CN108133102B - Modeling method of global process angle model of MOSFET device - Google Patents

Modeling method of global process angle model of MOSFET device Download PDF

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CN108133102B
CN108133102B CN201711392362.XA CN201711392362A CN108133102B CN 108133102 B CN108133102 B CN 108133102B CN 201711392362 A CN201711392362 A CN 201711392362A CN 108133102 B CN108133102 B CN 108133102B
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process angle
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CN108133102A (en
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吕少力
彭兴伟
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Shanghai Huali Microelectronics Corp
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Abstract

The invention discloses a modeling method of a global process angle model of an MOSFET device, which is characterized in that according to the principle of the global process angle model, a global process angle is directly calculated according to parameters, and the 3sigma calculated value of the global process angle is cancelled to adjust the parameters again to serve as the global process angle model. The invention directly calculates and obtains the global process angle according to the parameters and the width W of the device according to the principle of the global process angle modeleffLength L of the deviceeffAnd the correlation accords with the physical significance, and the parameters are adjusted again to be used as a global process angle model by canceling the 3sigma calculated value of the global process angle, so that the process is more concise.

Description

Modeling method of global process angle model of MOSFET device
Technical Field
The invention relates to the technical field of integrated circuit device modeling, in particular to a modeling method of a global process angle model of a MOSFET device.
Background
The MOSFET statistical model includes a total corner (total corner) model, a global corner (global corner) model, and a mismatch (mismatch) model. Wherein the total process angle represents the total process variation (total variation); mismatch represents the mismatch of neighboring devices, i.e., Local variation (Local variation); the global process corner represents a global process fluctuation (global variation).
However, global process fluctuations are currently not directly measurable. The modeling method of the global process angle model commonly used in the industry is to represent the process fluctuation by using the standard deviation (the standard deviation is defined as sigma in the creation of the present invention), and the 3sigma value is usually adopted. Then, in the statistical model, according to:
sigmatotal 2＝sigmamismatch 2+sigmaglobal 2
and calculating to obtain a 3sigma value of a global process corner (global corner). Calculating the 3sigma of the obtained global process fluctuation (global variation) can be used as the size of a global process corner (global corner) to readjust a set of parameters to be used as a global process corner model (global corner model).
Public placeIt is known that the existing modeling method of the global process angle model has the following disadvantages that (1) the formula sigma is only satisfied for devices with four sizes including a large-size device (large device), a short-channel device (short channel device), a narrow-channel device (narrow width device) and a small-size device (small device)total 2＝sigmamismatch 2+sigmaglobal 2For devices with other dimensions, the global process angle is only the fitting value of the model and does not necessarily satisfy the formula sigmatotal 2＝sigmamismatch 2+sigmaglobal 2. (2) The efficiency is low, the process angle parameters need to be adjusted twice, the total process angle (total corner) and the global process angle (global corner) need to be adjusted respectively, and the workload is obviously doubled.
Therefore, aiming at the problems in the prior art, the designer actively studies and improves the process angle model by years of experience in the industry, and the invention provides a modeling method of the global process angle model of the MOSFET device.
Disclosure of Invention
The invention provides a modeling method of a global process angle model of a MOSFET device, aiming at the defects of small applicability, low efficiency and the like of the modeling method of the global process angle model in the prior art.
In order to achieve the purpose of the invention, the invention provides a modeling method of a global process angle model of a MOSFET device, the modeling method of the global process angle model of the MOSFET device directly calculates according to parameters according to the principle of the global process angle model to obtain a global process angle, and the 3sigma calculated value of the global process angle is cancelled to adjust the parameters again to be used as the global process angle model.
Optionally, the parameters are at least gate oxide thickness (toxe), gate width (xw), gate length (xl), turn-on voltage (vth0), mobility (u 0).
Alternatively, for gate oxide thickness (toxe),
toxeglobal＝toxetotal-3toxemismatch/sqrt(Weff×Leff×NF×multi)
optionally, for the gate width (xw),
xwglobal＝xwtotal-3xwmismatch/sqrt(Weff×Leff×NF×multi)
optionally, for a gate length (xl),
xlglobal＝xltotal-3xlmismatch/sqrt(Weff×Leff×NF×multi)
alternatively, for the turn-on voltage (vth0),
vth0global＝vth0total-3vth0mismatch/sqrt(Weff×Leff×NF×multi)
alternatively, for mobility (u0),
u0global＝u0total-3u0mismatch/sqrt(Weff×Leff×NF×multi)
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
In summary, according to the principle of the global process angle model, the invention directly calculates the global process angle according to the parameters and directly calculates the global process angle according to the width W of the deviceeffLength L of the deviceeffAnd the correlation accords with the physical significance, and the parameters are adjusted again to be used as a global process angle model by canceling the 3sigma calculated value of the global process angle, so that the process is more concise.
Drawings
Fig. 1 is a graph showing the results of the modeling method applied to the global process corner model of the MOSFET device.
Detailed Description
The invention will be described in detail with reference to the following embodiments and drawings for illustrating the technical content, structural features, and achieved objects and effects of the invention.
The MOSFET statistical model includes a total corner (total corner) model, a global corner (global corner) model, and a mismatch (mismatch) model. Wherein the total process angle represents the total process variation (total variation); mismatch represents the mismatch of neighboring devices, i.e., Local variation (Local variation); the global process corner represents a global process fluctuation (global variation).
However, global process fluctuations are not directly measurable. The modeling method of the global process angle model commonly used in the industry is to represent the process fluctuation by using the standard deviation (the standard deviation is defined as sigma in the creation of the present invention), and the 3sigma value is usually adopted. Then, in the statistical model, according to:
sigmatotal 2＝sigmamismatch 2+sigmaglobal 2
and calculating to obtain a 3sigma value of a global process corner (global corner). Calculating the 3sigma of the obtained global process fluctuation (global variation) can be used as the size of a global process corner (global corner) to readjust a set of parameters to be used as a global process corner model (global corner model).
As is well known, the existing modeling method of the global process angle model has the following disadvantages that (1) the formula sigma is only satisfied for devices with four sizes including a large-size device (large device), a short-channel device (short channel device), a narrow-channel device (narrow width device) and a small-size device (small device)total 2＝sigmamismatch 2+sigmaglobal 2For devices with other dimensions, the global process angle is only the fitting value of the model and does not necessarily satisfy the formula sigmatotal 2＝sigmamismatch 2+sigmaglobal 2. (2) The efficiency is low, the process angle parameters need to be adjusted twice, the total process angle (total corner) and the global process angle (global corner) need to be adjusted respectively, and the workload is obviously doubled.
In the invention, the modeling method of the global process angle model of the MOSFET device obtains the global process angle according to the principle of the global process angle model and direct parameter calculation, and cancels the 3sigma calculated value of the global process angle to adjust the parameters again to be used as the global process angle model.
As one skilled in the art will readily appreciate, parameters in the mismatch model (mismatch) include, but are not limited to, gate oxide thickness (toxe), gate width (xw), gate length (xl), turn-on voltage (vth0), and mobility (u 0). This corresponds to the mismatch model having 0 as the other parameter in addition to the above parameters. Then the global process angle and the total process angle are the same except for the above parameters. Therefore, in the invention, the method for calculating the parameters of the global process corner includes:
(1) for the gate oxide thickness (toxe),
toxeglobal＝toxetotal-3toxemismatch/sqrt(Weff×Leff×NF×multi)；
(2) for the gate width (xw),
xwglobal＝xwtotal-3xwmismatch/sqrt(Weff×Leff×NF×multi)；
(3) for the gate length (xl),
xlglobal＝xltotal-3xlmismatch/sqrt(Weff×Leff×NF×multi)；
(4) for the turn-on voltage (vth0),
vth0global＝vth0total-3vth0mismatch/sqrt(Weff×Leff×NF×multi)；
(5) with respect to the mobility (u0),
u0global＝u0total-3u0mismatch/sqrt(Weff×Leff×NF×multi)；
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
Obviously, by the above formula, the parameters of the global process corner are directly calculated and obtained, and are directly related to the width W of the deviceeffLength L of the deviceeffAnd the correlation accords with the physical significance, and the parameters are adjusted again to be used as a global process angle model by canceling the 3sigma calculated value of the global process angle, so that the process is more concise.
In order to more intuitively disclose the technical solution of the present invention and to highlight the beneficial effects of the present invention, a modeling method of the global process corner model of the MOSFET device is now described with reference to the specific embodiments. In the detailed description, the values of the parameters of the device and the like are only examples and should not be construed as limiting the technical solution of the present invention.
Referring to fig. 1, fig. 1 is a graph illustrating the result of the modeling method applied to the global process corner model of the MOSFET device. Wherein TT of the first curve 11 is TT Model (Tyfocal Model), FF of the second curve 12 and SS of the third curve 13 are both total process angle models, FF _ global of the fourth curve 14 and SS _ global of the fifth curve 15 are both global process angle models. As can be seen, when W is 9, the mismatch is a smaller proportion, and the mismatch is a larger proportion in the total process angle; and when W is 0.108, the total process angle is approximately equal to the mismatch, which is in line with the physical meaning.
In summary, according to the principle of the global process angle model, the invention directly calculates the global process angle according to the parameters and directly calculates the global process angle according to the width W of the deviceeffLength L of the deviceeffAnd the correlation accords with the physical significance, and the parameters are adjusted again to be used as a global process angle model by canceling the 3sigma calculated value of the global process angle, so that the process is more concise.
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.

Claims (5)

1. The modeling method of the global process angle model of the MOSFET device is characterized in that the modeling method of the global process angle model of the MOSFET device directly calculates according to parameters to obtain a global process angle according to the principle of the global process angle model, and cancels a 3sigma calculated value of the global process angle to adjust the parameters again to be used as the global process angle model;
the parameters are at least gate oxide thickness toxe, gate width xw, gate length xl, starting voltage vth0 and mobility u 0;
with respect to the gate-oxide thickness toxe,
toxeglobal＝toxetotal-3toxemismatch/sqrt(Weff×Leff×NF×multi)
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
2. The method of modeling a global process angle model for a MOSFET device of claim 1, wherein for a gate width xw,
xwglobal＝xwtotal-3xwmismatch/sqrt(Weff×Leff×NF×multi)
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
3. The method of modeling a global process angle model for a MOSFET device of claim 1, wherein the model is applied to a gate length xl,
xlglobal＝xltotal-3xlmismatch/sqrt(Weff×Leff×NF×multi)
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
4. The method of modeling a global process corner model of a MOSFET device as claimed in claim 1 wherein for a turn-on voltage vth0,
vth0global＝vth0total-3vth0mismatch/sqrt(Weff×Leff×NF×multi)
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
5. The method of modeling a global process corner model for a MOSFET device of claim 1, wherein for a mobility u0,
u0global＝u0total-3u0mismatch/sqrt(Weff×Leff×NF×multi)
wherein, WeffIs the width of the device; l iseffIs the length of the device; NF is finger number; multi is the number of devices; the sqrt function is a square root calculation.
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