that coefficient is zero.
Voltage generation circuit 13 is connect with curvature compensation circuit 12, and voltage generation circuit 13 is used for unrelated according to high-order temperature
Electric current generate high-order zero-temperature coefficient reference voltage.So that generate reference voltage in certain temperature range not with
Temperature change.
Wherein, curvature compensation circuit 12 includes current source I1 and the first triode Q1, current source I1 and the first triode Q1
Cooperation generates the electric current of high-order temperature characterisitic, and current source I1 is the current source of zero-temperature coefficient.
Optionally, curvature compensation circuit 12 can also include first resistor R1, the collector connection the of the first triode Q1
The emitter of one voltage VDD, the first triode Q1 passes through current source I1 connection second voltage VSS, the transmitting of the first triode Q1
Pole also passes through the output end of first resistor R1 connection first compensation phase circuit 11 and the input terminal of voltage generation circuit 13, so that first
What the emitter of triode Q1 was exported by the electric current of first resistor R1 output high-order temperature characterisitic and with first compensation phase circuit 11
Voltage generation circuit 13 is flowed into after the unrelated electric current superposition of temperature.
Optionally, voltage generation circuit 13 includes 3rd resistor R3, the first end of 3rd resistor R3 and the first triode Q1
Base stage and single order temperature-compensation circuit 11 connect, the second end of 3rd resistor R3 connects second voltage VSS.
Optionally, first compensation phase circuit 11 include current mirroring circuit 111, the second triode Q2, third transistor Q3 and
Second resistance R2, the input terminal of current mirroring circuit 111 connect first voltage VDD, and current mirroring circuit 111 is used for respectively in current mirror
The first output end and second output terminal of circuit 111 generate the first electric current and the second electric current being equal to each other, the second triode Q2
Collector connection current mirroring circuit 111 the first output end, the collector connection current mirroring circuit 111 of third transistor Q3
Second output terminal, the emitter of the second triode Q2 connect the first end of the 4th resistance R4, the second end of the 4th resistance R4 and the
The first end of two resistance R2 connects, the second end of second end connection the second voltage VSS and 3rd resistor R3 of second resistance R2, the
The emitter of three triode Q3 connects the second end connection of the 4th resistance R4, the base stage and third transistor Q3 of the second triode Q2
Base stage connection.
Optionally, current mirroring circuit 111 includes the first field effect transistor P1, the second field effect transistor P2 and third
Field effect transistor N1.The first path terminal of first field effect transistor P1 connects first voltage, the first field effect transistor P1
Alternate path end as current mirroring circuit 111 the first output end connect the second triode Q2 collector, the first field-effect
The control terminal of transistor P1 connects the collector of the second triode Q2；The first path terminal connection the of second field effect transistor P2
The alternate path end of one voltage VDD, the second field effect transistor P2 connects third as the second output terminal of current mirroring circuit 111
The collector of triode Q3, the control terminal of the second field effect transistor P2 connect the collector of the second triode Q2；Third field effect
The first path terminal of transistor N1 is answered to connect first voltage VDD, the alternate path end of third field effect transistor N1 connects third
The first end of resistance R3, the collector of the control terminal connection third transistor Q3 of third field effect transistor N1；First triode
Q1, the second triode Q2, third transistor Q3 base stage be all connected with the first end of 3rd resistor R3.
Optionally, the first field effect transistor P1 and the second field effect transistor P2 is p type field effect transistor, third
Field effect transistor N1 is n type field effect transistor.Certainly, in other embodiments, the first field effect transistor P1, second
Effect transistor P2 and third field effect transistor N1 can be p type field effect transistor or n type field effect transistor, sheet
Application embodiment does not limit this.
Optionally, in the present embodiment, the first field effect transistor P1, the second field effect transistor P2 and third field effect
Answering transistor N1 can be junction field effect transistor (Junction Field-Effect Transistor, JFET), at it
In his embodiment, the first field effect transistor P1, the second field effect transistor P2 and third field effect transistor N1 can be
Other kinds of field effect transistor, the embodiment of the present application do not limit this.
Optionally, the first path terminal of the first field effect transistor P1 and alternate path end respectively drain electrode and source electrode, the
The first path terminal of two field effect transistor P2 and alternate path end respectively drain electrode and source electrode, third field effect transistor N1's
First path terminal and alternate path end are respectively drain electrode and source electrode.In other embodiments, the first field effect transistor P1, second
The source electrode and drain electrode of field effect transistor P2 and third field effect transistor N1 can be interchanged, and the application does not limit this.
The principle of said reference potential circuit is illustrated below.
First field effect transistor P1 and the second field effect transistor P2 forms current mirror load, passes through third field-effect tube
The electric current that N1 output feedback flows through the second triode Q2 and third transistor Q3 is equal.Do not considering curvature compensation circuit 12
In the case of, the difference of (VBE3-VBE2) of the second triode Q2 and third transistor Q3 is PTAT (proportional to
Absolute temperature, and absolute temperature is proportional) voltage, the PTAT current generated on the 4th resistance R4 flows into
Second resistance R2, the PTAT voltage VR2 on second resistance R2 can compensate the negative temperature system of VBE3 on third transistor Q3
Number, specific formula for calculation be Vref=VBE3+ (R3/R2) * (VBE3-VBE2), VBE3-VBE2=VTln (Is2/Is3), wherein
VBE is base emitter voltage, and Is is saturation current, by adjusting proportionality coefficient (R3/R2), reaches the benchmark electricity in room temperature
Pressing Vref single order temperature coefficient is zero.
In other words, current mirroring circuit 111 generates two equal electric currents and separately flows into the second triode Q2 and the three or three pole
First electric current of the single order positive temperature coefficient flowed at pipe Q3, D1 node through the 4th resistance R4 flows into second resistance R2 and second
Positive temperature coefficient voltage (the relevant voltage of single order temperature) is generated on resistance R2, the positive temperature coefficient voltage and third transistor Q3
On negative temperature coefficient (the relevant voltage of single order temperature) voltage VBE3 superposition after obtain the incoherent voltage of single order temperature, one
Under the action of rank compensation circuit 11, flow through second resistance R2 is the electric current of positive temperature coefficient, and flow through 3rd resistor R3 is one
The incoherent electric current of rank temperature.It is illustrated further combined with curvature compensation circuit 12.The zero-temperature coefficient system flowed through through current source I1
Several electric currents flows through the second electric current stream that the first triode Q1 generates pressure difference and generates high-order temperature characterisitic on first resistor R1
Enter D1 node, the second electric current generates the relevant voltage of high-order temperature on second resistance R2, and the relevant voltage of the high-order temperature is made
The relevant electric current of high-order temperature is generated for 3rd resistor R3, the relevant electric current of high-order temperature and above-mentioned single order temperature are uncorrelated
Electric current superposition by the relevant partial offset of high-order temperature, the incoherent electric current of high-order temperature is generated on 3rd resistor R3.
Reference voltage is the voltage at the both ends 3rd resistor R3, defeated between second node D2 and the second end of 3rd resistor R3
Out.
Specifically, the first triode Q1 flows through zero-temperature coefficient electrical current i1, base emitter voltage such as following formula:
VBE1=VG (T0)-(T/T0) * (VG (T0)-VBE3 (T0))-η VTln (T/T0) (1)
Third transistor Q3 flows through PTAT current, VBE3 such as following formula
VBE3=VG (T0)-(T/T0) * (VG (T0)-VBE3 (T0))-(η -1) VTln (T/T0) (2)
VBE1-VBE3=(T/T0) * (VBE1 (T0)-VBE3 (T0))-VTln (T/T0) (3)
Vref=VBE3+ (R3/R2) * (VBE3-VBE2)-(R3/R1) * (VBE1-VBE3)
=VG (T0)-(T/T0) * { VG (T0)-VBE3 (T0)-(R3/R2) * [VBE3 (T0)-VBE2 (T0)]+(R3/R1) *
[VBE1(T0)-VBE2(T0)]}–[η-1-(R3/R1)]VTln(T/T0) (4)
The ratio of the resistance value of 3rd resistor R3 and first resistor R1 is η -1, wherein the saturation electricity that η is the first triode Q1
Humidity index is flowed, as (R3/R1)=η -1, the producing method that high-order temperature coefficient VTln (T/T0) is zero, i1 can also be by base
Quasi- voltage generates, above in formula, VG (T0) is bandgap voltage reference, and VBE is base emitter voltage.
η be the first triode Q1 saturation current humidity index, specifically with the doping concentration and production of the first triode Q1
Technique is related, and the saturation current humidity index of each triode is fixed value.
Wherein, the first triode Q1, the second triode Q2, tri- triodes of third transistor Q3 η value can be equal.
Referring to Fig. 2, the electrical block diagram of the reference voltage circuit of the application second embodiment.
The difference is that, the current mirroring circuit 211 in second embodiment includes the 5th with the application first embodiment
Resistance R5, the 6th resistance R6 and operational amplifier A.
The first end of 5th resistance R5 connects first voltage VDD, and the second end of the 5th resistance R5 connects the second triode Q2
Collector；The first end of 6th resistance R6 connects first voltage VDD, and the second end of the 6th resistance R6 connects third transistor Q3
Collector；The first power end of operational amplifier A and second source end are separately connected first voltage VDD and second voltage VSS,
The first input end of operational amplifier A connects the second end of the 5th resistance R5, the second input terminal connection the 6th of operational amplifier A
The second end of resistance R6；The base stage of first triode Q1, the second triode Q2 and third transistor Q3 are all connected with operation amplifier
The output end of device A, and the output end of operational amplifier A is also connect with the first end of 3rd resistor R3.
Optionally, the first input end of operational amplifier A is inverting input terminal, and the second input terminal of operational amplifier A is
Non-inverting input terminal.In other embodiments, the first input end of operational amplifier A can be non-inverting input terminal, operational amplifier A
The second input terminal be inverting input terminal, the embodiment of the present application do not limit this.
In the present embodiment, use the 5th resistance R5 and the 6th resistance R6 as load detecting the second triode Q2 and the three or three
The electric current that pole pipe Q3 flows through feeds back the electric current phase for flowing through the second triode Q2 and third transistor Q3 by operational amplifier A
Deng.
In other embodiments, current mirroring circuit can be using other structures, as long as can guarantee that current mirroring circuit can
Generate that equal electric current inputs the second triode Q2 respectively and third transistor Q3, the embodiment of the present application do not limit this
It is fixed.
The application includes: first compensation phase circuit by setting reference voltage circuit, for generating the unrelated electricity of single order temperature
Stream；Curvature compensation circuit, and first compensation phase circuit connection, for generating the electric current of high-order temperature characterisitic, and with single order temperature without
The electric current superposition of pass generates the unrelated electric current of temperature；Voltage generation circuit, and curvature compensation circuit connection, for according to temperature without
The electric current of pass generates reference voltage；Wherein, curvature compensation circuit includes current source and the first triode, current source and the one or three pole
Pipe cooperation generates the electric current of high-order temperature characterisitic, and current source is the current source of zero-temperature coefficient, using a job in zero-temperature coefficient
The base emitter voltage of coefficient current power supply compensates high-order temperature coefficient, can be realized high-order temperature compensated, and circuit structure
It is simple easy to accomplish.
The foregoing is merely the embodiments of the present invention, and therefore it does not limit the scope of the patent of the utility model, all
It is equivalent structure or equivalent flow shift made based on the specification and figures of the utility model, directly or indirectly uses
In other related technical areas, it is also included in the patent protection scope of the utility model.
Claims (10)
1. a kind of reference voltage circuit, which is characterized in that the reference voltage circuit includes:
First compensation phase circuit, for generating the unrelated electric current of single order temperature；
Curvature compensation circuit, and the first compensation phase circuit connection, for generating the electric current of high-order temperature characterisitic, and with described one
The unrelated electric current superposition of rank temperature generates the unrelated electric current of high-order temperature；
Voltage generation circuit, and the curvature compensation circuit connection, for generating base according to the unrelated electric current of the high-order temperature
Quasi- voltage；
Wherein, the curvature compensation circuit includes at least current source and the first triode, the current source and the one or three pole
Pipe cooperation generates the electric current of the high-order temperature characterisitic, and the current source is the current source of zero-temperature coefficient.
2. reference voltage circuit according to claim 1, which is characterized in that the curvature compensation circuit further includes the first electricity
The collector of resistance, first triode connects first voltage, and the emitter of first triode is connected by the current source
Second voltage is connect, the emitter of first triode also connects the output of the first compensation phase circuit by the first resistor
The input terminal at end and the voltage generation circuit, so that the emitter of first triode exports institute by the first resistor
It states the electric current of high-order temperature characterisitic and flows into the electricity after the electric current superposition unrelated with the temperature of the first compensation phase circuit output
Press generative circuit.
3. reference voltage circuit according to claim 2, which is characterized in that the voltage generation circuit includes third electricity
Resistance, the first end of the 3rd resistor is connect with the base stage of first triode and the single order temperature-compensation circuit, described
The second end of 3rd resistor connects the second voltage.
4. reference voltage circuit according to claim 3, which is characterized in that the first compensation phase circuit includes current mirror electricity
Road, the second triode, third transistor, second resistance and the 4th resistance, the current mirroring circuit input terminal connection described in
First voltage, the current mirroring circuit is for generating that in the first output end and second output terminal of the current mirroring circuit respectively
This equal the first electric current and the second electric current, the collector of second triode connect the first output of the current mirroring circuit
End, the collector of the third transistor connect the second output terminal of the current mirroring circuit, the transmitting of second triode
Pole connects the first end of the 4th resistance, and the second end of the 4th resistance is connect with the first end of the second resistance, institute
The second end for stating second resistance connects the second end of the second voltage and the 3rd resistor, the transmitting of the third transistor
Pole connects the second end of the 4th resistance, and the base stage of second triode is connect with the base stage of the third transistor.
5. reference voltage circuit according to claim 4, which is characterized in that the current mirroring circuit includes the first field-effect
Transistor, the second field effect transistor and third field effect transistor, the first path terminal of first field effect transistor
Connect the first voltage, first output of the alternate path end of first field effect transistor as the current mirroring circuit
End connects the collector of second triode, and the control terminal of first field effect transistor connects second triode
Collector；First path terminal of second field effect transistor connects the first voltage, second field effect transistor
Alternate path end connect the collector of the third transistor as the second output terminal of the current mirroring circuit, described second
The control terminal of field effect transistor connects the collector of second triode；First access of the third field effect transistor
End connects the first voltage, and the alternate path end of the third field effect transistor connects the first end of the 3rd resistor,
The control terminal of the third field effect transistor connects the collector of the third transistor；First triode, described
Two triodes, the third transistor base stage be all connected with the first end of the 3rd resistor.
6. reference voltage circuit according to claim 5, which is characterized in that first field effect transistor and described
Two field effect transistors are p type field effect transistor, and the third field effect transistor is n type field effect transistor.
7. reference voltage circuit according to claim 5, which is characterized in that the first of first field effect transistor is logical
Terminal and alternate path end are respectively drain electrode and source electrode, the first path terminal of second field effect transistor and alternate path end
Respectively drain electrode and source electrode, the first path terminal of the third field effect transistor and alternate path end are respectively drain electrode and source
Pole.
8. reference voltage circuit according to claim 4, which is characterized in that the current mirroring circuit include the 5th resistance,
6th resistance and operational amplifier, the first end of the 5th resistance connect the first voltage, and the of the 5th resistance
Two ends connect the collector of second triode；The first end connection first voltage of 6th resistance, the described 6th
The second end of resistance connects the collector of the third transistor；First power end of the operational amplifier and second source end
It is separately connected the first voltage and the second voltage, the first input end of the operational amplifier connects the 5th resistance
Second end, the second input terminal of the operational amplifier connects the second end of the 6th resistance；First triode, institute
The base stage for stating the second triode and the third transistor is all connected with the output end of the operational amplifier, and the operation is put
The output end of big device is also connect with the first end of the 3rd resistor.
9. reference voltage circuit according to claim 8, which is characterized in that the first input end of the operational amplifier is
Inverting input terminal, the second input terminal of the operational amplifier are non-inverting input terminal.
10. according to reference voltage circuit described in claim 3-9 any one, which is characterized in that the 3rd resistor and institute
The ratio for stating the resistance value of first resistor is η -1, wherein η is the saturation current humidity index of first triode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820839706.0U CN208506628U (en) | 2018-05-31 | 2018-05-31 | Reference voltage circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820839706.0U CN208506628U (en) | 2018-05-31 | 2018-05-31 | Reference voltage circuit |
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| CN208506628U true CN208506628U (en) | 2019-02-15 |
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ID=65287809
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646845A (en) * | 2018-05-31 | 2018-10-12 | 东莞赛微微电子有限公司 | Reference voltage circuit |
| CN110471483A (en) * | 2019-08-13 | 2019-11-19 | 安徽科技学院 | A kind of high-precision voltage stabilizing circuit of adjustable output |
-
2018
- 2018-05-31 CN CN201820839706.0U patent/CN208506628U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108646845A (en) * | 2018-05-31 | 2018-10-12 | 东莞赛微微电子有限公司 | Reference voltage circuit |
| CN108646845B (en) * | 2018-05-31 | 2024-05-28 | 广东赛微微电子股份有限公司 | Reference voltage circuit |
| CN110471483A (en) * | 2019-08-13 | 2019-11-19 | 安徽科技学院 | A kind of high-precision voltage stabilizing circuit of adjustable output |
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Address after: 523808 room 402, 404, 408, building 1, no.6, South Industrial Road, Songshanhu Park, Dongguan City, Guangdong Province Patentee after: Guangdong Saiwei Electronics Co.,Ltd. Address before: Room 410, 411 and 412, building 3, no.6, Gongye South Road, Songshanhu high tech Industrial Development Zone, Dongguan City, Guangdong Province 523808 Patentee before: DONGGUAN CELLWISE MICROELECTRONICS Co.,Ltd. |
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