CN201681321U - Current source device capable of adjusting current intensity - Google Patents
Current source device capable of adjusting current intensity Download PDFInfo
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- CN201681321U CN201681321U CN2010201831090U CN201020183109U CN201681321U CN 201681321 U CN201681321 U CN 201681321U CN 2010201831090 U CN2010201831090 U CN 2010201831090U CN 201020183109 U CN201020183109 U CN 201020183109U CN 201681321 U CN201681321 U CN 201681321U
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Abstract
The utility model discloses a current source device capable of adjusting current intensity. The device mainly comprises a current supplying/ limiting circuit, a fixed voltage supplying circuit, an MOS transistor, two triodes and an external resistor. The device can realize the intensity adjusting of bias current flowing through the MOS transistor without using an operational amplifier in the conventional current source device to follow the stable fixed voltage; as the use of the operational amplifier is not needed, the components of the current source device is greatly reduced; and at the same time, the power consumption is effectively reduced, the design is simple, and the operation is highly reliable.
Description
Technical field
The utility model relates to a kind of current-source arrangement that is applied to field of power supplies, especially relates to a kind of current-source arrangement of adjustable current size.
Background technology
Power supply design field at the Analogous Integrated Electronic Circuits chip; for the range of application that makes the Analogous Integrated Electronic Circuits chip more extensive; be designed to some current sources of inside changeable through regular meeting; come the size of current of current source is regulated by changing outer meeting resistance according to self needs by the application person of Analogous Integrated Electronic Circuits chip; usually the method that adopts is to produce a stable level with a band-gap reference earlier; utilize an operational amplifier as a follower then; follow this stable level; regulate outer meeting resistance again, just can realize the current source of an adjustable current size.
Fig. 1 has provided the circuit diagram of the current-source arrangement of typical adjustable current size, it comprises that fixed voltage provides circuit VDC, operational amplifier OP1, PMOS transistor P1, nmos pass transistor M1 and outer meeting resistance R1, fixed voltage provides circuit VDC to be connected with the positive input terminal of operational amplifier OP1, for operational amplifier OP1 provides a stable fixed voltage Vref, the negative input end of operational amplifier OP1 is connected with first end of outer meeting resistance R1, the second termination power ground GND of outer meeting resistance R1, the output terminal of operational amplifier OP1 is connected with the grid of nmos pass transistor M1, the source electrode of nmos pass transistor M1 is connected with first end of outer meeting resistance R1, the drain electrode of nmos pass transistor M1 is connected with the source electrode of PMOS transistor P1, the grid of PMOS transistor P1 is connected with the source electrode of PMOS transistor P1, and the drain electrode of PMOS transistor P1 meets supply voltage VDD.In this current-source arrangement, it can be the reference voltage that obtains by the band-gap reference adjustment that fixed voltage provides circuit VDC, it also can be a Zener diode, fixed voltage provides circuit VDC that a metastable fixed level Vref is provided, the effect of following by operational amplifier OP1 and nmos pass transistor M1, make the A voltages at nodes equal fixed voltage Vref, the electric current that flows through outer meeting resistance R1 then is
R wherein
1Be the resistance value of outer meeting resistance R1, thereby can obtain flowing through the electric current I of PMOS transistor P1
2,
So just can be by changing the resistance value R of outer meeting resistance R1
1Realization is to electric current I
2The change of size, can obtain the electric current of needs when needing electric current by the mode pair pmos transistor P1 mirror image of current mirror.Though the size of the resistance value that this current-source arrangement can be by changing outer meeting resistance realizes the adjusting of size of current preferably, but because the application of operational amplifier, make this current-source arrangement have shortcomings such as device is many, power consumption big, design is complicated, caused by the design complexity reliability is low.
Summary of the invention
Technical problem to be solved in the utility model provides the current-source arrangement of the adjustable current size that a kind of device is few, power consumption is little, functional reliability is high.
The utility model solves the problems of the technologies described above the technical scheme that is adopted: a kind of current-source arrangement of adjustable current size, comprise that electric current provides/restricting circuits, fixed voltage provides circuit, the PMOS transistor, first triode, second triode and outer meeting resistance, described electric current provides/and restricting circuits has first link and second link, described fixed voltage provides circuit to have the 3rd link and the 4th link, described electric current provides/restricting circuits first connect the termination supply voltage, described electric current provides/and second link of restricting circuits is connected with the collector of described first triode, the emitter of described first triode provides the 3rd link of circuit to be connected with described fixed voltage, the base stage of described first triode is connected with the collector of described first triode and the base stage of described second triode respectively, the collector of described second triode is connected with described PMOS transistor drain, the transistorized grid of described PMOS is connected with described PMOS transistor drain, the transistorized source electrode of described PMOS connects supply voltage, the emitter of described second triode is connected with first end of described outer meeting resistance, and second end of described outer meeting resistance and described fixed voltage provide the 4th link of circuit all to connect power supply ground.
Described electric current provides/and restricting circuits comprises a resistance, the first termination power voltage of described resistance, second end of described resistance is connected with the collector of described first triode; Or described electric current provide/restricting circuits comprises a Weak current that obtains from other current-source arrangements by the mirror image mode, described Weak current flows to the collector of described first triode.
Described fixed voltage provides circuit to comprise a Zener diode, and the negative electrode of described Zener diode is connected with the emitter of described first triode, and the anode of described Zener diode connects power supply ground; Or described fixed voltage provides circuit to comprise a reference voltage that obtains by the band-gap reference adjustment, and the anode of described reference voltage is connected with the emitter of described first triode, and the negative terminal of described reference voltage connects power supply ground.
Described first triode and described second triode are the triode of NPN type.
Described first triode and described second triode constitute tubular construction, and when described first triode and described second triode all were operated in linear zone, described PMOS transistor was operated in the saturation region.
A kind of current-source arrangement of adjustable current size, comprise that electric current provides/restricting circuits, fixed voltage provides circuit, nmos pass transistor, first triode, second triode and outer meeting resistance, described electric current provides/and restricting circuits has first link and second link, described fixed voltage provides circuit to have the 3rd link and the 4th link, described fixed voltage provides the 3rd of circuit to connect the termination supply voltage, described fixed voltage provides the 4th link of circuit to be connected with the emitter of described first triode, the collector of described first triode provides with described electric current/and first link of restricting circuits is connected, the base stage of described first triode is connected with the collector of described first triode and the base stage of described second triode respectively, the emitter of described second triode is connected with first end of outer meeting resistance, the second termination power voltage of described outer meeting resistance, the collector of described second triode is connected with the drain electrode of described nmos pass transistor, the grid of described nmos pass transistor is connected with the drain electrode of described nmos pass transistor, and the source electrode of described nmos pass transistor and described electric current provide/and second link of restricting circuits all connects power supply ground.
Described fixed voltage provides circuit to comprise a Zener diode, and the negative electrode of described Zener diode connects supply voltage, and the anode of described Zener diode is connected with the emitter of described first triode; Or described fixed voltage provides circuit to comprise a reference voltage that obtains by the band-gap reference adjustment, the positive termination supply voltage of described reference voltage, and the negative terminal of described reference voltage is connected with the emitter of described first triode.
Described electric current provides/and restricting circuits comprises a resistance, and first end of described resistance is connected with the collector of described first triode, the second termination power ground of described resistance; Or described electric current provide/restricting circuits comprises a Weak current that obtains from other current-source arrangements by the mirror image mode, described Weak current flows to power supply ground.
Described first triode and described second triode are the triode of positive-negative-positive.
Described first triode and described second triode constitute tubular construction, and when described first triode and described second triode all were operated in linear zone, described nmos pass transistor was operated in the saturation region.
Compared with prior art, advantage of the present utility model is:
1), current-source arrangement of the present utility model mainly by electric current provide/restricting circuits, fixed voltage provide circuit, MOS transistor, two triodes and outer meeting resistance to form, it need not to use the operational amplifier in the existing current-source arrangement that stable fixed voltage is followed, the size of resistance value that can be by regulating outer meeting resistance realizes the size to the bias current that flows through MOS transistor, and owing to need not to use operational amplifier, significantly reduced the device of current-source arrangement, effectively reduce power consumption simultaneously, and simplicity of design, the functional reliability height.
2), relatively utilize current-source arrangement of the present utility model and existing current-source arrangement to obtain to flow through the bias current of MOS transistor by the resistance value that changes outer meeting resistance, though current-source arrangement of the present utility model has reduction slightly on the precision of bias current, but having with respect to existing current-source arrangement, current-source arrangement of the present utility model can dwindle chip area, save cost, also do not need extra circuit to provide offset signal, need not consider the advantages such as phase compensation of operational amplifier to operational amplifier.
Description of drawings
Fig. 1 is the circuit diagram of the current-source arrangement of existing adjustable current size;
Fig. 2 is the circuit diagram of the current-source arrangement of the utility model specific embodiment one;
Fig. 3 is the bias current I that utilizes current-source arrangement of the present utility model and current-source arrangement shown in Figure 1 to obtain by the resistance value that changes outer meeting resistance
2The simulation result synoptic diagram;
Fig. 4 is the circuit diagram of the current-source arrangement of the utility model specific embodiment two.
Embodiment
Embodiment describes in further detail the utility model below in conjunction with accompanying drawing.
Embodiment one:
A kind of current-source arrangement of adjustable current size, as shown in Figure 2, it comprises that electric current provides/restricting circuits IDC, fixed voltage provides circuit VDC, PMOS transistor P1, the one NPN type triode QN1, the 2nd NPN type triode QN2 and outer meeting resistance R1, electric current provides/and restricting circuits IDC has first link 1 and second link 2, fixed voltage provides circuit VDC to have the 3rd link 3 and the 4th link 4, electric current provides/and first link 1 of restricting circuits IDC meets supply voltage VDD, electric current provides/and second link 2 of restricting circuits IDC is connected with the collector of a NPN type triode QN1, the emitter of the one NPN type triode QN1 provides the 3rd link 3 of circuit VDC to be connected with fixed voltage, the base stage of the one NPN type triode QN1 is connected with the collector of a NPN type triode QN1 and the base stage of the 2nd NPN type triode QN2 respectively, the collector of the 2nd NPN type triode QN2 is connected with the drain electrode of PMOS transistor P1, the grid of PMOS transistor P1 is connected with the drain electrode of PMOS transistor P1, the source electrode of PMOS transistor P1 meets supply voltage VDD, the emitter of the 2nd NPN type triode QN2 is connected with first end of outer meeting resistance R1, and second end of outer meeting resistance R2 and fixed voltage provide the 4th link 4 of circuit VDC all to meet power supply ground GND.
In this specific embodiment, electric current provides/restricting circuits IDC be mainly used in a stable Weak current is provided or is used to limit electric current provide/restricting circuits IDC place branch road works under a less current state and promptly is used to limit the size of electric current, this electric current provides/and restricting circuits IDC can include only a resistance, the first termination power voltage VDD of resistance, second end of resistance is connected with the collector of a NPN type triode QN1, can obtain a Weak current I by this resistance
1Perhaps this electric current provide/restricting circuits IDC can include only a Weak current I who obtains from other current-source arrangements by the mirror image mode
1, this Weak current I
1Flow to the collector of a NPN type triode QN1, at this, the Weak current I that obtains from other current-source arrangements by the mirror image mode
1Can select Weak current I by the breadth length ratio of revising mirror image pipe (MOS transistor)
1Size, the breadth length ratio that generally can adjust the mirror image pipe is chosen the electric current of a maximum, the breadth length ratio of adjusting the mirror image pipe is again chosen the electric current of a minimum, the breadth length ratio of adjusting the mirror image pipe according to the value behind the product evolution of the electric current of maximum and minimum electric current is obtained Weak current again, and this Weak current does not need very accurate.
In this specific embodiment, fixed voltage provides circuit VDC to be mainly used in provides a burning voltage that certain electric current pull-down capability can be arranged, this fixed voltage provides circuit VDC can include only a Zener diode, the negative electrode of Zener diode is connected with the emitter of a NPN type triode QN1, the anode of Zener diode meets power supply ground GND, can obtain a fixed voltage by this Zener diode, with this fixed voltage as reference voltage V 1; Perhaps this fixed voltage provides circuit VDC can include only a reference voltage V 1 that obtains by the band-gap reference adjustment, and the anode of reference voltage V 1 is connected with the emitter of a NPN type triode QN1, and the negative terminal of reference voltage V 1 meets power supply ground GND.At this, the size of reference voltage V 1 can be by calculating the scope of adjustable current in advance, according to the scope of adjustable current in this scope, select one suitable but not the very accurate stable fixed voltage of needs as reference voltage.
In this specific embodiment, the one NPN type triode QN1 and the 2nd NPN type triode QN2 constitute tubular construction, when a NPN type triode QN1 and the 2nd NPN type triode QN2 all are operated in linear zone, PMOS transistor P1 then is operated in the saturation region, and this moment is by changing the resistance value R of outer meeting resistance R1
1Size just can obtain the resistance value R of one and outer meeting resistance R1
1The bias current I that flows through PMOS transistor P1 that is inversely proportional to
2, can obtain needed electric current by pair pmos transistor P1 mirror image then.At this, bias current I
2With other parameters without any relation, only and the resistance value R of outer meeting resistance R1
1Be inversely proportional to, regulate the resistance value R of outer meeting resistance R1 like this
1Can realize regulating bias current I
2
As shown in Figure 2, provide/Weak current I that restricting circuits IDC provides or limits according to electric current
1, the bias current I of the PMOS transistor P1 that flows through
2, and the burning voltage V1 that the fixed voltage of electric current pull-down capability provides circuit VDC to provide is provided, can obtain
Wherein, I
CQ1It is the collector current of a NPN type triode QN1, because a NPN type triode QN1 and the 2nd NPN type triode QN2 are to tubular construction, therefore a NPN type triode QN1 is identical with the DC current gain of the 2nd NPN type triode QN2, and β represents the DC current gain of a NPN type triode QN1 and the 2nd NPN type triode QN2.According to
Can obtain
Again because
With
Wherein, V
BeQ1, V
BeQ2Represent the be junction voltage of a NPN type triode QN1 and the 2nd NPN type triode QN2 respectively, thereby can obtain
Wherein, Δ V
BeThe difference of representing the be junction voltage of the be junction voltage of a NPN type triode QN1 and the 2nd NPN type triode QN2.
When using current-source arrangement of the present utility model, the Weak current I that obtains from other current-source arrangements by the mirror image mode
1Can select Weak current I by the breadth length ratio of revising mirror image pipe (MOS transistor)
1Size, the breadth length ratio that generally can adjust the mirror image pipe is chosen the electric current of a maximum, the breadth length ratio of adjusting the mirror image pipe is again chosen the electric current of a minimum, the breadth length ratio of adjusting the mirror image pipe according to the value behind the product evolution of the electric current of maximum and minimum electric current is obtained Weak current again, can make Weak current I
1With bias current I
2At the identical order of magnitude, the difference DELTA V of the be junction voltage of the be junction voltage of such NPN type triode QN1 and the 2nd NPN type triode QN2
BeJust very little, because the base stage of a NPN type triode QN1 is connected with the base stage of the 2nd NPN type triode QN2, therefore the voltage approximately equal V of A node and B node is just arranged also like this
B=V
A=V1, what so just can be similar to obtains
The bias current I that obtains
2Basically identical as a result with the bias current that obtains by current-source arrangement shown in Figure 1.
Fig. 3 has provided the bias current I that utilizes current-source arrangement of the present utility model and current-source arrangement shown in Figure 1 to obtain to flow through PMOS transistor P1 by the resistance value that changes outer meeting resistance R1
2Simulation result, wherein, the bias current I that the curve representation that inverted triangle is represented current-source arrangement shown in Figure 1 obtains
2Simulation result, the bias current I that the curve representation that positive triangle is represented current-source arrangement of the present utility model obtains
2Simulation result, horizontal ordinate is represented the resistance value of outer meeting resistance among Fig. 3, unit is ohm (ohm), ordinate is represented bias current I
2, unit is A (ampere), and K represents the order of magnitude 1000, and u represents the order of magnitude 10
-6As can be seen from Figure 3, utilize current-source arrangement of the present utility model and current-source arrangement shown in Figure 1 to obtain to flow through the bias current I of PMOS transistor P1 by the resistance value that changes outer meeting resistance R1
2The curve of simulation result almost coincide, be enough to illustrate that current-source arrangement of the present utility model can effectively guarantee the precision of the bias current that obtains.Compare with existing current-source arrangement, though current-source arrangement of the present utility model has reduction slightly on the precision of bias current, but the combination property of current-source arrangement of the present utility model is better than existing current-source arrangement, and simple in structure, device is few, power consumption is little, functional reliability is high.
Embodiment two:
A kind of current-source arrangement of adjustable current size, as shown in Figure 4, it comprises that electric current provides/restricting circuits IDC, fixed voltage provides circuit VDC, nmos pass transistor N1, the first positive-negative-positive triode QP1, the second positive-negative-positive triode QP2 and outer meeting resistance R1, electric current provides/and restricting circuits IDC has first link 1 and second link 2, fixed voltage provides circuit VDC to have the 3rd link 3 and the 4th link 4, fixed voltage provides the 3rd link 3 of circuit VDC to meet supply voltage VDD, fixed voltage provides the 4th link 4 of circuit VDC to be connected with the emitter of the first positive-negative-positive triode QP1, the collector of the first positive-negative-positive triode QP1 provides with electric current/and first link 1 of restricting circuits IDC is connected, the base stage of the first positive-negative-positive triode QP1 is connected with the collector of the first positive-negative-positive triode QP1 and the base stage of the second positive-negative-positive triode QP2 respectively, the emitter of the second positive-negative-positive triode QP2 is connected with first end of outer meeting resistance R1, the second termination power voltage VDD of outer meeting resistance R1, the collector of the second positive-negative-positive triode QP2 is connected with the drain electrode of nmos pass transistor M1, the grid of nmos pass transistor M1 is connected with the drain electrode of nmos pass transistor M1, and source electrode and the electric current of nmos pass transistor M1 provide/and second link 2 of restricting circuits IDC all meets power supply ground GND.
In this specific embodiment, fixed voltage provides circuit VDC to be mainly used in provides a burning voltage that certain electric current pull-down capability can be arranged, this fixed voltage provides circuit VDC can include only a Zener diode, the negative electrode of Zener diode meets supply voltage VDD, the anode of Zener diode is connected with the emitter of the first positive-negative-positive triode QP1, can obtain a fixed voltage by this Zener diode, with this fixed voltage as reference voltage V 1; Perhaps this fixed voltage provides circuit VDD can include only a reference voltage V 1 that obtains by the band-gap reference adjustment, the positive termination supply voltage VDD of reference voltage V 1, and the negative terminal of reference voltage V 1 is connected with the emitter of the first positive-negative-positive triode QP1.At this, the size of reference voltage V 1 can be by calculating the scope of adjustable current in advance, according to the scope of adjustable current in this scope, select one suitable but not the very accurate stable fixed voltage of needs as reference voltage.
In this specific embodiment, electric current provides/restricting circuits IDC be mainly used in a stable Weak current is provided or is used to limit electric current provide/restricting circuits IDC place branch road works under a less current state and promptly is used to limit the size of electric current, this electric current provides/and restricting circuits IDC can include only a resistance, first end of resistance is connected with the collector of the first positive-negative-positive triode QP1, the second termination power ground GND of resistance can obtain a Weak current I by this resistance
1Perhaps this electric current provide/restricting circuits IDC can include only a Weak current I who obtains from other current-source arrangements by the mirror image mode
1, Weak current I
1Flow to power supply ground GND, at this, the Weak current I that obtains from other current-source arrangements by the mirror image mode
1Can select Weak current I by the breadth length ratio of revising mirror image pipe (MOS transistor)
1Size, the breadth length ratio that generally can adjust the mirror image pipe is chosen the electric current of a maximum, the breadth length ratio of adjusting the mirror image pipe is again chosen the electric current of a minimum, the breadth length ratio of adjusting the mirror image pipe according to the value behind the product evolution of the electric current of maximum and minimum electric current is obtained Weak current again, and this Weak current does not need very accurate.
In this specific embodiment, the first positive-negative-positive triode QP1 and the second positive-negative-positive triode QP2 constitute tubular construction, when the first positive-negative-positive triode QP1 and the second positive-negative-positive triode QP2 all are operated in linear zone, nmos pass transistor M1 then is operated in the saturation region, and this moment is by changing the resistance value R of outer meeting resistance R1
1Size just can obtain the resistance value R of one and outer meeting resistance R1
1The bias current I that flows through nmos pass transistor M1 that is inversely proportional to
2, can obtain needed electric current by pair nmos transistor M1 mirror image then.At this, bias current I
2With other parameters without any relation, only and the resistance value R of outer meeting resistance R1
1Be inversely proportional to, regulate the resistance value R of outer meeting resistance R1 like this
1Can realize regulating bias current I
2
Claims (10)
1. the current-source arrangement of an adjustable current size, it is characterized in that comprising that electric current provides/restricting circuits, fixed voltage provides circuit, the PMOS transistor, first triode, second triode and outer meeting resistance, described electric current provides/and restricting circuits has first link and second link, described fixed voltage provides circuit to have the 3rd link and the 4th link, described electric current provides/restricting circuits first connect the termination supply voltage, described electric current provides/and second link of restricting circuits is connected with the collector of described first triode, the emitter of described first triode provides the 3rd link of circuit to be connected with described fixed voltage, the base stage of described first triode is connected with the collector of described first triode and the base stage of described second triode respectively, the collector of described second triode is connected with described PMOS transistor drain, the transistorized grid of described PMOS is connected with described PMOS transistor drain, the transistorized source electrode of described PMOS connects supply voltage, the emitter of described second triode is connected with first end of described outer meeting resistance, and second end of described outer meeting resistance and described fixed voltage provide the 4th link of circuit all to connect power supply ground.
2. the current-source arrangement of a kind of adjustable current size according to claim 1, it is characterized in that described electric current provide/restricting circuits comprises a resistance, the first termination power voltage of described resistance, second end of described resistance is connected with the collector of described first triode; Or described electric current provide/restricting circuits comprises a Weak current that obtains from other current-source arrangements by the mirror image mode, described Weak current flows to the collector of described first triode.
3. the current-source arrangement of a kind of adjustable current size according to claim 1 and 2, it is characterized in that described fixed voltage provides circuit to comprise a Zener diode, the negative electrode of described Zener diode is connected with the emitter of described first triode, and the anode of described Zener diode connects power supply ground; Or described fixed voltage provides circuit to comprise a reference voltage that obtains by the band-gap reference adjustment, and the anode of described reference voltage is connected with the emitter of described first triode, and the negative terminal of described reference voltage connects power supply ground.
4. the current-source arrangement of a kind of adjustable current size according to claim 3 is characterized in that described first triode and described second triode are the triode of NPN type.
5. the current-source arrangement of a kind of adjustable current size according to claim 4, it is characterized in that described first triode and described second triode constitute tubular construction, when described first triode and described second triode all were operated in linear zone, described PMOS transistor was operated in the saturation region.
6. the current-source arrangement of an adjustable current size, it is characterized in that comprising that electric current provides/restricting circuits, fixed voltage provides circuit, nmos pass transistor, first triode, second triode and outer meeting resistance, described electric current provides/and restricting circuits has first link and second link, described fixed voltage provides circuit to have the 3rd link and the 4th link, described fixed voltage provides the 3rd of circuit to connect the termination supply voltage, described fixed voltage provides the 4th link of circuit to be connected with the emitter of described first triode, the collector of described first triode provides with described electric current/and first link of restricting circuits is connected, the base stage of described first triode is connected with the collector of described first triode and the base stage of described second triode respectively, the emitter of described second triode is connected with first end of outer meeting resistance, the second termination power voltage of described outer meeting resistance, the collector of described second triode is connected with the drain electrode of described nmos pass transistor, the grid of described nmos pass transistor is connected with the drain electrode of described nmos pass transistor, and the source electrode of described nmos pass transistor and described electric current provide/and second link of restricting circuits all connects power supply ground.
7. the current-source arrangement of a kind of adjustable current size according to claim 6, it is characterized in that described fixed voltage provides circuit to comprise a Zener diode, the negative electrode of described Zener diode connects supply voltage, and the anode of described Zener diode is connected with the emitter of described first triode; Or described fixed voltage provides circuit to comprise a reference voltage that obtains by the band-gap reference adjustment, the positive termination supply voltage of described reference voltage, and the negative terminal of described reference voltage is connected with the emitter of described first triode.
8. according to the current-source arrangement of claim 6 or 7 described a kind of adjustable current sizes, it is characterized in that described electric current provide/restricting circuits comprises a resistance, first end of described resistance is connected with the collector of described first triode, the second termination power ground of described resistance; Or described electric current provide/restricting circuits comprises a Weak current that obtains from other current-source arrangements by the mirror image mode, described Weak current flows to power supply ground.
9. the current-source arrangement of a kind of adjustable current size according to claim 8 is characterized in that described first triode and described second triode are the triode of positive-negative-positive.
10. the current-source arrangement of a kind of adjustable current size according to claim 9, it is characterized in that described first triode and described second triode constitute tubular construction, when described first triode and described second triode all were operated in linear zone, described nmos pass transistor was operated in the saturation region.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010201831090U CN201681321U (en) | 2010-05-06 | 2010-05-06 | Current source device capable of adjusting current intensity |
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|---|---|---|---|
| CN2010201831090U CN201681321U (en) | 2010-05-06 | 2010-05-06 | Current source device capable of adjusting current intensity |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102710130A (en) * | 2012-05-30 | 2012-10-03 | 西安航天民芯科技有限公司 | High precision AC/DC (alternating current/direct current) converter current-limit circuit |
| CN102891671A (en) * | 2011-07-22 | 2013-01-23 | 吴奕莹 | Gate drive circuit for outputting linear current by metal oxide semiconductor field effect transistor |
| CN102970021A (en) * | 2012-11-29 | 2013-03-13 | 苏州硅智源微电子有限公司 | Current source transistor bias voltage regulator |
-
2010
- 2010-05-06 CN CN2010201831090U patent/CN201681321U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102891671A (en) * | 2011-07-22 | 2013-01-23 | 吴奕莹 | Gate drive circuit for outputting linear current by metal oxide semiconductor field effect transistor |
| CN102891671B (en) * | 2011-07-22 | 2017-04-19 | 深圳民爆光电技术有限公司 | Gate drive circuit for outputting linear current by metal oxide semiconductor field effect transistor |
| CN102710130A (en) * | 2012-05-30 | 2012-10-03 | 西安航天民芯科技有限公司 | High precision AC/DC (alternating current/direct current) converter current-limit circuit |
| CN102710130B (en) * | 2012-05-30 | 2017-10-10 | 西安航天民芯科技有限公司 | A kind of high-precision A C/DC converter current-limiting circuits |
| CN102970021A (en) * | 2012-11-29 | 2013-03-13 | 苏州硅智源微电子有限公司 | Current source transistor bias voltage regulator |
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Granted publication date: 20101222 Effective date of abandoning: 20111214 |