CN207601665U - A kind of novel band-gap reference source circuit - Google Patents
A kind of novel band-gap reference source circuit Download PDFInfo
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- CN207601665U CN207601665U CN201721365466.7U CN201721365466U CN207601665U CN 207601665 U CN207601665 U CN 207601665U CN 201721365466 U CN201721365466 U CN 201721365466U CN 207601665 U CN207601665 U CN 207601665U
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The utility model discloses a kind of novel band-gap reference source circuit, which includes：Negative feedback amplifier circuit, the first mirror image circuit and the second mirror image circuit；The negative feedback amplifier circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 and operational amplifier；The first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are connect with voltage vdd terminal；The first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are connected to operational amplifier；First mirror image circuit includes：First PNP type triode Q1；The first metal-oxide-semiconductor M1 is connect by first resistor R1 with the first PNP type triode Q1；Second mirror image circuit includes：Second PNP type triode Q2；The second metal-oxide-semiconductor M2 is connect by second resistance R2 with the second PNP type triode Q2；The second metal-oxide-semiconductor M2 is connected to reference voltage output end.Compared with prior art, which can reduce electric current and power consumption, save area, reduce the complexity of technique.
Description
Technical field
The utility model is related to technical field of integrated circuits more particularly to a kind of novel band-gap reference source circuits.
Background technology
A reference source is widely used in various Analogous Integrated Electronic Circuits, digital-to-analogue mixed signal integrated circuit and system integrated chip
In, precision and stability directly determines the precision of whole system.In A/D converter (ADC Analog-to-Digital
Converter), D/A converter (DAC Digital-to-Analog Converter), dynamic memory (DRAM
Dynamic Random Access Memory) etc. in IC design, low-temperature coefficient, high PSRR (PSRR
Power Supply Rejection Ratio) a reference source design it is very crucial.
Fig. 1 is a kind of band-gap reference source circuit figure in the prior art, a kind of existing band-gap reference source circuit as shown in Figure 1
Including by three road image current branches：MOS (Metal Oxide Semiconductor) pipe M1, M2 and M3；In three pole of positive-negative-positive
Pipe Q1 and Q2；Operational amplifier OPA (Operational Amplifier)；Resistance R1 and R2.The drain voltage of metal-oxide-semiconductor M3 is
The output terminal Vref of reference voltage.Wherein the emitter area of Q1 is the n times of (n of Q2>2, generally 8), operational amplifier work
In negative-feedback state, with A, 2 points of B is input, drives the current source of Q1 and Q2, makes A, two point stabilizations of B are in approximately equal voltage
On, empty short status is presented in opamp input terminal.When output voltage changes, fed back to by operational amplifier OPA
The grid of M3, and then the electric current in M3 drain electrodes is controlled, so as to reach the adjustment to reference voltage.There are also circuits to cancel Q3,
But to change the temperature coefficient of R2, output is made to reach stable.
In existing manufacturing process, the running parameter that does not ensure that each electronic component be it is identical,
In the fabrication process can be there are the difference of parameter, and these differences can allow between M1, M2 and M3 in circuit and generate mismatch, match
The more design difficulties of transistor number it is bigger.
As shown in Figure 1, negative-feedback amplification branch that the reference source circuit is made of two branches such as M1, M2, OPA and by
The benchmark output branch composition of M3, R2, Q3 composition, circuit realize complexity, and cost is higher, and power consumption is big.
Invention content
In view of the above-mentioned state of the art, the technical problem to be solved by the utility model is to provide a kind of novel belts
Gap reference source circuit, the circuit can reduce electric current and power consumption, save area, reduce the complexity of technique.
Used technical solution is the utility model in order to achieve the above objectives：
A kind of novel band-gap reference source circuit, including：Negative feedback amplifier circuit, the first mirror image circuit and the second mirror image electricity
Road；
The negative feedback amplifier circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 and operational amplifier；
The first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are connect with voltage vdd terminal；The first metal-oxide-semiconductor M1 and the 2nd MOS
Pipe M2 is connected to operational amplifier；
First mirror image circuit includes：First PNP type triode Q1；
The first metal-oxide-semiconductor M1 is connect by first resistor R1 with the first PNP type triode Q1；
Second mirror image circuit includes：Second PNP type triode Q2；
The second metal-oxide-semiconductor M2 is connect by second resistance R2 with the second PNP type triode Q2；
The second metal-oxide-semiconductor M2 is connected to reference voltage output end.
Further, the voltage vdd terminal is respectively connected to the source electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2；
The output terminal of the operational amplifier is respectively connected to the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2.
Further, the drain electrode of the first metal-oxide-semiconductor M1 is connected to the first PNP type triode Q1's by first resistor R1
Emitter；
The grounded collector of the first PNP type triode Q1.
Further, the drain electrode of the second metal-oxide-semiconductor M2 is connected to the second PNP type triode Q2's by second resistance R2
Emitter；
The grounded collector of the second PNP type triode Q2.
Further, the base stage earth of the first PNP type triode Q1 and the second PNP type triode Q2.
Further, the emitter of the first PNP type triode Q1 is additionally coupled to operation amplifier by first resistor R1
The in-phase input end of device.
Further, the emitter of the second PNP type triode Q2 is additionally coupled to the inverting input of operational amplifier.
Further, the drain electrode of the second metal-oxide-semiconductor M2 is connected to reference voltage output end.
The utility model provides a kind of new band-gap reference source circuit, by the basis of existing reference source circuit
On, branch where original third metal-oxide-semiconductor M3 is cancelled, is simplified by three road current sources as two-way current source, saved area and into
This, while decrease power consumption.Second is set between the tie point of the input terminal of the second metal-oxide-semiconductor M2 and operational amplifier OPA
Resistance R2 is adjusted, reference voltage output end is caused to become the base with zero-temperature coefficient by adjusting the ratio between two resistance
Quasi- voltage, avoids third metal-oxide-semiconductor M3 and the problem of mismatch occur in M1, M2, improves the precision of output reference voltage.
Description of the drawings
Fig. 1 is a kind of band-gap reference source circuit figure in the prior art；
Fig. 2 is a kind of novel band-gap reference source circuit figure in the utility model embodiment.
Specific embodiment
It is specific embodiment of the utility model and with reference to attached drawing below, the technical solution of the utility model is made further
Description, but the utility model is not limited to these embodiments.
The utility model embodiment proposes a kind of band-gap reference source circuit of simplification, by by the one of negative feedback amplifier circuit
Road and reference voltage output branch merge, and can simplify traditional benchmark source circuit for two-way current source by three road current sources,
In, the first metal-oxide-semiconductor M1 is connected by the output node of first resistor R1 and the first mirror image circuit branch；Second metal-oxide-semiconductor M2 passes through
The output node of second resistance R2 and the second mirror image circuit branch is connected, which is effectively reduced the electric current and power consumption of circuit,
Area is saved, reduces the complexity of technique.
Fig. 2 is a kind of novel band-gap reference source circuit figure in the utility model embodiment, which includes：Negative-feedback is amplified
Circuit, the first mirror image circuit and the second mirror image circuit；
The negative feedback amplifier circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 and operational amplifier；
The first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are connect with voltage vdd terminal；The first metal-oxide-semiconductor M1 and the 2nd MOS
Pipe M2 is connected to operational amplifier；
First mirror image circuit includes：First PNP type triode Q1；
The first metal-oxide-semiconductor M1 is connect by first resistor R1 with the first PNP type triode Q1；
Second mirror image circuit includes：Second PNP type triode Q2；
The second metal-oxide-semiconductor M2 is connect by second resistance R2 with the second PNP type triode Q2；
The second metal-oxide-semiconductor M2 is connected to reference voltage output end.
In the utility model embodiment, the voltage vdd terminal is respectively connected to the first metal-oxide-semiconductor M1's and the second metal-oxide-semiconductor M2
Source electrode；
The output terminal of the operational amplifier is respectively connected to the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2.
In the utility model embodiment, the drain electrode of the first metal-oxide-semiconductor M1 is connected to the first positive-negative-positive by first resistor R1
The emitter of triode Q1；
The grounded collector of the first PNP type triode Q1.
In the utility model embodiment, the drain electrode of the second metal-oxide-semiconductor M2 is connected to the second positive-negative-positive by second resistance R2
The emitter of triode Q2；
The grounded collector of the second PNP type triode Q2
The emitter area of the first PNP type triode Q1 is the n times of (n of the second PNP type triode Q2>2).
In the utility model embodiment, the base stage of the first PNP type triode Q1 and the second PNP type triode Q2 are in parallel
Ground connection.
In the utility model embodiment, the emitter of the first PNP type triode Q1 is also connected with by first resistor R1
To the in-phase input end of operational amplifier.
In the utility model embodiment, the emitter of the second PNP type triode Q2 is additionally coupled to operational amplifier
Inverting input.
In the utility model embodiment, the drain electrode of the second metal-oxide-semiconductor M2 is connected to reference voltage output end.
In the utility model embodiment, first resistor R1, second resistance R2 use the resistance of the temperature coefficient of same process,
Reference output voltage precision is high.
In a kind of novel band-gap reference source circuit shown in the utility model embodiment, by the effect of operational amplifier OPA,
The empty short status of formation between two input terminals while it is working, 2 current potential approximately equals of A, B, so, R1 both end voltages are
The voltage difference of the Vbe of two PNP type triodes.
Reference output voltage Vref is equal to the sum of voltage on the current potential of B points and second adjustment resistance R2.
At this point, need to only be matched to the parameter of R1 and R2, it is adjusted by negative feedback amplifier circuit, it is possible to realize base
The high-accuracy stable output of quasi- voltage.
The utility model provides a kind of new band-gap reference source circuit, by the basis of existing reference source circuit
On, branch where original third metal-oxide-semiconductor M3 is cancelled, is simplified by three road current sources as two-way current source, saved area and into
This, while decrease power consumption.Second is set between the tie point of the input terminal of the second metal-oxide-semiconductor M2 and operational amplifier OPA
Resistance R2 is adjusted, reference voltage output end is caused to become the base with zero-temperature coefficient by adjusting the ratio between two resistance
Quasi- voltage, avoids third metal-oxide-semiconductor M3 and the problem of mismatch occur in M1, M2, improves the precision of output reference voltage.
The specific embodiments described herein are merely examples of the spirit of the present invention.The utility model institute
Described specific embodiment can be done various modifications or additions or using similar by belonging to those skilled in the art
Mode substitute, but without departing from the spirit of the present application or beyond the scope of the appended claims.
Claims (1)
1. a kind of novel band-gap reference source circuit, which is characterized in that including：Negative feedback amplifier circuit, the first mirror image circuit and
Two mirror image circuits；
The negative feedback amplifier circuit includes：First metal-oxide-semiconductor M1, the second metal-oxide-semiconductor M2 and operational amplifier；
The first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2 are connect with voltage vdd terminal；The first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2
It is connect with operational amplifier；
First mirror image circuit includes：First PNP type triode Q1；
The first metal-oxide-semiconductor M1 is connect by first resistor R1 with the first PNP type triode Q1；
Second mirror image circuit includes：Second PNP type triode Q2；
The second metal-oxide-semiconductor M2 is connect by second resistance R2 with the second PNP type triode Q2；
The second metal-oxide-semiconductor M2 is connected to reference voltage output end；
The drain electrode of the first metal-oxide-semiconductor M1 is connected to the emitter of the first PNP type triode Q1 by first resistor R1；Described
The grounded collector of one PNP type triode Q1；
The drain electrode of the second metal-oxide-semiconductor M2 is connected to the emitter of the second PNP type triode Q2 by second resistance R2；Described
The grounded collector of two PNP type triode Q2；
The base stage earth of the first PNP type triode Q1 and the second PNP type triode Q2；
The emitter of the first PNP type triode Q1 is additionally coupled to the homophase input of operational amplifier by first resistor R1
End；
The emitter of the second PNP type triode Q2 is additionally coupled to the inverting input of operational amplifier；
The voltage vdd terminal is respectively connected to the source electrode of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2；
The output terminal of the operational amplifier is respectively connected to the grid of the first metal-oxide-semiconductor M1 and the second metal-oxide-semiconductor M2；
The drain electrode of the second metal-oxide-semiconductor M2 is connected to reference voltage output end.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
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| CN2017109462137 | 2017-10-12 | ||
| CN201710946213 | 2017-10-12 |
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| CN207601665U true CN207601665U (en) | 2018-07-10 |
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| CN201710991393.0A Pending CN107678479A (en) | 2017-10-12 | 2017-10-23 | A kind of new band-gap reference source circuit |
| CN201721365466.7U Active CN207601665U (en) | 2017-10-12 | 2017-10-23 | A kind of novel band-gap reference source circuit |
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| CN109613951B (en) * | 2018-11-30 | 2024-01-23 | 宁波德晶元科技有限公司 | Band-gap reference source circuit with self-starting circuit |
| CN114421897B (en) * | 2022-01-24 | 2023-12-08 | 江苏润石科技有限公司 | Circuit for reducing noise of integrated circuit amplifier and noise reduction method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TW201017360A (en) * | 2008-10-28 | 2010-05-01 | Advanced Analog Technology Inc | Bandgap voltage reference circuit |
| CN102609027B (en) * | 2012-03-29 | 2013-10-02 | 北京经纬恒润科技有限公司 | Band-gap reference voltage source circuit |
| CN103365331B (en) * | 2013-07-19 | 2014-12-17 | 天津大学 | Second order compensation reference voltage generating circuit |
| CN104199509B (en) * | 2014-09-17 | 2016-06-08 | 电子科技大学 | A kind of temperature-compensation circuit for band gap reference |
| CN105138063A (en) * | 2015-07-28 | 2015-12-09 | 中国科学院电子学研究所 | Band-gap reference circuit |
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