CN108469862B - Low Drift Temperature current source reference circuit - Google Patents
Low Drift Temperature current source reference circuit Download PDFInfo
- Publication number
- CN108469862B CN108469862B CN201810206174.1A CN201810206174A CN108469862B CN 108469862 B CN108469862 B CN 108469862B CN 201810206174 A CN201810206174 A CN 201810206174A CN 108469862 B CN108469862 B CN 108469862B
- Authority
- CN
- China
- Prior art keywords
- circuit
- current
- mirror image
- bias current
- low drift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
Abstract
The present invention provides a kind of Low Drift Temperature current source reference circuit, including current generating circuit, start-up circuit, mirror image circuit and bias current sources, and the bias current sources provide bias current to the start-up circuit and mirror image circuit；The start-up circuit provides enabling signal to the mirror image circuit after receiving the bias current, controls the mirror image circuit starting；The bias current is supplied to the current generating circuit after the mirror image circuit starting；The current generating circuit is after receiving the bias current, transistor identical using material, emitter area is different, poor is asked to the transmitting junction voltage on each transistor, generate Low Drift Temperature electric current, and the Low Drift Temperature electric current is supplied to the mirror image circuit, it is exported by the mirror image circuit mirror image.Temperature drift of the present invention is smaller, circuit is simpler, and chip area is smaller.
Description
Technical field
The invention belongs to integrated circuit fields, and in particular to a kind of Low Drift Temperature current source reference circuit.
Background technique
In field of analog integrated circuit, current source is widely used, it provides bias current for each module, is influenced
The performance of each module of chip.Usually, it is intended that generate a constant electricity unrelated with supply voltage, technique and temperature
Stream.In most applications, required temperature relation is using one of three kinds of forms:
1) and absolute temperature is proportional
2) it is inversely proportional with absolute temperature
3) temperature independent
Temperature independent current source meets the demand of most of Analogous Integrated Electronic Circuits, therefore is widely used.
Obtain a temperature independent current source, it usually needs a temperature independent reference voltage is first generated, by the benchmark
Voltage is added on resistance, generates a temperature independent reference current, then mirror image is used to other modular circuits.Traditionally,
Temperature independent reference voltage is generated using band-gap reference mode.I.e. by a positive temperature coefficient voltage and negative temperature coefficient electricity
Pressure summation, generates a temperature independent bandgap voltage reference.However on the one hand because of positive temperature coefficient voltage and negative temperature
Coefficient voltages and temperature are not stringent once linear relationship, and are affected by technique, cannot in wide temperature range
It cancels out each other, generally also only zero warm coefficient voltages is generated in some temperature spot, if temperature drift is larger without second order compensation.
On the other hand, bandgap voltage reference itself does not have the ability for generating electric current, and a buffer circuit is needed to generate reference current,
Which increases the complexities of circuit, increase chip area and power consumption.
Summary of the invention
The present invention provides a kind of Low Drift Temperature current source reference circuit, with solve at present temperature independent current source temperature drift compared with
The problem of greatly and structure is complicated.
According to a first aspect of the embodiments of the present invention, a kind of Low Drift Temperature current source reference circuit is provided, including electric current generates
Circuit, start-up circuit, mirror image circuit and bias current sources, the bias current sources are provided to the start-up circuit and mirror image circuit
Bias current；The start-up circuit provides enabling signal to the mirror image circuit after receiving the bias current, controls institute
State mirror image circuit starting；The bias current is supplied to the current generating circuit after the mirror image circuit starting；The electricity
Generation circuit is flowed after receiving the bias current, the transistor identical using material, emitter area is different, to each crystalline substance
Transmitting junction voltage on body pipe asks poor, generates Low Drift Temperature electric current, and the Low Drift Temperature electric current is supplied to the mirror image circuit, by
The mirror image circuit mirror image output.
It in an optional implementation manner, further include negative-feedback circuit, the mirror image circuit after actuation will be described inclined
It sets electric current and is supplied to the negative-feedback circuit, the mirror image circuit provides it to described after receiving the Low Drift Temperature electric current
Negative-feedback circuit, and the bias current is supplied to the negative-feedback circuit, the negative-feedback circuit by the bias current sources
The Low Drift Temperature electric current and bias current are fed back into the current generating circuit, and in the process to described in mutation increase
Bias current is released.
In another optional implementation, the current generating circuit includes the first NPN pipe, the 2nd NPN pipe, first
Adjustable resistance, the second adjustable resistance and third adjustable resistance, the collector of the 2nd NPN pipe is for receiving the mirror image circuit
The collector of the bias current provided after starting, the 2nd NPN pipe connect and passes through with the base stage of the first NPN pipe
The third adjustable resistance connects its base stage, and the base stage of the 2nd NPN pipe connects its transmitting by second adjustable resistance
Pole, the emitter ground connection of the 2nd NPN pipe, the emitter of the first NPN pipe are grounded by first adjustable resistance, collection
Electrode is used to the Low Drift Temperature electric current being supplied to the mirror image circuit, and receives the Low Drift Temperature that the negative-feedback circuit is fed back to
Electric current.
In another optional implementation, the first NPN pipe is identical with the material of the 2nd NPN pipe, and the two is sent out
The ratio between emitter area is K:1, and wherein K is any number greater than 1.
In another optional implementation, by the resistance value to second adjustable resistance and third adjustable resistance into
Row is adjusted, and is adjusted with the temperature drift characteristic for generating electric current to the current generating circuit.
In another optional implementation, it is adjusted by the resistance value to first adjustable resistance, to institute
The size for stating current generating circuit generation electric current is adjusted.
In another optional implementation, the mirror image circuit includes the first PNP pipe, the second PNP pipe, the 3rd PNP
Pipe and the 4th PNP pipe, first PNP pipe, the second PNP pipe, third PNP pipe and the 4th PNP pipe emitter be all used to receive
The bias current that the bias current sources provide, base stage are all used to receive the enabling signal that the start-up circuit provides, and described the
The collector of one PNP pipe is used to receive the Low Drift Temperature electric current that the current generating circuit provides and to be transmitted from pole output described low
Temperature drift electric current, the collector of second PNP pipe are used to for the bias current being supplied to the current generating circuit, and described the
The collector of three PNP pipes is used to for the bias current being supplied to the negative-feedback circuit, and the collector of the 4th PNP pipe is used
The Low Drift Temperature electric current is exported in mirror image.
In another optional implementation, the start-up circuit includes the 5th PNP pipe and the 4th resistance, and the described 5th
The emitter of PNP pipe is used to receive the bias current that the bias current sources provide, and collector connects its base stage and by the 4th
Resistance eutral grounding, the base stage of the 5th PNP pipe are used to provide enabling signal to the mirror image circuit.
In another optional implementation, the negative-feedback circuit includes the 3rd NPN pipe and the 6th PNP pipe, described
Low Drift Temperature electric current and the bias current sources of the emitter of 6th PNP pipe for receiving the mirror image circuit output provide
Bias current, grounded collector, base stage connect the collector of the 3rd NPN pipe, and the emitter of the 3rd NPN pipe is grounded,
Collector is used to receive the bias current provided after the mirror image circuit starting, and base stage is used for the Low Drift Temperature electric current and biasing
Electric current is supplied to the current generating circuit.
In another optional implementation, by the resistance value to second adjustable resistance and third adjustable resistance into
Row is adjusted, so that the current generating circuit generates the Low Drift Temperature electric current unrelated without temperature.
The beneficial effects of the present invention are:
1, the generation of traditional benchmark voltage is summed based on positive temperature coefficient voltage and negative temperature coefficient voltage, because of the two system
Several and temperature is not linear relationship, therefore only can generate zero-temperature coefficient voltage in certain point, and temperature drift is larger in wide temperature range.
The VBE voltage for the NPN pipe that reference voltage in the embodiment of the present invention generates emitter area identical based on material, different makes the difference production
Raw, the two temperature coefficient is closer, makes the difference rear wide temperature range closer to zero-temperature coefficient, temperature drift is smaller；Benchmark electricity of the present invention
After pressure generates, reference current is directly generated on resistance, is not required to be further added by buffer circuit, reduces complexity in circuits, reduce
Chip area；
2, the present invention is by increasing start-up circuit, negative-feedback circuit, and is designed to mirror image circuit, can be improved entire
The stability of circuit.
Detailed description of the invention
Fig. 1 is one embodiment circuit block diagram of Low Drift Temperature current source reference circuit of the present invention；
Fig. 2 is one embodiment circuit diagram of Low Drift Temperature current source reference circuit of the present invention；
Fig. 3 is the output electric current temperature drift simulation result schematic diagram of Low Drift Temperature current source reference circuit of the present invention.
Specific embodiment
Technical solution in embodiment in order to enable those skilled in the art to better understand the present invention, and make of the invention real
The above objects, features, and advantages for applying example can be more obvious and easy to understand, with reference to the accompanying drawing to technical side in the embodiment of the present invention
Case is described in further detail.
In the description of the present invention, unless otherwise specified and limited, it should be noted that term " connection " should do broad sense reason
Solution, for example, it may be mechanical connection or electrical connection, the connection being also possible to inside two elements can be directly connected, it can also
Indirectly connected through an intermediary, for the ordinary skill in the art, can understand as the case may be above-mentioned
The concrete meaning of term.
It is one embodiment circuit block diagram of Low Drift Temperature current source reference circuit of the present invention referring to Fig. 1.Low Drift Temperature electricity
Stream source reference circuit may include current generating circuit 110, start-up circuit 120, mirror image circuit 130 and bias current sources 140, institute
It states bias current sources 140 and provides bias current to the start-up circuit 120 and mirror image circuit 130；The start-up circuit 120 is connecing
It receives and provides enabling signal to the mirror image circuit 130 after the bias current, control the mirror image circuit 130 and start；It is described
The bias current is supplied to the current generating circuit 110 after the starting of mirror image circuit 130；The current generating circuit 110
After receiving the bias current, the transistor identical using material, emitter area is different, to the hair on each transistor
It penetrates junction voltage and asks poor, Low Drift Temperature electric current is generated, and the Low Drift Temperature electric current is supplied to the mirror image circuit 130, by the mirror
As 130 mirror image of circuit exports.Wherein, which can be any current source comprising related with temperature but be not in
Any regular relationship (i.e. not with absolute temperature is proportional, inverse relation) current source.Current generating circuit utilizes in the present invention
The transistor that material is identical, emitter area is different asks poor to the emitter junction on each transistor, while generating voltage difference
Low Drift Temperature electric current can directly be generated, it is not necessary to increase buffer circuit to convert voltages into electric current, therefore structure of the invention compares
Simply, and temperature drift can be reduced.In addition, invention increases with the matched start-up circuit of current occuring circuit and mirror image circuit
Source, since bias current can mutate in use, if directly bias current sources connect with current occuring circuit,
Then bias current sources may damage the transistor in current occuring circuit in mutation, and the invention firstly uses starting electricity
Road controls mirror image circuit starting, and received bias current is supplied to current occuring circuit after actuation by mirror image circuit, can
To provide duplicate protection for the steady operation of current occuring circuit.
The Low Drift Temperature current source reference circuit can also include negative-feedback circuit 150, and the mirror image circuit 130 is after actuation
Bias current is supplied to the negative-feedback circuit 150, the mirror image circuit 130 is provided after receiving Low Drift Temperature electric current
To the negative-feedback circuit 150, and the bias current is supplied to the negative-feedback circuit 150 by the bias current sources 140,
The Low Drift Temperature electric current and bias current are fed back to the current generating circuit 110, and mistake herein by the negative-feedback circuit 150
The bias current increased in journey mutation is released.Similarly, bias current can mutate in use, this
Invention can make the bias current increased release in negative-feedback circuit, to guarantee mirror image electricity by increasing negative-feedback circuit
Road can export stable Low Drift Temperature electric current.In addition, the invention firstly uses start-up circuit control mirror image circuit starting, mirror image electricity
Bias current is just supplied to negative-feedback circuit after actuation by road, so that negative-feedback circuit is started to work, can be improved so negative
The stability of feed circuit work.
As seen from the above-described embodiment, the generation of traditional benchmark voltage is based on positive temperature coefficient voltage and negative temperature coefficient voltage
Summation only can generate zero-temperature coefficient voltage, wide temperature in certain point because the two coefficient and temperature are not linear relationships
Temperature drift is larger in range.Reference voltage in the embodiment of the present invention generates the NPN pipe of emitter area identical based on material, different
VBE voltage make the difference generation, the two temperature coefficient is closer, makes the difference rear wide temperature range closer to zero-temperature coefficient, temperature drift is more
It is small；After reference voltage of the present invention generates, reference current is directly generated on resistance, is not required to be further added by buffer circuit, reduces electricity
Road complexity, reduces chip area.
It referring to fig. 2, is one embodiment circuit diagram of Low Drift Temperature current source reference circuit of the present invention.Fig. 2 with it is low shown in Fig. 1
The difference of temperature drift current source reference circuit is that the current generating circuit includes the first NPN pipe N1, the 2nd NPN pipe N2, first
The collector of adjustable resistance R1, the second adjustable resistance R2 and third adjustable resistance R3, the 2nd NPN pipe N2 are described for receiving
The bias current that mirror image circuit 130 provides after starting, the collector and the first NPN pipe N1 of the 2nd NPN pipe N2
Base stage connect and its base stage connected by the third adjustable resistance R3, the base stage of the 2nd NPN pipe N2 passes through described the
Two adjustable resistance R2 connect its emitter, the emitter ground connection of the 2nd NPN pipe N2, the emitter of the first NPN pipe N1
It being grounded by the first adjustable resistance R1, collector is used to the Low Drift Temperature electric current being supplied to the mirror image circuit 130, and
Receive the Low Drift Temperature electric current and bias current that the negative-feedback circuit 150 is fed back to.Wherein, the first NPN pipe N1 and second
The material of NPN pipe N2 is identical, and the ratio between the two emitter area is K:1, and K is any number greater than 1.The present invention passes through to institute
The resistance value for stating the second adjustable resistance R2 and third adjustable resistance R3 is adjusted, and can generate to the current generating circuit 110
The temperature drift characteristic of electric current is adjusted, wherein being adjusted by the resistance value to second adjustable resistance and third adjustable resistance
Section, so that the current generating circuit generates the Low Drift Temperature electric current unrelated without temperature；The present invention passes through to first adjustable electric
The resistance value of resistance R1 is adjusted, and the size that can generate electric current to current generating circuit 110 is adjusted.
The mirror image circuit 130 includes the first PNP pipe P1, the second PNP pipe P2, third PNP pipe P3 and the 4th PNP pipe P4,
The first PNP pipe P1, the second PNP pipe P2, third PNP pipe P3 and the 4th PNP pipe P4 emitter be all used to receive it is described partially
The bias current of the offer of current source 140 is provided, base stage is all used to receive the enabling signal that the start-up circuit 120 provides, and described the
The collector of one PNP pipe P1 is used to receive the Low Drift Temperature electric current that the current generating circuit 110 provides and is transmitted from pole output
The Low Drift Temperature electric current, the collector of the second PNP pipe P2, which is used to for the bias current to be supplied to the electric current, generates electricity
Road 110, the collector of the third PNP pipe P3 are used to for the bias current being supplied to the negative-feedback circuit 150, and described the
The collector of four PNP pipe P4 exports the Low Drift Temperature electric current for mirror image.
The start-up circuit 120 includes the 5th PNP pipe P5 and the 4th resistance R4, and the emitter of the 5th PNP pipe P5 is used
In the bias current for receiving the offer of bias current sources 140, collector connects its base stage and is grounded by the 4th resistance R4, institute
The base stage for stating the 5th PNP pipe P5 is used to provide enabling signal to the mirror image circuit 130.
The negative-feedback circuit includes the 3rd NPN pipe N3 and the 6th PNP pipe P6, and the emitter of the 6th PNP pipe P6 is used
In the bias current for receiving the Low Drift Temperature electric current that the mirror image circuit 130 exports and the offer of the bias current sources 140, current collection
Pole ground connection, base stage connect the collector of the 3rd NPN pipe N3, the emitter ground connection of the 3rd NPN pipe N3, and collector is used for
The bias current provided after the mirror image circuit 130 starts is received, base stage is for mentioning the Low Drift Temperature electric current and bias current
Supply the current generating circuit 110.Wherein, when bias current, which is mutated, to be increased, Low Drift Temperature electric current and bias current are fed back to
Current occuring circuit 110 is constituted negative anti-in the 6th PNP pipe P6, the 3rd NPN pipe N3, the first NPN pipe N1 and the 2nd NPN pipe N2
In current feed circuit, negative-feedback circuit can make the bias current increased release when flowing through the 6th PNP pipe P6, to guarantee low
The stability that temperature drift electric current generates.
The working principle of the present embodiment is:
As shown in Figure 1, after powering on, the 4th PNP pipe P4 and the 4th resistance R4 it is direct on conduct, start-up circuit first starts work
Make, by the common base structure of the first PNP pipe P1, the second PNP pipe P2 and third PNP pipe P3, mirror image circuit is made to work.Starting
Afterwards, all NPN pipe and PNP pipe open work, and the electric current for flowing through the second PNP pipe N2 base stage compares the current collection of the 2nd NPN pipe N2
Electrode current, small two orders of magnitude, therefore N2 base current is ignored herein, in Fig. 2 at B node the 2nd NPN pipe N2 base stage
Voltage are as follows:
VB=VBE2 (1)
The then collector A point voltage of the 2nd NPN pipe N2 are as follows:
VA=VB×(R2+R3)/R2 (2)
The emitter voltage of the first NPN pipe N1 of C point are as follows:
VC=VA-VBE1=VBE2×(R2+R3)/R2-VBE1 (3)
The electric current that convolution (3) then generates on first resistor R1 are as follows:
Wherein VBE1For the emitter BE junction voltage of the first NPN pipe N1, VBE2Electricity is tied for the emitter BE of the 2nd NPN pipe N2
Pressure.
(3) in formula, R2 and R3 are same type resistance, it can be seen that, temperature-coefficient of electrical resistance can cancel out each other from formula.
Temperature derivation is carried out to (4) formula, i.e., temperature derivation is carried out to (1) formula and (2) formula respectively.
Known VBETemperature coefficient be negative, and
That is VBE<(4+m)VT+Eg/q (6)
Then
If (R2+R3)/R2=A > 1, (8)
(5) and (8) formula are substituted into (7) and are obtained:
Because of VBE1Emitter junction area ratio VBE2Greatly, and flow through N2 and N1 electric current it is close, reverse saturation current is close.Then
Flow through N2 emitter unit area current be greater than flow through N1 emitter unit area current.That is: IC2> IC1。
By: VBE=VTln(IC/IS) (10)
I in formula (10)CFor the electric current for flowing through emitter unit area, ISFor reverse saturation current
Then VBE2> VBE1
AV in formula (9)BE2-VBE1> 0
Then A makes there are some value
V in the above formulasTIndicate thermal voltage, Eg indicates that semiconductor energy gap, q indicate that per-unit electronics charge, m indicate constant.
Fig. 3 is the output electric current temperature drift simulation result schematic diagram of Low Drift Temperature current source reference circuit of the present invention.
As seen from the above-described embodiment, the generation of traditional benchmark voltage is based on positive temperature coefficient voltage and negative temperature coefficient voltage
Summation only can generate zero-temperature coefficient voltage, wide temperature in certain point because the two coefficient and temperature are not linear relationships
Temperature drift is larger in range.Reference voltage in the embodiment of the present invention generates the NPN pipe of emitter area identical based on material, different
VBE voltage make the difference generation, the two temperature coefficient is closer, makes the difference rear wide temperature range closer to zero-temperature coefficient, temperature drift is more
It is small；After reference voltage of the present invention generates, reference current is directly generated on resistance, is not required to be further added by buffer circuit, reduces electricity
Road complexity, reduces chip area.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to of the invention its
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the invention, these modifications, purposes or
Person's adaptive change follows general principle of the invention and including the undocumented common knowledge in the art of the present invention
Or conventional techniques.The description and examples are only to be considered as illustrative, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be understood that the present invention is not limited to the precise structure already described above and shown in the accompanying drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is limited only by the attached claims.
Claims (7)
1. a kind of Low Drift Temperature current source reference circuit, which is characterized in that including current generating circuit, start-up circuit, mirror image circuit,
Bias current sources and negative-feedback circuit, the bias current sources provide bias current to the start-up circuit and mirror image circuit；Institute
It states start-up circuit and provides enabling signal to the mirror image circuit after receiving the bias current, control the mirror image circuit and open
It is dynamic；The bias current is supplied to the current generating circuit after the mirror image circuit starting；The current generating circuit exists
After receiving the bias current, the transistor identical using material, emitter area is different, to the transmitting on each transistor
Junction voltage asks poor, Low Drift Temperature electric current is generated, and the Low Drift Temperature electric current is supplied to the mirror image circuit, by the mirror image circuit
Mirror image output；
The bias current is supplied to the negative-feedback circuit after actuation by the mirror image circuit, and the mirror image circuit is receiving
The negative-feedback circuit is provided it to after to the Low Drift Temperature electric current, and the bias current sources provide the bias current
To the negative-feedback circuit, the Low Drift Temperature electric current and bias current are fed back to the electric current and generate electricity by the negative-feedback circuit
Road, and the bias current increased in the process mutation is released；
The current generating circuit can including the first NPN pipe, the 2nd NPN pipe, the first adjustable resistance, the second adjustable resistance and third
Resistance is adjusted, the collector of the 2nd NPN pipe is used to receive the bias current provided after the mirror image circuit starting, described
The collector of 2nd NPN pipe connect with the base stage of the first NPN pipe and connects its base stage by the third adjustable resistance, institute
The base stage for stating the 2nd NPN pipe connects its emitter by second adjustable resistance, and the emitter of the 2nd NPN pipe is grounded,
The emitter of the first NPN pipe is grounded by first adjustable resistance, and collector is for providing the Low Drift Temperature electric current
To the mirror image circuit, and receive the Low Drift Temperature electric current that the negative-feedback circuit is fed back to；
The first NPN pipe is identical with the material of the 2nd NPN pipe, and the ratio between the two emitter area is K:1, and wherein K is greater than 1
Any number.
2. Low Drift Temperature current source reference circuit according to claim 1, which is characterized in that by second adjustable electric
The resistance value of resistance and third adjustable resistance is adjusted, and is adjusted with the temperature drift characteristic for generating electric current to the current generating circuit
Section.
3. Low Drift Temperature current source reference circuit according to claim 1, which is characterized in that by first adjustable electric
The resistance value of resistance is adjusted, and is adjusted with the size for generating electric current to the current generating circuit.
4. Low Drift Temperature current source reference circuit according to claim 1, which is characterized in that the mirror image circuit includes first
PNP pipe, the second PNP pipe, third PNP pipe and the 4th PNP pipe, first PNP pipe, the second PNP pipe, third PNP pipe and the 4th
The emitter of PNP pipe is all used to receive the bias current that the bias current sources provide, and base stage is all used to receive the starting electricity
The enabling signal that road provides, the collector of first PNP pipe are used to receive the Low Drift Temperature electricity that the current generating circuit provides
It flows and is transmitted from pole and export the Low Drift Temperature electric current, the collector of second PNP pipe is for providing the bias current
To the current generating circuit, the collector of the third PNP pipe is used to for the bias current being supplied to the negative-feedback electricity
The collector on road, the 4th PNP pipe exports the Low Drift Temperature electric current for mirror image.
5. Low Drift Temperature current source reference circuit according to claim 1, which is characterized in that the start-up circuit includes the 5th
PNP pipe and the 4th resistance, the emitter of the 5th PNP pipe are used to receive the bias current that the bias current sources provide, collection
Electrode connects its base stage and by the 4th resistance eutral grounding, and the base stage of the 5th PNP pipe is used to open to mirror image circuit offer
Dynamic signal.
6. Low Drift Temperature current source reference circuit according to claim 1, which is characterized in that the negative-feedback circuit includes the
Three NPN pipe and the 6th PNP pipe, the emitter of the 6th PNP pipe are used to receive the Low Drift Temperature electric current of the mirror image circuit output
And the bias current that the bias current sources provide, grounded collector, base stage connect the collector of the 3rd NPN pipe, institute
The emitter ground connection of the 3rd NPN pipe is stated, collector is used to receive the bias current provided after the mirror image circuit starting, and base stage is used
In the Low Drift Temperature electric current and bias current are supplied to the current generating circuit.
7. Low Drift Temperature current source reference circuit according to claim 2, which is characterized in that by second adjustable electric
The resistance value of resistance and third adjustable resistance is adjusted, so that the current generating circuit generates the Low Drift Temperature electricity unrelated without temperature
Stream.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810206174.1A CN108469862B (en) | 2018-03-13 | 2018-03-13 | Low Drift Temperature current source reference circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810206174.1A CN108469862B (en) | 2018-03-13 | 2018-03-13 | Low Drift Temperature current source reference circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108469862A CN108469862A (en) | 2018-08-31 |
| CN108469862B true CN108469862B (en) | 2019-09-03 |
Family
ID=63264395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810206174.1A Active CN108469862B (en) | 2018-03-13 | 2018-03-13 | Low Drift Temperature current source reference circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108469862B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110048675B (en) * | 2019-05-06 | 2023-03-21 | 西安微电子技术研究所 | Circuit for improving input bias current performance of bipolar rail-to-rail operational amplifier |
| JP7292339B2 (en) * | 2021-09-14 | 2023-06-16 | ウィンボンド エレクトロニクス コーポレーション | TEMPERATURE COMPENSATION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME |
| CN115328245A (en) * | 2022-08-09 | 2022-11-11 | 圣邦微电子（北京）股份有限公司 | Bias current generating circuit |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1091138A1 (en) * | 1982-01-21 | 1984-05-07 | Всесоюзный научно-исследовательский и конструкторский институт хроматографии | Programmable temperature controller |
| CN101119100A (en) * | 2006-07-31 | 2008-02-06 | 中国科学院微电子研究所 | High gain wideband amplifier circuit with temperature compensation |
| CN101840240A (en) * | 2010-03-26 | 2010-09-22 | 东莞电子科技大学电子信息工程研究院 | Adjustable multi-value output reference voltage source |
| CN203012572U (en) * | 2013-01-06 | 2013-06-19 | 成都芯源系统有限公司 | Voltage reference source circuit |
| CN104122918A (en) * | 2013-04-26 | 2014-10-29 | 中国科学院深圳先进技术研究院 | Band-gap reference circuit |
-
2018
- 2018-03-13 CN CN201810206174.1A patent/CN108469862B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU1091138A1 (en) * | 1982-01-21 | 1984-05-07 | Всесоюзный научно-исследовательский и конструкторский институт хроматографии | Programmable temperature controller |
| CN101119100A (en) * | 2006-07-31 | 2008-02-06 | 中国科学院微电子研究所 | High gain wideband amplifier circuit with temperature compensation |
| CN101840240A (en) * | 2010-03-26 | 2010-09-22 | 东莞电子科技大学电子信息工程研究院 | Adjustable multi-value output reference voltage source |
| CN203012572U (en) * | 2013-01-06 | 2013-06-19 | 成都芯源系统有限公司 | Voltage reference source circuit |
| CN104122918A (en) * | 2013-04-26 | 2014-10-29 | 中国科学院深圳先进技术研究院 | Band-gap reference circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108469862A (en) | 2018-08-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101840240B (en) | Adjustable multi-value output reference voltage source | |
| TW574782B (en) | Fast start-up low-voltage bandgap voltage reference circuit | |
| TWI282050B (en) | A proportional to absolute temperature voltage circuit | |
| US7170336B2 (en) | Low voltage bandgap reference (BGR) circuit | |
| CN101349928B (en) | Ultra low-voltage sub-bandgap voltage reference generator | |
| TWI294218B (en) | Method and apparatus for generating n-order compensated temperature independent reference voltage | |
| CN108469862B (en) | Low Drift Temperature current source reference circuit | |
| CN107390771B (en) | The Fiducial reference source circuit with gap of various temperature characteristic reference electric current is generated simultaneously | |
| CN106055002B (en) | The band-gap reference circuit of low pressure output | |
| CN105974996B (en) | A kind of reference voltage source | |
| CN210691139U (en) | Sub-band gap compensation reference voltage generation circuit and sub-band gap reference voltage generator | |
| TW200410059A (en) | Modified brokaw cell-based circuit for generating output current that varies linearly with temperature | |
| CN101630176A (en) | Low-voltage complementary metal-oxide-semiconductor transistor (CMOS) band gap reference voltage source | |
| CN103677031B (en) | Method and circuit for providing zero-temperature coefficient voltage and zero-temperature coefficient current | |
| TWI377462B (en) | Low voltage bandgap reference circuit | |
| US6201381B1 (en) | Reference voltage generating circuit with controllable linear temperature coefficient | |
| TW200846863A (en) | Reference voltage generator | |
| CN109725676A (en) | Bandgap reference circuit | |
| CN107066006B (en) | A kind of novel band-gap reference circuit structure | |
| TW201031901A (en) | PTAT sensor and temperature sensing method thereof | |
| TW200839480A (en) | Bandgap voltage and current reference | |
| CN100570527C (en) | Generating circuit from reference voltage | |
| CN109828630A (en) | A kind of temperature independent low-power consumption reference current source | |
| CN109343641A (en) | A kind of high-precision current reference circuit | |
| CN108664068A (en) | A kind of fractional expression band-gap reference circuit applied to low supply voltage |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |