CN109613951B - Band-gap reference source circuit with self-starting circuit - Google Patents
Band-gap reference source circuit with self-starting circuit Download PDFInfo
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- CN109613951B CN109613951B CN201811459213.5A CN201811459213A CN109613951B CN 109613951 B CN109613951 B CN 109613951B CN 201811459213 A CN201811459213 A CN 201811459213A CN 109613951 B CN109613951 B CN 109613951B
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- reference source
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- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
Abstract
The invention discloses a band gap reference source circuit with a self-starting circuit, which adopts a single-side starting mode and can reduce the current in the starting stage of the circuit compared with the prior art, and the circuit comprises: the starting circuit comprises a signal input circuit, an inverter and a switch circuit; the signal input circuit comprises a third MOS tube M3 and a first current source; the grid electrode of the third MOS tube M3 is connected with the reference voltage output end; the source electrode of the third MOS tube M3 is connected with the collector electrode of the second PNP triode Q2; the switch circuit comprises a fourth MOS tube M4 and a second current source ID; the source electrode of the fourth MOS tube M4 is connected with the emitter electrode of the second PNP triode Q2; the grid electrode of the fourth MOS tube M4 is connected with the drain electrode of the third MOS tube M3 through an inverter. By adopting the circuit, a single-side starting band gap reference source circuit can be realized, and the current of the circuit in the starting stage of the circuit is reduced.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a band gap reference source circuit with a self-starting circuit.
Background
The reference source is widely applied to various analog integrated circuits, digital-analog mixed signal integrated circuits and system integrated chips, and the precision and stability of the reference source directly determine the precision of the whole system.
In the prior art, the starting reference source circuits are all started by a double-sided starting mode, for example, fig. 1; fig. 1 is a circuit diagram of a self-starting bandgap reference source in the prior art, wherein the circuit diagram of the existing self-starting bandgap reference source shown in fig. 1 comprises a reference source circuit and an automatic starting circuit, the self-starting circuit comprises an MN1MOS tube, an MN2MOS tube and an MP3MOS tube, wherein the source electrode and the power supply of the MP3MOS tube are connected, the grid electrode and the drain electrode of the MP3MOS tube are both connected with the grid electrode of the MN1MOS tube and the drain electrode of the MN2MOS tube, the source electrode of the MN1MOS tube is connected with the collector electrode of a third tube Q2 in the reference source circuit and is grounded, the grid electrode of the MN2MOS tube is connected with the reference output voltage of the reference source circuit, and the drain electrode of the MN1MOS is connected with the grid electrode of the reference source circuit MP2MOS tube and the output end of the amplifier OPA.
In the self-starting band gap reference source circuit, a circuit in a double-side starting mode is adopted, and the current in the circuit in the stage of the circuit is larger, so that the power consumption is larger.
In view of the foregoing, it is desirable to design a bandgap reference source circuit with a self-starting circuit that has less current and less power consumption during the start-up phase of the circuit.
Disclosure of Invention
Aiming at the current state of the prior art, the technical problem to be solved by the invention is to provide a single-side started band-gap reference source circuit with a starting circuit, which can reduce the current and power consumption of the circuit in the starting stage of the circuit.
The technical scheme adopted for achieving the purpose is as follows:
the band gap reference source circuit with the self-starting circuit comprises a band gap reference source circuit and a starting circuit, wherein the band gap reference source circuit comprises: the negative feedback amplifying circuit, the first mirror image circuit and the second mirror image circuit; the negative feedback amplifying circuit includes: the first MOS tube M1, the second MOS tube M2 and the operational amplifier; the first mirror circuit includes: a first PNP transistor Q1; the second mirror circuit includes: a second PNP transistor Q2; the first MOS tube M1 is connected with the first PNP triode Q1 through a first resistor R1; the second MOS tube M2 is connected with a second PNP triode Q2 through a second resistor R2; the drain electrode of the second MOS tube M2 is connected to the reference voltage output end; the single-side starting circuit comprises a signal input circuit, an inverting circuit and a switching circuit;
the signal input circuit comprises a third MOS tube M3 and a first current source;
the drain electrode of the third MOS tube M3 is connected with a power supply through a first current source;
the grid electrode of the third MOS tube M3 is connected with the reference voltage output end;
the source electrode of the third MOS tube M3 is connected with the collector electrode of the second PNP triode Q2;
the switching circuit comprises a fourth MOS tube M4 and a second current source;
the inverting circuit includes an inverter;
the drain electrode of the fourth MOS tube M4 is connected with a power supply through a second current source;
the source electrode of the fourth MOS tube M4 is connected with the emitter electrode of the second PNP triode Q2 and one end of the second resistor R2;
the grid electrode of the fourth MOS tube M4 is connected with the drain electrode of the third MOS tube M3 through an inverter.
Further, the method comprises the steps of,
the third MOS tube M3 is an N-channel MOS tube;
further, the method comprises the steps of,
the fourth MOS tube M4 is a P-channel MOS tube.
The invention provides a novel band gap reference source circuit with a self-starting circuit, which adopts a single-side starting band-starting reference source circuit, starts the band gap reference source circuit from a point C, and after the band gap reference source circuit is started, the self-starting circuit is automatically turned off after the voltage output by the reference voltage output end of the band gap reference source circuit is stabilized at a preset voltage value.
Drawings
FIG. 1 is a circuit diagram of a bandgap reference source with a self-starting circuit in the prior art;
fig. 2 is a circuit diagram of a bandgap reference source with a self-starting circuit in an embodiment of the invention.
Detailed Description
The following are specific embodiments of the present invention and the technical solutions of the present invention will be further described with reference to the accompanying drawings, but the present invention is not limited to these embodiments.
The embodiment of the invention provides a single-side-started band-gap reference source circuit with a self-starting circuit, which is started through a fourth MOS tube M4 in a switch circuit in the self-starting circuit and a second PNP triode Q2 emitter connection point in the band-gap reference source circuit, and is automatically turned off when a reference voltage output end of the band-gap reference circuit is stabilized at a preset voltage. The circuit effectively reduces the current and power consumption of the circuit.
Fig. 2 is a band gap reference source circuit with a self-starting circuit provided in this embodiment, including a band gap reference source circuit and a starting circuit, where the band gap reference source circuit includes: the negative feedback amplifying circuit, the first mirror image circuit and the second mirror image circuit; the negative feedback amplifying circuit includes: the first MOS tube M1, the second MOS tube M2 and the operational amplifier; the first mirror circuit includes: a first PNP transistor Q1; the second mirror circuit includes: a second PNP transistor Q2; the first MOS tube M1 is connected with the first PNP triode Q1 through a first resistor R1; the second MOS tube M2 is connected with a second PNP triode Q2 through a second resistor R2; the drain electrode of the second MOS tube M2 is connected to the reference voltage output end; the starting circuit is characterized by comprising a signal input circuit, an inverting circuit and a switching circuit;
the signal input circuit comprises a third MOS tube M3 and a first current source;
the drain electrode of the third MOS tube M3 is connected with a power supply through a first current source;
the grid electrode of the third MOS tube M3 is connected with the reference voltage output end;
the source electrode of the third MOS tube M3 is connected with the collector electrode of the second PNP triode Q2;
the switching circuit comprises a fourth MOS tube M4 and a second current source;
the inverting circuit includes an inverter;
the drain electrode of the fourth MOS tube M4 is connected with a power supply through a second current source;
the source electrode of the fourth MOS tube M4 is connected with the emitter electrode of the second PNP triode Q2 and one end of the second resistor R2;
the grid electrode of the fourth MOS tube M4 is connected with the drain electrode of the third MOS tube M3 through an inverter.
Further, the third MOS tube M3 is an N-channel MOS tube;
further, the fourth MOS transistor M4 is a P-channel MOS transistor.
A circuit starting mode of a single-side starting band gap reference source circuit is adopted.
The potential of the point A is 0 at the beginning of power-on, the potential of the point D is high, the potential of the point B is high, the point B is inverted by an inverter and provides low level for the grid electrode of the fourth MOS tube, the fourth MOS tube M4 starts to start, current is poured into the emitter of the second PNP triode Q2 of the band gap reference source circuit through the drain electrode of the fourth MOS tube M4, the potential of the point C is high at the moment, the potential of the point D is low, the second MOS tube M2 of the band gap reference source circuit starts to work, and the band gap reference source circuit is started.
After the band gap reference source circuit is started, the reference voltage output end outputs stable voltage of 1.2V, at the moment, the grid voltage of the third MOS tube M3 is high level, the third MOS tube M3 is conducted, the drain voltage of the third MOS tube M3 starts to drop, the grid of the fourth MOS tube M4 is high potential, and further, the fourth MOS tube M4 is disconnected, and the self-starting circuit is turned off.
The band-gap reference source circuit with the self-starting circuit provided by the embodiment adopts the unilateral starting band-starting reference source circuit, the band-gap reference source circuit is started from the point C, and after the band-gap reference source circuit is started, the self-starting circuit is automatically turned off after the voltage output by the reference voltage output end of the band-gap reference source circuit is stabilized at a preset voltage value.
The specific embodiments described herein are offered by way of example only to illustrate the spirit of the invention. Those skilled in the art may make various modifications or additions to the described embodiments or substitutions thereof without departing from the spirit of the invention or exceeding the scope of the invention as defined in the accompanying claims.
Claims (3)
1. The band gap reference source circuit with the self-starting circuit comprises a band gap reference source circuit and a starting circuit, wherein the band gap reference source circuit comprises: the negative feedback amplifying circuit, the first mirror image circuit and the second mirror image circuit; the negative feedback amplifying circuit includes: the first MOS tube M1, the second MOS tube M2 and the operational amplifier; the first mirror circuit includes: a first PNP transistor Q1; the second mirror circuit includes: a second PNP transistor Q2; the first MOS tube M1 is connected with the first PNP triode Q1 through a first resistor R1; the second MOS tube M2 is connected with a second PNP triode Q2 through a second resistor R2; the drain electrode of the second MOS tube M2 is connected to the reference voltage output end; the starting circuit is characterized by comprising a signal input circuit, an inverting circuit and a switching circuit;
the signal input circuit comprises a third MOS tube M3 and a first current source;
the drain electrode of the third MOS tube M3 is connected with a power supply through a first current source;
the grid electrode of the third MOS tube M3 is connected with the reference voltage output end;
the source electrode of the third MOS tube M3 is connected with the collector electrode of the second PNP triode Q2;
the switching circuit comprises a fourth MOS tube M4 and a second current source;
the inverting circuit includes an inverter;
the drain electrode of the fourth MOS tube M4 is connected with a power supply through a second current source;
the source electrode of the fourth MOS tube M4 is connected with the emitter electrode of the second PNP triode Q2 and one end of the second resistor R2;
the grid electrode of the fourth MOS tube M4 is connected with the drain electrode of the third MOS tube M3 through an inverter.
2. A bandgap reference source circuit with self-starting circuit according to claim 1, wherein,
the third MOS transistor M3 is an N-channel MOS transistor.
3. A bandgap reference source circuit with self-starting circuit according to claim 1, wherein,
the fourth MOS tube M4 is a P-channel MOS tube.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201811459213.5A CN109613951B (en) | 2018-11-30 | 2018-11-30 | Band-gap reference source circuit with self-starting circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201811459213.5A CN109613951B (en) | 2018-11-30 | 2018-11-30 | Band-gap reference source circuit with self-starting circuit |
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| CN109613951A CN109613951A (en) | 2019-04-12 |
| CN109613951B true CN109613951B (en) | 2024-01-23 |
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Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109917842B (en) * | 2019-04-16 | 2021-11-02 | 卓捷创芯科技（深圳）有限公司 | Clamp feedback starting circuit for eliminating self-biased bandgap reference degeneration metastable state |
| CN110475190B (en) * | 2019-09-02 | 2022-02-22 | 深迪半导体(绍兴)有限公司 | MEMS sensor and starting circuit |
| CN111208859B (en) * | 2020-02-26 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | Band-gap reference source circuit with starting circuit |
| CN111930169B (en) * | 2020-07-27 | 2022-02-11 | 重庆邮电大学 | Negative feedback subsection curvature compensation band gap reference circuit |
| CN116414174B (en) * | 2023-05-25 | 2023-08-22 | 芯动微电子科技(珠海)有限公司 | Band gap reference circuit, starting circuit and starting method thereof |
| CN116896138B (en) * | 2023-09-11 | 2023-11-17 | 苏州贝克微电子股份有限公司 | Low-voltage self-starting circuit structure |
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| US6084388A (en) * | 1998-09-30 | 2000-07-04 | Infineon Technologies Corporation | System and method for low power start-up circuit for bandgap voltage reference |
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| CN104714594A (en) * | 2015-03-27 | 2015-06-17 | 西安华芯半导体有限公司 | Starting circuit for band-gap reference |
| CN106959725A (en) * | 2017-05-20 | 2017-07-18 | 杭州电子科技大学 | A kind of start-up circuit for band gap reference |
| CN107678479A (en) * | 2017-10-12 | 2018-02-09 | 宁波德晶元科技有限公司 | A kind of new band-gap reference source circuit |
| CN209103177U (en) * | 2018-11-30 | 2019-07-12 | 宁波德晶元科技有限公司 | A kind of band-gap reference source circuit with self-start circuit |
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| CN101859161A (en) * | 2010-06-17 | 2010-10-13 | 华为技术有限公司 | Low voltage source bandgap reference voltage circuit and integrated circuit |
| US9667134B2 (en) * | 2015-09-15 | 2017-05-30 | Texas Instruments Deutschland Gmbh | Startup circuit for reference circuits |
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| US6084388A (en) * | 1998-09-30 | 2000-07-04 | Infineon Technologies Corporation | System and method for low power start-up circuit for bandgap voltage reference |
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