CN205176717U - Zero adjustable voltage reference source of temperature coefficient - Google Patents
Zero adjustable voltage reference source of temperature coefficient Download PDFInfo
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- CN205176717U CN205176717U CN201520925739.3U CN201520925739U CN205176717U CN 205176717 U CN205176717 U CN 205176717U CN 201520925739 U CN201520925739 U CN 201520925739U CN 205176717 U CN205176717 U CN 205176717U
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- temperature coefficient
- current source
- transistor
- source
- voltage
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Abstract
The utility model discloses a zero adjustable voltage reference source of temperature coefficient, for the output reference voltage that makes controlling resistor R2 not with temperature changes change, design positive negative temperature coefficient's reference current source I1 and I2, PMOS manages M7, M8 constitutes cascode electric current source I1 mirror image positive temperature coefficient electric current source, PMOS manages M15, M16 constitutes cascode electric current source I2 mirror image positive temperature coefficient electric current source, electric current source I1's output is by the drain output of PMOS pipe M8, electric current source I2's output is by the drain output of PMOS pipe M16, M8 and the continuous zero temperature coefficient reference current IREF that realizes of M16's drain electrode, positive negative temperature coefficient's electric current source I1 and I2 are with appropriate weight summation. Zero adjustable voltage reference source of temperature coefficient REGV adds controlling resistor R2 by zero temperature coefficient electric current source IREF and constitutes, and PMOS transistor M8 and M16's drain electrode links to each other and links to each other R2 other end ground connection with resistance R2 one end again. In this way, the utility model discloses can obtain zero adjustable voltage reference source of temperature coefficient, the solution can only produce fixed band gap reference voltage's limitation.
Description
Technical field
The utility model relates to field of analog integrated circuit, particularly relates to a kind of zero-temperature coefficient adjustable voltage reference source be applied in band gap voltage reference source design.
Background technology
In the design of Analogous Integrated Electronic Circuits, the application of voltage reference is more and more general, also becomes more and more important.The voltage of voltage reference exports general change with power supply and changes, and its Power Supply Rejection Ratio is high, should have good temperature characterisitic simultaneously.In all voltage reference structures, the output characteristics of band-gap reference is the most outstanding beyond doubt.Although usual band gap reference can produce VDD and the metastable reference voltage of temperature, its limitation is that it can only produce fixing reference voltage.Obviously, the restriction for circuit designers of fixing reference voltage is very large, particularly when power consumption requirements and core voltage more and more lower, want to overcome the problems referred to above and restriction, must improve to some extent to the structure of reference source.The reference voltage that common band-gap reference produces is 1.25V(normal temperature), close to the energy gap of silicon, its output can not arbitrarily regulate.In addition, along with chip power voltage constantly reduces, the 1.25V of usual band gap reference exports the demand that cannot meet design.
Utility model content
The technical matters that the utility model mainly solves is to provide a kind of zero-temperature coefficient adjustable voltage reference source, and wherein band-gap reference voltage circuit has the adjustable function of output, utilizes the base emitter voltage of bipolar transistor
to be inversely proportional to structure current source circuit with absolute temperature, and to be operated in the difference of base emitter voltage of two bipolar transistors under different electric current
current source circuit is built with PTAT.Obtained the reference voltage of zero-temperature coefficient by the weighting summation of the two electric current in design.
For solving the problems of the technologies described above, the technical scheme that the utility model adopts is: provide a kind of zero-temperature coefficient adjustable voltage reference source, comprising: positive temperature coefficient (PTC) electric current source generating circuit, negative temperature parameter current source generating circuit and adjustable resistance R2; Described positive temperature coefficient (PTC) electric current source generating circuit comprises PMOS transistor M7, M8 and bipolar transistor Q1, Q2; Difference between the base emitter voltage being operated in bipolar transistor Q1, the Q2 under different electric current
with PTAT, utilize current mirroring circuit to obtain the positive temperature coefficient (PTC) current source be made up of PMOS transistor M7, M8 be directly proportional to temperature, PMOS transistor M7, M8 form cascode current source I
1mirror image positive temperature coefficient (PTC) current source; Described negative temperature parameter current source generating circuit comprises PMOS transistor M15, M16 and bipolar transistor Q3; The base emitter voltage of bipolar transistor Q3
be inversely proportional to absolute temperature, utilize current mirroring circuit to obtain the negative temperature parameter current source be made up of PMOS transistor M15, M16 be inversely proportional to temperature, PMOS transistor M15, M16 form cascode current source I
2mirror image negative temperature parameter current source; Current source I
1output by PMOS transistor M8 drain export, current source I
2output drained by PMOS transistor M16 and export, the drain electrode of PMOS transistor M8 and M16 is connected and realizes zero-temperature coefficient reference current I
rEF; Current source I
1with current source I
2with suitable weight
,
be added, make
set up, obtain the current reference with zero-temperature coefficient
; The drain electrode of PMOS transistor M8 and M16 is connected and is connected with one end of adjustable resistance R2, the other end ground connection of adjustable resistance R2.
Preferably, described positive temperature coefficient (PTC) electric current source generating circuit also comprises PMOS transistor M1, M2, M3, M4, nmos pass transistor M5, M6, resistance R1 and positive temperature coefficient (PTC) start-up circuit module STARTUP; Form by PMOS transistor M1, M2, M3, M4 the positive temperature coefficient (PTC) voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M5, M6 form forms automatic biasing, positive temperature coefficient (PTC) start-up circuit module STARTUP accesses the drain electrode end of nmos pass transistor M5; The base stage of bipolar transistor Q1, Q2 forms diode with collector short circuit and the emitter of bipolar transistor Q2 is connected with one end of resistance R1, the other end of resistance R1 is connected with the source electrode of nmos pass transistor M6, the emitter of bipolar transistor Q1 is connected with the source electrode of nmos pass transistor M5, and the source terminal voltage of nmos pass transistor M5, M6 is equal; The grid of PMOS transistor M7, M8 is connected to realize current mirror respectively at the grid of transistor M2, M4; The electric current I of positive temperature coefficient (PTC)
1for
, the current source being made up of cascode structure PMOS transistor M7, M8 is formed; Bipolar transistor Q2 is larger than Q1, the difference of bipolar transistor Q1, Q2 base emitter voltage
there is positive temperature coefficient (PTC):
, wherein K is bipolar transistor Q2 and the ratio of Q1 number of parallel; The voltage at Q1 two ends
equal the voltage at Q2 two ends
with the voltage sum at resistance R1 two ends, namely
, can release:
,
; The electric current flowing through two branch roads of bipolar transistor Q1, Q2 is equal, and the difference of its base-emitter voltage drop drops on resistance R1.
Preferably, described negative temperature parameter current source generating circuit also comprises PMOS transistor M9, M10, M11, M12, nmos pass transistor M13, M14, resistance R3 and negative temperature coefficient start-up circuit module STARTUP; The negative temperature coefficient voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M13, M14 form forms automatic biasing is formed, the drain electrode end of negative temperature coefficient start-up circuit module STARTUP access transistor M13 by PMOS transistor M9, M10, M11, M12; Base stage and the collector short circuit of bipolar transistor Q3 form diode, and the emitter of bipolar transistor Q3 is connected with the source electrode of nmos pass transistor M13; The collector of bipolar transistor Q3 is connected to the ground and is connected with one end of resistance R3, and the R3 other end is connected with the source electrode of nmos pass transistor M14, and the source terminal voltage of nmos pass transistor M13, M14 is equal; The grid of PMOS transistor M15, M16 is connected to realize current mirror with the grid of PMOS transistor M10, M12 respectively; The electric current I of negative temperature coefficient
2for
, the current source being made up of cascode structure PMOS transistor M15, M16 is formed; Bipolar transistor Q3 base emitter voltage
namely the forward voltage of diode has negative temperature coefficient, under normal temperature is
, the electric current flowing through bipolar transistor Q3 and these two branch roads of resistance R3 is equal, that is:
,
.
Preferably, described PMOS transistor M8 is connected as the current source of zero-temperature coefficient with the drain electrode of M16
, positive temperature coefficient (PTC) current source and negative temperature parameter current source are added the current source obtaining zero-temperature coefficient with suitable weight, namely
; The temperature coefficient of the current source of zero-temperature coefficient is zero, that is:
, thus can obtain
; When
time,
; The adjustable voltage reference source of zero-temperature coefficient adds an adjustable resistance R2 by the current source of zero-temperature coefficient and forms, and namely PMOS transistor M8 is connected with the drain electrode of M16 and is connected with one end of resistance R2, the other end ground connection of R2; Zero-temperature coefficient variable voltage source REGV is resistance R2 both end voltage
.
The beneficial effects of the utility model are: the utility model provides a kind of zero-temperature coefficient adjustable voltage reference source circuit, adopt the current-mirror structure of cascade irrelevant to realize output reference voltage and supply voltage, the superposition of the current source of Positive and Negative Coefficient Temperature, to realize the reference source of zero-temperature coefficient, reaches output reference voltage by regulating resistance rail-to-rail.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model zero-temperature coefficient adjustable voltage reference source circuit;
Fig. 2 is the schematic diagram being realized zero-temperature coefficient adjustable reference voltage by the resistance of change adjustable resistance R2.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment of the present utility model is described in detail, to make advantage of the present utility model and feature can be easier to be readily appreciated by one skilled in the art, thus more explicit defining is made to protection domain of the present utility model.
Refer to Fig. 1 and Fig. 2, the utility model embodiment comprises:
A kind of zero-temperature coefficient adjustable voltage reference source, have employed the auto bias circuit irrelevant with supply voltage in circuit design, reference source is mainly through being operated in the difference of the base emitter voltage of two bipolar transistors Q1, Q2 under different electric current
with PTAT, utilize the current mirroring circuit that is made up of nmos pass transistor M2, M4, M7, M8 thus obtain one be directly proportional to temperature form current source by nmos pass transistor M7, M8; The base emitter voltage of bipolar transistor in addition
be inversely proportional to absolute temperature, utilize the current mirroring circuit that is made up of nmos pass transistor M10, M12, M15, M16 thus obtain one be inversely proportional to temperature form current source by nmos pass transistor M15, M16; The weighting summation of both utilizations obtains the reference current source of zero-temperature coefficient, by being connected with adjustable resistance R2 thus obtaining zero-temperature coefficient adjustable voltage reference source, thus solves the limitation that can only produce fixing bandgap voltage reference.
Two had the amount of positive and negative temperature coefficient with suitable weight
,
be added, so result will be shown as zero-temperature coefficient; For the drain current I varying with temperature the contrary PMOS transistor M7 in direction, M8
1with the drain current I of PMOS transistor M15, M16
2, make
set up, so just obtain the current reference with zero-temperature coefficient
; Base stage and the emitter short circuit of bipolar transistor Q3 form diode, its base emitter voltage
namely the forward voltage of diode has negative temperature coefficient; The base stage and the emitter short circuit that are operated in two bipolar transistors Q1, Q2 under unequal electric current form diode, and the difference of its base emitter voltage has positive temperature coefficient (PTC); The voltage with Positive and Negative Coefficient Temperature is exported the electric current I of Positive and Negative Coefficient Temperature by the drain electrode of PMOS transistor M8, M16 by Self-bias Current mirror circuit
1, I
2, the electric current of this Positive and Negative Coefficient Temperature is with suitable weight
,
be connected with adjustable resistance R2 after addition, its output voltage REGV forms the wide output voltage of zero-temperature coefficient, can reach rail-to-rail scope.
Positive temperature coefficient (PTC) electric current source generating circuit comprises PMOS transistor M1, M2, M3, M4, M7, M8, nmos pass transistor M5, M6, bipolar transistor Q1, Q2, resistance R1 and positive temperature coefficient (PTC) start-up circuit module STARTUP; The positive temperature coefficient (PTC) voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M5, M6 form forms automatic biasing is formed, the drain electrode end of positive temperature coefficient (PTC) start-up circuit module STARTUP access transistor M5 by PMOS transistor M1, M2, M3, M4; Positive temperature coefficient (PTC) voltage source circuit forms diode by the base stage of two bipolar transistors Q1, Q2 with collector short circuit and the emitter of bipolar transistor Q2 is connected with one end of resistance R1, the other end of resistance R1 is connected with the source electrode of nmos pass transistor M6, the emitter of bipolar transistor Q1 is connected with the source electrode of nmos pass transistor M5, and the source terminal voltage of transistor M5, M6 is equal; The electric current of positive temperature coefficient (PTC)
for
, the current source being made up of cascode structure PMOS transistor M7, M8 is formed, and the grid of PMOS transistor M7, M8 is connected to realize current mirror respectively at the grid of transistor M2, M4; Bipolar transistor Q2 is larger than Q1, the difference of bipolar transistor Q1, Q2 base emitter voltage
there is positive temperature coefficient (PTC):
, wherein K is bipolar transistor Q2 and the ratio of Q1 number of parallel; The voltage at Q1 two ends
equal the voltage at Q2 two ends
with the voltage sum at resistance R1 two ends, namely
, can release:
,
; The electric current flowing through two branch roads of bipolar transistor Q1, Q2 is equal, and the difference of its base-emitter voltage drop drops on resistance R1.
Negative temperature parameter current source generating circuit comprises PMOS transistor M9, M10, M11, M12, M15, M16, nmos pass transistor M13, M14, bipolar transistor Q3, resistance R3 and negative temperature coefficient start-up circuit module STARTUP; The negative temperature coefficient voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M13, M14 form forms automatic biasing is formed, the drain electrode end of negative temperature coefficient start-up circuit module STARTUP access transistor M13 by PMOS transistor M9, M10, M11, M12; Negative temperature coefficient voltage source circuit forms diode by the base stage of bipolar transistor Q3 and collector short circuit, and the emitter of bipolar transistor Q3 is connected with the source electrode of nmos pass transistor M13; The collector of bipolar transistor Q3 is connected to the ground and is connected with one end of resistance R3, and the R3 other end is connected with the source electrode of nmos pass transistor M14, and the source terminal voltage of nmos pass transistor M13, M14 is equal; The electric current of negative temperature coefficient
for
, the current source being made up of cascode structure PMOS transistor M15, M16 is formed, and the grid of transistor M15, M16 is connected to realize current mirror respectively at the grid of transistor M10, M12; Bipolar transistor Q3 base emitter voltage
namely the forward voltage of diode has negative temperature coefficient, under normal temperature is
, the electric current flowing through bipolar transistor Q3 and these two branch roads of resistance R3 is equal, that is:
,
.
PMOS transistor M8 is connected as the current source of zero-temperature coefficient with the drain electrode of M16
; In order to obtain the current source of zero-temperature coefficient, the current source of Positive and Negative Coefficient Temperature can be made to be added with suitable weight and to obtain, namely
; The temperature coefficient of current source is made to be zero, that is:
, thus can obtain
.When
time, so
; The adjustable voltage reference source of zero-temperature coefficient adds an adjustable resistance R2 by the current source of zero-temperature coefficient and forms, and namely PMOS transistor M8 is connected with the drain electrode of M16 and is connected with one end of resistance R2, the other end ground connection of R2; So zero-temperature coefficient variable voltage source REGV and resistance R2 both end voltage are
.The utility model provides a kind of zero-temperature coefficient adjustable voltage reference source circuit, adopt the current-mirror structure of cascade irrelevant to realize output reference voltage and supply voltage, the superposition of the current source of Positive and Negative Coefficient Temperature, to realize the reference source of zero-temperature coefficient, reaches output reference voltage by regulating resistance rail-to-rail.
The foregoing is only embodiment of the present utility model; not thereby the scope of the claims of the present utility model is limited; every utilize the utility model instructions and accompanying drawing content to do equivalent structure or equivalent flow process conversion; or be directly or indirectly used in other relevant technical fields, be all in like manner included in scope of patent protection of the present utility model.
Claims (4)
1. a zero-temperature coefficient adjustable voltage reference source, is characterized in that, comprising: positive temperature coefficient (PTC) electric current source generating circuit, negative temperature parameter current source generating circuit and adjustable resistance R2; Described positive temperature coefficient (PTC) electric current source generating circuit comprises PMOS transistor M7, M8 and bipolar transistor Q1, Q2; Difference between the base emitter voltage being operated in bipolar transistor Q1, the Q2 under different electric current
with PTAT, utilize current mirroring circuit to obtain the positive temperature coefficient (PTC) current source be made up of PMOS transistor M7, M8 be directly proportional to temperature, PMOS transistor M7, M8 form cascode current source I
1mirror image positive temperature coefficient (PTC) current source; Described negative temperature parameter current source generating circuit comprises PMOS transistor M15, M16 and bipolar transistor Q3; The base emitter voltage of bipolar transistor Q3
be inversely proportional to absolute temperature, utilize current mirroring circuit to obtain the negative temperature parameter current source be made up of PMOS transistor M15, M16 be inversely proportional to temperature, PMOS transistor M15, M16 form cascode current source I
2mirror image negative temperature parameter current source; Current source I
1output by PMOS transistor M8 drain export, current source I
2output drained by PMOS transistor M16 and export, the drain electrode of PMOS transistor M8 and M16 is connected and realizes zero-temperature coefficient reference current I
rEF; Current source I
1with current source I
2with suitable weight
,
be added, make
set up, obtain the current reference with zero-temperature coefficient
; The drain electrode of PMOS transistor M8 and M16 is connected and is connected with one end of adjustable resistance R2, the other end ground connection of adjustable resistance R2.
2. zero-temperature coefficient adjustable voltage reference source according to claim 1, it is characterized in that: described positive temperature coefficient (PTC) electric current source generating circuit also comprises PMOS transistor M1, M2, M3, M4, nmos pass transistor M5, M6, resistance R1 and positive temperature coefficient (PTC) start-up circuit module STARTUP; Form by PMOS transistor M1, M2, M3, M4 the positive temperature coefficient (PTC) voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M5, M6 form forms automatic biasing, positive temperature coefficient (PTC) start-up circuit module STARTUP accesses the drain electrode end of nmos pass transistor M5; The base stage of bipolar transistor Q1, Q2 forms diode with collector short circuit and the emitter of bipolar transistor Q2 is connected with one end of resistance R1, the other end of resistance R1 is connected with the source electrode of nmos pass transistor M6, the emitter of bipolar transistor Q1 is connected with the source electrode of nmos pass transistor M5, and the source terminal voltage of nmos pass transistor M5, M6 is equal; The grid of PMOS transistor M7, M8 is connected to realize current mirror respectively at the grid of transistor M2, M4; The electric current I of positive temperature coefficient (PTC)
1for
, the current source being made up of cascode structure PMOS transistor M7, M8 is formed; Bipolar transistor Q2 is larger than Q1, the difference of bipolar transistor Q1, Q2 base emitter voltage
there is positive temperature coefficient (PTC):
, wherein K is bipolar transistor Q2 and the ratio of Q1 number of parallel; The voltage at Q1 two ends
equal the voltage at Q2 two ends
with the voltage sum at resistance R1 two ends, namely
, can release:
,
; The electric current flowing through two branch roads of bipolar transistor Q1, Q2 is equal, and the difference of its base-emitter voltage drop drops on resistance R1.
3. zero-temperature coefficient adjustable voltage reference source according to claim 2, it is characterized in that: described negative temperature parameter current source generating circuit also comprises PMOS transistor M9, M10, M11, M12, nmos pass transistor M13, M14, resistance R3 and negative temperature coefficient start-up circuit module STARTUP; The negative temperature coefficient voltage source circuit that current mirroring circuit that the current mirroring circuit of cascode structure and nmos pass transistor M13, M14 form forms automatic biasing is formed, the drain electrode end of negative temperature coefficient start-up circuit module STARTUP access transistor M13 by PMOS transistor M9, M10, M11, M12; Base stage and the collector short circuit of bipolar transistor Q3 form diode, and the emitter of bipolar transistor Q3 is connected with the source electrode of nmos pass transistor M13; The collector of bipolar transistor Q3 is connected to the ground and is connected with one end of resistance R3, and the R3 other end is connected with the source electrode of nmos pass transistor M14, and the source terminal voltage of nmos pass transistor M13, M14 is equal; The grid of PMOS transistor M15, M16 is connected to realize current mirror with the grid of PMOS transistor M10, M12 respectively; The electric current I of negative temperature coefficient
2for
, the current source being made up of cascode structure PMOS transistor M15, M16 is formed; Bipolar transistor Q3 base emitter voltage
namely the forward voltage of diode has negative temperature coefficient, under normal temperature is
, the electric current flowing through bipolar transistor Q3 and these two branch roads of resistance R3 is equal, that is:
,
.
4. zero-temperature coefficient adjustable voltage reference source according to claim 3, is characterized in that: described PMOS transistor M8 is connected as the current source of zero-temperature coefficient with the drain electrode of M16
, positive temperature coefficient (PTC) current source and negative temperature parameter current source are added the current source obtaining zero-temperature coefficient with suitable weight, namely
; The temperature coefficient of the current source of zero-temperature coefficient is zero, that is:
, thus can obtain
; When
time,
; The adjustable voltage reference source of zero-temperature coefficient adds an adjustable resistance R2 by the current source of zero-temperature coefficient and forms, and namely PMOS transistor M8 is connected with the drain electrode of M16 and is connected with one end of resistance R2, the other end ground connection of R2; Zero-temperature coefficient variable voltage source REGV is resistance R2 both end voltage
.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520925739.3U CN205176717U (en) | 2015-11-19 | 2015-11-19 | Zero adjustable voltage reference source of temperature coefficient |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520925739.3U CN205176717U (en) | 2015-11-19 | 2015-11-19 | Zero adjustable voltage reference source of temperature coefficient |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205176717U true CN205176717U (en) | 2016-04-20 |
Family
ID=55740691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520925739.3U Expired - Fee Related CN205176717U (en) | 2015-11-19 | 2015-11-19 | Zero adjustable voltage reference source of temperature coefficient |
Country Status (1)
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|---|---|
| CN (1) | CN205176717U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105425891A (en) * | 2015-11-19 | 2016-03-23 | 苏州市职业大学 | Zero-temperature coefficient adjustable voltage reference source |
| CN110879627A (en) * | 2019-12-23 | 2020-03-13 | 中国电子科技集团公司第四十九研究所 | Topological structure of band-gap reference voltage with current output capability |
-
2015
- 2015-11-19 CN CN201520925739.3U patent/CN205176717U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105425891A (en) * | 2015-11-19 | 2016-03-23 | 苏州市职业大学 | Zero-temperature coefficient adjustable voltage reference source |
| CN110879627A (en) * | 2019-12-23 | 2020-03-13 | 中国电子科技集团公司第四十九研究所 | Topological structure of band-gap reference voltage with current output capability |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160420 Termination date: 20161119 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |