CN105425891A - Zero-temperature coefficient adjustable voltage reference source - Google Patents
Zero-temperature coefficient adjustable voltage reference source Download PDFInfo
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- CN105425891A CN105425891A CN201510800847.2A CN201510800847A CN105425891A CN 105425891 A CN105425891 A CN 105425891A CN 201510800847 A CN201510800847 A CN 201510800847A CN 105425891 A CN105425891 A CN 105425891A
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Abstract
The invention discloses a zero-temperature coefficient adjustable voltage reference source. For achieving the effect that the output reference voltage of an adjustable resistor R2 does not vary with the temperature, reference current sources I1 and I2 with the positive temperature coefficient and the negative temperature coefficient are designed, PMOS transistors M7 and M8 constitute a mirror image positive temperature coefficient current source of the cascade current source I1, PMOS transistor M15 and M16 constitute a mirror image positive temperature coefficient current source of the cascade current source I2, output of the current source I1 is conducted by a drain electrode of the PMOS transistor M8, output of the current source I2 is conducted by a drain electrode of the PMOS tube M16, the drain electrode of M8 is connected with the drain electrode of M16 so that a zero-temperature coefficient reference current IREF can be achieved, and the current sources I1 and I2 with the positive temperature coefficient and the negative temperature coefficient are added according to appropriate weight. The zero-temperature coefficient adjustable voltage reference source REGV is constituted by the zero-temperature coefficient reference current IREF and the adjustable resistor R2, in other words, the drain electrode of the PMOS transistor M8 and the drain electrode of the PMOS transistor M16 are connected with each other and then connected with one end of the resistor R2, and the other end of R2 is earthed. By means of the mode, the zero-temperature coefficient adjustable voltage reference source can be obtained, and the limitation that only fixed band-gap reference voltage can be generated is overcome.
Description
Technical field
The present invention relates to field of analog integrated circuit, particularly relate to a kind of zero-temperature coefficient adjustable voltage reference source be applied in band gap voltage reference source design.
Background technology
In the design of Analogous Integrated Electronic Circuits, the application of voltage reference is more and more general, also becomes more and more important.The voltage of voltage reference exports general change with power supply and changes, and its Power Supply Rejection Ratio is high, should have good temperature characterisitic simultaneously.In all voltage reference structures, the output characteristics of band-gap reference is the most outstanding beyond doubt.Although usual band gap reference can produce VDD and the metastable reference voltage of temperature, its limitation is that it can only produce fixing reference voltage.Obviously, the restriction for circuit designers of fixing reference voltage is very large, particularly when power consumption requirements and core voltage more and more lower, want to overcome the problems referred to above and restriction, must improve to some extent to the structure of reference source.The reference voltage that common band-gap reference produces is 1.25V(normal temperature), close to the energy gap of silicon, its output can not arbitrarily regulate.In addition, along with chip power voltage constantly reduces, the 1.25V of usual band gap reference exports the demand that cannot meet design.
Summary of the invention
The technical matters that the present invention mainly solves is to provide a kind of zero-temperature coefficient adjustable voltage reference source, and wherein band-gap reference voltage circuit has the adjustable function of output, utilizes the base emitter voltage of bipolar transistor
to be inversely proportional to structure current source circuit with absolute temperature, and to be operated in the difference of base emitter voltage of two bipolar transistors under different electric current
current source circuit is built with PTAT.Obtained the reference voltage of zero-temperature coefficient by the weighting summation of the two electric current in design.
For solving the problems of the technologies described above, the technical scheme that the present invention adopts is: provide a kind of zero-temperature coefficient adjustable voltage reference source, comprising: positive temperature coefficient (PTC) electric current source generating circuit, negative temperature parameter current source generating circuit and adjustable resistance R2; Described positive temperature coefficient (PTC) electric current source generating circuit comprises PMOS transistor M7, M8 and bipolar transistor Q1, Q2; Difference between the base emitter voltage being operated in bipolar transistor Q1, the Q2 under different electric current
with PTAT, utilize current mirroring circuit to obtain the positive temperature coefficient (PTC) current source be made up of PMOS transistor M7, M8 be directly proportional to temperature, PMOS transistor M7, M8 form cascode current source I
1mirror image positive temperature coefficient (PTC) current source; Described negative temperature parameter current source generating circuit comprises PMOS transistor M15, M16 and bipolar transistor Q3; The base emitter voltage of bipolar transistor Q3
be inversely proportional to absolute temperature, utilize current mirroring circuit to obtain the negative temperature parameter current source be made up of PMOS transistor M15, M16 be inversely proportional to temperature, PMOS transistor M15, M16 form cascode current source I
2mirror image negative temperature parameter current source; Current source I
1output by PMOS transistor M8 drain export, current source I
2output drained by PMOS transistor M16 and export, the drain electrode of PMOS transistor M8 and M16 is connected and realizes zero-temperature coefficient reference current I
rEF; Current source I
1with current source I
2with suitable weight
,
be added, make
set up, obtain the current reference with zero-temperature coefficient
; The drain electrode of PMOS transistor M8 and M16 is connected and is connected with one end of adjustable resistance R2, the other end ground connection of adjustable resistance R2.
Preferably, described positive temperature coefficient (PTC) electric current source generating circuit also comprises PMOS transistor M1, M2, M3, M4, nmos pass transistor M5, M6, resistance R1 and positive temperature coefficient (PTC) start-up circuit module STARTUP; Form by PMOS transistor M1, M2, M3, M4 the positive temperature coefficient (PTC) voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M5, M6 form forms automatic biasing, positive temperature coefficient (PTC) start-up circuit module STARTUP accesses the drain electrode end of nmos pass transistor M5; The base stage of bipolar transistor Q1, Q2 forms diode with collector short circuit and the emitter of bipolar transistor Q2 is connected with one end of resistance R1, the other end of resistance R1 is connected with the source electrode of nmos pass transistor M6, the emitter of bipolar transistor Q1 is connected with the source electrode of nmos pass transistor M5, and the source terminal voltage of nmos pass transistor M5, M6 is equal; The grid of PMOS transistor M7, M8 is connected to realize current mirror respectively at the grid of transistor M2, M4; The electric current I of positive temperature coefficient (PTC)
1for
, the current source being made up of cascode structure PMOS transistor M7, M8 is formed; Bipolar transistor Q2 is larger than Q1, the difference of bipolar transistor Q1, Q2 base emitter voltage
there is positive temperature coefficient (PTC):
, wherein K is bipolar transistor Q2 and the ratio of Q1 number of parallel; The voltage at Q1 two ends
equal the voltage at Q2 two ends
with the voltage sum at resistance R1 two ends, namely
, can release:
,
; The electric current flowing through two branch roads of bipolar transistor Q1, Q2 is equal, and the difference of its base-emitter voltage drop drops on resistance R1.
Preferably, described negative temperature parameter current source generating circuit also comprises PMOS transistor M9, M10, M11, M12, nmos pass transistor M13, M14, resistance R3 and negative temperature coefficient start-up circuit module STARTUP; The negative temperature coefficient voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M13, M14 form forms automatic biasing is formed, the drain electrode end of negative temperature coefficient start-up circuit module STARTUP access transistor M13 by PMOS transistor M9, M10, M11, M12; Base stage and the collector short circuit of bipolar transistor Q3 form diode, and the emitter of bipolar transistor Q3 is connected with the source electrode of nmos pass transistor M13; The collector of bipolar transistor Q3 is connected to the ground and is connected with one end of resistance R3, and the R3 other end is connected with the source electrode of nmos pass transistor M14, and the source terminal voltage of nmos pass transistor M13, M14 is equal; The grid of PMOS transistor M15, M16 is connected to realize current mirror with the grid of PMOS transistor M10, M12 respectively; The electric current I of negative temperature coefficient
2for
, the current source being made up of cascode structure PMOS transistor M15, M16 is formed; Bipolar transistor Q3 base emitter voltage
namely the forward voltage of diode has negative temperature coefficient, under normal temperature is
, the electric current flowing through bipolar transistor Q3 and these two branch roads of resistance R3 is equal, that is:
,
.
Preferably, described PMOS transistor M8 is connected as the current source of zero-temperature coefficient with the drain electrode of M16
, positive temperature coefficient (PTC) current source and negative temperature parameter current source are added the current source obtaining zero-temperature coefficient with suitable weight, namely
; The temperature coefficient of the current source of zero-temperature coefficient is zero, that is:
, thus can obtain
; When
time,
; The adjustable voltage reference source of zero-temperature coefficient adds an adjustable resistance R2 by the current source of zero-temperature coefficient and forms, and namely PMOS transistor M8 is connected with the drain electrode of M16 and is connected with one end of resistance R2, the other end ground connection of R2; Zero-temperature coefficient variable voltage source REGV is resistance R2 both end voltage
.
The invention has the beneficial effects as follows: the invention provides a kind of zero-temperature coefficient adjustable voltage reference source circuit, adopt the current-mirror structure of cascade irrelevant to realize output reference voltage and supply voltage, the superposition of the current source of Positive and Negative Coefficient Temperature, to realize the reference source of zero-temperature coefficient, reaches output reference voltage by regulating resistance rail-to-rail.
Accompanying drawing explanation
Fig. 1 is the structural representation of zero-temperature coefficient adjustable voltage reference source circuit of the present invention;
Fig. 2 is the schematic diagram being realized zero-temperature coefficient adjustable reference voltage by the resistance of change adjustable resistance R2.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present invention is described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Refer to Fig. 1 and Fig. 2, the embodiment of the present invention comprises:
A kind of zero-temperature coefficient adjustable voltage reference source, have employed the auto bias circuit irrelevant with supply voltage in circuit design, reference source is mainly through being operated in the difference of the base emitter voltage of two bipolar transistors Q1, Q2 under different electric current
with PTAT, utilize the current mirroring circuit that is made up of nmos pass transistor M2, M4, M7, M8 thus obtain one be directly proportional to temperature form current source by nmos pass transistor M7, M8; The base emitter voltage of bipolar transistor in addition
be inversely proportional to absolute temperature, utilize the current mirroring circuit that is made up of nmos pass transistor M10, M12, M15, M16 thus obtain one be inversely proportional to temperature form current source by nmos pass transistor M15, M16; The weighting summation of both utilizations obtains the reference current source of zero-temperature coefficient, by being connected with adjustable resistance R2 thus obtaining zero-temperature coefficient adjustable voltage reference source, thus solves the limitation that can only produce fixing bandgap voltage reference.
Two had the amount of positive and negative temperature coefficient with suitable weight
,
be added, so result will be shown as zero-temperature coefficient; For the drain current I varying with temperature the contrary PMOS transistor M7 in direction, M8
1with the drain current I of PMOS transistor M15, M16
2, make
set up, so just obtain the current reference with zero-temperature coefficient
; Base stage and the emitter short circuit of bipolar transistor Q3 form diode, its base emitter voltage
namely the forward voltage of diode has negative temperature coefficient; The base stage and the emitter short circuit that are operated in two bipolar transistors Q1, Q2 under unequal electric current form diode, and the difference of its base emitter voltage has positive temperature coefficient (PTC); The voltage with Positive and Negative Coefficient Temperature is exported the electric current I of Positive and Negative Coefficient Temperature by the drain electrode of PMOS transistor M8, M16 by Self-bias Current mirror circuit
1, I
2, the electric current of this Positive and Negative Coefficient Temperature is with suitable weight
,
be connected with adjustable resistance R2 after addition, its output voltage REGV forms the wide output voltage of zero-temperature coefficient, can reach rail-to-rail scope.
Positive temperature coefficient (PTC) electric current source generating circuit comprises PMOS transistor M1, M2, M3, M4, M7, M8, nmos pass transistor M5, M6, bipolar transistor Q1, Q2, resistance R1 and positive temperature coefficient (PTC) start-up circuit module STARTUP; The positive temperature coefficient (PTC) voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M5, M6 form forms automatic biasing is formed, the drain electrode end of positive temperature coefficient (PTC) start-up circuit module STARTUP access transistor M5 by PMOS transistor M1, M2, M3, M4; Positive temperature coefficient (PTC) voltage source circuit forms diode by the base stage of two bipolar transistors Q1, Q2 with collector short circuit and the emitter of bipolar transistor Q2 is connected with one end of resistance R1, the other end of resistance R1 is connected with the source electrode of nmos pass transistor M6, the emitter of bipolar transistor Q1 is connected with the source electrode of nmos pass transistor M5, and the source terminal voltage of transistor M5, M6 is equal; The electric current of positive temperature coefficient (PTC)
for
, the current source being made up of cascode structure PMOS transistor M7, M8 is formed, and the grid of PMOS transistor M7, M8 is connected to realize current mirror respectively at the grid of transistor M2, M4; Bipolar transistor Q2 is larger than Q1, the difference of bipolar transistor Q1, Q2 base emitter voltage
there is positive temperature coefficient (PTC):
, wherein K is bipolar transistor Q2 and the ratio of Q1 number of parallel; The voltage at Q1 two ends
equal the voltage at Q2 two ends
with the voltage sum at resistance R1 two ends, namely
, can release:
,
; The electric current flowing through two branch roads of bipolar transistor Q1, Q2 is equal, and the difference of its base-emitter voltage drop drops on resistance R1.
Negative temperature parameter current source generating circuit comprises PMOS transistor M9, M10, M11, M12, M15, M16, nmos pass transistor M13, M14, bipolar transistor Q3, resistance R3 and negative temperature coefficient start-up circuit module STARTUP; The negative temperature coefficient voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M13, M14 form forms automatic biasing is formed, the drain electrode end of negative temperature coefficient start-up circuit module STARTUP access transistor M13 by PMOS transistor M9, M10, M11, M12; Negative temperature coefficient voltage source circuit forms diode by the base stage of bipolar transistor Q3 and collector short circuit, and the emitter of bipolar transistor Q3 is connected with the source electrode of nmos pass transistor M13; The collector of bipolar transistor Q3 is connected to the ground and is connected with one end of resistance R3, and the R3 other end is connected with the source electrode of nmos pass transistor M14, and the source terminal voltage of nmos pass transistor M13, M14 is equal; The electric current of negative temperature coefficient
for
, the current source being made up of cascode structure PMOS transistor M15, M16 is formed, and the grid of transistor M15, M16 is connected to realize current mirror respectively at the grid of transistor M10, M12; Bipolar transistor Q3 base emitter voltage
namely the forward voltage of diode has negative temperature coefficient, under normal temperature is
, the electric current flowing through bipolar transistor Q3 and these two branch roads of resistance R3 is equal, that is:
,
.
PMOS transistor M8 is connected as the current source of zero-temperature coefficient with the drain electrode of M16
; In order to obtain the current source of zero-temperature coefficient, the current source of Positive and Negative Coefficient Temperature can be made to be added with suitable weight and to obtain, namely
; The temperature coefficient of current source is made to be zero, that is:
, thus can obtain
.When
time, so
; The adjustable voltage reference source of zero-temperature coefficient adds an adjustable resistance R2 by the current source of zero-temperature coefficient and forms, and namely PMOS transistor M8 is connected with the drain electrode of M16 and is connected with one end of resistance R2, the other end ground connection of R2; So zero-temperature coefficient variable voltage source REGV and resistance R2 both end voltage are
.The invention provides a kind of zero-temperature coefficient adjustable voltage reference source circuit, adopt the current-mirror structure of cascade irrelevant to realize output reference voltage and supply voltage, the superposition of the current source of Positive and Negative Coefficient Temperature, to realize the reference source of zero-temperature coefficient, reaches output reference voltage by regulating resistance rail-to-rail.
The foregoing is only embodiments of the invention; not thereby the scope of the claims of the present invention is limited; every utilize instructions of the present invention and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present invention.
Claims (4)
1. a zero-temperature coefficient adjustable voltage reference source, is characterized in that, comprising: positive temperature coefficient (PTC) electric current source generating circuit, negative temperature parameter current source generating circuit and adjustable resistance R2; Described positive temperature coefficient (PTC) electric current source generating circuit comprises PMOS transistor M7, M8 and bipolar transistor Q1, Q2; Difference between the base emitter voltage being operated in bipolar transistor Q1, the Q2 under different electric current
with PTAT, utilize current mirroring circuit to obtain the positive temperature coefficient (PTC) current source be made up of PMOS transistor M7, M8 be directly proportional to temperature, PMOS transistor M7, M8 form cascode current source I
1mirror image positive temperature coefficient (PTC) current source; Described negative temperature parameter current source generating circuit comprises PMOS transistor M15, M16 and bipolar transistor Q3; The base emitter voltage of bipolar transistor Q3
be inversely proportional to absolute temperature, utilize current mirroring circuit to obtain the negative temperature parameter current source be made up of PMOS transistor M15, M16 be inversely proportional to temperature, PMOS transistor M15, M16 form cascode current source I
2mirror image negative temperature parameter current source; Current source I
1output by PMOS transistor M8 drain export, current source I
2output drained by PMOS transistor M16 and export, the drain electrode of PMOS transistor M8 and M16 is connected and realizes zero-temperature coefficient reference current I
rEF; Current source I
1with current source I
2with suitable weight
,
be added, make
set up, obtain the current reference with zero-temperature coefficient
; The drain electrode of PMOS transistor M8 and M16 is connected and is connected with one end of adjustable resistance R2, the other end ground connection of adjustable resistance R2.
2. zero-temperature coefficient adjustable voltage reference source according to claim 1, it is characterized in that: described positive temperature coefficient (PTC) electric current source generating circuit also comprises PMOS transistor M1, M2, M3, M4, nmos pass transistor M5, M6, resistance R1 and positive temperature coefficient (PTC) start-up circuit module STARTUP; Form by PMOS transistor M1, M2, M3, M4 the positive temperature coefficient (PTC) voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M5, M6 form forms automatic biasing, positive temperature coefficient (PTC) start-up circuit module STARTUP accesses the drain electrode end of nmos pass transistor M5; The base stage of bipolar transistor Q1, Q2 forms diode with collector short circuit and the emitter of bipolar transistor Q2 is connected with one end of resistance R1, the other end of resistance R1 is connected with the source electrode of nmos pass transistor M6, the emitter of bipolar transistor Q1 is connected with the source electrode of nmos pass transistor M5, and the source terminal voltage of nmos pass transistor M5, M6 is equal; The grid of PMOS transistor M7, M8 is connected to realize current mirror respectively at the grid of transistor M2, M4; The electric current I of positive temperature coefficient (PTC)
1for
, the current source being made up of cascode structure PMOS transistor M7, M8 is formed; Bipolar transistor Q2 is larger than Q1, the difference of bipolar transistor Q1, Q2 base emitter voltage
there is positive temperature coefficient (PTC):
, wherein K is bipolar transistor Q2 and the ratio of Q1 number of parallel; The voltage at Q1 two ends
equal the voltage at Q2 two ends
with the voltage sum at resistance R1 two ends, namely
, can release:
,
; The electric current flowing through two branch roads of bipolar transistor Q1, Q2 is equal, and the difference of its base-emitter voltage drop drops on resistance R1.
3. zero-temperature coefficient adjustable voltage reference source according to claim 2, it is characterized in that: described negative temperature parameter current source generating circuit also comprises PMOS transistor M9, M10, M11, M12, nmos pass transistor M13, M14, resistance R3 and negative temperature coefficient start-up circuit module STARTUP; The negative temperature coefficient voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M13, M14 form forms automatic biasing is formed, the drain electrode end of negative temperature coefficient start-up circuit module STARTUP access transistor M13 by PMOS transistor M9, M10, M11, M12; Base stage and the collector short circuit of bipolar transistor Q3 form diode, and the emitter of bipolar transistor Q3 is connected with the source electrode of nmos pass transistor M13; The collector of bipolar transistor Q3 is connected to the ground and is connected with one end of resistance R3, and the R3 other end is connected with the source electrode of nmos pass transistor M14, and the source terminal voltage of nmos pass transistor M13, M14 is equal; The grid of PMOS transistor M15, M16 is connected to realize current mirror with the grid of PMOS transistor M10, M12 respectively; The electric current I of negative temperature coefficient
2for
, the current source being made up of cascode structure PMOS transistor M15, M16 is formed; Bipolar transistor Q3 base emitter voltage
namely the forward voltage of diode has negative temperature coefficient, under normal temperature is
, the electric current flowing through bipolar transistor Q3 and these two branch roads of resistance R3 is equal, that is:
,
.
4. zero-temperature coefficient adjustable voltage reference source according to claim 3, is characterized in that: described PMOS transistor M8 is connected as the current source of zero-temperature coefficient with the drain electrode of M16
, positive temperature coefficient (PTC) current source and negative temperature parameter current source are added the current source obtaining zero-temperature coefficient with suitable weight, namely
; The temperature coefficient of the current source of zero-temperature coefficient is zero, that is:
, thus can obtain
; When
time,
; The adjustable voltage reference source of zero-temperature coefficient adds an adjustable resistance R2 by the current source of zero-temperature coefficient and forms, and namely PMOS transistor M8 is connected with the drain electrode of M16 and is connected with one end of resistance R2, the other end ground connection of R2; Zero-temperature coefficient variable voltage source REGV is resistance R2 both end voltage
.
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|---|---|---|---|
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|---|---|---|---|
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| CN106020318A (en) * | 2016-07-28 | 2016-10-12 | 北方电子研究院安徽有限公司 | High-accuracy low-temperature-drift bandgap reference voltage source |
| CN110888485A (en) * | 2019-10-09 | 2020-03-17 | 芯创智（北京）微电子有限公司 | Self-biased band gap reference circuit |
| CN111880600A (en) * | 2020-09-28 | 2020-11-03 | 深圳英集芯科技有限公司 | Constant-temperature current source, chip and electronic equipment |
| CN112230703A (en) * | 2020-10-30 | 2021-01-15 | 电子科技大学 | High-precision band-gap reference current source based on clamping technology |
| CN115357085A (en) * | 2022-08-30 | 2022-11-18 | 广东工业大学 | Self-biased CMOS voltage reference source and method for determining linear sensitivity and power supply rejection ratio |
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| CN115357085A (en) * | 2022-08-30 | 2022-11-18 | 广东工业大学 | Self-biased CMOS voltage reference source and method for determining linear sensitivity and power supply rejection ratio |
| CN115357085B (en) * | 2022-08-30 | 2023-08-08 | 广东工业大学 | Self-bias CMOS voltage reference source and method for determining linear sensitivity and power supply rejection ratio |
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Application publication date: 20160323 |