CN104977968B - Band-gap reference circuit with high-order temperature compensation function - Google Patents

Band-gap reference circuit with high-order temperature compensation function Download PDF

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Publication number
CN104977968B
CN104977968B CN201410147047.0A CN201410147047A CN104977968B CN 104977968 B CN104977968 B CN 104977968B CN 201410147047 A CN201410147047 A CN 201410147047A CN 104977968 B CN104977968 B CN 104977968B
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grid
drain electrode
source class
band
gap reference
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CN104977968A (en
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侯立刚
武威
万培元
林平分
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Beijing University of Technology
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Beijing University of Technology
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Abstract

The invention discloses a band-gap reference circuit with a high-order temperature compensation function, and belongs to the technical field of electronic circuits. The band-gap reference circuit specifically comprises a first-order band-gap reference circuit, a high-order temperature compensation circuit and a zero-temperature coefficient current generating circuit. According to the band-gap reference circuit with the high-order temperature compensation function, on the basis of a traditional first-order temperature compensation band-gap reference circuit, the voltage-current characteristic of an MOS transistor working in a subthreshold area is used for generating high-order terms which are in exponential relationship with temperatures, the high-order terms are overlaid on the first-order band-gap reference voltage, accordingly, the band-gap reference voltage with a high-order temperature compensation function is obtained, and a lower temperature coefficient is achieved compared with a traditional band-gap reference. The band-gap reference circuit can be applied to various analogue integrated circuits such as an oscillator and a data converter.

Description

A kind of high-order temperature compensated band-gap reference circuit
Technical field
The invention belongs to integrated circuit fields, particularly to a kind of high-order temperature compensated band-gap reference circuit.
Background technology
Band-gap reference circuit is used for producing temperature independent reference voltage, is the important module in Analogous Integrated Electronic Circuits, It is widely used in the fields such as analog-digital converter (adc), digital to analog converter (dac), low pressure difference linear voltage regulator (ldo).High-performance Band-gap reference circuit be design one of key technology, its precision directly determines the precision of whole system.
The general principle of traditional band-gap reference circuit of single order temperature-compensating is using the thermoelectricity with positive temperature coefficient Pressure vtWith the transistor base-emitter voltage v with negative temperature coefficientbeWeighting summation, thus obtain the base of zero-temperature coefficient Quasi- voltage.Due to thermal voltage vtTemperature coefficient be a fixed value, and vbeTemperature coefficient itself can with temperature change And change, the reference voltage obtaining in this way can only realize single order temperature-compensating.
Content of the invention
In view of this, it is an object of the invention to provide a kind of new high-order temperature compensated band-gap reference circuit, Reduce the temperature coefficient of bandgap voltage reference on the basis of conventional first order temperature-compensating further, meet the application need of higher precision Ask.
For solving the above problems, adopt the technical scheme that
A kind of high-order temperature compensated band-gap reference circuit, including single order band-gap reference circuit, zero-temperature coefficient electrical current produces Raw circuit, and high-order temperature compensation circuit;Described single order band-gap reference circuit is used for producing the band with single order temperature-compensating Gap reference voltage, and the electric current (ptat electric current) with PTAT;Described zero-temperature coefficient electrical current produces circuit and uses There is the zero-temperature coefficient electrical current of single order temperature-compensating in generation;Described high-order temperature compensation circuit utilizes single order band-gap reference electricity Ptat electric current produced by road provides biasing for the transistor mn3 of sub-threshold region, produces circuit institute using zero-temperature coefficient electrical current The zero-temperature coefficient electrical current of the single order temperature-compensating producing provides biasing, the grid of mn3 and mn5 for the transistor mn5 of sub-threshold region Source difference in voltage and temperature have exponent relation, the higher order term as temperature-compensating, are superimposed upon on single order bandgap voltage reference, and then Obtain that there is high-order temperature compensated bandgap voltage reference.
Described single order temperature compensation bandgap reference circuit includes, and pmos manages: mp1, mp2, mp3, operational amplifier: opa1, Resistance: r1, r2, triode: q1, q2, q3;Wherein, the grid of mp1 be opa1 output node, and the grid with mp2 and The grid of mp3 is connected, and the drain electrode of mp1 is connected with the emitter stage of q1, and is connected to the inverting input of opa1, and the source class of mp1 is even Connect supply voltage;The drain electrode of mp2 is connected with one end of r1, and is connected to the in-phase input end of opa1, and the source class of mp2 connects power supply Voltage;The drain electrode of mp3 is connected with one end of r2, obtains the reference voltage (v1) of single order temperature-compensating, and the source class of mp3 connects power supply Voltage;The other end of resistance r1 is connected with the emitter stage of q2;The other end of resistance r2 is connected with the emitter stage of q3;Q1, q2, q3's Base stage and colelctor electrode are connected to ground.
Described zero-temperature coefficient electrical current produces circuit and includes, and pmos manages: mp7, mp8, operational amplifier: opa2, resistance: R3, r4, r5, triode: q4, q5;Wherein, the grid of mp7 is the output node of opa2, and connects the grid of mp8, mp7's Drain electrode is connected with one end of r3, the emitter stage of q4, and is connected to the inverting input of opa2, and the source class of mp7 is connected to supply voltage; The drain electrode of mp8 is connected with one end of r4, one end of r5, and is connected to the in-phase input end of opa2, and the source class of mp8 is connected to power supply electricity Pressure;The another of r3 is connected to ground;The other end of r4 is connected with the emitter stage of q5;The another of r5 is connected to ground;The base stage of q4, q5 and Colelctor electrode is all connected to ground.
Described high-order temperature compensation circuit includes, pmos manage: mp4, mp5, mp6, nmos manage: mn1, mn2, mn3, mn4, mn5、mn6、mn7;Wherein, the grid of mp4 is connected with the grid of mp3, the grid of mp5, the grid and the leakage that drain with mn1 of mp4 Extremely connected, the source class of mp4 is connected to supply voltage;The drain electrode of mp5 is connected with the grid of mn3 and drain electrode, and the source class of mp5 is connected to power supply Voltage;The grid of mp6 is connected with the grid of mp7, and the drain electrode of mp6 is connected with the grid of the grid of mn7 and drain electrode, mn6, mp6's Source class is connected to supply voltage;The source class of mn1 is connected with the grid of the grid of mn2 and drain electrode, mn4;The source class of mn2 is connected to ground;mn3 The drain electrode of source class and mn4, the source class of mn5, the drain electrode of mn6 be connected;The source class of mn4 is connected to ground;The grid of mn5 is connected to single order temperature The reference voltage (v1) that degree compensates, the drain electrode of mn5 is connected to supply voltage;The source class of mn6, mn7 is all connected to ground.Drain electrode from mp5 Output has high-order temperature compensated reference voltage (vref).
The present invention can obtain following beneficial effect:
What the present invention provided has the band-gap reference electricity in single order temperature-compensating for the high-order temperature compensated band-gap reference circuit On the basis of pressure, the higher order term with temperature exponent function relation is produced by high-order temperature compensation circuit, for compensating vbeTemperature coefficient In high order component, 14.82ppm/ DEG C when the single order temperature-compensating of the temperature coefficient of band-gap reference is reduced to high-order temperature After compensation 6.43ppm/ DEG C, therefore more can meet high-precision application demand.
Brief description
The present invention will be further described below in conjunction with the accompanying drawings:
Fig. 1 is the high-order temperature compensated band-gap reference circuit figure of the present invention;
Fig. 2 is the schematic diagram of the operational amplifier used by single order temperature compensation bandgap reference circuit of the present invention;
Fig. 3 is the schematic diagram of the operational amplifier used by zero-temperature coefficient electrical current generation circuit of the present invention;
Fig. 4 is the temperature characterisitic analogous diagram of the single order temperature compensation bandgap reference output voltage of the present invention;
Fig. 5 is the temperature characterisitic analogous diagram of the high-order temperature compensation bandgap reference output voltage of the present invention;
Specific embodiment
Shown embodiment is described in detail below to technical scheme below in conjunction with the accompanying drawings:
A kind of high-order temperature compensated band-gap reference circuit, including single order band-gap reference circuit, zero-temperature coefficient electrical current produces Raw circuit, and high-order temperature compensation circuit;Described single order band-gap reference circuit is used for producing the band with single order temperature-compensating Gap reference voltage, and the electric current (ptat electric current) with PTAT;Described zero-temperature coefficient electrical current produces circuit and uses There is the zero-temperature coefficient electrical current of single order temperature-compensating in generation;Described high-order temperature compensation circuit is by ptat electric current and zero-temperature coefficient Coefficient current mirror image, biasing two respectively is operated in the nmos pipe of sub-threshold region, the gate source voltage (v of this two nmos pipesgs) it Difference is had exponent relation with temperature, and the higher order term as temperature-compensating is superimposed upon on the bandgap voltage reference of first compensation phase, and then To having high-order temperature compensated bandgap voltage reference vref.
As shown in figure 1, the high-order temperature compensated band-gap reference circuit of the present invention is implemented as: single order temperature-compensating band The grid of gap reference circuit: mp1 is the output node of opa1, and the grid of the grid with mp2 and mp3 is connected, the drain electrode of mp1 It is connected with the emitter stage of q1, and is connected to the inverting input of opa1, the source class of mp1 connects supply voltage;The drain electrode of mp2 and r1 One end be connected, and be connected to the in-phase input end of opa1, the source class of mp2 connects supply voltage;The drain electrode of mp3 and one end of r2 It is connected, obtains the reference voltage (v1) of single order temperature-compensating, the source class of mp3 connects supply voltage;The other end of resistance r1 and q2 Emitter stage be connected;The other end of resistance r2 is connected with the emitter stage of q3;The base stage of q1, q2, q3 and colelctor electrode are connected to ground. The grid that zero-temperature coefficient electrical current produces circuit: mp7 is the output node of opa2, and connects the grid of mp8, the drain electrode of mp7 It is connected with one end of r3, the emitter stage of q4, and is connected to the inverting input of opa2, the source class of mp7 is connected to supply voltage;mp8 Drain electrode be connected with one end of r4, one end of r5, and be connected to the in-phase input end of opa2, the source class of mp8 is connected to supply voltage; The another of r3 is connected to ground;The other end of r4 is connected with the emitter stage of q5;The another of r5 is connected to ground;The base stage of q4, q5 and collection Electrode is all connected to ground.The grid of high-order temperature compensation circuit: mp4 is connected with the grid of the grid of mp3, mp5, the drain electrode of mp4 with The grid of mn1 is connected with drain electrode, and the source class of mp4 is connected to supply voltage;The drain electrode of mp5 is connected with the grid of mn3 and drain electrode, mp5 Source class be connected to supply voltage;The grid of mp6 is connected with the grid of mp7, the drain electrode of mp6 and the grid of mn7 and drain, mn6 Grid is connected, and the source class of mp6 is connected to supply voltage;The source class of mn1 is connected with the grid of the grid of mn2 and drain electrode, mn4;Mn2's Source class is connected to ground;The source class of mn3 is connected with the drain electrode of the drain electrode of mn4, the source class of mn5, mn6;The source class of mn4 is connected to ground;Mn5's Grid is connected to the reference voltage (v1) of single order temperature-compensating, and the drain electrode of mn5 is connected to supply voltage;The source class of mn6, mn7 is all connected to Ground.From the drain electrode output of mp5, there is high-order temperature compensated reference voltage (vref).
Single order temperature compensation bandgap reference circuit generation ptat electric current:
i ptat = kt q ln n 1 r 1
In above formula, k is Boltzmann constant, and t is absolute temperature, and q is the quantity of electric charge of electronics, and n1 is triode q2 and three poles The ratio of pipe q1 emitter area, r1 represents the resistance of resistance r1.N1=8 in the present embodiment.
This ptat electric current, by mp3 mirror image, flows through resistance r2 and is converted into ptat voltage, the emitter stage-base stage with triode q3 Voltage veb3Cumulative, obtain the reference voltage v1 of single order temperature-compensating:
v 1 = v eb 3 + ( r 2 r 1 ) kt q ln n 1
veb3It is negative temperature coefficient voltage:
v eb 3 = v g ( t 0 ) + [ v eb ( t 0 ) - v g ( t 0 ) ] ( t t 0 ) - ( γ - α ) kt q ln ( t t 0 )
In above formula, vgIt is the band gap voltage of silicon materials under 0k, t is absolute temperature, normal temperature t0=300k, γ, α are respectively and three The pole pipe base hole mobility temperature coefficient related with collector current, k is Boltzmann constant, and q is the quantity of electric charge of electronics.
veb3Temperature coefficient itself can change with the change of temperature, and the positive temperature coefficient of ptat voltage is one Temperature independent constant, so in conventional first order band-gap reference circuit, veb3The high order component tln (t/t0) of temperature coefficient It is not compensated for.
Similar with the principle of single order temperature compensation bandgap reference circuit, zero-temperature coefficient electrical current produces circuit and adopts depression belt The structure of gap reference circuit, produces the zero-temperature coefficient electrical current i with single order temperature-compensatingzt:
i zt = v eb 4 r 3 + kt q ln n 2 r 4
In above formula, veb4It is the emitter base voltage of triode q4, r3 represents the resistance of resistance r3, and k is Boltzmann Constant, t is absolute temperature, and q is the quantity of electric charge of electronics, and n2 is triode q5 and the ratio of triode q4 emitter area, r4 generation The resistance of table resistance r4.N in the present embodiment2=8.
In high-order temperature compensation circuit, mp4 and mp5 mirror image ptat electric current, provide biasing for mn1 and mn3;mp6、mn7、 The zero-temperature coefficient electrical current i of mn6 mirror image first compensation phasezt, provide biasing for mn5.Mn1, mn3 and mn5 take the larger w/ of identical L, is operated in sub-threshold region.In the present embodiment (w/l)1=(w/l)3=(w/l)5=11/1.
It is operated in the nmos pipe gate source voltage v of sub-threshold regiongsWith drain current idExponent function relation:
v gs = η kt q ln i d i 0
In above formula, η is sub-threshold slope, and k is Boltzmann constant, and t is absolute temperature, and q is the quantity of electric charge of electronics, i0It is The reverse saturation current of nmos pipe.
Ptat electric current and single order zero-temperature coefficient electrical current i are used respectively using large-sized mn3 and mn5ztIt is biased in subthreshold value Area, the difference of their gate source voltage is:
δ = v gs 3 - v gs 5 = η kt q ln a i ptat b i zt
In above formula, η is sub-threshold slope, and k is Boltzmann constant, and t is absolute temperature, and q is the quantity of electric charge of electronics, a table Show mp5 mirror image iptatThe ratio of electric current, b represents mp6 mirror image iztRatio.
By iptatElectric current substitutes into above formula with the relational expression of temperature t, obtains:
δ = η kt q ln t λ
Wherein,
λ = ak ln n 1 bq i zt r 1
Therefore, δ can be as the higher order term of temperature-compensating, for compensating veb3High order component tln (t/ in temperature coefficient t0).
δ is superimposed upon on the reference voltage v1 of single order temperature-compensating, obtains that there is high-order temperature compensated band-gap reference electricity Pressure vref:
v ref = v g ( t 0 ) + [ v eb ( t 0 ) - v g ( t 0 ) + ( r 2 r 1 ) kt 0 q ln n 1 ] ( t t 0 ) + [ δ - ( γ - α ) kt q ln ( t t 0 ) ]
Accompanying drawing 4 is the temperature characterisitic simulation curve of the bandgap voltage reference of conventional first order temperature-compensating, at -40~+120 DEG C In the range of, the temperature coefficient of v1 is 14.82ppm/ DEG C.The band-gap reference circuit that accompanying drawing 5 is high-order temperature compensated shown in accompanying drawing 1 is defeated Go out the temperature characterisitic simulation curve of voltage, in the range of -40~+120 DEG C, vrefTemperature coefficient only have 6.43ppm/ DEG C.

Claims (8)

1. a kind of high-order temperature compensated band-gap reference circuit is it is characterised in that include single order band-gap reference circuit, zero-temperature coefficient system Number current generating circuit, and high-order temperature compensation circuit;Described single order band-gap reference circuit has single order temperature for generation The bandgap voltage reference compensating, and be ptat electric current with the electric current of PTAT;Described zero-temperature coefficient electrical current produces Raw circuit is used for producing the zero-temperature coefficient electrical current with single order temperature-compensating;Described high-order temperature compensation circuit utilizes single order band Ptat electric current produced by gap reference circuit provides biasing for the transistor mn3 of sub-threshold region, is produced using zero-temperature coefficient electrical current The zero-temperature coefficient electrical current of single order temperature-compensating produced by raw circuit is that the transistor mn5 of sub-threshold region provides biasing, mn3 and The difference of the gate source voltage of mn5 and temperature have exponent relation, the higher order term as temperature-compensating, are superimposed upon single order bandgap voltage reference On, and then obtain that there is high-order temperature compensated bandgap voltage reference.
2. high-order temperature compensated band-gap reference circuit according to claim 1 is it is characterised in that described single order band gap base Quasi- circuit includes, and pmos manages: mp1, mp2, mp3, operational amplifier: opa1, resistance: r1, r2, triode: q1, q2, q3;Its In, the grid of mp1 is the output node of opa1, and the grid of the grid with mp2 and mp3 is connected, and the drain electrode of mp1 is sent out with q1's Emitter-base bandgap grading is connected, and is connected to the inverting input of opa1, and the source class of mp1 connects supply voltage;The drain electrode of mp2 and one end phase of r1 Connect, and be connected to the in-phase input end of opa1, the source class of mp2 connects supply voltage;The drain electrode of mp3 is connected with one end of r2, mp3 Source class connect supply voltage;The other end of resistance r1 is connected with the emitter stage of q2;The other end of resistance r2 and the emitter stage of q3 It is connected;The base stage of q1, q2, q3 and colelctor electrode are connected to ground.
3. high-order temperature compensated band-gap reference circuit according to claim 1 is it is characterised in that described zero-temperature coefficient Current generating circuit includes, and pmos manages: mp7, mp8, operational amplifier: opa2, resistance: r3, r4, r5, triode: q4, q5;Its In, the grid of mp7 is the output node of opa2, and connects the grid of mp8, the drain electrode of mp7 and one end of r3, the emitter stage of q4 It is connected, and is connected to the inverting input of opa2, the source class of mp7 is connected to supply voltage;The drain electrode of mp8 and one end of r4, r5 One end is connected, and is connected to the in-phase input end of opa2, and the source class of mp8 is connected to supply voltage;The another of r3 is connected to ground;R4's The other end is connected with the emitter stage of q5;The another of r5 is connected to ground;The base stage of q4, q5 and colelctor electrode are all connected to ground.
4. high-order temperature compensated band-gap reference circuit according to claim 1 is it is characterised in that described high-order temperature is mended Repay circuit to include, pmos manages: mp4, mp5, mp6, nmos manages: mn1, mn2, mn3, mn4, mn5, mn6, mn7;Wherein, the grid of mp4 Pole is connected with the grid of mp3, the grid of mp5, and the drain electrode of mp4 is connected with the grid of mn1 and drain electrode, and the source class of mp4 is connected to power supply Voltage;The drain electrode of mp5 is connected with the grid of mn3 and drain electrode, and the source class of mp5 is connected to supply voltage;The grid of mp6 and the grid of mp7 Extremely connected, the drain electrode of mp6 is connected with the grid of the grid of mn7 and drain electrode, mn6, and the source class of mp6 is connected to supply voltage;The source of mn1 Level is connected with the grid of mn2 and the grid of drain electrode, mn4;The source class of mn2 is connected to ground;The source class of mn3 and the drain electrode of mn4, mn5 Source class, the drain electrode of mn6 are connected;The source class of mn4 is connected to ground;The grid of mn5 is connected with the drain electrode of mp3, and the drain electrode of mn5 is connected to power supply Voltage;The source class of mn6, mn7 is all connected to ground.
5. high-order temperature compensated band-gap reference circuit according to claim 2 is it is characterised in that described operational amplifier Including pmos manages: mp9, mp10, mp11, mp12, mp13, mp14, nmos manages: mn8, mn9, mn10, mn11, resistance r6;Its In, the grid of mp9 is connected with the drain electrode of one end of r6, mp10, and the drain electrode of mp9 is connected with the source class of mp10, and the source class of mp9 is connected to Supply voltage;The grid of mp10 is connected with the other end of r6, the grid of mn8 and drain electrode;The grid of mp11 and drain electrode are connected together, And the drain electrode of the grid with mp12, mn9 is connected, the source class of mp11 is connected to supply voltage;The source class of the drain electrode of mp12 and mp13, The source class of mp14 is connected, and the source class of mp12 is connected to supply voltage;The grid of mp13 as the in-phase input end of operational amplifier, The drain electrode of mp13 is connected with the grid of the grid of mn10 and drain electrode, mn11;The grid of mp14 is anti-phase defeated as operational amplifier Enter end, the drain electrode of mp14 is connected with the drain electrode of mn11;The source class of mn8, mn9, mn10, mn11 is all connected to ground.
6. high-order temperature compensated band-gap reference circuit according to claim 3 is it is characterised in that described operational amplifier Including pmos manages: mp15, mp16, mp17, mp18, mp19, mp20, nmos manages: mn12, mn13, mn14, mn15, resistance r7; Wherein, the grid of mp15 is connected with one end of r7, the drain electrode of mp16, and the drain electrode of mp15 is connected with the source class of mp16, the source of mp15 Level is connected to supply voltage;The grid of mp16 is connected with the other end of r7, the grid of mn12 and drain electrode;The grid of mp17 and drain electrode connect Together, and the grid with mp18, the drain electrode of mn13 are connected, the source class of mp17 is connected to supply voltage;The drain electrode of mp18 with The source class of mp19, the source class of mp20 are connected, and the source class of mp18 is connected to supply voltage;The grid of mp19 is same as operational amplifier Phase input, the drain electrode of mp19 is connected with the grid of the grid of mn14 and drain electrode, mn15;The grid of mp20 is as operational amplifier Inverting input, the drain electrode of mp20 is connected with the drain electrode of mn15;The source class of mn12, mn13, mn14, mn15 is all connected to ground.
7. high-order temperature compensated band-gap reference circuit according to claim 2 it is characterised in that described triode q1, The emitter area ratio of q2, q3 is 1:8:1.
8. high-order temperature compensated band-gap reference circuit according to claim 3 it is characterised in that described triode q4, The emitter area ratio ratio of q5 is 1:8, and described resistance r3 and r5 resistance are equal.
CN201410147047.0A 2014-04-14 2014-04-14 Band-gap reference circuit with high-order temperature compensation function Expired - Fee Related CN104977968B (en)

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CN113703511B (en) * 2021-08-30 2022-09-09 上海川土微电子有限公司 Band-gap reference voltage source with ultralow temperature drift
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