CN115877908A - Band gap voltage reference circuit and second-order nonlinear correction circuit and chip thereof - Google Patents
Band gap voltage reference circuit and second-order nonlinear correction circuit and chip thereof Download PDFInfo
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- CN115877908A CN115877908A CN202310189755.XA CN202310189755A CN115877908A CN 115877908 A CN115877908 A CN 115877908A CN 202310189755 A CN202310189755 A CN 202310189755A CN 115877908 A CN115877908 A CN 115877908A
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Abstract
A band gap voltage reference circuit and a second-order nonlinear correction circuit and a chip thereof are provided, wherein the second-order nonlinear correction circuit comprises a PNP transistor Q1 and a PNP transistor Q2 which form a common emitter differential pair, an NPN transistor Q3 and an NPN transistor Q4 which form an active load, an NPN transistor Q5 and an NPN transistor Q6 which form a level shift circuit, and an NPN transistor Q7 which is used as a load of the level shift circuit. The second-order nonlinear correction circuit can perform further second-order compensation on a first-order compensated band gap voltage reference circuit, reduce the temperature coefficient within the temperature range of-40 to 125 ℃ to 11 ppm/DEG C, and simultaneously reduce the Monte Carlo dispersity of output reference voltage, can meet the requirement of a high-performance system on voltage reference, is beneficial to improving the performance of the whole circuit, and has a simple structure and easy implementation.
Description
Technical Field
The present application relates to the field of integrated circuit technologies, and in particular, to a bandgap voltage reference circuit and a second-order nonlinear correction circuit and a chip thereof.
Background
In the field of integrated circuit design, a bandgap voltage reference circuit is a basic module in a digital-analog hybrid circuit. Its power supply ripple rejection capability, temperature characteristics and noise characteristics can affect the performance of the overall circuit. In industrial and automotive applications, bandgap voltage reference circuits with high power supply ripple rejection and high temperature stability are receiving increasing attention.
In the related art, in order to obtain a lower temperature coefficient of the beltGap reference voltage, normally to reference voltage V REF Taylor function development according to temperature: v REF =a+bT+cT 2 + \8230, 8230, and first-order compensation for bandgap voltage reference circuit. However, the bandgap reference voltage after the first-order compensation can only reduce the influence of the first-order coefficient b, and the temperature coefficient is still high, so that the requirement of a high-performance system on the voltage reference cannot be met.
Disclosure of Invention
In order to solve the defects in the prior art, the application aims to provide a bandgap voltage reference circuit, a second-order nonlinear correction circuit and a chip thereof, which can perform further second-order compensation on the bandgap voltage reference circuit with first-order compensation, reduce the temperature coefficient within the temperature range of-40 to 125 ℃ to 11 ppm/DEG C, reduce the Monte Carlo dispersity of output reference voltage, meet the requirements of a high-performance system on voltage reference, facilitate the improvement of the performance of the whole circuit, and have simple structure and easy implementation.
In order to achieve the above object, the present application provides a second-order nonlinear correction circuit of a bandgap voltage reference circuit, including:
a PNP transistor Q1 having a base connected to the first input terminal of the second-order nonlinear correction circuit, a collector connected to the collector of the NPN transistor Q3 and the base of the NPN transistor Q6, respectively, and an emitter connected to a power supply voltage;
a PNP transistor Q2 having a base connected to the second input terminal of the second-order nonlinear correction circuit, a collector connected to a collector of an NPN transistor Q4 and a base of an NPN transistor Q5, respectively, and an emitter connected to the power supply voltage;
an NPN transistor Q3, the base electrode of which is connected with the bias voltage input end, and the emitter electrode of which is grounded through a resistor R1;
an NPN transistor Q4 having a base connected to the bias voltage input terminal and an emitter grounded via a resistor R2;
an NPN transistor Q5 having a collector connected to the first output terminal of the second-order nonlinear correction circuit, and connected to the power supply voltage via a resistor R3, and having an emitter connected to an emitter of the NPN transistor Q6 and a collector of the NPN transistor Q7, respectively;
an NPN transistor Q6 having a collector connected to the second output terminal of the second-order nonlinear correction circuit and connected to the power supply voltage via a resistor R4;
and an NPN transistor Q7 having a base connected to the bias voltage input terminal and an emitter grounded via a resistor R5.
Further, the transfer function image of the second-order nonlinear correction circuit is a quadratic curve with an upward opening.
Further, the resistance values of the resistor R1 and the resistor R2 are both 5K omega; the resistance values of the resistor R3 and the resistor R4 are both 290 Komega; the resistance value of the resistor R5 is 2.5K omega.
In order to achieve the above object, the present application further provides a bandgap voltage reference circuit, which includes the second-order nonlinear correction circuit as described above.
Further, the bandgap voltage reference circuit further comprises:
the reverse-phase input end of the feedback amplifier A is connected with the first output end of the second-order nonlinear correction circuit, the in-phase input end of the feedback amplifier A is connected with the second output end of the second-order nonlinear correction circuit, and the output ends of the feedback amplifier A are respectively connected with the grid electrode of the field effect tube PM1 and the grid electrode of the field effect tube PM 2;
a source electrode of the field effect transistor PM1 is connected with a power supply voltage, and a drain electrode of the field effect transistor PM1 is respectively connected with a first input end of the second-order nonlinear correction circuit and an emitting electrode of the PNP transistor Q8 through a resistor R6;
a source electrode of the field effect transistor PM2 is connected with power supply voltage, a drain electrode of the field effect transistor PM2 is connected with a voltage output end of the band gap voltage reference circuit, and is connected with a second input end of the second-order nonlinear correction circuit through a resistor R7;
a PNP transistor Q8 whose base and collector are grounded;
and a PNP transistor Q9, wherein the base electrode and the collector electrode of the PNP transistor Q are grounded, and the emitter electrode of the PNP transistor Q9 is connected with the second input end of the second-order nonlinearity correction circuit through a resistor R8.
To achieve the above object, the present application provides a chip including the bandgap voltage reference circuit as described above.
According to the band gap voltage reference circuit, the second-order nonlinear correction circuit and the chip thereof, the band gap voltage reference circuit with the first-order compensation can be further compensated in a second-order mode, the temperature coefficient within the temperature range of minus 40 to 125 ℃ is reduced to 11 ppm/DEG C, meanwhile, the Monte Carlo dispersity of output reference voltage is reduced, the requirement of a high-performance system on voltage reference can be met, the whole circuit performance can be improved, and the band gap voltage reference circuit is simple in structure and easy to achieve.
Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application.
Drawings
The accompanying drawings are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the principles of the application and not limit the application. In the drawings:
FIG. 1 is a schematic diagram of a second-order non-linear correction circuit of a bandgap voltage reference circuit according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a primary compensated bandgap voltage reference circuit according to an embodiment of the present application;
FIG. 3 is a temperature profile of the circuit of FIG. 2;
FIG. 4 is a temperature characteristic of the circuit of FIG. 2 corrected by the circuit of FIG. 1;
FIG. 5 is a schematic diagram of a bandgap voltage reference circuit according to an embodiment of the present application;
fig. 6 is a block diagram of a chip structure according to an embodiment of the present application.
Detailed Description
Embodiments of the present application will be described in more detail below with reference to the accompanying drawings. While certain embodiments of the present application are shown in the drawings, it should be understood that the present application may be embodied in various forms and should not be construed as limited to the embodiments set forth herein, but rather these embodiments are provided for a more complete and thorough understanding of the present application. It should be understood that the drawings and embodiments of the present application are for illustration purposes only and are not intended to limit the scope of the present application.
It should be understood that the various steps recited in the method embodiments of the present application may be performed in a different order and/or in parallel. Moreover, method embodiments may include additional steps and/or omit performing the illustrated steps. The scope of the present application is not limited in this respect.
The term "include" and variations thereof as used herein are open-ended, i.e., "including but not limited to". The term "based on" is "based, at least in part, on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". Relevant definitions for other terms will be given in the following description.
It should be noted that the terms "first", "second", and the like in the present application are only used for distinguishing different devices, modules, units or data, and are not used for limiting the order or interdependence of the functions performed by these devices, modules, units or data.
It is noted that references to "a" or "an" modification in this application are intended to be illustrative rather than limiting, and those skilled in the art will appreciate that references to "one or more" are intended to be exemplary unless the context clearly indicates otherwise. "plurality" is to be understood as two or more.
Hereinafter, embodiments of the present application will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic structural diagram of a second-order nonlinear correction circuit according to an embodiment of the present application, where the second-order nonlinear correction circuit is used to perform second-order compensation on a first-order compensated bandgap voltage reference circuit by connecting in series an input terminal of a feedback amplifier of the bandgap voltage reference circuit. Referring to fig. 1, the second-order nonlinear correction circuit includes: PNP transistor Q1, PNP transistor Q2, NPN transistor Q3, NPN transistor Q4, NPN transistor Q5, NPN transistor Q6, and NPN transistor Q7.
The base electrode of the PNP transistor Q1 is connected with a first input end X of the second-order nonlinear correction circuit; the collector of PNP transistor Q1 is connected to the collector of NPN transistor Q3 and the base of NPN transistor Q6A pole; the emitter of the PNP transistor Q1 is connected to the supply voltage V DD 。
The base electrode of the PNP transistor Q2 is connected with the second input end Y of the second-order nonlinear correction circuit; the collector of the PNP transistor Q2 is respectively connected with the collector of the NPN transistor Q4 and the base of the NPN transistor Q5; the emitter of the PNP transistor Q2 is connected to the supply voltage V DD 。
The PNP transistor Q1 and the PNP transistor Q2 form a common-emitter differential pair.
The base electrode of the NPN transistor Q3 is connected with a BIAS voltage input end BIAS; the collector of the NPN transistor Q3 is respectively connected with the collector of the PNP transistor Q1 and the base of the NPN transistor Q6; the emitter of NPN transistor Q3 is grounded through resistor R1.
The base electrode of the NPN transistor Q4 is connected with a BIAS voltage input end BIAS; the collector of the NPN transistor Q4 is respectively connected with the collector of the PNP transistor Q2 and the base of the NPN transistor Q5; the emitter of NPN transistor Q4 is grounded through resistor R2.
The NPN transistor Q3 and the NPN transistor Q4 constitute an active load. In a specific example, the resistance values of the resistor R1 and the resistor R2 may be both 5K Ω.
The base electrode of the NPN transistor Q5 is connected with the collector electrode of the PNP transistor Q2 and the collector electrode of the NPN transistor Q4; the collector of NPN transistor Q5 is connected with the first output end XC of the second-order non-linear correction circuit and is connected with the power supply voltage V through a resistor R3 DD (ii) a The emitter of NPN transistor Q5 is connected to the emitter of NPN transistor Q6 and the collector of NPN transistor Q7, respectively.
The base of the NPN transistor Q6 is connected with the collector of the PNP transistor Q1 and the collector of the NPN transistor Q3; the collector of NPN transistor Q6 is connected with second output end YC of second-order non-linear correction circuit, and is connected with power supply voltage V by resistor R4 DD 。
The NPN transistor Q5 and the NPN transistor Q6 constitute a level shift circuit. In a specific example, the resistance values of the resistor R3 and the resistor R4 may be both 290K Ω.
The base electrode of the NPN transistor Q7 is connected with a BIAS voltage input end BIAS; the emitter of NPN transistor Q7 is grounded through resistor R5.
The NPN transistor Q7 serves as a load of the level shift circuit, and in a specific example, the resistance of the resistor R5 may be 2.5K Ω.
In the embodiment of the present application, the transfer function image of the second-order nonlinear correction circuit is a quadratic curve with an upward opening.
It should be noted that, the base current I is due to the triode B In the same case, the collector current I C Increases with increasing temperature; and is similar to the forward characteristic of a diode, V BE Decreases as the temperature increases. I is C And V BE The relationship between can be expressed as:
according to the EM model of a bipolar transistor, the collector current I of the bipolar transistor C And V EB 、V CB Can be expressed as:
wherein alpha is F For base transport factor, I F0 Is the saturation current of the diode in forward bias, I R0 Is the saturation current of the diode when reverse biased.
The non-linearity correction circuit in the above embodiment is connected in series to the input of the feedback amplifier, i.e., between the two arms of the bandgap reference circuit and the feedback amplifier. I.C. A PTAT Is a first order function of temperature, I VBE The main components of the taylor expansion of (a) are a constant term and a primary and a secondary term of temperature. The basic principle of the invention is to utilize the collector current I of a bipolar transistor C And base emitter voltage V BE In an exponential parabolic relationship, will PTAT And I VBE The voltage generated at the two ends of the resistor is added to the base electrodes of the PNP transistor Q1 and the PNP transistor Q2, and then the voltage signals obtained by sampling and carrying out exponential transformation on the collector electrodes of the PNP transistor Q1 and the PNP transistor Q2 are output to the input end of the feedback amplifier, so that the quadratic term of the reference voltage source is compensated.
The present application is further explained below with reference to specific examples.
Fig. 2 is a schematic structural diagram of the primary compensation bandgap voltage reference circuit according to the specific example, and referring to fig. 2, the primary compensation bandgap voltage reference circuit includes a feedback amplifier a, a field effect transistor PM1, a field effect transistor PM2, a PNP transistor Q8, a PNP transistor Q9, a resistor R6, a resistor R7, and a resistor R8.
In the bandgap voltage reference circuit, the ratio of the areas of the PNP transistor Q8 and the PNP transistor Q9 is 1 n, the resistances of the resistor R6 and the resistor R7 are equal, and the voltages at the X and Y nodes are approximately equal due to the feedback of the feedback amplifier a, so that the voltages at the two ends of the resistor R6 and the resistor R7 are approximately equal. The FET PM1 is cascode with the FET PM2 so that the currents of the PNP transistor Q8 and the PNP transistor Q9 are also approximately equal, and thus, the emitter-base voltage V of the PNP transistor Q8 EB1 This can be derived from the following relation:
emitter-base voltage V of PNP transistor Q9 EB2 This can be derived from the following relation:
wherein Is the saturation current of the bipolar transistor; i is the current flowing through PNP transistors Q8 and Q9, and I can be derived from the following relationship:
wherein, V T Is a thermal voltage.
The output reference voltage V REF This can be derived from the following relation:
wherein, V T Has a positive temperature coefficient of about 0.087mV/K, V EB2 Has a negative temperature coefficient of about-1.5 mV/K. By determining R 7 /R 8 And the value of N, such that
A zero temperature coefficient at room temperature can be obtained. In this example, V at room temperature T =25mV，V EB2 =0.7V, reference voltage V of the once-compensated bandgap voltage reference circuit shown in fig. 2 REF About 1.13V. Through the first-order compensation, the temperature characteristic of the band gap reference voltage can reach 50 ppm/DEG C.
However, in many cases the circuit requires a bandgap reference voltage with a lower temperature coefficient, for which purpose the reference voltage V may be referenced REF Taylor function development according to temperature: v REF =a+bT+cT 2 + \8230and8230, on the premise that the influence of the first-order coefficient b is reduced through first-order compensation, second-order temperature compensation is further carried out on the reference voltage at a high-temperature end and a low-temperature end so as to reduce the influence of the second-order coefficient c, and therefore the temperature stability of the band gap reference voltage can be greatly improved.
FIG. 3 is a temperature characteristic curve of the bandgap voltage reference circuit in FIG. 2, and referring to FIG. 3, the temperature characteristic curve of the bandgap voltage reference circuit opens downward, and the reference voltage V is generated as the temperature extends from the temperature value corresponding to M point in FIG. 2 to the high and low temperature sides REF Is in a decreasing trend and is mainly characterized by quadratic terms.
Therefore, a quadratic curve having an opposite direction to the curve opening direction in fig. 3 can be generated by the second-order nonlinear correction circuit in the above embodiment to compensate for it, so as to obtain a second-order compensated temperature characteristic curve, as shown with reference to fig. 4. Therefore, the variation range of the band gap reference voltage in a wider temperature range is reduced, the temperature coefficient in the temperature range of minus 40 to 125 ℃ is reduced to 11 ppm/DEG C, and the reference voltage with high temperature stability is obtained, so that the band gap reference voltage can be applied to occasions needing high-precision voltage reference.
In summary, according to the second-order nonlinear correction circuit of the embodiment of the present application, the PNP transistor Q1 and the PNP transistor Q2 form a common emitter differential pair, the NPN transistor Q3 and the NPN transistor Q4 form an active load, the NPN transistor Q5 and the NPN transistor Q6 form a level shift circuit, and the NPN transistor Q7 serves as a load of the level shift circuit, so as to form the second-order nonlinear correction circuit, which can perform further second-order compensation on the first-order compensated bandgap voltage reference circuit, reduce the temperature coefficient in the temperature range of-40 to 125 ℃ to 11ppm/° c, and reduce the monte carlo dispersion of the output reference voltage, so as to meet the requirement of a high-performance system on the voltage reference, and is beneficial to improving the performance of the overall circuit, and has a simple structure and is easy to implement.
Fig. 5 is a schematic diagram of a bandgap voltage reference circuit according to an embodiment of the present application. Referring to fig. 5, the bandgap voltage reference circuit 100 includes the second-order nonlinearity correction circuit 10 in the above embodiment.
In the embodiment of the present application, the bandgap voltage reference circuit further includes: feedback amplifier A, field effect transistor PM1, field effect transistor PM2, PNP transistor Q8, PNP transistor Q9, resistance R6, resistance R7 and resistance R8.
The inverting input end of the feedback amplifier A is connected with a first output end XC of the second-order nonlinear correction circuit; the non-inverting input end of the feedback amplifier A is connected with the second output end YC of the second-order nonlinear correction circuit; the output end of the feedback amplifier A is respectively connected with the grid electrode of the field effect transistor PM1 and the grid electrode of the field effect transistor PM 2.
The source electrode of the field effect transistor PM1 and the source electrode of the field effect transistor PM2 are both connected with power supply voltage; the drain electrode of the field effect transistor PM1 is respectively connected with the first input end X of the second-order nonlinear correction circuit and the emitter electrode of the PNP transistor Q8 through a resistor R6.
And the drain electrode of the field effect transistor PM2 is connected with the voltage output end of the band gap voltage reference circuit and is connected with the second input end Y of the second-order nonlinear correction circuit through a resistor R7.
The base and collector of PNP transistor Q8 are grounded.
The base electrode and the collector electrode of the PNP transistor Q9 are grounded; the emitter of the PNP transistor Q9 is connected to the second input terminal of the second-order nonlinearity correction circuit via the resistor R8.
It should be noted that the explanation of the second-order nonlinear correction circuit in the above embodiment is also applicable to the bandgap voltage reference circuit in this embodiment, and details are not repeated here.
According to the band gap voltage reference circuit provided by the embodiment of the application, a common emitter differential pair is formed by the PNP transistor Q1 and the PNP transistor Q2, an active load is formed by the NPN transistor Q3 and the NPN transistor Q4, a level shift circuit is formed by the NPN transistor Q5 and the NPN transistor Q6, and the load of the level shift circuit is formed by the NPN transistor Q7, so that a second-order nonlinear correction circuit is formed, the band gap voltage reference circuit with first-order compensation can be further compensated in a second-order mode, the temperature coefficient in the temperature range of minus 40 to 125 ℃ is reduced to 11 ppm/DEG C, meanwhile, the Monte Carlo dispersity of output reference voltage is reduced, the requirement of a high-performance system on voltage reference can be met, the whole circuit performance can be improved, and the band gap voltage reference circuit is simple in structure and easy to realize.
Fig. 6 is a block diagram of a chip structure according to an embodiment of the present application. Referring to fig. 6, a chip 1000 includes the bandgap voltage reference circuit 100 in the above embodiment.
Those of ordinary skill in the art will understand that: although the present application has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention as defined in the appended claims. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (6)
1. A second order non-linear correction circuit for a bandgap voltage reference circuit, the second order non-linear correction circuit comprising:
a PNP transistor Q1 having a base connected to the first input terminal of the second-order nonlinear correction circuit, a collector connected to the collector of the NPN transistor Q3 and the base of the NPN transistor Q6, respectively, and an emitter connected to a power supply voltage;
a PNP transistor Q2 having a base connected to the second input terminal of the second-order nonlinear correction circuit, a collector connected to a collector of an NPN transistor Q4 and a base of an NPN transistor Q5, respectively, and an emitter connected to the power supply voltage;
an NPN transistor Q3, the base electrode of which is connected with the bias voltage input end, and the emitter electrode of which is grounded through a resistor R1;
an NPN transistor Q4, the base electrode of which is connected with the bias voltage input end, and the emitter electrode of which is grounded through a resistor R2;
an NPN transistor Q5 having a collector connected to the first output terminal of the second-order nonlinear correction circuit, and connected to the power supply voltage via a resistor R3, and having an emitter connected to an emitter of the NPN transistor Q6 and a collector of the NPN transistor Q7, respectively;
an NPN transistor Q6 having a collector connected to the second output terminal of the second-order nonlinear correction circuit and connected to the power supply voltage via a resistor R4;
and an NPN transistor Q7 having a base connected to the bias voltage input terminal and an emitter grounded via a resistor R5.
2. The second order nonlinear correction circuit according to claim 1, wherein a transfer function image of the second order nonlinear correction circuit is a quadratic curve with an opening upward.
3. The second-order nonlinear correction circuit of claim 1, wherein the resistance values of the resistor R1 and the resistor R2 are both 5K Ω; the resistance values of the resistor R3 and the resistor R4 are both 290 Komega; the resistance value of the resistor R5 is 2.5K omega.
4. A bandgap voltage reference circuit, comprising a second order non-linear correction circuit of the bandgap voltage reference circuit of claim 1.
5. The bandgap voltage reference circuit of claim 4, wherein the bandgap voltage reference circuit further comprises:
the reverse-phase input end of the feedback amplifier A is connected with the first output end of the second-order nonlinear correction circuit, the in-phase input end of the feedback amplifier A is connected with the second output end of the second-order nonlinear correction circuit, and the output ends of the feedback amplifier A are respectively connected with the grid electrode of the field effect tube PM1 and the grid electrode of the field effect tube PM 2;
a source electrode of the field effect transistor PM1 is connected with a power supply voltage, and a drain electrode of the field effect transistor PM1 is respectively connected with a first input end of the second-order nonlinear correction circuit and an emitting electrode of the PNP transistor Q8 through a resistor R6;
the source electrode of the field effect transistor PM2 is connected with power supply voltage, the drain electrode of the field effect transistor PM2 is connected with the voltage output end of the band gap voltage reference circuit, and is connected with the second input end of the second-order nonlinear correction circuit through a resistor R7;
a PNP transistor Q8 whose base and collector are grounded;
and a PNP transistor Q9, wherein the base electrode and the collector electrode of the PNP transistor Q are grounded, and the emitter electrode of the PNP transistor Q9 is connected with the second input end of the second-order nonlinearity correction circuit through a resistor R8.
6. A chip comprising the bandgap voltage reference circuit of claim 4.
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