CN105320207A - A band-gap reference source circuit - Google Patents

A band-gap reference source circuit Download PDF

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Publication number
CN105320207A
CN105320207A CN201410632659.9A CN201410632659A CN105320207A CN 105320207 A CN105320207 A CN 105320207A CN 201410632659 A CN201410632659 A CN 201410632659A CN 105320207 A CN105320207 A CN 105320207A
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China
Prior art keywords
image current
current branch
branch road
transistor
output node
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CN201410632659.9A
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CN105320207B (en
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邵博闻
唐成伟
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Shanghai Huahong Grace Semiconductor Manufacturing Corp
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Abstract

The invention provides a band-gap reference source circuit comprising three mirror image current branches, three resistors, two PNP transistors and an operational amplifier. The emitting electrode area of the second PNP transistor is N times that of the first PNP transistor. The first PNP transistor is not connected with the resistors in parallel. Standard transistors are connected in series between the three mirror image current branches and a power supply voltage. The threshold electricity of the standard transistors is approximate to zero volt, so that the three mirror image current branches can be turned up when the power supply voltage is power on and degeneracy points of zero current of the whole circuit can be eliminated; the single-side bypass resistors are adopted and the first PNP transistor is not connected with the resistors in parallel, so that the first PNP transistor is directly turned on when the corresponding mirror image current branch is turned on and degeneracy points of zero current of audions can be eliminated. The circuit only has one stable working point, does not require additional start circuits, and is in simple in structure.

Description

Band-gap reference source circuit
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit) manufacture, particularly relate to a kind of band-gap reference source circuit.
Background technology
As shown in Figure 1, be existing band-gap reference source circuit figure; Existing band-gap reference source circuit comprises:
Three image current branch roads, are made up of PMOS M101, M102 and M103 respectively, and are respectively used to provide the electric current I be in proportion 101, I 102and I 103.
The emitter area of PNP transistor Q1 and PNP transistor Q102, PNP transistor Q102 is greater than the emitter area of PNP transistor Q101, the base radio pressure of such PNP transistor Q101 and V be101be greater than base radio pressure and the V of PNP transistor Q102 be102; Resistance R101 is connected between the emitter of PNP transistor Q101 and ground, and one end ground connection of resistance R102, the other end connect the emitter of PNP transistor Q102 by resistance R100, resistance R103 is connected between the drain electrode of PMOS M103 and ground.
Two input ends of operational amplifier 101 connect ground connection A and B respectively, node A with B is respectively the drain electrode of PMOS M101 and M102 and is connected with resistance R101 with R102 respectively, and the output terminal of operational amplifier 101 connects the grid of PMOS M101, M102 and M103.The drain electrode of PMOS M103 is the output terminal OUT of reference voltage.
The principle of existing band-gap reference source circuit is:
The base radio pressure of two triodes and the difference of Vbe are Δ VBE=(V be101-V be102);
The electric current flowing through PNP transistor Q102 is I q102=Δ VBE/R100;
The electric current flowing through resistance R102 is I r102=V be101/ R102;
I 103＝I 102＝I Q102+I R102；
Δ VBE is positive temperature coefficient (PTC); V be101for negative temperature coefficient.The ratio of suitable R102 and R100 is set, obtains the electric current of zero-temperature coefficient.
Vout=I103 × R103; Obtain the voltage of zero-temperature coefficient.
In above-mentioned formula, R100 represents the resistance value of resistance R100, and R102 represents the resistance value of resistance R102, and R103 represents the resistance value of resistance R103, I 101, I 102and I 103represent the size of current of corresponding image current branch road respectively, Vout represents the reference voltage of output.
But prior art defect is existence 3 degeneracy points:
First degeneracy point is: integrated circuit zero current, I after also namely now powering on 101, I 102and I 103be all zero, circuit does not work.
Second degeneracy point is: triode zero current, I after also namely now powering on 101, I 102and I 103although all non-vanishing, electric current flows only through resistance R101 and R102, does not have electric current to flow through in PNP pipe Q101 and Q102.
3rd degeneracy point is the stable operating point expected, now can normal output reference voltage.
In prior art, in order to circuit after enabling to power on is directly in the work of the 3rd degeneracy point, need to adopt extra start-up circuit, circuit structure is complicated.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of band-gap reference source circuit, only has the working point that stable, does not need extra start-up circuit.
For solving the problems of the technologies described above, band-gap reference source circuit provided by the invention comprises: three image current branch roads, three resistance, two PNP transistor and operational amplifiers.
The proportional relation of size of current of described three image current branch roads, the emitter area of the second PNP transistor is N times of the emitter area of the first PNP transistor, and N is greater than 1.
The emitter of described first PNP transistor is connected with the output node of the first image current branch road, the collector of described first PNP transistor and base stage all ground connection.
The first end of the first resistance is connected with the output node of described second image current branch road, and the second end of described first resistance is connected with the emitter of described second PNP transistor, the collector of described second PNP transistor and base earth.
Between the output node that second resistance is connected to the second image current branch road and ground.
Between the output node that 3rd resistance is connected to the 3rd image current branch road and ground.
The output node of described first image current branch road connects an input end of described operational amplifier, and the output node of described second image current branch road connects another input end of described operational amplifier; The output node of the 3rd image current branch road is as the output terminal of reference voltage.
First bit transistor (nativeMosfet) is in series with between described first image current branch road and supply voltage, second bit transistor is in series with between described second image current branch road and supply voltage, between described 3rd image current branch road and supply voltage, be in series with the 3rd bit transistor, described first bit transistor, described second bit transistor and the grid of described 3rd bit transistor are all connected the output terminal of described operational amplifier; The threshold voltage of described first bit transistor, described second bit transistor and described 3rd bit transistor makes rear described three the image current branch road all conductings of electricity on the supply voltage close to zero.
Further improvement is, described first image current props up route first PMOS composition, and the source electrode of described first PMOS connects and is connected with described first bit transistor, and the drain electrode of described first PMOS is the output node of described first image current branch road; Described second image current props up route second PMOS composition, and the source electrode of described second PMOS connects and is connected with described second bit transistor, and the drain electrode of described second PMOS is the output node of described second image current branch road; Described 3rd image current props up route the 3rd PMOS composition, and the source electrode of described 3rd PMOS connects and is connected with described 3rd bit transistor, and the drain electrode of described 3rd PMOS is the output node of described second image current branch road.
Further improvement is, described first bit transistor, described second bit transistor and described 3rd bit transistor are all one's own department or unit NMOS tube.
The present invention is by this bit transistor of connecting respectively in the supply voltage side of three image current branch roads, cannot closing completely close to zero volt i.e. this bit transistor of one's own department or unit transistor threshold electricity, utilize the characteristic of threshold value electricity close to zero volt of this bit transistor, make three image current branch roads can supply voltage open after all conductings, so the degeneracy point of the integrated circuit zero current existed in prior art can be eliminated; The present invention simultaneously adopts a discord resistor coupled in parallel in monolateral bypass resistance i.e. two PNP transistor, make PNP transistor direct conducting after the image current branch road conducting of correspondence of discord resistor coupled in parallel, so the degeneracy point of the triode zero current existed in prior art can be eliminated; Therefore circuit of the present invention only has a stable working point, do not need extra start-up circuit, circuit structure is simple.
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is further detailed explanation:
Fig. 1 is existing band-gap reference source circuit figure;
Fig. 2 is embodiment of the present invention band-gap reference source circuit figure.
Embodiment
As shown in Figure 2, be embodiment of the present invention band-gap reference source circuit figure, embodiment of the present invention band-gap reference source circuit comprises: three image current branch roads, three resistance R0, R1 and R2, two PNP transistor Q1 and Q2 and operational amplifiers 1;
The proportional relation of size of current of described three image current branch roads, the electric current that three image current branch roads described in the embodiment of the present invention provide is respectively I 1, I 2and I 3.
The emitter area of the second PNP transistor Q2 is N times of the emitter area of the first PNP transistor Q1, and N is greater than 1; This also makes the base emitter voltage V of described first PNP transistor Q1 be1be greater than the base emitter voltage V of described first PNP transistor Q1 be2.
The emitter of described first PNP transistor Q1 is connected with the output node of the first image current branch road and node A, the collector of described first PNP transistor Q1 and base stage all ground connection GND.
The first end of the first resistance R0 is connected with the output node of described second image current branch road and Node B, second end of described first resistance R0 is connected with the emitter of described second PNP transistor Q2, the collector of described second PNP transistor Q2 and base earth GND.
Second resistance R1 is connected between the output node of the second image current branch road and ground GND.
3rd resistance R2 is connected between the output node of the 3rd image current branch road and ground GND.
The output node of described first image current branch road connects an input end of described operational amplifier 1, and the output node of described second image current branch road connects another input end of described operational amplifier 1; The output node of the 3rd image current branch road is as the output terminal OUT of reference voltage.
First bit transistor M4 is in series with between described first image current branch road and supply voltage VDD, second bit transistor M5 is in series with between described second image current branch road and supply voltage VDD, between described 3rd image current branch road and supply voltage VDD, be in series with the 3rd bit transistor M6, described first bit transistor M4, described second bit transistor M5 and the grid of described 3rd bit transistor M6 are all connected the output terminal of described operational amplifier 1; The threshold voltage of described first bit transistor M4, described second bit transistor M5 and described 3rd bit transistor M6 makes described three image current branch road all conductings after described supply voltage VDD powers on close to zero.
Be preferably, described first image current props up route first PMOS M1 and forms, and the source electrode of described first PMOS M1 connects and is connected with described first bit transistor M4, and the drain electrode of described first PMOS M1 is the output node of described first image current branch road; Described second image current props up route second PMOS M2 and forms, and the source electrode of described second PMOS M2 connects and is connected with described second bit transistor M5, and the drain electrode of described second PMOS M2 is the output node of described second image current branch road; Described 3rd image current props up route the 3rd PMOS M3 and forms, and the source electrode of described 3rd PMOS M3 connects and is connected with described 3rd bit transistor M6, and the drain electrode of described 3rd PMOS M3 is the output node of described second image current branch road.
Described first bit transistor M4, described second bit transistor M5 and described 3rd bit transistor M6 are one's own department or unit NMOS tube.
In the embodiment of the present invention, the threshold value electricity of three standard transistor M4, M5 and M6 close to zero volt, so this bit transistor M4, M5 and M6 cannot close completely, like this after supply voltage VDD opens, this bit transistor M4, M5 and M6 can conductings thus make three image current branch road conductings, so can eliminate the degeneracy point of the integrated circuit zero current existed in prior art.
Simultaneously the embodiment of the present invention adopts monolateral bypass resistance, and PNP transistor Q1 gets along well resistor coupled in parallel, and after the first image current branch road conducting, PNP transistor Q1 can direct conducting like this, so can eliminate the degeneracy point of the triode zero current existed in prior art; Therefore embodiment of the present invention circuit only has a stable working point, do not need extra start-up circuit, circuit structure is simple.
Above by specific embodiment to invention has been detailed description, but these are not construed as limiting the invention.Without departing from the principles of the present invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.

Claims (3)

1. a band-gap reference source circuit, is characterized in that, comprising: three image current branch roads, three resistance, two PNP transistor and operational amplifiers;
The proportional relation of size of current of described three image current branch roads, the emitter area of the second PNP transistor is N times of the emitter area of the first PNP transistor, and N is greater than 1;
The emitter of described first PNP transistor is connected with the output node of the first image current branch road, the collector of described first PNP transistor and base stage all ground connection;
The first end of the first resistance is connected with the output node of described second image current branch road, and the second end of described first resistance is connected with the emitter of described second PNP transistor, the collector of described second PNP transistor and base earth;
Between the output node that second resistance is connected to the second image current branch road and ground;
Between the output node that 3rd resistance is connected to the 3rd image current branch road and ground;
The output node of described first image current branch road connects an input end of described operational amplifier, and the output node of described second image current branch road connects another input end of described operational amplifier; The output node of the 3rd image current branch road is as the output terminal of reference voltage;
First bit transistor is in series with between described first image current branch road and supply voltage, second bit transistor is in series with between described second image current branch road and supply voltage, between described 3rd image current branch road and supply voltage, be in series with the 3rd bit transistor, described first bit transistor, described second bit transistor and the grid of described 3rd bit transistor are all connected the output terminal of described operational amplifier; The threshold voltage of described first bit transistor, described second bit transistor and described 3rd bit transistor makes rear described three the image current branch road all conductings of electricity on the supply voltage close to zero.
2. band-gap reference source circuit as claimed in claim 1, it is characterized in that: described first image current props up route first PMOS composition, the source electrode of described first PMOS connects and is connected with described first bit transistor, and the drain electrode of described first PMOS is the output node of described first image current branch road; Described second image current props up route second PMOS composition, and the source electrode of described second PMOS connects and is connected with described second bit transistor, and the drain electrode of described second PMOS is the output node of described second image current branch road; Described 3rd image current props up route the 3rd PMOS composition, and the source electrode of described 3rd PMOS connects and is connected with described 3rd bit transistor, and the drain electrode of described 3rd PMOS is the output node of described second image current branch road.
3. band-gap reference source circuit as claimed in claim 1 or 2, is characterized in that: described first bit transistor, described second bit transistor and described 3rd bit transistor are all one's own department or unit NMOS tube.
CN201410632659.9A 2014-11-11 2014-11-11 Band-gap reference source circuit Active CN105320207B (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107943182A (en) * 2017-11-30 2018-04-20 上海华虹宏力半导体制造有限公司 Band gap reference start-up circuit
CN108287584A (en) * 2018-01-17 2018-07-17 中国科学院微电子研究所 A kind of band-gap reference circuit
CN112015226A (en) * 2020-08-20 2020-12-01 南京物间科技有限公司 High-precision voltage reference source with wide power supply voltage range
CN114688961A (en) * 2022-04-02 2022-07-01 南通四建集团有限公司 Scaffold frame warp detecting system device

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CN101241378A (en) * 2007-02-07 2008-08-13 中国科学院半导体研究所 Output adjustable band-gap reference source circuit
CN101533288A (en) * 2009-04-09 2009-09-16 中国科学院微电子研究所 A closed-loop curvature compensation CMOS band-gap reference voltage source
CN101561689A (en) * 2008-12-04 2009-10-21 西安电子科技大学 Low voltage CMOS current source
CN101853042A (en) * 2010-05-28 2010-10-06 上海宏力半导体制造有限公司 Bandgap reference circuit
CN102541146A (en) * 2010-12-07 2012-07-04 上海华虹Nec电子有限公司 Circuit for band-gap reference source for preventing leakage current of high-voltage metal oxide semiconductor (MOS) from increasing
CN202394144U (en) * 2011-12-27 2012-08-22 东南大学 Low temperature offset CMOS band-gap reference voltage source with index temperature compensation function

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101241378A (en) * 2007-02-07 2008-08-13 中国科学院半导体研究所 Output adjustable band-gap reference source circuit
CN101561689A (en) * 2008-12-04 2009-10-21 西安电子科技大学 Low voltage CMOS current source
CN101533288A (en) * 2009-04-09 2009-09-16 中国科学院微电子研究所 A closed-loop curvature compensation CMOS band-gap reference voltage source
CN101853042A (en) * 2010-05-28 2010-10-06 上海宏力半导体制造有限公司 Bandgap reference circuit
CN102541146A (en) * 2010-12-07 2012-07-04 上海华虹Nec电子有限公司 Circuit for band-gap reference source for preventing leakage current of high-voltage metal oxide semiconductor (MOS) from increasing
CN202394144U (en) * 2011-12-27 2012-08-22 东南大学 Low temperature offset CMOS band-gap reference voltage source with index temperature compensation function

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107943182A (en) * 2017-11-30 2018-04-20 上海华虹宏力半导体制造有限公司 Band gap reference start-up circuit
CN107943182B (en) * 2017-11-30 2019-10-11 上海华虹宏力半导体制造有限公司 Band gap reference start-up circuit
CN108287584A (en) * 2018-01-17 2018-07-17 中国科学院微电子研究所 A kind of band-gap reference circuit
CN112015226A (en) * 2020-08-20 2020-12-01 南京物间科技有限公司 High-precision voltage reference source with wide power supply voltage range
CN112015226B (en) * 2020-08-20 2022-08-12 南京物间科技有限公司 High-precision voltage reference source with wide power supply voltage range
CN114688961A (en) * 2022-04-02 2022-07-01 南通四建集团有限公司 Scaffold frame warp detecting system device
CN114688961B (en) * 2022-04-02 2024-01-26 南通四建集团有限公司 Scaffold deformation detection system device

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